TW201240185A - Display device manufacturing apparatus, display device manufacturing method, and display device - Google Patents

Display device manufacturing apparatus, display device manufacturing method, and display device Download PDF

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Publication number
TW201240185A
TW201240185A TW100144890A TW100144890A TW201240185A TW 201240185 A TW201240185 A TW 201240185A TW 100144890 A TW100144890 A TW 100144890A TW 100144890 A TW100144890 A TW 100144890A TW 201240185 A TW201240185 A TW 201240185A
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TW
Taiwan
Prior art keywords
film
sealing
organic
sealing film
film forming
Prior art date
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TW100144890A
Other languages
Chinese (zh)
Inventor
Hiraku Ishikawa
Teruyuki Hayashi
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201240185A publication Critical patent/TW201240185A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F13/00Illuminated signs; Luminous advertising
    • G09F13/20Illuminated signs; Luminous advertising with luminescent surfaces or parts
    • G09F13/22Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • H10K59/8731Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Abstract

An object of the invention is to provide a display device manufacturing apparatus, a display device manufacturing method and a display device which offer favorable throughput, are capable of temporarily storing a provisionally sealed body of the display device in a state that is exposed to the atmosphere, and yield a display device finished product having any of a variety of layered structures depend on the performance requirements. A first sealing film is formed on the surface of an organic EL element by a first sealing film forming device 27, thus yielding a provisionally sealed body. The provisionally sealed body is removed by an LL28 from a reduced pressure space to a provisionally sealed body storage section 29 in an atmospheric pressure space. Provisionally sealed bodies, having been temporarily stored in the provisionally sealed body storage section 29 with moisture permeation resistance maintained by the first sealing film, are then conveyed to each of the SiN film forming devices 30 in each second sealing film forming section 6 by a conveying device with predetermined timing. A second sealing film is formed on the provisionally sealed bodies within each of the SiN film forming devices 30.

Description

201240185 六、發明說明: 【發明所屬之技術領域】 【0001】 ㈣2明侧於—獅成絲密觸示零件的密封膜之顯示元 件製k裝置、顯示元件製造方法、及顯示元件。 【先前技術】 【0002】 近年來,吾人開發出一種例如利用電致發光(肌; 的有機此零件,以作^顯示零件。有機EL 祕電力比陰極射線管等產品更小,且自發光特性使盆 【0003】201240185 VI. Description of the invention: [Technical field to which the invention pertains] [0001] (4) The display device k device, the display device manufacturing method, and the display device of the sealing film of the lion-forming wire-tight component. [Prior Art] In recent years, we have developed an organic component such as electroluminescence (muscle; for use as a display part. The organic EL power is smaller than that of a cathode ray tube, and has self-luminous characteristics. Make basin [0003]

侵入顯示零件很怕水分,從零件的缺陷部位 域,因度降低’進而產生稱為暗點的非發光區 愛件面形成具備耐透濕性的密封膜(以下以有機EL i有機EL 有機此零件的表面形成有密封膜者,稱 ㈣=====的崎料所構 【无刖技術文獻] / [專利文獻] 【0004】 曰本特開平10 — 312883號公報 曰本特開平4 —267097號公報 曰本特開昭64—41192號公報 專利文獻1 專利文獻2 專利文獻3 【發明内容】 ⑧ 201240185 [發明所欲解決的問題] 【0005】 然而,為了確保有機EL元件充分的耐透渴性, ,以覆蓋在基板表面上所附著的微粒之密封膜有1必m度 缺陷部位,水分便有可能從該缺陷部位侵人。“層之間會產生 為了評價此有機EL元件的耐透濕性,而谁彳 一 的環境實驗,但是為了通過該環境試驗 。、座度㈣ (emical Vapor Deposition > 有40分鐘左右的時間,即使是教 ' 门進仃成膜,必須 件製造裝置有方i發:,目的在於提供-種顯示元 中的顯示元件暴露於大;由而献:及,^不兀件,其能夠將製造途 能的各種膜構造之顯示ί件的到具有因應要求性 之顯示元件。 σσ ’衣1^出足以達成優良產出 [解決問題之技術手段] 【0007】 本發明之顯示元件萝造步 _ 該顯示零件的密封膜2在顯示零件上形成用來密封 =包r ;,密封媒;二=減件製,置之特 形成第1密封膜;第2宓 、i下在3亥顯示零件的表面 膜上形成第2密封膜;伴$ 成機構,在已形成的第1密封 不令件從該第1密封膜 #將形成有該第1密封膜的顯 輯膜形成機構搬運至該保管機構;以及第2搬 201240185 運機構’將由該保管機構所保管的顯 該第2密封膜形成_。 ·^佩雜官機構知運至 【0008】 該顯3法^在顯示零件上形成用來密封 減嫌該顯示零件=二封於 至佯管舰.料的.,f件彳、料1密封膜形成機構搬運 封膜开^㈣.v搬運步驟’將所絲_示零件搬運至第2密 ^跡成麟,以及以密封卿成步驟 穷 成機構,在搬運來的顯示裳件"楚】〜,由°亥第2在封膜形 【_】 料之料1⑽膜上形成第 2密封膜。 所製ί發明之顯耐件’其特徵為.:由前述_示元件製造方法 [對照先前技術之功效] 【0010】 暫時性密封體(以下稱為暫時^顯,件的 間而暫時保管,並因應顯示 I,、出至大軋壓空 膜。即使在職财^各鮮2密封 、ηί直賴的魏麵麟置,騎前騎時㉟封體依岸 進订成膜,即可提升_讀之產出。 n h封體依序 【實施方式】 [實施發明之最佳態樣] 【0012】 LI明,本發明實施態樣_式詳細說明本發明。 柄明之顯祝件,係可於減__,麵.基板上的 ⑧ 201240185 2 ΐ,形成確保了既定時間内的耐透濕性的薄 第件的用途分別在第1密封膜上形成 芦及^任if 2 ^、封膜及第2密封膜的材質、層構造(單 再ί,之Ϊ可將i體阻障基板與暫時密封體的表面接合。 成第2密4膜之後二=?!封體的第1密封膜上形 封膜的表面。 α體卩1^基板猎者黏接層接合在該第2密 【0013】 但顯示零件由械材料所構成時 構成^ 之觀點來看,麵示零件的正 ;;^令件產生化學反應 ,,更良好的耐透)濕=來看第^ 且由痛材料所構成。⑽膜、 第2封膜的取上層 2形成;碳化氫膜係由物理蒸鑛⑽:pf 由電漿CVI)Intrusion display parts are very afraid of moisture, and the degree of damage is reduced from the defect area of the part, and a non-light-emitting area called a dark spot is formed to form a sealing film having moisture permeability resistance (hereinafter, organic EL i organic EL organic The surface of the part is formed with a sealing film, and it is called (4) =====. The structure of the material is [innocent technical literature] / [patent literature] [0004] 曰本特开平10 — 312883号 曰本特开平4 — Japanese Patent Publication No. 267097 (Patent Document 1) Patent Document 2 Patent Document 3 [Summary of the Invention] 8 201240185 [Problems to be Solved by the Invention] [0005] However, in order to ensure sufficient resistance of the organic EL element Thirsty, the sealing film covering the particles adhering to the surface of the substrate has a defect portion which is required to be inferior, and moisture may invade from the defect portion. "The layer is formed to evaluate the resistance of the organic EL element. Moisture permeability, and whoever conducts environmental experiments, but in order to pass the environmental test., (4) (emical Vapor Deposition > 40 minutes or so, even if it is taught that the door is formed into a film, it must be manufactured. The purpose is to provide a display element in the display element that is exposed to a large size; and to provide a display of various film structures capable of manufacturing the process. The display element of the present invention is sufficient for achieving excellent output [Technical means for solving the problem] [0007] The display element of the present invention has a sealing film 2 for the display part formed on the display part Sealing = package r;, sealing medium; two = reducing parts, forming a first sealing film; second, i, forming a second sealing film on the surface film of the 3H display part; The first sealing member that has been formed conveys the display film forming mechanism in which the first sealing film is formed from the first sealing film # to the storage mechanism; and the second moving device 1240185 is operated by the storage mechanism The storage of the second sealing film is formed _. ·^・・・・・・^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ .materials, f pieces of 彳, material 1 sealing film forming mechanism to carry the sealing film open ^ (four). v handling steps ' Carrying the wire-showing parts to the second dense track into the lining, and the sealing mechanism into a poorly-formed mechanism, the display of the moving parts is displayed in the seal, and the second is in the seal shape [_ The second sealing film is formed on the film of the material 1 (10). The characteristic member of the invention is characterized by: the manufacturing method of the above-mentioned component [cf. the effect of the prior art] [0010] temporary sealing body (below) It is called temporary ^ display, and the parts are temporarily stored, and in response to the display I, the large rolling air film. Even in the job of the wealth of each fresh 2 seal, ηί directly depends on the Wei face Lin, riding before riding 35 Sealing the film on the shore to form a film, you can improve the output of reading. [Numpressed embodiment of the invention] [Embodiment] [Best Mode for Carrying Out the Invention] [0012] The present invention will be described in detail with reference to the embodiments of the present invention. The handle of the stalk can be used to reduce the moisture permeability of the stencil on the __, surface. 8 201240185 2 ΐ, to form a thin piece of the first sealing film ^if if 2 ^, the material and layer structure of the sealing film and the second sealing film (single and then, the surface of the i-blocking substrate and the temporary sealing body can be joined. After the second dense film, the second =? The surface of the sealing film on the first sealing film of the sealing body. The α-body 卩1^ substrate hunter adhesive layer is bonded to the second dense layer [0013], but the display part is composed of mechanical materials. , showing the positive of the part;; ^ the chemical reaction of the order, more good resistance to penetration) wet = look at the ^ and consist of painful materials. (10) The film and the second film are formed by the upper layer 2; the hydrocarbon film is composed of the physical vapor (10): pf by the plasma CVI)

