TWI592981B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法 Download PDF

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Publication number
TWI592981B
TWI592981B TW105104757A TW105104757A TWI592981B TW I592981 B TWI592981 B TW I592981B TW 105104757 A TW105104757 A TW 105104757A TW 105104757 A TW105104757 A TW 105104757A TW I592981 B TWI592981 B TW I592981B
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TW
Taiwan
Prior art keywords
plasma
voltage
electrode
wafer
potential
Prior art date
Application number
TW105104757A
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English (en)
Chinese (zh)
Other versions
TW201640558A (zh
Inventor
石黒正貴
角屋誠浩
白米茂
池永和幸
田村智行
Original Assignee
日立全球先端科技股份有限公司
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Publication of TW201640558A publication Critical patent/TW201640558A/zh
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Publication of TWI592981B publication Critical patent/TWI592981B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW105104757A 2015-05-12 2016-02-18 電漿處理裝置及電漿處理方法 TWI592981B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015096998A JP6518505B2 (ja) 2015-05-12 2015-05-12 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201640558A TW201640558A (zh) 2016-11-16
TWI592981B true TWI592981B (zh) 2017-07-21

Family

ID=57276154

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105104757A TWI592981B (zh) 2015-05-12 2016-02-18 電漿處理裝置及電漿處理方法

Country Status (4)

Country Link
US (3) US9941133B2 (https=)
JP (1) JP6518505B2 (https=)
KR (2) KR102066546B1 (https=)
TW (1) TWI592981B (https=)

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* Cited by examiner, † Cited by third party
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KR20180041343A (ko) 2016-10-14 2018-04-24 주식회사 엘지화학 금속합금폼의 제조 방법
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10991591B2 (en) * 2018-01-29 2021-04-27 Ulvac, Inc. Reactive ion etching apparatus
JP7061922B2 (ja) * 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN111446144B (zh) * 2019-01-17 2024-04-19 东京毅力科创株式会社 静电吸附部的控制方法和等离子体处理装置
JP7346269B2 (ja) * 2019-01-17 2023-09-19 東京エレクトロン株式会社 静電吸着部の制御方法、及びプラズマ処理装置
JP2020177785A (ja) * 2019-04-17 2020-10-29 日本電産株式会社 プラズマ処理装置
CN117293008A (zh) * 2019-08-05 2023-12-26 株式会社日立高新技术 等离子处理装置
TWI796593B (zh) * 2019-09-06 2023-03-21 美商應用材料股份有限公司 用於不同基板的共同靜電吸盤
US11996278B2 (en) * 2020-03-31 2024-05-28 Atonarp Inc. Plasma generating device
KR20250030431A (ko) 2023-08-23 2025-03-05 주식회사 히타치하이테크 플라스마 처리 장치, 및 플라스마 처리 방법

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JPH06204177A (ja) * 1992-12-28 1994-07-22 Fujitsu Ltd プラズマ処理方法
JPH06349594A (ja) * 1993-06-07 1994-12-22 Mitsubishi Electric Corp プラズマ発生装置
JPH0722499A (ja) * 1993-06-18 1995-01-24 Kokusai Electric Co Ltd 半導体製造装置及び方法
US5894400A (en) * 1997-05-29 1999-04-13 Wj Semiconductor Equipment Group, Inc. Method and apparatus for clamping a substrate
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JP2002100573A (ja) * 2000-09-25 2002-04-05 Nec Corp 半導体製造装置および半導体製造方法
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JP2007115765A (ja) * 2005-10-18 2007-05-10 Hitachi High-Technologies Corp プラズマ処理装置
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JP4847909B2 (ja) * 2007-03-29 2011-12-28 東京エレクトロン株式会社 プラズマ処理方法及び装置
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JP4126084B1 (ja) * 2007-07-23 2008-07-30 信越エンジニアリング株式会社 静電チャックの表面電位制御方法
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JP2010040822A (ja) 2008-08-06 2010-02-18 Tokyo Electron Ltd 静電吸着装置の除電処理方法、基板処理装置、及び記憶媒体
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Also Published As

Publication number Publication date
US20160336185A1 (en) 2016-11-17
JP6518505B2 (ja) 2019-05-22
US9941133B2 (en) 2018-04-10
US11315792B2 (en) 2022-04-26
US20190333772A1 (en) 2019-10-31
KR102066546B1 (ko) 2020-01-15
TW201640558A (zh) 2016-11-16
KR20180001536A (ko) 2018-01-04
KR102266687B1 (ko) 2021-06-17
JP2016213358A (ja) 2016-12-15
US20180190502A1 (en) 2018-07-05
US10395935B2 (en) 2019-08-27
KR20160133353A (ko) 2016-11-22

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