KR101988127B1 - 기판 처리 장치 - Google Patents

기판 처리 장치 Download PDF

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Publication number
KR101988127B1
KR101988127B1 KR1020170125882A KR20170125882A KR101988127B1 KR 101988127 B1 KR101988127 B1 KR 101988127B1 KR 1020170125882 A KR1020170125882 A KR 1020170125882A KR 20170125882 A KR20170125882 A KR 20170125882A KR 101988127 B1 KR101988127 B1 KR 101988127B1
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South Korea
Prior art keywords
substrate
optical member
heating
light
liquid
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KR1020170125882A
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English (en)
Korean (ko)
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KR20180036585A (ko
Inventor
유지 나가시마
고노스케 하야시
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시바우라 메카트로닉스 가부시끼가이샤
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    • H01L21/67098
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0422Apparatus for fluid treatment for etching for wet etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02Cleaning by the force of jets, e.g. blowing-out cavities
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00Drying solid materials or objects by processes involving the application of heat
    • F26B3/28Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
    • F26B3/30Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
    • H01L21/67028
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/10Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microbiology (AREA)
  • Mechanical Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020170125882A 2016-09-30 2017-09-28 기판 처리 장치 Active KR101988127B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016194722A JP6849368B2 (ja) 2016-09-30 2016-09-30 基板処理装置
JPJP-P-2016-194722 2016-09-30

Publications (2)

Publication Number Publication Date
KR20180036585A KR20180036585A (ko) 2018-04-09
KR101988127B1 true KR101988127B1 (ko) 2019-06-11

Family

ID=59997167

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170125882A Active KR101988127B1 (ko) 2016-09-30 2017-09-28 기판 처리 장치

Country Status (6)

