KR101899621B1 - 구리 도금 방법 - Google Patents

구리 도금 방법 Download PDF

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Publication number
KR101899621B1
KR101899621B1 KR1020137033919A KR20137033919A KR101899621B1 KR 101899621 B1 KR101899621 B1 KR 101899621B1 KR 1020137033919 A KR1020137033919 A KR 1020137033919A KR 20137033919 A KR20137033919 A KR 20137033919A KR 101899621 B1 KR101899621 B1 KR 101899621B1
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KR
South Korea
Prior art keywords
copper plating
substrate
copper
acid
plating bath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020137033919A
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English (en)
Korean (ko)
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KR20140033447A (ko
Inventor
디르크 로데
베른트 뢸프스
준 히구치
Original Assignee
아토테크더치랜드게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20140033447A publication Critical patent/KR20140033447A/ko
Application granted granted Critical
Publication of KR101899621B1 publication Critical patent/KR101899621B1/ko
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0261—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the filling method or the material of the conductive fill
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/0733—Method for plating stud vias, i.e. massive vias formed by plating the bottom of a hole without plating on the walls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/187—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020137033919A 2011-06-22 2012-05-07 구리 도금 방법 Expired - Fee Related KR101899621B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP11171055A EP2537962A1 (en) 2011-06-22 2011-06-22 Method for copper plating
EP11171055.4 2011-06-22
PCT/EP2012/058377 WO2012175249A1 (en) 2011-06-22 2012-05-07 Method for copper plating

Publications (2)

Publication Number Publication Date
KR20140033447A KR20140033447A (ko) 2014-03-18
KR101899621B1 true KR101899621B1 (ko) 2018-09-17

Family

ID=44583606

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137033919A Expired - Fee Related KR101899621B1 (ko) 2011-06-22 2012-05-07 구리 도금 방법

Country Status (9)

Country Link
US (1) US9506158B2 (enExample)
EP (2) EP2537962A1 (enExample)
JP (1) JP6012723B2 (enExample)
KR (1) KR101899621B1 (enExample)
CN (1) CN103703167B (enExample)
ES (1) ES2555140T3 (enExample)
PT (1) PT2723921E (enExample)
TW (1) TWI560326B (enExample)
WO (1) WO2012175249A1 (enExample)