所形成;Ai膜、_3膜係由賴瓜⑽聊DeP〇sition) [0014] X 性之厚度即可。亦即只要是不會因大氣而’施確保耐透濕 的材質、在大麵空間内暫時保鈦可。 田的厚度。第.2密封膜的厚度,可依據 、荨來设定成適 要求之耐透濕性等來適當地設定之。…、凡件的用途並因應所 於第1密封膜的正上方,藉由⑽形成第2密封膜時,亦可 201240185 2由二;惰著於第1密封膜表面之水分等除 密封性。在封膜與苐2密麵的密接性得以提升,可提升 【0015】 出機構,將暫時密封膜而得到暫時密封體;取 裝置取出;保管的第1密封膜形成 猎由輪入機構搬入暫時密ϋ在封膜形成部, 分離。顯示元件势料封體軸梢弟2密封膜部 部,此時,亦可個同種的第2密封膜形成 配置的複數個第2密封;开密封體保管部搬運至呈並排 體保直列連接的複數個口 機EL元件&梅、猶舰树時,該有 【0017】 [實施態樣1] ιοί "^ΤΖΊί EL ^ 圖。 α圖2係有紐轉rn的製造方法之示意説明 在有機EL元件1〇;[中,在玻璃其 .. 物(Indium Tin Oxide ; πό)膜箄上,例如由銦锡氧化 層及陰極層12g所構乍^^成的陽極層山、堆疊發光 密封膜14所密封。在此,對第彳苐1雄、封臈13係由第2 單層構造之情形進^月關选封膜13及第2密_4具有 第1密封膜13,從不與有機EL零件12產生化學反應之觀點 201240185 第2穷斤構成。無機材料,可舉出⑽、s·等。 等舉出sin、漏等無機材料,及碳化氮、 材料。ίΐ ίΐ;耐透濕性之觀點來看,宜使用無機 極,^^=山係能夠使發光層中產生的光線透射的透明電 正孔注入層.第1 =藍孔輸送層12a,第2層係 第5層係綠發光層12/,第j =12c,弟4層係紅發光層12d, 明的第!至第送層.另外,在此説 是鐘以及銀合的銀、紹、紹合金、_呂合金或 【0019】 、曰 製造有機EL元件101時,首 層11a的玻璃基板]〗上形 ®^2Α所不,在形成有陽極 在形成树極層1Ia ^零㈣之後詞2β所示, 形成;Γ3。藉此一日= 體=咖 第1密封膜13的厚度, 第1密封膜13的_空間取;封體102從已形成 保耐透濕性之厚度即可。亦即 ,t間而暫時保管時,能確It is formed; the Ai film and the _3 film system are made of Lai Gua (10) and the thickness of X is sufficient. In other words, as long as it is not made of a material that is resistant to moisture, it is temporarily protected from titanium in a large space. The thickness of the field. The thickness of the second sealing film can be appropriately set depending on the desired moisture permeability resistance and the like. In the case where the second sealing film is formed by (10) in accordance with the use of the first sealing film, the sealing property can be removed by the moisture of the surface of the first sealing film. The adhesion between the sealing film and the 苐2 surface is improved, and the mechanism can be improved [0015], and the film is temporarily sealed to obtain a temporary sealing body; the device is taken out; the first sealing film stored is formed by the wheeling mechanism. The seal is separated in the film forming portion. The display element material seals the shaft seal portion 2 of the sealing film portion. In this case, a plurality of second sealing layers of the same type of second sealing film may be formed; and the opening sealing body storage portion is transported to the side-by-side body in a straight line connection. When there are a plurality of EL elements & mei and yushu trees, there are [0017] [implementation 1] ιοί "^ΤΖΊί EL ^ map. FIG. 2 is a schematic diagram illustrating the manufacturing method of the NF-turned rn in the organic EL element 1 [; [in the glass (Indium Tin Oxide; πό) film, for example, an indium tin oxide layer and a cathode layer 12g of the anode layer mountain and the stacked light-emitting sealing film 14 are sealed. Here, the first sealing film 13 and the second sealing film 13 are provided with the first sealing film 13 and the organic EL component 12 from the case where the second sealing layer 13 and the second sealing layer 13 are formed by the second single layer structure. The viewpoint of producing a chemical reaction 201240185 The second poor composition. Examples of the inorganic material include (10), s, and the like. Etc. sin, leaks and other inorganic materials, and carbonized nitrogen, materials. ΐ ΐ 耐 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; The layer is the fifth layer of the green light-emitting layer 12/, the j=12c, and the fourth layer is the red light-emitting layer 12d, the first! In the case of the first layer 11a, the glass substrate of the first layer 11a is formed by the silver and the silver, the Shao, the alloy, the _Lu alloy or the [0019], and the organic EL element 101. ^2Α, in the formation of an anode in the formation of the tree layer 1Ia ^ zero (four) after the word 2β, formed; Γ 3. In this case, the thickness of the first sealing film 13 is taken as the thickness of the first sealing film 13, and the thickness of the sealing body 102 is formed to have a thickness which is resistant to moisture permeability. That is, when t is temporarily kept, it can be confirmed.

度即可。可因應膜的材質會因大氣而吸濕劣化之厚 設定適當的厚度。如本實施態樣^内暫時保管的時間等來 之情开# =暫時保管24小時左二=3為無^材料即SiN 【0021】 了7予復叹疋為50〜5〇〇咖即可。 而如圖2C所示,在暫時保 13上,形成第2密_ 14體⑽之第】密封膜 叫到有機EL元件101。第2密封 9 【0022】 201240185 瓣求之耐透濕 之』發:製造裝置2的構造例 著玻璃基板η的搬運方向直裝置2包含:由沿 下稱為LL)22、成膜裝置23、、真空職室(以 成裝置25、TM26、第j密_2、#下=TM)24、電極形 保管部29,與3個第2穷封駿置27、⑽以及暫時密封體 膜裝置幻、TM24、部6 °由裝載器21、LL22、成 27構成暫時密封體形成部成#2 、T=第1密封膜形成裝置 LL62、及作為第2密封膜“包含:裝載器61、 形成SiN膜之SiN膜形成^ 3、〇置的一個例子之藉由電漿⑽法 ^ ^ UIml SiN 〇 形不限_ 成部6⑽膜 裝載。〇 21、LL22、成膜梦署9q Two /<而 。直列連接之情形,只要是以線内 、 如ί可將成膜農置23、電極形成裝置25、工第】晉二 配置於共通搬運室的周圍。 在封膜形成裝置27 【0023】 層11==反=將ϊίί板11 ’例如預先在表面上形成陽極 =:、職、⑽係用來在各處理裝置之間傳遞^基板 層璃基板11上形成正孔注人 ㈣、電子先層i2c、紅發光㈣、綠發光 電極形成裝置25係使用圖案遮罩,對例如銀、紹、紹合金、 201240185 鋰鋁合金或是錳以及銀的合金等進行蒸鍍或濺鍍,以在電子輸送 層12f上形成陰極層i2g的裝置。 第1密封_成裝置27侧如侧GVD或蒸鮮方式形成無 機膜等第1密封膜13而將玻璃基板u上所形成的各種膜層密 起來的裝置。 -士 璃基板11自裝載器21通過一方的閘閥送入至似2,接 ί^22内令其為減壓狀態,再將玻璃基板11通過另一方的閘 ill 23。而在成膜裝置23、™24、電極形成裝置25、 彡成裝置27祕持減壓狀態之狀態下依序搬 it㈡於槪树12表面形成第1 _ 【0024】 係藉ί 裝H、㈣?及暫時密封體保管部29 ^即體的暫時密封體 LL28。接著,將LL28門访兔目j ^封膜形成裝置27送出至 搬運至暫時密封體仵管邱置將暫時密封體102自LL28 盒。輯體U 29内,收納於基板E盒載置部的基板£ 另外’暫時密封體保管部29亦可 可包含逐—载置i個暫時密 土板g盒載置部,亦 另外,暫時密封體保技部^^暫^密封體載置部。 氧等而保持加雜態;而無須將減驗態,或因封入 Ϊ :〇】:第上細形成裝置27送出14二:;=密封 “ίΐ亦Τ!密封體保管部29内並不封心封而tS9/盒 πDegree can be. The material of the film can be made to absorb moisture and deteriorate due to the atmosphere. Set the appropriate thickness. As in the case of this embodiment, the time for temporary storage is the same as that of the time. # = Temporary storage for 24 hours, left two = 3 for no material, ie SiN [0021] 7 for the sigh is 50~5 〇〇 . On the other hand, as shown in Fig. 2C, the first sealing film forming the second dense body (10) is called the organic EL element 101. The second seal 9 [0022] 201240185 The valve is made to be resistant to moisture permeability. The structure of the manufacturing apparatus 2 is a transporting device 2 in which the glass substrate η is conveyed. , vacuum chamber (to make device 25, TM26, j-th dense_2, #下=TM) 24, electrode-shaped storage portion 29, and three second poor seals 27, (10) and temporary sealing film device device magic The TM24 and the portion 6 are composed of the loader 21, the LL22, and the 27, and the temporary sealing body forming portion is #2, T = the first sealing film forming device LL62, and the second sealing film "including: the loader 61 and the SiN. An example of the formation of the SiN film of the film is by the plasma (10) method ^ ^ UIml SiN 〇 shape is not limited to the film of the 6 (10) film. 〇 21, LL22, film forming dream 9q Two / < In the case of in-line connection, as long as the film is placed in the line, the film forming apparatus 23, the electrode forming apparatus 25, and the second stage are arranged in the vicinity of the common transfer chamber. In the film forming apparatus 27 [0023] 11==反=will ϊ ίί plate 11 'for example, forming an anode on the surface in advance =:,,,,,,,,,,,,,,,,,,,,,,,,, Forming a positive hole in the plate 11 (4), an electron first layer i2c, a red light emitting (four), and a green light emitting electrode forming device 25 using a pattern mask for, for example, silver, Shao, Shao alloy, 201240185 lithium aluminum alloy or manganese and silver The alloy or the like is vapor-deposited or sputtered to form a cathode layer i2g on the electron transport layer 12f. The first sealing-forming device 27 side forms a first sealing film 13 such as an inorganic film as a side GVD or a vapor deposition method to form a glass. A device in which various film layers formed on the substrate u are densely sealed. - The glass substrate 11 is fed from the loader 21 through one of the gate valves to a state in which it is decompressed, and then the glass substrate 11 is placed. By the other gate ill 23, the film forming apparatus 23, the TM24, the electrode forming apparatus 25, and the forming apparatus 27 are sequentially held in a state of decompression, and the second (1) is formed on the surface of the eucalyptus 12 to form the first _ [0024] 】 By attaching H, (4), and the temporary sealing body storage unit 29, that is, the temporary sealing body LL28 of the body. Then, the LL28 door-to-door rabbit sealing device 27 is sent to the temporary sealing body. The temporary sealing body 102 is placed in the LL28 box. The body U 29 is housed in the substrate E. The substrate of the mounting portion is not limited to the 'temporary sealing member storage portion 29'. The temporary sealing member g-mounting portion may be placed one by one, and the temporary sealing body protecting portion is placed on the sealing body. Molybdenum, etc., remain mixed; no need to reduce the state, or because of the enclosed Ϊ: 〇: the first fine forming device 27 sends out 14 2:; = seal " ΐ ΐ Τ 密封 密封 密封 密封 密封 密封 密封 密封 密封Not sealed and tS9/box π

S 【0025】 201240185 的暫亦可包含暫時密封體保管部29以外 臂、龄送册、勹、上σ ^由AGV(Auto Guided Vehicle)、機械手 之氣:浮:搬晋^:密_ 102浮昇而移動的氣體喷吐機構 、將每碗^ί般運裝置’運至前述暫時密封體保管部。 保管Ξ二S 29或驗暫時密封體 ^、、,册^ m ' ,或每個基板匣盒藉由AGV、機械手臂、 t二ίΐϊ昇Γ裝置等搬運裝置,搬運至第2密封膜形成 =6置%所,送人絲顧61 ’通過服 態的SiN康彡絲置3〇。 王騎献狀 【0026】 圖4係#第1密封卿成裝置27狀形成作為第丨密封膜 膜形成裝置(電漿CVD裝置)3(以下稱為⑽裝置)時 的一構”之示意侧剖面圖。⑽裝置3 ’係例如輕射線槽孔天線S [0025] 201240185 may also include temporary arm storage unit 29 outer arm, age delivery book, 勹, upper σ ^ by AGV (Auto Guided Vehicle), robotic gas: float: move Jin: secret _ 102 The gas ejecting mechanism that moves up and down transports each bowl of the device to the temporary sealed body storage unit. Ξ S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S 6 sets the %, give the person to take care of the 61' through the state of the SiN Kang silk to set 3 〇. Fig. 4 is a schematic side view of the first seal forming device 27 formed as a second sealing film forming device (plasma CVD device) 3 (hereinafter referred to as "10) device" Sectional view. (10) Device 3 ' is for example a light ray slot antenna

