TW201401610A - Organic electronic device, method for producing the same, and plasma treatment device - Google Patents

Abstract

An organic electronic device according to this invention includes an organic layer 51 formed on a glass substrate G (anode 50), and a sealing film which covers the organic layer 51. The sealing film includes a aCHx film 54 containing carbon component and a SiNx film 55 without containing carbon component. The aCHx film 54 has a first aCHx film 54-1 and a second aCHx film 54-2. The first aCHx film 54-1 is formed by microwave plasma CVD. The second aCHx film 54-2 has more dangling bonds of carbon components than the first aCHx film 54-1 by applying bias electric field with high frequency power supply of microwave plasma treatment device, during or after forming the aCHx film 54 by microwave plasma CVD.

Description

Organic electronic component, manufacturing method of organic electronic component, plasma processing apparatus

The present invention relates to an organic electronic component, a method of manufacturing an organic electronic component, and a plasma processing apparatus.

In recent years, we have developed a light-emitting element using an organic compound, that is, an organic electroluminescence (EL: Electro Luminescence) element. Since the organic EL element emits light, it consumes less power, and has a better viewing angle than a liquid crystal display (LCD) or the like, which is an advantage.

The most basic structure of the organic EL element is a sandwich structure in which an anode layer, a light-emitting layer, and a cathode layer are stacked on a glass substrate. Among them, the luminescent layer is less resistant to moisture or oxygen. If moisture or oxygen is mixed in, the characteristics will change, which is the main cause of non-lighting points (dark spots).

Therefore, in the manufacture of an organic electronic component having an organic EL element, the organic EL element is encapsulated so as not to allow external moisture or oxygen to permeate into the element. That is, in the manufacture of an organic electronic component, an anode layer, a light-emitting layer, and a cathode layer are sequentially formed on a glass substrate, and an encapsulation film layer is formed thereon.

As the above-mentioned package film, for example, a tantalum nitride film (SiN film) is used. The tantalum nitride film is formed, for example, by chemical vapor deposition (CVD). The tantalum nitride film is used to excite a raw material gas containing a methanthan (SiH ₄ ) gas or a nitrogen (N ₂ ) gas, for example, by microwave power, to generate a plasma, and to form the plasma by using the generated plasma.

[Practical Technical Literature]

[Patent Literature]

Patent Document 1 International Publication No. 2009/028485

However, it is possible to generate pinholes in the tantalum nitride film. Therefore, for example, when a package film is formed in a single layer of a tantalum nitride film, moisture or oxygen may penetrate into the organic EL element through the pinhole of the tantalum nitride film.

From this point of view, instead of using a single layer of tantalum nitride film, for example, an amorphous hydrocarbon film is laminated with a tantalum nitride film, thereby suppressing moisture or oxygen from passing through the pinhole of the tantalum nitride film to the organic EL. Component penetration.

However, since the amorphous hydrocarbon film has a relatively low barrier property against moisture or oxygen, in order to improve the encapsulating performance of the encapsulating film, the number of laminations of the tantalum nitride film has to be increased. However, since the tantalum nitride film has a slower film formation rate than the amorphous hydrocarbon film, if the number of laminated tantalum nitride films is increased, the yield of the film formation of the package film is lowered.

Thus, an embodiment of the present invention has an object of preventing a reduction in the film formation yield of the package film of the organic EL element and improving the package performance of the package film.

An organic electronic component according to an aspect of the present invention includes: an organic component formed on a substrate to be processed, and an encapsulation film covering the organic component. The encapsulating film has an organic layer containing a carbon component and an inorganic layer containing no carbon component. The organic layer has: a first organic layer, and an unbonded hand of the carbon component More second organic layer than the first organic layer.

According to various aspects and embodiments of the present invention, it is possible to suppress a decrease in the film formation yield of the package film of the organic EL element and to improve the package performance of the package film.

10‧‧‧Substrate processing unit

11‧‧‧Loader

12‧‧‧Loading/Exporting Room LLM

13~16‧‧‧Transporting RoomTM (Transfer Module)

14‧‧‧Transport RoomTM

20‧‧‧Control device

22a‧‧‧ROM (Read Only Memory)

22b‧‧‧RAM (Random Access Memory)

24‧‧‧CPU

26‧‧‧ Busbar

28a‧‧‧External interface (external I/F)

28b‧‧‧Internal interface (internal I/F)

50‧‧‧Anode (ITO)

51‧‧‧Organic layer

52‧‧‧Cathode (metal electrode)

53‧‧‧SiNx film (tantalum nitride film)

54‧‧‧aCHx (amorphous hydrocarbon) film

54-1‧‧‧1st aCHx film

54-2‧‧‧2nd aCHx film

55‧‧‧SiNx film (tantalum nitride film)

100‧‧‧1st processing container

110‧‧‧Sliding mechanism

110a‧‧‧ platform

110b‧‧‧Support

110c‧‧‧sliding mechanism

120a~120f‧‧‧Spray mechanism

130‧‧‧ partition wall

140‧‧‧ gate valve

150a~150f‧‧‧Connected tube

200‧‧‧2nd processing container

210a~210f‧‧‧vapor deposition source

210a1~210f1‧‧‧ Storage Department

220a~220f‧‧‧ valve body

400‧‧‧Control Department

430‧‧‧Processing container

431‧‧‧mounting table

432‧‧‧electrode plate

433‧‧‧DC power supply

435‧‧‧matcher

437‧‧‧High frequency power supply

440‧‧‧ Sealing material

441‧‧‧ dielectric window

442‧‧‧radiation slot antenna

450‧‧‧Antenna body

451‧‧‧Slot plate

452‧‧‧ dielectric board

453‧‧‧Microwave Oscillator

454‧‧‧ coaxial waveguide

460‧‧‧Material gas supply structure

461‧‧‧Material gas supply pipe

462‧‧‧ openings

463‧‧‧Material gas supply port

464‧‧‧Material gas supply source

465‧‧‧ gas pipe

466‧‧‧ valve body

467‧‧‧mass flow controller

470‧‧‧1st plasma excitation gas supply port

471‧‧‧1st gas supply source for plasma excitation

472‧‧‧1st plasma gas supply tube for excitation

473‧‧‧ valve body

474‧‧‧Quality Flow Controller

480‧‧‧Visification gas supply structure

481‧‧‧2nd plasma gas supply tube for excitation

482‧‧‧Second plasma excitation gas supply port

483‧‧‧ Opening

484‧‧‧The second plasma excitation gas supply source

485‧‧‧ gas pipe

486‧‧‧ valve body

487‧‧‧Quality Flow Controller

490‧‧‧Exhaust port

491‧‧‧Exhaust device

492‧‧‧Exhaust pipe

510‧‧‧No bias conditions

520‧‧‧ Bias 1 layer condition

530‧‧‧No bias conditions

540‧‧‧Pressure 1 layer condition

550‧‧‧ Bias 2 layer conditions

G‧‧‧glass substrate

PM1, PM2‧‧‧ evaporation device

PM3, PM4, PM5‧‧‧Microwave plasma processing equipment

R1‧‧‧plasma generation area

R2‧‧‧ material gas dissociation area

Sys‧‧‧ substrate processing system

1(a) to 1(d) are views showing a manufacturing procedure of an organic electronic component according to an embodiment of the present invention.

FIG. 2 is a view schematically showing a configuration example of a substrate processing system according to an embodiment of the present invention.

Fig. 3 is a longitudinal sectional view showing a vapor deposition device of an embodiment.

Fig. 4 is a longitudinal sectional view showing an RLSA type microwave plasma processing apparatus according to an embodiment.

Fig. 5 is a plan view showing a material gas supply structure of an embodiment.

Fig. 6 is a plan view showing a gas supply structure for plasma excitation according to an embodiment.

Fig. 7 is a timing chart showing the respective conditions in the first film formation example of the aCHx film and a film formation state at each time.

Fig. 8 is a timing chart showing the respective conditions in the second film formation example of the aCHx film and a film formation state at each time.

Fig. 9 is a timing chart showing the respective conditions in the third film formation example of the aCHx film and a film formation state at each time.

Fig. 10 is a timing chart showing the respective conditions in the fourth film formation example of the aCHx film and a film formation state at each time.

Fig. 11 is a timing chart showing the respective conditions in the fifth film formation example of the aCHx film and a film formation state at each time.

Fig. 12 is a graph showing the experimental results of the film properties of the aCHx film of the third film formation example.

Fig. 13 is a graph showing experimental results of film properties in a laminated structure in which the aCHx film of the fourth and fifth film forming examples is sandwiched by a 100 nm SiNx film.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description and the drawings, the same reference numerals are given to the components having the same configurations and functions, and the description thereof will not be repeated. Further, in the present specification, 1 mTorr is (10 ^-3 × 101325/760) Pa, 1 sccm is (10 ^-6 /60) m ³ /sec, and 1 Å is 10 ^-10 m.

First, a method of manufacturing an organic electronic component according to an embodiment of the present invention will be described with reference to Fig. 1 . Fig. 1 is a view showing a manufacturing step of an organic electronic component according to an embodiment of the present invention.

(Manufacturing method of organic electronic components)

As shown in Fig. 1(a), the object to be processed is a glass substrate G in which an anode (ITO: Indium Tin Oxide) 50 of indium tin oxide is formed in advance. As shown in FIG. 1(a), the vapor deposition apparatus forms a film on the surface of the anode (ITO) 50 by vacuum evaporation through a pattern mask.

Next, the vapor deposition device forms a cathode (metal electrode) 52 on the organic layer 51. The vapor deposition device deposits a vapor atom (for example, Ag or LiF) on the organic layer 51 through a pattern mask by vacuum evaporation to form a cathode (metal electrode) 52. Hereinafter, the organic layer 51 and the cathode (metal electrode) 52 are collectively referred to as an organic EL element.

