KR102066546B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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KR102066546B1
KR102066546B1 KR1020160008548A KR20160008548A KR102066546B1 KR 102066546 B1 KR102066546 B1 KR 102066546B1 KR 1020160008548 A KR1020160008548 A KR 1020160008548A KR 20160008548 A KR20160008548 A KR 20160008548A KR 102066546 B1 KR102066546 B1 KR 102066546B1
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plasma
voltage
potential
high frequency
electrode
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KR20160133353A (ko
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마사키 이시구로
마사히로 스미야
시게루 시라요네
가즈유키 이케나가
도모유키 다무라
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H01L21/3065—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H01L21/02315—
    • H01L21/0234—
    • H01L21/32136—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020160008548A 2015-05-12 2016-01-25 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR102066546B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020170174968A KR102266687B1 (ko) 2015-05-12 2017-12-19 플라즈마 처리 장치 및 플라즈마 처리 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015096998A JP6518505B2 (ja) 2015-05-12 2015-05-12 プラズマ処理装置およびプラズマ処理方法
JPJP-P-2015-096998 2015-05-12

Related Child Applications (1)

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KR1020170174968A Division KR102266687B1 (ko) 2015-05-12 2017-12-19 플라즈마 처리 장치 및 플라즈마 처리 방법

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KR20160133353A KR20160133353A (ko) 2016-11-22
KR102066546B1 true KR102066546B1 (ko) 2020-01-15

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KR1020170174968A Active KR102266687B1 (ko) 2015-05-12 2017-12-19 플라즈마 처리 장치 및 플라즈마 처리 방법

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US (3) US9941133B2 (https=)
JP (1) JP6518505B2 (https=)
KR (2) KR102066546B1 (https=)
TW (1) TWI592981B (https=)

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KR20180041343A (ko) 2016-10-14 2018-04-24 주식회사 엘지화학 금속합금폼의 제조 방법
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10991591B2 (en) * 2018-01-29 2021-04-27 Ulvac, Inc. Reactive ion etching apparatus
JP7061922B2 (ja) * 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN111446144B (zh) * 2019-01-17 2024-04-19 东京毅力科创株式会社 静电吸附部的控制方法和等离子体处理装置
JP7346269B2 (ja) * 2019-01-17 2023-09-19 東京エレクトロン株式会社 静電吸着部の制御方法、及びプラズマ処理装置
JP2020177785A (ja) * 2019-04-17 2020-10-29 日本電産株式会社 プラズマ処理装置
CN117293008A (zh) * 2019-08-05 2023-12-26 株式会社日立高新技术 等离子处理装置
TWI796593B (zh) * 2019-09-06 2023-03-21 美商應用材料股份有限公司 用於不同基板的共同靜電吸盤
US11996278B2 (en) * 2020-03-31 2024-05-28 Atonarp Inc. Plasma generating device
KR20250030431A (ko) 2023-08-23 2025-03-05 주식회사 히타치하이테크 플라스마 처리 장치, 및 플라스마 처리 방법

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JP5596082B2 (ja) * 2012-06-18 2014-09-24 東京エレクトロン株式会社 基板吸着離脱方法及び基板処理方法
JP2015072825A (ja) * 2013-10-03 2015-04-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

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JPH06204177A (ja) * 1992-12-28 1994-07-22 Fujitsu Ltd プラズマ処理方法
JPH06349594A (ja) * 1993-06-07 1994-12-22 Mitsubishi Electric Corp プラズマ発生装置
JPH0722499A (ja) * 1993-06-18 1995-01-24 Kokusai Electric Co Ltd 半導体製造装置及び方法
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US20090109595A1 (en) * 2007-10-31 2009-04-30 Sokudo Co., Ltd. Method and system for performing electrostatic chuck clamping in track lithography tools
JP5596082B2 (ja) * 2012-06-18 2014-09-24 東京エレクトロン株式会社 基板吸着離脱方法及び基板処理方法
JP2015072825A (ja) * 2013-10-03 2015-04-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
US20160336185A1 (en) 2016-11-17
JP6518505B2 (ja) 2019-05-22
TWI592981B (zh) 2017-07-21
US9941133B2 (en) 2018-04-10
US11315792B2 (en) 2022-04-26
US20190333772A1 (en) 2019-10-31
TW201640558A (zh) 2016-11-16
KR20180001536A (ko) 2018-01-04
KR102266687B1 (ko) 2021-06-17
JP2016213358A (ja) 2016-12-15
US20180190502A1 (en) 2018-07-05
US10395935B2 (en) 2019-08-27
KR20160133353A (ko) 2016-11-22

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