KR20130129969A - Display device manufacturing apparatus, display device manufacturing method, and display device - Google Patents

Abstract

It is possible to expose the temporary sealing member of the display device in the air and to temporarily store it, and to obtain a final product of the display device having various film structures according to the required performance, thereby providing a display device manufacturing apparatus and a display device having good throughput. A manufacturing method and a display device are provided. By the 1st sealing film forming apparatus 27, a 1st sealing film is formed in the surface of organic electroluminescent element, and a temporary sealing body is obtained. This temporary seal is taken out by the LL 28 from the reduced pressure space to the temporary sealed body storage part 29 in an atmospheric pressure space. After the temporary sealing body is temporarily stored in the temporary sealing body storage part 29 in the state with which moisture permeability was ensured by the 1st sealing film, it aims timing and each 2nd sealing film forming part 6 is carried out by a conveying apparatus. Is conveyed to each SiN film forming apparatus 30, and the 2nd sealing film is formed in the temporary sealing body in each SiN film forming apparatus 30. As shown in FIG.

Description

Display device manufacturing apparatus, manufacturing method and display device of display device {DISPLAY DEVICE MANUFACTURING APPARATUS, DISPLAY DEVICE MANUFACTURING METHOD, AND DISPLAY DEVICE}

The present invention relates to a display device manufacturing apparatus for forming a sealing film for sealing a display element, a manufacturing method of the display device, and a display device.

Recently, organic EL devices using, for example, electroluminescence (EL) have been developed as display devices. The organic EL device has advantages such as a lower power consumption than the CRT and the like, self-luminous light, and an excellent viewing angle compared to a liquid crystal display (LCD), and future development is expected.

By the way, display elements, such as organic electroluminescent element, are weak to moisture, and light emission brightness falls by the moisture which penetrated from the defect part of an element, or a non-luminescent area | region called a dark spot generate | occur | produces, and a moisture-permeable sealing film is formed on the surface. (Hereinafter, an organic EL element will be described as an example. An organic EL device is referred to as forming an encapsulation film on the surface of the organic EL element.) As the sealing film, an inorganic layer made of inorganic materials such as silicon nitride (hereinafter referred to as SiN) and aluminum oxide is used. Moreover, the sealing film using the laminated structure of the inorganic layer and the organic layer which consists of organic materials, such as UV hardening resin, is proposed (for example, patent documents 1-3).

Japanese Patent Laid-Open No. 10-312883 Japanese Patent Laid-Open No. 4-267097 Japanese Patent Laid-Open No. 64-041192

However, in order to secure sufficient moisture permeability of the organic EL device, it is necessary to form a thick sealing film for embedding particles adhering to the substrate surface. In the case where a thin sealing film is formed in which particles are not buried, a defect portion is generated between the particle and the sealing layer, and there is a fear that moisture may invade from the defect portion.

In order to evaluate the moisture permeability of this organic EL device, an environmental test at 60 ° C. and a humidity of 90% is performed. In order to pass this environmental test, for example, when a SiN film is formed as a sealing layer, the thickness is about 1000 nm. It is necessary to have In this case, it takes about 40 minutes to form the film by CVD (Chemical Vapor Deposition) method, and the same time as dry cleaning. When the film is formed by the CVD method, it takes a long time to obtain a thick film even in other film types.

Therefore, there was a problem that throughput decreased.

In the organic EL devices of Patent Literatures 1 to 3, in order to ensure high moisture permeability, it is necessary to increase the thickness of the sealing film and there is a problem that the throughput decreases as described above.

This invention is made | formed in view of such a situation, and it is possible to expose | maintain the display device in manufacture in the air, and to temporarily store it, and to obtain the final product of the display device which has various film structures according to the required performance, and can provide favorable throughput. It is to provide a display device manufacturing apparatus for manufacturing a display device that achieves the above, a manufacturing method of the display device, and a display device.

The display device manufacturing apparatus which concerns on this invention forms the sealing film for sealing the said display element in a display element, and manufactures a display device WHEREIN: A 1st sealing film is formed in the surface of the said display element under reduced pressure. The first sealing film forming means, the second sealing film forming means for forming the second sealing film on the formed first sealing film, the storage means for storing the display element on which the first sealing film is formed for a predetermined time, and the first Means for conveying the display element in which the 1st sealing film was formed from the said 1st sealing film formation means to the said storage means, and means for conveying the display element stored by the said storage means from the said storage means to the said 2nd sealing film formation apparatus. It characterized by having a.

The manufacturing method of the display device which concerns on this invention is a manufacturing method of the display device which forms a sealing film for sealing the said display element in a display element, and manufactures a display device. The 1st sealing film formation process of forming a 1st sealing film on the surface of a display element, the process of conveying the display element in which the said 1st sealing film was formed from the said 1st sealing film formation means to a storage means, and the conveyed display element are said On the first sealing film of the display element conveyed by the process of storing by a storage means for a predetermined time, the process of conveying the stored display element to a 2nd sealing film formation means, and the said 2nd sealing film formation means. It has a 2nd sealing film formation process which forms a 2nd sealing film, It is characterized by the above-mentioned.

The display device which concerns on this invention was manufactured by the manufacturing method of the display device mentioned above. It is characterized by the above-mentioned.

According to the present invention, a first sealing film of a thin film having a moisture permeability within a predetermined time is formed on a surface of a display element in a reduced pressure space to produce a temporary seal (hereinafter, referred to as a temporary seal) of a display device. This may be taken out into the atmospheric pressure space and temporarily stored, and various second sealing films may be formed for each display device according to the use of the display device. Moreover, also when forming the 2nd sealing film which is a thick film | membrane, the film | membrane as the whole process is formed by using a plurality of film-forming apparatuses simultaneously, or using several film-forming apparatuses connected in series, and forming into a film with respect to the said temporary sealing body sequentially. Can be improved.

1 is a side sectional view showing an organic EL device as a display device according to Embodiment 1 of the present invention.
2A to 2C are explanatory diagrams conceptually showing the manufacturing method of the organic EL device.
3 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus according to Embodiment 1 of the present invention.
4 is a side cross-sectional view schematically showing one configuration example in the case where the first sealing film forming apparatus is a SiN film forming apparatus for forming a SiN film as the first sealing film.
5A to 5D are explanatory diagrams conceptually showing a method for manufacturing an organic EL device as a display device according to Embodiment 2 of the present invention.
6 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus according to Embodiment 2 of the present invention.
7 is a side cross-sectional view schematically showing one configuration example of a hydrocarbon film forming apparatus.
8 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus according to Embodiment 3 of the present invention.
Fig. 9 is a side sectional view showing an organic EL device according to Embodiment 4 of the present invention.
10 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus according to a fourth embodiment of the present invention.
11 is a block diagram schematically illustrating a configuration example of another organic EL device manufacturing apparatus.
12 is a block diagram schematically illustrating a configuration example of another organic EL device manufacturing apparatus.
It is a block diagram which shows typically the structural example of another organic EL device manufacturing apparatus.
Fig. 14 is a side sectional view showing an organic EL device according to a fifth embodiment of the present invention.
15 is a block diagram schematically showing an example of the configuration of an organic EL device manufacturing apparatus according to a fifth embodiment of the present invention.
Fig. 16 is a side sectional view showing an organic EL device according to Embodiment 6 of the present invention.
17 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus according to a sixth embodiment of the present invention.
18 is a side sectional view showing an organic EL device having a second sealing film having a two-layer structure.
19 is a block diagram schematically illustrating a configuration example of an organic EL device manufacturing apparatus.
20 is a side sectional view showing an organic EL device having a second sealing film having a three-layer structure.
21 is a block diagram schematically illustrating a configuration example of an organic EL device manufacturing apparatus.
Fig. 22 is a side sectional view showing an organic EL device according to Embodiment 7 of the present invention.
Fig. 23 is a side sectional view showing an organic EL device according to Embodiment 8 of the present invention.
It is a graph which shows the result of having investigated the relationship between the elapsed days of atmospheric standing of a temporary sealing body, and light emission area.
Fig. 25 is a graph showing the results of examining the relationship between the number of days left for waiting in the other temporary sealing body and the light emitting area.

EMBODIMENT OF THE INVENTION Below, this invention is explained based on drawing which shows the Example.