Next, as shown in FIG. 1(b), the microwave plasma processing apparatus is formed by a low-temperature process of 100 ° C or less by microwave plasma CVD (Chemical Vapor Deposition). The SiNx film 53 is an inorganic layer containing a nitrogen component and containing no nitrogen component.

Next, as shown in FIG. 1(c), the microwave plasma processing apparatus forms an aCHx (amorphous hydrocarbon) film 54 on the SiNx film 53. The aCHx film 54 is an organic layer containing a carbon component. The aCHx film 54 is formed by microwave plasma CVD. Specifically, the aCHx film 54 is a plasma generated by exciting a gas of a hydrocarbon gas such as a methane gas (CH ₄ ) or a butyne gas (C ₄ H ₆ ) by microwave power, and is 100 ° C or less. The low temperature process is formed. When the organic EL device is damaged at a high temperature of 100 ° C or higher, the aCHx film 54 is preferably formed at a low temperature of 100 ° C or lower. Further, in the present embodiment, an example in which the aCHx film 54 is formed on the SiNx film 53 has been described. However, the present invention is not limited thereto, and an organic layer containing a carbon component may be formed on the SiNx film 53. The aCHx film 54 will be described in detail later.

Next, as shown in Fig. 1(d), in the microwave plasma processing apparatus, a SiNx film (tantalum nitride film) 55 is formed on the aCHx film 54 by a microwave plasma CVD at a low temperature of 100 ° C or lower. The SiNx film 55 is an inorganic layer containing a nitrogen component and containing no nitrogen component.

In the present embodiment, an example in which the SiNx film 53 and the SiNx film 55 are formed via the aCHx film 54 on the organic EL element has been described, but the invention is not limited thereto. For example, an inorganic layer containing no carbon component such as SiON or AL ₂ O ₃ may be formed instead of the SiNx film 53 and the SiNx film 55. Further, the encapsulating film of the organic EL device is formed by including the SiNx film 53, the aCHx film 54, and the SiNx film 55.

Here, the aCHx film 54 of the present embodiment will be described in detail. As shown in FIG. 1, the aCHx film 54 has a first aCHx film 54-1 and a second aCHx film 54-2. More specifically, the first aCHx film 54-1 and the second aCHx film 54-2 are on the SiNx film 53, and are based on the first aCHx film 54-1, the second aCHx film 54-2, and the first aCHx film. The order of 54-1 and the second aCHx film 54-2 is two layers each.

The aCHx film 54-1 is formed by using a plasma generated by a microwave plasma processing apparatus to be described later. Similarly to the first aCHx film 54-1, the second aCHx film 54-2 is formed by applying a bias electric field using a high-frequency power source of the microwave plasma processing apparatus when film formation is performed using plasma. Further, after the second aCHx film 54-2 is formed by using a plasma generated by the microwave plasma processing apparatus, a bias electric field can be applied by using a high-frequency power source of the microwave plasma processing apparatus. form.

As described above, in the second aCHx film 54-2, a bias electric field is applied by the high-frequency power source during or after the formation of the aCHx film. Therefore, ions in the plasma are drawn into the second aCHx film 54-2. Due to the impact of this ion, the second aCHx film 54-2 which has been formed is cut off by a part of the C-H bond. Film formation was carried out in the state. As a result, the second aCHx film 54-2 has more unbonded hands (hanging bonds) of CH than the first aCHx film 54-1.

Since the second aCHx film 54-2 has more unbonded hands than the first aCHx film 54-1, for example, when moisture (H ₂ O) or oxygen (O ₂ ) is immersed from the outside, moisture (H ₂ O) can be obtained. The OH group or oxygen is trapped in the unbonded hands of the CH. Therefore, the encapsulating film of the organic EL device of the present embodiment can suppress the penetration of moisture or oxygen which is infiltrated from the outside into the organic EL element. As a result, the encapsulating film of the organic EL of the present embodiment can improve the encapsulating performance of the encapsulating film.

In addition, the encapsulating film of the organic EL device of the present embodiment applies a bias electric field to the aCHx film 54 which is faster than the SiNx film 53 and the SiNx film 55, thereby eliminating the need for a SiNx film. Stacking can improve package performance. Therefore, in the encapsulating film of the organic EL device of the present embodiment, the film formation yield of the encapsulating film can be suppressed from being lowered, and the encapsulating performance of the encapsulating film can be improved.

Further, in the second aCHx film 54-2, a bias electric field is applied by the high-frequency power source during or after the film formation, so that the carbon density (film density) of the second aCHx film 54-2 is higher than that of the second aCHx film 54-2. The first aCHx film 54-1 is higher. Further, in the second aCHx film 54-2, a bias electric field is applied by the high-frequency power source during or after the film formation, so that the second aCHx film 54-2 has a defect (capture) density of the aCHx film. In other words, the concentration of water captured is higher than that of the first aCHx film 54-1.

Further, in the second aCHx film 54-2, a bias electric field is applied to the non-film-forming plasma by the high-frequency power source during or after the film formation, so that the second aCHx film 54-2 has The refractive index of light becomes higher than that of the first aCHx film 54-1. Further, in the second aCHx film 54-2, a bias electric field is applied to the non-film-forming plasma by the high-frequency power source during or after the film formation, so that the second aCHx film 54-2 has The light transmittance becomes lower than that of the first aCHx film 54-1.

Further, in the present embodiment, since the aCHx film 54 contains a carbon component, the stress is smaller than that of the SiNx film 53 and the SiNx film 55. Therefore, the aCHx film 54 functions as a stress relaxation layer that moderates the stress of the SiNx film 53 and the SiNx film 55. Therefore, in the present embodiment, by the aCHx film 54 Formed to prevent excessive pressure from being applied to the organic EL element. As a result, in the present embodiment, it is possible to prevent the SiNx film 53 from being peeled off from the organic EL element or the vicinity of the interface of the organic EL element.

Further, in the present embodiment, the aCHx film 54 is exemplified as the stress relaxation layer for the following reasons. That is, since the aCHx film 54 is very dense, it has moisture permeability resistance. Further, since the aCHx film 54 contains carbon, the stress is smaller than that of the nitride film, and the stress of the SiNx film 53 and the SiNx film 55 can be alleviated. Further, the aCHx film 54 has high mechanical strength and excellent light transmittance. Since the CN film has a property of absorbing light, in the case of an organic EL device, in particular, the aCHx film 54 having a light transmittance superior to that of the CN film is applied to the stress relaxation layer, which is of great significance.

On the other hand, in the present embodiment, the SiNx film 53 and the SiNx film 55 are exemplified as the package layer for the following reasons. That is, the SiNx film 53 and the SiNx film 55 are very dense and have high encapsulation properties. For example, the SiO ₂ film allows water to permeate, whereas the SiNx film 53 and the SiNx film 55 do not allow water to permeate, so that the moisture permeability is excellent.

(substrate processing system)

Next, a substrate processing system for implementing the series of processes shown in FIG. 1 will be described with reference to FIG. 2. FIG. 2 is a view schematically showing a configuration example of a substrate processing system according to an embodiment of the present invention. As shown in FIG. 2, the substrate processing system Sys of the present embodiment includes a substrate processing apparatus 10 in which a plurality of processing apparatuses are connected in series, and a control apparatus 20 that controls the substrate processing apparatus 10.

(Substrate processing apparatus 10)

The substrate processing apparatus 10 of the present embodiment includes a loader 11 that is connected in series along the conveyance direction of the glass substrate G, a load lock chamber LLM12, a vapor deposition device PM1, and a transfer chamber TM (Transfer Module). 13. The vapor deposition apparatus PM2, the transfer chamber TM14, the microwave plasma processing apparatus PM3, the transfer chamber TM15, the microwave plasma processing apparatus PM4, the transfer chamber TM16, and the microwave plasma processing apparatus PM5.

By the loader 11, the loading/unloading chamber LLM12, the vapor deposition device PM1, the transfer chamber TM13, The vapor deposition apparatus PM2, the transfer chamber TM14, the microwave plasma processing apparatus PM3, the transfer chamber TM15, the microwave plasma processing apparatus PM4, the transfer chamber TM16, and the microwave plasma processing apparatus PM5 perform a series of processes shown in Fig. 1.

Further, the loader 11, the loading/unloading chamber LLM12, the vapor deposition device PM1, the transfer chamber TM13, the vapor deposition device PM2, the transfer chamber TM14, the microwave plasma processing device PM3, the transfer chamber TM15, the microwave plasma processing device PM4, The transfer chamber TM16 and the microwave plasma processing apparatus PM5 are not limited to being connected in series in the transport direction, and may be connected in a row (multiple chamber). For example, the loader 11, the vapor deposition device PM1, the vapor deposition device PM2, the microwave plasma processing device PM3, the microwave plasma processing device PM4, and the microwave plasma processing device PM5 may be disposed around the common transfer chamber.

Further, after the treatment of the microwave plasma processing apparatus PM3, the subsequent processing of the microwave plasma processing apparatus PM4 and the microwave plasma processing apparatus PM5 is not necessarily continuously performed via the transfer chamber TM or the common transfer chamber. After the treatment of the microwave plasma processing apparatus PM3, the glass substrate G may be temporarily stored under atmospheric pressure, and then the discontinuous treatment such as the treatment of the microwave plasma processing apparatus PM4 and the microwave plasma processing apparatus PM5 may be performed.

The loader 11 is a device that moves a glass substrate G, for example, a glass substrate G on which an anode (ITO) 50 is formed in advance into the substrate processing apparatus system Sys. The loading/unloading chamber LLM12, the transfer chamber TM13, the transfer chamber TM14, the transfer chamber TM15, and the transfer chamber TM16 are devices for transferring the glass substrate G between the respective processing devices.

