TWI560326B - Method for copper plating - Google Patents
Method for copper platingInfo
- Publication number
- TWI560326B TWI560326B TW101121412A TW101121412A TWI560326B TW I560326 B TWI560326 B TW I560326B TW 101121412 A TW101121412 A TW 101121412A TW 101121412 A TW101121412 A TW 101121412A TW I560326 B TWI560326 B TW I560326B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper plating
- plating
- copper
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000007747 plating Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0733—Method for plating stud vias, i.e. massive vias formed by plating the bottom of a hole without plating on the walls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/187—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11171055A EP2537962A1 (en) | 2011-06-22 | 2011-06-22 | Method for copper plating |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201313965A TW201313965A (zh) | 2013-04-01 |
TWI560326B true TWI560326B (en) | 2016-12-01 |
Family
ID=44583606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101121412A TWI560326B (en) | 2011-06-22 | 2012-06-14 | Method for copper plating |
Country Status (9)
Country | Link |
---|---|
US (1) | US9506158B2 (zh) |
EP (2) | EP2537962A1 (zh) |
JP (1) | JP6012723B2 (zh) |
KR (1) | KR101899621B1 (zh) |
CN (1) | CN103703167B (zh) |
ES (1) | ES2555140T3 (zh) |
PT (1) | PT2723921E (zh) |
TW (1) | TWI560326B (zh) |
WO (1) | WO2012175249A1 (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9598787B2 (en) | 2013-03-14 | 2017-03-21 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes |
US20140262801A1 (en) * | 2013-03-14 | 2014-09-18 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes |
US9512529B2 (en) * | 2013-06-04 | 2016-12-06 | Rohm And Haas Electronic Materials Llc | Electroplating baths of silver and tin alloys |
JP6585434B2 (ja) * | 2014-10-06 | 2019-10-02 | 株式会社荏原製作所 | めっき方法 |
US10950532B2 (en) | 2014-12-17 | 2021-03-16 | Mitsui Chemicals, Inc. | Substrate intermediary body, through-hole via electrode substrate, and through-hole via electrode formation method |
EP3286358B1 (en) | 2015-04-20 | 2019-03-20 | ATOTECH Deutschland GmbH | Electrolytic copper plating bath compositions and a method for their use |
US20160312372A1 (en) * | 2015-04-27 | 2016-10-27 | Rohm And Haas Electronic Materials Llc | Acid copper electroplating bath and method for electroplating low internal stress and good ductiility copper deposits |
JP6612525B2 (ja) * | 2015-05-13 | 2019-11-27 | 石原ケミカル株式会社 | 電気銅メッキ用の前処理液及び電気銅メッキ方法 |
JP5907302B1 (ja) | 2015-05-15 | 2016-04-26 | 住友金属鉱山株式会社 | 銅粉及びそれを用いた銅ペースト、導電性塗料、導電性シート、並びに銅粉の製造方法 |
JP5907301B1 (ja) | 2015-05-15 | 2016-04-26 | 住友金属鉱山株式会社 | 銀コート銅粉及びそれを用いた銅ペースト、導電性塗料、導電性シート、並びに銀コート銅粉の製造方法 |
JP6790075B2 (ja) | 2015-08-31 | 2020-11-25 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングAtotech Deutschland GmbH | 水性銅めっき浴および基板上での銅または銅合金の析出方法 |
EP3135709B1 (en) | 2015-08-31 | 2018-01-10 | ATOTECH Deutschland GmbH | Imidazoyl urea polymers and their use in metal or metal alloy plating bath compositions |
EP3141633B1 (en) | 2015-09-10 | 2018-05-02 | ATOTECH Deutschland GmbH | Copper plating bath composition |
US10512174B2 (en) | 2016-02-15 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes to reduce voids and other defects |
US10508357B2 (en) | 2016-02-15 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes to reduce voids and other defects |
KR101733141B1 (ko) * | 2016-03-18 | 2017-05-08 | 한국생산기술연구원 | 고평탄 구리도금막 형성을 위한 전해 구리 도금용 유기첨가제 및 이를 포함하는 전해구리 도금액 |
JP7064115B2 (ja) | 2016-08-15 | 2022-05-10 | アトテック ドイチュラント ゲー・エム・ベー・ハー ウント コー. カー・ゲー | 電解銅めっきのための酸性水性組成物 |
US10060034B2 (en) * | 2017-01-23 | 2018-08-28 | Rohm And Haas Electronic Materials Llc | Electroless copper plating compositions |
EP3360988B1 (en) | 2017-02-09 | 2019-06-26 | ATOTECH Deutschland GmbH | Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths |
TWI626989B (zh) * | 2017-04-21 | 2018-06-21 | 國立中興大學 | 化學鍍銅的前處理方法及其使用的銅離子錯合物觸媒溶液及調節液 |
EP3508620B1 (en) | 2018-01-09 | 2021-05-19 | ATOTECH Deutschland GmbH | Ureylene additive, its use and a preparation method therefor |
KR102075729B1 (ko) * | 2018-02-19 | 2020-02-11 | 한국생산기술연구원 | 고평탄 구리 도금 전해 방법 |
KR102104261B1 (ko) * | 2018-05-25 | 2020-04-24 | 한국생산기술연구원 | 고평탄 구리 도금 전해 방법 |