Sl0t Antenna;腿)型的裝置,具備氣密且接地 的、”勺略0靖狀的處理室301。處理室301 ’係例如銘製,具 略中央部位形成了圓形開口部31〇的平板圓環狀的底壁3仙以及 ,繞底壁301a設置的側壁,且上部形成開口。另外,亦可在處理 室301的内周圍設置由石英、A—等陶曼所構成的 。 【0027】 在處理室301的側壁上設置了形成環狀的氣體導入構件 315,該氣體導入構件315與處理氣體供給系統316連接。氣體導 入構件315配置成例如淋幕狀。處理氣體供給系統316的既定處 理氣體透過氣體導入構件315被導入處理室301内。處理氣體可 因應電漿處理種類以及内容選用適當的氣體。例如,在利用電漿 CVD形成SiN膜的情況下’可使用矽烷(SiH4)氣體、氨氣(N 1 .氣(N2)等氣體。 另外,在處理室301的側壁上,設有在CVD裝置3所憐接的 傳遞模組26、28之間搬入或送出玻璃基板11的搬入口 325、送出 12 ⑧ 201240185 口 Ιοοϋ該搬入口 325、送出口 355的開閉閘閥326、356。 在處理室301的底壁3〇la上設有以與開口部3 朝下方突出的有底圓筒狀的排氣室311。在排氣室311 有排氣管323 ’排氣管323與具備高速真空泵的排氣裝 汉 接。排氣裝置324運作使處理室3〇1氣 ^ 間ma透過排氣管323排出。如是,便可將處理=== 減壓至既定的真空度,例如〇. 133Pa。 内邛同速 【0029】 在排氣室311的底部中*,由謂等陶 略垂直的方式如炫,在餘構件的前端部= 構了件用 302〇^/J302 的外緣U了用末保持玻璃基板 【0030】 環狀S ^部所形成的開口部沿著其周圍部位設置了 硫的支持部327。在支持部327上透過密封構件3 设置了介電體,例如由石英、Α1〇笙 规^方式 圓盤狀的介電體窗328。、 以構成且微波可透過的 【0031] 在介電體窗328的上方,以對向試料台 撕在與介電體^表^接^犬 ^面孔板撕係由導體,例 孔332,其形成既定圖安。介成且貝通了複數個微波放射槽 波放射槽i'U兕,带二/in、卩,槽孔板331構成RLSA天線。微 間隔係根據微波波長^ 放射槽孔3二== 【0032】 201240185 t數的介電體板333以互相面接觸方 體圓板部:在介電體圓板部的約板=介電 射部從孔部的周圍以相對於介電體圓板㈣略垂= 【0033】 的太,處_^ 301的頂面上’以覆蓋槽孔板331以及介電體板333 勺方式,δ又置了圓盤狀的防護蓋體334。葚^ ^ ^ ^ ^ ^ ^ ^不銹鋼等金屬所製成的。處理請的$=== 間被密封構件335所密封。 貝U隻盍體334之 【0034】 卻水ίίϋ334的内部形成了蓋體側冷卻水流路334a,讓冷 體ΪΪ2Ϊ 水流路_内流通,便可對槽孔板331、介電 體=地& 333 '防護蓋體334進行冷卻。另外,防護蓋 【0035】 導波Ϊ3ΪΪ 2的上壁的中央形成了開D部336,該開口部與 Ϊί °導波f 337具有從防護蓋體334的開口部336 波ί 337:,在並 =:伸且剖面為矩形的矩形導 \連接。微波產生裝置339職生的微波,例如頻率 微波會透過導波管337傳遞到上述槽孔板331。另外, ^皮的頻率亦可採用8.35GHz、h 、915施等。矩形導波卜 34f)。轴^波管抓連接的該侧的端部上設有模式變換器 軸外°^ 34f^33?a具有筒狀的同軸外導體342,以及沿著該同 =卜导m 342的中心線配置的同軸内導體34卜同軸内導體34] 固定在槽孔板331的中心上。另外,介電^ ^ 的被/皮入射邻内嵌於同軸導波管337a。 14 ⑧ 【0036】 201240185 另外’ CVD裝置3具備控制⑽裝置3的夂姐 器350。程序控制器350連接使用者八的σ構造部的程序控制 鍵盤與顯示器等構件所構成,鍵盤可使用f介面351由 置3的指令,顯示器可顯示⑽|置 ^官理者管理CVD裝 控制器350連接記憶部352,記憶部^乍狀況。另外,程序 控制實現在OT)裝置3執行各種處理的控U了以程序控制器350 理條件等貧料的程序控制程式。程’以及記錄有處 取對應使用者介面351的指示的任從記憶部352讀 在程序控制器350的控制下,使‘制程式並執行之, =卿成裝置3G亦與Μ 彳的處理。 【0037】 攻褒置3具有同樣構造。The Sl0t Antenna; leg type device has a gas-tight and grounded "shovel-like processing chamber 301. The processing chamber 301' is, for example, a slab having a circular opening portion 31 at a central portion. The annular bottom wall 3 and the side wall provided around the bottom wall 301a, and the upper portion is formed with an opening. Alternatively, quartz, A-, etc., may be provided around the inner periphery of the processing chamber 301. [0027] An annular gas introduction member 315 is provided on the side wall of the processing chamber 301, and the gas introduction member 315 is connected to the processing gas supply system 316. The gas introduction member 315 is disposed, for example, in a shower curtain shape. The predetermined processing of the processing gas supply system 316. The gas is introduced into the processing chamber 301 through the gas introduction member 315. The processing gas can be selected according to the type and content of the plasma treatment. For example, in the case of forming a SiN film by plasma CVD, 'cerane (SiH4) gas can be used, A gas such as ammonia gas (N2), etc. Further, on the side wall of the processing chamber 301, a transfer port for loading or unloading the glass substrate 11 between the transfer modules 26 and 28 that the CVD device 3 is obsessed with is provided. 32 5. The opening and closing gate valves 326 and 356 of the delivery port 325 and the delivery port 355 are delivered 12 8 201240185. The bottom wall 3〇1a of the processing chamber 301 is provided with a bottomed cylindrical shape projecting downward from the opening 3 Exhaust chamber 311. In the exhaust chamber 311, there is an exhaust pipe 323 'exhaust pipe 323 and a ventilating device equipped with a high-speed vacuum pump. The exhaust device 324 operates to allow the processing chamber 3 〇 1 gas to pass through the exhaust The tube 323 is discharged. If so, the treatment === can be depressurized to a predetermined degree of vacuum, for example, 133 133 Pa. The inner same speed [0029] is in the bottom of the exhaust chamber 311 *, by the like, the ceramic is vertical In the front end of the remaining member, the outer edge of the 302 〇 ^ / J302 is used to hold the glass substrate. [0030] The opening formed by the annular S ^ portion is provided along the surrounding portion. The sulfur support portion 327. The dielectric member is provided on the support portion 327 through the sealing member 3, for example, a disk-shaped dielectric window 328 made of quartz or ruthenium, and is permeable to microwaves. 0031] On the upper side of the dielectric window 328, the opposite sample is torn to the surface of the dielectric body. It is composed of a conductor, such as a hole 332, which forms a predetermined figure. A plurality of microwave radiation groove wave radiation grooves i'U兕 are interposed and have two/in and 卩, and the slot plate 331 constitutes an RLSA antenna. According to the microwave wavelength ^ radiation slot 3 2 == [0032] 201240185 t number of dielectric plates 333 face each other in contact with the square disk portion: in the dielectric plate portion of the plate = dielectric portion from The circumference of the hole portion is slightly sag with respect to the dielectric disk (4) = [0033], the top surface of the _^ 301 is covered with the slot plate 331 and the dielectric plate 333, and δ is set again. A disc-shaped protective cover 334.葚^ ^ ^ ^ ^ ^ ^ ^ Made of stainless steel and other metals. The processed $=== is sealed by the sealing member 335. [0034] However, the inside of the water ί ί 334 forms a cover-side cooling water flow path 334a, allowing the cold body ΪΪ 2 Ϊ water flow path _ to circulate, and the slot plate 331 , dielectric body = ground & The 333 'guard cover 334 is cooled. In addition, the center of the upper wall of the protective cover [0035] is formed with an opening D portion 336 having a distance 336 from the opening portion 336 of the protective cover 334. =: A rectangular guide that is stretched and has a rectangular cross section. The microwaves of the microwave generating device 339, for example, the frequency microwaves, are transmitted to the slot plate 331 through the waveguide 337. In addition, the frequency of the skin can also be 8.35GHz, h, 915, etc. Rectangular guide wave 34f). The end portion of the side of the shaft and the tube is connected to the shaft of the mode converter, and has a cylindrical coaxial outer conductor 342, and is disposed along the center line of the same The coaxial inner conductor 34 and the coaxial inner conductor 34] are fixed to the center of the slot plate 331. In addition, the dielectric/^ is incident on the coaxial waveguide 337a. 14 8 [0036] 201240185 In addition, the CVD apparatus 3 is provided with a device 350 for controlling (10) the device 3. The program controller 350 is connected to a program control keyboard and a display component of the sigma structure of the user's eight. The keyboard can be set by the f interface 351, and the display can display (10) | The 350 is connected to the memory unit 352 to check the status of the memory unit. Further, the program control realizes a program control program that performs various processes in the OT) device 3, and a poor program control program such as the program controller 350. The program 'and the optional memory unit 352 that records the instruction corresponding to the user interface 351 is read under the control of the program controller 350, and the program is executed and executed. [0037] The attack device 3 has the same configuration.

