KR101717899B1 - 프로세싱 챔버 세정 가스의 난류 유발 장치 및 방법 - Google Patents

프로세싱 챔버 세정 가스의 난류 유발 장치 및 방법 Download PDF

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KR101717899B1
KR101717899B1 KR1020137001264A KR20137001264A KR101717899B1 KR 101717899 B1 KR101717899 B1 KR 101717899B1 KR 1020137001264 A KR1020137001264 A KR 1020137001264A KR 20137001264 A KR20137001264 A KR 20137001264A KR 101717899 B1 KR101717899 B1 KR 101717899B1
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South Korea
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turbulence
cleaning
inducing
plate
inducing structures
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Korean (ko)
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KR20130136957A (ko
Inventor
후아 충
시지 동
키아윈 마웅
히로지 하나와
상원 강
데이비드 에이치. 콰치
도날드 제이.케이. 올가도
데이비드 부르
웨이-영 수
알렉산더 탐
안종 창
슈메드흐 아차리아
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어플라이드 머티어리얼스, 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020137001264A 2010-06-18 2011-06-13 프로세싱 챔버 세정 가스의 난류 유발 장치 및 방법 Active KR101717899B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US35642210P 2010-06-18 2010-06-18
US61/356,422 2010-06-18
US13/041,230 US8910644B2 (en) 2010-06-18 2011-03-04 Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas
US13/041,230 2011-03-04
PCT/US2011/040197 WO2011159615A2 (en) 2010-06-18 2011-06-13 Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas

Publications (2)

Publication Number Publication Date
KR20130136957A KR20130136957A (ko) 2013-12-13
KR101717899B1 true KR101717899B1 (ko) 2017-03-20

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KR1020137001264A Active KR101717899B1 (ko) 2010-06-18 2011-06-13 프로세싱 챔버 세정 가스의 난류 유발 장치 및 방법

Country Status (6)

Country Link
US (1) US8910644B2 (enExample)
JP (1) JP5813104B2 (enExample)
KR (1) KR101717899B1 (enExample)
CN (1) CN102934204B (enExample)
TW (1) TWI542725B (enExample)
WO (1) WO2011159615A2 (enExample)

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CN103388127B (zh) * 2012-05-10 2016-04-13 上海华虹宏力半导体制造有限公司 高密度等离子体化学气相沉积设备腔体刻蚀清洗方法
US10316409B2 (en) 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US9748121B2 (en) * 2013-03-05 2017-08-29 Applied Materials, Inc. Thermal coupled quartz dome heat sink
US10403521B2 (en) 2013-03-13 2019-09-03 Applied Materials, Inc. Modular substrate heater for efficient thermal cycling
US9677176B2 (en) * 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
KR102228941B1 (ko) * 2013-11-22 2021-03-17 어플라이드 머티어리얼스, 인코포레이티드 접근이 용이한 램프헤드
JP6123688B2 (ja) * 2014-01-29 2017-05-10 東京エレクトロン株式会社 成膜装置
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10786837B2 (en) 2015-11-30 2020-09-29 Tokyo Electron Limited Method for cleaning chamber of substrate processing apparatus
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
WO2019113478A1 (en) 2017-12-08 2019-06-13 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
JP6920245B2 (ja) * 2018-04-23 2021-08-18 東京エレクトロン株式会社 温度制御方法
JP6575641B1 (ja) * 2018-06-28 2019-09-18 株式会社明電舎 シャワーヘッドおよび処理装置
US10734219B2 (en) * 2018-09-26 2020-08-04 Asm Ip Holdings B.V. Plasma film forming method
US10883174B2 (en) * 2018-11-27 2021-01-05 Applied Materials, Inc. Gas diffuser mounting plate for reduced particle generation
WO2021034508A1 (en) 2019-08-16 2021-02-25 Lam Research Corporation Spatially tunable deposition to compensate within wafer differential bow
KR102618869B1 (ko) 2020-01-03 2023-12-27 램 리써치 코포레이션 배면 보우 보상 증착의 스테이션-대-스테이션 (station-to-station) 제어
WO2021146099A1 (en) * 2020-01-13 2021-07-22 Lam Research Corporation Multizone gas distribution plate for trench profile optimization
CN115053325A (zh) 2020-01-30 2022-09-13 朗姆研究公司 用于局部应力调节的uv固化
KR20210125420A (ko) * 2020-04-07 2021-10-18 에이에스엠 아이피 홀딩 비.브이. 샤워헤드용 플러싱 고정구
US20210335586A1 (en) * 2020-04-22 2021-10-28 Applied Materials, Inc. Methods and apparatus for cleaning a showerhead
CN111501024A (zh) * 2020-05-08 2020-08-07 Tcl华星光电技术有限公司 气相沉积装置
CN112331588B (zh) * 2020-10-26 2024-05-17 北京北方华创微电子装备有限公司 半导体设备中的卡盘组件及半导体工艺设备
KR20230043457A (ko) * 2021-09-24 2023-03-31 주성엔지니어링(주) 기판 처리 장치의 세정 방법
US20250305128A1 (en) * 2022-05-13 2025-10-02 Lam Research Corporation Multi-zone gas distribution for asymmetric wafer bow compensation

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Also Published As

Publication number Publication date
US8910644B2 (en) 2014-12-16
US20110308551A1 (en) 2011-12-22
WO2011159615A2 (en) 2011-12-22
KR20130136957A (ko) 2013-12-13
CN102934204A (zh) 2013-02-13
TW201213603A (en) 2012-04-01
WO2011159615A3 (en) 2012-04-19
CN102934204B (zh) 2015-12-09
JP2013534725A (ja) 2013-09-05
TWI542725B (zh) 2016-07-21
JP5813104B2 (ja) 2015-11-17

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