200840113 九、發明說明 【發明所屬之技術領域】 本發明係關於在被清潔的被處理體形成有機膜之基板 處理裝置，及使用基板處理裝置之被處理體的潔淨方法。 【先前技術】 近年來，使用電激發光（EL:Electroluminescence)之 有機EL元件受到囑目。有機EL元件係具有：自我發光 、反應速度快、低消耗電力等特徵。此有機EL元件的最 基本構造，係於玻璃基板上重疊形成：陽極層、電洞輸送 層、發光層、電子輸送層、陰極層之三明治構造，層積於 玻璃基板上之陽極層，一般係使用由ITO( Indium Tin Oxide :銦錫氧化物）所形成的透明電極。有機EL元件係 於ITO上藉由蒸鍍來依序形成電洞輸送層、發光層、電子 輸送層及陰極層所製造。 作爲用以製造此種構造的有機EL元件之製造裝置的 一例，有第11圖所示之群集型的基板處理裝置被提出（ 例如參照非專利文獻1。）。基板處理裝置係由：裝載閉 鎖室 LLM ( Load Lock Module )、前處理室 CM ( Cleaning Module) 、3 個處理容器 PM (Process Module)[Technical Field] The present invention relates to a substrate processing apparatus for forming an organic film on a target object to be cleaned, and a method of cleaning the object to be processed using the substrate processing apparatus. [Prior Art] In recent years, organic EL elements using electroluminescence (EL: Electroluminescence) have attracted attention. The organic EL element has characteristics such as self-luminescence, fast reaction speed, and low power consumption. The most basic structure of the organic EL element is formed by superposing an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode layer on the glass substrate, and an anode layer laminated on the glass substrate, generally A transparent electrode formed of ITO (Indium Tin Oxide) was used. The organic EL device was produced by sequentially forming a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode layer on the ITO by vapor deposition. As an example of a manufacturing apparatus for manufacturing an organic EL element having such a structure, a cluster type substrate processing apparatus shown in Fig. 11 has been proposed (see, for example, Non-Patent Document 1). The substrate processing apparatus consists of a load lock chamber LLM (Load Lock Module), a pre-processing chamber CM (Cleaning Module), and three processing chambers PM (Process Module).
1〜PM3及搬運室TM ( Transfer Module )所構成。於此基 板處理裝置中，基板G係使用配設於搬運室TM之搬運手 臂Arm而介由搬運室TM從裝載閉鎖室LLM被搬運至前 處理室CM。前處理室CM係將附著在玻璃基板上的ITO 200840113 (陽極層）的表面之污染物予以去除。 如此清潔ITO表面後，基板G係使用搬運手臂Arm 而介由搬運室TM被真空搬運至處理容器PM1。如第12 圖所示般，於處理容器p M 1中，藉由打開閘門閥1 2 0 0， 基板G被搬入。藉由來自作用爲磁鐵的工作台1205a之磁 力，由金屬所形成的遮罩1 205b被吸引，被搬入的基板G 被夾持於工作台1 205a與1 205b之間。之後，藉由使滑動 構件1 20 5滑動，使基板G移動至蒸鍍源1210的正上方， 使收容於蒸鍍源1210的收容部1210a之所期望的有機材 料氣化，藉由使已氣化的有機分子蒸鍍於基板G的表面， 而成爲於ITO表面形成電洞輸送層（有機膜（1 ))。於 處理容器PM2及處理容器PM3中也相同，藉由各蒸鍍源 使所期望的有機材料氣化，於基板G層積發光層（有機膜 (2 ))及電子輸送層（有機膜（3 ))。如此，於群集型 的基板處理裝置中，可以有效率地製造有機EL元件。 (非專利文獻1 )日立造船株式會社“有機EL蒸鍍裝 置<11&0>”、[ online ] 、〔2006年12月9日檢索〕、網際網 路 http://www.hitachizosen.co.jp/formset/set —pr2.html 【發明內容】 發明所欲解決的課題 但是，即使特意於前處理室CM來清潔ITO表面，但 是如弟1 1圖所不般，於將基板G從前處理室C Μ搬入處 理容器ΡΜ1時，存在於搬運室ΤΜ等之污染物會附著於 200840113 IΤ Ο表面。此結果係如第12圖所示般，藉由處理容器 ΜΡ1於基板G上的ΙΤΟ表面形成電洞輸送層時，基於污 染物’ ΙΤΟ與電洞輸送層的密接性變差。能量界面控制性 變差，基於此，能量障壁變高。此結果使得功函數變小， 電洞注入性能降低，存在有有機EL元件的發光強度（亮 度）降低的問題。 對於此問題，例如也可以考慮：於處理容器PM 1清 潔IΤ 0表面後，於同一室內即刻實行蒸鍍處理之方法。但 是，如於同一室內連續地實行蒸鍍處理與潔淨處理時，則 會產生收容於蒸鍍源1 2 1 0的收容部1 2 1 0 a之有機材料會 與潔淨氣體化學反應而劣化之問題。具體而言，例如作爲 潔淨氣體，於使用〇2氣體之情形時，有機材料與02氣體 化學反應而氧化。另外例如，作爲潔淨氣體，於使用在 〇2氣體混合CF4氣體之混合氣體的情形時，有機材料與 CF4氣體化學反應而氧化及氟化。使如此已劣化的有機材 料氣化，即使形成有機層，對於各有機層所被要求的特性 之實際的特性變差，無法製造發光強度（亮度）高的良質 的有機EL元件。另一方面，對此如想要使發光強度提高 時，必須使施加電壓變大，會產生消耗電力變高的問題。 爲了解決BU述問題，在本發明中’爲提供：不使有機 材料劣化，能良好地保持ITO表面的能量界面控制性、新 且經過改良的基板處理裝置及使用該基板處理裝置的潔淨 方法。 200840113 解決課題之手段 即爲了解決前述課題，如依據本發明之 供一種基板處理裝置，其特徵爲具備：處理 有機材料，藉由所被收容之有機材料，於前 在被處理體形成有機膜之蒸鍍裝置；及於與 相同的處理容器內，清潔被處理體之潔淨裝 關來將清潔前述被處理體之空間與收容前述 間予以遮斷或連通之遮斷機構。 如依據此，於被處理體形成有機膜的蒸 被處理體的潔淨裝置，爲設置於同一處理容 於清潔被處理體後，緊接著，於同一空間內 形成有機膜。此結果，不會於被處理體的表 著污染物，能於幾乎不存在污染物的被處理 有機膜。 除此之外，於基板處理裝置設置有：藉 潔前述被處理體的空間與收容前述有機材料 斷或連通的遮斷機構。藉此，可以一面避免 置的有機材料在潔淨中與潔淨氣體化學反應 在幾乎不存在污染物而光滑的被處理體的表 〇 如此，藉由於光滑的被處理體的表面上 能提高被處理體與有機膜的密接性，且可以 量界面控制性。此結果，能使移動在被處理 間的電洞（或電子）的能量障壁降低。 某型態，爲提 容器；及收容 述處理容器內 前述處理容器 置；及藉由開 有機材料之空 鍍裝置與清潔 器內。藉此， 能於被處理體 面附著或再附 體的表面形成 由開關能將清 的空間予以遮 收容於蒸鍍裝 而劣化，一面 面形成有機膜 形成有機膜， 良好地保持能 體與有機膜之 200840113 特別是，於被處理體基板G上的陽極層（例如ITO ) 表面形成電洞輸送層之情形時’基於污染物，ITO與電涧 輸送層的密接性一變差時，基於能量界面控制性變差’能 量障壁變高。此結果，功函數變小’電洞注入性能降低， 有機EL元件的發光強度（亮度）會降低。 但是，如依據此種構成，如前述般，電洞輸送層係密 接形成於ITO表面，可以良好地保持能量界面控制性。藉 此，功函數變大，藉由使電洞注入性能提升，能維持高的 有機EL元件的發光強度。此結果，可以製造一面壓低消 耗電力一面獲得高的發光強度之有機EL元件。 進而’如依據此種構成，於使用潔淨裝置來清潔被處 理體的表面時，也可以清潔處理容器的內壁或安裝於處理 容器的各零件。此結果，能使基板處理裝置的維護週期變 長。 前述蒸鍍裝置，係包含：具有收容部，且使收容於前 述收容部的有機材料氣化之蒸鍍源；及連接於前述蒸鍍源 之連接管；及具有開口，且將從前述蒸鍍源介由前述連接 管所運送的有機材料從開口予以吹出之吹出機構，前述吹 出機構也可以與前述潔淨裝置一起被內藏於前述處理容器 〇 此時’前述遮斷機構，係可以是設置於前述連接管， 且係•曰由開關從清潔前述被處理體之空間，將收容有前述 有機材料的空間予以遮斷或連通之閥門。 " 如依據此，藉由關閉閥門，可以一面將有機材料從潔 200840113 淨氣體予以遮斷，一面來清潔被處理體，並且藉由打開閥 門，從吹出機構所被吹出的有機氣化分子，於與最終已清 潔被處理體之處理谷描1相同的處理容器內，於最終潔淨後 之被處理體的表面形成有機膜。如此藉由在非常潔淨之狀 態下，於被處理體的表面形成有機膜，能使被處理體的表 面與有機膜的密接性提高，可以提高能量界面控制性。另 外，所謂氣化，不單是液體變成氣體之現象，也包含固體 不經過液體的狀態而直接變成氣體的現象（即昇華）。 前述蒸鍍裝置，係包含：具有收容部與開口，且使收 容於前述收容部之有機材料氣化，並將已氣化的有機材料 從開口予以吹出之蒸鍍源；前述蒸鍍源可以與前述潔淨裝 置一起被內藏於前述處理容器。 此時，前述遮斷機構係設置爲可以將前述開口予以開 關，且係藉由開關從清潔前述被處理體之空間，將收容有 前述有機材料的空間予以遮斷或連通之蓋體。 如依據此，最終潔淨處理中，藉由以蓋體來關閉蒸鍍 源之開口，能將有機材料從潔淨氣體予以遮斷，有機膜形 成中，藉由以蓋體來打開蒸鍍源的開口，藉由從蒸鍍源所 被吹出的有機氣化分子，能於同一處理容器內被清潔之被 處理體的表面形成有機膜。藉此，可以提高被處理體的表 面與有機膜的密接性，可以提高能量界面控制性。 爲了提高藉由前述蓋體使收容有前述有機材料的空間 內部的密閉性，也可以於前述開口之周緣設置有0型環。 如依據此，可以更有效地將有機材料從潔淨氣體予以遮斷 -9- 200840113 。藉此，可以卻實地防止有機材料因潔淨氣體而劣化。 前述潔淨裝置’可以是··將潔淨氣體供給於前述處理 谷器內，且從前述潔淨氣體產生電漿，藉由所產生的電漿 之作用，於前述處理容器內清潔被處理體之電漿處理裝置 、或藉由照射光線’於前述處理容器內清潔被處理體之光 學洗淨裝置、或供給游離基，且藉由所供給的游離基之作 用，於前述處理容器內清潔被處理體之遙控電漿之至少其 中一種。 例如，將光學洗淨裝置之一例的U V臭氧潔淨器作爲 潔淨裝置使用的情形時，UV臭氧潔淨器係一面供給〇2氣 體’一面於被處理體表面照射184.9nm ( 6.7eV )及 253.7nm(4.9eV)之UV光。此時，氧氣（〇2)分子的結 合能爲5.11ev，184.9nm(6.7eV)之UV光無法分解氧氣 分子。即184.9nm ( 6.7eV )之UV光被氧氣分子吸收，使 產生臭氧。25 3.7nm ( 4.9eV )之UV光一被如此產生的臭 氧所吸收時，則產生激發狀態的氧氣原子。激發狀態的氧 氣分子與污染物化學反力，例如成爲C〇2或H2〇等之揮發 性分子，從被處理體的表面脫離，並從處理容器內被排出 外部。如此，污染物從被處理體的表面被除去，藉此，可 以將被處理體的表面清潔至成爲光滑的狀態。 例如，再將遙控電漿做爲潔淨裝置使用的情形時，藉 由從遙控電漿被噴射於處理容器內之例如氧氣氣體、氟氣 體、氯氣體等之游離基的作用，使與污染物化學反應，污 染物從被處理體的表面脫離，並從處理容器被排出外部。 10- 200840113 如此藉由從被處理體的表面除去污染物，可 的表面清潔至成爲光滑的狀態爲止。 另外，例如再將電漿處理裝置當成潔淨 形時，從潔淨氣體產生電漿，藉由所產生的 被處理體在處理容器內被清潔。此時，潔淨 :氧氣氣體、氟氣體、氯氣體、氧氣氣體化 化合物、氯氣體化合物之其中一種。如依據 體所產生的電漿，係包含有氧氣游離基、氟 離基之其中一種。藉此，與遙控電漿的情形 離基的作用來除去污染物，藉此，可以將被 清潔至成爲光滑的狀態爲止。 進而在電漿處理裝置之情形時，藉由包 離子被加入於被處理體的表層，被處理體的 的可能性。在此情形時，可以將移動於被處 之間的電洞的能量障壁進一步降低。此結果 更大，可以更爲改善電洞注入性能。藉此， 面抑制消耗電力，一面更長期地維持高的發 EL元件。 前述潔淨裝置以於前述處理容器內藉由 而在被處理體形成有機膜之前，於與前述處 處理容器內清潔前述被處理體爲佳。藉此， 再度附著於潔淨完畢的被處理體之狀況限制 且能於被處理體表面形成有機膜。 遮斷機構，以在清潔前述被處理體之前 以將被處理體 裝置使用的情 電漿的作用， 氣’體例如包含 合物、氟氣體 此，於由各氣 游離基、氯游 相同，藉由游 處理體的表面 含於電漿中的 表面有被改質 理體與有機膜 ，功函數變得 可以製造能一 光強度之有機 前述蒸鍍裝置 理容器相同的 可以將污染物 在最小限度， ，從清潔前述 -11 - 200840113 被處理體的空間來遮斷收容有前述有機材料之空間爲佳。 藉此，可以卻實地防止有機材料因潔淨氣體而劣化。 前述潔淨裝置，也可以將作爲前處理而在與前述處理 容器不同的處理容器內被清潔的被處理體進一步予以清潔 。藉此，可以在前述處理容器內，短時間確實地將事先於 別的處理容器清潔被處理體表面後，只於往前述處理容器 之搬運中附著於被處理體的污染物予以清潔。 遮斷機構，也可以在前述處理容器內清潔被處理體後 ’且於前述被處理體形成有機膜之前，將已清潔前述被處 理體之空間與收容有前述有機材料的空間予以連通。藉此 ，使有機材料氣化且清潔結束後，已氣化的有機分子放出 與已進行清潔之空間相同的空間，藉此，能夠於未被污染 ，且光滑的被處理體表面形成有機膜。 前述處理容器，可以是真空處理容器。如將處理容器 內保持爲特定的真空度來執行有機薄膜形成時，有機材料 的氣化分子在到達被處理體之前，與處理容器內的殘留氣 體分子碰撞的機率變得非常地低，從蒸鍍源所產生的熱不 會傳到處理容器內的其他零件（真空隔熱）。藉此，可以 高精度地控制處理容器內的溫度。此結果，可以提高薄膜 形成的控制性’能在被處理體形成均勻且良質的有機膜。 