KR101685148B1 - Display device manufacturing apparatus, display device manufacturing method, and display device - Google Patents

Abstract

It is possible to obtain a final product of a display device having various film structures according to required performance, and to provide a display device manufacturing apparatus and display device having good throughput, A manufacturing method and a display device are provided. The first sealing film is formed on the surface of the organic EL element by the first sealing film forming apparatus 27, and a temporary sealing body is obtained. This temporary sealing member is taken out from the reduced pressure space to the temporary sealing member storage portion 29 in the atmospheric pressure space by the LL 28. The temporary sealing body is temporarily stored in the temporary sealing body storage portion 29 in a state in which the moisture permeability is ensured by the first sealing film, and then the timing is set so that each second sealing film forming portion 6 ), And the second sealing film is formed in the temporary sealing body in each SiN film forming apparatus 30. [0050]

Description

TECHNICAL FIELD [0001] The present invention relates to a display device manufacturing apparatus, a display device manufacturing method, and a display device. BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

The present invention relates to a display device manufacturing apparatus, a display device manufacturing method, and a display device for forming a sealing film for sealing a display element.

2. Description of the Related Art In recent years, organic electroluminescent devices using, for example, electroluminescence (EL) as display elements have been developed. The organic EL element has advantages such as low power consumption, self-luminescence, and excellent viewing angle as compared with a liquid crystal display (LCD), as compared with a cathode ray tube and the like, and future development is expected.

However, a display element such as an organic EL element is weak in moisture, light emission brightness is lowered due to moisture penetrated from a defective portion of the element, or a non-light emitting region called a dark spot is generated. (Hereinafter, an organic EL device will be described as an example, and a device in which a sealing film is formed on the surface of the organic EL device is referred to as an organic EL device). As the sealing film, an inorganic layer made of an inorganic material such as silicon nitride (hereinafter referred to as SiN) or aluminum oxide is used. A sealing film using a laminated structure of an inorganic layer and an organic layer made of an organic material such as a UV curable resin has been proposed (for example, Patent Documents 1 to 3).

Japanese Patent Application Laid-Open No. 10-312883 Japanese Patent Application Laid-Open No. 4-267097 Japanese Patent Application Laid-Open No. 64-041192

However, in order to ensure sufficient moisture permeability of the organic EL device, it is necessary to form a thick sealing film which buries the particles attached to the surface of the substrate. In the case where a thin sealing film in which particles are not buried is formed, a defective portion is generated between the particle and the sealing layer, and moisture may invade from the defective portion.

In order to evaluate the moisture permeability of the organic EL device, an environmental test at 60 캜 and a humidity of 90% is conducted. In order to pass the environmental test, for example, when a SiN film is formed as a sealing layer, . In this case, it takes about 40 minutes to form a film by the CVD (Chemical Vapor Deposition) method, and the same amount of time is required for dry cleaning. When a film is formed by the CVD method, it takes a long time to obtain a thick film even in other film types.

Therefore, there is a problem that the throughput is lowered.

Also in the organic EL devices of Patent Documents 1 to 3, it is necessary to increase the film thickness of the sealing film in order to secure a high moisture permeability, and there is a problem that the throughput is lowered similarly to the above.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a display device having various film structures according to required performance, A manufacturing method of a display device, and a display device.

A display device manufacturing apparatus according to the present invention is a display device manufacturing apparatus for manufacturing a display device by forming a sealing film for sealing the display element on a display element, wherein a first sealing film is formed on the surface of the display element under reduced pressure A second sealing film forming means for forming a second sealing film on the formed first sealing film; storage means for storing the display element on which the first sealing film is formed for a predetermined time; 1 means for transporting the display element having the sealing film formed thereon from the first sealing film forming means to the storage means and means for transporting the display element stored by the storing means from the storage means to the second sealing film forming apparatus And FIG.

A manufacturing method of a display device according to the present invention is a manufacturing method of a display device for manufacturing a display device by forming a sealing film for sealing the display element on a display element, A first sealing film forming step of forming a first sealing film on the surface of the display element, a step of transporting the display element on which the first sealing film is formed from the first sealing film forming means to the storage means, A step of holding the display element by a storage means for a predetermined period of time, a step of transporting the stored display element to a second sealing film forming means, and a step of forming, on the first sealing film of the conveyed display element And a second sealing film forming step of forming a second sealing film.

A display device according to the present invention is characterized by being manufactured by the above-described method of manufacturing a display device.

According to the present invention, a first sealing film of a thin film ensuring moisture permeability within a predetermined time is formed on the surface of a display element in a reduced-pressure space, and a temporary sealing body of the display device (hereinafter referred to as a temporary sealing body) , It is taken out into the atmospheric pressure space and temporarily stored, and a variety of second sealing films can be formed depending on the use of the display device. Further, when forming the second sealing film, which is a thick film, a plurality of film forming apparatuses are used at the same time, or a plurality of film forming apparatuses connected in series are sequentially formed on the temporary sealing body, Can be improved.

1 is a side sectional view showing an organic EL device as a display device according to Embodiment 1 of the present invention.
2A to 2C are explanatory diagrams conceptually showing a manufacturing method of an organic EL device.
Fig. 3 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus according to Embodiment 1 of the present invention.
4 is a side cross-sectional view schematically showing one configuration example in the case where the first sealing film forming apparatus is an SiN film forming apparatus for forming an SiN film as a first sealing film.
5A to 5D are explanatory diagrams conceptually showing a manufacturing method of an organic EL device as a display device according to a second embodiment of the present invention.
6 is a block diagram schematically showing an example of the configuration of an organic EL device manufacturing apparatus according to Embodiment 2 of the present invention.
7 is a side cross-sectional view schematically showing an example of the configuration of a hydrocarbon film forming apparatus.
Fig. 8 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus according to Embodiment 3 of the present invention.
9 is a side sectional view showing an organic EL device according to Embodiment 4 of the present invention.
10 is a block diagram schematically showing an example of the configuration of an organic EL device manufacturing apparatus according to Embodiment 4 of the present invention.
Fig. 11 is a block diagram schematically showing a configuration example of another organic EL device manufacturing apparatus.
Fig. 12 is a block diagram schematically showing a configuration example of another organic EL device manufacturing apparatus.
Fig. 13 is a block diagram schematically showing a configuration example of another organic EL device manufacturing apparatus.
14 is a side sectional view showing an organic EL device according to Embodiment 5 of the present invention.
FIG. 15 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus according to Embodiment 5 of the present invention. FIG.
16 is a side sectional view showing an organic EL device according to Embodiment 6 of the present invention.
17 is a block diagram schematically showing an example of the configuration of an organic EL device manufacturing apparatus according to Embodiment 6 of the present invention.
18 is a side sectional view showing an organic EL device having a second sealing film of a two-layer structure.
19 is a block diagram schematically showing an example of the configuration of an organic EL device manufacturing apparatus.
20 is a side sectional view showing an organic EL device having a second sealing film of a three-layer structure.
21 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus.
22 is a side sectional view showing an organic EL device according to Embodiment 7 of the present invention.
23 is a side sectional view showing an organic EL device according to Embodiment 8 of the present invention.
Fig. 24 is a graph showing the result of examining the relationship between the elapsed time and the number of days and the light emission area of the temporary sealing body. Fig.
25 is a graph showing a result of examining the relationship between the elapsed time and the number of days and the light emitting area of the other temporary sealing body.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail based on the drawings showing embodiments thereof.

A display device according to the present invention is a display device in which a first sealing film which is a thin film having ensured moisture permeability within a predetermined time is formed on the surface of a plurality of display elements formed on a substrate in a reduced pressure space to prepare a temporary sealing body, And then temporarily storing the second sealing film on the first sealing film in accordance with the use of the display device. The material and the layer structure (either one of a single layer and a multi-layer) of the first sealing film and the second sealing film are appropriately set in accordance with the moisture permeability required based on the use of the display device. The second sealing film is not limited to the case of forming the film, and the gas barrier substrate may be bonded to the surface of the temporary sealing body as the second sealing film. Further, in the display device according to the present invention, after the second sealing film is formed on the first sealing film of the temporary sealing body, the gas barrier substrate may be bonded to the surface of the second sealing film with the adhesive layer interposed therebetween.