The loading/unloading chamber LLM12 is a vacuum transfer chamber for transporting the glass substrate G conveyed from the loader 11 (atmosphere system) to the transfer chamber TM in a reduced pressure state while maintaining the inside in a predetermined reduced pressure state. . A transfer arm (not shown) is disposed inside the transfer chamber TM. The carrying arm is formed in a multi-joint shape that can be flexed and rotated.

Further, the size of the glass substrate G may be 730 mm × 920 mm or more. Further, the size of the glass substrate G may be, for example, a G4.5 substrate size of 730 mm × 920 mm (diameter in the chamber: 1000 mm × 1190 mm). Moreover, the size of the glass substrate G can also be 1100 mm × 1300 mm (cavity Indoor diameter: 1470mm × 1590mm) G5 substrate size or more. Further, the object to be processed for forming the element is not limited to the glass substrate G of the above-described size, and may be, for example, a tantalum wafer of 200 mm or 300 mm.

First, the glass substrate G is conveyed to the vapor deposition device PM1 via the loader 11 and the loading/unloading chamber LLM12. In the vapor deposition device PM1, six organic layers 51 are continuously formed on the surface of the ITO of the glass substrate G by vapor deposition. Next, the glass substrate G is conveyed to the vapor deposition apparatus PM2 via the conveyance chamber TM13. In the vapor deposition device PM2, a cathode (metal electrode) 52 is formed by vacuum evaporation.

Next, the glass substrate G is conveyed to the microwave plasma processing apparatus PM3 via the conveyance chamber TM14. The microwave plasma processing apparatus PM3 forms the SiNx film 53 by microwave plasma CVD.

Then, the glass substrate G is transferred to the microwave plasma processing apparatus PM4 (corresponding to the second microwave plasma processing apparatus) via the transfer chamber TM15. The microwave plasma processing apparatus PM4 forms aCHx film 54 by microwave plasma CVD. Next, the glass substrate G is transported to the microwave plasma processing apparatus PM5 via the transfer chamber TM16. The microwave plasma processing apparatus PM5 forms the SiNx film 55 by microwave plasma CVD.

(Control device 20)

The control device 20 is a computer that controls the entire substrate processing system Sys. Specifically, the control device 20 controls the conveyance of the glass substrate G in the substrate processing system Sys; and the actual process inside the substrate processing apparatus 10. The control device 20 has a ROM (Read Only Memory) 22a, a RAM (Random Access Memory) 22b, and a CPU (Central Processing Unit) 24. Further, the control device 20 has a bus bar 26, an external interface (external I/F) 28a, and an internal interface (internal I/F) 28b.

The basic program executed by the control device 20, the program activated at the time of abnormality, and the recipe for displaying the process sequence of each PM are stored in the ROM 22a. The data of the process conditions displayed in each PM or the control program for executing the process are stored in the RAM 22b. The ROM 22a and the RAM 22b are examples of a memory medium, and may be an EEPROM (Electrically Erasable Programmable). Read-Only Memory), CD, CD, etc.

The CPU 24 executes a control program in accordance with various recipes to control the process of manufacturing an organic electronic component on the glass substrate G. The bus bar 26 is a path for exchanging data between components. The internal interface 28a inputs data and outputs necessary information to a monitor or a speaker (not shown). The external interface 28b transmits and receives data to and from the substrate processing apparatus 10 via the network.

When receiving the drive signal from the control device 20, for example, the substrate processing apparatus 10 conveys the instructed glass substrate G, drives the instructed PM, controls the necessary process, and notifies the control device 20 of the control result (response signal). In this manner, the control device 20 (computer) controls the substrate processing system Sys by executing a control program stored in the ROM 22a or the RAM 22b to allow the process of the organic EL element (element) shown in Fig. 1 to be performed.

Next, the internal structure of each PM and the specific processing executed by each PM will be described in order. As for the vapor deposition apparatus PM2 which performs vacuum vapor deposition, a general apparatus can be used, and the description of the internal structure is abbreviate|omitted here.

(PM1: vapor deposition treatment of the organic layer 51)

Fig. 3 is a longitudinal sectional view showing a vapor deposition device of an embodiment. As shown in FIG. 3, the vapor deposition apparatus PM1 has the first processing container 100 and the second processing container 200, and six layers of the organic film are continuously formed into a film in the first processing container 100.

The first processing container 100 has a rectangular parallelepiped shape. The first processing container 100 has therein a slide mechanism 110 for transporting the glass substrate G, six discharge mechanisms 120a to 120f for discharging organic molecules to the glass substrate G, and seven partition walls 130 for separating the respective discharge mechanisms 120. . A gate valve 140 is provided on the side wall of the first processing container 100. The gate valve 140 is capable of maintaining airtightness in the chamber by opening and closing, and moving the glass substrate G into the removed valve body.

The sliding mechanism 110 has a platform 110a, a support 110b, and a sliding mechanism 110c. The platform 110a is supported by the support 110b, and the substrate G that is moved from the gate valve 140 is not shown. The high voltage applied by the high voltage power source is electrostatically adsorbed. The sliding mechanism 110c is attached to the ceiling portion of the first processing container 100 and grounded, and the substrate G is slid in the longitudinal direction of the first processing container 100 together with the stage 110a and the support 110b. Therefore, the glass substrate G moves in parallel in the close air space of each of the discharge mechanisms 120.

The six discharge mechanisms 120a to 120f have the same shape and structure, and are arranged in parallel with each other at equal intervals. The discharge mechanisms 120a to 120f have a hollow rectangular shape inside, and eject organic molecules from the openings provided in the center of the upper portion thereof. The lower portions of the discharge mechanisms 120a to 120f are connected to the connection pipes 150a to 150f that penetrate the bottom wall of the first processing container 100, respectively.

A partition wall 130 is provided between each of the discharge mechanisms 120. The partition wall 130 separates the respective discharge mechanisms 120 to prevent mixing of organic molecules ejected from the openings of the respective discharge mechanisms 120.

The second processing container 200 is provided with six vapor deposition sources 210a to 210f having the same shape and structure. The vapor deposition sources 210a to 210f store organic materials in the housing portions 210a1 to 210f1, respectively. The vapor deposition sources 210a to 210f have a high temperature of about 200 to 500 ° C in each of the storage portions, whereby the respective organic materials are vaporized. In addition, the so-called gasification does not mean that the liquid becomes a gas, and the phenomenon that the solid does not directly change into a gas through the liquid state (that is, sublimation) is also included.

The vapor deposition sources 210a to 210f are connected to the connection pipes 150a to 150f, respectively. Since the organic molecules vaporized by the respective vapor deposition sources 210 are kept at a high temperature, the connection pipes 150 do not adhere to the respective connection pipes 150, but pass through the respective connection pipes 150 from the openings of the respective discharge mechanisms 120 to the first processing container. The internal release of 100. Further, since the first and second processing containers 100 and 200 are maintained at a predetermined degree of vacuum, they are depressurized to a desired degree of vacuum by an exhaust mechanism (not shown). Each of the connecting pipes 150 is provided with valve bodies 220a to 220f in the atmosphere. The valve bodies 220a to 220f control the blockage and communication between the space in the vapor deposition source 210 and the internal space of the first processing container.

The glass substrate G is transferred from the gate valve 140 of the vapor deposition device PM1. Next, in accordance with the control of the control device 20, the glass substrate G is sequentially advanced from the discharge mechanism 120a toward the discharge mechanism 120f at a predetermined speed above the respective discharge ports. The organic molecules sequentially ejected from the respective ejection outlets are evaporated on the glass. Substrate G. Therefore, for example, six organic layers including a hole transport layer, an organic light-emitting layer, and an electron transport layer are sequentially formed. However, the organic layer 51 shown in Fig. 1(a) may not be 6 layers.

(PM2: vapor deposition treatment of cathode (metal electrode) 52)

Next, the glass substrate G is conveyed to the vapor deposition apparatus PM2. The vapor deposition device PM2 heats a vapor deposition source that stores a vapor deposition material (for example, Ag or LiF) for forming a cathode (metal electrode) 52 in accordance with the control of the control device 20 to vaporize the vapor deposition material. The vaporized vapor deposition material is supplied to a processing vessel maintained at a predetermined degree of vacuum. In the vapor deposition device PM2, the vapor deposition material (evaporated atoms) supplied into the processing container is vacuum-deposited on the organic layer 51 through the pattern mask to form a cathode (metal electrode) 52.

(PM3: film formation treatment of SiNx film)

Next, the glass substrate G is transported to the microwave plasma processing apparatus PM3 in accordance with the control of the control device 20. As shown in FIG. 1(b), the microwave plasma processing apparatus PM3 forms a SiNx film 53 so as to cover the organic EL element. Fig. 4 is a longitudinal sectional view showing an RLSA type microwave plasma processing apparatus according to an embodiment. Fig. 5 is a plan view showing a material gas supply structure of an embodiment. Fig. 6 is a plan view showing a gas supply structure for plasma excitation according to an embodiment. Further, the microwave plasma processing apparatus PM3 of the present embodiment is a CVD apparatus that generates a plasma using a radiation line slot antenna.

The microwave plasma processing apparatus PM3 includes a bottomed cylindrical processing vessel 430 having an open top surface. The processing vessel 430 is formed, for example, of an aluminum alloy. Further, the processing container 430 is grounded. A mounting table 431 is provided in the vicinity of the center portion of the bottom portion of the processing container 430 as a placing portion on which the glass substrate G is placed.

An electrode plate 432 is provided in the mounting table 431. The electrode plate 432 is connected to a DC power source 433 provided outside the processing container 430. The DC power source 433 generates an electrostatic force on the surface of the mounting table 431 to electrostatically adsorb the glass substrate G to the mounting table 431. Further, the mounting table 431 is connected to the high-frequency power source 437 via the matching unit 435. The high-frequency power source 437 can apply a bias electric field to the mounting table 431 by the output of the high-frequency power. Moreover, the high frequency power supply 437 can be loaded by the output of the high frequency power. A film formed on the object to be processed and the object to be processed placed on the mounting table 431 is biased.

