KR101797233B1 - 임프린트 방법과 이것에 사용하는 전사 기재 및 밀착제 - Google Patents

임프린트 방법과 이것에 사용하는 전사 기재 및 밀착제 Download PDF

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KR101797233B1
KR101797233B1 KR1020137008150A KR20137008150A KR101797233B1 KR 101797233 B1 KR101797233 B1 KR 101797233B1 KR 1020137008150 A KR1020137008150 A KR 1020137008150A KR 20137008150 A KR20137008150 A KR 20137008150A KR 101797233 B1 KR101797233 B1 KR 101797233B1
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South Korea
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substrate
transfer
adhesion layer
group
mold
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KR20130123376A (ko
Inventor
야스히로 오오카와
아키코 아마노
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다이니폰 인사츠 가부시키가이샤
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/005—Surface shaping of articles, e.g. embossing; Apparatus therefor characterised by the choice of material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020137008150A 2010-10-21 2011-10-07 임프린트 방법과 이것에 사용하는 전사 기재 및 밀착제 Active KR101797233B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010236181A JP5218521B2 (ja) 2010-10-21 2010-10-21 インプリント方法とこれに用いる転写基材および密着剤
JPJP-P-2010-236181 2010-10-21
PCT/JP2011/073751 WO2012053458A1 (ja) 2010-10-21 2011-10-07 インプリント方法とこれに用いる転写基材および密着剤

Publications (2)

Publication Number Publication Date
KR20130123376A KR20130123376A (ko) 2013-11-12
KR101797233B1 true KR101797233B1 (ko) 2017-11-13

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KR1020137008150A Active KR101797233B1 (ko) 2010-10-21 2011-10-07 임프린트 방법과 이것에 사용하는 전사 기재 및 밀착제

Country Status (4)

Country Link
US (1) US9375871B2 (enExample)
JP (1) JP5218521B2 (enExample)
KR (1) KR101797233B1 (enExample)
WO (1) WO2012053458A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014093385A (ja) * 2012-11-02 2014-05-19 Fujifilm Corp インプリント用密着膜の製造方法およびパターン形成方法
JP2015028978A (ja) * 2013-07-30 2015-02-12 大日本印刷株式会社 異物検出方法、インプリント方法及びインプリントシステム
JP6244742B2 (ja) * 2013-08-26 2017-12-13 大日本印刷株式会社 膜検査方法、インプリント方法、パターン構造体の製造方法、インプリント用のモールド、インプリント用の転写基板、および、インプリント装置
WO2016006190A1 (en) 2014-07-08 2016-01-14 Canon Kabushiki Kaisha Adhesion layer composition, method for forming film by nanoimprinting, methods for manufacturing optical component, circuit board and electronic apparatus
JP6712673B2 (ja) * 2017-02-28 2020-06-24 富士フイルム株式会社 インプリント用密着膜形成用組成物、密着膜、積層体、硬化物パターンの製造方法および回路基板の製造方法
TW201900704A (zh) * 2017-04-11 2019-01-01 日商富士軟片股份有限公司 組成物、密接膜、積層體、硬化物圖案之製造方法及電路基板之製造方法
EP3929658A1 (en) * 2020-06-23 2021-12-29 Koninklijke Philips N.V. Imprinting method and patterned layer

Family Cites Families (22)

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JP2938722B2 (ja) * 1993-07-12 1999-08-25 信越化学工業株式会社 アクリル官能性シラン化合物の重合禁止剤
US5908530A (en) * 1995-05-18 1999-06-01 Obsidian, Inc. Apparatus for chemical mechanical polishing
KR100396469B1 (ko) * 2001-06-29 2003-09-02 삼성전자주식회사 반도체 장치의 게이트 전극 형성 방법 및 이를 이용한불휘발성 메모리 장치의 제조방법
US6899596B2 (en) * 2002-02-22 2005-05-31 Agere Systems, Inc. Chemical mechanical polishing of dual orientation polycrystalline materials
JP4154595B2 (ja) 2003-05-28 2008-09-24 ダイキン工業株式会社 インプリント加工用金型およびその製造方法
US7635263B2 (en) * 2005-01-31 2009-12-22 Molecular Imprints, Inc. Chucking system comprising an array of fluid chambers
JP2006255811A (ja) * 2005-03-15 2006-09-28 National Institute For Materials Science 単分子膜の形成方法
US7759407B2 (en) 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8846195B2 (en) 2005-07-22 2014-09-30 Canon Nanotechnologies, Inc. Ultra-thin polymeric adhesion layer
US8808808B2 (en) * 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US7766640B2 (en) * 2005-08-12 2010-08-03 Hewlett-Packard Development Company, L.P. Contact lithography apparatus, system and method
JP4287421B2 (ja) * 2005-10-13 2009-07-01 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2007144995A (ja) 2005-10-25 2007-06-14 Dainippon Printing Co Ltd 光硬化ナノインプリント用モールド及びその製造方法
WO2008010499A1 (en) * 2006-07-18 2008-01-24 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, method for producing the same, and chemical mechanical polishing method
US7768628B2 (en) * 2006-10-12 2010-08-03 Hewlett-Packard Development Company, L.P. Contact lithography apparatus and method
JP4940884B2 (ja) * 2006-10-17 2012-05-30 大日本印刷株式会社 パターン形成体の製造方法
JP5037243B2 (ja) 2007-07-06 2012-09-26 富士フイルム株式会社 界面結合剤、該界面結合剤を含有するレジスト組成物、及び該界面結合剤からなる層を有する磁気記録媒体形成用積層体、並びに該界面結合剤を用いた磁気記録媒体の製造方法、及び該製造方法により製造された磁気記録媒体
JP5374949B2 (ja) * 2007-08-21 2013-12-25 信越化学工業株式会社 放射線重合性官能基含有オルガノシリルアミンの製造方法及び放射線重合性官能基含有オルガノシリルアミン
US20100052216A1 (en) * 2008-08-29 2010-03-04 Yong Hyup Kim Nano imprint lithography using an elastic roller
US20100252103A1 (en) * 2009-04-03 2010-10-07 Chiu-Lin Yao Photoelectronic element having a transparent adhesion structure and the manufacturing method thereof
WO2011013630A1 (ja) * 2009-07-29 2011-02-03 日産化学工業株式会社 ナノインプリント用レジスト下層膜形成組成物

Also Published As

Publication number Publication date
US9375871B2 (en) 2016-06-28
JP5218521B2 (ja) 2013-06-26
JP2012086484A (ja) 2012-05-10
US20130270741A1 (en) 2013-10-17
WO2012053458A1 (ja) 2012-04-26
KR20130123376A (ko) 2013-11-12

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