As a material of the first sealing film, for example, an organic material such as a hydrocarbon such as paraffin, amorphous hydrocarbon (hereinafter referred to as? -CH _x ), an inorganic material such as silicon nitride (SiN), silicon oxynitride Materials. As described above, the first sealing film may be composed of a multilayer, but when the display element is made of an organic material, from the viewpoint that a chemical reaction does not occur with the display element, the film formed directly on the display element It is preferable that it is made of a material. Examples of the material of the second sealing film include inorganic materials such as the aforementioned organic materials such as SiN, SiON, Al, and aluminum oxide (Al ₂ O ₃ ). The second sealing film may be composed of a multilayer, but from the viewpoint that the moisture permeability is better, the uppermost layer of the second sealing film is preferably made of an inorganic material. The SiN film, the SiON film and the? -CH _x film are formed by plasma CVD, the hydrocarbon film is formed by physical vapor deposition (PVD), and the Al film and Al ₂ O ₃ film are formed by sputtering.

The thickness of the first sealing film may be such a thickness as to ensure the moisture permeability when the temporary sealing body is taken out of the reduced pressure space formed of the first sealing film into the atmospheric pressure space and temporarily stored. That is, the thickness may be such that moisture absorption and deterioration due to the atmosphere does not occur. An appropriate thickness can be set according to the material of the film, the time for temporary storage in the atmospheric pressure space, and the like. The thickness of the second sealing film can be appropriately set in accordance with the moisture permeability required based on the use of the display device.

When the second sealing film is formed directly on the first sealing film by CVD, it is also possible to remove water adhering to the surface of the first sealing film by plasma treatment of an inert gas such as argon. In this case, the adhesion between the first sealing film and the second sealing film is improved, and the sealing property can be improved.

A display device manufacturing apparatus according to the present invention comprises a temporary sealing body forming section for forming a first sealing film on the surface of a display element under a reduced pressure to obtain a temporary sealing body and a temporary sealing body forming section for temporarily sealing from the first sealing film forming apparatus of the temporary sealing body forming section (Temporary sealing material storage part), means for carrying in the stored temporary sealing material, and means for bringing the temporary sealing material into this temporary sealing material by means of this means, And a second sealing film forming section for forming a second sealing film to obtain a display device. The temporary sealing body forming portion and the second sealing film forming portion are separated. The display device manufacturing apparatus may include a plurality of second sealing film forming units of the same type. In this case, the display apparatus manufacturing apparatus may be configured to transport the temporary sealing body to the plurality of second sealing film forming units arranged in parallel from the temporary sealing body storing unit And the temporary sealing member may be transferred from the temporary sealing member storage unit to the plurality of second sealing film formation units connected in series.

Hereinafter, the specific structure and manufacturing method of the organic EL device when the organic EL device is applied as the display device of the present invention will be described in detail.

≪ Example 1 >

Fig. 1 is a side sectional view showing an organic EL device 101 as a display device according to Embodiment 1 of the present invention, and Figs. 2A to 2C are explanatory views conceptually showing a manufacturing method of the organic EL device 101. Fig.

The organic EL device 101 includes an organic EL device 101 which is formed by laminating a cathode layer 11a made of, for example, an ITO (Indium Tin Oxide) film, a light emitting layer and a cathode layer 12g on a glass substrate 11, The whole of each layer of the EL element 12 is sealed by the first sealing film 13 and the first sealing film 13 is sealed by the second sealing film 14. [ Here, the case where the first sealing film 13 and the second sealing film 14 have a single-layer structure will be described.

The first sealing film 13 is preferably made of an inorganic material from the viewpoint that a chemical reaction does not occur with the organic EL element 12. [ Examples of the inorganic material include SiN and SiON. Examples of the material of the second sealing film 14 include inorganic materials such as SiN and SiON, and organic materials such as hydrocarbons and? -CH _x . From the viewpoint that the moisture permeability is better, it is preferable to use an inorganic material. The case where the first sealing film 13 and the second sealing film 14 are made of SiN will be described below. The SiN film is formed by the plasma CVD method.

The anode layer 11a is a transparent electrode, for example, an ITO film, capable of transmitting light generated in the light emitting layer.

The organic layer of the organic EL device 12 has a six-layer structure in which the first layer to the sixth layer are laminated by, for example, vacuum vapor deposition. The hole transport layer 12b as the first layer, the hole transport layer 12b as the second layer, the blue light emitting layer 12c as the third layer, the red light emitting layer 12d as the fourth layer, the green light emitting layer 12e as the fifth layer, , And the sixth layer is the electron transport layer 12f. The configurations of the first to sixth layers described above are merely examples.

The cathode layer 12g is a film formed of silver, aluminum, an aluminum alloy, a lithium aluminum alloy, magnesium, or a silver alloy formed by vapor deposition.

2A, after the organic EL device 12 is formed on the glass substrate 11 on which the anode layer 11a is formed, the organic EL device 101 is formed as shown in Fig. 2B The first sealing film 13 is formed on the surface of the glass substrate 11 and the organic EL element 12 on which the anode layer 11a is formed. Thereby, the temporary sealing member 102 is obtained.

The thickness of the first sealing film 13 is preferably set to a thickness that can ensure the moisture permeability when the temporary sealing member 102 is taken out of the reduced pressure space formed with the first sealing film 13 into the atmospheric pressure space and temporarily stored do. That is, the thickness may be such that moisture absorption and deterioration are not caused by the atmosphere. An appropriate thickness can be set according to the material of the film, the time for temporary storage in the atmospheric pressure space, and the like. When the first sealing film 13 is made of SiN, which is an inorganic material, the thickness is set to about 50 to 500 nm for temporary storage for about 24 hours as in this embodiment.

2C, the second sealing film 14 is formed on the first sealing film 13 of the temporarily stored temporary sealing body 102. Then, as shown in Fig. Thereby, the organic EL device 101 is obtained. The thickness of the second sealing film 14 is appropriately set in accordance with the moisture permeability required based on the use of the organic EL device.

Fig. 3 is a block diagram schematically showing a configuration example of the organic EL device manufacturing apparatus 2 according to the first embodiment of the present invention. The organic EL device manufacturing apparatus 2 according to the present embodiment includes a loader 21, a load lock chamber (hereinafter referred to as LL) 22, and a film forming apparatus 23, a transfer module (hereinafter referred to as TM) 24, an electrode forming device 25, a TM 26, a first sealing film forming device 27, an LL 28 and a temporary sealing material storage portion 29 And three second sealing film forming portions 6, respectively. The provisional sealing member forming portion 27 is constructed by the loader 21, the LL 22, the film forming device 23, the TM 24, the electrode forming device 25, the TM 26 and the first sealing film forming device 27 do. The second sealing film forming portion 6 includes the SiN film forming device 30 for forming the SiN film by the plasma CVD method as an example of the loader 61, the LL 62 and the second sealing film forming device.

Hereinafter, for convenience of construction, the SiN film forming apparatus is denoted as SiN in the drawing. The number of the second sealing film forming units 6 (SiN film forming devices 30) provided in the organic EL device manufacturing apparatus 2 is not limited to three, but may be a plurality.

The loader 21, the LL 22, the film forming device 23, the TM 24, the electrode forming device 25, the TM 26, the first sealing film forming device 27 and the LL 28 are transported Direction, but may be connected in-line (vacuum-sealed). For example, the film forming apparatus 23, the electrode forming apparatus 25, and the first sealing film forming apparatus 27 may be disposed around the common transport chamber.

The loader 21 is a device for bringing the glass substrate 11, for example, the glass substrate 11 having the anode layer 11a formed on its surface into the organic EL device manufacturing apparatus 2 in advance. The LL 22, the TM 24, the TM 26 and the LL 28 are devices for transferring the glass substrate 11 between the processing apparatuses.

The film forming device 23 is formed by a vacuum vapor deposition method on a glass substrate 11 with a hole injection layer 12a, a hole transport layer 12b, a blue light emitting layer 12c, a red light emitting layer 12d, a green light emitting layer 12e, (12f).

The electrode forming device 25 is formed by depositing or sputtering a pattern mask such as silver, aluminum, an aluminum alloy, a lithium aluminum alloy, or an alloy of magnesium and silver to form a negative electrode layer 12g ).

The first sealing film forming apparatus 27 is an apparatus for sealing various films formed on the glass substrate 11 by forming a first sealing film 13 such as an inorganic film by CVD or vapor deposition .

The glass substrate 11 is carried into the LL 22 through the one gate valve from the loader 21 and then the LL 22 is put into the reduced pressure state so that the glass substrate 11 And is carried out to the film forming apparatus 23. In the state where the film forming apparatus 23, the TM 24, the electrode forming apparatus 25, the TM 26 and the first sealing film forming apparatus 27 are held in a reduced pressure state, And the first sealing film 13 is formed on the surface of the organic EL element 12 as described above to obtain the temporary sealing member 102. [

The first sealing film forming apparatus 27, the LL 28 and the temporary sealing member storage unit 29 are connected via two gate valves. The temporary sealing member storage unit 29 is constituted by a carrying unit including a carrying device such as a robot arm and a cassette mounting unit for mounting and connecting the cassettes. The cassette is a carrying container for housing a plurality of temporary sealing bodies 102 (that is, one piece as the glass substrate 11) in a horizontal state.

The inside of the LL 28 is depressurized and the gate valve between the first sealing film forming apparatus 27 and the first sealing film forming apparatus 27 is opened so that the temporary sealing member 102 is moved from the first sealing film forming apparatus 27 to the LL 28 Out. Thereafter, the LL 28 is opened at atmospheric pressure, the gate valve between the LL 28 and the temporary sealing member storage unit 29 is opened, and the temporary sealing member 102 is temporarily stored from the LL 28 to the temporary sealing member storage unit 29 And is accommodated in the cassette of the cassette mounting portion.

The temporary sealing member storage unit 29 may be provided with a temporary sealing member placement unit for mounting the temporary sealing member 102 one by one without the cassette placement unit.

The temporary sealing material storage portion 29 is kept closed and is kept under a pressure state by depressurization or nitrogen filling or the like so that the LL 28 is not opened to the atmosphere but is discharged from the first sealing film forming device 27 The temporary sealing member 102 may be taken out to the temporary sealing member storage unit 29. [ In addition, the inside of the cassette may be filled with nitrogen instead of sealing the inside of the temporary sealing member storage portion 29 with nitrogen.

The organic EL device manufacturing apparatus 2 is provided with a temporary sealing member storage section other than the temporary sealing member storage section 29 and the temporary sealing member 102 is provided separately from the temporary sealing member storage section 29 , And is transported to the temporary sealing member storage unit by a transporting device such as an automatic guided vehicle (AGV), a robot, a belt conveyor, and a gas flotation conveying device including gas blowing means for moving the temporary sealing member 102 to move .

The temporary sealing member 102 temporarily stored in the temporary sealing member storage unit 29 or the temporary sealing member storage unit can be temporarily stored in a storage unit such as an AGV, a robot, a belt conveyor, a gas floating transfer device, etc., Is transported to the installation place of the second sealing film forming section 6 and carried into the loader 61 and carried into the SiN film forming apparatus 30 held in the reduced pressure state via the LL 62. [

4 shows an example of a configuration in the case where the first sealing film forming apparatus 27 is an SiN film forming apparatus (plasma CVD apparatus) 3 (hereinafter also referred to as a CVD apparatus) forming an SiN film as a first sealing film And Fig. The CVD apparatus 3 is, for example, a RLSA (Radial Line Slot Antenna) type, airtight, and has a substantially cylindrical processing chamber 301 that is grounded. The treatment chamber 301 is made of, for example, aluminum and has a flat plate-like bottom wall 301a formed with a circular opening 310 at a substantially central portion thereof and a side wall provided around the bottom wall 301a, . A cylindrical liner made of ceramics such as quartz or Al ₂ O ₃ may be provided on the inner periphery of the treatment chamber 301.

On the side wall of the processing chamber 301, an annular gas introducing member 315 is provided. A processing gas supply system 316 is connected to the gas introducing member 315. The gas introducing member 315 is arranged, for example, in a shower shape. A predetermined process gas is introduced from the process gas supply system 316 into the process chamber 301 via the gas introducing member 315. [ As the process gas, an appropriate gas may be used depending on the type and content of the plasma process. For example, when an SiN film is formed by plasma CVD, monosilane (SiH ₄ ) gas, ammonia (NH ₃ ) gas, nitrogen (N ₂ ) gas, or the like is used.

The side wall of the processing chamber 301 is provided with an inlet port 325 for carrying the glass substrate 11 in and out between the TM 26 and the LL 28 adjacent to the CVD apparatus 3, And gate valves 326 and 356 for opening and closing the inlet 325 and the outlet 355 are provided.

A cylindrical exhaust chamber 311 having a bottom protruding downward is provided in the bottom wall 301a of the processing chamber 301 so as to communicate with the opening 310. [ An exhaust pipe 323 is formed on the side wall of the exhaust chamber 311 and an exhaust device 324 including a high speed vacuum pump is connected to the exhaust pipe 323. [ The gas in the processing chamber 301 is uniformly discharged into the space 311a of the exhaust chamber 311 by operating the exhaust device 324 and exhausted through the exhaust pipe 323. [ Therefore, it is possible to depressurize the inside of the processing chamber 301 at a high degree of vacuum, for example, 0.133 Pa.

A columnar member 303 made of ceramic such as AlN is projected vertically at the center of the bottom of the exhaust chamber 311 and a glass substrate 11 to be plasma- And a sample stage 302 for supporting the sample stage 302. A guide 304 for holding the glass substrate 11 is provided at the outer edge of the sample stage 302. A heater power source 306 for heating the glass substrate 11 and a DC power source 308 for electrostatic attraction are connected to the sample stage 302.

A ring-shaped support portion 327 is provided along the periphery of the opening formed in the upper portion of the treatment chamber 301. A disk-like dielectric window 328 made of a dielectric material such as quartz or Al ₂ O ₃ and permeable to microwaves is hermetically attached to the support portion 327 via a seal member 329.

Above the dielectric window 328, a disk-shaped slot plate 331 is provided so as to face the sample stage 302. The slot plate 331 is retained at the upper end of the side wall of the process chamber 301 while being in contact with the dielectric window 328. The slot plate 331 is made of a conductor, for example, a copper plate or an aluminum plate whose surface is plated with gold, and has a structure in which a plurality of microwave radiating slots 332 penetrate in a predetermined pattern. That is, the slot plate 331 constitutes an RLSA antenna. The microwave radiation slots 332 are, for example, in the shape of a long groove, and the adjacent pair of the microwave radiation slots 332 are arranged close to each other so as to form a substantially L shape. The plurality of pairs of microwave radiating slots 332 may be arranged concentrically. The length and arrangement interval of the microwave radiation slots 332 are determined according to the wavelength of the microwave.

On the upper surface of the slot plate 331, dielectric plates 333 having a larger dielectric constant than vacuum are provided so as to be in surface contact with each other. The dielectric plate 333 has a plate-shaped dielectric plate portion. A hole portion is formed in a substantially central portion of the dielectric disk portion. Further, a cylindrical microwave incidence portion protrudes from the periphery of the hole portion substantially perpendicularly to the dielectric disk portion.

A disc-shaped shielding lid 334 is provided on the upper surface of the processing chamber 301 so as to cover the slot plate 331 and the dielectric plate 333. The shield cover body 334 is made of metal such as aluminum or stainless steel. The upper surface of the treatment chamber 301 and the shield lid 334 are sealed by a seal member 335.

