KR101725810B1 - 감광성 수지 조성물, 이것을 사용한 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치 - Google Patents
감광성 수지 조성물, 이것을 사용한 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치 Download PDFInfo
- Publication number
- KR101725810B1 KR101725810B1 KR1020157006403A KR20157006403A KR101725810B1 KR 101725810 B1 KR101725810 B1 KR 101725810B1 KR 1020157006403 A KR1020157006403 A KR 1020157006403A KR 20157006403 A KR20157006403 A KR 20157006403A KR 101725810 B1 KR101725810 B1 KR 101725810B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- acid
- resin composition
- compound
- photosensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F20/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- H01L27/3258—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials For Photolithography (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2012-217499 | 2012-09-28 | ||
| JP2012217499 | 2012-09-28 | ||
| PCT/JP2013/074977 WO2014050627A1 (ja) | 2012-09-28 | 2013-09-17 | 感光性樹脂組成物、これを用いた硬化膜の製造方法、硬化膜、液晶表示装置および有機el表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150043440A KR20150043440A (ko) | 2015-04-22 |
| KR101725810B1 true KR101725810B1 (ko) | 2017-04-11 |
Family
ID=50388033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157006403A Expired - Fee Related KR101725810B1 (ko) | 2012-09-28 | 2013-09-17 | 감광성 수지 조성물, 이것을 사용한 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치 |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP5933734B2 (https=) |
| KR (1) | KR101725810B1 (https=) |
| CN (1) | CN104685416B (https=) |
| TW (1) | TW201415161A (https=) |
| WO (1) | WO2014050627A1 (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104460232B (zh) * | 2013-09-24 | 2019-11-15 | 住友化学株式会社 | 光致抗蚀剂组合物 |
| JP6318742B2 (ja) * | 2014-03-18 | 2018-05-09 | Jsr株式会社 | ポジ型感光性樹脂組成物 |
| JP6183268B2 (ja) * | 2014-03-28 | 2017-08-23 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
| JP6672801B2 (ja) * | 2015-04-09 | 2020-03-25 | Jsr株式会社 | 液晶配向剤 |
| TWI693470B (zh) * | 2015-06-30 | 2020-05-11 | 日商富士軟片股份有限公司 | 感光性樹脂組成物、硬化膜的製造方法、硬化膜及液晶顯示裝置 |
| JP6589763B2 (ja) * | 2015-08-04 | 2019-10-16 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト組成物及びパターン形成方法 |
| JP6809873B2 (ja) * | 2015-12-28 | 2021-01-06 | 旭化成株式会社 | 積層体 |
| KR102635564B1 (ko) * | 2016-05-03 | 2024-02-08 | 동우 화인켐 주식회사 | 포지티브형 감광성 수지 조성물 및 이로부터 제조된 절연막 |
| KR102654731B1 (ko) * | 2017-09-28 | 2024-04-03 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 및 그의 용도 |
| WO2019064961A1 (ja) * | 2017-09-29 | 2019-04-04 | 富士フイルム株式会社 | 感光性樹脂組成物、レジスト膜、パターン形成方法及び電子デバイスの製造方法 |
| US11230919B2 (en) | 2018-01-18 | 2022-01-25 | Saudi Arabian Oil Company | Tracers for petroleum reservoirs |
| CN112689800B (zh) | 2018-09-11 | 2024-07-30 | 住友电木株式会社 | 永久膜形成用感光性树脂组合物、固化膜、电子装置及其制造方法 |
| JP7495477B2 (ja) * | 2020-03-19 | 2024-06-04 | 富士フイルム株式会社 | 転写フィルム、感光性材料、パターン形成方法、回路基板の製造方法、タッチパネルの製造方法 |
| JP7407272B2 (ja) * | 2020-03-19 | 2023-12-28 | 富士フイルム株式会社 | 感光性材料、転写フィルム、回路配線の製造方法、タッチパネルの製造方法、パターン形成方法 |
| WO2021192058A1 (ja) * | 2020-03-24 | 2021-09-30 | 昭和電工マテリアルズ株式会社 | 感光性樹脂組成物、感光性エレメント、及び配線基板の製造方法 |
| JP7504659B2 (ja) * | 2020-05-18 | 2024-06-24 | 東京応化工業株式会社 | 化学増幅型感光性組成物、感光性ドライフィルム、パターン化されたレジスト膜の製造方法、めっき造形物の製造方法、化合物、及び化合物の製造方法 |
| CN114874238A (zh) * | 2021-02-01 | 2022-08-09 | 中国科学院理化技术研究所 | 一种基于噻二唑并[3,4-g]喹喔啉结构的光敏剂及其合成方法和应用 |
| EP4692940A1 (en) | 2023-03-30 | 2026-02-11 | Sumitomo Bakelite Co., Ltd. | Photosensitive resin composition, cured film, electronic device, and electronic device manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009288343A (ja) * | 2008-05-27 | 2009-12-10 | Fujifilm Corp | ポジ型レジスト組成物、及び該組成物を用いたパターン形成方法 |
