KR101685148B1 - 표시 디바이스 제조 장치, 표시 디바이스의 제조 방법 및 표시 디바이스 - Google Patents
표시 디바이스 제조 장치, 표시 디바이스의 제조 방법 및 표시 디바이스 Download PDFInfo
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- KR101685148B1 KR101685148B1 KR1020137014445A KR20137014445A KR101685148B1 KR 101685148 B1 KR101685148 B1 KR 101685148B1 KR 1020137014445 A KR1020137014445 A KR 1020137014445A KR 20137014445 A KR20137014445 A KR 20137014445A KR 101685148 B1 KR101685148 B1 KR 101685148B1
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- Prior art keywords
- film
- organic
- sealing film
- sealing
- film forming
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 90
- 238000007789 sealing Methods 0.000 claims abstract description 359
- 238000003860 storage Methods 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims description 42
- 229910010272 inorganic material Inorganic materials 0.000 claims description 13
- 239000011147 inorganic material Substances 0.000 claims description 13
- 239000011368 organic material Substances 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 2
- 230000035699 permeability Effects 0.000 abstract description 27
- 239000012467 final product Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 467
- 238000005401 electroluminescence Methods 0.000 description 155
- 229910052581 Si3N4 Inorganic materials 0.000 description 75
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 75
- 239000010410 layer Substances 0.000 description 72
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- 238000012545 processing Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 23
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- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 238000007740 vapor deposition Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 14
- 238000012546 transfer Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000012188 paraffin wax Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
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- 238000010894 electron beam technology Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- -1 paraffin Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000005188 flotation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F13/00—Illuminated signs; Luminous advertising
- G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
- G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2010-272848 | 2010-12-07 | ||
| JP2010272848 | 2010-12-07 | ||
| PCT/JP2011/078133 WO2012077659A1 (ja) | 2010-12-07 | 2011-12-06 | 表示デバイス製造装置、表示デバイスの製造方法、及び表示デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20130129969A KR20130129969A (ko) | 2013-11-29 |
| KR101685148B1 true KR101685148B1 (ko) | 2016-12-09 |
Family
ID=46207147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137014445A KR101685148B1 (ko) | 2010-12-07 | 2011-12-06 | 표시 디바이스 제조 장치, 표시 디바이스의 제조 방법 및 표시 디바이스 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5836974B2 (ja) |
| KR (1) | KR101685148B1 (ja) |
| TW (1) | TW201240185A (ja) |
| WO (1) | WO2012077659A1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6267449B2 (ja) * | 2013-03-15 | 2018-01-24 | 東京エレクトロン株式会社 | 有機デバイスの製造方法及び有機デバイスの製造装置 |
| JP6605657B1 (ja) * | 2018-05-24 | 2019-11-13 | キヤノントッキ株式会社 | 成膜装置、成膜方法及び電子デバイスの製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001341835A (ja) * | 2000-05-31 | 2001-12-11 | Shibuya Kogyo Co Ltd | 素子の搬送装置 |
| JP2009037798A (ja) * | 2007-07-31 | 2009-02-19 | Sumitomo Chemical Co Ltd | バリア層つき基板、表示素子および表示素子の製造方法 |
| JP2010082797A (ja) | 2007-10-22 | 2010-04-15 | Toshiba Corp | マイクロマシン装置及びマイクロマシン装置の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6441192A (en) | 1987-08-07 | 1989-02-13 | Alps Electric Co Ltd | Thin film electroluminescent display element |
| JP2793048B2 (ja) | 1991-02-22 | 1998-09-03 | 三井化学株式会社 | 有機発光素子の封止方法 |
| JP3290375B2 (ja) | 1997-05-12 | 2002-06-10 | 松下電器産業株式会社 | 有機電界発光素子 |
| JP3924944B2 (ja) * | 1998-08-26 | 2007-06-06 | 双葉電子工業株式会社 | 有機ｅｌ及びその製造方法 |
| JP2002322556A (ja) * | 2001-02-21 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 成膜方法及び成膜装置 |
| JP4801346B2 (ja) * | 2003-12-26 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2006019087A (ja) * | 2004-06-30 | 2006-01-19 | Optrex Corp | 有機ｅｌ表示素子の製造方法 |
| JP5575353B2 (ja) * | 2005-11-30 | 2014-08-20 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
| JP4378711B2 (ja) * | 2006-03-29 | 2009-12-09 | 株式会社日立プラントテクノロジー | 有機ｅｌパネルの製造設備における湿度管理方法および湿度管理システム |
| JP2008127628A (ja) * | 2006-11-21 | 2008-06-05 | Fujifilm Corp | 蒸着装置、蒸着方法、及び機能性素子の製造方法 |
-
2011
- 2011-12-06 JP JP2012547861A patent/JP5836974B2/ja active Active
- 2011-12-06 TW TW100144890A patent/TW201240185A/zh unknown
- 2011-12-06 WO PCT/JP2011/078133 patent/WO2012077659A1/ja active Application Filing
- 2011-12-06 KR KR1020137014445A patent/KR101685148B1/ko active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001341835A (ja) * | 2000-05-31 | 2001-12-11 | Shibuya Kogyo Co Ltd | 素子の搬送装置 |
| JP2009037798A (ja) * | 2007-07-31 | 2009-02-19 | Sumitomo Chemical Co Ltd | バリア層つき基板、表示素子および表示素子の製造方法 |
| JP2010082797A (ja) | 2007-10-22 | 2010-04-15 | Toshiba Corp | マイクロマシン装置及びマイクロマシン装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201240185A (en) | 2012-10-01 |
| KR20130129969A (ko) | 2013-11-29 |
| JP5836974B2 (ja) | 2015-12-24 |
| WO2012077659A1 (ja) | 2012-06-14 |
| JPWO2012077659A1 (ja) | 2014-05-19 |
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