KR101784045B1 - 노광 장치 및 물품의 제조 방법 - Google Patents

노광 장치 및 물품의 제조 방법 Download PDF

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Publication number
KR101784045B1
KR101784045B1 KR1020140069354A KR20140069354A KR101784045B1 KR 101784045 B1 KR101784045 B1 KR 101784045B1 KR 1020140069354 A KR1020140069354 A KR 1020140069354A KR 20140069354 A KR20140069354 A KR 20140069354A KR 101784045 B1 KR101784045 B1 KR 101784045B1
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South Korea
Prior art keywords
exposure
shot area
substrate
substrate stage
shot
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English (en)
Korean (ko)
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KR20140144145A (ko
Inventor
사토루 이토
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캐논 가부시끼가이샤
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Publication of KR20140144145A publication Critical patent/KR20140144145A/ko
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Publication of KR101784045B1 publication Critical patent/KR101784045B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F2009/005—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020140069354A 2013-06-10 2014-06-09 노광 장치 및 물품의 제조 방법 Active KR101784045B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-122024 2013-06-10
JP2013122024A JP5986538B2 (ja) 2013-06-10 2013-06-10 露光装置および物品の製造方法

Publications (2)

Publication Number Publication Date
KR20140144145A KR20140144145A (ko) 2014-12-18
KR101784045B1 true KR101784045B1 (ko) 2017-10-10

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ID=52005226

Family Applications (1)

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KR1020140069354A Active KR101784045B1 (ko) 2013-06-10 2014-06-09 노광 장치 및 물품의 제조 방법

Country Status (4)

Country Link
US (1) US9557657B2 (enExample)
JP (1) JP5986538B2 (enExample)
KR (1) KR101784045B1 (enExample)
CN (2) CN106444300B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111345031B (zh) * 2019-04-25 2021-10-15 深圳市大疆创新科技有限公司 无人机及其拍摄控制方法
JP7466403B2 (ja) 2020-08-03 2024-04-12 キヤノン株式会社 制御装置、リソグラフィー装置、制御方法および物品製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236447B1 (en) 1997-08-29 2001-05-22 Canon Kabushiki Kaisha Exposure method and apparatus, and semiconductor device manufactured using the method
JP2012134557A (ja) 2005-04-28 2012-07-12 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343270A (en) * 1990-10-30 1994-08-30 Nikon Corporation Projection exposure apparatus
JPH06260384A (ja) * 1993-03-08 1994-09-16 Nikon Corp 露光量制御方法
US5617182A (en) * 1993-11-22 1997-04-01 Nikon Corporation Scanning exposure method
US6118515A (en) * 1993-12-08 2000-09-12 Nikon Corporation Scanning exposure method
JP3451604B2 (ja) * 1994-06-17 2003-09-29 株式会社ニコン 走査型露光装置
JPH0992611A (ja) * 1995-09-21 1997-04-04 Canon Inc 走査型露光装置および方法
JPH09115825A (ja) * 1995-10-19 1997-05-02 Nikon Corp 走査型投影露光装置
JP3514401B2 (ja) 1996-01-16 2004-03-31 キヤノン株式会社 走査型露光装置および方法ならびに半導体デバイスの製造方法
JP3728610B2 (ja) * 1996-07-04 2005-12-21 株式会社ニコン 走査型露光装置及び露光方法
US6646715B1 (en) * 1997-01-14 2003-11-11 Nikon Corporation Scanning exposure apparatus and method with run-up distance control
JPH11204421A (ja) * 1998-01-09 1999-07-30 Nikon Corp 露光装置の制御方法、露光装置、露光方法及び素子製造方法
US6285438B1 (en) * 1999-05-19 2001-09-04 Nikon Corporation Scanning exposure method with reduced time between scans
JP4585649B2 (ja) * 2000-05-19 2010-11-24 キヤノン株式会社 露光装置およびデバイス製造方法
JP2002110526A (ja) * 2000-10-03 2002-04-12 Canon Inc 走査露光方法及び走査露光装置
KR100585108B1 (ko) * 2003-11-14 2006-06-01 삼성전자주식회사 스캔 방식의 노광 장치를 이용한 웨이퍼 노광 방법
JP4625673B2 (ja) * 2004-10-15 2011-02-02 株式会社東芝 露光方法及び露光装置
US8330936B2 (en) * 2006-09-20 2012-12-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009010202A (ja) * 2007-06-28 2009-01-15 Canon Inc 露光方法、露光装置およびデバイス製造方法
JP5489534B2 (ja) * 2009-05-21 2014-05-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP5498243B2 (ja) 2010-05-07 2014-05-21 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法
JP5406861B2 (ja) * 2011-01-01 2014-02-05 キヤノン株式会社 露光装置及びデバイス製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236447B1 (en) 1997-08-29 2001-05-22 Canon Kabushiki Kaisha Exposure method and apparatus, and semiconductor device manufactured using the method
JP2012134557A (ja) 2005-04-28 2012-07-12 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法

Also Published As

Publication number Publication date
CN104238278A (zh) 2014-12-24
JP5986538B2 (ja) 2016-09-06
US9557657B2 (en) 2017-01-31
JP2014239193A (ja) 2014-12-18
CN104238278B (zh) 2017-01-11
CN106444300B (zh) 2018-08-14
KR20140144145A (ko) 2014-12-18
US20140362357A1 (en) 2014-12-11
CN106444300A (zh) 2017-02-22

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