前述蒸鍍源，係被內藏於與前述處理容器不同的真空 處理容器’前述閥門也可以釋放於大氣系統。藉此，內藏 蒸鍍源之處理谷與於被處理體形成有機膜之處理容器， 係另外設置。藉此’於補充有機材料時，只要將內藏有蒸 -12- 200840113 鍍源之處理容器開放於大氣系統即可，不需要將進 薄膜形成處理的處理容器開放於大氣系統。藉此， 理裝置的維護性可以更爲提高。 前述蒸鍍源及前述閥門，也可以內藏於與前述 器不同的真空處理容器。如此，不單蒸鍍源，閥門 於與前述處理容器不同的真空處理容器，與將閥門 大氣壓下之情形相比，可以防止通過空氣而將閥門 放於外部。藉此，可以防止被氣化的有機分子例如 連接管，從吹出機構所供給的氣體分子量減少，蒸 降低的情形。 前述基板處理裝置，爲具備：複數個以前述蒸 前述連接管及前述吹出機構爲一組之蒸鍍裝置，前 組之蒸鍍裝置的各蒸鍍源，係收容不同種類的有機 即述複數組之蒸鑛裝置的各吹出機構，係被內藏於 理容器， 藉由將於前述複數組的蒸鍍裝置的蒸鍍源所被 有機材料從內藏於前述處理容器的各吹出機構予以 於與前述處理容器相同的處理容器內被清潔後之被 連續地形成不同種類的有機膜。 如依據此，於同一處理容器內連續地形成複數 。藉此，可以使產出提高，得以提高產品的生產性 ，如以往般，不需要針對每一個形成的有機膜另外 數個處理容器，設備不會大型化，能夠降低設備成: 另外，前述蒸鍍裝置，也可以將有機EL薄膜 行有機 基板處 處理容 也內藏 配置於 的熱釋 析出於 鍍速度 鍍源、 述複數 材料， 前述處 氣化的 吹出， 處理體 有機膜 。另外 設置複 长。 形成材 -13- 200840113 料或有機金屬薄膜形成材料當成有機材料，於被處理體 成有機EL膜或有機金屬膜之其中一種。 另外，爲了解決前述課題，如依據本發明之其他型 ，爲提供一種潔淨方法，係使用具備有：處理容器、及 谷有機材料，且藉由所被收容之有機材料，於前述處理 器內在被處理體形成有機膜之蒸鍍裝置的基板處理裝置 清潔被處理體之方法，其特徵爲：藉由使遮斷機構動作 從藉由前述處理容器所劃定的空間來遮斷收容有前述有 材料的空間，前述遮斷後，藉由潔淨裝置於前述處理容 內清潔被處理體，於清潔前述被處理體後，藉由使遮斷 構動作，使已清潔前述被處理體之空間及收容前述有機 料的空間連通，且使前述所被收容的有機材料氣化，於 述連通後，藉由將已氣化的有機材料從收容有前述有機 料的空間吹出清潔前述被處理體的空間，於與已清潔前 被處理體之處理容器相同的處理容器內，於前述被清潔 被處理體形成有機膜。 也可以於與前述處理容器不同的處理容器清潔被處 體’於前述別的處理容器被清潔後，將從前述別的處理 器被搬運至前述處理容器的被處理體藉由前述潔淨裝置 一步予以清潔，於已清潔後之被處理體形成有機膜。 如依據此，藉由遮斷機構，可以一面避免收容於蒸 裝置之有機材料，在清潔中與潔淨氣體化學反應而劣化 一面於幾乎不存在有污染物之被處理體的表面密接形成 機膜。進而，如依據此，於使用潔淨裝置來清潔被處理 形 態 收 容 來 機 器 機 材 刖 材 述 之 理 容 進 鍍 有 體 -14 - 200840113 的表面時，處理容器內部也同時被清潔，可以使基板處理 裝置之維護週期變長。 發明效果 如以上說明般，依據本發明之一型態，可以不使有機 材料劣化而與IT 0表面密接形成有機膜。 【實施方式】 以下，一面參照所附圖面，一面詳細說明本發明之實 施型態。另外，於以下之說明及所附圖面中，對於具有相 同構成及功能的構成要素，藉由賦予相同符號，省略重複 說明。另外，本說明書中，lmTorr係設爲（ΙΟ·3 X 101325/760) Pa，lsccm 係設爲（10-6/60) m3/sec。 (第1實施型態） 首先，一面參照第1圖一面說明關於本發明之第1實 施型態之基板處理裝置。 (基板處理裝置） 關於第1實施型態之基板處理裝置1 〇，係具有複數個 處理容器之群集型的製造裝置，由：裝載閉鎖室LLM、搬 運室TM(Transfer Module)、前處理室CM及4個處理 容器 PM ( Process Module) 1 〜PM4 所構成。 裝載閉鎖室L L Μ係將從大氣系統所搬運之基板G搬 -15- 200840113 運至處於減壓狀態之搬運室TM，而將內 態之真空搬運室。另外，於從大氣系統被 LLM之基板G，事先於玻璃基板上形成 ITO。 搬運室TM係使用配設於其內不之可 關節狀之搬運手臂Arm，最初將從裝載閉 運之基板G搬運至前處理室CM，接著， PM1，進而搬運至其他的處理容器PM2〜 C Μ中（潔淨），除去附著於形成在基板 的ΙΤΟ的表面之污染物。另外，主要污染 4個處理容器ΡΜ1〜ΡΜ4，係對基板 處理。具體而言，於處理容器ΡΜ1中， 理室CM對處理容器ΡΜ1搬運基板G時 板的ITO表面之污染物的最終潔淨處理； 理後之ITO表面6層連續形成有機膜之處 理容器PM2〜4中，分別實行蝕刻處理、 Vapor Deposition :化學蒸鍍薄膜形成法 理。 (處理容器PM1 ) 接著，一面參照模型地表示於第2 | 面圖，一面更詳細地說明處理容器Ρ Μ 1 理容器ΡΜ1係具有：第1處理容器100 200 ° 部保持在減壓狀 搬入裝載閉鎖室 有作爲陽極層之 伸縮及旋轉的多 丨鎖室LLM所搬 搬運至處理容器 -4。於前處理室 G之作爲陽極層 物爲有機物。 G施以所期望的 實行：將從前處 ，再度附著於基 及於最終潔淨處 理。另外，於處 CVD ( Chemical )處理、濺鍍處 ]之PM1的縱剖 的內部構成。處 及第2處理容器 -16- 200840113 (第1處理容器） 第1處理容器1 00爲立方體形狀，於其內部具有：滑 動機構110、電漿處理裝置120、UV臭氧潔淨器122、遙 控電漿124、6個吹出機構13〇 a〜！30f及7個隔壁140。於 第1處理容器1 00的側壁設置有藉由開關可以將基板G搬 出搬入之閘門閥1 5 0。 UV臭氧潔淨器122系光學洗淨裝置的一例。另外， 電漿處理裝置120、UV臭氧潔淨器122及遙控電漿124 係潔淨裝置的一例。即PM 1做爲潔淨裝置，可以具有： 電漿處理裝置120、光學洗淨裝置或遙控電漿124之至少 其中一種，如此藉由設置於PM 1之潔淨裝置，可以對於 基板G執行最終潔淨處理。 滑動機構110係具有：工作台ll〇a、支撐體ll〇b及 滑動機構ll〇c。工作台ll〇a係藉由支撐體ii〇b所支撐， 藉由從未圖示出的高電壓電源所施加的高電壓將從閘門閥 1 5 0所搬入之基板予以靜電吸附。滑動機構i丨〇 c係被裝置 於第1處理容器1 0 0的天花板部並且接地，使基板與工作 台110a及支撐體110b —同地與朝第1處理容器1〇〇的長 邊方向平行之方向滑動，藉此，使得基板G在電漿處理裝 置1 2 0及各吹出機構1 3 0之間移動。 (電漿處理裝置） 於電漿處理裝置120設置有電極120a。電極120a係 -17- 200840113 藉由設置於其下部的絕緣材120b而與第1處理容器loo 電性分離。於電極120a介由匹配電路120c而連接有高頻 電源120d，高頻電源120d係介由電容器120e而接地。 於電極120a介由氣體管線120f而連接有氣體供給源 120g，將從氣體供給部445所供給的潔淨氣體從複數個氣 體噴射孔A噴射於第1處理容器1 〇〇內。如此，電極 120a也作用爲氣體淋浴頭。 第1處理容器1 〇〇的內部係藉由未圖示出的排氣機構 而被減壓至所期望的真空度。藉由此種構成，使從氣體供 給源120g所供給的潔淨氣體藉由從高頻電源120d所輸出 的高頻電力予以電漿化，藉由該電漿的作用，來除去基板 G上的表面之污染物。 (UV臭氧潔淨器） UV臭氧潔淨器122係具有：UV燈122a、固定構件 122b及Ο型環122c。UV燈122a係一面供給〇2氣體一面 對基板G照射UV光。固定構件122b係以PM1的外部側 壁來固定UV燈122a，而且封鎖設置於處理容器100的側 壁之開口。〇型環122c爲了保持處理容器100內的機密 ，係設置於固定構件122b與處理容器100的接合面。1 to PM3 and Transfer ModuleTM. In the substrate processing apparatus, the substrate G is transported from the transfer lock chamber LLM to the pretreatment chamber CM via the transfer chamber A1 using the transfer arm Arm disposed in the transfer chamber TM. The pretreatment chamber CM removes contaminants from the surface of the ITO 200840113 (anode layer) attached to the glass substrate. After the ITO surface is cleaned in this manner, the substrate G is vacuum-transported to the processing container PM1 via the transfer chamber TM using the transfer arm Arm. As shown in Fig. 12, in the processing container p M 1 , the substrate G is carried in by opening the gate valve 1 200. The mask 1 205b formed of metal is attracted by the magnetic force from the stage 1205a acting as a magnet, and the loaded substrate G is sandwiched between the stages 1 205a and 1 205b. Thereafter, by sliding the sliding member 1205, the substrate G is moved directly above the vapor deposition source 1210, and the desired organic material contained in the accommodating portion 1210a of the vapor deposition source 1210 is vaporized. The organic molecules are deposited on the surface of the substrate G to form a hole transport layer (organic film (1)) on the surface of the ITO. In the same manner as in the processing container PM2 and the processing container PM3, a desired organic material is vaporized by each vapor deposition source, and a light-emitting layer (organic film (2)) and an electron transport layer (organic film (3) are laminated on the substrate G. )). As described above, in the cluster type substrate processing apparatus, the organic EL element can be efficiently manufactured. (Non-patent Document 1) Hitachi Shipbuilding Co., Ltd. "Organic EL vapor deposition apparatus <11&0>", [Online], [Search on December 9, 2006], Internet http://www.hitachizosen.co .jp/formset/set — pr2.html SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION However, even if the ITO surface is cleaned specifically for the pre-treatment chamber CM, the substrate G is pre-processed as shown in FIG. When the chamber C is moved into the processing container ΡΜ1, the contaminants present in the transfer chamber or the like adhere to the surface of the 200840113 I Τ. As a result, as shown in Fig. 12, when the hole transporting layer is formed on the surface of the crucible on the substrate G by the processing container 1, the adhesion between the contaminant ΙΤΟ and the hole transporting layer is deteriorated. The energy interface controllability deteriorates, and based on this, the energy barrier becomes high. As a result, the work function becomes small, the hole injection performance is lowered, and there is a problem that the luminous intensity (brightness) of the organic EL element is lowered. For this problem, for example, it is also conceivable to carry out the vapor deposition treatment in the same chamber immediately after the treatment container PM 1 cleans the surface of the I Τ 0. However, when the vapor deposition treatment and the cleaning treatment are continuously performed in the same chamber, the organic material contained in the storage portion 1 2 1 0 0 of the vapor deposition source 1 2 1 0 may chemically react