JP4896555B2 - 半導体製造装置及び半導体装置の製造方法 - Google Patents
半導体製造装置及び半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4896555B2 JP4896555B2 JP2006091812A JP2006091812A JP4896555B2 JP 4896555 B2 JP4896555 B2 JP 4896555B2 JP 2006091812 A JP2006091812 A JP 2006091812A JP 2006091812 A JP2006091812 A JP 2006091812A JP 4896555 B2 JP4896555 B2 JP 4896555B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processed
- light
- semiconductor
- lamps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 59
- 239000000758 substrate Substances 0.000 claims description 116
- 238000012545 processing Methods 0.000 claims description 36
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 33
- 239000012535 impurity Substances 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 238000000137 annealing Methods 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 238000005259 measurement Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- 230000004913 activation Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 238000002513 implantation Methods 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本発明の実施の形態に係る半導体製造装置は、図1に示すように、被処理基体1を配置する処理室30と、処理室30の上方に配置された複数のランプ35a,35b,35c,35d,35e,35f,35g,35h,35i,35jと、被処理基体1の方向に対して複数のランプ35a〜35jの後方に位置し、複数のランプ35a〜35jの光に対する反射率の面内分布を空間的に制御して、複数のランプ35a〜35jの光を被処理基体に照射する反射手段(反射板36)とを備える。
本発明の実施の形態に係る半導体装置の製造方法を、半導体装置の基本素子の1つである相補型MOS(CMOS)トランジスタの製造工程を例に、図11〜図20を参照しながら説明する。なお、半導体装置の基本素子は、CMOSトランジスタに限定されない。例えば、pMOSトランジスタやnMOSトランジスタ等であってもよい。また、酸化膜だけでなく、窒化膜、酸窒化膜等の金属・絶縁膜・半導体(MIS)トランジスタであってもよいことは勿論である。
次にフラッシュランプ処理を行なうが、ここで均一性調整を行なうため調整用基板を用意する。加工前のパターンのないシリコン単結晶基板に、図18に示す半導体基板1のpMOSあるいはnMOSのエクステンションあるいはソース・ドレインと同様のイオン注入を行なったウエハを複数枚用意する。
実施の形態の変形例に係る半導体製造装置は、図22に示すように、複数のランプ35a〜35jの光に対する反射率の面内分布を空間的に制御して、複数のランプ35a〜35jの光を被処理基体1に照射する反射手段として、処理室30の内壁に配置され、複数の開口部460a,460xを有する反射部材46と、開口部460a,460cのそれぞれに埋め込まれた複数の反射抑止部材38a,38xと、反射抑止部材38a,38xのそれぞれを覆う可動式の複数の遮光板37a,37xとを備える点が、図1に示す半導体製造装置と異なる。
30…処理室
31…加熱源
32…サセプタ
33…透明窓
34…ランプハウジング
35a〜35j…ランプ
36…反射板
37a,37b,37c,…遮光板
38a,38x…反射抑止部材
40…冷却水
46…反射部材
55…絶縁膜
Claims (1)
- 被処理基体を配置する処理室と、
前記処理室の上方に配置された複数のランプと、
前記被処理基体の方向に対して前記複数のランプの後方に位置し、前記複数のランプの光に対する反射率の面内分布を空間的に制御して、前記複数のランプの光を前記被処理基体に照射する反射手段とを備え、
前記反射手段が、
複数の開口部を有する反射板と、
前記開口部のそれぞれを覆う可動式の複数の遮光板
とを備えることを特徴とする半導体製造装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006091812A JP4896555B2 (ja) | 2006-03-29 | 2006-03-29 | 半導体製造装置及び半導体装置の製造方法 |
US11/727,519 US7643736B2 (en) | 2006-03-29 | 2007-03-27 | Apparatus and method for manufacturing semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006091812A JP4896555B2 (ja) | 2006-03-29 | 2006-03-29 | 半導体製造装置及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007266471A JP2007266471A (ja) | 2007-10-11 |
JP4896555B2 true JP4896555B2 (ja) | 2012-03-14 |
Family
ID=38559741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006091812A Expired - Fee Related JP4896555B2 (ja) | 2006-03-29 | 2006-03-29 | 半導体製造装置及び半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7643736B2 (ja) |
JP (1) | JP4896555B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009164525A (ja) * | 2008-01-10 | 2009-07-23 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP5318455B2 (ja) * | 2008-05-02 | 2013-10-16 | 大日本スクリーン製造株式会社 | 熱処理装置 |
US7964858B2 (en) * | 2008-10-21 | 2011-06-21 | Applied Materials, Inc. | Ultraviolet reflector with coolant gas holes and method |
US20100096569A1 (en) * | 2008-10-21 | 2010-04-22 | Applied Materials, Inc. | Ultraviolet-transmitting microwave reflector comprising a micromesh screen |
JP2010199419A (ja) * | 2009-02-26 | 2010-09-09 | Toshiba Corp | 半導体処理装置 |
US9337059B2 (en) | 2011-08-23 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and methods for annealing wafers |
JP6486743B2 (ja) * | 2015-03-25 | 2019-03-20 | 株式会社Screenホールディングス | 熱処理装置、および熱処理装置の調整方法 |