The upper portion of the processing container 430 is opened, and a dielectric window 441 is provided through, for example, a sealing member 440 such as an O-ring for ensuring airtightness. The interior of the processing vessel 430 is closed by a dielectric window 441. A radiation slot antenna 442 is disposed above the dielectric window 441. The radiation slot antenna 442 functions as a plasma excitation unit that supplies microwaves for plasma generation. Further, the dielectric window 441 is made of, for example, alumina (Al ₂ O ₃ ). In this case, the dielectric window 441 has resistance to nitrogen trifluoride (NF ₃ ) gas for dry cleaning. The treatment container 430 may be coated with yttrium oxide (Y ₂ O ₃ ), spinel (MgAl ₂ O ₄ ), or on the surface of the alumina of the dielectric window 441 in order to further improve the resistance to the nitrogen trifluoride gas. Aluminum nitride (AlN).

The radiation slot antenna 442 includes a substantially cylindrical antenna body 450 having an open bottom surface. The opening of the bottom surface of the antenna main body 450 is provided with a disk-shaped slot plate 451 in which a plurality of slots are formed. Above the slot plate 451 in the antenna body 450, a dielectric plate 452 formed of a low loss dielectric material is provided. The top surface of the antenna body 450 is connected to a coaxial waveguide 454 that is connected to the microwave oscillating device 453. The microwave oscillating device 453 functions as a plasma generating unit that plasmas the material gas that has been transported into the processing chamber 430 to form an organic material that is formed on the glass substrate G placed on the mounting table 431, that is, the object to be processed. An organic layer is formed on the element. The microwave oscillating device 453 is disposed outside the processing container 430, and is oscillated to the radiation slot antenna 442 at a predetermined frequency, for example, 2.45 GHz microwave. Therefore, the microwave oscillated from the microwave oscillation device 453 is propagated into the radiation slot antenna 442, and is compressed by the dielectric plate 452 to have a short wavelength. Thereafter, the short-wavelength microwave generates a circularly polarized wave in the slot plate 451. The circularly polarized wave is radiated from the dielectric window 441 toward the processing container 430.

A material gas supply structure 460 having a substantially flat plate shape is provided between the mounting table 431 in the processing container 430 and the radiation slot antenna 442. The material gas supply structure 460 is formed in a circular shape in which the outer shape is at least larger than the diameter of the glass substrate G in plan view. By the material gas supply structure 460, the inside of the processing container 430 is divided into a plasma generation region R1 on the radiation slot antenna 442 side and a material gas dissociation region R2 on the mounting table 431 side. Further, as the material gas supply structure 460, for example, alumina can be used. In this case, since alumina is ceramic, It has high heat resistance or high strength compared to metal materials such as aluminum. Further, since the alumina does not trap the plasma generated in the plasma generating region R1, sufficient ion irradiation can be performed on the glass substrate G. The dense film is produced by sufficient ion irradiation of the film on the glass substrate G. Further, the material gas supply structure 460 has resistance to nitrogen trifluoride gas for dry cleaning. In the treatment container 430, in order to further improve the resistance to the nitrogen trifluoride gas, the surface of the alumina of the material gas supply structure 460 may be coated with ruthenium oxide, spinel, or aluminum nitride.

As shown in FIG. 5, the material gas supply structure 460 is formed of a continuous material gas supply pipe 461 which is arranged in a substantially lattice shape on the same plane. The material gas supply pipe 461 is formed in a square shape in a longitudinal section. A plurality of openings 462 are formed in the gap between the material gas supply pipes 461. The plasma and radical generated by the plasma generating region R1 on the upper side of the material gas supply structure 460 enter the material gas dissociation region R2 on the mounting table 431 side through the opening portion 462.

As shown in FIG. 4, a plurality of material gas supply ports 463 are formed on the bottom surface of the material gas supply pipe 461 of the material gas supply structure 460. These material gas supply ports 463 are uniformly disposed in the surface of the material gas supply structure 460. The material gas supply pipe 461 is connected to a gas pipe 465 that communicates with a material gas supply source 464 provided outside the processing container 430. In the source gas supply source 464, for example, a methane gas (SiH ₄ ) gas, a hydrogen (H ₂ ) gas, and an argon (Ar) gas are individually sealed as a material gas. The gas tube 465 is provided with a valve body 466 and a mass flow controller 467. With this configuration, the methanol gas of a predetermined flow rate, hydrogen gas, and argon (Ar) gas are introduced into the material gas supply pipe 461 from the material gas supply source 464 through the gas pipe 465, respectively. These methane gas, hydrogen gas, and argon (Ar) gas are supplied from the respective material gas supply ports 463 toward the lower material gas dissociation region R2.

The first plasma excitation gas supply port 470 is formed on the inner circumferential surface of the processing container 430 which covers the outer peripheral surface of the plasma generation region R1, and supplies the plasma excitation gas which is a raw material of the plasma. The first plasma excitation gas supply port 470 is formed, for example, at a plurality of locations along the inner circumferential surface of the processing container 430. The first plasma excitation gas supply port 470 is connected to the first plasma excitation gas supply pipe 472. The first plasma excitation gas supply pipe 472 is a pipe that penetrates the side wall portion of the processing container 430 and communicates with the first plasma excitation gas supply source 471 provided outside the processing container 430. The first plasma excitation gas supply pipe 472 is provided with a valve body 473 and a mass flow controller 474. With this configuration, the plasma excitation gas is supplied from the side to the plasma generation region R1 in the processing container 430 at a predetermined flow rate. In the first embodiment, the first plasma excitation gas supply source 471 is sealed with, for example, argon (Ar) gas as a plasma excitation gas.

On the top surface of the material gas supply structure 460, a plasma excitation gas supply structure 480 is stacked. The plasma excitation gas supply structure 480 has the same configuration as the material gas supply structure 460. The plasma excitation gas supply structure 480 having a substantially flat plate shape is formed of a second plasma excitation gas supply pipe 481 arranged in a lattice shape as shown in FIG. 6 . Further, for the plasma excitation gas supply structure 480, for example, alumina is used. In this case as well, as described above, since alumina is a ceramic, it has high heat resistance or high strength as compared with a metal material such as aluminum. Further, since the alumina does not trap the plasma generated in the plasma generating region R1, sufficient ion irradiation can be performed on the glass substrate G. By means of sufficient ion irradiation of the film on the glass substrate G, a dense film is produced. Further, the plasma excitation gas supply structure 480 has resistance to nitrogen trifluoride gas for dry cleaning. Further, in order to increase the resistance to the nitrogen trifluoride gas, the surface of the alumina of the material gas supply structure 480 may be coated with ruthenium oxide, spinel, or aluminum nitride.

As shown in FIG. 4, a plurality of second plasma excitation gas supply ports 482 are formed in the top surface of the second plasma excitation gas supply pipe 481. The plurality of second plasma excitation gas supply ports 482 are evenly arranged in the surface of the plasma excitation gas supply structure 480. Therefore, the plasma excitation gas can be supplied from the lower side to the upper side in the plasma generation region R1. Further, in the present embodiment, the plasma excitation gas is, for example, argon gas. Further, in addition to the argon gas, the raw material gas, that is, nitrogen (N ₂ ) gas, is supplied from the plasma excitation gas supply structure 480 to the plasma generation region R1.

An opening 483 is formed in a gap between the lattice-shaped second plasma excitation gas supply pipes 481. The plasma and radical generated in the plasma generation region R1 enter the lower material gas dissociation region R2 through the plasma excitation gas supply structure 480 and the material gas supply structure 460.

The second plasma excitation gas supply pipe 481 is connected to a gas pipe 485 that communicates with a second plasma excitation gas supply source 484 provided outside the processing container 430. In the second plasma excitation gas supply source 484, for example, a plasma excitation gas, that is, argon gas and a source gas, that is, nitrogen gas, are individually sealed. The gas pipe 485 is provided with a valve body 486 and a mass flow controller 487. With this configuration, nitrogen gas and argon gas of a predetermined flow rate are supplied to the plasma generation region R1 from the second plasma excitation gas supply port 482.

Further, the source gas and the plasma excitation gas correspond to the processing gas of the present embodiment. Further, the material gas supply structure 460 and the plasma excitation gas supply structure 480 correspond to the processing gas supply unit of the present embodiment.

An exhaust port 490 is provided on both sides of the mounting table 431 at the bottom of the processing container 430. The exhaust port 490 discharges the exhaust gas in the processing container 430. The exhaust port 490 is connected to an exhaust pipe 492 that communicates with an exhaust device 491 such as a turbo molecular pump. The inside of the processing container 430 can be maintained at a predetermined pressure by the exhaust of the exhaust port 490, for example, 20 Pa to 100 Pa as described later.

The microwave plasma processing apparatus PM3 is provided with a control unit 400. The control unit 400 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the film formation process of the SiNx film on the glass substrate G in the microwave plasma processing apparatus PM3. Further, the program storage unit stores a program for controlling the supply of the material gas, the supply of the plasma excitation gas, the radiation of the microwave, the operation of the drive system, and the like in the microwave plasma processing apparatus PM3. Film formation treatment. Further, the program storage unit also stores a program for controlling the application timing of the bias electric field applied by the high-frequency power source 437. In addition, the program can be stored in a computer-readable HDD (Hard Disk Drive), FD (Flexible Disk), CD (Compact Disc) and other computer-readable memory media. In addition, the program can be memorized in a memory medium that can be read by a computer such as a MO (Magneto-Optical disk) or a memory card. The program can be installed in the control unit 400 from the memory medium. The timing of supply of the material gas, supply of the plasma excitation gas, radiation of the microwave, and application of the bias electric field will be described later.