The shielding plate 332 is provided with a lid body side cooling water passage 334a inside the shield lid body 334 so that cooling water flows through the lid body side cooling water passage 334a to form a slot plate 331, a dielectric window 328, , And the shield cover body 334 is cooled. Further, the shield cover body 334 is grounded.

An opening 336 is formed at the center of the upper wall of the shield lid 334, and a waveguide 337 is connected to the opening. The waveguide 337 includes a coaxial waveguide 337a having a circular shape in cross section and extending upward from the opening 336 of the shield lid 334 and a coaxial waveguide 337b having a rectangular cross section extending in the horizontal direction connected to the upper end of the coaxial waveguide 337a And a microwave generator 339 is connected to an end of the rectangular waveguide 337b via a matching circuit 338. The microwave generator 339 is connected to the end of the rectangular waveguide 337b. A microwave generated by the microwave generator 339, for example, a microwave having a frequency of 2.45 GHz is propagated to the slot plate 331 through the waveguide 337. [ The microwave frequency may be 8.35 GHz, 1.98 GHz, 915 MHz, or the like. And a mode converter 340 is provided at an end of the rectangular waveguide 337b on the connection side with the coaxial waveguide 337a. The coaxial waveguide 337a has a tubular coaxial outer conductor 342 and a coaxial inner conductor 341 disposed along the center line of the coaxial outer conductor 342. The lower end of the coaxial inner conductor 341 is connected to the coaxial waveguide 337a, As shown in Fig. The microwave incident portion of the dielectric plate 333 is inserted into the coaxial waveguide 337a.

The CVD apparatus 3 also includes a process controller 350 that controls each component of the CVD apparatus 3. The process controller 350 is provided with a user interface 351 consisting of a keyboard for performing a command input operation or the like for managing the CVD apparatus 3 by the process manager and a display for visualizing and displaying the operating status of the CVD apparatus 3 Respectively. The process controller 350 is also provided with a storage unit 352 storing a control program for realizing various processes executed by the CVD apparatus 3 under the control of the process controller 350, Respectively. The process controller 350 invokes and executes an arbitrary process control program according to an instruction from the user interface 351 from the storage unit 352 and executes the process control program in the CVD apparatus 3 under the control of the process controller 350 Desired processing is performed.

The SiN film forming apparatus 30 also has the same structure as the SiN film forming apparatus 3.

The operation of the organic EL device manufacturing apparatus 2 configured as described above will be briefly described. The glass substrate 11 on which the anode layer 11a is formed on the surface in advance is carried into the film forming apparatus 23 via the loader 21 and the LL 22. In the film forming apparatus 23, the organic EL elements 12 are formed on the glass substrate 11. Subsequently, the film is carried into the electrode forming apparatus 25 by the TM 24, and the cathode layer 12g is formed. Next, the glass substrate 11 is transported to the first sealing film forming apparatus 27 by the TM 26 and is transported to the surface of the organic EL element 12 by the first sealing film forming apparatus 27, The sealing film 13 is formed, and the temporary sealing member 102 is obtained. The temporary sealing member 102 is taken out from the reduced pressure space to the temporary sealing member storage portion 29 in the atmospheric pressure space by the LL 28. The temporary sealing member 102 is temporarily stored in the temporary sealing member storage unit 29 in a state where the moisture permeability is ensured by the first sealing film 13 and then the temporary sealing member 102 is temporarily stored And is conveyed to the installation place of each SiN film forming apparatus 30 by the above-mentioned conveying apparatus in consideration of timing, waiting for accumulation. The temporary sealing member 102 is carried into the SiN film forming apparatus 30 via the loader 61 and the LL 62 and the second sealing film 14 is formed on the temporary sealing member 102. [

The film thickness of the first sealing film 13 is 500 nm or less, and the film formation time is short. For example, when a SiN film is formed to a thickness of 1000 nm as the second sealing film 14, a time of about 40 minutes is required for one organic EL element. In this embodiment, a plurality of SiN film forming apparatuses 30 The amount of film formation per unit time is increased, and the throughput can be improved as a whole without delay in the film formation process of the sealing film as in the conventional case.

≪ Example 2 >

5A to 5D are explanatory diagrams conceptually showing a manufacturing method of the organic EL device 104 as a display device according to the second embodiment of the present invention. In the figure, the same components as those in Figs. 2A to 2C are denoted by the same reference numerals, and a detailed description thereof will be omitted.

Unlike the temporary sealing member 102 of the organic EL device 101, the temporary sealing member 103 of the organic EL device 104 is composed of two layers of the first sealing film. Here, the case where the first sealing film is composed of the first inorganic film 13 made of an inorganic material and the first organic film 15 made of an organic material will be described. Examples of the inorganic material include SiN and SiON. Examples of the organic material include hydrocarbons,? -CH _x , and the like. The case where the first inorganic film 13 is made of an SiN film and the first organic film 15 is a paraffin represented by a molecular formula CxHy (x is 20 or more) as a hydrocarbon will be described below. When the first organic film 15 is a hydrocarbon film, it is formed by (vacuum physical) deposition as described later. When the first organic film 15 is an? -CH _x film, it may be formed by a plasma CVD method using C ₄ H ₆ , CH ₄ , C ₂ H ₂ or the like as a hydrocarbon gas.

5A, the organic EL device 12 is first formed on the glass substrate 11 on which the anode layer 11a is formed, and then, as shown in FIG. 5B, The first inorganic film 13 is formed on the surface of the glass substrate 11 and the organic EL element 12 on which the anode layer 11a is formed. 5C, a temporary sealing member 103 is obtained by forming the first organic film 15 on the first inorganic film 13. As shown in FIG.

The thickness of the first sealing film is set to such a thickness as to ensure the moisture permeability when the temporary sealing body 103 is taken out of the reduced-pressure space formed of the first sealing film into the atmospheric pressure space and temporarily stored. In other words, it may be a thickness that does not cause moisture absorption and deterioration. An appropriate thickness can be set according to the material of the film, the time for temporary storage in the atmospheric pressure space, and the like. As an example, the thickness of the first inorganic film 13 when made of SiN is about 50 nm to 500 nm, and the thickness when the first organic film 15 is made of paraffin is about 100 nm to 1000 nm .

Then, as shown in Fig. 5D, on the first organic film (hydrocarbon film) 15 of the temporarily-stored temporary sealing body 103, a second inorganic film (for example, 16 are formed, whereby the organic EL device 104 is obtained.

Fig. 6 is a block diagram schematically showing a configuration example of the organic EL device manufacturing apparatus 201 according to the second embodiment of the present invention. In the figure, the same parts as those in Fig. 3 are denoted by the same reference numerals, and a detailed description thereof will be omitted. In Fig. 6, the loader 61 and the LL 62 of the second sealing film forming portion are omitted (the same applies hereinafter).

In the organic EL device manufacturing apparatus 201, the first sealing film forming apparatus 27 includes a SiN film forming apparatus 3, a TM 4, a hydrocarbon film forming apparatus 5 composed of a vapor deposition apparatus, Are arranged in series. The temporary sealing member 103 obtained by the first sealing film forming apparatus 27 is taken out to the temporary sealing member storage unit 29 in the atmospheric pressure space and is separated by one by one , Or cassettes or the like, temporarily stored for plural bodies, and then transported to the three SiN film forming devices 30, respectively.

