CN102934204B - 诱导处理腔室清洁气体的紊流的方法及设备 - Google Patents

诱导处理腔室清洁气体的紊流的方法及设备 Download PDF

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Publication number
CN102934204B
CN102934204B CN201180028838.6A CN201180028838A CN102934204B CN 102934204 B CN102934204 B CN 102934204B CN 201180028838 A CN201180028838 A CN 201180028838A CN 102934204 B CN102934204 B CN 102934204B
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China
Prior art keywords
cleaning
plate
turbulence
cleaning plate
inducing structures
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CN201180028838.6A
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English (en)
Chinese (zh)
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CN102934204A (zh
Inventor
仲华
董希子
基奥温·貌
塙広二
姜圣元
戴维·H·夸
唐纳德·J·K·奥尔加多
戴维·布尔
许伟勇
亚历山大·塔姆
常安中
萨姆埃德霍·阿卡赖亚
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN201180028838.6A 2010-06-18 2011-06-13 诱导处理腔室清洁气体的紊流的方法及设备 Active CN102934204B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US35642210P 2010-06-18 2010-06-18
US61/356,422 2010-06-18
US13/041,230 US8910644B2 (en) 2010-06-18 2011-03-04 Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas
US13/041,230 2011-03-04
PCT/US2011/040197 WO2011159615A2 (en) 2010-06-18 2011-06-13 Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas

Publications (2)

Publication Number Publication Date
CN102934204A CN102934204A (zh) 2013-02-13
CN102934204B true CN102934204B (zh) 2015-12-09

Family

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CN201180028838.6A Active CN102934204B (zh) 2010-06-18 2011-06-13 诱导处理腔室清洁气体的紊流的方法及设备

Country Status (6)

Country Link
US (1) US8910644B2 (enExample)
JP (1) JP5813104B2 (enExample)
KR (1) KR101717899B1 (enExample)
CN (1) CN102934204B (enExample)
TW (1) TWI542725B (enExample)
WO (1) WO2011159615A2 (enExample)

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US10316409B2 (en) 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US9748121B2 (en) * 2013-03-05 2017-08-29 Applied Materials, Inc. Thermal coupled quartz dome heat sink
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US9677176B2 (en) * 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
CN107546157A (zh) * 2013-11-22 2018-01-05 应用材料公司 易取灯头
JP6123688B2 (ja) * 2014-01-29 2017-05-10 東京エレクトロン株式会社 成膜装置
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
WO2017094388A1 (ja) * 2015-11-30 2017-06-08 東京エレクトロン株式会社 基板処理装置のチャンバークリーニング方法
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
CN111433902A (zh) 2017-12-08 2020-07-17 朗姆研究公司 向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有改进的孔图案的集成喷头
JP6920245B2 (ja) * 2018-04-23 2021-08-18 東京エレクトロン株式会社 温度制御方法
JP6575641B1 (ja) * 2018-06-28 2019-09-18 株式会社明電舎 シャワーヘッドおよび処理装置
US10734219B2 (en) * 2018-09-26 2020-08-04 Asm Ip Holdings B.V. Plasma film forming method
US10883174B2 (en) * 2018-11-27 2021-01-05 Applied Materials, Inc. Gas diffuser mounting plate for reduced particle generation
KR102505474B1 (ko) 2019-08-16 2023-03-03 램 리써치 코포레이션 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착
US12272608B2 (en) 2020-01-03 2025-04-08 Lam Research Corporation Station-to-station control of backside bow compensation deposition
US12394603B2 (en) 2020-01-13 2025-08-19 Lam Research Corporation Multizone gas distribution plate for trench profile optimization
WO2021154641A1 (en) 2020-01-30 2021-08-05 Lam Research Corporation Uv cure for local stress modulation
KR20210125420A (ko) * 2020-04-07 2021-10-18 에이에스엠 아이피 홀딩 비.브이. 샤워헤드용 플러싱 고정구
US20210335586A1 (en) * 2020-04-22 2021-10-28 Applied Materials, Inc. Methods and apparatus for cleaning a showerhead
CN111501024A (zh) * 2020-05-08 2020-08-07 Tcl华星光电技术有限公司 气相沉积装置
CN112331588B (zh) * 2020-10-26 2024-05-17 北京北方华创微电子装备有限公司 半导体设备中的卡盘组件及半导体工艺设备
KR20230043457A (ko) * 2021-09-24 2023-03-31 주성엔지니어링(주) 기판 처리 장치의 세정 방법
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Also Published As

Publication number Publication date
WO2011159615A3 (en) 2012-04-19
JP2013534725A (ja) 2013-09-05
KR20130136957A (ko) 2013-12-13
TWI542725B (zh) 2016-07-21
WO2011159615A2 (en) 2011-12-22
KR101717899B1 (ko) 2017-03-20
TW201213603A (en) 2012-04-01
US8910644B2 (en) 2014-12-16
JP5813104B2 (ja) 2015-11-17
CN102934204A (zh) 2013-02-13
US20110308551A1 (en) 2011-12-22

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