KR101805190B1 - 전자 디바이스의 제조 방법, 박막 트랜지스터, 전기 광학 장치 및 센서 - Google Patents
전자 디바이스의 제조 방법, 박막 트랜지스터, 전기 광학 장치 및 센서 Download PDFInfo
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- KR101805190B1 KR101805190B1 KR1020110040644A KR20110040644A KR101805190B1 KR 101805190 B1 KR101805190 B1 KR 101805190B1 KR 1020110040644 A KR1020110040644 A KR 1020110040644A KR 20110040644 A KR20110040644 A KR 20110040644A KR 101805190 B1 KR101805190 B1 KR 101805190B1
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- South Korea
- Prior art keywords
- film forming
- layer
- partial pressure
- forming step
- film
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title abstract description 45
- 239000010409 thin film Substances 0.000 title description 53
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 163
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 162
- 239000001301 oxygen Substances 0.000 claims abstract description 162
- 239000000758 substrate Substances 0.000 claims abstract description 131
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- 239000004065 semiconductor Substances 0.000 claims description 51
- 238000001771 vacuum deposition Methods 0.000 claims description 20
- 239000012212 insulator Substances 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
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- 238000000137 annealing Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
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- 229910052737 gold Inorganic materials 0.000 description 3
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- 150000002602 lanthanoids Chemical class 0.000 description 3
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- 229910052727 yttrium Inorganic materials 0.000 description 3
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- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
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- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
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- 230000003647 oxidation Effects 0.000 description 2
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- 229920002492 poly(sulfone) Polymers 0.000 description 2
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- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
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- 229910007541 Zn O Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
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- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000002650 laminated plastic Substances 0.000 description 1
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2010-112122 | 2010-05-14 | ||
JP2010112122A JP5557595B2 (ja) | 2010-05-14 | 2010-05-14 | 電子デバイスの製造方法、薄膜トランジスタ、電気光学装置及びセンサー |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110126038A KR20110126038A (ko) | 2011-11-22 |
KR101805190B1 true KR101805190B1 (ko) | 2017-12-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020110040644A KR101805190B1 (ko) | 2010-05-14 | 2011-04-29 | 전자 디바이스의 제조 방법, 박막 트랜지스터, 전기 광학 장치 및 센서 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5557595B2 (ja) |
KR (1) | KR101805190B1 (ja) |
TW (1) | TWI495738B (ja) |
Families Citing this family (2)
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JP6062552B2 (ja) | 2014-03-17 | 2017-01-18 | 株式会社東芝 | 不揮発性記憶装置 |
JP7003661B2 (ja) * | 2015-08-19 | 2022-01-20 | ソニーグループ株式会社 | 絶縁材料、電子デバイス及び撮像装置、並びに、電子デバイスの製造方法及び絶縁材料の成膜方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073701A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | アモルファス酸化物層を用いた薄膜トランジスタ |
JP2010062229A (ja) * | 2008-09-01 | 2010-03-18 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及び薄膜トランジスタの作製方法 |
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US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
AU2005302963B2 (en) * | 2004-11-10 | 2009-07-02 | Cannon Kabushiki Kaisha | Light-emitting device |
JP2007056329A (ja) * | 2005-08-25 | 2007-03-08 | Konica Minolta Holdings Inc | 透明導電膜及びその形成方法 |
JP4958253B2 (ja) * | 2005-09-02 | 2012-06-20 | 財団法人高知県産業振興センター | 薄膜トランジスタ |
EP2051287A4 (en) * | 2006-08-10 | 2014-05-21 | Ulvac Inc | METHOD FOR FORMING A CONDUCTIVE FILM, THIN FILM TRANSISTOR, PANEL WITH THIN FILM TRANSISTOR AND METHOD FOR PRODUCING A THIN FILM TRANSISTOR |
JP4727684B2 (ja) * | 2007-03-27 | 2011-07-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
JP5489423B2 (ja) * | 2007-09-21 | 2014-05-14 | 富士フイルム株式会社 | 放射線撮像素子 |
TWI500160B (zh) * | 2008-08-08 | 2015-09-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
KR101273143B1 (ko) * | 2008-08-29 | 2013-06-17 | 가부시키가이샤 아루박 | 전계 효과형 트랜지스터의 제조 방법 및 제조 장치 |
-
2010
- 2010-05-14 JP JP2010112122A patent/JP5557595B2/ja active Active
-
2011
- 2011-04-29 KR KR1020110040644A patent/KR101805190B1/ko active IP Right Grant
- 2011-05-05 TW TW100115688A patent/TWI495738B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073701A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | アモルファス酸化物層を用いた薄膜トランジスタ |
JP2010062229A (ja) * | 2008-09-01 | 2010-03-18 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及び薄膜トランジスタの作製方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201231695A (en) | 2012-08-01 |
JP2011243631A (ja) | 2011-12-01 |
JP5557595B2 (ja) | 2014-07-23 |
KR20110126038A (ko) | 2011-11-22 |
TWI495738B (zh) | 2015-08-11 |
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