KR101807419B1 - 다이 본더, 본딩 방법 및 반도체 장치의 제조 방법 - Google Patents

다이 본더, 본딩 방법 및 반도체 장치의 제조 방법 Download PDF

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KR101807419B1
KR101807419B1 KR1020160110049A KR20160110049A KR101807419B1 KR 101807419 B1 KR101807419 B1 KR 101807419B1 KR 1020160110049 A KR1020160110049 A KR 1020160110049A KR 20160110049 A KR20160110049 A KR 20160110049A KR 101807419 B1 KR101807419 B1 KR 101807419B1
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South Korea
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wafer
die
bonding
dies
pick
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KR20170026281A (ko
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히로시 마끼
게이스께 나다모또
나오끼 오까모또
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파스포드 테크놀로지 주식회사
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0446Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H01L21/52
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H01L21/67712
    • H01L21/67721
    • H01L21/6835
    • H01L21/68742
    • H01L22/12
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3206Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3212Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07173Means for moving chips, wafers or other parts, e.g. conveyor belts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07178Means for aligning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07183Means for monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)
KR1020160110049A 2015-08-31 2016-08-29 다이 본더, 본딩 방법 및 반도체 장치의 제조 방법 Active KR101807419B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-170628 2015-08-31
JP2015170628A JP6584234B2 (ja) 2015-08-31 2015-08-31 ダイボンダ、ボンディング方法および半導体装置の製造方法

Related Child Applications (1)

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KR1020170164039A Division KR101838456B1 (ko) 2015-08-31 2017-12-01 다이 본더, 본딩 방법 및 반도체 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20170026281A KR20170026281A (ko) 2017-03-08
KR101807419B1 true KR101807419B1 (ko) 2017-12-08

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KR1020160110049A Active KR101807419B1 (ko) 2015-08-31 2016-08-29 다이 본더, 본딩 방법 및 반도체 장치의 제조 방법
KR1020170164039A Active KR101838456B1 (ko) 2015-08-31 2017-12-01 다이 본더, 본딩 방법 및 반도체 장치의 제조 방법

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Country Status (4)

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JP (1) JP6584234B2 (https=)
KR (2) KR101807419B1 (https=)
CN (1) CN106486398B (https=)
TW (1) TWI623982B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101802080B1 (ko) 2016-05-31 2017-11-27 세메스 주식회사 웨이퍼로부터 다이들을 픽업하는 방법
JP6846958B2 (ja) * 2017-03-09 2021-03-24 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP6694404B2 (ja) * 2017-03-17 2020-05-13 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP6818608B2 (ja) * 2017-03-28 2021-01-20 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP6975551B2 (ja) * 2017-05-18 2021-12-01 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP6868471B2 (ja) * 2017-05-31 2021-05-12 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP7102113B2 (ja) * 2017-09-11 2022-07-19 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
WO2019065394A1 (ja) * 2017-09-29 2019-04-04 株式会社新川 実装装置
CN108155125B (zh) * 2017-12-25 2020-07-21 北京中电科电子装备有限公司 一种半导体芯片贴片装置
JP7018338B2 (ja) * 2018-03-19 2022-02-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
KR102568388B1 (ko) * 2018-06-04 2023-08-18 한화정밀기계 주식회사 본딩 장치
CN110364446B (zh) * 2019-07-22 2021-04-09 深圳市得润光学有限公司 一种塑封光电耦合器的制造装置
JP7285162B2 (ja) * 2019-08-05 2023-06-01 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN110690152A (zh) * 2019-08-28 2020-01-14 苏州均华精密机械有限公司 大尺寸晶片接合装置
TWI739438B (zh) * 2020-05-21 2021-09-11 鴻騏新技股份有限公司 具有雙作業線的基板貼合機台以及具有雙作業線的基板處理系統
JP7498630B2 (ja) * 2020-09-11 2024-06-12 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7704534B2 (ja) * 2021-01-18 2025-07-08 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7570258B2 (ja) 2021-03-08 2024-10-21 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7714414B2 (ja) * 2021-09-13 2025-07-29 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7757097B2 (ja) * 2021-09-15 2025-10-21 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN115375612A (zh) * 2021-12-11 2022-11-22 微见智能封装技术(深圳)有限公司 一种提高芯片识别效率的方法
WO2025028255A1 (ja) * 2023-07-28 2025-02-06 東京エレクトロン株式会社 接合装置、接合システム、及び接合方法

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JP2014017313A (ja) * 2012-07-06 2014-01-30 Panasonic Corp 部品実装装置
WO2014097463A1 (ja) 2012-12-20 2014-06-26 富士機械製造株式会社 ダイ供給装置

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JP2010040738A (ja) * 2008-08-05 2010-02-18 Toshiba Corp 半導体装置の製造装置及び製造方法
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CN102834910B (zh) 2010-04-13 2015-07-22 日本先锋公司 元件移送装置及方法
JP5815345B2 (ja) * 2011-09-16 2015-11-17 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
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Publication number Priority date Publication date Assignee Title
WO2013145114A1 (ja) * 2012-03-27 2013-10-03 富士機械製造株式会社 ダイ供給装置
JP2014017313A (ja) * 2012-07-06 2014-01-30 Panasonic Corp 部品実装装置
WO2014097463A1 (ja) 2012-12-20 2014-06-26 富士機械製造株式会社 ダイ供給装置

Also Published As

Publication number Publication date
KR20170136483A (ko) 2017-12-11
JP6584234B2 (ja) 2019-10-02
KR20170026281A (ko) 2017-03-08
KR101838456B1 (ko) 2018-03-13
TW201719773A (zh) 2017-06-01
CN106486398A (zh) 2017-03-08
CN106486398B (zh) 2019-07-09
TWI623982B (zh) 2018-05-11
JP2017050327A (ja) 2017-03-09

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