EP3901331A1 (en) | 2020-04-23 | 2021-10-27 | ATOTECH Deutschland GmbH | Acidic aqueous composition for electrolytically depositing a copper deposit |
CN111945192B (zh) * | 2020-08-11 | 2021-08-06 | 深圳市创智成功科技有限公司 | 用于hdi板和载板的盲孔填孔电镀铜溶液 |
EP4032930B1 (en) | 2021-01-22 | 2023-08-30 | Atotech Deutschland GmbH & Co. KG | Biuret-based quaternized polymers and their use in metal or metal alloy plating baths |
CN117661051A (zh) * | 2022-08-31 | 2024-03-08 | 华为技术有限公司 | 组合物及其应用、整平剂及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3542655A (en) * | 1968-04-29 | 1970-11-24 | M & T Chemicals Inc | Electrodeposition of copper |
CN1764739A (zh) * | 2003-03-25 | 2006-04-26 | 埃托特克德国有限公司 | 用于蚀刻铜表面的溶液和在铜表面上沉积金属的方法 |
TW200940751A (en) * | 2007-12-12 | 2009-10-01 | Rohm & Haas Elect Mat | Electroplating bronze |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2758076A (en) | 1952-10-31 | 1956-08-07 | Metal & Thermit Corp | Bright acid copper plating |
DE3916207A1 (de) * | 1989-05-18 | 1991-01-03 | Bayer Ag | Verfahren und neue zwischenprodukte zur herstellung von triazolon-derivaten |
JP2001073182A (ja) | 1999-07-15 | 2001-03-21 | Boc Group Inc:The | 改良された酸性銅電気メッキ用溶液 |
JP3498306B2 (ja) | 1999-09-16 | 2004-02-16 | 石原薬品株式会社 | ボイドフリー銅メッキ方法 |
US6863795B2 (en) | 2001-03-23 | 2005-03-08 | Interuniversitair Microelektronica Centrum (Imec) | Multi-step method for metal deposition |
US6911068B2 (en) * | 2001-10-02 | 2005-06-28 | Shipley Company, L.L.C. | Plating bath and method for depositing a metal layer on a substrate |
TW200401848A (en) * | 2002-06-03 | 2004-02-01 | Shipley Co Llc | Leveler compounds |
JP2006316350A (ja) * | 2005-04-13 | 2006-11-24 | Hitachi Chem Co Ltd | 無電解ニッケルめっき用前処理液および無電解ニッケルめっきの前処理方法 |
EP1870495A1 (de) * | 2006-06-21 | 2007-12-26 | Atotech Deutschland Gmbh | Wässriges alkalisches cyanidfreies Bad zur galvanischen Abscheidung von Zink- und Zinklegierungsüberzügen |
JP2009041097A (ja) * | 2007-08-10 | 2009-02-26 | Rohm & Haas Electronic Materials Llc | 銅めっき方法 |
EP2099268A1 (en) * | 2008-03-07 | 2009-09-09 | Atotech Deutschland Gmbh | Non-etching adhesion composition, method of preparing a work piece and method of forming coppper structures on a circuit carrier substrate |
CN101481812B (zh) * | 2008-12-31 | 2011-04-06 | 清华大学 | 一种集成电路铜布线电沉积用的电解液 |
US8608931B2 (en) * | 2009-09-25 | 2013-12-17 | Rohm And Haas Electronic Materials Llc | Anti-displacement hard gold compositions |
CN101824621A (zh) | 2010-04-12 | 2010-09-08 | 海宁市科泰克金属表面技术有限公司 | 一种高性能铜、镍保护剂 |
CN102277567B (zh) * | 2011-07-26 | 2013-04-17 | 陕西师范大学 | 用于微孔填充的化学镀铜溶液 |
-
2011
- 2011-06-22 EP EP11171055A patent/EP2537962A1/en not_active Withdrawn
-
2012
- 2012-05-07 CN CN201280030816.8A patent/CN103703167B/zh active Active
- 2012-05-07 ES ES12719380.3T patent/ES2555140T3/es active Active
- 2012-05-07 EP EP12719380.3A patent/EP2723921B1/en active Active
- 2012-05-07 KR KR1020137033919A patent/KR101899621B1/ko active IP Right Grant
- 2012-05-07 JP JP2014516238A patent/JP6012723B2/ja active Active
- 2012-05-07 WO PCT/EP2012/058377 patent/WO2012175249A1/en active Application Filing
- 2012-05-07 US US14/124,268 patent/US9506158B2/en active Active
- 2012-05-07 PT PT127193803T patent/PT2723921E/pt unknown
- 2012-06-14 TW TW101121412A patent/TWI560326B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3542655A (en) * | 1968-04-29 | 1970-11-24 | M & T Chemicals Inc | Electrodeposition of copper |
CN1764739A (zh) * | 2003-03-25 | 2006-04-26 | 埃托特克德国有限公司 | 用于蚀刻铜表面的溶液和在铜表面上沉积金属的方法 |
TW200940751A (en) * | 2007-12-12 | 2009-10-01 | Rohm & Haas Elect Mat | Electroplating bronze |
Also Published As
Publication number | Publication date |
---|---|
EP2537962A1 (en) | 2012-12-26 |
EP2723921B1 (en) | 2015-10-07 |
CN103703167B (zh) | 2016-06-29 |
KR20140033447A (ko) | 2014-03-18 |
JP6012723B2 (ja) | 2016-10-25 |
JP2014523485A (ja) | 2014-09-11 |
TW201313965A (zh) | 2013-04-01 |
KR101899621B1 (ko) | 2018-09-17 |
US20140102910A1 (en) | 2014-04-17 |
CN103703167A (zh) | 2014-04-02 |
US9506158B2 (en) | 2016-11-29 |
WO2012175249A1 (en) | 2012-12-27 |
ES2555140T3 (es) | 2015-12-29 |
EP2723921A1 (en) | 2014-04-30 |
PT2723921E (pt) | 2015-12-24 |
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