Fig. 7 is a side sectional view schematically showing an example of the construction of a hydrocarbon film forming apparatus (vapor deposition apparatus) 5. As shown in Fig. The evaporation apparatus 5 includes a processing chamber for accommodating the glass substrate 11 and performing vapor deposition, reflow processing and curing treatment of the first organic film (hydrocarbon film) 15 on the glass substrate 11 501). The treatment chamber 501 has a hollow, substantially rectangular parallelepiped shape in which the carrying direction is the longitudinal direction, and is made of aluminum, stainless steel, or the like. An inlet port 511 and an outlet port 515 for transporting the glass substrate 11 to the inside and the outside of the processing chamber 501 are formed on both longitudinal end surfaces of the processing chamber 501 and gate valves 512 and 516 The inlet port 511 and the outlet port 515 are opened and closed. An exhaust pipe 513 is formed at a suitable position in the process chamber 501 and an exhaust device 514 including a high speed vacuum pump is connected to the exhaust pipe 513. [ The inside of the processing chamber 501 can be depressurized to a predetermined pressure, for example, 10 ^-2 Pa, by operating the exhaust device 514. [

A transfer device 502 for transferring the glass substrate 11 carried into the process chamber 501 is provided at the bottom of the process chamber 501. The conveying device 502 includes a guide rail provided along the longitudinal direction at the bottom of the process chamber 501 and a moving member which is guided by the guide rail and is movable in the carrying direction, At the upper end, a support base 503 for supporting the glass substrate 11 substantially horizontally is provided. An electrostatic chuck for holding the glass substrate 11, a heater for heating or heating the temperature of the glass substrate 11, a refrigerant tube, and the like are provided in the support base 503. Further, the support table 503 is configured to be moved by the linear motor.

A substrate processing head 504 is provided at an upper portion of the processing chamber 501 and at a substantially central portion in the carrying direction. The substrate processing head 504 includes a vapor deposition head 541 for forming a first organic film 15 on a glass substrate 11 by a vacuum vapor deposition method and a vapor deposition head 541 for irradiating the glass substrate 11 with infrared light, An infrared irradiation head 542 for softening or melting the organic film 15 and a curing treatment head 543 for curing the hydrocarbon by irradiating the glass substrate 11 with an electron beam or an ultraviolet ray.

In the present embodiment, the apparatus for performing both of the vapor deposition, the reflow treatment and the curing treatment of the first organic film 15 is exemplified. However, it is also possible to employ a vapor deposition apparatus for vapor deposition of the first organic film 15, The reflow processing apparatus and the curing processing apparatus for performing the curing processing may be configured as a single apparatus.

Further, the present invention is not limited to the case where the reflow process is performed after the deposition of the first organic film 15. However, when the first organic film 15 is subjected to the reflow treatment, the surface is planarized, so that it can be buried when the defect portion is generated, and the second inorganic film 16 ) Can be formed.

The vapor deposition head 541 is a mechanism for jetting the vapor of the hydrocarbon material, which is made of paraffin, conveyed through the transfer tube toward the glass substrate 11 housed in the processing chamber 501. A vapor generating portion 545 disposed outside the process chamber 501 is connected to the vapor deposition head 541 via a transport pipe. The steam generating unit 545 includes, for example, a container made of stainless steel and a heating mechanism disposed inside the container. The heating mechanism has a container capable of accommodating a hydrocarbon material, and is configured to heat the hydrocarbon material by electric power supplied from a power source. Heating of the hydrocarbon material is performed, for example, by heating with the resistor embedded in the container. In this way, the hydrocarbon material contained in the heating mechanism is heated to generate steam of the hydrocarbon material. The container is also connected to a carrier gas supply pipe for supplying a carrier gas composed of an inert gas, a rare gas such as argon (Ar) or the like to the glass substrate 11, and in addition to the carrier gas supplied from the carrier gas supply pipe to the container, The vapor of the hydrocarbon material is supplied from the vapor generating portion 545 to the vapor deposition head 541 via the return pipe. Flow regulating valves 544 and 546 for regulating the supply amount of the carrier gas are provided in the middle of the carrier gas supply pipe and the return pipe. The flow rate adjusting valves 544 and 546 are, for example, electromagnetic valves, and the opening and closing operations of the flow rate adjusting valves 544 and 546 are controlled by the process controller 550, which will be described later.

The infrared irradiation head 542 is provided on the substantially entire surface of the first organic film 15 formed on the glass substrate 11 (that is, on the surface of the sealing film 50) by transporting the glass substrate 11, (I.e., a region where the infrared ray 13 should be formed). It is sufficient that the intensity of the infrared ray irradiated from the infrared lamp can soften or melt the first organic film 15 formed on the glass substrate 11. More preferably, infrared rays having an intensity that stays in a temperature range in which the organic EL element 12 does not deteriorate may be irradiated even when infrared rays are continuously irradiated. A power supply for supplying power is connected to the infrared lamp, and the supply of electric power is controlled by the process controller 550. The process controller 550 controls the supply of electric power to the infrared lamp so as to heat the first organic film 15 to a temperature at which the first organic film 15 is softened or melted and the organic EL element 12 is not deteriorated.

The infrared irradiation head 542 is an example of a means for heating the first organic film 15. For example, a hot plate or the like for heating the first organic film 15 may be provided in the support base 503 instead of the infrared irradiation head 542. [

The curing treatment head 543 is provided on the substantially entire surface of the first organic film 15 formed on the glass substrate 11 (that is, on the surface of the sealing film 50) by transporting the glass substrate 11, (The region where the electron beam 13 should be formed), and the operation of the electron gun is controlled by the process controller 550. When the first organic film 15 is formed using a UV curable hydrocarbon material, an ultraviolet lamp for irradiating ultraviolet rays to the glass substrate 11 may be provided in the curing processing head 543. [

The deposition apparatus 5 also includes a process controller 550 for controlling each component of the deposition apparatus 5. [ The process controller 550 is connected to a user interface for performing a command input operation or the like in order to manage the deposition apparatus 5 by the process manager. The process controller 550 is also provided with a storage unit 552 storing a control program for realizing various processes to be executed in the deposition apparatus 5 under the control of the process controller 550, Respectively. The process controller 550 invokes and executes an arbitrary process control program according to an instruction from the user interface and executes the desired processing in the deposition apparatus 5 under the control of the process controller 550 Is done.

The example in which the glass substrate 11 is transported is described here. Alternatively, the substrate 503 may be fixed and the substrate processing head 504 may be scanned with respect to the glass substrate 11. [

When the first organic film 15 is formed using a hydrocarbon material that is cured with an electron beam, the vapor deposition apparatus 5 may be configured without the curing processing head 543. [ This is because the electrons in the plasma are irradiated in the step of forming the amorphous carbon at the rear end by plasma CVD, so that the first organic film 15 can be cured simultaneously with the formation of the amorphous carbon.

In this embodiment, the case where the formed hydrocarbon film is cured is explained, but the present invention is not limited to this. However, it is preferable that the hardened layer is capable of further suppressing occurrence of defects due to softening or melting of the hydrocarbon film and immersion of water.

In the organic EL device manufacturing apparatus 201 configured as described above, the organic EL element 12 is formed by the first inorganic film 13 and the first organic film 15 by the first sealing film forming apparatus 27 A sealed temporary sealing body 103 is obtained. This temporary sealing member 103 is taken out from the reduced pressure space to the temporary sealing member storage unit 29 in the atmospheric pressure space by the LL 28. [ The temporary sealing member 103 is temporarily stored in the temporary sealing member storage unit 29 in a state in which the moisture permeability is secured by the first inorganic film 13 and the first organic film 15, Is transported to each SiN film forming apparatus 30 by the above-described transport apparatus and the second inorganic film 16 is formed on each temporary sealing member 103 to obtain the organic EL device 104. [

As described above, the film thickness of the first inorganic film 13 is 100 nm or less and thin. In addition, although the deposition rate of the first organic film 15 is determined by the kind of the hydrocarbon material, even if the deposition is carried out at a thickness of 500 nm, the deposition can be performed in a short time. When the first organic film 15 is the? -CH _x film, the film formation is performed by using the same CVD apparatus as that of the SiN film forming apparatus of FIG. 4 and by treating a hydrocarbon gas such as C ₄ H ₆ , CH ₄ , C ₂ H ₂ , Gas. However, the deposition rate is about ten times as fast as that in the case of forming the SiN film, and the deposition can be performed in a short time like the hydrocarbon film. Since the moisture permeability within a predetermined time is ensured, various second sealing films can be formed in accordance with the use of the organic EL device 104 after temporary storage. The first sealing film has a two-layer structure, and therefore the thickness of the second inorganic film 16 is smaller than the thickness of the second inorganic film 14 of the first embodiment in which the first sealing film is a single layer, depending on the required performance of the organic EL device 104 It can be thinned. Therefore, the throughput as a whole can be improved.