^單説明如以上構成之有機EL 先,透過裝载器21及LL22將預弈扁置2的動作。首 =基板η搬入成膜裝置二^有陽極層na的 形成有機EL零件12。接著,裝置=在玻璃基板11上 成陰極層12g。接著,利 24廷入電極形成裝置25,形 -密封膜形成聚置27,利用第} 璃基板11依序搬運到第1 耐透紐“暫在由第1密封膜確保了 待暫_封體102 :積體,P 29之後,例如等 搬運至各SiN膜形成、 里t,視吩機利用上述搬運裝置 體⑽搬入SiN膜器61 *⑽將暫時密封 封膜14。 烕裝置30,於暫時岔封體102上形成第2密 【0038】 膜厚為5=m以下’顧_。第2密封 分左右的時間,但是本H1 f時’ 1個有機EL零件需要40 —疋本貝施態樣中,使用複數個SiN膜形成襞置 15 201240185 30約略同時形成SiN膜,故 [實施態樣2] 顯示元件的有機EL元件 同符號以省略詳細朗。a ^中’。圖2相_部分則附上相 時密ί第6==體/3,與有機el元件取的暫 密封膜係由第1無機膜i二第2層所構成、。在严,對第1 由無機材料所構成;第丨有機 H15所構成(第1無機膜13 進 了舉出叙化nc:Hx#。以下,對 材科’ ί之15係作為碳化氫並以分子細&= c4h,ch,c2h2 t i 製造有機EL元件104時,首先 ’ 層11a的玻璃基板u上形成L ^ 不,,成有陽極 在形成有陽極層lla的玻璃A你 ·^牛12之後,如圖5B所示, 形成第1無機膜】3。進而如^ \ =EL零件12的表面上 第mi5,藉此得到暫時密封體不 103無機膜13上形成 -個例子可舉出:在第i益播 U寻不。又疋適备厚度。作為 M0咖’第1有機膜15由石蠛所構成=== i 16 ⑧ 201240185 lOOOnm。 【0042】 而如圖5D所示,在暫時彳技 (碳化氫膜)15上,形成作暫時密封體1〇3的第1有機膜 第2無機膜16,藉此得到有饮封膜的例如由SiN膜所構成的 【0043】: 成乩元件104° 圖6係本發明實施鲅楛 例之示意方塊圖。圖中,鱼?機虬兀件製造裝置201的構造 略詳細說明。另外,在RH_部分則附上相同符號以省 器61及LL62(以下相同)。’省略了第2密封膜形成部的裝載 將由中’第1麵形成裝置.27,係 所椹成構成的SlN膜形成裝置3、薦、由落料詈 ==Γ:;裝置5直列配置所構成。與有機⑶ 厭由Pb u成哀置27所付之暫時密封體1〇3,取出至位於大气 ^_^=_部2_日衡之後’分別搬運二 【0044】 圖7係表示碳化氫膜形成裝置(蒸鑑裝置)5的一構造例之 丨面圖。蒸絲置5具_練納玻板u,並在 板11進行第1有機膜(碳化氫膜)15的蒸鍍、重轉理以及 向的ΐίί^ί Γ由Γ室5Q1 ’形,搬運方向作為長邊方 T工長方胆形狀,由鋁、不銹鋼等材質所構成。在處理室5讥 =長邊方向兩端側的側面上,設有用來將玻璃基板丨丨搬運至處理 室5〇1的内部或外部的搬入口 511、送出口 515,並利用閘閥512、 516使搬入口 511、送出口 515開啟或閉合。在處理室5〇丨的適當 位置設置排氣管513’排氣管513與包含高速真空泵在内的排氣^ 置514連接。使排氣裝置514運作,將處理室5〇1内部 '^ 定壓力,例如10¾。 既 【0045】 17 201240185 在處理室501的底部設置了搬運萝筈 理室5(U的玻璃基板U。運被送入處 沿純邊方向設置的?丨導轨,以及受到^二=1的底部 ;方向亦即該長邊方向移動的移動構===, f以水平方式支持玻板U的支持台咖。在H二。^ ,其力姻加熱器、冷輯u 線性馬達而進行移動。 ♦口⑽3 了猎由 【0046】 柄严的ί部,於搬運方向約略中央部位,設置了基 ίΙΐΓ^ ^ : L,成第有機膜15的瘵鍍頭541 ;對玻璃基板11昭射红外 所及形i的/其1^膜15軟化或是溶解敝^ 的硬化處ϊ=3照射電子束或是紫外線以使碳化氫硬化 i i卜樣/ ’係例示了進行第1有機膜15的墓鑛、 重広處理以及硬化處理專所有處理的裝置,惟亦可將第、·、 機膜15的蒸鑛的蒸錢裝置,進行重炼處理的重 進行硬化處理的硬化處理裝置個別單獨設置。处衷置以及 而並不限定於在第1有機膜15的蒸鑛後 形。但是,對第i有機膜15施以重溶處理時,由: 所以在產生缺陷部時可將顧蓋,可在該第丨 陷地形成第2無機膜16,因此為較佳的。 頌15上4缺 【0047】 崧鍍頭541係將通過輸送管受到輸送的由石壤 氫材料的蒸氣向處理室5G1所收納的玻璃基板21 = 構的 -頭5透過輪送管與配置在處理室5。1的外部的蒸氣產生部5文 連接。崧氣產生部545具備例如不銹鋼製的容器以及配置在 内部的加熱機構。加熱機構設有可收納碳化氫材料的容琴: 用電源供給電力對碳化氫材料進行加熱。石炭化氫材料的二熱,可 18 ⑧ 201240185 加熱。如此’對加熱機構内部 容器與對坡璃i板;;3m,以,生碳化氫材料的蒸氣。另外’ 構成的搬運氣二的咖h性氣體,例如氬(Ar)等稀有氣體所 透過輸送管供仏到·’運乳體一起從蒸氣產生部545 中設置了用來在搬運氣體供給管以及輸送管的途 調整閥Λ供給量的流量調整閥544、546。流量 作受到後她5^^。細_、546的開閉動 【0048】 台二ΪίίΞ ίίΤ紅树燈’其以紅外線因為例如支持 f i ;:ife 11 5 EL 12 源連接,電力供給外線燈與電力供給電 有機EL零件^不^化有顧15加熱到軟化或是炫解且 15進f加熱的麵鱗,以取代紅外i照射頭U料1有機膜 [0049] M ^ 硬化處理頭543具備電子搶,其以電子束 11 f 置迅子搶’電子杨的動作受到程序控制 ^万,配 UV硬化特性的碳化氫材料形成第=使 亦可使硬化處理頭543具備可對玻璃基板Π照射卜線 201240185 燈 【0050】 另外,蒸鑛褒置5具備控制基錄裝詈^ & 控制器55〇。程序控制器550與步驟構造部位的程序 而可輸入指令的使用者介面551連理蒸難置5 記憶部552連接,其儲存了可麻規炉另外,程序控制器550與 執行各種處理的控制程式,器550控繼錢裝置5 ^程式。程序控制器550根據使用者介 ',條件資义的程序控 讀取任意的程序控制程式並執行之 ^曰不從冗憶部552 使蒸鑛裝置5進行所期望的處理。知序&制器550的控制下, 【0051】 ㈣卜’在此’係對玻璃基板11 *到搬運的例子進行銳明,推 m帚σ 503固定並使基板處_504相對於玻璃基板 【0052】 15的====第1有機膜 =3以電漿_成非晶碳_^_== 因而可將非晶碳的形成與第1有機膜15的硬化一|進=的電子 形二樣Γ雖說明了將已形成的碳化氮膜硬化之情 或炫是,已硬化的碳化氫臈能更加抑制因軟化 —的缺陷部及水分浸入’因此為較佳的。 形成ί EL元件製造裝置201中,利用第1密封膜 寸到有機EL零件12被第1無機膜13及第1有機膜 ,密封體⑽。利用⑽將該暫時密封體1G3自減 封二1nq出+至位於大氣壓空間内的暫時密封體保管部29。暫時密 狀Ϊ下暫時幾膜13及第1有麵15確保了耐透濕性的 暫日禮封體保管部29之後,視時機藉由上述搬 搬運至各SlN膜形成裝置30,於各暫時密封體103上形成 20 ⑧ 201240185 第2無機膜16,得到有機肛元件104。 【0054】 々如上所述第1無機膜13的膜厚為l〇〇nm以下,很薄。另外, 第1有機膜15的成膜速度雖視峻化氮材料的 形成例如500⑽的厚度時,亦可短時間成膜。第i有機 =CH田Μ時,係使用與圖4的副膜形成裝置相同的CVD装置為 以Q16、CEL、(¾等峻化氫氣體作為處理氣體來進行成膜, 為的將近10倍’可與碳化氫膜同樣在 可因摩右㈣既疋時間内㈣透濕性’故在暫時保管後, 故可使第二丄由於弟1密封膜為2層構造’ 第第1密封膜為單層的實施態樣1之 更缚。因此’可提升全體產出。 [實施態樣3] 例之明::態樣3之有機EL元件製造裝置202的構造 略詳細^明。@中’與圖3相同的部分則附上相同符號以省. —有機EL元件製造裝置2〇2包含:作為第2宓 罢 ΐ裝==倾管的暫時密:體:搬 膜形成裝置3=置使_2、34依序搬運至⑽ 作為ί 運為單層的 在厚度方向依序逐次以1/3量形成^ 封體102時,係 f斤構成的第丨無機膜13上,以成厚,2二。,在由灿 成的第2無機膜14時,以各SiN 形成由制膜所構 連著搬運複數的暫時密封體⑽,賴略咖nm,接 【0056】 201240185 202於暫時密封體1。=面 = 為2層構-暫時 而第2密封卿輕置,並秘 之t月形,亦可直列配置其他成膜、直=配置SiM膜形成裝置 膜形成裝置)。 、、置(a CHx膜形成裝置、碳化氫 【0057】 [實施態樣4] 圖,舰湖5之側剖面 造例之示意方塊圖圖之丨有,元件製造裝置咖的構 以省略詳細說明。 。 相同的部分則附上相同符號 元件=樣之亀 2 17 ^ 2 18 3 ^ rt2T,m$ 105 ^ 13, f 2''^1 ; el 3B > T以作為第2密封膜形成裝置^ 8 ' = 形成裝置 :密=部29所暫時保管的暫時二 _成裝置36,使用TM37、39依序搬運至j ΓΗ二至㈣ 以及⑽膜形成裝置4〇。以下,置38、 裝置表示為a_CHx。 T為了圖不方便’將^CHX膜形成 本實施態樣中,令第2密_為3層構造,故更加提升有機^ The description will be given to the operation of the organic EL as described above, in which the pre-game is flattened by the loader 21 and the LL22. The first = substrate η is carried into the film forming apparatus 2 and the anode layer na is formed to form the organic EL part 12. Next, the device = a cathode layer 12g on the glass substrate 11. Then, the electrode is formed in the electrode forming device 25, and the shape-sealing film is formed into the polymerization unit 27, and the first glass substrate 11 is sequentially conveyed to the first resistance-resistant core. "The first sealing film is secured by the first sealing film. 102: Integral, after P29, for example, it is transported to each SiN film to form, and the display device is loaded into the SiN film device 61*(10) by the transfer device body (10) to temporarily seal the sealing film 14. The device 30 is temporarily suspended. The second seal is formed on the seal 102. The film thickness is 5=m or less, and the second seal is about the time. However, in the case of the H1 f, one organic EL part requires 40. In the sample, a plurality of SiN films are used to form the device 15 201240185 30. The SiN film is formed approximately at the same time. Therefore, the organic EL device of the display element has the same reference numeral to omit the detail. A ^ 中 '. Then, the phase sealing film 6 is the same as the third layer, and the temporary sealing film taken from the organic EL element is composed of the second layer of the first inorganic film i, and is composed of the first inorganic material. The first organic film 13 is composed of the first organic film 13 (the first inorganic film 13 is described as nc:Hx#. Hereinafter, the 15th class of the material family is used as the hydrocarbon. When the organic EL element 104 is manufactured by molecular fineness &= c4h,ch,c2h2 ti, first, L ^ is not formed on the glass substrate u of the layer 11a, and the anode is formed in the glass A having the anode layer 11a. After that, as shown in Fig. 5B, the first inorganic film 3 is formed. Further, the mi5 on the surface of the EL member 12 is obtained, whereby the temporary sealing body 103 is formed on the inorganic film 13 as an example. : In the i-th benefit broadcast U can not find. Also 疋 suitable thickness. As M0 coffee 'the first organic film 15 is composed of sarcophagus === i 16 8 201240185 lOOOnm. [0042] And as shown in Figure 5D, The first organic film second inorganic film 16 as the temporary sealing body 1〇3 is formed on the temporary sealing technique (hydrocarbon film) 15, thereby obtaining a filling film, for example, a SiN film.乩 Element 104° Fig. 6 is a schematic block diagram of an embodiment of the present invention. In the figure, the structure of the fish 虬兀 制造 manufacturing apparatus 201 is described in detail. In addition, the same symbol is attached to the RH_ portion to save the device. 61 and LL62 (the same applies hereinafter). The mounting of the second sealing film forming portion is omitted, and the first surface forming device 27 is formed. The formed S1N film forming apparatus 3, recommended, by the blanking 詈 == Γ:; the device 5 is arranged in an in-line arrangement. The organic (3) nuisance is made of Pb u, and the temporary sealing body 1 〇 3 is taken out, and is taken out to the location. Atmosphere ^_^ = _ part 2_ after the balance of the 'transport separately two [0044] Fig. 7 is a top view showing a structural example of the hydrocarbon film forming apparatus (vaporizing apparatus) 5. The steaming wire is provided with 5 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ It is made of a material such as aluminum or stainless steel as the long-side square T-shaped square. In the processing chamber 5 讥 = the side surfaces on both end sides in the longitudinal direction, a transfer port 511 and a delivery port 515 for transporting the glass substrate 内部 to the inside or the outside of the processing chamber 5〇1 are provided, and the gate valves 512 and 516 are used. The carry-in port 511 and the delivery port 515 are opened or closed. An exhaust pipe 513' is disposed at an appropriate position in the processing chamber 5'', and the exhaust pipe 513 is connected to an exhaust pipe 514 including a high-speed vacuum pump. The venting device 514 is operated to set a pressure inside the processing chamber 5〇1, for example, 103⁄4. [0045] 17 201240185 At the bottom of the processing chamber 501, a glass substrate U for transporting the scorpion processing chamber 5 (U is placed in the direction of the pure side, and is subjected to ^2=1). The bottom direction; that is, the moving structure in which the longitudinal direction moves ===, f supports the support table of the glass plate U in a horizontal manner. In H 2 . ^ , its force heater, cold series u linear motor moves ♦ mouth (10) 3 hunted by [0046] shank strict ί, in the direction of the transport about the central part, set the base ΙΐΓ ^ ^ : L, into the first organic film 15 瘵 plating head 541; on the glass substrate 11 The shape i or the film 15 softens or dissolves the hardened portion of the 敝^ 3=3 illuminates the electron beam or the ultraviolet ray to harden the hydrocarbon ii sample/' exemplifies the tomb of the first organic film 15 The equipment for the treatment of the ore, the heavy-duty treatment, and the hardening treatment may be separately provided separately from the steam-steaming device of the first, the, and the machine film 15 and the hardening treatment device for the hardening treatment. The present invention is not limited to the post-steaming shape of the first organic film 15. However, When the i-th organic film 15 is subjected to the re-dissolution treatment, it is preferable that the second inorganic film 16 can be formed in the first depression when the defect portion is generated. The crucible plating head 541 is disposed in the processing chamber 5 by a glass substrate 21 in which the vapor of the stone-hydrogen material is transported through the transport tube to the processing chamber 5G1. The external steam generating unit 5 is connected. The helium gas generating unit 545 includes, for example, a stainless steel container and a heating mechanism disposed inside. The heating mechanism is provided with a accommodating body capable of accommodating a hydrocarbon material: a power source for supplying power to the hydrocarbon material Heating. The second heat of the charcoal hydrogen material can be heated by 18 8 201240185. So 'the inner container of the heating mechanism and the plate i; 3m, to, the vapor of the raw hydrocarbon material. The other 'construction of the two gas A gas such as a argon gas, such as argon (Ar), is supplied through the transfer pipe to the 'transfer body. The steam generating unit 545 is provided with a regulating valve for transporting the gas supply pipe and the transfer pipe. Supply amount flow adjustment valve 544 546. After the traffic is subject to her 5^^. _, 546 opening and closing [0048] Taiwan two Ϊ ίίΞ ίίΤ mangrove lights 'infrared because of the support for fi;:ife 11 5 EL 12 source connection, power supply outside lights And the electric power supply of the organic EL part ^ does not have the 15 scale heating to soften or dazzle and 15 into the f heating surface scale to replace the infrared i irradiation head U material 1 organic film [0049] M ^ hardening treatment head 543 With electronic robbing, the electron beam 11 f is set to rob the 'electronic Yang's action by program control ^, with the UV hardening characteristics of the hydrocarbon material forming the second = so that the hardening treatment head 543 can be equipped with a glass substrate Illumination line 201240185 Light [0050] In addition, the distillation unit 5 is provided with a control base unit &^ & controller 55〇. The program controller 550 is connected to the user interface 551 of the step configuration portion and the user interface 551 to which the command is input, and the memory unit 552 is connected, and the program controller 550 and the control program for executing various processes are stored. The device 550 controls the money device 5 ^ program. The program controller 550 reads and executes an arbitrary program control program based on the user's program conditional control program, and does not cause the steaming unit 5 to perform desired processing from the redundancy unit 552. Under the control of the controller & 550, [0051] (4) 卜 'here' sharpens the glass substrate 11 * to the example of transport, push m 帚 σ 503 fixed and the substrate _ 504 relative to the glass substrate ====15th organic film=3 is a plasma_formed amorphous carbon_^_== Thus, the formation of amorphous carbon and the hardening of the first organic film 15 can be performed. Although it is described that the formed carbon nitride film is hardened or smashed, the hardened hydrocarbon hydrazine can further suppress the defect due to softening and moisture immersion, and thus it is preferable. In the EL element manufacturing apparatus 201, the first sealing film is applied to the organic EL element 12 by the first inorganic film 13 and the first organic film, and the sealing body (10). The temporary sealing body 1G3 is self-reduced and sealed by (10) to the temporary sealed body storage portion 29 located in the atmospheric pressure space. In the temporary densely-formed temporary temporary film 13 and the first surface 15 to ensure moisture permeability, the temporary sealing body storage unit 29 is transported to each of the S1N film forming apparatuses 30 by the above-described time. A second inorganic film 16 of 20 8 201240185 is formed on the sealing body 103 to obtain an organic anal element 104. As described above, the film thickness of the first inorganic film 13 is not more than 10 nm, and is very thin. Further, when the film formation rate of the first organic film 15 is, for example, a thickness of 500 (10), the film formation rate can be formed in a short time. In the case of the i-th organic=CH field, the same CVD apparatus as that of the sub-film forming apparatus of FIG. 4 is used to form a film by using Q16, CEL, or a hydrogen gas such as 3⁄4 as a processing gas, which is nearly 10 times. In the same manner as the hydrocarbon film, it can be temporarily stored after the (four) time (4), and therefore the second sealing film can be made into a two-layer structure. The embodiment of the layer is more limited. Therefore, the overall output can be improved. [Embodiment 3] Example: The structure of the organic EL device manufacturing apparatus 202 of the aspect 3 is slightly detailed. The same parts in Fig. 3 are denoted by the same reference numerals. The organic EL element manufacturing apparatus 2〇2 includes: as a second 宓 = = = = 暂时 的 的 体 = = = = 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬2, 34, sequentially transported to (10) as a single layer, in the thickness direction, sequentially forming 1/3 of the sealing body 102, which is formed on the second inorganic film 13 of the gram, to be thick, 2 2. When the second inorganic film 14 is formed, a temporary sealing body (10) which is transported by a film formation and formed by a film is formed by a single film, and is connected to [0056] 2 01240185 202 in the temporary sealing body 1. = face = two-layer structure - temporary and the second seal is lightly placed, and the shape of the moon is t-shaped, and other film forming can be arranged in line, straight = configuration of the SiM film forming device film forming device ). And (a CHx film forming device, hydrocarbon [0057] [embodiment 4], the schematic block diagram of the side profile of the ship lake 5, and the structure of the component manufacturing device is omitted. The same part is attached with the same symbol element = 亀 2 17 ^ 2 18 3 ^ rt2T, m$ 105 ^ 13, f 2''^1 ; el 3B > T as the second sealing film forming device ^ 8 ' = forming device: the temporary two-in-one device 36 temporarily stored in the dense portion 29 is sequentially transported to the second to fourth (4) and (10) the film forming device 4 using TM37 and 39. Hereinafter, the device is shown as 38. It is a_CHx. T is inconvenient for the drawing. The ^CHX film is formed in this embodiment, so that the second dense_ is a three-layer structure, so the organic is further enhanced.

