KR101801693B1 - 저밀도 폴리싱 패드 - Google Patents

저밀도 폴리싱 패드 Download PDF

Info

Publication number
KR101801693B1
KR101801693B1 KR1020167002464A KR20167002464A KR101801693B1 KR 101801693 B1 KR101801693 B1 KR 101801693B1 KR 1020167002464 A KR1020167002464 A KR 1020167002464A KR 20167002464 A KR20167002464 A KR 20167002464A KR 101801693 B1 KR101801693 B1 KR 101801693B1
Authority
KR
South Korea
Prior art keywords
delete delete
trace elements
polishing pad
polishing
closed cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167002464A
Other languages
English (en)
Korean (ko)
Other versions
KR20160027075A (ko
Inventor
핑 후앙
윌리엄 씨 앨리슨
리차드 프렌?
리차드 프렌?f
폴 안드레 레페브레
로버트 커프리치
다이안 스코트
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐보트 마이크로일렉트로닉스 코포레이션 filed Critical 캐보트 마이크로일렉트로닉스 코포레이션
Publication of KR20160027075A publication Critical patent/KR20160027075A/ko
Application granted granted Critical
Publication of KR101801693B1 publication Critical patent/KR101801693B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/04Zonally-graded surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001Manufacture of flexible abrasive materials
    • B24D11/005Making abrasive webs
    • B24D11/006Making abrasive webs without embedded abrasive particles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/069Polyurethane

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
KR1020167002464A 2013-07-31 2014-07-17 저밀도 폴리싱 패드 Active KR101801693B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/955,398 US20150038066A1 (en) 2013-07-31 2013-07-31 Low density polishing pad
US13/955,398 2013-07-31
PCT/US2014/047065 WO2015017138A1 (en) 2013-07-31 2014-07-17 Low density polishing pad

Publications (2)

Publication Number Publication Date
KR20160027075A KR20160027075A (ko) 2016-03-09
KR101801693B1 true KR101801693B1 (ko) 2017-11-27

Family

ID=51263570

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167002464A Active KR101801693B1 (ko) 2013-07-31 2014-07-17 저밀도 폴리싱 패드

Country Status (8)

Country Link
US (1) US20150038066A1 (enExample)
EP (1) EP3027363B1 (enExample)
JP (3) JP6517802B2 (enExample)
KR (1) KR101801693B1 (enExample)
CN (1) CN105408063B (enExample)
SG (1) SG11201600242PA (enExample)
TW (1) TWI579106B (enExample)
WO (1) WO2015017138A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102884111B1 (ko) 2023-04-25 2025-11-17 주식회사 브러쉬텍 씨엠피용 패드 컨디셔닝 디스크 및 그 제조방법