≪ Example 3 >

Fig. 8 is a block diagram schematically showing a configuration example of the organic EL device manufacturing apparatus 202 according to the third embodiment of the present invention. In the figure, the same parts as those in Fig. 3 are denoted by the same reference numerals, and a detailed description thereof will be omitted.

The organic EL device manufacturing apparatus 202 is provided with three SiN film forming apparatuses 31, 33, and 35 arranged in series as an example of the second sealing film forming apparatus. When the organic EL device 101 is manufactured using the organic EL device manufacturing apparatus 202, the temporary sealing member 102 temporarily stored in the temporary sealing member storage unit 29 is taken out by the transfer device SiN film forming apparatus 31 and sequentially transported to the SiN film forming apparatuses 33 and 35 by using the TMs 32 and 34. [

In this organic EL device manufacturing apparatus 202, a single-layered SiN film can be formed as the second sealing film. Therefore, when the above-mentioned one temporary sealing member 102 is transported, the second inorganic film 14 is formed sequentially by 1/3 in the thickness direction. For example, when the second inorganic film 14 made of an SiN film is formed to a thickness of 1000 nm on the first inorganic film 13 made of an SiN film, the film is formed to about 330 nm by each SiN film forming apparatus, By continuously conveying the plurality of temporary sealing members 102, the throughput can be improved.

In the present embodiment, the second inorganic film 14 is formed on the surface of the temporary sealing member 102 by using the organic EL device manufacturing apparatus 202. However, the present invention is not limited to this, The second inorganic film 16 may be formed on the surface of the temporary sealing member 103 in which the sealing film has a two-layer structure.

The second sealing film forming apparatus is not limited to the arrangement of the SiN film forming apparatuses in series, but other film forming apparatuses (? -CH _x film forming apparatuses and hydrocarbon film forming apparatuses) may be arranged in series.

<Example 4>

Fig. 9 is a side sectional view showing an organic EL device 105 according to a fourth embodiment of the present invention. Fig. 10 schematically shows an example of the configuration of the organic EL device manufacturing apparatus 203 according to the fourth embodiment of the present invention. It is a block diagram. 1 and 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

The organic EL device 105 according to the present embodiment differs from the organic EL device 101 according to the first embodiment in that the second sealing film has three layers.

The first inorganic film 13 serving as the first sealing film is formed on the surface of the organic EL element 12 to obtain the temporary sealing member 102. The surface of the temporary sealing member 102 is, A film 17, a second organic film 18 and a third inorganic film 19 are formed to obtain the organic EL device 105. [ Here, the case where the first inorganic film 13, the second inorganic film 17, and the third inorganic film 19 are made of an SiN film and the second organic film 18 is made of? -CH _x is described .

The organic EL device manufacturing apparatus 203 is an example of the second sealing film forming apparatus and includes an SiN film forming apparatus 36 arranged in series, an? -CH _x film forming apparatus 38 as a plasma CVD apparatus, a SiN film forming apparatus Device 40 as shown in Fig. The temporary sealing member 102 temporarily stored in the temporary sealing member storage unit 29 is taken out by the transfer device and conveyed to the SiN film forming device 36. The temporary sealing member 102 is sequentially transferred to the? _x film forming apparatus 38 and the SiN film forming apparatus 40, respectively. An α-CH _x film forming apparatus for convenience in the drawings of the construction hereinafter denoted α-CH _x d.

In this embodiment, since the second sealing film has a three-layer structure, the moisture permeability of the organic EL device 105 is further improved.

11 is a block diagram schematically showing an example of the configuration of another organic EL device manufacturing apparatus 204 for manufacturing the organic EL device 105. As shown in Fig. In the figure, the same parts as those in Fig. 10 are denoted by the same reference numerals, and a detailed description thereof will be omitted.

The organic EL device manufacturing apparatus 204 includes an SiN film forming apparatus 41 and an? -CH _x film forming apparatus 43 arranged in series as an example of the second sealing film forming apparatus. The temporary sealing member 102 temporarily stored in the temporary sealing member storage unit 29 is taken out by the transfer device and conveyed to the SiN film forming device 41. After the second inorganic film 17 is formed, 42 is transferred to the? -CH _x film forming apparatus 43, and the second organic film 18 is formed. Then, the film is transported again to the SiN film forming apparatus 41 by the TM 42, and the third inorganic film 19 is formed.

In the organic EL device manufacturing apparatus 204, the number of the second sealing film forming apparatuses can be reduced as compared with the organic EL device manufacturing apparatus 203.

12 is a block diagram schematically showing an example of the configuration of another organic EL device manufacturing apparatus 205 for manufacturing the organic EL device 105. As shown in Fig. In the figure, the same parts as those in Fig. 10 are denoted by the same reference numerals, and a detailed description thereof will be omitted.

The organic EL device manufacturing apparatus 205 is a device for manufacturing the SiN film forming apparatus (hereinafter, referred to as &quot; substrate &quot;) in which the temporary sealing body is separately transported from the? -CH _x film forming apparatus 38 to form the third inorganic film 19 as the uppermost layer of the second sealing film 40 are provided. The number of SiN film forming apparatuses 40 is not limited to three.

Therefore, the organic EL device manufacturing apparatus 205 can form the SiN film at substantially the same time by using the plurality of SiN film forming apparatuses 40, similarly to the organic EL device manufacturing apparatus 2. [ For example, the first inorganic film 13, the second inorganic film 17, the second hydrocarbon film 18, and the third inorganic film 19 are formed to have a thickness of 100 to 300 nm, 100 nm, 800 nm, The film formation amount per unit time of the third inorganic film 19 is increased and the throughput can be improved as a whole.

13 is a block diagram schematically showing an example of the configuration of another organic EL device manufacturing apparatus 206 for manufacturing the organic EL device 105. As shown in Fig. In the figure, the same parts as those in Fig. 10 are denoted by the same reference numerals, and a detailed description thereof will be omitted.

The organic EL device manufacturing apparatus 206 has three SiN film forming apparatuses 47, 49, 51 arranged in series for forming the third inorganic film 19 on the uppermost layer of the second sealing film. The number of SiN film forming apparatuses is not limited to three.

In the organic EL device manufacturing apparatus 206, the temporary sealing member 102 in which the second hydrocarbon film 18 is formed by the? -CH _x film forming apparatus 43 is transferred to the SiN film forming apparatus 47, and are sequentially transported to the SiN film forming devices 49, 51 by using the TMs 48, 50. Therefore, the third inorganic film 19 is formed in an order of 1/3 the thickness direction. For example, when the third inorganic film 19 is formed to have a thickness of 1000 nm, a film of approximately 330 nm is formed by each SiN film forming apparatus, and a plurality of temporary sealing members 102 are successively carried, The amount of film deposition per unit time of the film 19 increases, and the throughput can be improved.

In the present embodiment, a case has been described in which the second sealing film composed of three layers is formed on the surface of the temporary sealing member 102 by using the organic EL device manufacturing apparatuses 203 to 206. However, the present invention is not limited to this, A second sealing film composed of three layers may be formed on the surface of the temporary sealing member 103 in which the first sealing film is composed of two layers. That is, the configurations of the first sealing film forming apparatus 27 and the second sealing film forming apparatus are not limited to those described in this embodiment.

&Lt; Example 5 >

Fig. 14 is a side sectional view showing an organic EL device 106 according to Embodiment 5 of the present invention, and Fig. 15 is a schematic diagram showing an example of a configuration of an organic EL device manufacturing apparatus 207 according to Embodiment 5 of the present invention It is a block diagram. 1 and 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

The organic EL device 106 according to the present embodiment differs from the organic EL devices 101 and 105 according to the first and fourth embodiments in that the second sealing film has two layers.

