KR101905826B1 - 실리콘 웨이퍼 및 그 제조 방법 - Google Patents

실리콘 웨이퍼 및 그 제조 방법 Download PDF

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KR101905826B1
KR101905826B1 KR1020137033445A KR20137033445A KR101905826B1 KR 101905826 B1 KR101905826 B1 KR 101905826B1 KR 1020137033445 A KR1020137033445 A KR 1020137033445A KR 20137033445 A KR20137033445 A KR 20137033445A KR 101905826 B1 KR101905826 B1 KR 101905826B1
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wafer
lpd
heat treatment
silicon wafer
mirror
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KR20140046420A (ko
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이즈미 후세가와
료지 호시
수수무 소노카와
히사유키 사이토
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신에쯔 한도타이 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/57—Physical imperfections the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020137033445A 2011-06-20 2012-05-14 실리콘 웨이퍼 및 그 제조 방법 Active KR101905826B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-135891 2011-06-20
JP2011135891A JP5682471B2 (ja) 2011-06-20 2011-06-20 シリコンウェーハの製造方法
PCT/JP2012/003121 WO2012176370A1 (ja) 2011-06-20 2012-05-14 シリコンウェーハ及びその製造方法

Publications (2)

Publication Number Publication Date
KR20140046420A KR20140046420A (ko) 2014-04-18
KR101905826B1 true KR101905826B1 (ko) 2018-10-08

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KR1020137033445A Active KR101905826B1 (ko) 2011-06-20 2012-05-14 실리콘 웨이퍼 및 그 제조 방법

Country Status (4)

Country Link
US (1) US9337013B2 (https=)
JP (1) JP5682471B2 (https=)
KR (1) KR101905826B1 (https=)
WO (1) WO2012176370A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102195254B1 (ko) * 2013-12-30 2020-12-28 삼성디스플레이 주식회사 표시 장치 제조 방법
KR101895817B1 (ko) * 2014-06-02 2018-09-07 가부시키가이샤 사무코 실리콘 웨이퍼 및 그 제조 방법
DE102015224933A1 (de) * 2015-12-11 2017-06-14 Siltronic Ag Monokristalline Halbleiterscheibe und Verfahren zur Herstellung einer Halbleiterscheibe
JP6920849B2 (ja) 2017-03-27 2021-08-18 株式会社荏原製作所 基板処理方法および装置
WO2019125810A1 (en) 2017-12-21 2019-06-27 Globalwafers Co., Ltd. Method of treating a single crystal silicon ingot to improve the lls ring/core pattern
JP6933187B2 (ja) * 2018-05-01 2021-09-08 信越半導体株式会社 半導体シリコンウェーハの金属不純物除去方法
JP7279682B2 (ja) * 2020-04-17 2023-05-23 信越半導体株式会社 シリコンウェーハの評価方法
JP7251516B2 (ja) * 2020-04-28 2023-04-04 信越半導体株式会社 ウェーハの欠陥領域の判定方法
KR102661941B1 (ko) * 2021-10-14 2024-04-29 에스케이실트론 주식회사 웨이퍼의 결함 영역의 평가 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020185053A1 (en) 2001-05-24 2002-12-12 Lu Fei Method for calibrating nanotopographic measuring equipment
JP2011014645A (ja) * 2009-06-30 2011-01-20 Covalent Materials Corp シリコンウエハの熱処理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2521007B2 (ja) 1992-06-30 1996-07-31 九州電子金属株式会社 シリコン単結晶の製造方法
IT1280041B1 (it) 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
JP3575644B2 (ja) 1995-08-28 2004-10-13 三菱住友シリコン株式会社 シリコンウェーハの製造方法
JP4854936B2 (ja) * 2004-06-15 2012-01-18 信越半導体株式会社 シリコンウエーハの製造方法及びシリコンウエーハ
JP2009212354A (ja) * 2008-03-05 2009-09-17 Sumco Corp シリコン基板の製造方法
JP5446160B2 (ja) * 2008-07-31 2014-03-19 株式会社Ｓｕｍｃｏ 再生シリコンウェーハの製造方法
KR101389058B1 (ko) * 2009-03-25 2014-04-28 가부시키가이샤 사무코 실리콘 웨이퍼 및 그 제조방법
WO2010140671A1 (ja) 2009-06-05 2010-12-09 株式会社Sumco シリコンウェーハの研磨方法及びシリコンウェーハ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020185053A1 (en) 2001-05-24 2002-12-12 Lu Fei Method for calibrating nanotopographic measuring equipment
JP2011014645A (ja) * 2009-06-30 2011-01-20 Covalent Materials Corp シリコンウエハの熱処理方法

Also Published As

Publication number Publication date
KR20140046420A (ko) 2014-04-18
US20140103492A1 (en) 2014-04-17
US9337013B2 (en) 2016-05-10
JP2013004825A (ja) 2013-01-07
WO2012176370A1 (ja) 2012-12-27
JP5682471B2 (ja) 2015-03-11

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