KR101856722B1 - 파워 절연 게이트형 전계 효과 트랜지스터 - Google Patents

파워 절연 게이트형 전계 효과 트랜지스터 Download PDF

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KR101856722B1
KR101856722B1 KR1020110091130A KR20110091130A KR101856722B1 KR 101856722 B1 KR101856722 B1 KR 101856722B1 KR 1020110091130 A KR1020110091130 A KR 1020110091130A KR 20110091130 A KR20110091130 A KR 20110091130A KR 101856722 B1 KR101856722 B1 KR 101856722B1
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semiconductor layer
electrode
drain electrode
oxide semiconductor
source electrode
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KR20120031127A (ko
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야스히코 타케무라
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020110091130A 2010-09-22 2011-09-08 파워 절연 게이트형 전계 효과 트랜지스터 Expired - Fee Related KR101856722B1 (ko)

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JPJP-P-2010-212185 2010-09-22
JP2010212185 2010-09-22

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KR20120031127A KR20120031127A (ko) 2012-03-30
KR101856722B1 true KR101856722B1 (ko) 2018-05-10

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US (1) US8994003B2 (https=)
JP (1) JP5938182B2 (https=)
KR (1) KR101856722B1 (https=)
CN (1) CN102412305B (https=)
TW (1) TWI529935B (https=)

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