KR102047505B1 - 노광 장치, 노광 방법 및 디바이스 제조 방법 - Google Patents

노광 장치, 노광 방법 및 디바이스 제조 방법 Download PDF

Info

Publication number
KR102047505B1
KR102047505B1 KR1020187034369A KR20187034369A KR102047505B1 KR 102047505 B1 KR102047505 B1 KR 102047505B1 KR 1020187034369 A KR1020187034369 A KR 1020187034369A KR 20187034369 A KR20187034369 A KR 20187034369A KR 102047505 B1 KR102047505 B1 KR 102047505B1
Authority
KR
South Korea
Prior art keywords
detection
substrate
detection unit
stage
exposure
Prior art date
Application number
KR1020187034369A
Other languages
English (en)
Korean (ko)
Other versions
KR20180129989A (ko
Inventor
마사키 가토
가이 나라
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20180129989A publication Critical patent/KR20180129989A/ko
Application granted granted Critical
Publication of KR102047505B1 publication Critical patent/KR102047505B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/703—Gap setting, e.g. in proximity printer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020187034369A 2009-08-26 2010-08-25 노광 장치, 노광 방법 및 디바이스 제조 방법 KR102047505B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2009-195686 2009-08-26
JP2009195686 2009-08-26
PCT/JP2010/064405 WO2011024866A1 (ja) 2009-08-26 2010-08-25 露光装置、露光方法及びデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177022420A Division KR101925114B1 (ko) 2009-08-26 2010-08-25 노광 장치, 노광 방법 및 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20180129989A KR20180129989A (ko) 2018-12-05
KR102047505B1 true KR102047505B1 (ko) 2019-12-02

Family

ID=43627966

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020187034369A KR102047505B1 (ko) 2009-08-26 2010-08-25 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020177022420A KR101925114B1 (ko) 2009-08-26 2010-08-25 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020117028627A KR101769091B1 (ko) 2009-08-26 2010-08-25 노광 장치, 노광 방법 및 디바이스 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020177022420A KR101925114B1 (ko) 2009-08-26 2010-08-25 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020117028627A KR101769091B1 (ko) 2009-08-26 2010-08-25 노광 장치, 노광 방법 및 디바이스 제조 방법

Country Status (5)

Country Link
JP (1) JP5692076B2 (zh)
KR (3) KR102047505B1 (zh)
CN (1) CN102472987A (zh)
TW (1) TW201118509A (zh)
WO (1) WO2011024866A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101737680B1 (ko) * 2011-12-20 2017-05-18 가부시키가이샤 니콘 기판 처리 장치, 디바이스 제조 시스템 및 디바이스 제조 방법
CN105527795B (zh) * 2014-09-28 2018-09-18 上海微电子装备（集团）股份有限公司 曝光装置及离焦倾斜误差补偿方法
CN105549327B (zh) * 2014-10-29 2018-03-02 上海微电子装备（集团）股份有限公司 曝光装置的调整装置及调整方法
EP3264877B1 (en) * 2015-02-26 2021-08-04 FUJI Corporation Component supply device and mounting device
CN107302665B (zh) * 2017-08-18 2020-07-24 联想(北京)有限公司 一种摄像装置、光圈调节方法和电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280299A (ja) * 2001-01-15 2002-09-27 Asml Netherlands Bv リソグラフィ装置
JP2003347185A (ja) * 2002-05-22 2003-12-05 Nikon Corp 露光方法及び露光装置、デバイス製造方法
JP2006195353A (ja) * 2005-01-17 2006-07-27 Nikon Corp 露光装置及び表示デバイスの製造方法
JP2009014919A (ja) 2007-07-03 2009-01-22 Dainippon Screen Mfg Co Ltd ずれ量検出装置および描画装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164032A (ja) * 1987-12-21 1989-06-28 Olympus Optical Co Ltd 半導体露光装置のアライメント装置
JPH02215118A (ja) * 1989-02-16 1990-08-28 Nec Corp 露光装置
JPH05206002A (ja) * 1992-01-30 1993-08-13 Matsushita Electron Corp アライメント方法と縮小投影露光装置
JP4048385B2 (ja) * 1996-08-19 2008-02-20 株式会社ニコン 光学式プリアライメント装置および該プリアライメント装置を備えた露光装置
JP2000246880A (ja) * 1999-02-25 2000-09-12 Canon Inc 印刷版の基準マーク及びこれを用いるアライメント方法
EP1223469A1 (en) * 2001-01-15 2002-07-17 ASML Netherlands B.V. Lithographic apparatus
US6525805B2 (en) * 2001-05-14 2003-02-25 Ultratech Stepper, Inc. Backside alignment system and method
JP3959283B2 (ja) * 2002-02-19 2007-08-15 株式会社日立ハイテクノロジーズ 露光装置及び露光方法
TWI278722B (en) * 2002-05-22 2007-04-11 Nikon Corp Exposing method, exposing device and manufacturing method for device
JP2005109305A (ja) * 2003-10-01 2005-04-21 Canon Inc 露光装置、露光方法、位置合わせ方法及びデバイスの製造方法
JP2006139087A (ja) * 2004-11-12 2006-06-01 Pentax Industrial Instruments Co Ltd 描画装置の基板位置ずれ検出機構
JP4845757B2 (ja) * 2007-02-02 2011-12-28 富士フイルム株式会社 描画装置及び方法
JP4866782B2 (ja) * 2007-04-27 2012-02-01 富士フイルム株式会社 基板クランプ機構及び描画システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280299A (ja) * 2001-01-15 2002-09-27 Asml Netherlands Bv リソグラフィ装置
JP2004320056A (ja) * 2001-01-15 2004-11-11 Asml Netherlands Bv リソグラフィ装置
JP2003347185A (ja) * 2002-05-22 2003-12-05 Nikon Corp 露光方法及び露光装置、デバイス製造方法
JP2006195353A (ja) * 2005-01-17 2006-07-27 Nikon Corp 露光装置及び表示デバイスの製造方法
JP2009014919A (ja) 2007-07-03 2009-01-22 Dainippon Screen Mfg Co Ltd ずれ量検出装置および描画装置