The organic EL device 106 has the first sealing film 102 as the first sealing film formed on the surface of the organic EL device 12 to obtain the temporary sealing member 102, The second organic film 70 and the second inorganic film 71 are sequentially formed on the surface, and the organic EL device 106 is obtained. Here, the case where the first inorganic film 13 and the second inorganic film 71 are made of an SiN film and the second organic film 70 is made of? -CH _x will be described.

The organic EL device manufacturing apparatus 207 is an example of the second sealing film forming apparatus and includes an? -CH _x film forming apparatus 44 and an SiN film forming apparatus 46 arranged in series. The temporary sealing member 102 temporarily stored in the temporary sealing member storage unit 29 is taken out by the transfer device and transferred to the? -CH _x film forming device 44, and the Si (45) And returned to the device 46.

In this embodiment, since the number of layers of the second sealing film is two, the manufacturing time is shorter than that of the organic EL device 105 according to the fourth embodiment.

In the present embodiment, a case has been described in which the second sealing film composed of two layers is formed on the surface of the temporary sealing member 102 by using the organic EL device manufacturing apparatus 207. However, the present invention is not limited to this, A second sealing film composed of two layers may be formed on the surface of the temporary sealing member 103 in which the sealing film is composed of two layers. That is, the configurations of the first sealing film forming apparatus 27 and the second sealing film forming apparatus are not limited to the case described in this embodiment.

&Lt; Example 6 >

Fig. 16 is a side sectional view showing a bottom emission type organic EL device 107 according to Embodiment 6 of the present invention, Fig. 17 is a structural example of an organic EL device manufacturing apparatus 208 according to Embodiment 6 of the present invention As shown in FIG. 1 and 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

The organic EL device 107 according to this embodiment differs from the organic EL device 101 according to the first embodiment in that the second inorganic film 72 as the second sealing film is made of Al.

The organic EL device manufacturing apparatus 208 is provided with an Al film forming apparatus 52 including a sputtering apparatus or the like as a second sealing film forming apparatus. The temporary sealing member 102 temporarily stored in the temporary sealing member storage unit 29 is taken out by the transfer device and conveyed to the Al film forming apparatus 52 to form the second inorganic film 72. [ Hereinafter, for convenience of construction, the Al film forming apparatus is denoted by Al in the drawing.

In this embodiment, since the second inorganic film 72 made of Al is formed by sputtering, the film forming time is fast. For example, when the film thickness is about 500 nm, the film thickness of the temporary sealing body 102 is about 1 minute The film can be formed, and the manufacturing time can be shortened.

Even when an inorganic film made of Al is included in the second sealing film, the second sealing film can have a two-layer structure and a three-layer structure, and the uppermost layer can be an Al film as in the case of including an inorganic film made of SiN in the uppermost layer .

Fig. 18 is a side sectional view showing an organic EL device 108 having a second sealing film of a two-layer structure, Fig. 19 is a sectional side view showing an example of an organic EL device manufacturing apparatus 209 for manufacturing the organic EL device 108, FIG. 1 and 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

The organic EL device manufacturing apparatus 209 is provided with an? -CH _x film forming apparatus 53 and an Al film forming apparatus 55 arranged in series as a second sealing film forming apparatus. The temporary sealing member 102 temporarily stored in the temporary sealing member storage unit 29 is taken out by the transfer device and conveyed to the? -CH _x film forming device 53, and the second organic film 73 is formed . Then, the film is transported to the Al film forming apparatus 55 using the TM 54, and the second inorganic film 74 is formed.

As an example of the film thickness, the first inorganic film 13 is 100 nm, the second organic film 73 is 500 nm, and the second inorganic film 74 is 500 nm.

20 is a side sectional view showing an organic EL device 109 having a second sealing film of a three-layer structure, and Fig. 21 is a schematic sectional view showing an example of the configuration of an organic EL device manufacturing apparatus 210 for manufacturing the organic EL device 109 FIG. 1 and 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

The organic EL device manufacturing apparatus 210 includes a SiN film forming apparatus 56, an? -CH _x film forming apparatus 58 and an Al film forming apparatus 60 arranged in series as a second sealing film forming apparatus . The temporary sealing member 102 temporarily stored in the temporary sealing member storage unit 29 is taken out by the transfer device and transported to the SiN film forming device 56 to form the second inorganic film 75 made of SiN . Then, the film is transported to the? -CH _x film forming device 58 by the TM 57, and the second organic film 76 is formed. Further, the film is transported to the Al film forming apparatus 60 by using the TM 59, and the third inorganic film 77 is formed.

As described above, since the deposition rate of the second organic film 76 made of the? -CH _x film and the third inorganic film 77 made of Al is fast, the manufacturing time can be shortened, and if necessary, .

In this embodiment, the case where the inorganic film made of Al is formed as the uppermost layer of the second sealing film is described, but the present invention is not limited to this. An Al alloy, Ag, an Ag alloy, Cu and a Cu alloy may be used to form an inorganic film. Alternatively, the inorganic film may be formed using Al ₂ O ₃ . In addition, when an inorganic film is formed using Al ₂ O ₃ , the obtained organic EL device is not bottom emissive.

A description has been given of a case where a second sealing film containing an inorganic film made of Al as an upper layer is formed on the surface of the temporary sealing member 102 by using the organic EL device manufacturing apparatuses 208 to 210. However, A second sealing film containing an inorganic film made of Al may be formed on the surface of the temporary sealing body 103 in which the first sealing film is composed of two layers. That is, the configurations of the first sealing film forming apparatus 27 and the second sealing film forming apparatus are not limited to those described in this embodiment.

&Lt; Example 7 >

22 is a side cross-sectional view showing the organic EL device 110 according to the seventh embodiment of the present invention.

The organic EL device 110 is formed by bonding a gas barrier substrate 81 to a temporary sealing member 102 by using, for example, acrylic resin or the like. The gas barrier substrate 81 is formed by forming an inorganic film 80 made of SiN or SiON on a substrate 79 made of, for example, a transparent plastic film such as polyester, polyethylene or polyolefin. The inorganic film 80 may be a single layer or a multilayer.

The back surface of the substrate 79 of the gas barrier substrate 81 is bonded to the surface of the temporary sealing member 102 by an adhesive layer 78 made of an acrylic resin as shown in Fig.

In the present embodiment, the organic EL device 110 can be manufactured by sealing the temporary sealing member 102 easily without forming a film.

Although the gas barrier substrate 81 is bonded to the temporary sealing member 102 in this embodiment, the present invention is not limited to this, and the gas barrier substrate 81 may be bonded to the temporary sealing member 103 .

The configuration of the gas barrier substrate is not limited to the case described in this embodiment.

&Lt; Example 8 >

23 is a side sectional view showing the organic EL device 111 according to the eighth embodiment of the present invention.

The organic EL device 111 is formed so that the second sealing film 14 is formed on the first sealing film 13 of the temporary sealing member 102 and then the adhesive layer 78, and the gas barrier substrate 81 described above. That is, it has a structure in which the gas barrier substrate 81 is bonded to the second sealing film 14 of the organic EL device 101 according to the first embodiment.

In this embodiment, since the gas barrier substrate 81 is bonded after the second sealing film 14 is formed, the moisture permeability is further improved.

Similarly, on the second inorganic film 16 of the organic EL device 104 according to the second embodiment, on the third inorganic film 19 of the organic EL device 105 according to the fourth embodiment, On the second inorganic film 71 of the EL device 106 and on the second inorganic film 72 of the organic EL device 107 according to the sixth embodiment and on the second inorganic film 74 of the organic EL device 108, And the gas barrier substrate 81 may be bonded to the third inorganic film 77 of the organic EL device 109 via an adhesive layer. In the organic EL devices according to Examples 4 to 6, the temporary sealing member 103 was used in place of the temporary sealing member 102, and the gas barrier substrate 81 was provided on the second sealing film with an adhesive layer interposed therebetween. As shown in Fig.

Hereinafter, results of evaluating the moisture permeability of the temporary sealing member manufactured using the apparatus for producing an organic EL device according to the present invention will be described.

