KR101802580B1 - 에칭 방법 및 기억 매체 - Google Patents

에칭 방법 및 기억 매체 Download PDF

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Publication number
KR101802580B1
KR101802580B1 KR1020150088197A KR20150088197A KR101802580B1 KR 101802580 B1 KR101802580 B1 KR 101802580B1 KR 1020150088197 A KR1020150088197 A KR 1020150088197A KR 20150088197 A KR20150088197 A KR 20150088197A KR 101802580 B1 KR101802580 B1 KR 101802580B1
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South Korea
Prior art keywords
gas
chamber
etching
film
wafer
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KR1020150088197A
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English (en)
Korean (ko)
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KR20160001656A (ko
Inventor
사토시 도다
노부히로 다카하시
히로유키 다카하시
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도쿄엘렉트론가부시키가이샤
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Publication of KR20160001656A publication Critical patent/KR20160001656A/ko
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    • H01L21/31055—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Program-control systems
    • G05B19/02—Program-control systems electric
    • G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of program data in numerical form
    • G05B19/182—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of program data in numerical form characterised by the machine tool function, e.g. thread cutting, cam making, tool direction control
    • H01L21/30604—
    • H01L21/311—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020150088197A 2014-06-27 2015-06-22 에칭 방법 및 기억 매체 Active KR101802580B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-132482 2014-06-27
JP2014132482A JP2016012609A (ja) 2014-06-27 2014-06-27 エッチング方法

Publications (2)

Publication Number Publication Date
KR20160001656A KR20160001656A (ko) 2016-01-06
KR101802580B1 true KR101802580B1 (ko) 2017-11-28

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Family Applications (1)

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KR1020150088197A Active KR101802580B1 (ko) 2014-06-27 2015-06-22 에칭 방법 및 기억 매체

Country Status (4)

Country Link
US (1) US20150380268A1 (https=)
JP (1) JP2016012609A (https=)
KR (1) KR101802580B1 (https=)
TW (1) TWI648790B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017176027A1 (ko) * 2016-04-05 2017-10-12 주식회사 테스 실리콘산화막의 선택적 식각 방법
CN108251895A (zh) * 2016-12-29 2018-07-06 江苏鲁汶仪器有限公司 一种氟化氢气相腐蚀设备及方法
WO2018220973A1 (ja) * 2017-05-30 2018-12-06 東京エレクトロン株式会社 エッチング方法
CN108847391B (zh) * 2018-06-01 2021-06-08 北京北方华创微电子装备有限公司 一种非等离子干法刻蚀方法
JP7204348B2 (ja) * 2018-06-08 2023-01-16 東京エレクトロン株式会社 エッチング方法およびエッチング装置
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
CN115668463A (zh) * 2020-04-01 2023-01-31 朗姆研究公司 半导体材料的选择性精确蚀刻
CN113785382B (zh) * 2020-04-10 2023-10-27 株式会社日立高新技术 蚀刻方法
US12568781B2 (en) 2021-01-25 2026-03-03 Lam Research Corporation Selective silicon trim by thermal etching
CN116034454A (zh) * 2021-04-28 2023-04-28 东京毅力科创株式会社 蚀刻方法

Citations (4)

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JP2002050609A (ja) 2000-08-01 2002-02-15 Asm Japan Kk 半導体基板の処理方法
JP2003031548A (ja) * 2001-07-13 2003-01-31 M Fsi Kk 基板表面の処理方法
JP2006167849A (ja) 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
US20060207968A1 (en) * 2005-03-08 2006-09-21 Mumbauer Paul D Selective etching of oxides from substrates

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JPH088231B2 (ja) * 1989-10-02 1996-01-29 大日本スクリーン製造株式会社 絶縁膜の選択的除去方法
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US7025831B1 (en) * 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
JP4833512B2 (ja) 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
JP2005302897A (ja) * 2004-04-08 2005-10-27 Sony Corp ハードエッチングマスクの除去方法および半導体装置の製造方法
JP4105656B2 (ja) * 2004-05-13 2008-06-25 株式会社東芝 半導体装置及びその製造方法
KR20080059429A (ko) * 2005-10-05 2008-06-27 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 게이트 스페이서 산화물 재료를 선택적으로 에칭하기 위한조성물 및 방법
JP5084250B2 (ja) 2006-12-26 2012-11-28 東京エレクトロン株式会社 ガス処理装置およびガス処理方法ならびに記憶媒体
JP4982457B2 (ja) * 2008-09-11 2012-07-25 信越化学工業株式会社 パターン形成方法
JP2012043919A (ja) * 2010-08-18 2012-03-01 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
JP2012117144A (ja) * 2010-11-30 2012-06-21 Imec 正確に制御されたマスク陽極酸化のための方法
WO2012078139A1 (en) * 2010-12-07 2012-06-14 Primaxx, Inc. Process for manufacturing electro-mechanical systems
JP5914010B2 (ja) * 2012-01-30 2016-05-11 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP6040609B2 (ja) * 2012-07-20 2016-12-07 東京エレクトロン株式会社 成膜装置及び成膜方法
CN103435002A (zh) * 2013-08-05 2013-12-11 中航（重庆）微电子有限公司 Mems牺牲层刻蚀方法
JP2016025195A (ja) * 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
JP6494226B2 (ja) * 2014-09-16 2019-04-03 東京エレクトロン株式会社 エッチング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050609A (ja) 2000-08-01 2002-02-15 Asm Japan Kk 半導体基板の処理方法
JP2003031548A (ja) * 2001-07-13 2003-01-31 M Fsi Kk 基板表面の処理方法
JP2006167849A (ja) 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
US20060207968A1 (en) * 2005-03-08 2006-09-21 Mumbauer Paul D Selective etching of oxides from substrates

Also Published As

Publication number Publication date
US20150380268A1 (en) 2015-12-31
JP2016012609A (ja) 2016-01-21
TWI648790B (zh) 2019-01-21
KR20160001656A (ko) 2016-01-06
TW201612976A (en) 2016-04-01

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