KR101861394B1 - 산화물 박막 제조용 조성물 및 이 조성물을 이용하는 산화물 박막의 제조방법 - Google Patents

산화물 박막 제조용 조성물 및 이 조성물을 이용하는 산화물 박막의 제조방법 Download PDF

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KR101861394B1
KR101861394B1 KR1020137012716A KR20137012716A KR101861394B1 KR 101861394 B1 KR101861394 B1 KR 101861394B1 KR 1020137012716 A KR1020137012716 A KR 1020137012716A KR 20137012716 A KR20137012716 A KR 20137012716A KR 101861394 B1 KR101861394 B1 KR 101861394B1
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South Korea
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group
compound
thin film
organic solvent
composition
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KR1020137012716A
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English (en)
Korean (ko)
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KR20130140731A (ko
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코이치로 이나바
코우지 토요타
켄이치 하가
코이치 토쿠도메
켄지 요시노
유진 타케모토
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토소 화인켐 가부시키가이샤
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Priority claimed from JP2010235480A external-priority patent/JP5756273B2/ja
Priority claimed from JP2010235962A external-priority patent/JP5822449B2/ja
Priority claimed from JP2010235478A external-priority patent/JP5756272B2/ja
Priority claimed from JP2010235992A external-priority patent/JP5892641B2/ja
Application filed by 토소 화인켐 가부시키가이샤 filed Critical 토소 화인켐 가부시키가이샤
Publication of KR20130140731A publication Critical patent/KR20130140731A/ko
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Publication of KR101861394B1 publication Critical patent/KR101861394B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/02—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/06—Zinc compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020137012716A 2010-10-20 2011-10-19 산화물 박막 제조용 조성물 및 이 조성물을 이용하는 산화물 박막의 제조방법 KR101861394B1 (ko)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
JP2010235994 2010-10-20
JP2010235996 2010-10-20
JPJP-P-2010-235962 2010-10-20
JP2010235480A JP5756273B2 (ja) 2010-10-20 2010-10-20 酸化亜鉛薄膜製造用組成物およびドープ酸化亜鉛薄膜製造用組成物を用いた酸化亜鉛薄膜製造方法、およびこの方法で製造した帯電防止薄膜、紫外線カット薄膜、透明電極薄膜
JP2010235962A JP5822449B2 (ja) 2010-10-20 2010-10-20 酸化亜鉛薄膜製造用組成物およびドープ酸化亜鉛薄膜製造用組成物
JP2010235478A JP5756272B2 (ja) 2010-10-20 2010-10-20 酸化亜鉛薄膜製造用組成物およびドープ酸化亜鉛薄膜製造用組成物
JP2010235992A JP5892641B2 (ja) 2010-10-20 2010-10-20 酸化亜鉛薄膜製造方法、およびこの方法で製造した帯電防止薄膜、紫外線カット薄膜、透明電極薄膜
JPJP-P-2010-235992 2010-10-20
JPJP-P-2010-235478 2010-10-20
JPJP-P-2010-235480 2010-10-20
JPJP-P-2010-235996 2010-10-20
JPJP-P-2010-235994 2010-10-20
PCT/JP2011/074022 WO2012053542A1 (ja) 2010-10-20 2011-10-19 酸化物薄膜製造用組成物およびこの組成物を用いる酸化物薄膜の製造方法

Publications (2)

Publication Number Publication Date
KR20130140731A KR20130140731A (ko) 2013-12-24
KR101861394B1 true KR101861394B1 (ko) 2018-05-28

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KR1020137012716A KR101861394B1 (ko) 2010-10-20 2011-10-19 산화물 박막 제조용 조성물 및 이 조성물을 이용하는 산화물 박막의 제조방법

Country Status (4)

Country Link
KR (1) KR101861394B1 (zh)
CN (1) CN103153865B (zh)
TW (1) TWI543940B (zh)
WO (1) WO2012053542A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104254495B (zh) * 2012-04-25 2017-03-29 东曹精细化工株式会社 复合氧化物薄膜制造用组合物和使用该组合物的薄膜的制造方法、以及复合氧化物薄膜
EP2858099A4 (en) * 2012-06-01 2015-05-20 Mitsubishi Chem Corp PROCESS FOR PRODUCING SEMICONDUCTOR LAYER CONTAINING METAL OXIDE AND ELECTRONIC DEVICE
JP6389732B2 (ja) * 2014-10-24 2018-09-12 東ソー・ファインケム株式会社 第２族元素を含有する酸化亜鉛薄膜製造用組成物およびその製造方法
JP7015112B2 (ja) 2017-02-02 2022-02-15 東ソー・ファインケム株式会社 ジアルキル亜鉛およびジアルキル亜鉛部分加水分解物含有溶液、並びにこれらの溶液を用いる酸化亜鉛薄膜の製造方法
CN108091414B (zh) * 2017-12-13 2020-05-15 浙江海洋大学 一种银纳米线复合透明导电薄膜及其制备
JP7060406B2 (ja) * 2018-02-28 2022-04-26 東ソー・ファインケム株式会社 酸化亜鉛薄膜形成用組成物及び酸化亜鉛薄膜の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080032443A1 (en) * 2006-08-02 2008-02-07 Xerox Corporation Fabricating Zinc oxide semiconductor using hydrolysis
JP5822449B2 (ja) 2010-10-20 2015-11-24 東ソー・ファインケム株式会社 酸化亜鉛薄膜製造用組成物およびドープ酸化亜鉛薄膜製造用組成物

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Publication number Priority date Publication date Assignee Title
JPH07182939A (ja) * 1993-12-22 1995-07-21 Mitsubishi Materials Corp 透明導電膜形成用組成物及び透明導電膜形成方法
KR100876947B1 (ko) * 2007-10-24 2009-01-07 연세대학교 산학협력단 산화물 박막을 위한 액상 제조방법
JP5288464B2 (ja) * 2008-11-27 2013-09-11 東ソー・ファインケム株式会社 酸化亜鉛薄膜の製造方法
JP5674186B2 (ja) * 2010-02-16 2015-02-25 国立大学法人 宮崎大学 酸化亜鉛薄膜製造方法、およびこの方法で製造した帯電防止薄膜、紫外線カット薄膜、透明電極薄膜
JP5688225B2 (ja) * 2010-02-16 2015-03-25 東ソー・ファインケム株式会社 酸化亜鉛薄膜製造用組成物
JP5515144B2 (ja) * 2009-05-12 2014-06-11 東ソー・ファインケム株式会社 ドープ酸化亜鉛薄膜形成用組成物及びドープ酸化亜鉛薄膜の製造方法
JP5641717B2 (ja) * 2009-08-27 2014-12-17 東ソー・ファインケム株式会社 ドープ酸化亜鉛薄膜製造用組成物とそれを用いたドープ酸化亜鉛薄膜の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080032443A1 (en) * 2006-08-02 2008-02-07 Xerox Corporation Fabricating Zinc oxide semiconductor using hydrolysis
JP5822449B2 (ja) 2010-10-20 2015-11-24 東ソー・ファインケム株式会社 酸化亜鉛薄膜製造用組成物およびドープ酸化亜鉛薄膜製造用組成物

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Publication number Publication date
TW201231404A (en) 2012-08-01
CN103153865B (zh) 2016-04-27
KR20130140731A (ko) 2013-12-24
TWI543940B (zh) 2016-08-01
CN103153865A (zh) 2013-06-12
WO2012053542A1 (ja) 2012-04-26

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