In the display device according to the present invention, a first sealing film, which is a thin film having a moisture permeability within a predetermined time, is formed on a surface of a plurality of display elements formed on a substrate in a reduced pressure space to produce a temporary seal. After taking out into the space and storing temporarily, a second sealing film is formed on each of the first sealing films according to the use of the display device. The material of a 1st sealing film and a 2nd sealing film, and a layer structure (one of a single layer and a multilayer) are set suitably according to the moisture permeability etc. which are calculated | required based on the use of a display device. The second sealing film is not limited to the case where the film is formed, and the gas barrier substrate may be bonded to the surface of the temporary seal as the second sealing film. In addition, in the display device which concerns on this invention, after forming a 2nd sealing film on the 1st sealing film of a temporary sealing body, you may join a gas barrier board | substrate through the adhesive layer on the surface of this 2nd sealing film.

A first sealing film material as, for example, hydrocarbons such as paraffin, an amorphous hydrocarbon (hereinafter, α-CH called _x) such as an organic material, for example inorganic, such as silicon nitride (SiN), silicon oxynitride (SiON) A material is mentioned. As mentioned above, although the 1st sealing film may consist of multiple layers, when a display element consists of organic materials, the film formed directly on a display element is inorganic from a viewpoint that a chemical reaction does not generate | occur | produce with a display element. It is preferably made of a material. As the second sealing film material may be, for example, an inorganic material such as an organic material, such as SiN, SiON, Al, aluminum (Al ₂ O ₃₎ oxide. Although the 2nd sealing film may consist of a multilayer, it is preferable that the uppermost layer of a 2nd sealing film consists of an inorganic material from a viewpoint that moisture permeability is favorable. The SiN film, the SiON film and the α-CH _x film are formed by plasma CVD, the hydrocarbon film is formed by physical vapor deposition (PVD), and the Al film and Al ₂ O ₃ film are formed by sputtering.

The thickness of a 1st sealing film should just be a thickness which can ensure moisture permeability, when taking out and temporarily storing a temporary sealing body from the pressure reduction space which formed the 1st sealing film into atmospheric pressure space. That is, what is necessary is just the thickness which does not produce the moisture absorption deterioration by air | atmosphere. The appropriate thickness can be set according to the material of the membrane, the time of temporary storage in the atmospheric pressure space, and the like. The thickness of a 2nd sealing film can be suitably set according to the moisture permeability, etc. which are calculated | required based on the use of a display device.

When forming a 2nd sealing film by CVD directly on a 1st sealing film, you may remove moisture etc. which adhered to the surface of a 1st sealing film by plasma processing of inert gas, such as argon. In this case, the adhesiveness of a 1st sealing film and a 2nd sealing film can improve, and a sealing property can be improved.

The display device manufacturing apparatus which concerns on this invention forms a temporary sealing body formation part which forms a 1st sealing film on the surface of a display element under reduced pressure, and obtains a temporary sealing body, and is temporarily sealed from the 1st sealing film forming apparatus of this temporary sealing body formation part. The means for taking out a sieve, the means for temporarily storing (temporary seal storage part), the means for carrying in the stored temporary seal, and a temporary seal are carried in by this means, and the temporary seal is carried out on the surface of this temporary seal. The 2nd sealing film forming part which forms a 2nd sealing film and obtains a display device is provided. The temporary seal body forming portion and the second sealing film forming portion are separated. The display device manufacturing apparatus may be provided with the 2nd sealing film formation part of the same kind, and in this case, you may comprise so that a temporary sealing body may be conveyed to the some 2nd sealing film formation part arrange | positioned in parallel from the temporary sealing body storage part. You may comprise so that a temporary sealing body may be conveyed to the some 2nd sealing film formation part connected in series from a temporary sealing body storage part.

Hereinafter, the specific structure and manufacturing method of this organic EL device at the time of applying an organic EL device as a display device of this invention are explained in full detail.

≪ Example 1 >

1 is a side sectional view showing an organic EL device 101 as a display device according to Embodiment 1 of the present invention, and FIGS. 2A to 2C are explanatory diagrams conceptually showing a manufacturing method of the organic EL device 101.

In the organic EL device 101, an organic layer as a display element formed by laminating an anode layer 11a, a light emitting layer and a cathode layer 12g made of, for example, an ITO (Indium Tin Oxide) film or the like on a glass substrate 11. The entirety of each layer of the EL element 12 is sealed by the first sealing film 13, and the first sealing film 13 is sealed by the second sealing film 14. Here, the case where the 1st sealing film 13 and the 2nd sealing film 14 have a single layer structure is demonstrated.

It is preferable that the 1st sealing film 13 consists of an inorganic material from a viewpoint that a chemical reaction does not generate | occur | produce with the organic electroluminescent element 12. FIG. SiN, SiON, etc. are mentioned as an inorganic material. As a material of the second sealing film 14, there may be mentioned an organic material of an inorganic material and a hydrocarbon, such as α-CH _x, such as SiN, SiON. It is preferable to use an inorganic material from a viewpoint that moisture permeability is more favorable. Hereinafter, the case where the 1st sealing film 13 and the 2nd sealing film 14 consist of SiN is demonstrated. The SiN film is formed by the plasma CVD method.

The anode layer 11a is a transparent electrode capable of transmitting light generated in the light emitting layer, for example, an ITO film.

The organic layer of the organic EL element 12 is a six-layer structure which is laminated | stacked from the 1st layer to the 6th layer by vacuum vapor deposition, for example. The first layer is the hole injection layer 12a, the second layer is the hole transport layer 12b, the third layer is the blue light emitting layer 12c, the fourth layer is the red light emitting layer 12d, and the fifth layer is the green light emitting layer 12e. , The sixth layer is the electron transport layer 12f. In addition, the structure of the 1st-6th layer demonstrated here is an example.

The cathode layer 12g is a film formed of silver, aluminum, an aluminum alloy, a lithium aluminum alloy, magnesium or silver alloy formed by vapor deposition.

When manufacturing the organic EL device 101, first, as shown in Fig. 2A, the organic EL element 12 is formed on the glass substrate 11 on which the anode layer 11a is formed, and then as shown in Fig. 2B. Similarly, the first sealing film 13 is formed on the surface of the glass substrate 11 and the organic EL element 12 on which the anode layer 11a is formed. Thereby, the temporary sealing body 102 is obtained.

When the thickness of the 1st sealing film 13 is a thickness which can ensure moisture permeability, when taking out the temporary sealing body 102 to atmospheric pressure space and temporarily storing it from the reduced pressure space which formed the 1st sealing film 13, do. That is, what is necessary is just the thickness which does not deteriorate moisture absorption by air | atmosphere. The appropriate thickness can be set according to the material of the membrane, the time of temporary storage in the atmospheric pressure space, and the like. When the first sealing film 13 is made of SiN, which is an inorganic material, as in the present embodiment, the thickness may be set to approximately 50 to 500 nm when stored temporarily for about 24 hours.

As shown in FIG. 2C, the second sealing film 14 is formed on the first sealing film 13 of the temporary sealing body 102 temporarily stored. As a result, the organic EL device 101 is obtained. The thickness of the second sealing film 14 is appropriately set according to the moisture permeability and the like required based on the use of the organic EL device.

3 is a block diagram schematically showing an example of the configuration of the organic EL device manufacturing apparatus 2 according to the first embodiment of the present invention. The organic EL device manufacturing apparatus 2 which concerns on a present Example is the loader 21, the load lock chamber (henceforth LL) 22, and the film-forming apparatus connected in series along the conveyance direction of the glass substrate 11 ( 23, transfer module (hereinafter referred to as TM) 24, electrode forming apparatus 25, TM 26, first sealing film forming apparatus 27, LL 28 and temporary sealing body storage portion 29 ) And three second sealing film forming portions 6. The temporary seal body forming part is comprised by the loader 21, the LL 22, the film-forming apparatus 23, the TM 24, the electrode forming apparatus 25, the TM 26, and the 1st sealing film forming apparatus 27. do. The 2nd sealing film forming part 6 is equipped with the SiN film forming apparatus 30 which forms a SiN film by the plasma CVD method as an example of the loader 61, the LL 62, and a 2nd sealing film forming apparatus.

Hereinafter, for convenience of drawing, the SiN film forming apparatus is referred to as SiN in the drawing. In addition, the number of the 2nd sealing film forming parts 6 (SiN film forming apparatus 30) with which the organic EL device manufacturing apparatus 2 is provided is not limited to three, What is necessary is just a plurality.

The loader 21, the LL 22, the film forming apparatus 23, the TM 24, the electrode forming apparatus 25, the TM 26, the first sealing film forming apparatus 27 and the LL 28 are conveyed. It is not limited to the case where it is connected in series along a direction, What is necessary is just to be connected inline (vacuum consistent). For example, the film-forming apparatus 23, the electrode forming apparatus 25, and the 1st sealing film forming apparatus 27 may be arrange | positioned around the common conveyance chamber.