Also Published As

Publication number Publication date
KR20180129989A (ko) 2018-12-05
CN102472987A (zh) 2012-05-23
JP5692076B2 (ja) 2015-04-01
WO2011024866A1 (ja) 2011-03-03
TW201118509A (en) 2011-06-01
KR20170096216A (ko) 2017-08-23
KR20120047849A (ko) 2012-05-14
JPWO2011024866A1 (ja) 2013-01-31
KR101925114B1 (ko) 2018-12-05
KR101769091B1 (ko) 2017-08-30

Similar Documents

Publication Publication Date Title
JP6525045B2 (ja) 照明光学装置、露光装置及びデバイスの製造方法
CN107407894B (zh) 测量装置及测量方法、曝光装置及曝光方法、以及器件制造方法
JPWO2009078434A1 (ja) 露光装置、露光方法、及びデバイス製造方法
KR102556125B1 (ko) 레이아웃 방법, 마크 검출 방법, 노광 방법, 계측 장치, 노광 장치, 그리고 디바이스 제조 방법
KR102047505B1 (ko) 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2012242811A (ja) マスク、露光装置、露光方法、及びデバイス製造方法
JP2010118383A (ja) 照明装置、露光装置、及びデバイス製造方法
WO2023127499A1 (ja) 露光装置
JP6051905B2 (ja) 光分配装置、照明システム及びこれを備える露光装置
KR20240014514A (ko) 노광 장치 및 디바이스 제조 방법
JP2010050223A (ja) 基板処理方法、露光装置、及びデバイス製造方法
JP2014134591A (ja) 照明装置、露光装置、照明方法及びデバイス製造方法
JP5470984B2 (ja) 照明装置、露光装置、及びデバイス製造方法
JP4957281B2 (ja) 露光装置、露光方法及びデバイス製造方法
JP2012146702A (ja) 露光方法及び露光装置
JP2012146701A (ja) 露光方法及び露光装置
JP2014236211A (ja) 照明装置、露光装置、照明方法及びデバイス製造方法
JP2012093585A (ja) アライメント方法、露光方法、及びデバイス製造方法
JP2013021264A (ja) 照明装置、照明方法、露光装置、および電子デバイスの製造方法
JP2012137669A (ja) 露光装置及び露光方法
JP2011114207A (ja) 投影装置、露光装置、露光方法、及びデバイス製造方法
JP2013201372A (ja) 露光装置、露光方法及びデバイス製造方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right