with the clean gas to deteriorate. . Specifically, for example, as a clean gas, when a ruthenium gas is used, the organic material is chemically reacted with the 02 gas to be oxidized. Further, for example, as a clean gas, when a mixed gas of CF4 gas is mixed with 〇2 gas, the organic material is chemically reacted with CF4 gas to be oxidized and fluorinated. When the organic material thus deteriorated is vaporized, even if an organic layer is formed, the actual characteristics of the properties required for each organic layer are deteriorated, and a favorable organic EL device having high luminous intensity (brightness) cannot be produced. On the other hand, when it is desired to increase the luminous intensity, it is necessary to increase the applied voltage, which causes a problem that the power consumption is increased. In order to solve the problem described in the present invention, the present invention provides a new and improved substrate processing apparatus and a cleaning method using the substrate processing apparatus which can maintain the energy interface controllability of the ITO surface without deteriorating the organic material. 200840113 In order to solve the above problems, a substrate processing apparatus according to the present invention is characterized in that it comprises: processing an organic material, and forming an organic film on the object to be processed by the organic material contained therein; The vapor deposition device and the cleaning device for cleaning the object to be cleaned in the same processing container to block or connect the space between the object to be processed and the space. According to this, in the cleaning apparatus for the vapor-treated body in which the organic film is formed in the object to be processed, the organic film is formed in the same space after the same treatment is carried out to clean the object to be processed. As a result, no contaminated material is present on the object to be treated, and the treated organic film is scarcely present. In addition, the substrate processing apparatus is provided with a shutoff mechanism that closes or communicates with the space in which the organic material is stored by the space of the object to be processed. Thereby, it is possible to prevent the organic material from being chemically reacted with the clean gas in the cleanness, and the surface of the object to be treated which is smooth in the presence of almost no contaminant, thereby improving the object to be treated on the surface of the smooth object to be treated Adhesion to the organic film, and interface controllability. As a result, the energy barrier of the holes (or electrons) moving between the processes can be reduced. A type is a lifting container; and the processing container is disposed in the processing container; and the empty plating device and the cleaner are opened by opening the organic material. Thereby, the surface on which the surface to be treated is attached or reattached can be formed by the switch capable of shielding the space to be cleaned and deposited, and the organic film can be formed on one surface to form an organic film, and the energy and organic film can be favorably maintained. 200840113 In particular, when a hole transport layer is formed on the surface of the anode layer (for example, ITO) on the substrate G to be processed, 'based on the contaminant, the adhesion between the ITO and the electrode transport layer is deteriorated, based on the energy interface Poor controllability 'energy barrier becomes higher. As a result, the work function becomes small, the hole injection performance is lowered, and the luminous intensity (brightness) of the organic EL element is lowered. However, according to such a configuration, as described above, the hole transport layer is formed in close contact with the surface of the ITO, and the energy interface controllability can be favorably maintained. As a result, the work function becomes large, and the luminous intensity of the organic EL element can be maintained by improving the hole injection performance. As a result, it is possible to manufacture an organic EL element which can obtain high luminous intensity while suppressing power consumption. Further, according to this configuration, when the surface of the object to be treated is cleaned by using a cleaning device, the inner wall of the processing container or the components attached to the processing container can be cleaned. As a result, the maintenance period of the substrate processing apparatus can be lengthened. The vapor deposition device includes: a vapor deposition source having a housing portion for vaporizing an organic material accommodated in the housing portion; and a connection tube connected to the vapor deposition source; and an opening having an opening and vapor deposition a blowing mechanism that blows the organic material conveyed by the connecting pipe from the opening, and the blowing mechanism may be built in the processing container together with the cleaning device, and the blocking mechanism may be disposed at The connecting pipe is a valve for shutting off or connecting a space in which the organic material is accommodated by a switch from a space for cleaning the object to be processed. " According to this, by closing the valve, the organic material can be blocked from the clean gas of 200840113, and the organic vaporized molecules blown out from the blowing mechanism can be cleaned by opening the valve. An organic film is formed on the surface of the object to be treated after the final cleaning in the same processing container as that of the final cleaned object to be processed. By forming an organic film on the surface of the object to be treated in a very clean state, the adhesion between the surface of the object to be treated and the organic film can be improved, and the energy interface controllability can be improved. In addition, the so-called gasification is not only a phenomenon in which a liquid becomes a gas, but also a phenomenon in which a solid directly becomes a gas without passing through a liquid state (i.e., sublimation). The vapor deposition device includes a vapor deposition source having a housing portion and an opening, and vaporizing an organic material accommodated in the housing portion, and blowing the vaporized organic material from the opening; the vapor deposition source may be The aforementioned cleaning device is built together in the aforementioned processing container. In this case, the shutoff mechanism is provided to be capable of opening and closing the opening, and is a cover that blocks or