KR101805190B1 - 전자 디바이스의 제조 방법, 박막 트랜지스터, 전기 광학 장치 및 센서 - Google Patents

전자 디바이스의 제조 방법, 박막 트랜지스터, 전기 광학 장치 및 센서 Download PDF

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KR101805190B1
KR101805190B1 KR1020110040644A KR20110040644A KR101805190B1 KR 101805190 B1 KR101805190 B1 KR 101805190B1 KR 1020110040644 A KR1020110040644 A KR 1020110040644A KR 20110040644 A KR20110040644 A KR 20110040644A KR 101805190 B1 KR101805190 B1 KR 101805190B1
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South Korea
Prior art keywords
film forming
layer
partial pressure
forming step
film
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KR1020110040644A
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Korean (ko)
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KR20110126038A (ko
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마사시 오노
마사히로 다카타
마사유키 스즈키
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후지필름 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020110040644A 2010-05-14 2011-04-29 전자 디바이스의 제조 방법, 박막 트랜지스터, 전기 광학 장치 및 센서 KR101805190B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-112122 2010-05-14
JP2010112122A JP5557595B2 (ja) 2010-05-14 2010-05-14 電子デバイスの製造方法、薄膜トランジスタ、電気光学装置及びセンサー

Publications (2)

Publication Number Publication Date
KR20110126038A KR20110126038A (ko) 2011-11-22
KR101805190B1 true KR101805190B1 (ko) 2017-12-05

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KR1020110040644A KR101805190B1 (ko) 2010-05-14 2011-04-29 전자 디바이스의 제조 방법, 박막 트랜지스터, 전기 광학 장치 및 센서

Country Status (3)

Country Link
JP (1) JP5557595B2 (zh)
KR (1) KR101805190B1 (zh)
TW (1) TWI495738B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6062552B2 (ja) 2014-03-17 2017-01-18 株式会社東芝 不揮発性記憶装置
CN107924930B (zh) * 2015-08-19 2022-07-15 索尼公司 绝缘材料、电子器件和成像装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073701A (ja) * 2005-09-06 2007-03-22 Canon Inc アモルファス酸化物層を用いた薄膜トランジスタ
JP2010062229A (ja) * 2008-09-01 2010-03-18 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び薄膜トランジスタの作製方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
EP1810335B1 (en) * 2004-11-10 2020-05-27 Canon Kabushiki Kaisha Light-emitting device
JP2007056329A (ja) * 2005-08-25 2007-03-08 Konica Minolta Holdings Inc 透明導電膜及びその形成方法
JP4958253B2 (ja) * 2005-09-02 2012-06-20 財団法人高知県産業振興センター 薄膜トランジスタ
JP5247448B2 (ja) * 2006-08-10 2013-07-24 株式会社アルバック 導電膜形成方法、薄膜トランジスタの製造方法
JP4727684B2 (ja) * 2007-03-27 2011-07-20 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP5489423B2 (ja) * 2007-09-21 2014-05-14 富士フイルム株式会社 放射線撮像素子
TWI500160B (zh) * 2008-08-08 2015-09-11 Semiconductor Energy Lab 半導體裝置及其製造方法
CN102165570A (zh) * 2008-08-29 2011-08-24 株式会社爱发科 场效应晶体管的制造方法和制造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073701A (ja) * 2005-09-06 2007-03-22 Canon Inc アモルファス酸化物層を用いた薄膜トランジスタ
JP2010062229A (ja) * 2008-09-01 2010-03-18 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び薄膜トランジスタの作製方法

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TW201231695A (en) 2012-08-01
TWI495738B (zh) 2015-08-11
JP2011243631A (ja) 2011-12-01
KR20110126038A (ko) 2011-11-22
JP5557595B2 (ja) 2014-07-23

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