(D 22 201240185 EL元件105的耐透濕性。 【0059】 係製造有機EL元件1G5之另一有機EL Μ t _ 的構造例之示意方塊圖。圖中,鱼 什表w裝置204 號以省略詳細說明 與圖1〇相同的部分則附上相同符 f機EL元件製造裝置204包含:直列配 4卜及心CHX膜形成裝置43,以作為第2 裝置 例^。利用搬運裝置將暫時密通保管部29 封Ji〇2取出,搬運至SlN膜形成裝置41,形费 IB : , TM42 SlN ^ 41,^ Ϊ有ί 件製造裝置204中,可較有機此元件製造裝 置203減少苐2密封膜形成裝置的個數。 戒 【0060】 係製造有機EL元件1()5之另一有機虹元件製造裝置 ===塊㈣巾,細㈣崎_上相同符 為了置205包含:3個SiN膜形成裝置4〇,其 ^ 了形成第2⑨封膜最上層的第3無機膜19,使暫時密封體分 α-CHx膜形成裝置38搬運而來。另外,此SiN膜形 的個數並不限於3個。 mu 因此,有機EL元件製造裝置2〇5,可與有機EL元件製造 2同樣地使用複數個SiN膜形成裝置4〇,約略同時形成⑽膜。 二如即使在分別以100〜300nm、1〇〇nm、8〇〇nm、1〇〇〇卿的厚度 ^成第1無鑛13、第2無機膜17、第2碳化氫膜18、第3無機 此19等情形’ $可增加第3無機膜丨9每單位時間 升全體產出。 捉 【0061】 圖13係製造有機EL元件1〇5之另一有機EL元件製造裝置2〇6 23 201240185 ===顏。圖中’與圖則目_分_上相同符 U*滅弟2封膜取上層的第3無機膜19而吉而⑽要 另外^匕s趣形成裝置40的個數並不限於3個。直歹J配置。 有機EL το件製造裝置2〇6中, 裝置43而形成有第2碳化氯膜18的暫時密封體=QL卿成 膜形成裝置47,使用TM48、50依序搬運至SiN膣般運至SlN 51。因此。可在厚度方向逐次以成裝置49、 以厚度l_nm形成第3無機膜19時,=::=9。例如 約略33〇咖,接連著搬運複數的暫 广=成農置成膜 無機單位時間的成臈量,提升全:出可增加第3(D 22 201240185 Resistance to moisture permeability of the EL element 105. [0059] A schematic block diagram of a structural example of another organic EL Μ t _ for manufacturing the organic EL element 1G5. In the figure, the fish table w device 204 is omitted. In the same manner as in FIG. 1A, the EL device manufacturing apparatus 204 includes the in-line matching device and the core CHX film forming device 43 as a second device example. The temporary device is temporarily stored by the carrier device. The portion 29 Ji 〇 2 is taken out and transported to the SlN film forming device 41, and the IB: , TM42 SlN ^ 41, ί ί 制造 制造 制造 制造 , , 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封The number of devices. [0060] Another organic laser device manufacturing device for manufacturing organic EL device 1 () 5 ===block (four) towel, fine (four) saki _ upper identical for 205 inclusion: 3 SiN film formation In the apparatus 4, the third inorganic film 19 which is the uppermost layer of the 29th sealing film is formed, and the temporary sealing body is transported by the α-CHx film forming apparatus 38. The number of the SiN film shapes is not limited to three. Therefore, the organic EL element manufacturing apparatus 2〇5 can be manufactured with the organic EL element 2 A plurality of SiN film forming apparatuses 4 are used for the sample, and the film of (10) is formed approximately at the same time. For example, even if the thickness is 100 to 300 nm, 1 〇〇 nm, 8 〇〇 nm, and 1 〇〇〇, respectively, the first The case of the ore 13, the second inorganic film 17, the second hydrocarbon film 18, the third inorganic material 19, etc. can increase the total output per unit time of the third inorganic film 丨9. [0061] Fig. 13 is the manufacture of organic Another organic EL element manufacturing apparatus of EL element 1〇5 2〇6 23 201240185 ===颜. In the figure, 'the same as the figure _ minute _ the same character U* 灭二 2 film to take the upper third inorganic film 19 and Kyrgyzstan (10) The number of the devices 40 to be formed is not limited to three. The arrangement of the J is arranged. In the organic EL τ ο manufacturing device 2 〇 6, the device 43 is formed with the second carbon oxychloride film 18 Temporary sealing body = QL qing film forming device 47, which is transported to SiN 依 in the same manner as TMN, 50, and is transported to S1N 51. Therefore, the third inorganic film 19 can be formed in the thickness direction by the device 49 at a thickness of l_nm. When, =::=9. For example, about 33 〇 , , , , , , , , , 接 接 接 = = = = = = = = = = = = = = = = = = = = = = = = = 3