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US9586304B2 (en) * 2014-12-19 2017-03-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-expansion CMP PAD casting method
US10005172B2 (en) * 2015-06-26 2018-06-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-porosity method for forming polishing pad
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
CN113146464A (zh) 2016-01-19 2021-07-23 应用材料公司 多孔化学机械抛光垫
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
JP7148226B2 (ja) 2016-09-21 2022-10-05 東友ファインケム株式会社 赤色硬化性樹脂組成物
US10596763B2 (en) 2017-04-21 2020-03-24 Applied Materials, Inc. Additive manufacturing with array of energy sources
US20180345449A1 (en) * 2017-06-06 2018-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pads for improved removal rate and planarization
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
KR101949905B1 (ko) 2017-08-23 2019-02-19 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
JP7273796B2 (ja) * 2017-08-25 2023-05-15 スリーエム イノベイティブ プロパティズ カンパニー 表面突起研磨パッド
CN109689299A (zh) 2017-09-11 2019-04-26 Skc株式会社 多孔聚氨酯抛光垫及其制备方法
KR102088919B1 (ko) 2017-09-11 2020-03-13 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
KR101949911B1 (ko) 2017-09-11 2019-02-19 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
KR102054309B1 (ko) 2018-04-17 2019-12-10 에스케이씨 주식회사 다공성 연마 패드 및 이의 제조방법
KR102058877B1 (ko) 2018-04-20 2019-12-24 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
KR102185265B1 (ko) 2018-12-26 2020-12-01 에스케이씨 주식회사 연마패드용 조성물, 연마패드 및 이의 제조방법
KR102202076B1 (ko) 2018-12-26 2021-01-12 에스케이씨 주식회사 연마패드용 조성물, 연마패드 및 이의 제조방법
TWI735101B (zh) 2018-12-26 2021-08-01 南韓商Skc索密思股份有限公司 用於研磨墊之組成物、研磨墊及用於製備其之方法
KR102283399B1 (ko) 2018-12-26 2021-07-30 에스케이씨솔믹스 주식회사 연마패드용 조성물, 연마패드 및 이의 제조방법
KR20200079865A (ko) 2018-12-26 2020-07-06 에스케이씨 주식회사 연마패드용 조성물, 연마패드 및 이의 제조방법
KR20200079847A (ko) 2018-12-26 2020-07-06 에스케이씨 주식회사 연마패드용 조성물, 연마패드 및 이의 제조방법
KR102174958B1 (ko) 2019-03-27 2020-11-05 에스케이씨 주식회사 결함 발생을 최소화시키는 연마패드 및 이의 제조방법
KR102277418B1 (ko) 2019-05-21 2021-07-14 에스케이씨솔믹스 주식회사 가교 밀도가 향상된 연마패드 및 이의 제조방법
KR102237367B1 (ko) 2019-06-17 2021-04-07 에스케이씨솔믹스 주식회사 연마패드용 조성물, 연마패드 및 반도체 소자의 제조방법
US11207757B2 (en) 2019-06-17 2021-12-28 Skc Solmics Co., Ltd. Composition for polishing pad, polishing pad and preparation method of semiconductor device
KR102237362B1 (ko) 2019-06-17 2021-04-07 에스케이씨솔믹스 주식회사 연마패드용 조성물, 연마패드 및 반도체 소자의 제조방법
KR102237357B1 (ko) 2019-06-17 2021-04-07 에스케이씨솔믹스 주식회사 연마패드용 조성물, 연마패드 및 반도체 소자의 제조방법
KR102237351B1 (ko) 2019-06-17 2021-04-07 에스케이씨솔믹스 주식회사 연마패드용 조성물, 연마패드 및 반도체 소자의 제조방법
KR102197481B1 (ko) 2019-06-27 2020-12-31 에스케이씨 주식회사 연마패드 및 이의 제조방법
KR102273097B1 (ko) 2019-10-23 2021-07-05 에스케이씨솔믹스 주식회사 연마패드용 조성물, 연마패드 및 이의 제조방법
KR102188525B1 (ko) 2019-10-29 2020-12-08 에스케이씨 주식회사 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법
KR102304965B1 (ko) 2019-10-30 2021-09-24 에스케이씨솔믹스 주식회사 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법
TWI741753B (zh) 2019-10-29 2021-10-01 南韓商Skc索密思股份有限公司 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法
KR102287923B1 (ko) 2019-10-30 2021-08-09 에스케이씨솔믹스 주식회사 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법
KR102287235B1 (ko) 2019-10-30 2021-08-06 에스케이씨솔믹스 주식회사 가교도가 조절된 연마패드 및 이의 제조방법
KR102298114B1 (ko) 2019-11-05 2021-09-03 에스케이씨솔믹스 주식회사 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법
KR102300038B1 (ko) 2019-11-15 2021-09-08 에스케이씨솔믹스 주식회사 연마패드로부터 재생된 폴리올 조성물 및 이의 제조방법
KR102300050B1 (ko) 2019-11-15 2021-09-08 에스케이씨솔믹스 주식회사 연마패드로부터 재생된 폴리올 및 이의 제조방법
KR102298111B1 (ko) 2019-11-15 2021-09-03 에스케이씨솔믹스 주식회사 재생 폴리올을 포함하는 폴리우레탄 연마패드 및 이의 제조방법
KR102293765B1 (ko) 2019-11-21 2021-08-26 에스케이씨솔믹스 주식회사 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법
KR102177748B1 (ko) 2019-11-28 2020-11-11 에스케이씨 주식회사 다공성 연마 패드 및 이의 제조방법
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
JP7576396B2 (ja) * 2020-01-20 2024-10-31 ニッタ・デュポン株式会社 研磨パッド