connects the space in which the organic material is accommodated by cleaning the space of the object to be processed by a switch. According to this, in the final cleaning treatment, the organic material can be blocked from the clean gas by closing the opening of the vapor deposition source with the lid body, and the opening of the vapor deposition source is opened by the lid body during the formation of the organic film. An organic film can be formed on the surface of the object to be cleaned in the same processing container by the organic vaporized molecules blown from the vapor deposition source. Thereby, the adhesion between the surface of the object to be treated and the organic film can be improved, and the energy interface controllability can be improved. In order to improve the airtightness of the inside of the space in which the organic material is accommodated by the lid body, an O-ring may be provided on the periphery of the opening. According to this, the organic material can be more effectively blocked from the clean gas -9- 200840113. Thereby, it is possible to prevent the organic material from being deteriorated by the clean gas. The cleaning device may be configured to supply a clean gas into the processing tank, and generate a plasma from the clean gas, and clean the plasma of the object to be processed in the processing container by the action of the generated plasma. Processing device, or optical cleaning device for cleaning the object to be processed in the processing container by irradiating light, or supplying a radical, and cleaning the object to be processed in the processing container by the action of the supplied radical At least one of remote plasma. For example, when a UV ozone cleaner of an example of an optical cleaning device is used as a cleaning device, the UV ozone cleaner supplies 184.9 nm (6.7 eV) and 253.7 nm to the surface of the object to be processed while supplying the gas. 4.9 eV) UV light. At this time, the oxygen (〇2) molecule has a binding energy of 5.11 ev, and 184.9 nm (6.7 eV) of UV light cannot decompose the oxygen molecule. That is, 184.9 nm (6.7 eV) of UV light is absorbed by oxygen molecules to generate ozone. When the UV light of 3.7 nm (4.9 eV) is absorbed by the ozone generated as described above, an oxygen atom in an excited state is generated. The chemical reaction force of the oxygen molecules in the excited state and the contaminant, for example, a volatile molecule such as C〇2 or H2〇, is separated from the surface of the object to be treated and discharged from the inside of the processing container. Thus, the contaminant is removed from the surface of the object to be treated, whereby the surface of the object to be treated can be cleaned to a smooth state. For example, when the remote control plasma is used as a clean device, the chemical reaction with the pollutants is performed by a free radical such as oxygen gas, fluorine gas, chlorine gas or the like sprayed from the remote control plasma into the processing container. In response, the contaminants are detached from the surface of the object to be treated and discharged from the processing container to the outside. 10- 200840113 By removing contaminants from the surface of the object to be treated, the surface can be cleaned to a smooth state. Further, for example, when the plasma processing apparatus is again in a clean shape, plasma is generated from the clean gas, and the generated object to be processed is cleaned in the processing container. At this time, it is clean: one of oxygen gas, fluorine gas, chlorine gas, oxygen gasification compound, and chlorine gas compound. For example, the plasma generated by the body contains one of oxygen radicals and fluorine radicals. Thereby, the contaminant is removed by the action of the remotely controlled plasma, whereby it can be cleaned to a smooth state. Further, in the case of the plasma processing apparatus, there is a possibility that the coated ions are added to the surface layer of the object to be processed, and the object to be processed. In this case, the energy barrier that moves to the hole between the places can be further lowered. This result is even larger and can improve the hole injection performance. As a result, the EL element is maintained at a higher temperature for a longer period of time while suppressing power consumption. The cleaning apparatus preferably cleans the object to be processed in the processing container before the object is formed in the processing container by forming the organic film in the processing container. Thereby, the condition of adhering to the cleaned object to be treated is restricted, and an organic film can be formed on the surface of the object to be processed. The blocking mechanism is configured to act as a plasma for the object to be processed before cleaning the object to be processed, and the gas body is, for example, a compound or a fluorine gas, which is obtained by the same gas radical and chlorine. The surface of the surface of the processing body contained in the plasma has a modified physical body and an organic film, and the work function becomes the same as that of the organic vapor deposition device having the light intensity. The contaminant can be minimized. It is preferable to clean the space in which the above-mentioned organic material is accommodated by cleaning the space of the object to be processed -11 - 200840113. Thereby, it is possible to prevent the organic material from being deteriorated by the clean gas. In the cleaning apparatus described above, the object to be processed which is cleaned in the processing container different from the processing container as the pretreatment may be further cleaned. As a result, it is possible to clean the surface of the object to be processed in advance in the processing container in a short period of time, and then to clean the contaminants adhering to the object to be processed only during the conveyance of the processing container. The shutoff mechanism may be configured to communicate the space in which the object to be treated has been cleaned and the space in which the organic material is contained before the object to be processed is cleaned in the processing container. Thereby, after the organic material is vaporized and the cleaning is completed, the vaporized organic molecules release the same space as the space in which the cleaning has been performed, whereby the organic film can be formed on the surface of the object to be treated which is not contaminated and smooth. The aforementioned processing container may be a vacuum processing container. When the organic film