Qnn另外,在本貫施態樣中,雖說明了使用右纟# ρΤ _ 203〜206於暫時密封體搬了ϋ有枝EL赠製造裝置 之情形,但並不限於此,亦可於第=所構成的第2密封膜 密封體.103的表面形成由3層 2 ,所構成之暫時 密封膜形成裝置27及第2宓封胺报2捃封艇。亦即,第j 態樣中所說明之情形。 、7扁置的構造並不限於本實施 【0063】 [實施態樣5] 造例之示意方塊圖。圖中,與圖製造裝置207的構 以省略詳細說明。 相同的部分則附上相同符號 本實施態樣之有機EL元件106,金士 _ 、105不同,第2密封膜由、2 /戶^表1、4之有機 有機EL元件1〇6,在有機乩 曰所構成。 =的第1無機膜13,得到暫時密二12=表面形成作為第1密 的表面依序形成第2有機膜70、02 ;於該暫時密封體102 弟2無機膜71,得到有機乩 24 201240185 '件⑽。在此說明第1無機膜…第2無機膜71由SlN膜所❹ 第2有機膜70由a-CHx所構成之情形。 由SlN膜所構成, 【0064】 h 有機EL元件製造裝置2〇7包含:直 置44、以及SiN膜形成裳置46,以作為第2密成裝 個例子。利用搬運裝置將暫時密封抑㈣^封膜形成裝置的-密封體102取出,搬運至a_CH膜形.y1所暫時保管的暫時 至Si請形成裝置46。 CHx膜形成裝置44,使用TM45搬運 【0065】 另外,在本實施態樣中,由 製造時間較實施態樣4的有機EL元件^豆膜之層數為2層,故 另外’在本實施態樣中,雖說明了 ^暫時密封體102的表面形成由2層所構有機的 造裝置 形,C亚不限於此,亦可於第玉 ^勺第2岔封膜之情 ,103的表面形成由2層所構成所f成之暫時密封 Ϊ形成裝置27及第2密封膜形成裝膜。亦即,第1密封 中所說明之情形。 、構k亚不限於本實施態樣 【0066】 [實施態樣6] 之*意方塊圖。圖中,元件製造裝置 相同符,以省略詳細說明。 、圖1、3相同的部分則附上 _ #本實施態樣之有機EL元件107,盘 -^ 裝置$鮮«所構成之A! ^=^保管部29所暫時保管的暫利用搬運裘置將暫 "成4置52 ’形成第2麵膜72。=體102取出,搬運至幻 ,為了圖示方便,在圖 25 201240185 中將A1卿成農置標記為Ai。 【0068】 --2 - 密封則分左右細,麵於暫時 即使在第2密封膜自合ώ A】 上層包含由SiN所構成的無機膜 ^的無機膜之情形,亦與最 層構造及3層構造,令最相同’可令第2密封膜為2 EL ^ 1〇8 =0=構造例之示意方塊 有:EL元件製造 附上相同符號以省略詳細說明。T /、圆1、3相同的部分則 有機EL元件製造裝置2〇9包含: 置幻、以及Α1膜形成裝置55 ff α膜形成裝 用搬運農置將暫時密封體保管部川作上弟/,:封膜形成裝置。利 取出’搬運至α-CIL膜形成衆i 53,开暫時密封體102 贿^至A1膜形成裝置55,形成ft無機^膜73。而使用 膜异的一個例子,可例嚴屮筮 、4 機膜^為咖咖、第2無膜13為^、第2有 【0070】 'nm 圖20係顯示具有3層構造的第2宓 =剖面圖’圖21係製造該有機EL元*Vl09之右^EL元件109 裝置210的構造例之示意方塊圖。圖中,盥有機EL tl件製造 附上相同符號以省略詳細說明。 · 、3相同的部分則 有機EL元件製造裝置21〇包含:吉 5ΉΗχ膜形成裝置58、以及 丄二的⑽膜形成裝置 ,膜形缝置。搬職置將暫時以作為第2 官的暫時密封體⑽取出’搬運至SiN $。。29所暫時保 所構成的第2無機膜75。而利用TM57搬運^置^形成由si LHx膜形成裝置 26 ⑧ 201240185 膜76。再使用®9搬運至A1膜形伽, 述’由a_CHx膜所構成的第2有機膜76,及由Μ所 【0071】 以作Γ第卜2ίί=ίί Γ雖說明了形成由A1所構成的無機膜In addition, in the case of the present embodiment, although the case where the right seal # Τ _ 203 to 206 is used to move the temporary seal body to the ϋ 枝 EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL The surface of the second sealing film sealing body 103 which is formed is formed of a temporary sealing film forming device 27 composed of three layers 2 and a second sealing agent. That is, the situation described in the jth aspect. The structure of the 7 flat arrangement is not limited to this embodiment. [0063] [Embodiment 5] A schematic block diagram of an example. In the drawings, the configuration of the drawing manufacturing apparatus 207 will be omitted. The same parts are attached with the same reference numerals to the organic EL element 106 of the present embodiment, and the gold seals _ and 105 are different, and the second sealing film is composed of 2/households, and the organic organic EL elements of the table 1 and 4 are in the organic It is composed of 乩曰. The first inorganic film 13 of the first inorganic film 13 is obtained, and the second organic film 70 and 02 are sequentially formed as the first dense surface, and the inorganic film 71 is obtained from the temporary sealing body 102 to obtain the organic germanium 24 201240185 'piece (10). Here, the first inorganic film...the second inorganic film 71 is composed of an S1N film and the second organic film 70 is composed of a-CHx. It is composed of an S1N film, and the organic EL element manufacturing apparatus 2A7 includes a straight portion 44 and a SiN film forming skirt 46 as a second dense package. The sealing body 102 of the sealing film forming apparatus is taken out by the conveyance device, and conveyed to the temporary formation device 46 temporarily stored in the a_CH film shape. y1. The CHx film forming apparatus 44 is transported by using TM45. [0065] In the present embodiment, the number of layers of the organic EL element film according to the fourth embodiment is two layers, so that the present embodiment is In the sample, it is explained that the surface of the temporary sealing body 102 is formed by two layers of organic devices, and the C is not limited thereto, and the surface of the first layer of the first sealing film may be formed. The temporary sealing crucible forming device 27 and the second sealing film formed by the two layers are formed into a film. That is, the case described in the first seal. The configuration is not limited to the present embodiment [0066] [Implementation 6]. In the drawings, the component manufacturing apparatuses are the same, and the detailed description is omitted. In the same parts as in Figs. 1 and 3, the organic EL element 107 of the present embodiment is attached, and the disk-^ device is made up of A: ^=^ The temporary storage device temporarily stored in the storage unit 29 The second mask 72 is formed by temporarily setting "4" to 52'. = Body 102 is taken out and transported to the illusion. For the convenience of illustration, A1 Qingcheng Farming is marked as Ai in Figure 25 201240185. [0068] --2 - The seal is divided into right and left, and the surface is temporarily bonded to the second sealing film. A] The inorganic film containing the inorganic film composed of SiN in the upper layer, and the most layer structure and The layer structure is such that the same is the same as the second sealing film 2 EL ^ 1 〇 8 = 0 = a schematic block of the configuration example: the EL element is manufactured with the same reference numerals to omit the detailed description. In the same part of the T/, the circle 1 and the third, the organic EL device manufacturing apparatus 2〇9 includes: a phantom, and a 膜1 film forming apparatus 55 ff α film forming and mounting, and a temporary sealing body storage unit ,: Sealing film forming device. The ft inorganic film 73 is formed by taking out the 'transported to the α-CIL film to form a temporary sealing body 102 to the A1 film forming device 55. As an example of the use of the film, the case can be exemplified, the film is 4, the film is 2, the film is 2, the film is 2, and the second film is [0070] 'nm. FIG. 20 shows the second layer having a three-layer structure. = sectional view 'Fig. 21 is a schematic block diagram showing a configuration example of the device 210 of the right EL element 109 of the organic EL element *Vl09. In the drawings, the 盥 organic EL tl member is attached with the same reference numerals to omit the detailed description. In the same portion as the third embodiment, the organic EL element manufacturing apparatus 21A includes a film forming device 58 and a film forming device (10), which are film-shaped. The removal will be temporarily carried out to the SiN$ as a temporary seal (10) as the 2nd official. . The second inorganic film 75 composed of 29 is temporarily protected. The TM57 is used to form the film 76 by the si LHx film forming device 26 8 201240185. Then, using the ®9, it is transported to the A1 film-shaped gamma, and the second organic film 76 composed of the a_CHx film is described, and the 【 【 [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ Inorganic film

Ai2〇报L f ?至 u合金來形成無機膜。又,亦可使用 EL “並;會=二:㈣祕形成無機膜時’所得之有機 元件製造裝置 膜作為上層之有以由αι所構成的無機 封膜22C 情形,但並不限於此,亦可於第1密 的益機膜^卜之暫啦龍1G3的表面形成対纟A1所構成 U幾膜之苐2岔封膜。亦即,第1密封 以再成 觀並不_本實絲二二密 [實施態樣7] 圖 圖22係顯示本發明實施驗7之有機EL元件11Q之側剖面Ai2 reports L f ? to u alloy to form an inorganic film. Further, it is also possible to use the case where the organic component manufacturing apparatus film obtained as the upper layer has an inorganic sealing film 22C composed of α1, but it is not limited thereto. The first film of the U-film formed by 対纟A1 can be formed on the surface of the first dense film of the machine, which is formed by the 対纟A1 film. That is, the first seal is not formed again. Twenty-two density [embodiment 7] FIG. 22 is a side cross-sectional view showing the organic EL element 11Q of the seventh embodiment of the present invention.