US11667061B2 (en) * 2020-04-18 2023-06-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming leveraged poromeric polishing pad
US11806829B2 (en) * 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
KR20200105465A (ko) 2020-08-28 2020-09-07 에스케이씨 주식회사 연마패드용 조성물, 연마패드 및 이의 제조방법
KR20200105790A (ko) 2020-09-01 2020-09-09 에스케이씨 주식회사 연마패드용 조성물, 연마패드 및 이의 제조방법
CN112091817B (zh) * 2020-09-08 2022-06-17 中国航发贵州黎阳航空动力有限公司 一种薄壁环形零件端面研磨工具
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN120051356A (zh) * 2022-09-22 2025-05-27 Cmc材料有限责任公司 具有二硫键的化学机械抛光垫
KR102731712B1 (ko) 2023-04-14 2024-11-19 에스케이엔펄스 주식회사 염소 함량이 조절된 연마패드 및 이를 이용한 반도체 소자의 제조방법
KR102889774B1 (ko) 2023-11-06 2025-11-24 엔펄스 주식회사 결함 발생이 감소된 연마패드 및 이를 이용한 반도체 소자의 제조방법
KR102741574B1 (ko) 2023-07-26 2024-12-12 에스케이엔펄스 주식회사 결함 발생이 저감된 연마패드 및 이를 이용한 반도체 소자의 제조방법
US20250033160A1 (en) 2023-07-26 2025-01-30 Sk Enpulse Co., Ltd. Polishing pad with reduced defect and method of preparing a semiconductor device using the same
KR20250066238A (ko) 2023-11-06 2025-05-13 엔펄스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조 방법
TW202531364A (zh) 2023-11-06 2025-08-01 南韓商Sk恩普士股份有限公司 拋光墊及使用其來製備半導體裝置的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120094586A1 (en) * 2010-10-15 2012-04-19 Ping Huang Polishing pad with multi-modal distribution of pore diameters
JP5117147B2 (ja) * 2007-09-11 2013-01-09 富士紡ホールディングス株式会社 研磨パッドおよび研磨パッドの製造方法
JP2013089767A (ja) * 2011-10-18 2013-05-13 Fujibo Holdings Inc 研磨パッド及びその製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885312A (en) * 1997-06-17 1999-03-23 Speedfam Corporation Grinding composition using abrasive particles on bubbles
US6231942B1 (en) * 1998-01-21 2001-05-15 Trexel, Inc. Method and apparatus for microcellular polypropylene extrusion, and polypropylene articles produced thereby
TWI228522B (en) * 1999-06-04 2005-03-01 Fuji Spinning Co Ltd Urethane molded products for polishing pad and method for making same
US6368200B1 (en) * 2000-03-02 2002-04-09 Agere Systems Guardian Corporation Polishing pads from closed-cell elastomer foam
US20020016139A1 (en) * 2000-07-25 2002-02-07 Kazuto Hirokawa Polishing tool and manufacturing method therefor
US8062098B2 (en) * 2000-11-17 2011-11-22 Duescher Wayne O High speed flat lapping platen
WO2003066284A1 (en) * 2002-02-06 2003-08-14 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing with an eddy current monitoring system
US6841221B2 (en) * 2002-02-20 2005-01-11 Congoleum Corporation Heat activated coating texture
CN100551623C (zh) * 2003-01-10 2009-10-21 3M创新有限公司 应用于化学机械平面化的垫结构
US6960120B2 (en) * 2003-02-10 2005-11-01 Cabot Microelectronics Corporation CMP pad with composite transparent window
JP2004345014A (ja) * 2003-05-21 2004-12-09 Hitachi Chem Co Ltd 研磨用パッドとそれを用いた研磨方法
US20050017122A1 (en) * 2003-07-23 2005-01-27 Conitex-Sonoco Llc Apparatus and method for forming enlarged base on yarn carrier, and yarn carrier with enlarged base
US7074115B2 (en) * 2003-10-09 2006-07-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad
JP2006128563A (ja) * 2004-11-01 2006-05-18 Toyo Tire & Rubber Co Ltd 半導体ウエハ研磨用研磨パッドおよび半導体デバイスの製造方法
EP1704965A1 (de) * 2005-03-24 2006-09-27 Solvay Fluor GmbH Schleifmittelzusatz
JP4986129B2 (ja) * 2007-01-15 2012-07-25 東洋ゴム工業株式会社 研磨パッド
CN101990483B (zh) * 2008-04-01 2013-10-16 音诺帕德股份有限公司 具有经控制的孔隙形态的抛光垫
EP2182024A3 (en) * 2008-10-30 2011-04-20 Rohm and Haas Company Flexible acrylic foam composition
JP5393434B2 (ja) * 2008-12-26 2014-01-22 東洋ゴム工業株式会社 研磨パッド及びその製造方法
JP5521243B2 (ja) * 2009-07-03 2014-06-11 日本発條株式会社 研磨保持用パッド
US20120009458A1 (en) * 2010-07-12 2012-01-12 Wu Donald P H Connecting structure for exteriorly connecting a battery cell and a load
US20120302148A1 (en) * 2011-05-23 2012-11-29 Rajeev Bajaj Polishing pad with homogeneous body having discrete protrusions thereon
JP5738731B2 (ja) * 2011-09-22 2015-06-24 東洋ゴム工業株式会社 研磨パッド