formation is performed by maintaining the inside of the processing container at a specific degree of vacuum, the probability that the vaporized molecules of the organic material collide with the residual gas molecules in the processing container before reaching the object to be processed becomes extremely low, from steaming The heat generated by the plating source does not pass to other parts in the processing vessel (vacuum insulation). Thereby, the temperature inside the processing container can be controlled with high precision. As a result, it is possible to improve the controllability of film formation, and it is possible to form a uniform and good organic film in the object to be processed. The vapor deposition source is housed in a vacuum processing container different from the processing container. The valve may be released to the atmospheric system. Thereby, the processing tank in which the vapor deposition source is contained and the processing container in which the organic film is formed in the object to be processed are separately provided. Therefore, when the organic material is replenished, it is only necessary to open the processing container in which the vaporization-12-200840113 plating source is contained in the atmospheric system, and it is not necessary to open the processing container for the film formation treatment to the atmospheric system. Thereby, the maintainability of the device can be further improved. The vapor deposition source and the valve may be housed in a vacuum processing container different from the above. Thus, not only the evaporation source but also the valve in a vacuum processing container different from the above-described processing container can prevent the valve from being placed outside by the air as compared with the case where the valve is at atmospheric pressure. Thereby, it is possible to prevent the vaporized organic molecules such as the connecting pipe from being reduced in molecular weight and vaporization from the gas supplied from the blowing means. The substrate processing apparatus includes a plurality of vapor deposition devices that store the plurality of connection tubes and the blowing mechanism, and each vapor deposition source of the vapor deposition device of the front group accommodates different types of organic layers. Each of the blowing means of the steaming device is housed in the processing container, and the organic material is deposited from the vapor deposition source of the vapor deposition device of the plurality of arrays from each of the blowing means built in the processing container. The same processing container in the same processing container is continuously cleaned to form different kinds of organic films. According to this, plural numbers are continuously formed in the same processing container. Thereby, the output can be improved, and the productivity of the product can be improved. As in the past, there is no need to separately process a plurality of processing containers for each of the formed organic films, and the apparatus is not enlarged, and the apparatus can be reduced: In the plating apparatus, the organic EL film may be subjected to thermal decomposition at the organic substrate, and the thermal decomposition may be carried out by a plating rate source and a plurality of materials, and the gas is blown out to treat the organic film. Also set the retraction. Forming material -13- 200840113 The material or the organic metal thin film forming material is an organic material, and is treated as one of an organic EL film or an organic metal film. Further, in order to solve the above problems, according to another aspect of the present invention, in order to provide a cleaning method, a processing container and a cereal organic material are used, and the organic material contained therein is contained in the processor. A method of cleaning a target object by a substrate processing apparatus of a vapor deposition device for forming an organic film, wherein the operation of the blocking mechanism is interrupted by a space defined by the processing container After the above-mentioned blocking, the object to be processed is cleaned in the processing chamber by the cleaning device, and after cleaning the object to be processed, the space of the object to be processed is cleaned and the organic body is accommodated by the blocking operation. The material is connected to the space, and the organic material contained therein is vaporized. After the communication is made, the vaporized organic material is blown out from the space in which the organic material is contained, and the space for cleaning the object to be processed is dried. In the same processing container in which the processing container of the object to be processed has been cleaned, an organic film is formed on the object to be cleaned. It is also possible to clean the object to be treated in a different processing container than the aforementioned processing container. After the other processing container is cleaned, the object to be processed which is transported from the other processor to the processing container is subjected to the cleaning device in one step. Clean and form an organic film on the treated object after cleaning. According to this, the organic material contained in the steaming device can be prevented by the blocking mechanism, and the surface of the object to be treated which is hardly contaminated can be formed in close contact with each other to form a film on the surface of the object to be treated which is hardly contaminated by chemical reaction with the clean gas during cleaning. Further, according to this, when the cleaned device is used to clean the surface of the machine material, and the surface of the processing body is plated with the body 14 - 200840113, the inside of the processing container is also cleaned at the same time, so that the substrate processing apparatus can be cleaned. The maintenance cycle becomes longer. Advantageous Effects of Invention As described above, according to one aspect of the present invention, an organic film can be formed in close contact with the surface of IT 0 without deteriorating the organic material. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description and the drawings, the same reference numerals are given to the components having the same configurations and functions, and the overlapping description will be omitted. In the present specification, the lmTorr system is (ΙΟ·3 X 101325/760) Pa, and the lsccm system is (10-6/60) m3/sec. (First embodiment) First, a substrate processing apparatus according to a first embodiment of the present invention will be described with reference to Fig. 1 . (Substrate processing apparatus) The substrate processing apparatus 1 of the first embodiment is a cluster type manufacturing apparatus having a plurality of processing containers, and includes a loading lock chamber LLM, a transfer chamber TM (Transfer Module), and a pretreatment chamber CM. And four processing containers PM (Process Module) 1 ~ PM4. The loading lock chamber L L is transported from the substrate G transported by the atmospheric system -15- 200840113 to the transfer chamber TM in a decompressed state, and the internal vacuum transfer chamber. Further, ITO is formed on the glass substrate in advance from the substrate G of the LLM from the atmospheric system. The transfer chamber TM is transported from the loading and unloading substrate G to the pretreatment chamber CM by using the articulated arm Arm disposed therein, and then transported to the other processing containers PM2 to C. The crucible (clean) removes contaminants attached to the surface of the crucible formed on the substrate. In addition, the four processing containers ΡΜ1 to ΡΜ4 are mainly contaminated, and the substrate is processed. Specifically, in the processing container ΡΜ1, the final cleaning treatment of the ITO surface of the board when the processing chamber 搬运1 carries the substrate G in the processing chamber CM1; the processing container PM2~4 in which the organic film is continuously formed on the ITO surface 6 layers. In the middle, etching treatment, Vapor Deposition: chemical vapor deposition film formation method are respectively performed. (Processing Container PM1) Next, the processing container 更 1 will be described in more detail with reference to the model in the second side view. The first processing container 100 is placed at a reduced pressure loading position. The lock chamber is transported to the processing container-4 by a multi-lock chamber LLM which is an expansion and contraction of the anode layer. The anode layer in the pretreatment chamber G is an organic material. G applies the desired implementation: from the front, reattach to the base and final cleansing. In addition, the internal structure of the longitudinal section of the PM1 at the CVD (Chemical) treatment or sputtering site is formed. And the second processing container-16-200840113 (first processing container) The first processing container 100 has a cubic shape, and has a sliding mechanism 110, a plasma processing device 120, a UV ozone cleaner 122, and a remote control plasma. 124, 6 blowing mechanisms 13〇a~! 30f and 7 partitions 140. A gate valve 150 that can carry out the substrate G by a switch is provided on the side wall of the first processing container 100. The UV ozone cleaner 122 is an example of an optical cleaning device. Further, the plasma processing apparatus 120, the UV ozone cleaner 122, and the remote control plasma 124 are examples of the cleaning apparatus. That is, the PM 1 as a clean device may have at least one of a plasma processing device 120, an optical cleaning device, or a remote control plasma 124, so that the final cleaning process can be performed on the substrate G by the cleaning device disposed in the PM 1. . The slide mechanism 110 has a table 11a, a support 11b, and a slide mechanism 111c. The stage ll〇a is supported by the support ii 〇 b, and is electrostatically adsorbed from the substrate loaded by the gate valve 150 by a high voltage applied from a high voltage power source not shown. The sliding mechanism i丨〇c is placed in the ceiling portion of the first processing container 100 and grounded, so that the substrate is parallel to the longitudinal direction of the first processing container 1〇〇 in the same manner as the table 110a and the support 110b. The direction is slid, whereby the substrate G is moved between the plasma processing apparatus 120 and each of the blowing mechanisms 1130. (plasma processing apparatus) The electrode processing apparatus 120 is provided with an electrode 120a. The electrode 120a -17-200840113 is electrically separated from the first processing container loo by the insulating material 120b provided at the lower portion thereof. The high frequency power supply 120d is connected to the electrode 120a via the matching circuit 120c, and the high frequency power supply 120d is grounded via the capacitor 120e. The gas supply source 120g is connected to the electrode 120a via the gas line 120f, and the clean gas supplied from the gas supply unit 445 is ejected from the plurality of gas injection holes A into the first processing container 1A. Thus, the electrode 120a also functions as a gas shower head. The inside of the first processing container 1 is decompressed to a desired degree of vacuum by an exhaust mechanism (not shown). With such a configuration, the clean gas supplied from the gas supply source 120g is plasma-treated by the high-frequency power output from the high-frequency power source 120d, and the surface on the substrate G is removed by the action of the plasma. Contaminants. (UV ozone cleaner) The UV ozone cleaner 122 has a UV lamp 122a, a fixing member 122b, and a Ο-shaped ring 122c. The UV lamp 122a irradiates the substrate G with UV light while supplying the 〇2 gas. The fixing member 122b fixes the UV lamp 122a with the outer side wall of the PM1, and blocks the opening provided to the side wall of the processing container 100. The 〇-shaped ring 122c is provided on the joint surface of the fixing member 122b and the processing container 100 in order to maintain the confidentiality in the processing container 100.
UV臭氧潔淨器係一面供給〇2氣體一面對被處理體表 面照射 184.9nm(6.7eV)及 253.7nm(4.9eV)的 UV 光。 此時，氧氣（〇2 )分子的結合能爲 5.11ev，184.9nm ( 6.7eV)的UV光可以分解氧氣分子。BP 184.9nm(6.7eV -18- 200840113 )的 uv光係被氧氣分子所吸收，而使產生臭氧。 2 53.7nm(4.9eV)的UV光一被如此所產生的臭氧所吸收 時，會產生激發狀態的氧氣原子。激發狀態的氧氣分子與 污染物化學反應，例如成爲C Ο2或Η2 Ο等之揮發性分子， 從基板G的表面脫離，從處理容器1 〇 〇被排出外部。如此 ，從基板G的表面除去污染物，藉此，可以清潔基板G 的表面成爲光滑的狀態爲止。 (遙控電漿） 遙控電漿124係具有：容器124a、線圏124b、高頻 電源124c、搬運管124d及電容C。從氣體供給源120g例 如對容器124a供給〇2氣體。從高頻電源124c所輸出的 高頻電力一被施加於線圈1 24b時，於線圈1 24b的周圍產 生高頻磁場。藉由此磁場的時間性變化所感應的感應電場 ，〇2氣體於容器1 24a內被電漿化。如此所產生的感應結 合電漿中，〇2游離基的生命期變長。此結果，只有活性的 〇2游離基介由搬運管124d被供給至處理容器100的內部 〇 藉此，使游離基與污染物化學反應，使污染物從基板 G的ITO表面脫離，可以從處理容器100排出外部。此結 果，污染物從基板G的ITO表面被除去，藉此，可以清潔 基板G的ITO成爲光滑的狀態爲止。另外，從遙控電漿 1 2 4所噴射的游離基如包含氧氣游離基、氟氣游離基、氯 氣游離基之其中一種即可。 -19- 200840113 6個吹出機構130a〜13 Of，係形狀及構造全部相同， 且相互平行而等間隔地配置。吹出機構1 3 0 a〜1 3 0 f係其內 部成爲中空的矩形形狀，從設置於其上部中央的開口吹出 有機氣化分子。吹出機構130a〜130f的下部係個別連結於 貝穿弟1處理谷器1〇〇的底壁之連接管160a〜160f。 於各吹出機構1 3 0之間個別設置有隔壁1 40。隔壁 1 40係藉由隔開各吹出機構1 3 0，來防止從各吹出機構1 3 0 的開口所被吹出的有機氣體分子混入從相鄰的吹出機構 130所被吹出的有機氣體分子。 (第2處理容器） 接著，說明第2處理容器2 00的形狀及內部構成。