Next, a film forming method of the SiNx film performed in the microwave plasma processing apparatus PM3 configured as above will be described.

First, at the start of the microwave plasma processing apparatus PM3, the supply flow rate of the argon gas is adjusted. Specifically, the supply flow rate of the argon gas supplied from the first plasma excitation gas supply port 470 and the second plasma excitation gas supply port 482 is adjusted so that the concentration of the argon gas supplied into the plasma generation region R1 is increased. Uniform. In the supply flow rate adjustment, for example, the exhaust unit 491 is operated, and the processing chamber 430 is supplied from the respective plasma excitation gas supply ports 470 and 482 in a state in which the same air flow as in the actual film forming process is formed. Argon gas is supplied at a proper flow rate. With this supply flow rate setting, the substrate for the test was actually formed into a film, and it was checked whether or not the film formation was uniformly performed in the substrate surface. When the concentration of the argon gas in the plasma generation region R1 is uniform, the film formation in the surface of the substrate is uniform, and as a result of the inspection, when the film formation is not uniformly performed in the substrate surface, the supply flow rate of each argon gas is changed. Set, the substrate for the test was again formed into a film. In this way, the supply flow rate from each of the plasma excitation gas supply ports 470 and 482 is set so that the film formation is uniformly performed in the substrate surface, and the concentration of the argon gas in the plasma generation region R1 is uniform.

After the supply flow rate from each of the plasma excitation gas supply ports 470 and 482 is set, the film formation process of the glass substrate G in the microwave plasma processing apparatus PM3 is started. First, the glass substrate G is transferred into the processing container 430, and is adsorbed and held on the mounting table 431. At this time, the temperature of the glass substrate G is maintained at 100 ° C or lower, for example, 50 ° C to 100 ° C. Next, the exhaust gas in the processing container 430 is started by the exhaust device 491, and the pressure in the processing container 430 is reduced to a predetermined pressure, for example, 20 Pa to 100 Pa, and maintained in this state. In addition, the temperature of the glass substrate G is not limited to 100 ° C or less, and may be determined by the material of the organic electronic component or the like as long as the organic electronic component is not damaged.

Here, as a result of intensive studies by the inventors, it has been found that when the pressure in the processing container 430 is less than 20 Pa, the SiNx film may not be properly formed on the glass substrate G. Further, it has been found that when the pressure in the processing vessel 430 exceeds 100 Pa, it is possible to increase the reaction between gas molecules in the gas phase to generate fine particles. Therefore, as described above, the pressure in the processing container 430 is maintained at 20 Pa to 100 Pa.

When the inside of the plasma processing chamber 430 is depressurized, argon gas is supplied from the side first plasma excitation gas supply port 470 in the plasma generation region R1, and is supplied from the lower second plasma excitation gas supply port 482. Nitrogen and argon. At this time, the concentration of the argon gas in the plasma generation region R1 is maintained uniform in the plasma generation region R1. Further, nitrogen gas is supplied, for example, at a flow rate of 21 sccm. From the radiation slot antenna 442, toward the plasma generating region R1 directly below, microwaves of 2.5 kW to 4.5 kW of power are radiated at a frequency of, for example, 2.45 GHz. By the radiation of the microwave, argon gas is plasmatized in the plasma generation region R1 to radically (or ionize) the nitrogen gas. Further, at this time, the microwave traveling below is absorbed by the generated plasma. As a result, a high-density plasma is generated in the plasma generation region R1.

The plasma and radical generated in the plasma generation region R1 enter the lower material gas dissociation region R2 through the plasma excitation gas supply structure 480 and the material gas supply structure 460. In the material gas dissociation region R2, the methane gas and the hydrogen gas are supplied from the respective material gas supply ports 463 of the material gas supply structure 460. At this time, the methanol system is supplied at a flow rate of, for example, 18 sccm, and the hydrogen gas is supplied at a flow rate of, for example, 64 sccm. Further, the supply flow rate of the hydrogen gas is set in accordance with the film characteristics of the SiNx film as will be described later. The methane gas and the hydrogen gas are respectively dissociated from the plasma entering from above. On the other hand, the SiNx film is deposited on the glass substrate G by the radicals and the radicals of the nitrogen gas supplied from the plasma generating region R1.

Then, when the SiNx film is formed continuously, and a SiNx film having a predetermined thickness is formed on the glass substrate G, the emission of the microwave or the supply of the processing gas is stopped. Then, the glass substrate G is removed from the processing container 430, and a series of plasma film forming processes are completed.

Further, the supply of the material gas may be performed while the plasma is generated by the plasma excitation gas or before the plasma is generated.

(PM4: film formation treatment of aCHx film 54)

Next, the glass substrate G is transported to the microwave plasma processing apparatus PM4 in accordance with the control of the control device 20. The microwave plasma processing apparatus PM4 is as shown in FIG. 1(c) to cover the SiNx film 53. The aCHx film 54 is formed into a film.

The internal structure of the microwave plasma processing apparatus PM4 is the same as that of the microwave plasma processing apparatus PM3 shown in FIGS. 4 to 6, and therefore detailed description thereof will be omitted. However, in the material gas supply source 464, for example, methane (CH ₄ ) gas or butyne (C4H6) gas is enclosed as a material gas. With this configuration, methane gas or butyne gas having a predetermined flow rate is introduced from the material gas supply source 464 through the gas pipe 465 to the material gas supply pipe 461. Methane gas or butyne gas is supplied from the respective material gas supply ports 463 toward the lower material gas dissociation region R2.

Further, the microwave plasma processing apparatus PM4 controls the pressure in the processing chamber to be 6.7 Pa or less by the exhaust unit 491 in accordance with the control of the control unit 400. Further, the microwave plasma processing apparatus PM4 controls the microwave power supplied from the microwave oscillation device 453 into the processing chamber to 3.0 W/cm 2 or more in accordance with the control of the control unit 400. Further, the microwave plasma processing apparatus PM4 controls the temperature (for example, the substrate surface temperature) in the vicinity of the glass substrate G placed in the processing chamber to 100 ° C or lower in accordance with the control of the control unit 400.

In this state, the microwave plasma processing apparatus PM4 is configured such that the flow ratio of argon gas to methane gas is 1:1, and the plasma excitation gas supply ports 470, 482 from above the processing chamber are controlled in accordance with the control of the control unit 400. Argon gas (inactive gas) was supplied at 300 sccm. Further, the microwave plasma processing apparatus PM4 supplies methane gas at 300 sccm from the material gas supply structure 460 at the center of the processing chamber in accordance with the control of the control unit 400. The mixed gas is excited by microwave power to generate plasma. The aCHx (amorphous hydrocarbon) film 54 is formed at a low temperature of 100 ° C or lower using the generated plasma.

The aCHx film 54 is laminated as a stress relaxation layer. Therefore, the film thickness of the aCHx film 54 should be as thick as possible, for example, preferably 500 to 3000 nm. This is because the aCHx film 54 is made thick to a certain extent, whereby the stress generated in the SiNx films 53, 55 can be alleviated.

(PM5: film formation treatment of SiNx film 55)

Next, the glass substrate G is transported to the microwave plasma processing apparatus PM5 in accordance with the control of the control device 20. The microwave plasma processing apparatus PM5 is as shown in FIG. 1(d) to cover the aCHx film 54. The SiNx film 55 is formed into a film. The internal structure of the microwave plasma processing apparatus PM5 is the same as that of the microwave plasma processing apparatus PM3 shown in FIGS. 4 to 6, and therefore detailed description thereof will be omitted. Further, since the film formation of the SiNx film 55 is the same as that of the SiNx film 53, the detailed description thereof will be omitted.

As described above, in the present embodiment, since the aCHx film and the SiNx film are formed by using the RLSA type microwave plasma processing apparatus, the electron temperature is lower than that in the case where the film is formed by, for example, a parallel plate type plasma processing apparatus. Therefore, in the present embodiment, the dissociation of the gas can be easily controlled, and a higher quality film can be formed.

Further, as the gas supplied at the time of formation of the aCHx film 54, other hydrocarbon gases having multiple bonds may be used instead of methane gas or butyne gas. As the other hydrocarbon gas having multiple bonds, for example, a double-bonded ethylene (C ₂ H ₄ ) gas, a triple-bonded acetylene (C ₂ H ₂ ) gas, 1-pentyne, 2-pentyne, or the like can be used. a pentyne (C ₅ H ₁₀ ) gas, and a mixed gas of such a multi-bonded gas and hydrogen. It is preferred to use 2-butyne gas in the butyne gas. Further, as the gas supplied during the formation of the SiNx film, Si ₂ H ₆ gas may be used instead of the SiH ₄ gas. In addition to SiH ₄ gas or Si ₂ H ₆ gas, monomethylmethane (CH ₃ SiH ₃ : Monomethylsilane), or dimethylformane ((CH ₃ ) ₂ SiH ₂ : Dimethylsilane), trimethyl can also be used. Formane ((CH ₃ ) ₃ SiH: Trimethylsilane).

(Example of the first film formation of aCHx film)

Next, a first film formation example of the aCHx film 54 formed by the microwave plasma processing apparatus PM4 will be described. Fig. 7 is a timing chart showing the respective conditions in the first film formation example of the aCHx film and a film formation state at each time.

When the aCHx film 54 is formed, the control unit 400 of the microwave plasma processing apparatus PM4 controls the supply of the material gas, the supply of the plasma excitation gas, the radiation of the microwave, and the bias electric field in accordance with the time chart of the upper portion of FIG. Timing is applied. Specifically, the control unit 400 first starts supply of argon (Ar) gas, methane (CH ₄ ) gas, and microwave power for a certain period of time 0. The control unit 400 may supply nitrogen (N ₂ ) gas or ammonia (NH ₃ ) gas instead of argon gas. Further, the control unit 400 may supply a butyne (C ₄ H ₆ ) gas instead of the methane gas.