| JP2011227449A (ja) * | 2010-01-19 | 2011-11-10 | Fujifilm Corp | 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機el表示装置、及び、液晶表示装置 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08240908A (ja) * | 1994-12-29 | 1996-09-17 | Tokyo Ohka Kogyo Co Ltd | 感光性樹脂組成物、それを用いた感光性平版印刷版、および平版印刷用版材の製造方法 |
| JP2004272182A (ja) * | 2002-04-24 | 2004-09-30 | Mitsubishi Chemicals Corp | 画像形成方法 |
| JP4683182B2 (ja) * | 2004-09-28 | 2011-05-11 | 山栄化学株式会社 | 感光性熱硬化性樹脂組成物、並びにレジスト被覆プリント配線板及びその製造法 |
| KR20070119671A (ko) * | 2005-03-11 | 2007-12-20 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 광형상화가능, 열경화가능 불화 레지스트 |
| JP5451570B2 (ja) | 2009-10-16 | 2014-03-26 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機el表示装置、及び、液晶表示装置 |
| TWI550338B (zh) * | 2010-08-30 | 2016-09-21 | 富士軟片股份有限公司 | 感光性樹脂組成物、肟基磺酸酯化合物、硬化膜之形成方法、硬化膜、有機el顯示裝置、及液晶顯示裝置 |
| JP5291744B2 (ja) * | 2010-11-02 | 2013-09-18 | 富士フイルム株式会社 | エッチングレジスト用感光性樹脂組成物、パターン作製方法、mems構造体及びその作製方法、ドライエッチング方法、ウェットエッチング方法、memsシャッターデバイス、並びに、画像表示装置 |
| EP2447773B1 (en) * | 2010-11-02 | 2013-07-10 | Fujifilm Corporation | Method for producing a pattern, method for producing a MEMS structure, use of a cured film of a photosensitive composition as a sacrificial layer or as a component of a MEMS structure |
| JP5174124B2 (ja) * | 2010-11-02 | 2013-04-03 | 富士フイルム株式会社 | Mems構造部材用感光性樹脂組成物、パターン作製方法、並びに、mems構造体及びその作製方法 |
| JP5417422B2 (ja) * | 2010-12-13 | 2014-02-12 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物 |
| CN102540726B (zh) * | 2010-12-13 | 2016-07-06 | 富士胶片株式会社 | 正型感光性树脂组成物、硬化膜及其形成方法、层间绝缘膜以及显示装置 |
| JP5536625B2 (ja) * | 2010-12-15 | 2014-07-02 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機el表示装置、及び、液晶表示装置 |
| JP5510347B2 (ja) * | 2011-01-26 | 2014-06-04 | Jsr株式会社 | ポジ型感放射線性組成物、層間絶縁膜及びその形成方法 |
| JP5642578B2 (ja) * | 2011-01-28 | 2014-12-17 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置 |
| JP5386527B2 (ja) * | 2011-02-18 | 2014-01-15 | 富士フイルム株式会社 | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、及びレジスト膜 |
| JP5772181B2 (ja) * | 2011-04-20 | 2015-09-02 | Jsr株式会社 | 感放射線性樹脂組成物、表示素子用層間絶縁膜及びその形成方法 |
| KR101336148B1 (ko) * | 2011-04-20 | 2013-12-03 | 제이에스알 가부시끼가이샤 | 포지티브형 감광성 수지 조성물, 표시 소자용 층간 절연막 및 그 형성 방법 |
-
2013
- 2013-09-16 TW TW102133419A patent/TW201415161A/zh unknown
- 2013-09-17 CN CN201380049705.6A patent/CN104685416B/zh not_active Expired - Fee Related
- 2013-09-17 KR KR1020157006403A patent/KR101725810B1/ko not_active Expired - Fee Related
- 2013-09-17 JP JP2014538405A patent/JP5933734B2/ja not_active Expired - Fee Related
- 2013-09-17 WO PCT/JP2013/074977 patent/WO2014050627A1/ja not_active Ceased
-
2016
- 2016-05-02 JP JP2016092605A patent/JP6285491B2/ja not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009288343A (ja) * | 2008-05-27 | 2009-12-10 | Fujifilm Corp | ポジ型レジスト組成物、及び該組成物を用いたパターン形成方法 |
| JP2011227449A (ja) * | 2010-01-19 | 2011-11-10 | Fujifilm Corp | 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機el表示装置、及び、液晶表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2014050627A1 (ja) | 2016-08-22 |
| KR20150043440A (ko) | 2015-04-22 |
| JP5933734B2 (ja) | 2016-06-15 |
| JP2016189006A (ja) | 2016-11-04 |
| CN104685416A (zh) | 2015-06-03 |
| JP6285491B2 (ja) | 2018-02-28 |
| WO2014050627A1 (ja) | 2014-04-03 |
| TW201415161A (zh) | 2014-04-16 |
| CN104685416B (zh) | 2019-05-14 |
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