第 2處理容器200係個別內藏有形狀及構造相同的6個蒸鍍 源210a〜210f。蒸鍍源210a〜210f係於收容部210al〜210Π 個別收容不同的有機材料，藉由使各收容部2 1 0附近成爲 200〜5 00 °C程度的高溫，使各有機材料氣化。 蒸鍍源 210a〜210f係於其上部個別連接於連接管 160a〜160f，藉由將各連接管160保持於高溫，於各蒸鍍 源210被氣化的有機分子不會附著於各連接管160，會通 過各連接管1 6 0而從吹出機構1 3 0的開口被放出於第1處 理容器內。 另外，第2處理容器200 ’爲了將其內部保持爲特定 的真空度，藉由未圖示出的排氣機構被減壓至所期望的真 空度。藉此，避免從蒸鍍源2 1 0所產生的熱傳達至設置於 -20- 200840113 第2處理容器200的內部之其他零件，可以高精度地控制 第2處理容器內的溫度。此結果，可以提高薄膜形成的控 制性，能於基板G形成均勻且良質的有機膜。 於各連接管1 60個別安裝有：藉由開關將清潔基板G 之空間與師容有機材料的蒸鍍源2 1 0內的空間予以遮斷或 連通之作爲遮斷機構的閥門3 00a〜3 00f。具體而言，如關 閉各閥門3 00時，收容各有機材料的空間被與清潔基板G 之第1處理容器內部的空間遮斷，如打開各閥門3 00時， 收容各有機材料之空間與清潔基板G之第1處理容器內部 的空間連通。在本實施形態中，各閥門3 0 0係被放出於大 氣中。另外，蒸鍍源2 1 0、連接管1 6 〇級吹出機構丨3 〇， 係收容有機材料，藉由所收容的有機材料於處理容器PM 內，於基板G形成有機膜之蒸鍍裝置的一例。 (6層連續薄膜形成） 如以上說明般，基板處理裝置1 〇的處理容器ρ Μ 1， 爲了連續地形成6層之有機膜，係具備以蒸鍍源21〇、連 接管1 6 0及吹出機構1 3 0爲一組之蒸鍍裝置共6組，6組 的蒸鍍裝置的各蒸鍍源2 1 0，係收容不同種類的有機材料 ’ 6組的蒸鍍裝置的各吹出機構〗3 〇，係與潔淨裝置一同 地被內藏於處理容器PM 1。藉由此種構成，於6組的蒸鍍 衣置的黑鍍源2 1 0被氣化的有機材料，係從內藏於處理容 器PM1之各吹出機構130而被吹出。 關於6層連|買薄|吴形成裝置，一面參考第3圖一面更 -21 · 200840113 具體地說明。首先，基板G以某種速度在吹出機構130a 的上方行進時，藉由從吹出機構1 3 〇 a所吹出的薄膜形成 材料附著於基板G上的IT〇 (陽極），於基板G形成第1 層的電洞輸送層（有機層（丨））。接著，基板G移動於 吹出機構130b之上方時，藉由從吹出機構13〇b所吹出的 薄膜形成材料附著於基板G，於基板G形成第2層之非發 光層（電子阻障層，有機層（2 ))。同樣地，基板移動 於吹出機構130c—吹出機構I30d—吹出機構I30d—吹出 機構130e—吹出機構130f之上方時，藉由從各吹出機構 1 3 0所吹出的薄膜形成材料，於基板g形成第3層之藍色 發光層（有機層（3))、第4層之紅色發光層（有機層 (〇);第5層之綠色發光層（有機層（5))、第6層 之電子輸送層（有機層（6))。 (薄膜形成處理） 接著’關於使用如前述般所構成的基板處理裝置1〇 來清潔基板G之方法，特別是在處理容器ρ μ 1所實行的 處理爲中心來做說明。 (前處理：潔淨處理） 基板G係藉由配設於第1圖所示的搬運室ΤΜ之搬運 手臂Arm，介由搬運室ΤΜ而從裝載閉鎖室LLM被搬運至 前處理室C Μ。在前處理室C Μ中，附著於基板G上的 ΙΤΟ的表面之污染物被除去。 -22- 200840113 (最終潔淨處理） 如此在清潔ITO表面後，基板G藉由搬運手臂 且透過搬運室TM而被真空搬運至處理容器PM1。在 容器PM 1中，藉由打開第2圖的閘門閥1 5 0，基板G 入。所被搬入的基板G，係藉由從未圖示出的高電壓 所施加的高電壓，被靜電吸附於工作台；! i 0a。之後， 使滑動機構1 1 0滑動，使基板G移動至電漿處理裝置 的正上方。 在最終潔淨基板G之前，全部的閥門3 00 a〜3 00f 閉。藉此，收容了有機材料之空間（即收容部21 0 21〇bl 、 210cl 、 210dl 、 210el 、 210fl 之內部空間） 最終潔淨基板G之空間（即第1處理容器1 〇 〇的內部 )遮斷。 如此在清潔時，藉由以各閥門3 0 0來將清潔之空 收谷有機材料的空間予以遮斷，可以避免個別收容於 源2 l〇a〜21 〇f之有機材料，在清潔中與潔淨氣體化學 而劣化。 即述條件齊備時，潔淨裝置在第1處理容器1 〇 〇 潔基板G的ITO表面（最終潔淨）。此最終潔淨係具 下之思我。即就算特地在前處理室CM中清潔ITO的 ’但是如第1圖所示般，在藉由搬運手臂Arm將基 從則處理室CM搬運至處理容器pMi時，存在於搬 沈閘門閥1 5 0等之污染物會再度附著於〗τ 〇表面。The UV ozone cleaner supplies UV gas of 184.9 nm (6.7 eV) and 253.7 nm (4.9 eV) to the surface of the object to be treated while supplying 〇2 gas. At this time, the binding energy of the oxygen (〇2) molecule is 5.11 ev, and the UV light of 184.9 nm (6.7 eV) can decompose the oxygen molecules. The uv light system of BP 184.9 nm (6.7 eV -18- 200840113) is absorbed by oxygen molecules to generate ozone. When 5 53.7 nm (4.9 eV) of UV light is absorbed by the ozone thus generated, an oxygen atom in an excited state is generated. The oxygen molecules in the excited state chemically react with the contaminant, for example, a volatile molecule such as C Ο 2 or Η 2 ,, which is detached from the surface of the substrate G and is discharged to the outside from the processing vessel 1 . In this way, contaminants are removed from the surface of the substrate G, whereby the surface of the substrate G can be cleaned to a smooth state. (Remote Control Plasma) The remote control plasma 124 has a container 124a, a coil 124b, a high-frequency power source 124c, a carrier tube 124d, and a capacitor C. The gas supply source 120g is supplied with, for example, 〇2 gas to the container 124a. When the high-frequency power output from the high-frequency power source 124c is applied to the coil 1 24b, a high-frequency magnetic field is generated around the coil 1 24b. The 〇2 gas is plasmaized in the vessel 1 24a by the induced electric field induced by the temporal change of the magnetic field. In the induction combined plasma thus produced, the lifetime of the 〇2 radical is prolonged. As a result, only the active 〇2 radical is supplied to the inside of the processing vessel 100 via the carrier tube 124d, thereby causing the radical to chemically react with the contaminant to detach the contaminant from the ITO surface of the substrate G, which can be processed from The container 100 is discharged to the outside. As a result, the contaminants are removed from the surface of the ITO of the substrate G, whereby the ITO of the substrate G can be cleaned to a smooth state. Further, the radical which is ejected from the remotely controlled plasma 1 24 may be one of an oxygen radical, a fluorine radical, and a chlorine radical. -19- 200840113 The six blowing mechanisms 130a to 13 Of have the same shape and structure, and are arranged in parallel with each other at equal intervals. The blowing mechanism 1 3 0 a to 1 3 0 f has a hollow rectangular shape inside, and blows out organic vaporized molecules from an opening provided at the center of the upper portion thereof. The lower portions of the blowing mechanisms 130a to 130f are individually connected to the connecting pipes 160a to 160f of the bottom wall of the bowling device 1 . A partition wall 144 is separately provided between each of the blowing mechanisms 130. The partition wall 1 40 prevents the organic gas molecules blown from the openings of the respective blowing mechanisms 1 30 from being mixed with the organic gas molecules blown from the adjacent blowing means 130 by separating the respective blowing mechanisms 130. (Second Processing Container) Next, the shape and internal configuration of the second processing container 200 will be described. In the second processing container 200, six vapor deposition sources 210a to 210f having the same shape and structure are individually housed. The vapor deposition sources 210a to 210f are accommodating the respective organic materials in the accommodating portions 210a1 to 210f, and vaporize the respective organic materials by setting the vicinity of each of the accommodating portions 2100 to a high temperature of about 200 to 500 °C. The vapor deposition sources 210a to 210f are individually connected to the connection pipes 160a to 160f at the upper portion thereof, and the organic molecules vaporized at the respective vapor deposition sources 210 are not adhered to the respective connection tubes 160 by maintaining the respective connection tubes 160 at a high temperature. It is discharged from the opening of the blowing mechanism 1 30 into the first processing container through the respective connecting tubes 160. Further, the second processing container 200' is decompressed to a desired degree of vacuum by an exhaust mechanism (not shown) in order to maintain the inside thereof at a specific degree of vacuum. Thereby, the heat generated from the vapor deposition source 210 is prevented from being transmitted to other components provided inside the second processing container 200 of -20-200840113, and the temperature in the second processing container can be controlled with high precision. As a result, the controllability of film formation can be improved, and a uniform and good organic film can be formed on the substrate G. Each of the connecting pipes 1 60 is separately provided with a valve 3 00a to 3 as a blocking mechanism for blocking or connecting a space in the cleaning substrate G and a space in the vapor deposition source 210 of the organic material of the organic material by a switch. 