81 mtilJ 酯、聚乙慌々^體102所構成。氣體阻障基板81,例如在h ⑽或的%構成的基板79上,形^ 層。 战的“.、機肤80而構成。無機膜可為單層亦可為夕 密封體由由丙烯酸樹脂所構成的黏接層78,使辦护 T〇〇723f面與氣體阻障基板81的基板79背面接合。使暫時 樣中’無需進行成膜,便可容易地密封暫時密封體 27 201240185 102來製造有機EL元件lio。 【0074】 密封以Sf :並將貼合在暫時 在暫時密封體103。 丌了將乳體阻障基板81貼合 形。又,氣體阻障基板的構造並不限於本實絲樣中所說明之情 【0075】 [實施態樣8] 圖。㈣係顯示本發明實施態樣8之有機el元件ΐπ之側剖面 杰笛’之既元件111 ’係在暫時密封體102的第!密封膜η ^ 成第2岔封膜14之後,使上述 =13上形 接合於該第2密封膜14的表面側所禮81猎者黏接層78 使上述的氣體阻障基板81貼合於實施能樣,右J有以下構造: 之第2密封膜14。 、樣1的有機EL元件1〇1 【0076】 拉霄施祕中,已形成第2密封膜14,而且盘氣體am 81接合,故更加提升耐透濕性。 /、孔體阻I1 早基板 同樣地,亦可使氣體阻障基板81蕻 2的有機见元件⑽的第2無機膜16== 層ΐ合/實施態樣 元件105的第3無機膜19上、實施能揭心^祕4的有機EL 第2無機膜71上、實施態樣6的有叮_、有機EL元件的 【0077】 ' 暫時:體轉製钱置所製作的 28 201240185 [性能評價試驗1] 使用本發明的實施態揭*1 作為第1密封膜形成褒置27的的有機既元件製造裝置2,並使用 11上所形成之有機EL零件12^膜^絲置3,在於玻璃基板 ,及未形成第1密封膜 積的關係,評價出耐透濕性大氣壓空間,調查經過曰數與發光面 其結果示於圖24的圖表0囝9/1 氣中經過的日數,縱軸為發光面回奸=表中,橫軸為放置於大 為100%。有機EL零件12备嗯k貝。日數為0時的發光面積 外緣部產生非發光區域,^光^積^匕在有機EL零件12表面的 由圖24可知,在未形成第丨宓 時,發光面積大幅減少;相對山、'13之情形,經過了 3日 形’即使經過了 3曰,發光面積幾乎沒:=第土,膜13之情 厚度為30〇nm之情形,雖然比 =/ /。弟1後封膜13的 的經時減少量稍大,但絲,二_nm之情形’發光面積 1日左右,故第i密封膜13的^^體^部時間通常為 濕性,此乃吾人所思及之。為3〇〇nm即充分確保耐透 第1密封膜13形成於有機EIJ件H將以短時間成膜所得之 耐透濕性。 々件12的表面,因而可得到良好的 【0080】 [性能評價試驗2] 發明的實施態樣2的有機 第1进封膜形成裝置27,關於Siw胺V、二午衣以置201但疋’ 氫膜形成裝置5,而是使用電漿CVDf成裝置3 ’並非使用碳化 直列配置者。在於玻璃基板21 2、夕二a-CHx膜形成裝置呈 藉由SiN膜形成裝置3形成厚戶‘ ^機EL零件12的表面’ 乂与度30〇nm的第丨無機膜(SiN膜)13, 29 201240185 的表面,分別形成厚度500nm、2_nm、 (^CHX膜)15,製作出3種暫時密封體103。 查經i曰的各暫時密封體103放置於大氣壓空間,調 J 二叙光面積的關係,評價出耐透渴性。 氣中圖25的圖表。圖25的圖表中,橫軸為放置於大 為職 ,縱轴為發光面積。經過曰數為0時的發光面積 【0081】 發光f過了 3日時,侧於第1有機㈣的厚度, $面積幾核有減少。又,與圖24 =度 上形成至少严戶為·… 以上確遇了藉由第1無機膜13 耐透ii m的第1有機膜15,因而可得到更良好的 【0082】 以;= 應81 mtilJ ester, Polyethylene panicin body 102. The gas barrier substrate 81 is formed, for example, on a substrate 79 composed of h (10) or %. The composition of the warfare "., the skin 80. The inorganic film may be a single layer or the bonding layer 78 made of an acrylic resin for the evening sealing body, so that the surface of the T〇〇723f and the gas barrier substrate 81 are treated. The back surface of the substrate 79 is joined. The organic EL element lio can be easily manufactured by temporarily sealing the temporary sealing body 27 201240185 102 in a temporary sample. [0074] Sealing is performed with Sf: and is temporarily attached to the temporary sealing body. 103. The emulsion barrier substrate 81 is bonded to each other. Further, the structure of the gas barrier substrate is not limited to the one described in the actual silk sample [0075] [embodiment 8]. In the side view of the organic EL element ΐπ of the eighth embodiment of the invention, the first element 111' of the outer surface of the temporary sealing body 102 is attached to the second sealing film 14 of the temporary sealing body 102, and the above-mentioned =13 upper bonding is performed. On the surface side of the second sealing film 14, the stalker bonding layer 78 is bonded to the gas barrier substrate 81, and the right J has the following structure: the second sealing film 14. Organic EL element 1〇1 [0076] In the zipper, the second sealing film 14 has been formed, and the disk gas am 8 When the bonding is performed, the moisture permeability is further improved. /, the hole resistance I1 is the same as the substrate, and the second inorganic film 16 of the organic barrier element (10) of the gas barrier substrate 81蕻2 can also be laminated/implemented. On the third inorganic film 19 of the sample element 105, the organic EL second inorganic film 71 which can be used for the fourth embodiment, and the organic EL device of the aspect 6 are formed. [0077] ' Temporary: body conversion 28 201240185 [Performance Evaluation Test 1] Using the embodiment of the present invention, the organic component manufacturing apparatus 2 as the first sealing film forming device 27 is used, and the organic EL component formed on the 11 is used. The film was placed on the glass substrate, and the relationship between the first sealing film and the first sealing film was not formed, and the moisture permeability-resistant atmospheric pressure space was evaluated. The number of turns and the light-emitting surface were examined. The results are shown in the graph of FIG. /1 The number of days passed through the gas, the vertical axis is the luminous surface of the retracement = in the table, and the horizontal axis is placed at 100%. The organic EL part 12 is prepared by k. The outer edge of the light-emitting area when the number of days is 0. The non-light-emitting area is generated, and the light-emitting area is formed on the surface of the organic EL element 12 as shown in Fig. 24, and the light-emitting area is not formed when the third layer is not formed. Significantly reduced; relative to the mountain, the situation of '13, after the 3rd shape' even after 3 曰, the luminous area is almost no: = earth, the thickness of the film 13 is 30 〇 nm, although the ratio = / /. The amount of time-dependent reduction of the sealing film 13 of the younger brother 1 is slightly larger, but in the case of silk, the case of _nm is about 1 day, and the time of the first sealing film 13 is usually wet. In view of the above, the moisture permeability resistance of the first EIJ member H formed in the organic EIJ member H in a short period of time is sufficiently ensured at 3 〇〇 nm. [0080] [Performance Evaluation Test 2] The organic first sealing film forming device 27 of the second aspect of the invention is related to the Siw amine V and the second lunch. The hydrogen film forming device 5, but using the plasma CVDf into the device 3', does not use a carbonized in-line configuration. In the glass substrate 21, the second a-CHx film forming apparatus is formed by the SiN film forming apparatus 3 to form a surface of the thicker 'Electrical EL part 12' and a third inorganic film (SiN film) having a degree of 30 〇 nm. On the surface of 29, 2012, the thickness of 500 nm, 2 nm, and (^CHX film) 15 were respectively formed, and three types of temporary sealing bodies 103 were produced. Each temporary sealing body 103 of the investigation was placed in an atmospheric pressure space, and the relationship between the two areas was measured, and the thirst resistance was evaluated. Figure 25 of the gas in the chart. In the graph of Fig. 25, the horizontal axis is placed on the job and the vertical axis is the light-emitting area. The light-emitting area when the number of turns is 0 [0081] When the light-emitting f is over 3 days, the thickness of the first organic (four) is reduced, and the area of several cores is reduced. Further, it is found that at least the strictness is formed in the degree of Fig. 24, and the first organic film 15 which is resistant to ii m by the first inorganic film 13 is surely obtained, so that it is more preferable.

種種類、數量、厚度之第2贫封膜=^性‘刀別形成具有各 =’晴使用複數個同種的成膜P 每單位時間的成膜量增加,可提升因此 ,反貼合在暫時密封體而輕易地者」:可將氣體. 利性^提升全體產出,且提升有機EL7t^^: 【0083】 另外,在前述實施態樣1〜8中,雖說明了將暫時密封體⑽ 201240185 ^ 103暫時保管在暫時密封體保管部29之情形,但 備室。而暫時密封體保管部29或真空預備室並 財之情形’亦可處於乾燥職氣體下。 施態封膜之種類、數量、厚度並不限於實 9 J 2_了使用預先設定配置的各有機EL元件製造梦晉 製造裝置中進此置元件 示元=製1發_製造方法,村_於有機EL元件以外的顯 【圖式簡單說明】 【0011】 圖1係顯示本發明實施態樣丨 _ 之側剖面圖。 < 作為顯不几件的有機EL元件 圖2係有機EL元件製造方法之音 圖3係本發明實施態樣1的有機EL' f ° 示意方塊圖。 為虹凡件製造裝置的構造例之 圖4係當第1密封膜形成骏置The second type of the film of the type, the number, and the thickness of the second type of the film is formed, and the film formation amount per unit time is increased, and the film formation amount per unit time is increased, so that the reverse fit is temporarily It is easy to seal the body": the gas can be used to improve the overall output, and the organic EL7t^^ is improved. [0083] In addition, in the above-described first to eighth embodiments, the temporary sealing body (10) is described. 201240185 ^ 103 is temporarily stored in the temporary sealed body storage unit 29, but the room is reserved. On the other hand, the case where the temporary sealed body storage portion 29 or the vacuum preparation chamber is in the same state may be under the dry gas. The type, the number, and the thickness of the sealing film are not limited to the real one. J J_ The use of each of the organic EL elements in a predetermined configuration is used to manufacture the device. BRIEF DESCRIPTION OF THE EMBODIMENT OF THE INVENTION [0011] FIG. 1 is a side cross-sectional view showing an embodiment of the present invention. <Important organic EL device Fig. 2 is a schematic diagram of an organic EL device manufacturing method. Fig. 3 is a schematic block diagram of an organic EL'f° according to a first embodiment of the present invention. FIG. 4 is a structural example of a manufacturing device for a rainbow member.