The loader 21 is an apparatus for carrying in the glass substrate 11, for example, the glass substrate 11 in which the anode layer 11a was previously formed in the surface, into the organic electroluminescent device manufacturing apparatus 2. As shown in FIG. The LL 22, TM 24, TM 26, and LL 28 are devices for transferring the glass substrate 11 between the respective processing devices.

The film forming apparatus 23 is a hole injection layer 12a, a hole transport layer 12b, a blue light emitting layer 12c, a red light emitting layer 12d, a green light emitting layer 12e, and an electron transporting layer on the glass substrate 11 by vacuum deposition. It is an apparatus for forming 12f.

The electrode forming apparatus 25 uses a pattern mask to deposit or sputter, for example, silver, aluminum, an aluminum alloy, a lithium aluminum alloy, or an alloy of magnesium and silver, to form a cathode layer 12g on the electron transport layer 12f. ) Is a device for forming.

The 1st sealing film forming apparatus 27 is an apparatus for forming the 1st sealing film 13, such as an inorganic film, for example by CVD or vapor deposition, and sealing the various films formed on the glass substrate 11, for example. .

The glass substrate 11 is carried in from the loader 21 to the LL 22 via one gate valve, and then the inside of the LL 22 is reduced in pressure, and the glass substrate 11 is opened via the other gate valve. It is carried out to the film-forming apparatus 23. The glass substrate 11 is held in a state where the film forming apparatus 23, the TM 24, the electrode forming apparatus 25, the TM 26, and the first sealing film forming apparatus 27 are held under reduced pressure. It is conveyed sequentially and the 1st sealing film 13 is formed in the surface of the organic electroluminescent element 12 as mentioned above, and the temporary sealing body 102 is obtained.

The 1st sealing film forming apparatus 27, the LL28, and the temporary sealing body storage part 29 are connected through two gate valves. The temporary sealing body storage part 29 is comprised from the conveyance part containing conveyance apparatuses, such as a robot arm, and the cassette mounting part which mounts and connects a cassette. The cassette is a transport container which accommodates a plurality of temporary sealing bodies 102 (that is, one sheet as the glass substrate 11) in a plural and horizontal state.

The inside of LL 28 is made into a reduced pressure state, the gate valve between the 1st sealing film forming apparatus 27 is opened, and the temporary sealing body 102 is moved from the 1st sealing film forming apparatus 27 to the LL 28. It is taken out. Next, the LL 28 is opened at atmospheric pressure, the gate valve between the temporary seal storage unit 29 is opened, and the temporary seal 102 is temporarily stored from the LL 28 by the transfer device. It is conveyed into the part 29 and is accommodated in the cassette of a cassette mounting part.

In addition, the temporary sealing body storage part 29 may be provided with the temporary sealing body mounting part which mounts the temporary sealing body 120 one by one, without providing a cassette mounting part.

In addition, the temporary sealing body storage part 29 is sealed, it is hold | maintained in the pressurized state by the pressure reduction state or nitrogen encapsulation, etc., and from the 1st sealing film formation apparatus 27, without opening LL28 to air | atmosphere. The temporary seal 102 may be carried out to the temporary seal storage part 29. In addition, the inside of the cassette may be nitrogen sealed instead of the inside of the temporary seal storage 29.

The organic EL device manufacturing apparatus 2 is provided with the temporary sealing body storage part other than the temporary sealing body storage part 29, and the temporary sealing body 102 is from a temporary sealing body storage part 29 by one body or a cassette. Conveyed to the temporary sealed body storage unit by a conveying device such as an auto guided vehicle (AGV), a robot, a belt conveyor, and a gas floating conveying device having a gas ejection means for floating and moving the temporary sealing body 102. You may use it.

The temporary seal body 29 or the temporary seal 102 temporarily stored in the temporary seal body storage unit is conveyed by a conveying device such as an AGV, a robot, a belt conveyor, or a gas floating conveying device for each body or cassette. It is conveyed to the installation place of the 2nd sealing film forming part 6, is carried in to the loader 61, and is carried in to the SiN film forming apparatus 30 hold | maintained in the reduced pressure state through LL62.

FIG. 4 shows an example of the configuration when the first sealing film forming apparatus 27 is a SiN film forming apparatus (plasma CVD apparatus) 3 (hereinafter also referred to as a CVD apparatus) that forms a SiN film as the first sealing film. It is a side sectional view typically shown. The CVD apparatus 3 is, for example, a RLSA (Radial Line Slot Antenna) type, and is provided with an airtight and grounded substantially cylindrical processing chamber 301. The processing chamber 301 is made of aluminum, for example, and has a flat plate annular bottom wall 301a having a circular opening 310 formed at a substantially central portion thereof, and a side wall provided at the periphery of the bottom wall 301a. . In the inner circumference of the processing chamber 301, a cylindrical liner made of ceramics such as quartz and Al ₂ O ₃ may be provided.

An annular gas introduction member 315 is provided on the side wall of the processing chamber 301, and a processing gas supply system 316 is connected to the gas introduction member 315. The gas introduction member 315 is disposed in a shower shape, for example. The predetermined process gas is introduced into the process chamber 301 through the gas introduction member 315 from the process gas supply system 316. As the processing gas, an appropriate one is used depending on the type and content of the plasma treatment. For example, when forming a SiN film by plasma CVD, a monosilane (SiH ₄ ) gas, an ammonia (NH ₃ ) gas, a nitrogen (N ₂ ) gas, or the like is used.

Further, sidewalls of the processing chamber 301 are carrying in and out ports 325 and carrying out ports for carrying in and out of the glass substrate 11 between the transfer module 26 and 28 adjacent to the CVD apparatus 3. 355 and the gate valves 326 and 356 which open and close this delivery port 325 and the delivery port 355 are provided.

In the bottom wall 301a of the processing chamber 301, a cylindrical exhaust chamber 311 having a bottom projecting downward is provided to communicate with the opening 310. An exhaust pipe 323 is formed on the side wall of the exhaust chamber 311, and an exhaust device 324 including a high speed vacuum pump is connected to the exhaust pipe 323. By operating the exhaust device 324, the gas in the processing chamber 301 is uniformly discharged into the space 311a of the exhaust chamber 311 and exhausted through the exhaust pipe 323. Therefore, the inside of the processing chamber 301 can be decompressed at a high speed to a predetermined degree of vacuum, for example, 0.133 Pa.

In the center of the bottom part of the exhaust chamber 311, a columnar member 303 made of ceramic such as AlN is protruded substantially vertically, and the glass substrate 11 to be subjected to plasma treatment at the tip of the columnar member. ) Is provided with a sample stand 302. A guide 304 for holding the glass substrate 11 is provided at the outer edge of the sample stage 302. The heater power source 306 for heating the glass substrate 11 and the DC power supply 308 for electrostatic adsorption are connected to the sample stand 302.

In the opening formed in the upper portion of the processing chamber 301, a ring-shaped support portion 327 is provided along the periphery thereof. The support part 327 is made of a dielectric such as ceramics such as quartz or Al ₂ O ₃ , and a disk-shaped dielectric window 328 through which microwaves are transmitted is hermetically provided via the seal member 329.

Above the dielectric window 328, a disk-shaped slot plate 331 is provided so as to face the sample stage 302. The slot plate 331 is held at the upper end of the side wall of the processing chamber 301 in a state of being in surface contact with the dielectric window 328. The slot plate 331 is made of a conductor, for example, a copper plate or an aluminum plate whose surface is gold plated, and has a configuration in which a plurality of microwave radiation slots 332 penetrate in a predetermined pattern. In other words, the slot plate 331 constitutes an RLSA antenna. The microwave radiation slots 332 have a long groove shape, for example, and are arranged in close proximity such that adjacent pairs of microwave radiation slots 332 have an approximately L shape. The plurality of pairs of microwave radiation slots 332 may be arranged concentrically. The length and the spacing of the microwave radiation slots 332 are determined according to the wavelength of the microwaves.

On the upper surface of the slot plate 331, dielectric plates 333 having a dielectric constant greater than that of vacuum are provided in surface contact with each other. The dielectric plate 333 has a plate-shaped dielectric disc portion. The hole part is formed in the substantially center part of a dielectric disc part. Moreover, the cylindrical microwave incident part protrudes from the periphery of a hole substantially perpendicularly to a dielectric disc part.