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5117147B2 (ja) * 2007-09-11 2013-01-09 富士紡ホールディングス株式会社 研磨パッドおよび研磨パッドの製造方法
US20120094586A1 (en) * 2010-10-15 2012-04-19 Ping Huang Polishing pad with multi-modal distribution of pore diameters
JP2013089767A (ja) * 2011-10-18 2013-05-13 Fujibo Holdings Inc 研磨パッド及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102884111B1 (ko) 2023-04-25 2025-11-17 주식회사 브러쉬텍 씨엠피용 패드 컨디셔닝 디스크 및 그 제조방법

Also Published As

Publication number Publication date
JP6517802B2 (ja) 2019-05-22
JP2017042910A (ja) 2017-03-02
CN105408063B (zh) 2018-01-30
KR20160027075A (ko) 2016-03-09
JP2016525459A (ja) 2016-08-25
SG11201600242PA (en) 2016-02-26
EP3027363B1 (en) 2020-01-15
JP6415521B2 (ja) 2018-10-31
JP2019077036A (ja) 2019-05-23
EP3027363A1 (en) 2016-06-08
TW201509595A (zh) 2015-03-16
US20150038066A1 (en) 2015-02-05
TWI579106B (zh) 2017-04-21
CN105408063A (zh) 2016-03-16
WO2015017138A1 (en) 2015-02-05

Similar Documents

Publication Publication Date Title
KR101801693B1 (ko) 저밀도 폴리싱 패드
EP3250343B1 (en) Low density polishing pad
KR102391135B1 (ko) 액체 충전제를 갖는 포로겐을 갖는 연마 패드
KR101735567B1 (ko) 연속적인 돌출부를 가진 폴리싱면을 가지고 있는 폴리싱 패드
KR101619100B1 (ko) 구멍을 가진 폴리싱 패드
KR20130110216A (ko) 동심형 또는 대략 동심형의 다각형 홈 패턴을 가진 폴리싱 패드
JP5868566B2 (ja) 研磨パッド

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

Patent event date: 20160128

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20160818

Patent event code: PE09021S01D

AMND Amendment
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20170809

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20170926

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20170228

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20160818

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20170926

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20161018

Comment text: Amendment to Specification, etc.

PX0701 Decision of registration after re-examination

Patent event date: 20171107

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20171019

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20170926

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20161018

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20171121

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20171122

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20210929

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20220921

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20231023

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20241029

Start annual number: 8

End annual number: 8