KR101989653B1 - 진공 증착 장치 - Google Patents

진공 증착 장치 Download PDF

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Publication number
KR101989653B1
KR101989653B1 KR1020150174861A KR20150174861A KR101989653B1 KR 101989653 B1 KR101989653 B1 KR 101989653B1 KR 1020150174861 A KR1020150174861 A KR 1020150174861A KR 20150174861 A KR20150174861 A KR 20150174861A KR 101989653 B1 KR101989653 B1 KR 101989653B1
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South Korea
Prior art keywords
evaporation
evaporation source
opening end
source
longitudinal direction
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Korean (ko)
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KR20160079653A (ko
Inventor
요시나리 곤도
히로유키 다무라
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캐논 톡키 가부시키가이샤
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    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020150174861A 2014-12-26 2015-12-09 진공 증착 장치 Active KR101989653B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014265981A JP6529257B2 (ja) 2014-12-26 2014-12-26 真空蒸着装置
JPJP-P-2014-265981 2014-12-26

Publications (2)

Publication Number Publication Date
KR20160079653A KR20160079653A (ko) 2016-07-06
KR101989653B1 true KR101989653B1 (ko) 2019-06-14

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ID=56295966

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150174861A Active KR101989653B1 (ko) 2014-12-26 2015-12-09 진공 증착 장치

Country Status (4)

Country Link
JP (1) JP6529257B2 (cg-RX-API-DMAC10.html)
KR (1) KR101989653B1 (cg-RX-API-DMAC10.html)
CN (1) CN105734495B (cg-RX-API-DMAC10.html)
TW (1) TWI673379B (cg-RX-API-DMAC10.html)

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* Cited by examiner, † Cited by third party
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WO2018025637A1 (ja) * 2016-08-02 2018-02-08 株式会社アルバック 真空蒸着装置
TWI580807B (zh) * 2016-10-28 2017-05-01 財團法人工業技術研究院 蒸鍍設備與利用此設備之蒸鍍方法
KR102716685B1 (ko) * 2016-12-09 2024-10-14 주식회사 선익시스템 증발원용 도가니
US20200087777A1 (en) * 2017-09-28 2020-03-19 Sharp Kabushiki Kaisha Vapor deposition source and vapor deposition apparatus, and method for manufacturing vapor deposition film
WO2019064452A1 (ja) * 2017-09-28 2019-04-04 シャープ株式会社 蒸着粒子射出装置および蒸着装置並びに蒸着膜製造方法
CN108570645B (zh) * 2017-11-30 2023-09-29 上海微电子装备（集团）股份有限公司 真空蒸镀装置及其蒸发头、真空蒸镀方法
JP6931599B2 (ja) * 2017-12-06 2021-09-08 長州産業株式会社 蒸着装置及び蒸着方法
JP6941547B2 (ja) * 2017-12-06 2021-09-29 長州産業株式会社 蒸着装置、蒸着方法及び制御板
JP6983096B2 (ja) * 2018-03-30 2021-12-17 株式会社アルバック 真空蒸着装置用の蒸着源
CN111206205A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 沉积腔室、镀膜设备及镀膜方法
CN111206207A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 沉积腔室、镀膜设备及镀膜方法
CN111206219A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 沉积腔室、镀膜设备及镀膜方法
CN111206224A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 沉积腔室、镀膜设备及镀膜方法
CN111206221A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 一种镀膜设备及镀膜方法
CN111206220A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 一种镀膜设备及镀膜方法
CN111206203A (zh) * 2018-11-02 2020-05-29 北京铂阳顶荣光伏科技有限公司 沉积腔室、镀膜设备及镀膜方法
CN109666898A (zh) * 2019-01-03 2019-04-23 福建华佳彩有限公司 一种用于点蒸发源的坩埚
JP7217635B2 (ja) * 2019-01-11 2023-02-03 株式会社アルバック 蒸着源、成膜装置、及び蒸着方法
WO2020213228A1 (ja) * 2019-04-19 2020-10-22 株式会社アルバック 蒸着源及び蒸着装置
CN110791731B (zh) * 2019-11-20 2022-05-06 信利(仁寿)高端显示科技有限公司 一种蒸发源组件
CN113403585A (zh) * 2020-03-16 2021-09-17 上海升翕光电科技有限公司 蒸镀装置
CN114574810A (zh) * 2020-11-30 2022-06-03 上海升翕光电科技有限公司 蒸镀盖板及蒸镀装置
CN114657505A (zh) * 2020-12-24 2022-06-24 上海升翕光电科技有限公司 蒸发源
CN114657504A (zh) * 2020-12-24 2022-06-24 上海升翕光电科技有限公司 蒸发源
CN114318237A (zh) * 2021-12-29 2022-04-12 武汉华星光电半导体显示技术有限公司 一种蒸镀装置
CN120513315A (zh) * 2023-01-17 2025-08-19 应用材料公司 材料沉积组件、真空沉积系统和制造器件的方法
CN116180018A (zh) * 2023-02-14 2023-05-30 上海升翕光电科技有限公司 一种共蒸方法及共蒸设备
WO2025168964A1 (en) * 2024-02-05 2025-08-14 Applied Materials, Inc. Method of coating a substrate, evaporation source arrangement, and substrate for display manufacture
WO2025215395A1 (en) * 2024-04-09 2025-10-16 Applied Materials, Inc. Material deposition assembly and method of depositing materials on a substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011017059A (ja) * 2009-07-10 2011-01-27 Mitsubishi Heavy Ind Ltd 真空蒸着装置
US20120141674A1 (en) * 2010-12-03 2012-06-07 Il-Soo Park Evaporator and method for depositing organic material
JP2014077193A (ja) * 2012-10-09 2014-05-01 Samsung Display Co Ltd 蒸着装置およびこれを用いた有機発光表示装置の製造方法
JP2014201833A (ja) * 2013-04-01 2014-10-27 上海和輝光電有限公司Ｅｖｅｒｄｉｓｐｌａｙ Ｏｐｔｒｏｎｉｃｓ （Ｓｈａｎｇｈａｉ） Ｌｉｍｉｔｅｄ 蒸発源アセンブリ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100623730B1 (ko) * 2005-03-07 2006-09-14 삼성에스디아이 주식회사 증발원 어셈블리 및 이를 구비한 증착 장치
CN104099570B (zh) * 2013-04-01 2016-10-05 上海和辉光电有限公司 单点线性蒸发源系统

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011017059A (ja) * 2009-07-10 2011-01-27 Mitsubishi Heavy Ind Ltd 真空蒸着装置
US20120141674A1 (en) * 2010-12-03 2012-06-07 Il-Soo Park Evaporator and method for depositing organic material
JP2014077193A (ja) * 2012-10-09 2014-05-01 Samsung Display Co Ltd 蒸着装置およびこれを用いた有機発光表示装置の製造方法
JP2014201833A (ja) * 2013-04-01 2014-10-27 上海和輝光電有限公司Ｅｖｅｒｄｉｓｐｌａｙ Ｏｐｔｒｏｎｉｃｓ （Ｓｈａｎｇｈａｉ） Ｌｉｍｉｔｅｄ 蒸発源アセンブリ

Also Published As

Publication number Publication date
KR20160079653A (ko) 2016-07-06
TWI673379B (zh) 2019-10-01
CN105734495A (zh) 2016-07-06
JP2016125091A (ja) 2016-07-11
CN105734495B (zh) 2019-12-06
JP6529257B2 (ja) 2019-06-12
TW201627515A (zh) 2016-08-01

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