膜之SiN膜形成裝置時的一構造 成作為第1密封膜的SiN 圖5A〜D係本發明實施態樣2 ^^側剖面圖。 之製造方法之示意說明圖。 乍馮顯示元件的有機EL元件 圖6係本發明實施態樣2的 示意方塊圖。 元件製造裝置的構造例之 圖7係碳化氫膜形成裝置的〜& _ 圖8係本發明實施態樣3的有=例之示意顯示側剖面圖。 示意方塊圖。 俄EL元件製造裝置的構造例之 201240185 _ m 〇 之示思方塊圖。 虹元件製造裝置的構造例 =-=¾的構塊圖。 圖13係另-有機EL元件^的構么例之不意方塊圖。 圖Η係顯示本發明實施態 =5凌置的,造例之示意方塊圖。 圖15係本發明實施態的^機EL兀件之側剖面圖。 之示意方塊圖。 ^ 5的_ EL元件製造裝置的構造例 之示意方塊圖心祕6的有機&元件製造裝置的構造例 剖面Γ係顯示具有2層構造的第2密封膜的有飢元件之側 = 製造裝置的構造例之示意方塊圖。 剖面.=。具有3層構造的第2密封膜的有機既元件之側 圖21係有機EL元件製造裝置的構造 Ξ f3=示ίϊ明實施態樣7的有機el S之側二圖。 有機EL元件之側剖面圖。 的關係之調查結果之圖表/ 、大的日數與發光面積 面積=彳=查另絲體放置於大氣中經日數與發先 【主要元件符號說明】 【0085】 元件m、m、1G5、雇、1()7、1{)8、⑽、別、m...有機肛 102、103...暫時密封體 32 201240185 2、 201、202、203、204、205、206、207、208、209、210... 有機EL元件製造裝置In the case of the SiN film forming apparatus of the film, SiN is used as the first sealing film. Figs. 5A to 5D are cross-sectional views of the embodiment of the present invention. A schematic illustration of the manufacturing method. Organic EL Element of 乍Fun Display Element Fig. 6 is a schematic block diagram of Embodiment 2 of the present invention. Fig. 7 is a schematic cross-sectional side view showing an example of the embodiment 3 of the present invention. Fig. 7 is a schematic side view showing an example of the embodiment 3 of the present invention. Schematic block diagram. A schematic diagram of the 201240185 _ m 构造 configuration example of the Russian EL component manufacturing apparatus. Configuration Example of Rainbow Element Manufacturing Apparatus =-=3⁄4 block diagram. Fig. 13 is a block diagram showing an example of another organic EL element. The figure shows a schematic block diagram of an example of the embodiment of the present invention. Figure 15 is a side cross-sectional view showing an EL member of the embodiment of the present invention. Schematic block diagram.示意 _ _ EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL EL A schematic block diagram of a structural example. Profile.=. Side of the organic component of the second sealing film having a three-layer structure. Fig. 21 is a structure of the organic EL device manufacturing apparatus. Ξ f3 = side view of the organic EL S of the seventh embodiment. A side cross-sectional view of an organic EL element. Chart of the survey results of the relationship /, the number of days and the area of the light-emitting area = 彳 = check the placement of the silk body in the atmosphere by the number of days and the first [main symbol description] [0085] Components m, m, 1G5, Employment, 1 () 7, 1 {) 8, (10), other, m... organic anal 102, 103... temporary sealing body 32 201240185 2, 201, 202, 203, 204, 205, 206, 207, 208 209, 210... Organic EL device manufacturing device

3、 30、31、33、35、36、40、41、46、47、49、51、56... SiN 膜形成裝置 4、 24、26、32、34、37、39、42、45、48、50、54、57、59... 傳遞模組(TM) 5.. .碳化氫膜形成裝置 6.. .第2密封膜形成部 11.. .玻璃基板 11a...陽極層 12.. .有機EL零件 12a...正孔輸送層 12b...正孔注入層 12c...藍發光層 12d...紅發光層 12e...綠發光層 12f...電子輸送層 12g...陰極層 第1無機膜 13.. .第1密封膜 14.. .第2密封膜 、17、71、72、74、75...第 2 無機膜 18、 70、73、76...第2碳化氫膜 19、 77...第3無機膜 21.. .裝載器 22.. .真空預備室(LL) 23.. .成膜裝置 24··.傳遞模組(TM) 25.. .電極形成裝置 26.. .傳遞模組(TM) 15.. .第1有機膜 16 33 201240185 27.. .第1密封膜形成裝置 28.. .真空預備室(LL) 29.. .暫時密封體保管部 38、43、44、53、58... α-CL膜形成裝置 52、55、60. ..A1膜形成裝置 61.. .裝載器 62.. .真空預備室(LL) 78.. .黏接層 79.. .基板 80.. .無機膜 81.. .氣體阻障基板 301.. .處理室 301a...底壁 302.. .試料台 303.. .柱狀構件 304.. .引導部 306.. .加熱器電源 308.. . DC 電源 310.. .開口部 311.. .排氣室 311a...空間 315.. .氣體導入構件 316.. .處理氣體供給系統 323.. .排氣管 324.. .排氣裝置 325.. .搬入口 326、356...開閉閘閥 327.. .支持部 328.. .介電體窗 329.. .密封構件 34 ⑧ 201240185 331.. .槽孔板 332.. .微波放射槽孔 333.. .介電體板 334.. .防護蓋體 334a...蓋體側冷卻水流路 335.. .密封構件 336.. .開口部 337.. .導波管 337a...同軸導波管 337b...矩形導波管 338.. .匹配電路 339.. .微波產生裝置 340.. .模式變換器 341.. .同軸内導體 342.. .同軸外導體 350.. .程序控制器 351.. .使用者介面 352.. .記憶部 355.. .送出口 501.. .處理室 502.. .搬運裝置 503.. .支持台 504.. .基板處理頭 511.. .搬運口 512、516...閘閥 513.. .排氣管 514.. .排氣裝置 515.. .送出口 541.. .蒸鍍頭 542.. .紅外線照射頭 35 201240185 543.. .硬化處理頭 544、546...流量調整閥 545.. .蒸氣產生部 550.. .程序控制器 551.. .使用者介面 552.. .記憶部 36 ⑧3, 30, 31, 33, 35, 36, 40, 41, 46, 47, 49, 51, 56... SiN film forming devices 4, 24, 26, 32, 34, 37, 39, 42, 45, 48, 50, 54, 57, 59... Transfer Module (TM) 5. Hydrocarbon film forming device 6. Second sealing film forming portion 11. Glass substrate 11a... Anode layer 12 .. Organic EL part 12a... Positive hole transport layer 12b... Positive hole injection layer 12c... Blue light emitting layer 12d... Red light emitting layer 12e... Green light emitting layer 12f... Electron transport layer 12 g...cathode layer first inorganic film 13.. first sealing film 14: second sealing film, 17, 71, 72, 74, 75... second inorganic film 18, 70, 73, 76 ... 2nd hydrocarbon film 19, 77... 3rd inorganic film 21. Loader 22: Vacuum preparation chamber (LL) 23.. Film forming apparatus 24··. Transfer module (TM) 25.. Electrode forming device 26: Transfer module (TM) 15.. First organic film 16 33 201240185 27.. First sealing film forming device 28.. Vacuum preparation chamber (LL) 29 Temporary sealed body storage portions 38, 43, 44, 53, 58... α-CL film forming devices 52, 55, 60, . . . A1 film forming device 61.. Loader 62.. Vacuum preparation Room (LL) 78.. .Adhesive layer 79.. base Plate 80.. Inorganic film 81.. Gas barrier substrate 301.. Process chamber 301a... Bottom wall 302.. Sample table 303.. Column member 304.. Guide portion 306.. . Heater power supply 308.. DC power supply 310.. opening 311.. exhaust chamber 311a... space 315.. gas introduction member 316.. processing gas supply system 323.. exhaust pipe 324 .. .Exhaust device 325.. Move inlet 326, 356... Open and close gate valve 327.. Support 328.. Dielectric window 329.. Sealing member 34 8 201240185 331.. Slot plate 332.. Microwave radiation slot 333.. Dielectric plate 334.. Protective cover 334a... Cover side cooling water flow path 335.. Sealing member 336.. Opening 337.. Wave tube 337a... coaxial waveguide 337b... rectangular waveguide 338.. matching circuit 339.. microwave generating device 340.. mode converter 341.. coaxial inner conductor 342.. coaxial Outer conductor 350.. Program controller 351.. User interface 352.. Memory unit 355.. Delivery port 501.. Processing chamber 502.. Portion device 503.. Support table 504.. Substrate processing head 511.. Portion 512, 516... Gate valve 513.. Exhaust pipe 514.. Exhaust device 515.. 541.. . evaporation head 542.. infrared ray head 35 201240185 543.. hardening treatment head 544, 546... flow adjustment valve 545.. steam generation part 550.. program controller 551.. User interface 552.. Memory unit 36 8

Claims (1)

201240185 七、申請專利範圍: 1、一種顯示元件製造裝置,其在顯示零件上 :::件的密封膜以製造顯示元件;該顯示元件製以以: 第1封膜形成機構,於減壓下在該顯示零件的表面上形成 密封^密封麟成機構,在已賴的該第1密簡上形成第2 時間保管形成有該第1密封膜_示零件; 密封運 機構構所保管的顯示零件從該保管 2包上專利範圍第11貝之顯示元件製造裂置,1中, 匕3__複數個該第2密封膜形成機構。 τ 顯示铸^錢轉件均如來密封該 ^ 頁不元件製造方法之特徵為包含: 在該;成;=封膜形成機構,於減壓下 密封第1細的顯示零件從該第1 件;保s步驟’藉由該保管機構以既定時間保管搬運來的顯示零 機構第將所保管的顯示零件搬運至第2密封膜形成 來的膜形成步驟’藉由該第2密封膜形成機槿,乂搬運 4如令第,填上形成第2細 謗第項之齡元賴造麵,盆中, 山封跡成步驟,係在形成有該第1密封膜的 1數個 37 201240185 々零件上約略同時形成第2密封膜。 ^、如申請專利範圍第3或4項之顯示元件製造方法,其中, 讀第1密封膜含有由無機材料所構成的無機膜。 ^、如申晴專利範圍第5項之顯示元件製造方法,其中, ί密封麟在該無機膜上堆疊由有機材料所構成的有機 决,^、中如申請專利範圍第3至6項中任一項之顯示元件製造方 :機膜。 不元件製造方 凑,# ^如申請專利範圍第3至7項中任一項之顯: 亀1 1範園第3至8項中 由無機材料所構成的無; 其中 封由有機材料所構成的有_ 項之顯示元件製造方法所製造 食、_ 種:員不70件,其特徵為:由申請專利 38201240185 VII. Patent application scope: 1. A display component manufacturing device, which comprises: a sealing film of a component on a display part to manufacture a display component; the display component is manufactured by: a first film forming mechanism under decompression a seal sealing mechanism is formed on the surface of the display part, and the first sealing film is formed on the first time of the first sealing, and the display part stored in the sealing mechanism is stored. The display element of the 11th patent of the above-mentioned storage 2 package is manufactured, and 1 is made up of a plurality of the second sealing film forming means. τ shows that the casting material is sealed to seal the sheet. The method for manufacturing the component is characterized in that: the film forming mechanism is configured to seal the first thin display part from the first piece under reduced pressure; In the step s, the film forming step of transporting the display member stored in the storage unit to the second sealing film by the storage unit for a predetermined period of time is formed by the second sealing film.乂Handling 4, if ordered, fill in the age of the second 谤 谤 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , 山 山 山 山 山 山 山 山 山 山 山 山The second sealing film is formed approximately simultaneously. The method of manufacturing a display device according to claim 3, wherein the first sealing film contains an inorganic film made of an inorganic material. The method for manufacturing a display device according to the fifth aspect of the patent application, wherein the sealing seal is stacked on the inorganic film by an organic material composed of an organic material, and the middle of the patent application is in the third to sixth embodiments. A display component manufacturer: machine film. If the component manufacturing is not completed, # ^ is as shown in any of the third to seventh patent applications: 亀1 1 No. 3 to 8 of the Fan Park is composed of inorganic materials; the seal is composed of organic materials. There are _ items of the display component manufacturing method to make food, _ species: 70 members, characterized by: patent application 38
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