KR101757924B1 - 기판의 재생 방법, 마스크 블랭크의 제조 방법, 다층 반사막을 갖는 기판의 제조 방법, 및 반사형 마스크 블랭크의 제조 방법 - Google Patents

기판의 재생 방법, 마스크 블랭크의 제조 방법, 다층 반사막을 갖는 기판의 제조 방법, 및 반사형 마스크 블랭크의 제조 방법 Download PDF

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KR101757924B1
KR101757924B1 KR1020100114433A KR20100114433A KR101757924B1 KR 101757924 B1 KR101757924 B1 KR 101757924B1 KR 1020100114433 A KR1020100114433 A KR 1020100114433A KR 20100114433 A KR20100114433 A KR 20100114433A KR 101757924 B1 KR101757924 B1 KR 101757924B1
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substrate
film
mask blank
thin film
multilayer reflective
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KR20110055436A (ko
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마사히로 하시모또
오사무 노자와
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호야 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
KR1020100114433A 2009-11-18 2010-11-17 기판의 재생 방법, 마스크 블랭크의 제조 방법, 다층 반사막을 갖는 기판의 제조 방법, 및 반사형 마스크 블랭크의 제조 방법 Active KR101757924B1 (ko)

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JP2009263011 2009-11-18
JPJP-P-2009-263011 2009-11-18

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KR20110055436A KR20110055436A (ko) 2011-05-25
KR101757924B1 true KR101757924B1 (ko) 2017-07-13

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KR1020100114433A Active KR101757924B1 (ko) 2009-11-18 2010-11-17 기판의 재생 방법, 마스크 블랭크의 제조 방법, 다층 반사막을 갖는 기판의 제조 방법, 및 반사형 마스크 블랭크의 제조 방법

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JP (1) JP5677812B2 (enExample)
KR (1) KR101757924B1 (enExample)
CN (1) CN102109756B (enExample)
TW (1) TWI494682B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5627990B2 (ja) * 2010-10-25 2014-11-19 Hoya株式会社 インプリント用モールドの製造方法
JP5924901B2 (ja) * 2011-10-17 2016-05-25 Hoya株式会社 転写用マスクの製造方法
JP6460617B2 (ja) * 2012-02-10 2019-01-30 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法
JP6301127B2 (ja) * 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
CN104932194A (zh) * 2015-07-22 2015-09-23 京东方科技集团股份有限公司 一种掩膜板及其制备方法、掩膜板的回收方法
JP6716316B2 (ja) * 2016-03-30 2020-07-01 Hoya株式会社 多層膜付き基板の再生方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
CN115398347A (zh) * 2020-02-04 2022-11-25 朗姆研究公司 提高含金属euv抗蚀剂干式显影性能的涂敷/暴露后处理
US12436464B2 (en) 2020-04-03 2025-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance EUV lithographic performance
US12209046B2 (en) * 2020-05-13 2025-01-28 AGC Inc. Glass substrate for EUVL, manufacturing method thereof, mask blank for EUVL, and manufacturing method thereof
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
CN113458609A (zh) * 2021-05-27 2021-10-01 上海传芯半导体有限公司 再生掩模透光基板的处理方法及掩模基版的制造方法
JP7790431B2 (ja) * 2021-06-04 2025-12-23 Ａｇｃ株式会社 薬液、膜付き基板の再生方法、膜付き基板の製造方法、および反射型マスクブランクの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004335514A (ja) 2003-04-30 2004-11-25 Nikon Corp 多層膜反射マスク、その再生方法及び露光装置
JP2005191352A (ja) * 2003-12-26 2005-07-14 Hoya Corp 多層反射膜付き基板の再生方法、多層反射膜付き基板の製造方法及び反射型マスクブランクスの製造方法
JP2006146151A (ja) 2004-10-22 2006-06-08 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04280987A (ja) * 1991-03-06 1992-10-06 Central Glass Co Ltd クリーニング装置
JP2001091731A (ja) * 1999-09-27 2001-04-06 Ueyama Denki:Kk 樹脂遮光層を有するカラーフィルターガラス基板の再生方法
JP2002004052A (ja) * 2000-06-14 2002-01-09 Canon Inc 成膜装置のクリーニング方法及び堆積膜成膜方法
JP4158885B2 (ja) * 2002-04-22 2008-10-01 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法
WO2004061943A1 (en) * 2003-01-07 2004-07-22 S.O.I.Tec Silicon On Insulator Technologies Recycling by mechanical means of a wafer comprising a taking-off structure after taking-off a thin layer thereof
JP2006078825A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
TW200812715A (en) * 2006-09-01 2008-03-16 Kun-Huang Wu Method of surface treatment of recycled substrate and transparent substrate made by the same
JP4281773B2 (ja) * 2006-09-25 2009-06-17 ヤマハ株式会社 微細成形モールド及び微細成形モールドの再生方法
JP2008151916A (ja) * 2006-12-15 2008-07-03 Shin Etsu Chem Co Ltd 大型フォトマスク基板のリサイクル方法
JP5161017B2 (ja) * 2007-09-27 2013-03-13 Ｈｏｙａ株式会社 マスクブランク、マスクブランクの製造方法、及びインプリント用モールドの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004335514A (ja) 2003-04-30 2004-11-25 Nikon Corp 多層膜反射マスク、その再生方法及び露光装置
JP2005191352A (ja) * 2003-12-26 2005-07-14 Hoya Corp 多層反射膜付き基板の再生方法、多層反射膜付き基板の製造方法及び反射型マスクブランクスの製造方法
JP2006146151A (ja) 2004-10-22 2006-06-08 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法

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JP2011127221A (ja) 2011-06-30
JP5677812B2 (ja) 2015-02-25
TW201140230A (en) 2011-11-16
TWI494682B (zh) 2015-08-01
CN102109756B (zh) 2016-01-20
KR20110055436A (ko) 2011-05-25

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