After the addition of argon gas, methane gas, and later microwave power, and during the period t ₁ after the lapse of a predetermined time, the supply of gas and the supply of microwave power are very stable. Further, at a time period t ₂ after a predetermined time elapses, as shown in the lower portion of FIG. 7, the first aCHx film 54-1 is laminated on the SiNx film 53. The period t ₁ to the period t _{2 may} be, for example, about 20 sec. In this case, the first aCHx film 54-1 laminated between the period t ₁ to the period t ₂ is about 100 nm or so.

Next, the control unit 400 continuously supplies argon gas, methane gas, and microwave power as shown in the upper portion of FIG. 7, and applies a bias electric field between the period t ₂ to the period t ₃ using the high-frequency power source 437 ( RF bias). The high-frequency power output from the high-frequency power source 437 can be made to have a frequency of 13.5 MHz and a power of 0.1 to 0.5 W/cm ² . Here, for example, a bias electric field of a power of 0.5 W/cm ² is applied.

As described above, when the aCHx film 54 is laminated and a bias electric field is simultaneously applied, ions in the plasma are introduced into the aCHx film 54 as shown in the lower portion of FIG. As a result, on the first aCHx film 54-1, the second aCHx film 54-2 having a larger carbon component (CH) than the first aCHx film 54-1 is formed. The period t ₂ to the period t _{3 may} be, for example, about 7 sec. In this case, the second aCHx film 54-2 laminated between the period t ₂ and the period t ₃ is about 50 nm.

Next, the control unit 400, the upper portion shown in FIG. 7, a continuous supply of argon gas, methane gas and the microwave power, and the period between t ₃ ~ t ₄ time period, stop the application of a bias electric field.

At a time period t ₄ after the lapse of a predetermined time, as shown in the lower portion of FIG. 7, the first aCHx film 54-1 is laminated on the second aCHx film 54-2. The period t ₃ to the period t _{4 may} be, for example, about 20 sec. In this case, the first time period t 1 aCHx film between _54-13 ~ t period of about _four stacked 100nm.

Next, the control unit 400 continuously supplies argon gas, methane gas, and microwave power as shown in the upper portion of FIG. 7, and applies a bias electric field between the period t ₄ to the period t ₅ using the high-frequency power source 437 ( RF bias). The high-frequency power output from the high-frequency power source 437 can be made to have a frequency of 13.5 MHz and a power of 0.1 to 0.5 W/cm ² . Here, for example, a bias electric field of a power of 0.5 W/cm ² is applied.

As described above, when the aCHx film 54 is laminated and a bias electric field is simultaneously applied, ions in the plasma are introduced into the aCHx film 54 as shown in the lower portion of FIG. As a result, on the first aCHx film 54-1, the second aCHx film 54-2 having a larger carbon component (CH) than the first aCHx film 54-1 is formed. The period t ₄ to the period t _{5 may} be, for example, about 7 sec. In this case, the second aCHx film 54-2 laminated between the period t ₄ and the period t ₅ is about 50 nm.

(Second film formation example of aCHx film)

Next, a second film formation example of the aCHx film 54 formed by the microwave plasma processing apparatus PM4 will be described. Fig. 8 is a timing chart showing the respective conditions in the second film formation example of the aCHx film and a film formation state at each time.

The first film formation example is an example in which a bias electric field is applied to the aCHx film 54 during film formation. On the other hand, the second film formation example is an example in which a bias electric field is applied after the aCHx film 54 is formed.

When the aCHx film 54 is formed, the control unit 400 of the microwave plasma processing apparatus PM4 controls the supply of the material gas, the supply of the plasma excitation gas, the radiation of the microwave, and the bias electric field in accordance with the time chart of the upper portion of FIG. Timing is applied. Specifically, the control unit 400 first starts the supply of argon (Ar) gas, methane (CH ₄ ) gas, and later microwave power for a certain period of time 0. The control unit 400 may supply nitrogen (N ₂ ) gas or ammonia (NH ₃ ) gas instead of argon gas. Further, the control unit 400 may supply a butyne (C ₄ H ₆ ) gas instead of the methane gas.

After the addition of argon gas, methane gas, and microwave power, and during the period t ₁ after the lapse of a predetermined time, the supply of gas and the supply of microwave power are very stable. Further, at a time period t ₂ after the lapse of a predetermined time, as shown in the lower portion of FIG. 8, the first aCHx film 54-1 is laminated on the SiNx film 53. The period t ₁ to the period t _{2 may} be, for example, about 40 sec. In this case, the first aCHx film 54-1 laminated between the period t ₁ to the period t ₂ is about 200 nm.

Next, the control unit 400 continues to supply argon gas and microwave power as shown in the upper portion of FIG. 8, and gradually stops the application of methane gas from the period t ₂ to the period t ₃ . Therefore, the control unit 400 stops the film formation of the aCHx film 54.

Then, the control unit 400 stops the supply of the methane gas between the period t ₃ to the period t ₄ and applies the bias electric field (RF bias) using the high-frequency power source 437. The high-frequency power output from the high-frequency power source 437 can be made to have a frequency of 13.5 MHz and a power of 0.1 to 0.5 W/cm ² . Here, for example, a bias electric field of a power of 0.5 W/cm ² is applied.

As described above, when the aCHx film 54 (the first aCHx film 54-1) is laminated and a bias electric field is applied, ions in the plasma are introduced into the aCHx film 54 as shown in the lower portion of FIG. As a result, on the first aCHx film 54-1, the second aCHx film 54-2 having a larger carbon component (CH) than the first aCHx film 54-1 is formed. The period t ₃ to the period t _{4 may} be, for example, about 10 sec. In this case, the second aCHx film 54-2 laminated between the period t ₃ and the period t ₄ is about 10 nm.

(Example of the third film formation of the aCHx film)

Next, a third film formation example of the aCHx film 54 formed by the microwave plasma processing apparatus PM4 will be described. Fig. 9 is a timing chart showing the respective conditions in the third film formation example of the aCHx film and a film formation state at each time.

The first film formation example is an example in which a bias electric field is applied to the aCHx film 54 in the film formation. On the other hand, in the third film formation method, a bias electric field is applied to the aCHx film 54 in the film formation. An example. In the third film formation example, the number of times the bias electric field is applied and the length of the applied bias electric field are different from those of the first film formation example. Therefore, the description overlapping with the first film formation example will be omitted.

As shown in FIG. 9, at the time period t ₂ , the first aCHx film 54-1 is laminated on the SiNx film 53. The period t ₁ to the period t _{2 may} be, for example, about 20 sec.

Next, the control unit 400 continues to supply argon gas, methane gas, and later microwave power as shown in the upper portion of FIG. 9, and applies a bias voltage between the period t ₂ to the period t ₃ using the high-frequency power source 437. Electric field (RF bias). The high-frequency power output from the high-frequency power source 437 can be made to have a frequency of 13.5 MHz and a power of 0.1 to 0.5 W/cm ² . Here, for example, a bias electric field of a power of 0.5 W/cm ² is applied.

As described above, when the aCHx film 54 is laminated and a bias electric field is simultaneously applied, ions in the plasma are introduced into the aCHx film 54 as shown in the lower portion of FIG. As a result, on the first aCHx film 54-1, the second aCHx film 54-2 having a larger carbon component (CH) than the first aCHx film 54-1 is formed. The period t ₂ to the period t _{3 may} be, for example, about 100 sec. In this case, the aCHx film 54-2 laminated between the period t ₁ to the period t ₃ is about 500 nm.

(4th film formation example of aCHx film)

Next, a fourth film formation example of the aCHx film 54 formed by the microwave plasma processing apparatus PM4 will be described. Fig. 10 is a timing chart showing the respective conditions in the fourth film formation example of the aCHx film and a film formation state at each time.

In the first film formation example, the control unit 400 controls the aCHx film 54 to perform {biasing electric field OFF→bias electric field ON→bias electric field OFF→bias electric field ON} during film formation. On the other hand, in the fourth film formation example, the control unit 400 performs an example of control of {bias electric field OFF→bias electric field ON→bias electric field OFF}. In the fourth film formation example, compared with the first film formation example, only the control state of ON/OFF of the bias electric field and the length of the applied bias electric field are different. Therefore, the description overlapping with the first film formation example will be omitted.

As shown in FIG. 10, at the time period t ₂ , the first aCHx film 54-1 is laminated on the SiNx film 53. The period t ₁ to the period t _{2 may} be, for example, about 20 sec.

Next, the control unit 400 continues to supply argon gas, methane gas, and later microwave power as shown in the upper portion of FIG. 10, and applies a bias voltage between the period t ₂ to the period t ₃ using the high-frequency power source 437. Electric field (RF bias). The high-frequency power output from the high-frequency power source 437 can be made to have a frequency of 13.5 MHz and a power of 0.1 to 0.5 W/cm ² . Here, for example, a bias electric field of a power of 0.5 W/cm ² is applied.

As described above, when the aCHx film 54 is laminated and a bias electric field is simultaneously applied, ions in the plasma are introduced into the aCHx film 54 as shown in the lower portion of FIG. As a result, on the first aCHx film 54-1, the second aCHx film 54-2 having a larger carbon component (CH) than the first aCHx film 54-1 is formed. The period t ₂ to the period t _{3 may} be, for example, about 10 sec.

Next, the control unit 400, as shown in Figure 10 upper, continuously supplied with argon gas, methane gas and the microwave power, and the period between t ₃ ~ t ₄ time period, stop the application of a bias electric field.

At a time period t ₄ after the lapse of a predetermined time, as shown in the lower portion of FIG. 10, the first aCHx film 54-1 is laminated on the second aCHx film 54-2. The period t ₃ to the period t _{4 may} be, for example, about 90 sec.

(Example of the fifth film formation of the aCHx film)

Next, a fifth film formation example of the aCHx film 54 formed by the microwave plasma processing apparatus PM4 will be described. Fig. 11 is a timing chart showing the respective conditions in the fifth film formation example of the aCHx film and a film formation state at each time.

In the fifth film formation example, the length of the applied bias electric field is different from that of the first film formation example. Therefore, the description overlapping with the first film formation example will be omitted.

As shown in FIG. 11, at the time period t ₂ , the first aCHx film 54-1 is laminated on the SiNx film 53. The period t ₁ to the period t _{2 may} be, for example, about 20 sec.

Next, the control unit 400 continues to supply argon gas, methane gas, and later microwave power as shown in the upper portion of FIG. 11, and applies a bias voltage between the period t ₂ to the period t ₃ using the high-frequency power source 437. Electric field (RF bias). The high-frequency power output from the high-frequency power source 437 can be made to have a frequency of 13.5 MHz and a power of 0.1 to 0.5 W/cm ² . Here, for example, a bias electric field of a power of 0.5 W/cm ² is applied.

As described above, when the aCHx film 54 is laminated and a bias electric field is simultaneously applied, ions in the plasma are introduced into the aCHx film 54 as shown in the lower portion of FIG. As a result, on the first aCHx film 54-1, the second aCHx film 54-2 having a larger carbon component (CH) than the first aCHx film 54-1 is formed. The period t ₂ to the period t _{3 may} be, for example, about 10 sec.

Next, the control unit 400, as shown in Figure 11 upper, continuously supplied with argon gas, methane gas and the microwave power, and the period between t ₃ ~ t ₄ time period, stop the application of a bias electric field.

At a time period t ₄ after the lapse of a predetermined time, as shown in the lower part of Fig. 11, the first aCHx film 54-1 is laminated on the second aCHx film 54-2. The period t ₃ to the period t _{4 may} be, for example, about 80 sec.

Next, the control unit 400 continuously supplies argon gas, methane gas, and microwave power, and applies a bias electric field (RF bias) using the high-frequency power source 437 between the period t ₄ and the period t ₅ . The high-frequency power output from the high-frequency power source 437 can be made to have a frequency of 13.5 MHz and a power of 0.1 to 0.5 W/cm ² . Here, for example, a bias electric field of a power of 0.5 W/cm ² is applied.

As described above, when the aCHx film 54 is laminated and a bias electric field is simultaneously applied, ions in the plasma are introduced into the aCHx film 54 as shown in the lower portion of FIG. As a result, on the first aCHx film 54-1, the second aCHx film 54-2 having a larger carbon component (CH) than the first aCHx film 54-1 is formed. The period t ₄ to the period t _{5 may} be, for example, about 10 sec.

As described above, for example, in the film formation examples 1 to 5, according to the embodiment in which the aCHx film is formed, the bias voltage electric field is intermittently applied to the aCHx film 54 by using the high-frequency power source 437 during or after the film formation. The second aCHx film 54-2 can be formed in the aCHx film 54. In the second aCHx film 54-2 (capture point), since there are relatively many unbonded hands of CH, when, for example, moisture (H ₂ O) or oxygen (O ₂ ) is immersed from the outside, OH in moisture can be obtained. The base or oxygen is captured by the unbounded hands of CH. Therefore, according to the present embodiment, it is possible to prevent the penetration of moisture or oxygen which is immersed from the outside into the organic EL element, and to improve the packaging performance of the package film.

In addition, in the present embodiment, a bias electric field is applied to the aCHx film 54 having a higher deposition rate than the SiNx film 53 and the SiNx film 55, so that the SiNx film is not required to be laminated, and the encapsulating film can be formed. The package performance is improved. Therefore, according to the present embodiment, it is possible to avoid a decrease in the yield of the package film and to improve the package performance of the package film.

Further, in the present embodiment, the bias voltage is intermittently applied to the aCHx film 54 during or after the film formation, and the first aCHx film 54-1 and the second aCHx film 54 can be controlled by such simple control. -2 Interactively stacking a plurality of layers (for example, 2 layers each). For example, in the aCHx film 54, a plurality of layers of the second aCHx film 54-2 are formed, whereby water (H ₂ O) or oxygen (O ₂ ) can be more captured by the unbonded hands of CH. Therefore, according to the present embodiment, under a simple control, the yield of the package film can be prevented from being lowered, and the package performance of the package film can be improved.

Further, in the present embodiment, the aCHx film 54, the first aCHx film 54-1 and the second aCHx film 54-2 are continuously formed in the same processing container (microwave plasma processing apparatus PM4), and are laminated alternately. Multiple layers. Therefore, the yield of the package film can be prevented from being lowered, and the package performance of the package film can be improved.

Further, in the present embodiment, for example, the first aCHx film 54-1 has a film thickness of 100 to 500 nm, and the second aCHx film 54-2 has a film thickness of 5 to 50 nm. Thereby, the film thickness of the aCHx film 54 can be made about 500 nm. Assuming that the SiNx film 53 and the SiNx film 55 each have a film thickness of about 100 nm, the film thickness of the entire package film can be made to have an appropriate thickness of 700 nm.

Further, in the present embodiment, the first aCHx film 54-1 is formed on the lowermost layer of the aCHx film 54. In other words, in the present embodiment, the intermittent control of the ON/OFF of the bias electric field during the formation of the aCHx film 54 is performed first from the OFF of the bias electric field. Therefore, in the present embodiment, the film that is in contact with the SiNx film 53 can be used as the first aCHx film 54-1 to which no bias electric field is applied. As described above, in the present embodiment, the ON/OFF intermittent control of the bias electric field is performed from the OFF first. Therefore, it is possible to prevent the SiNx film 53 from being damaged due to ion introduction into the SiNx film 53.

Further, in the present embodiment, the control unit 400 controls the power of the high-frequency power applied from the high-frequency power source 437 to the aCHx film 54 to 0.1 to 0.5 W/cm ² . This is because of the following reasons. In other words, if the power of the high-frequency power applied to the aCHx film 54 (the second aCHx film 54-2) is too large, the refractive index of the second aCHx film 54-2 becomes large, and as a result, the light transmittance may be high. Will deteriorate. On the other hand, if the power of the high-frequency power applied to the aCHx film 54 (the second aCHx film 54-2) is too small, the unbonded hand of the CH is hardly formed, so that the trapping performance of moisture or the like may be caused. influences. On the other hand, in the present embodiment, the control unit 400 controls the power of the high-frequency power applied from the high-frequency power source 437 to the aCHx film 54 to 0.1 to 0.5 W/cm ² , thereby improving the capturing performance of moisture and the like. And to avoid deterioration of the transmission of light.

(First embodiment of experimental results of film properties)

Next, an experimental result of the film characteristics of the aCHx film under application of a bias electric field will be described. Fig. 12 is a graph showing the experimental results of the film properties of the aCHx film of the third film formation example. Fig. 12 is a comparative example in which a bias electric field is not applied to the aCHx film 54 (No bias), and a bias electric field is applied in a time chart of the third film formation example to form a first layer of the second aCHx film 54- In the case of 2 (bias 1 layer), the experimental results of the film properties of both.

As shown in FIG. 12, in the No bias condition 510, the aCHx film 54 is deposited for 100 (sec) in a state where no bias electric field is applied. The process conditions at this time were microwave (MW) power of 4000 (W), argon gas flow rate of 300 (sccm), methane gas flow rate of 300 (sccm), and treatment temperature of 30 (° C.). That is, the flow ratio of argon gas to methane gas is 1:1. Further, the process conditions are a system pressure of 2.66 (Pa), an ESC (Electric Static Chuck) of 3000 (V), an RF (power of a bias electric field ON) of 0 (W), and an RF Time of 0 (sec), a substrate. The back pressure enthalpy (BP He) for cooling was 0.67 (kPa).

In this case, the average film thickness (ave) of the aCHx film was 503.3 (nm), and the film thickness uniformity (unif) of the aCHx film was 0.069. Further, the deposition rate (D/R) of the aCHx film was 302.0 (nm/min). Further, the average (ave) refractive index (RI) in the 633 nm thick aCHx film was 1.608, and the refractive index uniformity (unif) in the 633 nm thick aCHx film was 0.016. Further, the average (ave) light absorption coefficient (k) in the aCHx film having a thickness of 530 nm was 0.001, and the uniformity (unif) of the light absorption coefficient in the aCHx film having a thickness of 530 nm was 3.704. Further, the light absorption coefficient (k) of the average (ave) in the aCHx film having a thickness of 100 nm was 0.00026. Further, the film density of the aCHx film was 0.94 (g/cm ³ ). Further, the defect (capture) density (spin/mm ³ ) of the aCHx film, that is, the concentration of water collected is below the measurement limit value.

On the other hand, in the bias layer 1 condition 520, the aCHx film 54 is deposited for 20 (sec) in a state where no bias electric field is applied, and then the aCHx film 54 is deposited 100 in a state where a bias electric field is applied. (sec). The process conditions at this time were microwave (MW) power of 4000 (W), argon gas flow rate of 300 (sccm), methane gas flow rate of 300 (sccm), and treatment temperature of 30 (° C.). Also, the process conditions are system pressure 2.66 (Pa), ESC (Electric Static Chuck) 3000 (V), RF (bias electric field) The power of ON is 200 (W), the RF Time is 100 (sec), and the back surface pressure (BP He) for substrate cooling is 0.67 (kPa).

In this case, the average (ave) film thickness of the aCHx film was 484.7 (nm), and the film thickness uniformity (unif) of the aCHx film was 0.458. Further, the deposition rate (D/R) of the aCHx film was 242.3 (nm/min). Further, the average (ave) refractive index (RI) in the 633 nm thick aCHx film was 1.718, and the refractive index uniformity (unif) in the 633 nm thick aCHx film was 0.239. Further, the average (ave) light absorption coefficient (k) in the aCHx film having a thickness of 530 nm was 0.268, and the uniformity (unif) of the light absorption coefficient in the aCHx film having a thickness of 530 nm was 2.385. Further, the light absorption coefficient (k) of the average (ave) in the aCHx film having a thickness of 100 nm was 0.05519. Further, the film density of the aCHx film was 1.38 (g/cm ³ ). Further, the defect (capture) density (spin/mm ³ ) of the aCHx film, that is, the concentration of water collected was 1.00E18.

As shown in the experimental results of FIG. 12, when a bias electric field is applied, the refractive index of the aCHx film rises and the absorption coefficient increases (the light transmittance becomes low). In particular, although it depends on the condition of applying a bias electric field, the absorption coefficient is increased by several times by several times. The lower the absorption coefficient, the more light is transmitted, so the application of the bias electric field is preferably performed in a short time or low bias power. Further, when a bias electric field is applied, the film density of the aCHx film increases, and the defect (capture) density, that is, the concentration of water collected also increases. Thereby, a bias electric field is applied to the aCHx film, whereby the moisture or oxygen barrier property of the aCHx film can be improved.

(Second embodiment of experimental results of film properties)

Next, the experimental results of the film characteristics of the aCHx film under the application of a bias electric field will be described. Fig. 13 is a graph showing experimental results of film properties in a laminated structure in which the aCHx film of the fourth and fifth film forming examples is sandwiched by a 100 nm SiNx film. Fig. 13 shows a case where a bias electric field is not applied to the aCHx film 54 (No bias), and a case where the second aCHx film 54-2 is formed in the time chart of the third and fourth film forming examples (bias) 1 layer, biased 2 layers), experimental results of its membrane properties.

As shown in FIG. 13, in the No bias condition 530, the aCHx film 54 is deposited 100 (sec) in a state where a bias electric field is not applied. The process conditions at this time were microwave (MW) power of 4000 (W), argon gas flow rate of 300 (sccm), methane gas flow rate of 300 (sccm), and treatment temperature of 30 (° C.). and also That is, the flow ratio of argon gas to methane gas is 1:1. Further, the process conditions are a system pressure of 2.66 (Pa), an ESC (Electric Static Chuck) of 3000 (V), an RF (power of a bias electric field ON) of 0 (W), and an RF Time of 0 (sec), a substrate. The back pressure enthalpy (BP He) for cooling was 0.67 (kPa).

Further, in the No bias condition 530, the moisture permeation amount was 30 (mg/m ² /day). In addition, the amount of moisture permeation was measured by forming a film of aChx film into a permeable resin film (PEN) (having a film thickness of 200 nm), and calculating the area of the reaction between the moisture permeated by the humidified water vapor and the Ca. Out. The unit converts the weight of the infiltrated water into a unit area (m ² ) and a unit time (day).

On the other hand, in the bias 1 layer condition 540, the aCHx film 54 is deposited for 20 (sec) in a state where no bias electric field is applied, and then the aCHx film 54 is deposited 10 in a state where a bias electric field is applied. (sec). While the 1-layer condition 540 is biased, the aCHx film 54 is then deposited 90 (sec) without applying a bias electric field. The process conditions at this time were microwave (MW) power of 4000 (W), argon gas flow rate of 300 (sccm), methane gas flow rate of 300 (sccm), and treatment temperature of 30 (° C.). That is, the flow ratio of argon gas to methane gas is 1:1. Further, the process conditions are a system pressure of 2.66 (Pa), an ESC (Electric Static Chuck) of 3000 (V), an RF (power of a bias electric field ON) of 200 (W), and an RF Time of 10 (sec), a substrate. The back pressure enthalpy (BP He) for cooling was 0.67 (kPa).

In the bias 1 layer condition 540, the moisture permeation amount was 10 (mg/m ² /day).

On the other hand, in the bias two-layer condition 550, the aCHx film 54 is deposited for 20 (sec) in a state where no bias electric field is applied, and then the aCHx film 54 is deposited in a state where a bias electric field is applied. 10 (sec). In the bias 2 layer condition 550, the aCHx film 54 is then deposited for 80 (sec) without applying a bias electric field, and then the aCHx film 54 is deposited 10 (sec) even under the application of a bias electric field. ). The process conditions at this time were microwave (MW) power of 4000 (W), argon gas flow rate of 300 (sccm), methane gas flow rate of 300 (sccm), and treatment temperature of 30 (° C.). That is, the flow ratio of argon gas to methane gas is 1:1. Further, the process conditions are a system pressure of 2.66 (Pa), an ESC (Electric Static Chuck) of 3000 (V), an RF (power of a bias electric field ON) of 200 (W), and an RF Time of 20 (sec: 2 times). In total, the substrate back pressure (BP He) for substrate cooling was 0.67 (kPa).

In the bias two-layer condition 550, the moisture permeation amount was 0.72 (mg/m ² /day).

As shown in the experimental results of FIG. 13, the case where the second aCHx film 54-2 was formed in one layer (10 (mg/m) was compared with the case where no bias electric field was applied (30 (mg/m ² /day)). ² /day)), the water penetration is less, and the water is less permeable. Further, in the case where the second aCHx film 54-2 is formed in one layer (10 (mg/m ² /day)), the second aCHx film 54-2 is formed in two layers (0.72 (mg/m ² /day) )), the amount of water permeation is small, and water is less permeable. Therefore, by applying a bias electric field to the aCHx film 54 and increasing the number of layers of the bias layer, the package performance of the package film can be improved.

Although an embodiment of the present invention has been described above with reference to the drawings, the present invention is not limited to the embodiment, and it is needless to say. As long as it is a person having ordinary knowledge in the technical field, it is to be understood that the present invention is also within the technical scope of the present invention within the scope of the patent application.

For example, the encapsulating film of the present embodiment is not limited to the encapsulating film of the organic EL element. For example, the encapsulating film of the present embodiment can also be used to encapsulate an organometallic element formed by MOCVD (Metal Organic Chemical Vapor Deposition). In the MOCVD, the film-forming material mainly uses a liquid organic metal, and the vaporized film-forming material is decomposed on the object to be treated heated to 500 to 700 ° C, thereby depositing the film on the organic metal gas phase on the object to be processed. Deposition method. Further, the package film of the present embodiment can also be used for organic elements such as an organic transistor, an organic FET (Field Effect Transistor), an organic solar cell, or a thin film transistor (TFT) used in a driving system of a liquid crystal display. The electronic components are packaged.

Further, in the present embodiment, the RLSA type microwave plasma processing apparatus has been described. However, the present invention is not limited thereto, and other plasma CVD apparatuses may be applied. For example, it can also be used in an ICP (Inductively Coupled Plasma) device. In the ICP device, the plurality of dielectric plates are formed in a tile shape on the ceiling surface of the processing container, and the power of the high-frequency electromagnetic field transmitted through the dielectric plates is transmitted through the coils provided on the respective dielectric plates in the processing chamber. A device that plasmas a gas to plasma treat the object to be treated.

50‧‧‧Anode (ITO)

51‧‧‧Organic layer

52‧‧‧Cathode (metal electrode)

53‧‧‧SiNx film (tantalum nitride film)

54‧‧‧aCHx (amorphous hydrocarbon) film

54-1‧‧‧1st aCHx film

54-2‧‧‧2nd aCHx film

55‧‧‧SiNx film (tantalum nitride film)

G‧‧‧glass substrate

Claims (11)

An organic electronic component comprising: an organic component formed on a substrate to be processed; and an encapsulation film covering the organic component; the encapsulation film having an organic layer containing a carbon component and an inorganic layer not containing a carbon component The organic layer has a first organic layer and a second organic layer having more carbon components than the first organic layer. The organic electronic component of claim 1, wherein the second organic layer has a higher film density than the first organic layer. An organic electronic component according to claim 1 or 2, wherein the organic layer is formed by laminating a plurality of layers of the first organic layer and the second organic layer. The organic electronic component according to claim 1 or 2, wherein the organic layer is formed by continuously forming a film in the same processing container as the first organic layer and the second organic layer, and stacking a plurality of layers alternately. . The organic electronic component of claim 1, wherein the organic layer is formed by laminating two layers alternately between the first organic layer and the second organic layer, and the first organic layer has at least less than the second The film thickness of the organic layer. The organic electronic component of claim 1, wherein the first organic layer is formed on a lowermost layer of the organic layer. A method for producing an organic electronic component, characterized in that an organic component is formed on a target object, and an organic layer containing a carbon component and an inorganic layer containing no carbon component are laminated on the organic component, thereby The encapsulation film is formed into a film, and a bias electric field is applied by a high frequency power source for a portion of the organic layer. The method of manufacturing an organic electronic component according to claim 7, wherein the bias voltage is applied to a portion of the organic layer by intermittently controlling ON/OFF of the high frequency power supply during film formation of the organic layer In the field, or after the organic layer is formed into a film, the high frequency power source is subjected to ON control in a non-film forming plasma, whereby the bias electric field is applied to a portion of the organic layer. The scope of patented method for manufacturing an organic electronic components of 7 or 8, wherein for a portion of the organic layer, is applied to 0.1W / cm ² ~ 0.5W / cm ² of a bias electric field. The method of producing an organic electronic component according to claim 7, wherein the organic layer is an amorphous hydrocarbon. A plasma processing apparatus comprising: a processing container; a mounting portion provided in the processing container to mount a target object; a raw material gas supply source, and a raw material gas for supplying a carbon-containing component to the processing container a plasma generating unit that plasma-sinters the material gas conveyed into the processing container, and forms an organic layer on the organic component formed on the object to be processed placed on the mounting portion; the high-frequency power source a bias electric field is applied to the mounting portion; and a control unit controls ON/OFF of the high frequency power supply during film formation or film formation of the organic layer to apply the bias electric field to a portion of the organic layer .