The disk-shaped shield cover body 334 is provided in the upper surface of the process chamber 301 so that the slot plate 331 and the dielectric plate 333 may be covered. The shield cover body 334 is made of metal, such as aluminum or stainless steel, for example. The sealing member 335 is sealed between the upper surface of the processing chamber 301 and the shield lid 334.

The cover body side cooling water flow path 334a is formed in the shield cover body 334, and the cooling plate flows through the cover body side cooling water flow path 334a, and the slot plate 331, the dielectric window 328, and the dielectric plate 333 ) Is configured to cool the shield lid 334. In addition, the shield cover 334 is grounded.

The opening part 336 is formed in the center of the upper surface of the shield cover body 334, and the waveguide 337 is connected to this opening part. The waveguide 337 is a cross-sectional rectangle extending in the horizontal direction connected to the upper end of the coaxial waveguide 337a having a circular cross-sectional shape extending upward from the opening 336 of the shield cover body 334 and the coaxial waveguide 337a. The rectangular waveguide 337b has a shape, and a microwave generator 339 is connected to an end portion of the rectangular waveguide 337b via a matching circuit 338. Microwaves generated by the microwave generator 339, for example, microwaves having a frequency of 2.45 GHz are propagated through the waveguide 337 to the slot plate 331. As the frequency of microwaves, 8.35 GHz, 1.98 GHz, 915 MHz or the like can also be used. The mode converter 340 is provided at the end of the rectangular waveguide 337b on the side of the connection portion with the coaxial waveguide 337a. The coaxial waveguide 337a has a cylindrical coaxial outer conductor 342 and a coaxial inner conductor 341 disposed along the centerline of the coaxial outer conductor 342, and the lower end of the coaxial inner conductor 341 is a slot plate. The connection is fixed to the center of 331. The microwave incident portion of the dielectric plate 333 is inserted into the coaxial waveguide 337a.

In addition, the CVD apparatus 3 includes a process controller 350 that controls each component of the CVD apparatus 3. The process controller 350 includes a user interface 351 including a keyboard for performing a command input operation and the like for the process manager to manage the CVD apparatus 3, and a display for visualizing and displaying the operation status of the CVD apparatus 3. Connected. The process controller 350 also includes a storage unit 352 in which a control program for realizing various processes executed in the CVD apparatus 3 under the control of the process controller 350, and a process control program in which process condition data and the like are recorded. Is connected. The process controller 350 calls and executes any process control program according to the instruction from the user interface 351 from the storage unit 352, and under the control of the process controller 350, the CVD apparatus 3 Desired processing is performed.

The SiN film forming apparatus 30 also has the same structure as the SiN film forming apparatus 3.

The operation of the organic EL device manufacturing apparatus 2 configured as described above will be briefly described. First, the glass substrate 11 in which the anode layer 11a was previously formed on the surface is carried into the film-forming apparatus 23 via the loader 21 and the LL 22. In the film forming apparatus 23, the organic EL element 12 is formed on the glass substrate 11. Subsequently, it is carried in to the electrode forming apparatus 25 by TM24, and the cathode layer 12g is formed. Next, the glass substrate 11 is conveyed to the 1st sealing film forming apparatus 27 by TM26, and the 1st sealing film forming apparatus 27 is carried out on the surface of the organic electroluminescent element 12 by 1st. The sealing film 13 is formed, and the temporary sealing body 102 is obtained. This temporary sealing body 102 is taken out by the LL 28 from the pressure reduction space to the temporary sealing body storage part 29 in an atmospheric pressure space. The temporary sealing body 102 is temporarily stored in the temporary sealing body storage part 29 in the state which moisture permeability was ensured by the 1st sealing film 13, for example, the temporary sealing body 102 is predetermined number, for example. It is conveyed to the installation place of each SiN film forming apparatus 30 by the above-mentioned conveying apparatus in consideration of timing, such as waiting to accumulate. The temporary sealing body 102 is carried into the SiN film forming apparatus 30 via the loader 61 and the LL 62, and the second sealing film 14 is formed in the temporary sealing body 102.

The film thickness of the first sealing film 13 is 500 nm or less, and the film formation time is short. In the case of forming a 1000 nm SiN film, for example, as the second sealing film 14, a time of about 40 minutes is required for one organic EL device. However, in the present embodiment, a plurality of SiN film forming apparatuses 30 Since the SiN film is formed at substantially the same time, the film formation amount per unit time increases, and the throughput can be improved as a whole without being delayed in the film forming process of the sealing film as in the prior art.

<Example 2>

5A to 5D are explanatory diagrams conceptually showing a method of manufacturing the organic EL device 104 as the display device according to the second embodiment of the present invention. In the figure, the same part as FIG. 2A-FIG. 2C attaches | subjects the same code | symbol, and detailed description is abbreviate | omitted.

As for the temporary sealing body 103 of the organic EL device 104, unlike the temporary sealing body 102 of the organic EL device 101, a 1st sealing film consists of two layers. Here, the case where the 1st sealing film consists of the 1st inorganic film 13 which consists of inorganic materials, and the 1st organic film 15 which consists of organic materials is demonstrated. SiN, SiON, etc. are mentioned as said inorganic material. Examples of the organic material, there may be mentioned hydrocarbons, such as α-CH _x. Hereinafter, the case where the 1st inorganic film 13 consists of a SiN film and the 1st organic film 15 is a paraffin represented by molecular formula CxHy (x is 20 or more) as a hydrocarbon is demonstrated. When the first organic film 15 is a hydrocarbon film, it is formed by (vacuum physical) deposition as described later. When the first organic film 15 is an α-CH _x film, it may be formed by a plasma CVD method using C ₄ H ₆ , CH ₄ , C ₂ H _2, or the like as a hydrocarbon gas.

When manufacturing the organic EL device 104, first, as shown in FIG. 5A, the organic EL element 12 is formed on the glass substrate 11 on which the anode layer 11a is formed, and then as shown in FIG. 5B. Similarly, the first inorganic film 13 is formed on the surface of the glass substrate 11 and the organic EL element 12 on which the anode layer 11a is formed. As shown in FIG. 5C, the temporary seal 103 is obtained by forming the first organic film 15 on the first inorganic film 13.

The thickness of a 1st sealing film is set to the thickness which can ensure moisture permeability, when taking out the temporary sealing body 103 to atmospheric pressure space and temporarily storing it from the pressure reduction space which formed the 1st sealing film into a film. That is, what is necessary is just the thickness which does not deteriorate moisture absorption. The appropriate thickness can be set according to the material of the membrane, the time of temporary storage in the atmospheric pressure space, and the like. As an example, the thickness when the first inorganic film 13 is made of SiN is about 50 nm to 500 nm, and the thickness when the first organic film 15 is made of paraffin is about 100 nm to 1000 nm. .

And as shown in FIG. 5D, on the 1st organic film (hydrocarbon film) 15 of the temporary sealing body 103 temporarily stored, the 2nd inorganic film which consists of a SiN film as a 2nd sealing film ( By forming 16, the organic EL device 104 is obtained.

6 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus 201 according to a second embodiment of the present invention. 3, the same code | symbol is attached | subjected to the same part as FIG. 3, and detailed description is abbreviate | omitted. 6, the loader 61 and the LL 62 of the 2nd sealing film formation part are abbreviate | omitted (it is the same hereafter).

In the organic electroluminescent device manufacturing apparatus 201, the 1st sealing film forming apparatus 27 is the SiN film forming apparatus 3 which consists of a plasma CVD apparatus, TM (4), and the hydrocarbon film forming apparatus 5 which consists of a vapor deposition apparatus. It is configured by placing them in series. Similar to the organic EL device manufacturing apparatus 2, the temporary sealing body 103 obtained by the first sealing film forming apparatus 27 is taken out to the temporary sealing body storage part 29 in the atmospheric pressure space, and one by one. After being housed in a cassette or the like and temporarily stored for each of a plurality of bodies, each is transported to three SiN film forming apparatuses 30.

7 is a side cross-sectional view schematically showing an example of the configuration of the hydrocarbon film forming apparatus (deposition apparatus) 5. The vapor deposition apparatus 5 accommodates the glass substrate 11, and processes the vapor deposition, reflow process, and hardening process of the 1st organic film (hydrocarbon film) 15 with respect to the glass substrate 11 inside ( 501). The processing chamber 501 forms a hollow substantially rectangular parallelepiped shape in which the conveyance direction is in the longitudinal direction, and is made of aluminum, stainless steel, or the like. An inlet 511 and an outlet 515 for conveying the glass substrate 11 into and out of the process chamber 501 are formed on the surfaces of both ends in the longitudinal direction of the process chamber 501, and gate valves 512 and 516. Is configured to open and close the carrying in and out ports 511 and 515. An exhaust pipe 513 is formed at an appropriate location of the processing chamber 501, and an exhaust device 514 including a high speed vacuum pump is connected to the exhaust pipe 513. By operating the exhaust device 514, the inside of the processing chamber 501 can be reduced in pressure to a predetermined pressure, for example, 10 ⁻² Pa.