KR102416569B1 (ko) * | 2015-08-27 | 2022-07-04 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
JP6849368B2 (ja) * | 2016-09-30 | 2021-03-24 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS632318A (ja) * | 1986-06-23 | 1988-01-07 | Hitachi Ltd | ランプ加熱装置 |
JPH02285338A (ja) * | 1989-04-27 | 1990-11-22 | Asahi Optical Co Ltd | 照明装置 |
JPH06318558A (ja) * | 1991-02-26 | 1994-11-15 | Hitachi Vlsi Eng Corp | ランプアニール装置 |
JP2000505961A (ja) * | 1996-12-20 | 2000-05-16 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 急速熱処理用炉 |
JP2000216095A (ja) * | 1999-01-20 | 2000-08-04 | Tokyo Electron Ltd | 枚葉式熱処理装置 |
JP4409655B2 (ja) * | 1999-03-19 | 2010-02-03 | 東京エレクトロン株式会社 | 熱処理装置 |
JP2003077852A (ja) | 2001-09-03 | 2003-03-14 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
US6849831B2 (en) * | 2002-03-29 | 2005-02-01 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
US6885815B2 (en) * | 2002-07-17 | 2005-04-26 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus performing irradiating a substrate with light |
JP4419377B2 (ja) | 2002-09-30 | 2010-02-24 | ウシオ電機株式会社 | フラッシュランプ光照射装置 |
JP2004186495A (ja) * | 2002-12-04 | 2004-07-02 | Toshiba Corp | 半導体装置の製造装置、半導体装置の製造方法、および半導体装置 |
JP2005108967A (ja) * | 2003-09-29 | 2005-04-21 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP3910603B2 (ja) * | 2004-06-07 | 2007-04-25 | 株式会社東芝 | 熱処理装置、熱処理方法及び半導体装置の製造方法 |
-
2006
- 2006-03-29 JP JP2006091812A patent/JP4896555B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-27 US US11/727,519 patent/US7643736B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7643736B2 (en) | 2010-01-05 |
JP2007266471A (ja) | 2007-10-11 |
US20070232083A1 (en) | 2007-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4896555B2 (ja) | 半導体製造装置及び半導体装置の製造方法 | |
JP3910603B2 (ja) | 熱処理装置、熱処理方法及び半導体装置の製造方法 | |
US8211785B2 (en) | Fabrication method for semiconductor device including flash lamp annealing processes | |
US8558291B2 (en) | Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device | |
US20110034015A1 (en) | Heat treatment apparatus and method for manufacturing semiconductor device | |
US7501332B2 (en) | Doping method and manufacturing method for a semiconductor device | |
US8518838B2 (en) | Method of thermal processing structures formed on a substrate | |
US7759259B2 (en) | Method of manufacturing semiconductor device | |
US20060216875A1 (en) | Method for annealing and method for manufacturing a semiconductor device | |
JP2006351871A (ja) | 熱処理装置、熱処理方法および半導体装置の製造方法 | |
JP2004186495A (ja) | 半導体装置の製造装置、半導体装置の製造方法、および半導体装置 | |
US20020179589A1 (en) | Lamp annealing device and substrate for a display element | |
US20090137107A1 (en) | Method of manufacturing semiconductor device | |
JP2001319887A (ja) | ランプアニール装置および表示素子用基板 | |
JP2009081383A (ja) | 薄膜半導体素子を備えた表示装置及び薄膜半導体素子の製造方法 | |
JP2002246328A (ja) | 熱処理方法、熱処理装置及び半導体装置の製造方法 | |
US20100151696A1 (en) | Manufacturing method for semiconductor device and heat treatment apparatus | |
KR101323222B1 (ko) | 기판상에 형성되는 구조체의 열적 프로세싱을 위한 장치 및 방법 | |
JP2005322893A (ja) | 不純物添加方法及び半導体装置の製造方法 | |
US20070022623A1 (en) | Laser surface drying | |
US20150311079A1 (en) | Semiconductor integrated circuit manufacturing method | |
JP4481528B2 (ja) | 半導体製造装置及び半導体装置の製造方法 | |
JP2005136382A (ja) | 半導体装置の製造方法 | |
US20050048779A1 (en) | Semiconductor device and method of manufacturing the same | |
JPH11195613A (ja) | 紫外線アニール装置およびアニール方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080806 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110909 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110913 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111129 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111221 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150106 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |