JP2020122221A - 基板支持構造体と、これを含む真空蒸着装置及び蒸着方法 - Google Patents
基板支持構造体と、これを含む真空蒸着装置及び蒸着方法 Download PDFInfo
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- JP2020122221A JP2020122221A JP2020080118A JP2020080118A JP2020122221A JP 2020122221 A JP2020122221 A JP 2020122221A JP 2020080118 A JP2020080118 A JP 2020080118A JP 2020080118 A JP2020080118 A JP 2020080118A JP 2020122221 A JP2020122221 A JP 2020122221A
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- 239000000758 substrate Substances 0.000 title claims abstract description 173
- 238000007740 vapor deposition Methods 0.000 title abstract description 47
- 238000000034 method Methods 0.000 title abstract description 9
- 238000001704 evaporation Methods 0.000 description 23
- 230000008020 evaporation Effects 0.000 description 22
- 238000000151 deposition Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000012546 transfer Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000011144 upstream manufacturing Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 5
- 230000000717 retained effect Effects 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
ンター支持ピン8が破損する可能性もある。
− 形状及びサイズ: 1500mm x 925mmの直方型
− 材質: ガラス基板
− 厚さ: 500μm及び400μm
mm、4mm、5mm、6mmにした実施例(実施例1−1乃至1−5)を準備して、比較例1及び比較例2との応力比較テストを実施した。
形成してもよい。
隙Pに近い位置に至るまで、その高さが次第に高くなるように、傾斜面として形成されている(h2>h1)。
以下では、図1及び図5を参照して、本発明の基板支持構造体を備えた真空蒸着装置を用い、有機発光素子を製造する方法について説明する。
3を移動制御し基板を移動させて行ってもいいし、マスクホルダー215を移動制御しマスクを移動させて行ってもよい。アライメント終了後、蒸発源210のシャッターを開けて、蒸発源210に接続された回転移動部70を動かしながら、マスク214のパターンに沿って基板40、50に成膜材料を蒸着する。この時、水晶振動子などの膜厚モニタ218は、蒸発レートを計測し、膜厚計217で膜厚に換算する。膜厚計217で換算された膜厚が目標膜厚になるまで蒸着を続ける。膜厚計217で換算した膜厚が目標膜厚に達すると、蒸発源210のシャッターを閉じ蒸着を終了する。
2、3:支持プレート(支持部材)
4:ロボットアーム
5、6、7、23:支持部
8:センター支持ピン
9:弾性部材
10:連結部材
11:追加支持部
40、50:基板
70:回転移動部
200:蒸発源ユニット
210:蒸発源
213:基板ホルダー
214:マスク
215:マスクホルダー
216:電源
217:膜厚計
218:膜厚モニタ
Claims (1)
- 間隙を介して対向に配置された、一対の支持部材を有する基板支持構造体において、
前記一対の支持部材の夫々は、第1支持部と、前記第1支持部よりもその高さが高く形成された第2支持部と、を有していることを特徴とする基板支持構造体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2017-0127182 | 2017-09-29 | ||
KR1020170127182A KR101904671B1 (ko) | 2017-09-29 | 2017-09-29 | 기판지지구조체와, 이를 포함하는 진공 증착 장치 및 증착 방법 |
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JP2018182213A Division JP6700361B2 (ja) | 2017-09-29 | 2018-09-27 | 基板支持構造体と、これを含む真空蒸着装置及び蒸着方法 |
Publications (3)
Publication Number | Publication Date |
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JP2020122221A true JP2020122221A (ja) | 2020-08-13 |
JP2020122221A5 JP2020122221A5 (ja) | 2021-08-19 |
JP7221238B2 JP7221238B2 (ja) | 2023-02-13 |
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JP2018182213A Active JP6700361B2 (ja) | 2017-09-29 | 2018-09-27 | 基板支持構造体と、これを含む真空蒸着装置及び蒸着方法 |
JP2020080118A Active JP7221238B2 (ja) | 2017-09-29 | 2020-04-30 | 基板支持構造体と、これを含む真空蒸着装置及び蒸着方法 |
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JP2018182213A Active JP6700361B2 (ja) | 2017-09-29 | 2018-09-27 | 基板支持構造体と、これを含む真空蒸着装置及び蒸着方法 |
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JP (2) | JP6700361B2 (ja) |
KR (1) | KR101904671B1 (ja) |