The transport apparatus 502 which conveys the glass substrate 11 carried in the process chamber 501 is provided in the bottom part of the process chamber 501. The conveying apparatus 502 is provided with the guide rail provided along the longitudinal direction in the bottom part of the process chamber 501, and the movable member guided by this guide rail, and movably provided in a conveyance direction, ie, the said longitudinal direction, At the upper end portion, a support 503 for supporting the glass substrate 11 substantially horizontally is provided. The support 503 is provided with an electrostatic chuck holding the glass substrate 11, a heater for keeping or heating the temperature of the glass substrate 11, a coolant tube, and the like. Moreover, the support stand 503 is comprised so that it may move with a linear motor.

The substrate processing head 504 is provided in the upper part of the process chamber 501 and the substantially center part of a conveyance direction. The substrate processing head 504 is a deposition head 541 for forming the first organic film 15 on the glass substrate 11 by vacuum vapor deposition and a first film formed by irradiating infrared rays onto the glass substrate 11. The infrared irradiation head 542 which softens or fuses the organic film 15, and the hardening process head 543 which hardens a hydrocarbon by irradiating an electron beam or an ultraviolet-ray to the glass substrate 11 are provided.

In addition, in this embodiment, although the apparatus which performs all the deposition, the reflow process, and the hardening process of the 1st organic film 15 was illustrated, the vapor deposition apparatus which vapor-deposits the 1st organic film 15, and the reflow process are performed, You may comprise the reflow processing apparatus and the hardening apparatus which performs hardening processing as individual apparatuses, respectively.

The reflow process is not limited to the deposition of the first organic film 15 after the deposition. However, when the reflow process is performed on the first organic film 15, the surface is flattened, so that when the defect portion is generated, it can be buried, and the second inorganic film 16 is free of defects on the first organic film 15. ) Is preferable because it can be formed.

The vapor deposition head 541 is a mechanism part which blows off the vapor of the hydrocarbon material which consists of paraffin conveyed through the conveyance pipe toward the glass substrate 11 accommodated in the process chamber 501. The vapor generation part 545 arrange | positioned outside the process chamber 501 is connected to the deposition head 541 via the conveyance pipe. The steam generator 545 includes, for example, a stainless steel container and a heating mechanism disposed inside the container. The heating mechanism has a container that can accommodate the hydrocarbon material and is configured to heat the hydrocarbon material by electric power supplied from a power source. Heating of a hydrocarbon material is performed by heating with the said resistor embedded in the container, for example. In this way, the hydrocarbon material stored in the heating mechanism is heated to generate steam of the hydrocarbon material. In addition, the container is connected to the container with a carrier gas supply pipe that supplies a carrier gas made of inert gas, rare gas such as argon (Ar), etc. to the glass substrate 11, and the carrier gas supplied from the carrier gas supply pipe to the container. The vapor of the hydrocarbon material is configured to be supplied from the steam generator 545 to the deposition head 541 via the transfer pipe. In the middle of the carrier gas supply pipe and the carrier pipe, flow rate adjusting valves 544 and 546 for adjusting the supply amount of the carrier gas are provided. The flow regulating valves 544 and 546 are, for example, solenoid valves, and the opening and closing operations of the flow regulating valves 544 and 546 are configured to be controlled by a process controller 550 described later.

The infrared irradiation head 542 is approximately the entire surface of the first organic film 15 formed on the glass substrate 11 (that is, the sealing film) by, for example, conveying the glass substrate 11 by the support 503. And an infrared lamp arranged so as to irradiate infrared rays in the area where (13) is to be formed. The intensity of the infrared rays irradiated from the infrared lamp is sufficient as long as the first organic film 15 formed on the glass substrate 11 can be softened or melted. More preferably, what is necessary is just to comprise so that the infrared rays of intensity | strength which remain in the temperature range which the organic electroluminescent element 12 does not deteriorate, even if infrared rays are irradiated continuously. A power source for supplying power is connected to the infrared lamp, and the supply of power is configured to be controlled by the process controller 550. By controlling the supply of power to the infrared lamp, the process controller 550 heats the first organic film 15 to a temperature at which the first organic film 15 is softened or melted and the organic EL element 12 is not degraded.

In addition, the infrared irradiation head 542 is an example of a means for heating the first organic film 15. For example, the support base 503 may be provided with a hot plate for heating the first organic film 15 instead of the infrared irradiation head 542.

The curing treatment head 543 is, for example, approximately the entire surface of the first organic film 15 formed on the glass substrate 11 (that is, the sealing film) by conveyance of the glass substrate 11 by the support base 503. An electron gun is arranged to irradiate the electron beam (area to be formed), and the operation of the electron gun is controlled by the process controller 550. In addition, when forming the 1st organic film 15 using UV-curable hydrocarbon material, you may equip the hardening process head 543 with the ultraviolet lamp which irradiates an ultraviolet-ray to the glass substrate 11.

In addition, the vapor deposition apparatus 5 is equipped with the process controller 550 which controls each structure part of the vapor deposition apparatus 5. The process controller 550 is connected to a user interface through which a process manager performs a command input operation or the like for managing the vapor deposition apparatus 5. In addition, the process controller 550 stores a storage unit 552 in which a process program for recording control programs, processing condition data, and the like for realizing various processes executed in the deposition apparatus 5 under the control of the process controller 550 is stored. Is connected. The process controller 550 calls and executes an arbitrary process control program according to the instruction from the user interface from the storage unit 552, and under the control of the process controller 550, desired processing in the deposition apparatus 5 is performed. Is done.

In addition, although the example which conveys the glass substrate 11 was demonstrated here, you may comprise so that the support stand 503 may be fixed and the substrate processing head 504 may be scanned with respect to the glass substrate 11.

In addition, when forming the 1st organic film 15 using the hydrocarbon material hardened | cured by an electron beam, you may comprise the vapor deposition apparatus 5, without providing the hardening head 543. As shown in FIG. This is because the electrons in the plasma are irradiated in the step of forming the amorphous carbon 13d at the rear end by plasma CVD, so that the first organic film 15 can be cured in parallel with the formation of the amorphous carbon 13d.

In the present embodiment, the case where the formed hydrocarbon film is cured is described, but the present invention is not limited thereto. However, it is preferable to harden | cure, since it can suppress generation | occurrence | production of the defect part and water immersion by the softening or melting of a hydrocarbon film more.

In the organic electroluminescent device manufacturing apparatus 201 comprised as mentioned above, the organic electroluminescent element 12 is made of the 1st inorganic film 13 and the 1st organic film 15 by the 1st sealing film formation apparatus 27. FIG. A sealed temporary seal 103 is obtained. This temporary sealing body 103 is taken out by the LL 28 from the pressure reduction space to the temporary sealing body storage part 29 in an atmospheric pressure space. The temporary sealing body 103 is temporarily stored in the temporary sealing body storage part 29 in a state where moisture permeability is ensured by the first inorganic film 13 and the first organic film 15, and then in consideration of timing. By the conveying apparatus mentioned above, it conveys to each SiN film forming apparatus 30, the 2nd inorganic film 16 is formed in each temporary sealing body 103, and the organic EL device 104 is obtained.

As described above, the film thickness of the first inorganic film 13 is 100 nm or less and is thin. Although the film formation rate of the first organic film 15 is also determined by the type of hydrocarbon material, it can be formed in a short time even when the film is formed at a thickness of, for example, 500 nm. In the case where the first organic film 15 is an α-CH _x film, the film formation is performed using the same CVD apparatus as that of the SiN film forming apparatus of FIG. ₄ , and treating hydrocarbon gases such as C ₄ H ₆ , CH ₄ , and C ₂ H ₂ . Although used as a gas, the film formation speed is about 10 times faster than that of forming a SiN film, and can be formed in a short time as in a hydrocarbon film. In addition, since the moisture permeability within a predetermined time is ensured, after the temporary storage, various second sealing films can be formed for each of the organic EL devices 104 depending on the use thereof. Depending on the required performance of the organic EL device 104, since the first sealing film has a two-layer structure, the thickness of the second inorganic film 16 is lower than that of the second inorganic film 14 of the first embodiment in which the first sealing film is a single layer. I can thin it. Therefore, the throughput as a whole can be improved.