<Performance evaluation test 1>

The organic EL device manufacturing apparatus 2 according to the first embodiment of the present invention is used and the SiN film forming apparatus 3 as the first sealing film forming apparatus 27 is used to form the organic A first sealing film (SiN film) 13 having a thickness of 300 nm and a thickness of 1000 nm was formed on the surface of the EL element 12 to prepare a temporary sealing member 102.

Each of the prepared temporary sealing member 102 and the organic EL element 12 not provided with the first sealing film 13 was left in an atmospheric pressure space and the relationship between the number of days elapsed and the light emitting area was examined, .

The results are shown in the graph of Fig. In the graph of Fig. 24, the abscissa indicates the lapse of the waiting period and the number of days, and the ordinate indicates the luminescence area. And the light emitting area when the number of days elapsed is 0 is 100%. As the organic EL element 12 absorbs (absorbs) water, a non-luminescent region is generated in the outer edge portion of the surface of the organic EL element 12, and the luminescent area is reduced.

24 shows that in the case where the first sealing film 13 is not formed, the light-emitting area is greatly reduced after 3 days, whereas when the first sealing film 13 is formed, the light- It can be seen that it hardly decreases. When the thickness of the first sealing film 13 is 300 nm, the amount of decrease in the luminescence area over time is slightly larger than in the case where the thickness is 1000 nm. Normally, the time to be stored in the temporary sealing material storage portion 29 is 1 day It is assumed that the moisture permeability is sufficiently ensured if the thickness of the first sealing film 13 is 300 nm. Therefore, it was confirmed that a good moisture permeability was obtained by forming the first sealing film 13, which is a thin film that can be formed in a short time, on the surface of the organic EL element 12. [

&Lt; Performance evaluation test 2 &

An organic EL device manufacturing apparatus 201 according to the second embodiment of the present invention was used. It should be noted that the first sealing film forming apparatus 27 was obtained by arranging the? -CH _x film forming apparatus, which is a plasma CVD apparatus, in series in the SiN film forming apparatus 3 instead of the hydrocarbon film forming apparatus 5 . A first inorganic film (SiN film) 13 having a thickness of 300 nm is formed on the surface of the organic EL element 12 formed on the glass substrate 11 by the SiN film forming apparatus 3, A first organic film (? -CH _x film) 15 having thicknesses of 500 nm, 2000 nm, and 5000 nm was formed on the surface of the film 13 to produce three types of temporary sealing members 103.

Each manufactured temporary sealing member 103 was left in the atmospheric pressure space, and the relationship between the number of days elapsed and the light emitting area was examined to evaluate the moisture permeability.

The results are shown in the graph of Fig. In the graph of Fig. 25, the abscissa indicates the lapse of waiting time and the number of days, and the ordinate indicates the luminescence area. And the light emitting area when the number of days elapsed is 0 is 100%.

From Fig. 25, it can be seen that, when three days have elapsed, the light emitting area does not substantially decrease regardless of the thickness of the first organic film 15. [ 24, it can be seen that the moisture permeability is further improved by forming the first organic film 15 having a thickness of 500 nm on the first inorganic film 13 having a thickness of 300 nm. From the above, it was confirmed that more excellent moisture permeability can be obtained by forming the first organic film 15 having a thickness of at least 500 nm on the first inorganic film 13.

As described in Embodiments 1 to 8 above, in the present invention, after forming the first sealing film of the thin film ensuring the moisture permeability within a predetermined time on the surface of the organic EL element in the reduced pressure space, The second sealing film having various film types, the number of films, and the thickness can be formed according to the application and required performance of the organic EL device. Even in the case of forming the second sealing film of the thick film, a plurality of film forming apparatuses of the same kind may be used at the same time, or a plurality of the same kind of film forming apparatuses connected in series may be used and the film is sequentially formed in the thickness direction with respect to the temporary sealing body The amount of film formation per unit time increases, and the throughput as a whole can be improved. Further, the organic EL device can be easily manufactured by bonding the gas barrier substrate to the temporary sealing body. Then, after the second sealing film is formed on the first sealing film of the temporary sealing body, the gas barrier substrate may be bonded to the surface of the second sealing film with the adhesive layer interposed therebetween to improve the moisture permeability.

Therefore, the throughput as a whole is improved, the degree of freedom in designing the organic EL device is improved, and the convenience is high.

In the first to eighth embodiments, the temporary sealing member 102 or 103 is temporarily stored in the temporary sealing member storage unit 29. However, the present invention is not limited to this, and the temporary sealing member 102 or 103 may be stored in the load lock chamber. The temporary seal member storage unit 29 or the load lock chamber is not limited to the case where it is under atmospheric pressure, and it may be in a dry atmosphere.

The film types, the number and the thicknesses of the first sealing film and the second sealing film are not limited to those described in the first to eighth embodiments.

And the organic EL device manufacturing apparatuses 2 and 201 to 210 in which the arrangement is previously set are described. However, the present invention is not limited to this, and a plurality of SiN film forming apparatuses , an? -CH _x film-forming apparatus, an Al film-forming apparatus, and the like, and it is also possible to determine the film-forming apparatus to be used and the order of use thereof in accordance with the layer structure of the second sealing film.

Further, the manufacturing method of the present invention can be applied to the manufacture of display devices other than organic EL devices.

2, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210: organic EL device manufacturing apparatus
3, 30, 31, 33, 35, 36, 40, 41, 46, 47, 49, 51:
5: Hydrocarbon film forming device
6: Second sealing film forming part
61: Loader
62: LL
38, 43, 44, 53: alpha -CH _x forming device
11: glass substrate
11a: anode layer
12: Organic EL device
13: first sealing film, first inorganic film
14: second sealing film
16, 17, 71, 72, 74, 75:
15: First organic film
16: second inorganic film
18, 70, 73, 76: Second hydrocarbon film
19, 77: Third inorganic film
27: First sealing film forming apparatus
28: LL
29: Temporary sealing member storage unit
52, and 55: Al film forming apparatus
78: Adhesive layer
79: substrate
80: inorganic film
81: Gas barrier substrate
101, 104, 105, 106, 107, 108, 109, 110, 111: organic EL device
102, 103: Temporary sealing member

Claims (9)

A display device manufacturing apparatus for manufacturing a display device by forming a sealing film for sealing the display device on a display device,
A first sealing film forming means for forming a first sealing film on a surface of the display element under a reduced pressure,
A second sealing film forming means for forming a second sealing film on the formed first sealing film,
Storage means for storing the display element on which the first sealing film is formed for a predetermined time while being placed on the placement portion at a predetermined position,
Means for transporting the display element having the first sealing film formed thereon from the first sealing film forming means to the storage means,
And means for transporting the display element stored by the storage means from the storage means to the second sealing film forming apparatus. The method according to claim 1,
And a plurality of said second sealing film forming means are provided. A manufacturing method of a display device for manufacturing a display device by forming a sealing film for sealing the display element on a display element,
A first sealing film forming step of forming a first sealing film on the surface of the display element under a reduced pressure by the first sealing film forming means,
Transporting the display element having the first sealing film formed thereon from the first sealing film forming means to the storage means;
A step of holding the conveyed display element for a predetermined time while being placed on the placement section at a position determined by the storage means;
Transporting the stored display element to the second sealing film forming means,
And a second sealing film forming step of forming a second sealing film on the first sealing film of the conveyed display element by the second sealing film forming means. The method of claim 3,
Wherein the second sealing film forming step forms the second sealing film simultaneously on the plurality of display elements having the first sealing film formed thereon. The method according to claim 3 or 4,
Wherein the first sealing film comprises an inorganic film made of an inorganic material. 6. The method of claim 5,
Wherein the first sealing film is formed by laminating an organic film made of an organic material on the inorganic film. The method according to claim 3 or 4,
Wherein the second sealing film comprises an inorganic film made of an inorganic material in the uppermost layer. The method according to claim 3 or 4,
Wherein the second sealing film comprises an organic film made of an organic material. delete

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