CN (1) | CN109576666B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2021175824A (ja) | 2020-03-13 | 2021-11-04 | 大日本印刷株式会社 | 有機デバイスの製造装置の蒸着室の評価方法、評価方法で用いられる標準マスク装置及び標準基板、標準マスク装置の製造方法、評価方法で評価された蒸着室を備える有機デバイスの製造装置、評価方法で評価された蒸着室において形成された蒸着層を備える有機デバイス、並びに有機デバイスの製造装置の蒸着室のメンテナンス方法 |
Citations (4)
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JP2003243482A (ja) * | 2001-06-26 | 2003-08-29 | Hitachi Kiden Kogyo Ltd | 枚葉基板の移載装置並びにそれに用いる収納装置及びハンド並びにこれらの装置によって取り扱われる枚葉基板 |
JP2004042984A (ja) * | 2002-07-15 | 2004-02-12 | Sharp Corp | 超大型基板用カセット |
JP2005340357A (ja) * | 2004-05-25 | 2005-12-08 | Shinko Electric Co Ltd | 基板収納容器、基板移載装置及び基板移載方法 |
KR20120006748A (ko) * | 2010-07-13 | 2012-01-19 | 삼성전기주식회사 | 박판 이송용 매거진 |
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US6508883B1 (en) * | 2000-04-29 | 2003-01-21 | Advanced Technology Materials, Inc. | Throughput enhancement for single wafer reactor |
TWI242830B (en) * | 2002-07-15 | 2005-11-01 | Sharp Kk | Cartridge for substrate |
TWM258968U (en) * | 2004-07-22 | 2005-03-11 | Au Optronics Corp | Cassette |
JP4553124B2 (ja) * | 2004-12-16 | 2010-09-29 | 株式会社日立ハイテクノロジーズ | 真空蒸着方法及びelディスプレイ用パネル |
KR100636482B1 (ko) * | 2005-07-18 | 2006-10-18 | 삼성에스디아이 주식회사 | 유기 발광표시장치 제조용 홀더 |
US20070274809A1 (en) * | 2006-05-26 | 2007-11-29 | Hsien-Chang Kao | Substrate cassette and transport system thereof |
JP2009071041A (ja) * | 2007-09-13 | 2009-04-02 | Canon Anelva Corp | 真空処理装置 |
JP5169738B2 (ja) * | 2008-10-29 | 2013-03-27 | 凸版印刷株式会社 | 基板用カセット |
KR20110102678A (ko) * | 2010-03-11 | 2011-09-19 | 엘지디스플레이 주식회사 | 기판 저장용 카세트 |
CN103124803B (zh) * | 2010-09-27 | 2015-06-17 | 夏普株式会社 | 蒸镀方法、蒸镀装置和有机el显示装置 |
JP2013247302A (ja) * | 2012-05-29 | 2013-12-09 | Hitachi High-Technologies Corp | 基板バッファ並びに有機elデバイス製造装置及び同製造方法 |
CN106148901B (zh) * | 2015-05-15 | 2019-09-03 | 株式会社达文希斯 | 有机膜蒸镀装置、方法及有机膜装置 |
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2017
- 2017-09-29 KR KR1020170127182A patent/KR101904671B1/ko active IP Right Grant
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2018
- 2018-07-31 CN CN201810859502.8A patent/CN109576666B/zh active Active
- 2018-09-27 JP JP2018182213A patent/JP6700361B2/ja active Active
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2020
- 2020-04-30 JP JP2020080118A patent/JP7221238B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003243482A (ja) * | 2001-06-26 | 2003-08-29 | Hitachi Kiden Kogyo Ltd | 枚葉基板の移載装置並びにそれに用いる収納装置及びハンド並びにこれらの装置によって取り扱われる枚葉基板 |
JP2004042984A (ja) * | 2002-07-15 | 2004-02-12 | Sharp Corp | 超大型基板用カセット |
JP2005340357A (ja) * | 2004-05-25 | 2005-12-08 | Shinko Electric Co Ltd | 基板収納容器、基板移載装置及び基板移載方法 |
KR20120006748A (ko) * | 2010-07-13 | 2012-01-19 | 삼성전기주식회사 | 박판 이송용 매거진 |
Also Published As
Publication number | Publication date |
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JP2019065393A (ja) | 2019-04-25 |
JP7221238B2 (ja) | 2023-02-13 |
CN109576666A (zh) | 2019-04-05 |
JP6700361B2 (ja) | 2020-05-27 |
CN109576666B (zh) | 2021-07-06 |
KR101904671B1 (ko) | 2018-10-04 |
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