<Example 3>

8 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus 202 according to a third embodiment of the present invention. 3, the same code | symbol is attached | subjected to the same part as FIG. 3, and detailed description is abbreviate | omitted.

The organic EL device manufacturing apparatus 202 is provided with the SiN film forming apparatus 31, 33, 35 arrange | positioned in series as an example of a 2nd sealing film forming apparatus. When manufacturing the said organic EL device 101 using this organic EL device manufacturing apparatus 202, the temporary sealing body 102 temporarily stored in the temporary sealing body storage part 29 is taken out by a conveying apparatus, It is conveyed to the SiN film forming apparatus 31, and is conveyed to the SiN film forming apparatuses 33 and 35 sequentially using TM32,34.

In this organic EL device manufacturing apparatus 202, a single layer SiN film can be formed as a 2nd sealing film. Therefore, when the temporary sealing body 102 of one body mentioned above is conveyed, the 2nd inorganic film 14 is formed into a film by 1/3 quantity sequentially in the thickness direction. For example, when the second inorganic film 14 made of the SiN film is formed to have a thickness of 1000 nm on the first inorganic film 13 made of the SiN film, approximately 330 nm is formed by each SiN film forming apparatus. Throughput can be improved by conveying several temporary sealing body 102 continuously.

In addition, in the present embodiment, the case where the second inorganic film 14 is formed on the surface of the temporary sealing body 102 using the organic EL device manufacturing apparatus 202 is described. It is good also as forming the 2nd inorganic film 16 in the surface of the temporary sealing body 103 by which a sealing film has a two-layer structure.

The SiN film forming apparatus is not limited to the case where the SiN film forming apparatus is arranged in series as the second sealing film forming apparatus, and other film forming apparatuses (? -CH _x film forming apparatus and hydrocarbon film forming apparatus) may be arranged in series.

<Example 4>

9 is a side sectional view showing an organic EL device 105 according to a fourth embodiment of the present invention, and FIG. 10 schematically shows a structural example of an organic EL device manufacturing apparatus 203 according to a fourth embodiment of the present invention. It is a block diagram. In the figure, the same parts as those in Figs. 1 and 3 are denoted by the same reference numerals and detailed description thereof will be omitted.

In the organic EL device 105 according to the present embodiment, unlike the organic EL device 101 according to the first embodiment, the second sealing film is composed of three layers.

The 1st inorganic film 13 as a 1st sealing film is formed in the surface of the organic electroluminescent element 12, and the temporary sealing body 102 is obtained, and the 2nd inorganic in order on the surface of this temporary sealing body 102 is performed sequentially. The film 17, the second organic film 18, and the third inorganic film 19 are formed to obtain an organic EL device 105. Here, the case where the first inorganic film 13, the second inorganic film 17 and the third inorganic film 19 are made of SiN film and the second organic film 15 is made of α-CH _x will be described. .

The organic EL device manufacturing apparatus 203 is, as an example of the second sealing film forming apparatus, the SiN film forming apparatus 36 arranged in series, the α-CH _x film forming apparatus 38 which is a plasma CVD apparatus, and the SiN film forming. The apparatus 40 is provided. The temporary sealing body 102 temporarily stored in the temporary sealing body storage part 29 is taken out by a conveying apparatus, is conveyed to the SiN film forming apparatus 36, and (alpha) -CH is carried out sequentially using TM (37, 39). _It is conveyed to the _x film forming apparatus 38 and the SiN film forming apparatus 40. For convenience of drawing, the α-CH _x film forming apparatus is referred to as α-CH _x in the drawings.

In this embodiment, since the second sealing film has a three-layer structure, the moisture permeability of the organic EL device 105 is further improved.

11 is a block diagram schematically showing an example of the configuration of another organic EL device manufacturing apparatus 204 for manufacturing the organic EL device 105. In the drawings, the same parts as in FIG. 10 are designated by the same reference numerals, and detailed description thereof will be omitted.

The organic EL device manufacturing apparatus 204 is provided with the SiN film forming apparatus 41 and the (alpha) -CH _x film forming apparatus 43 arrange | positioned in series as an example of a 2nd sealing film forming apparatus. The temporary sealing body 102 temporarily stored in the temporary sealing body storage part 29 is taken out by the conveying apparatus, is conveyed to the SiN film forming apparatus 41, and after the 2nd inorganic film 17 is formed, TM ( It is conveyed to the (alpha) -CH _x film forming apparatus 43 using 42, and the 2nd organic film 18 is formed. And the TM42 is conveyed to the SiN film forming apparatus 41 again, and the 3rd inorganic film 19 is formed.

In this organic EL device manufacturing apparatus 204, the number of 2nd sealing film formation apparatus can be reduced than the organic EL device manufacturing apparatus 203. FIG.

12 is a block diagram schematically illustrating a configuration example of another organic EL device manufacturing apparatus 205 for manufacturing the organic EL device 105. In the drawings, the same parts as in FIG. 10 are designated by the same reference numerals, and detailed description thereof will be omitted.

The organic EL device manufacturing apparatus 205 is a SiN film forming apparatus in which a temporary seal is conveyed from the α-CH _x film forming apparatus 38 to form a third inorganic film 19 of the uppermost layer of the second sealing film. 40) three pieces are provided. In addition, the number of this SiN film forming apparatus 40 is not limited to three.

Therefore, the organic EL device manufacturing apparatus 205 can form a SiN film at substantially the same time using the plurality of SiN film forming apparatus 40 similarly to the organic EL device manufacturing apparatus 2. For example, the first inorganic film 13, the second inorganic film 17, the second hydrocarbon film 18, and the third inorganic film 19 are 100-300 nm, 100 nm, 800 nm, and 1000 nm, respectively. Even in the case of forming the film with a thickness, the amount of film formation per unit time of the third inorganic film 19 increases, and the throughput can be improved as a whole.

FIG. 13: is a block diagram which shows typically the structural example of the other organic electroluminescent device manufacturing apparatus 206 which manufactures the organic electroluminescent device 105. As shown in FIG. In the drawings, the same parts as in FIG. 10 are designated by the same reference numerals, and detailed description thereof will be omitted.

The organic EL device manufacturing apparatus 206 is provided with three SiN film forming apparatuses 47, 49, and 51 arranged in series to form the third inorganic film 19 of the uppermost layer of the second sealing film. In addition, the number of this SiN film forming apparatus is not limited to three.

In the organic EL device manufacturing apparatus 206, the temporary sealing body 102 in which the 2nd hydrocarbon film 18 was formed by the (alpha) -CH _x film forming apparatus 43 is a SiN film forming apparatus (TM39). 47, and are sequentially conveyed to the SiN film forming apparatuses 49 and 51 using TM (48, 50). Therefore, the third inorganic film 19 is formed by the amount of 1/3 in the thickness direction sequentially. For example, when the third inorganic film 19 is formed at a thickness of 1000 nm, approximately 330 nm are formed by each SiN film forming apparatus, and the third inorganic film is continuously conveyed by conveying the plurality of temporary seals 102. The film-forming amount per unit time of (19) increases, and throughput can be improved.

In addition, although the present Example demonstrated the case where the 2nd sealing film which consists of three layers is formed on the surface of the temporary sealing body 102 using the organic electroluminescent device manufacturing apparatus 203-206, it is not limited to this, It is good also as forming a 2nd sealing film which consists of three layers on the surface of the temporary sealing body 103 which consists of two layers of a 1st sealing film. In other words, the configurations of the first sealing film forming apparatus 27 and the second sealing film forming apparatus are not limited to those described in this embodiment.

<Example 5>

14 is a side cross-sectional view showing an organic EL device 106 according to Embodiment 5 of the present invention, and FIG. 15 schematically shows a configuration example of an organic EL device manufacturing apparatus 207 according to Embodiment 5 of the present invention. It is a block diagram. In the figure, the same parts as those in Figs. 1 and 3 are denoted by the same reference numerals and detailed description thereof will be omitted.

In the organic EL device 106 according to the present embodiment, unlike the organic EL devices 101 and 105 according to the first and fourth embodiments, the second sealing film is composed of two layers.

In the organic EL device 106, a first inorganic film 13 as a first sealing film is formed on the surface of the organic EL element 12 to obtain a temporary sealing body 102. On the surface, the 2nd organic film 70 and the 2nd inorganic film 71 are formed sequentially, and the organic electroluminescent device 106 is obtained. Here, a case where the first inorganic film 13 and the second inorganic film 71 are made of SiN film and the second organic film 70 is made of α-CH _x will be described.

