JP6518505B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

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Publication number
JP6518505B2
JP6518505B2 JP2015096998A JP2015096998A JP6518505B2 JP 6518505 B2 JP6518505 B2 JP 6518505B2 JP 2015096998 A JP2015096998 A JP 2015096998A JP 2015096998 A JP2015096998 A JP 2015096998A JP 6518505 B2 JP6518505 B2 JP 6518505B2
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plasma
voltage
sample
power supply
electrode
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JP2015096998A
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Japanese (ja)
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JP2016213358A5 (https=
JP2016213358A (ja
Inventor
正貴 石黒
正貴 石黒
角屋　誠浩
誠浩 角屋
茂 白米
茂 白米
和幸 池永
和幸 池永
田村　智行
智行 田村
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2015096998A priority Critical patent/JP6518505B2/ja
Priority to KR1020160008548A priority patent/KR102066546B1/ko
Priority to TW105104757A priority patent/TWI592981B/zh
Priority to US15/057,162 priority patent/US9941133B2/en
Publication of JP2016213358A publication Critical patent/JP2016213358A/ja
Priority to KR1020170174968A priority patent/KR102266687B1/ko
Publication of JP2016213358A5 publication Critical patent/JP2016213358A5/ja
Priority to US15/904,856 priority patent/US10395935B2/en
Application granted granted Critical
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Priority to US16/506,095 priority patent/US11315792B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2015096998A 2015-05-12 2015-05-12 プラズマ処理装置およびプラズマ処理方法 Active JP6518505B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015096998A JP6518505B2 (ja) 2015-05-12 2015-05-12 プラズマ処理装置およびプラズマ処理方法
KR1020160008548A KR102066546B1 (ko) 2015-05-12 2016-01-25 플라즈마 처리 장치 및 플라즈마 처리 방법
TW105104757A TWI592981B (zh) 2015-05-12 2016-02-18 電漿處理裝置及電漿處理方法
US15/057,162 US9941133B2 (en) 2015-05-12 2016-03-01 Plasma processing apparatus and plasma processing method
KR1020170174968A KR102266687B1 (ko) 2015-05-12 2017-12-19 플라즈마 처리 장치 및 플라즈마 처리 방법
US15/904,856 US10395935B2 (en) 2015-05-12 2018-02-26 Plasma processing apparatus and plasma processing method
US16/506,095 US11315792B2 (en) 2015-05-12 2019-07-09 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015096998A JP6518505B2 (ja) 2015-05-12 2015-05-12 プラズマ処理装置およびプラズマ処理方法

Related Child Applications (1)

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JP2018197538A Division JP6648236B2 (ja) 2018-10-19 2018-10-19 プラズマ処理装置およびプラズマ処理方法

Publications (3)

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JP2016213358A JP2016213358A (ja) 2016-12-15
JP2016213358A5 JP2016213358A5 (https=) 2018-01-18
JP6518505B2 true JP6518505B2 (ja) 2019-05-22

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US (3) US9941133B2 (https=)
JP (1) JP6518505B2 (https=)
KR (2) KR102066546B1 (https=)
TW (1) TWI592981B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180041343A (ko) 2016-10-14 2018-04-24 주식회사 엘지화학 금속합금폼의 제조 방법
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10991591B2 (en) * 2018-01-29 2021-04-27 Ulvac, Inc. Reactive ion etching apparatus
JP7061922B2 (ja) * 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN111446144B (zh) * 2019-01-17 2024-04-19 东京毅力科创株式会社 静电吸附部的控制方法和等离子体处理装置
JP7346269B2 (ja) * 2019-01-17 2023-09-19 東京エレクトロン株式会社 静電吸着部の制御方法、及びプラズマ処理装置
JP2020177785A (ja) * 2019-04-17 2020-10-29 日本電産株式会社 プラズマ処理装置
CN117293008A (zh) * 2019-08-05 2023-12-26 株式会社日立高新技术 等离子处理装置
TWI796593B (zh) * 2019-09-06 2023-03-21 美商應用材料股份有限公司 用於不同基板的共同靜電吸盤
US11996278B2 (en) * 2020-03-31 2024-05-28 Atonarp Inc. Plasma generating device
KR20250030431A (ko) 2023-08-23 2025-03-05 주식회사 히타치하이테크 플라스마 처리 장치, 및 플라스마 처리 방법

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JPH06204177A (ja) * 1992-12-28 1994-07-22 Fujitsu Ltd プラズマ処理方法
JPH06349594A (ja) * 1993-06-07 1994-12-22 Mitsubishi Electric Corp プラズマ発生装置
JPH0722499A (ja) * 1993-06-18 1995-01-24 Kokusai Electric Co Ltd 半導体製造装置及び方法
US5894400A (en) * 1997-05-29 1999-04-13 Wj Semiconductor Equipment Group, Inc. Method and apparatus for clamping a substrate
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Also Published As

Publication number Publication date
US20160336185A1 (en) 2016-11-17
TWI592981B (zh) 2017-07-21
US9941133B2 (en) 2018-04-10
US11315792B2 (en) 2022-04-26
US20190333772A1 (en) 2019-10-31
KR102066546B1 (ko) 2020-01-15
TW201640558A (zh) 2016-11-16
KR20180001536A (ko) 2018-01-04
KR102266687B1 (ko) 2021-06-17
JP2016213358A (ja) 2016-12-15
US20180190502A1 (en) 2018-07-05
US10395935B2 (en) 2019-08-27
KR20160133353A (ko) 2016-11-22

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