KR101904671B1 - 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법 - Google Patents

기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법 Download PDF

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Publication number
KR101904671B1
KR101904671B1 KR1020170127182A KR20170127182A KR101904671B1 KR 101904671 B1 KR101904671 B1 KR 101904671B1 KR 1020170127182 A KR1020170127182 A KR 1020170127182A KR 20170127182 A KR20170127182 A KR 20170127182A KR 101904671 B1 KR101904671 B1 KR 101904671B1
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KR
South Korea
Prior art keywords
substrate
support
supporting
deposition
pair
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KR1020170127182A
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English (en)
Korean (ko)
Inventor
게이스케 오타니
유키 아이자와
Original Assignee
캐논 톡키 가부시키가이샤
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Priority to KR1020170127182A priority Critical patent/KR101904671B1/ko
Priority to CN201810859502.8A priority patent/CN109576666B/zh
Priority to JP2018182213A priority patent/JP6700361B2/ja
Application granted granted Critical
Publication of KR101904671B1 publication Critical patent/KR101904671B1/ko
Priority to JP2020080118A priority patent/JP7221238B2/ja

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    • H01L51/56—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020170127182A 2017-09-29 2017-09-29 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법 KR101904671B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020170127182A KR101904671B1 (ko) 2017-09-29 2017-09-29 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법
CN201810859502.8A CN109576666B (zh) 2017-09-29 2018-07-31 基板支承构造体和包括其的真空蒸镀装置及蒸镀方法
JP2018182213A JP6700361B2 (ja) 2017-09-29 2018-09-27 基板支持構造体と、これを含む真空蒸着装置及び蒸着方法
JP2020080118A JP7221238B2 (ja) 2017-09-29 2020-04-30 基板支持構造体と、これを含む真空蒸着装置及び蒸着方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170127182A KR101904671B1 (ko) 2017-09-29 2017-09-29 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법

Publications (1)

Publication Number Publication Date
KR101904671B1 true KR101904671B1 (ko) 2018-10-04

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170127182A KR101904671B1 (ko) 2017-09-29 2017-09-29 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법

Country Status (3)

Country Link
JP (2) JP6700361B2 (ja)
KR (1) KR101904671B1 (ja)
CN (1) CN109576666B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021175824A (ja) 2020-03-13 2021-11-04 大日本印刷株式会社 有機デバイスの製造装置の蒸着室の評価方法、評価方法で用いられる標準マスク装置及び標準基板、標準マスク装置の製造方法、評価方法で評価された蒸着室を備える有機デバイスの製造装置、評価方法で評価された蒸着室において形成された蒸着層を備える有機デバイス、並びに有機デバイスの製造装置の蒸着室のメンテナンス方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100554631B1 (ko) * 2002-07-15 2006-02-22 샤프 가부시키가이샤 기판용 카세트
KR100758567B1 (ko) * 2000-04-29 2007-09-14 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 웨이퍼 리액터의 처리량 증대 방법
JP2009071041A (ja) * 2007-09-13 2009-04-02 Canon Anelva Corp 真空処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4328496B2 (ja) * 2001-06-26 2009-09-09 株式会社日立プラントテクノロジー 枚葉基板の移載装置
JP2004042984A (ja) * 2002-07-15 2004-02-12 Sharp Corp 超大型基板用カセット
JP2005340357A (ja) * 2004-05-25 2005-12-08 Shinko Electric Co Ltd 基板収納容器、基板移載装置及び基板移載方法
TWM258968U (en) * 2004-07-22 2005-03-11 Au Optronics Corp Cassette
JP4553124B2 (ja) * 2004-12-16 2010-09-29 株式会社日立ハイテクノロジーズ 真空蒸着方法及びｅｌディスプレイ用パネル
KR100636482B1 (ko) * 2005-07-18 2006-10-18 삼성에스디아이 주식회사 유기 발광표시장치 제조용 홀더
US20070274809A1 (en) * 2006-05-26 2007-11-29 Hsien-Chang Kao Substrate cassette and transport system thereof
JP5169738B2 (ja) * 2008-10-29 2013-03-27 凸版印刷株式会社 基板用カセット
KR20110102678A (ko) * 2010-03-11 2011-09-19 엘지디스플레이 주식회사 기판 저장용 카세트
KR20120006748A (ko) * 2010-07-13 2012-01-19 삼성전기주식회사 박판 이송용 매거진
US8859438B2 (en) * 2010-09-27 2014-10-14 Sharp Kabushiki Kaisha Vapor deposition method, vapor deposition device and organic EL display device
JP2013247302A (ja) * 2012-05-29 2013-12-09 Hitachi High-Technologies Corp 基板バッファ並びに有機ｅｌデバイス製造装置及び同製造方法
CN106148901B (zh) * 2015-05-15 2019-09-03 株式会社达文希斯 有机膜蒸镀装置、方法及有机膜装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100758567B1 (ko) * 2000-04-29 2007-09-14 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 웨이퍼 리액터의 처리량 증대 방법
KR100554631B1 (ko) * 2002-07-15 2006-02-22 샤프 가부시키가이샤 기판용 카세트
JP2009071041A (ja) * 2007-09-13 2009-04-02 Canon Anelva Corp 真空処理装置

Also Published As

Publication number Publication date
CN109576666A (zh) 2019-04-05
JP7221238B2 (ja) 2023-02-13
JP6700361B2 (ja) 2020-05-27
JP2019065393A (ja) 2019-04-25
CN109576666B (zh) 2021-07-06
JP2020122221A (ja) 2020-08-13

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