The organic EL device manufacturing apparatus 207 is equipped with the (alpha) -CH _x film forming apparatus 44 and SiN film forming apparatus 46 arrange | positioned in series as an example of a 2nd sealing film forming apparatus. The temporary sealing body 102 temporarily stored in the temporary sealing body storage part 29 is taken out by a conveying apparatus, conveyed to the (alpha) -CH _x film forming apparatus 44, and SiN film formation using TM (45). Conveyed to the device 46.

In this embodiment, since the number of layers of the second sealing film is two layers, the manufacturing time is shorter than that of the organic EL device 105 according to the fourth embodiment.

In addition, in this embodiment, although the case where the 2nd sealing film which consists of two layers is formed on the surface of the temporary sealing body 102 using the organic electroluminescent device manufacturing apparatus 207 is demonstrated, it is not limited to this, 1st It is good also as forming a 2nd sealing film which consists of two layers on the surface of the temporary sealing body 103 which consists of two layers. That is, the structure of the 1st sealing film forming apparatus 27 and the 2nd sealing film forming apparatus is not limited to the case demonstrated in this Example.

<Example 6>

16 is a side sectional view showing a bottom emission type organic EL device 107 according to Embodiment 6 of the present invention, and FIG. 17 is a structural example of an organic EL device manufacturing apparatus 208 according to Embodiment 6 of the present invention. It is a block diagram which shows typically. In the figure, the same parts as those in Figs. 1 and 3 are denoted by the same reference numerals and detailed description thereof will be omitted.

In the organic EL device 107 according to the present embodiment, unlike the organic EL device 101 according to the first embodiment, the second inorganic film 72 as the second sealing film is made of Al.

The organic EL device manufacturing apparatus 208 is provided with the Al film forming apparatus 52 which consists of a sputtering apparatus etc. as a 2nd sealing film forming apparatus. The temporary sealing body 102 temporarily stored in the temporary sealing body storage part 29 is taken out by a conveying apparatus, is conveyed to the Al film forming apparatus 52, and the 2nd inorganic film 72 is formed into a film. In the following, for convenience of drawing, the Al film forming apparatus is referred to as Al in the drawing.

In the present embodiment, since the second inorganic film 72 made of Al is formed by sputtering, the film formation time is fast, for example, in the case of a film thickness of about 500 nm, about 1 minute with respect to the temporary seal 102. It can form into a film, and manufacturing time can be shortened.

Even when the second sealing film includes an inorganic film made of Al, the second sealing film can have a two-layer structure and a three-layer structure, and the uppermost layer can have an Al film, similarly to the case where the uppermost layer contains an inorganic film made of SiN. .

18 is a side cross-sectional view showing an organic EL device 108 having a second sealing film having a two-layer structure, and FIG. 19 schematically shows an example of the configuration of an organic EL device manufacturing apparatus 209 for manufacturing the organic EL device 108. A block diagram is shown. In the figure, the same parts as those in Figs. 1 and 3 are denoted by the same reference numerals and detailed description thereof will be omitted.

The organic EL device manufacturing apparatus 209 is equipped with the (alpha) -CH _x film forming apparatus 53 and Al film forming apparatus 55 arrange | positioned in series as a 2nd sealing film forming apparatus. The temporary sealing body 102 temporarily stored in the temporary sealing body storage part 29 is taken out by a conveying apparatus, is conveyed to the (alpha) -CH _x film forming apparatus 53, and the 2nd organic film 73 is formed into a film. . And it transfers to Al film forming apparatus 55 using TM54, and the 2nd inorganic film 74 is formed into a film.

As an example of a film thickness, the 1st inorganic film 13 is 100 nm, the 2nd organic film 73 is 500 nm, and the 2nd inorganic film 74 is 500 nm, for example.

20 is a side sectional view showing an organic EL device 109 having a second sealing film having a three-layer structure, and FIG. 21 schematically shows an example of the configuration of an organic EL device manufacturing apparatus 210 that manufactures the organic EL device 109. A block diagram is shown. In the figure, the same parts as those in Figs. 1 and 3 are denoted by the same reference numerals and detailed description thereof will be omitted.

The organic EL device manufacturing apparatus 210 is provided with the SiN film forming apparatus 56, the (alpha) -CH _x film forming apparatus 58, and the Al film forming apparatus 60 arrange | positioned in series as a 2nd sealing film forming apparatus. Doing. The temporary sealing body 102 temporarily stored in the temporary sealing body storage part 29 is taken out by a conveying apparatus, is conveyed to the SiN film forming apparatus 56, and the 2nd inorganic film 75 which consists of SiN is formed into a film. . And it is conveyed to the (alpha) -CH _x film forming apparatus 58 by TM57, and the 2nd organic film 76 is formed into a film. Moreover, it transfers to Al film forming apparatus 60 using TM 59, and the 3rd inorganic film 77 is formed into a film.

As described above, the film formation speeds of the second organic film 76 made of the α-CH _x film and the third inorganic film 77 made of Al are fast, so that the production time can be shortened, and a thick film as necessary. You can do

In addition, in this embodiment, although the case where the inorganic film which consists of Al is formed as an uppermost layer of a 2nd sealing film was demonstrated, it is not limited to this. It is good also as forming an inorganic film using Al alloy, Ag, Ag alloy, Cu, Cu alloy, etc. Further, by using the Al ₂ O ₃ may be formed as an inorganic film. In addition, when using the Al ₂ O ₃ to form an inorganic film, an organic EL device obtained is not the bottom-emission type.

And although the case where the 2nd sealing film which contains the inorganic film which consists of Al as an upper layer on the surface of the temporary sealing body 102 using the organic electroluminescent device manufacturing apparatuses 208-210 was demonstrated, it is not limited to this. It is also possible to form a second sealing film containing an inorganic film made of Al on the surface of the temporary sealing body 103 composed of two layers of the first sealing film. In other words, the configurations of the first sealing film forming apparatus 27 and the second sealing film forming apparatus are not limited to those described in this embodiment.

&Lt; Example 7 >

Fig. 22 is a side sectional view showing an organic EL device 110 according to Embodiment 7 of the present invention.

The organic EL device 110 is formed by bonding the gas barrier substrate 81 to the temporary sealing body 102 using, for example, an acrylic resin or the like. The gas barrier substrate 81 is formed by forming an inorganic film 80 made of SiN or SiON on a substrate 79 made of a transparent plastic film such as polyester, polyethylene, or polyolefin, for example. The inorganic film 80 may be a single layer or a multilayer.

As shown in FIG. 22, the back surface of the board | substrate 79 of the gas barrier board | substrate 81 is joined to the surface of the temporary sealing body 102 by the adhesive layer 78 which consists of acrylic resins.

In this embodiment, the organic EL device 110 can be manufactured by easily sealing the temporary sealing body 102 without forming a film.

In addition, in this embodiment, although the case where the gas barrier substrate 81 is bonded to the temporary sealing body 102 was demonstrated, it is not limited to this, The gas barrier substrate 80 which bonds the gas barrier substrate 80 to the temporary sealing body 103 is demonstrated. You may use it.

In addition, the structure of a gas barrier board | substrate is also not limited to the case demonstrated in this Example.

&Lt; Example 8 >

Fig. 23 is a side sectional view showing the organic EL device 111 according to the eighth embodiment of the present invention.

The organic EL device 110 forms the second sealing film 14 on the first sealing film 13 of the temporary sealing body 102, and then, on the surface side of the second sealing film 14, an adhesive layer ( The gas barrier substrate 81 described above is bonded to each other via 78. In other words, the gas barrier substrate 81 is bonded to the second sealing film 14 of the organic EL device 101 according to the first embodiment.

In the present embodiment, after the second sealing film 14 is formed, the gas barrier substrate 81 is bonded, whereby the moisture permeability is further improved.

Similarly, on the second inorganic film 16 of the organic EL device 104 according to the second embodiment, on the third inorganic film 19 of the organic EL device 105 according to the fourth embodiment, and the organic according to the fifth embodiment. On the second inorganic film 71 of the EL device 106, on the second inorganic film 72 of the organic EL device 107 according to the sixth embodiment, on the second inorganic film 74 of the organic EL device 108. The gas barrier substrate 81 may be bonded to each other via the adhesive layer on the third inorganic film 77 of the organic EL device 109. In addition, for the organic EL device according to the embodiments 4 to 6, the gas barrier substrate 81 is provided with the temporary sealing body 103 instead of the temporary sealing body 102 via the adhesive layer on the second sealing film. You may join together.