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US9598787B2 (en) 2013-03-14 2017-03-21 Rohm And Haas Electronic Materials Llc Method of filling through-holes
US20140262801A1 (en) * 2013-03-14 2014-09-18 Rohm And Haas Electronic Materials Llc Method of filling through-holes
US9512529B2 (en) * 2013-06-04 2016-12-06 Rohm And Haas Electronic Materials Llc Electroplating baths of silver and tin alloys
JP6585434B2 (ja) * 2014-10-06 2019-10-02 株式会社荏原製作所 めっき方法
KR101898404B1 (ko) 2014-12-17 2018-09-12 미쓰이 가가쿠 가부시키가이샤 기판 중간체, 관통 비어 전극 기판 및 관통 비어 전극 형성 방법
KR102426521B1 (ko) 2015-04-20 2022-07-27 아토테크 도이칠란트 게엠베하 운트 콤파니 카게 전해 구리 도금 배쓰 조성물 및 그 사용 방법
US20160312372A1 (en) * 2015-04-27 2016-10-27 Rohm And Haas Electronic Materials Llc Acid copper electroplating bath and method for electroplating low internal stress and good ductiility copper deposits
JP6612525B2 (ja) * 2015-05-13 2019-11-27 石原ケミカル株式会社 電気銅メッキ用の前処理液及び電気銅メッキ方法
JP5907301B1 (ja) 2015-05-15 2016-04-26 住友金属鉱山株式会社 銀コート銅粉及びそれを用いた銅ペースト、導電性塗料、導電性シート、並びに銀コート銅粉の製造方法
JP5907302B1 (ja) 2015-05-15 2016-04-26 住友金属鉱山株式会社 銅粉及びそれを用いた銅ペースト、導電性塗料、導電性シート、並びに銅粉の製造方法
JP6790075B2 (ja) 2015-08-31 2020-11-25 アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ 水性銅めっき浴および基板上での銅または銅合金の析出方法
EP3135709B1 (en) 2015-08-31 2018-01-10 ATOTECH Deutschland GmbH Imidazoyl urea polymers and their use in metal or metal alloy plating bath compositions
EP3141633B1 (en) 2015-09-10 2018-05-02 ATOTECH Deutschland GmbH Copper plating bath composition
US10512174B2 (en) 2016-02-15 2019-12-17 Rohm And Haas Electronic Materials Llc Method of filling through-holes to reduce voids and other defects
US10508357B2 (en) 2016-02-15 2019-12-17 Rohm And Haas Electronic Materials Llc Method of filling through-holes to reduce voids and other defects
KR101733141B1 (ko) * 2016-03-18 2017-05-08 한국생산기술연구원 고평탄 구리도금막 형성을 위한 전해 구리 도금용 유기첨가제 및 이를 포함하는 전해구리 도금액
CN109790638B (zh) 2016-08-15 2021-06-18 德国艾托特克公司 用于电解镀铜的酸性水性组合物
US10060034B2 (en) * 2017-01-23 2018-08-28 Rohm And Haas Electronic Materials Llc Electroless copper plating compositions
EP3360988B1 (en) 2017-02-09 2019-06-26 ATOTECH Deutschland GmbH Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths
JP6948587B2 (ja) * 2017-04-19 2021-10-13 石原ケミカル株式会社 低応力皮膜形成用の電気銅メッキ浴及び電気銅メッキ方法
TWI626989B (zh) * 2017-04-21 2018-06-21 國立中興大學 化學鍍銅的前處理方法及其使用的銅離子錯合物觸媒溶液及調節液
EP3508620B1 (en) 2018-01-09 2021-05-19 ATOTECH Deutschland GmbH Ureylene additive, its use and a preparation method therefor
KR102075729B1 (ko) * 2018-02-19 2020-02-11 한국생산기술연구원 고평탄 구리 도금 전해 방법
KR102104261B1 (ko) * 2018-05-25 2020-04-24 한국생산기술연구원 고평탄 구리 도금 전해 방법
EP3901331A1 (en) 2020-04-23 2021-10-27 ATOTECH Deutschland GmbH Acidic aqueous composition for electrolytically depositing a copper deposit
CN111945192B (zh) * 2020-08-11 2021-08-06 深圳市创智成功科技有限公司 用于hdi板和载板的盲孔填孔电镀铜溶液
EP4032930B1 (en) 2021-01-22 2023-08-30 Atotech Deutschland GmbH & Co. KG Biuret-based quaternized polymers and their use in metal or metal alloy plating baths
CN117661051A (zh) * 2022-08-31 2024-03-08 华为技术有限公司 组合物及其应用、整平剂及其制备方法

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JP2001152387A (ja) * 1999-09-16 2001-06-05 Ishihara Chem Co Ltd ボイドフリー銅メッキ方法
JP2009541580A (ja) * 2006-06-21 2009-11-26 アトテック・ドイチュラント・ゲーエムベーハー 亜鉛および亜鉛合金被覆の電気的析出のための、シアン化物を含有しない水性アルカリ性浴

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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001152387A (ja) * 1999-09-16 2001-06-05 Ishihara Chem Co Ltd ボイドフリー銅メッキ方法
JP2009541580A (ja) * 2006-06-21 2009-11-26 アトテック・ドイチュラント・ゲーエムベーハー 亜鉛および亜鉛合金被覆の電気的析出のための、シアン化物を含有しない水性アルカリ性浴

Also Published As

Publication number Publication date
EP2723921A1 (en) 2014-04-30
JP6012723B2 (ja) 2016-10-25
EP2723921B1 (en) 2015-10-07
US9506158B2 (en) 2016-11-29
PT2723921E (pt) 2015-12-24
CN103703167A (zh) 2014-04-02
US20140102910A1 (en) 2014-04-17
TW201313965A (zh) 2013-04-01
ES2555140T3 (es) 2015-12-29
TWI560326B (en) 2016-12-01
EP2537962A1 (en) 2012-12-26
CN103703167B (zh) 2016-06-29
WO2012175249A1 (en) 2012-12-27
JP2014523485A (ja) 2014-09-11
KR20140033447A (ko) 2014-03-18

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