Country Link
US (1) US10460961B2 (https=)
EP (1) EP3301707A1 (https=)
JP (1) JP6849368B2 (https=)
KR (1) KR101988127B1 (https=)
CN (1) CN107887300B (https=)
TW (1) TWI677018B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6849368B2 (ja) * 2016-09-30 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置
JP2019054112A (ja) * 2017-09-15 2019-04-04 株式会社Screenホールディングス 基板乾燥方法および基板乾燥装置
KR102187631B1 (ko) 2018-03-29 2020-12-07 현대모비스 주식회사 차량의 제동 장치 및 제동 제어 방법
CN111250455A (zh) * 2018-11-30 2020-06-09 夏泰鑫半导体(青岛)有限公司 晶圆清洗装置
JP7625458B2 (ja) * 2021-03-22 2025-02-03 株式会社Screenホールディングス 基板処理装置および基板処理方法
KR102753522B1 (ko) * 2021-12-02 2025-01-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014794A (ja) * 2002-06-06 2004-01-15 Hitachi Kokusai Electric Inc 基板処理装置、及び半導体装置の製造方法
JP2004056070A (ja) * 2002-05-28 2004-02-19 Shibaura Mechatronics Corp スピン処理装置及びスピン処理方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4846926A (en) * 1985-08-26 1989-07-11 Ford Aerospace & Communications Corporation HcCdTe epitaxially grown on crystalline support
US4828369A (en) * 1986-05-28 1989-05-09 Minolta Camera Kabushiki Kaisha Electrochromic device
JPH0676970B2 (ja) * 1987-02-25 1994-09-28 東京エレクトロン東北株式会社 光学検査装置
JPH02237029A (ja) 1989-03-09 1990-09-19 Hitachi Ltd 乾燥装置
JPH02278720A (ja) * 1989-04-20 1990-11-15 Matsushita Electron Corp プラズマドーピング装置
JP3197557B2 (ja) * 1990-11-27 2001-08-13 株式会社半導体エネルギー研究所 被膜形成方法
US5242537A (en) * 1991-04-30 1993-09-07 The United States Of America As Represented By The Secretary Of The Navy Ion beam etching of metal oxide ceramics
JPH07326578A (ja) * 1994-06-01 1995-12-12 Nippon Steel Corp 薄膜製造装置
US6310328B1 (en) * 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
JP2004259734A (ja) * 2003-02-24 2004-09-16 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
DE10361075A1 (de) * 2003-12-22 2005-07-28 Pac Tech - Packaging Technologies Gmbh Verfahren und Vorichtung zur Trocknung von Schaltungssubstraten
US20060035477A1 (en) * 2004-08-12 2006-02-16 Karen Mai Methods and systems for rapid thermal processing
US7484315B2 (en) * 2004-11-29 2009-02-03 Tokyo Electron Limited Replaceable precursor tray for use in a multi-tray solid precursor delivery system
JP4179276B2 (ja) * 2004-12-24 2008-11-12 セイコーエプソン株式会社 溶媒除去装置および溶媒除去方法
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
CN101008074A (zh) * 2006-01-24 2007-08-01 鸿富锦精密工业(深圳)有限公司 加热装置及采用该加热装置的真空镀膜设备
US7654010B2 (en) * 2006-02-23 2010-02-02 Tokyo Electron Limited Substrate processing system, substrate processing method, and storage medium
JP4896555B2 (ja) * 2006-03-29 2012-03-14 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP5043406B2 (ja) * 2006-11-21 2012-10-10 大日本スクリーン製造株式会社 基板乾燥方法および基板乾燥装置
US7980000B2 (en) * 2006-12-29 2011-07-19 Applied Materials, Inc. Vapor dryer having hydrophilic end effector
US8677650B2 (en) * 2007-06-15 2014-03-25 Abbott Cardiovascular Systems Inc. Methods and devices for drying coated stents
FR2920046A1 (fr) * 2007-08-13 2009-02-20 Alcatel Lucent Sas Procede de post-traitement d'un support de transport pour le convoyage et le stockage atmospherique de substrats semi-conducteurs, et station de post-traitement pour la mise en oeuvre d'un tel procede
US20090111274A1 (en) * 2007-10-31 2009-04-30 Christoph Noelscher Methods of Manufacturing a Semiconductor Device and Apparatus and Etch Chamber for the Manufacturing of Semiconductor Devices
JP2009158564A (ja) * 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP5402657B2 (ja) * 2010-01-14 2014-01-29 株式会社Sumco エピタキシャル成長装置
US20120225568A1 (en) * 2011-03-03 2012-09-06 Tokyo Electron Limited Annealing method and annealing apparatus
JP5622675B2 (ja) * 2011-07-05 2014-11-12 株式会社東芝 基板処理方法及び基板処理装置
KR101368818B1 (ko) * 2012-05-03 2014-03-04 에이피시스템 주식회사 기판 처리 장치
CN104428879B (zh) * 2012-05-30 2018-01-30 应用材料公司 用于快速热处理的设备及方法
US8904668B2 (en) * 2012-10-11 2014-12-09 Eastman Kodak Company Applying heating liquid to remove moistening liquid
US8898928B2 (en) * 2012-10-11 2014-12-02 Lam Research Corporation Delamination drying apparatus and method
JP6455962B2 (ja) * 2013-03-18 2019-01-23 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6302700B2 (ja) * 2013-03-18 2018-03-28 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
KR102080722B1 (ko) * 2013-05-23 2020-02-24 엘지이노텍 주식회사 발광 모듈
JP6289961B2 (ja) * 2014-03-27 2018-03-07 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP2016025233A (ja) * 2014-07-22 2016-02-08 株式会社東芝 基板処理装置、及び基板処理方法
JP6356059B2 (ja) * 2014-12-26 2018-07-11 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
KR101860631B1 (ko) * 2015-04-30 2018-05-23 시바우라 메카트로닉스 가부시끼가이샤 기판 처리 장치 및 기판 처리 방법
JP6824164B2 (ja) * 2015-06-29 2021-02-03 芝浦メカトロニクス株式会社 錠剤印刷装置及び錠剤印刷方法
JP6849368B2 (ja) * 2016-09-30 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004056070A (ja) * 2002-05-28 2004-02-19 Shibaura Mechatronics Corp スピン処理装置及びスピン処理方法
JP2004014794A (ja) * 2002-06-06 2004-01-15 Hitachi Kokusai Electric Inc 基板処理装置、及び半導体装置の製造方法

Also Published As

Publication number Publication date
US10460961B2 (en) 2019-10-29
JP6849368B2 (ja) 2021-03-24
JP2018056529A (ja) 2018-04-05
KR20180036585A (ko) 2018-04-09
EP3301707A1 (en) 2018-04-04
CN107887300A (zh) 2018-04-06
CN107887300B (zh) 2021-09-14
TW201814779A (zh) 2018-04-16
TWI677018B (zh) 2019-11-11
US20180096864A1 (en) 2018-04-05

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