Hereinafter, the result of having evaluated the moisture permeability of the temporary sealing body produced using the organic electroluminescent device manufacturing apparatus which concerns on this invention is demonstrated.

<Performance evaluation examination 1>

Organic formed on the glass substrate 11 using the organic EL device manufacturing apparatus 2 which concerns on Example 1 of this invention, and using the SiN film forming apparatus 3 as 1st sealing film forming apparatus 27. On the surface of the EL element 12, a first sealing film (SiN film) 13 having a thickness of 300 nm and 1000 nm was formed, respectively, to prepare a temporary seal 102.

Each of the produced temporary sealing body 102 and the organic EL element 12 which does not form the 1st sealing film 13 is left to atmospheric pressure space, the relationship between the elapsed days and a light emitting area is investigated, and moisture permeability is Evaluated.

The results are shown in the graph of FIG. In the graph of FIG. 24, the horizontal axis represents the number of days left for waiting, and the vertical axis represents the light emitting area. In the case of the elapsed days, the light emitting area is 100%. As the organic EL element 12 absorbs, a non-light emitting region is generated at the outer edge of the surface of the organic EL element 12, and the light emitting area is reduced.

From FIG. 24, when the first sealing film 13 is not formed, the light emitting area is greatly reduced when three days have elapsed, whereas when the first sealing film 13 is formed, the light emitting area is still three days. It can be seen that there is almost no decrease. When the thickness of the first sealing film 13 is 300 nm, the amount of decrease in the light emission area is slightly larger than that when the thickness is 1000 nm, but the time of storing the temporary sealing body 29 is usually one day. Since the thickness of the first sealing film 13 is about 300 nm, it is assumed that the moisture permeability is sufficiently secured. Therefore, it was confirmed that good moisture permeability is obtained by forming the first sealing film 13 which is a thin film which can be formed in a short time on the surface of the organic EL element 12.

<Performance evaluation examination 2>

The organic electroluminescent device manufacturing apparatus 201 which concerns on Example 2 of this invention was used. However, the 1st sealing film forming apparatus 27 used what arrange | positioned the (alpha) -CH _x film forming apparatus which is a plasma CVD apparatus in series in the SiN film forming apparatus 3 instead of the hydrocarbon film forming apparatus 5 is used. . On the surface of the organic EL element 12 formed on the glass substrate 11, the first inorganic film (SiN film) 13 having a thickness of 300 nm is formed by the SiN film forming apparatus 3, and this first inorganic The first organic film (? -CH _x film) 15 having a thickness of 500 nm, 2000 nm, and 5000 nm was formed on the surface of the film 13 to produce three types of temporary seals 103.

Each produced temporary seal 103 was left to stand in an atmospheric pressure space, and the relationship between the number of days passed and the light emitting area was examined to evaluate moisture permeability.

The results are shown in the graph of FIG. In the graph of FIG. 25, the horizontal axis represents the number of days left for waiting, and the vertical axis represents the light emitting area. In the case of the elapsed days, the light emitting area is 100%.

It can be seen from FIG. 25 that when three days have elapsed, the light emitting area is hardly reduced regardless of the thickness of the first organic film 15. In addition, compared with the graph of FIG. 24, it can be seen that the water vapor permeability is further improved by forming the first organic film 15 having a thickness of 500 nm on the first inorganic film 13 having a thickness of 300 nm. From the above, it was confirmed that better moisture permeability can be obtained by forming the first organic film 15 having a thickness of at least 500 nm on the first inorganic film 13.

As described in Examples 1 to 8 described above, in the present invention, after forming a first sealing film of a thin film having a moisture permeability within a predetermined time on the surface of the organic EL element in a reduced pressure space, it is taken out to an atmospheric pressure space and temporarily It can be temporarily stored in a sealing body storage part, and the 2nd sealing film which has various film types, the number of films, and thickness can be formed for each according to the use and required performance of an organic EL device. And also when forming the 2nd sealing film of a thick film, it forms simultaneously in the thickness direction with respect to a temporary sealing body using the several film-forming apparatuses of the same kind simultaneously, or using the several film-forming apparatuses connected in series. The film-forming amount per unit time increases, and throughput as a whole can be improved. Moreover, an organic EL device can also be manufactured easily by bonding a gas barrier substrate to a temporary sealing body. And after forming a 2nd sealing film on the 1st sealing film of a temporary sealing body, a gas barrier board | substrate can be bonded to the surface of this 2nd sealing film via an adhesive layer, and moisture permeability can be improved more.

Therefore, the throughput as a whole is improved, the freedom of design of the organic EL device is improved, and the convenience is high.

In addition, although the case where the temporary sealing body 102 or 103 was temporarily stored in the temporary sealing body storage part 29 was demonstrated in the said Examples 1-8, it is not limited to this, You may store in a load lock room. In addition, the temporary sealing body storage part 29 or the load lock room is not limited to when it is under atmospheric pressure, and may be in dry atmosphere.

Incidentally, the film type, the number and the thickness of the first sealing film and the second sealing film are not limited to those described in Examples 1 to 8.

Moreover, although the case where it manufactures using each organic EL device manufacturing apparatus 2 and 201-210 which arrangement | positioning is set previously is demonstrated, it is not limited to this, A some SiN film forming apparatus is provided in an organic EL device manufacturing apparatus. , an α-CH _x film forming apparatus, an Al film forming apparatus, and the like, and the film forming apparatus to be used and the order of use thereof may be determined and formed in accordance with the layer structure of the second sealing film.

Moreover, the manufacturing method of this invention can be applied also to manufacture of display devices other than an organic EL device.

2, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210: organic EL device manufacturing apparatus
3, 30, 31, 33, 35, 36, 40, 41, 46, 47, 49, 51: SiN film forming apparatus
5: hydrocarbon film forming apparatus
6: second sealing film forming portion
61: loader
62: LL
38, 43, 44, 53: α-CH _x forming apparatus
11: glass substrate
11a: anode layer
12: organic EL device
13: 1st sealing film, 1st inorganic film
14: second sealing film
16, 17, 71, 72, 74, 75: second inorganic film
15: first organic film
16: second inorganic film
18, 70, 73, 76: second hydrocarbon film
19, 77: third inorganic film
27: first sealing film forming device
28: LL
29: temporary seal storage
52, 55: Al film forming apparatus
78: adhesive layer
79: substrate
80: inorganic film
81: gas barrier substrate
101, 104, 105, 106, 107, 108, 109, 110, 111: organic EL device
102, 103: temporary seal

Claims (9)

In the display device manufacturing apparatus which manufactures a display device by forming the sealing film for sealing the said display element in a display element,
First sealing film forming means for forming a first sealing film on the surface of the display element under reduced pressure;
Second sealing film forming means for forming a second sealing film on the formed first sealing film;
Storage means for storing the display element on which the first sealing film is formed for a predetermined time;
Means for conveying the display element on which the first sealing film is formed from the first sealing film forming means to the storage means;
And a means for conveying the display element stored by the storage means from the storage means to the second sealing film forming apparatus. The method of claim 1,
A plurality of said 2nd sealing film formation means are provided, The display device manufacturing apparatus characterized by the above-mentioned. In the manufacturing method of the display device which manufactures a display device by forming the sealing film for sealing the said display element in a display element,
A first sealing film forming step of forming a first sealing film on the surface of the display element under reduced pressure by first sealing film forming means;
Conveying the display element on which the first sealing film is formed from the first sealing film forming means to the storage means;
Storing the conveyed display element by the storage means for a predetermined time;
Conveying the stored display element to the second sealing film forming means;
And a second sealing film forming step of forming a second sealing film on the first sealing film of the conveyed display element by the second sealing film forming means. The method of claim 3, wherein
In the second sealing film forming step, the second sealing film is formed at substantially the same time on a plurality of display elements on which the first sealing film is formed. The method according to claim 3 or 4,
The said 1st sealing film contains the inorganic film which consists of inorganic materials, The manufacturing method of the display device characterized by the above-mentioned. The method of claim 5, wherein
The first sealing film is formed by laminating an organic film made of an organic material on the inorganic film. 7. The method according to any one of claims 3 to 6,
The second sealing film includes an inorganic film made of an inorganic material on the uppermost layer. 8. The method according to any one of claims 3 to 7,
The said 2nd sealing film contains the organic film which consists of organic materials, The manufacturing method of the display device characterized by the above-mentioned. It was manufactured by the manufacturing method of the display device in any one of Claims 3-8, The display device characterized by the above-mentioned.

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