00f. Specifically, when the valves 300 are closed, the space for accommodating the respective organic materials is blocked by the space inside the first processing container of the cleaning substrate G. For example, when the valves are opened, the space for storing the organic materials is cleaned. The space inside the first processing container of the substrate G is in communication. In the present embodiment, each valve 300 is placed in the atmosphere. Further, the vapor deposition source 210 and the connection pipe 16 are blown up by the organic material, and the organic material is placed in the processing container PM to form an organic film vapor deposition device on the substrate G. An example. (6-layer continuous film formation) As described above, the processing container ρ Μ 1 of the substrate processing apparatus 1 为了 is provided with a vapor deposition source 21 〇, a connection tube 1 60, and a blown film in order to continuously form a six-layer organic film. The mechanism 130 is a group of 6 vapor deposition devices, and each of the vapor deposition devices of the 6 vapor deposition devices 2 1 0 is a separate blowing mechanism for storing different types of organic materials '6 sets of vapor deposition devices> The crucible is contained in the processing container PM 1 together with the cleaning device. According to this configuration, the organic material vaporized by the black plating source 2 10 in the vapor deposition coating of the six groups is blown out from the respective blowing mechanisms 130 housed in the processing container PM1. About 6-layer connection|Buy thin|Wu formation device, one side with reference to Fig. 3 one side more -21 · 200840113 Specifically. First, when the substrate G travels above the blowing mechanism 130a at a certain speed, the film forming material blown from the blowing mechanism 1 3 〇a adheres to the IT crucible (anode) on the substrate G, forming the first substrate G. Layer hole transport layer (organic layer (丨)). When the substrate G moves above the blowing mechanism 130b, the thin film forming material blown from the blowing mechanism 13bb adheres to the substrate G, and the second layer of the non-light emitting layer is formed on the substrate G (electron barrier layer, organic Layer (2)). Similarly, when the substrate is moved by the blowing means 130c - the blowing means I 30d - the blowing means I 30d - the blowing means 130e - above the blowing means 130f, the film forming material is blown from each of the blowing means 130, and the substrate g is formed. 3 layers of blue light-emitting layer (organic layer (3)), layer 4 of red light-emitting layer (organic layer (〇); 5th layer of green light-emitting layer (organic layer (5)), layer 6 electron transport Layer (organic layer (6)) (film formation treatment) Next, the method of cleaning the substrate G using the substrate processing apparatus 1 configured as described above, in particular, the processing performed by the processing container ρ μ 1 is centered. (Pre-treatment: clean processing) The substrate G is transported from the loading lock chamber LLM to the pre-treatment chamber via the transfer chamber 藉 by the transport arm Arm disposed in the transport chamber 第 shown in Fig. 1 . C. In the pretreatment chamber C, contaminants on the surface of the crucible attached to the substrate G are removed. -22- 200840113 (final cleaning treatment) After cleaning the surface of the ITO, the substrate G is transported by the arm and transmitted through Handling chamber TM and being transported by vacuum everywhere The container PM1 is opened in the container PM1 by opening the gate valve 150 of Fig. 2. The substrate G carried in is a high voltage applied by a high voltage not shown. After being electrostatically adsorbed to the table; ! i 0a. Thereafter, the sliding mechanism 110 is slid to move the substrate G directly above the plasma processing apparatus. Before the final cleaning of the substrate G, all the valves 3 00 a to 3 00f is closed. Thereby, the space in which the organic material is accommodated (that is, the internal space of the accommodating portions 21 0 21 〇 bl , 210 cl , 210 dl , 210 els , 210 ff ) is finally cleaned of the space of the substrate G (that is, the inside of the first processing container 1 〇〇) In the case of cleaning, the organic material contained in the source 2 l〇a~21 〇f can be avoided by blocking the space of the cleaned emptying organic material with each valve 300. In the cleaning, it is chemically deteriorated with the clean gas. When the conditions are complete, the cleaning device cleans the ITO surface of the substrate G in the first processing container 1 (finally clean). This is the ultimate cleansing tool. Cleaning ITO's in the pre-treatment chamber CM' As shown in FIG. 1, when the conveying arm Arm by the group from the process vessel to the processing chamber PMI conveyance CM, Shen present in the transfer gate valve 150 and other contaminants will again adhere to the〗 τ square surface.
Arm 處理 被搬 電源 藉由 120 被關 a 1、 被與 空間 間與 蒸鍍 反應 內清 有如 表面 板G 運室 -23· 200840113 於此污染物附著之狀態下，如於ITO上形成電洞輸送 層（第2層之有機膜）時，基於附著於ΙΤΟ上的污染物， ΙΤΟ與電洞輸送層之密接性變差，能量界面控制性變差， 因而能量障壁變高。此結果，功函數變小，電洞注入性能 降低，有機Ε元件的發光強度（亮度）降低。因此，於關 於本實施形態之基板處理裝置10中，於ΙΤΟ上形成有機 層之前，於與形成有機層的處理容器相同的處理容器ΡΜ 中，對ΙΤΟ表面實施最終潔淨處理。 另外，最終潔淨時，從氣體供給源1 20g所供給的潔 淨氣體，只要包含：氧氣氣體、氟氣體、氯氣體、氧氣氣 體化合物、氟氣體化合物、氯氣體化合物之其中一種即可 。藉由此游離基的作用，使污染物化學反應，來使污染物 從基板G的表面脫離，並藉由從處理容器內排出外部，從 基板G的表面除去污染物，藉此，可以清潔基板g的表 面成爲光滑的狀態爲止。 例如’在潔淨氣體使用氧氣氣體的情形時，污染物與 氧氣游離基化學反應，而成爲CO或C〇2。如此所產生的 CO或C〇2，從基板G的表面脫離，並從處理容器內被排 出外部。藉此’從基板G的IT 0表面除去污染物，可以使 ITO表面成爲光滑的狀態。 (有機層形成） 最終潔淨結束後’於基板G形成電洞輸送層之前，藉 由將全部的閥門3 00a〜3 00f打開，收容了有機材料之空 -24- 200840113 間與實行薄膜形成處理的第1處理容器1 00的內部空間相 互連通。 之後，藉由使滑動構件1 2 0 5滑動，使基板G移動至 吹出機構1 3 0 a的開口的正上方，使收容於蒸鍍源2 1 0 a的 收容部21 Oal之有機材料氣化，使已氣化的有機分子介由 連接管160a而從吹出口 130a的開口被吹出，而蒸鍍於基 板G的ITO表面。藉此，於ITO表面形成電洞輸送層（ 有機膜（1 ))。 進而，藉由使滑動機構1 10滑動，依吹出機構130b〜 吹出機構1 3 Of之順序，以特定的速度移動至各吹出機構 130b〜130f之稍微上方。藉此，藉由從各吹出機構 13 Ob〜13 Of所個別吹出的有機材料，從第3圖所示之第2 層至第6層之有機膜被層積於基板G之第1層之電洞輸送 層上。 如以上說明般，如依據關於本實施形態之基板處理裝 置1 〇，於基板G形成有機膜之蒸鍍裝置的吹出機構1 3 0 與清潔基板G之潔淨裝置，係設置於同一處理容器PM1 內。藉此，可以在清潔後，沒有污染物附著，於光滑的基 板G的ITO的表面即刻形成電洞輸送層。 藉此，可以使基板G的ITO表面與電洞輸送層的密接 性實體性地提高。藉此，可使能量界面控制性變好，能使 移動於IΤ Ο與電洞輸送層之間的電洞的能量障壁降低。藉 此，可以使功函數變大，藉由使電洞注入性能提高，能夠 將有機EL元件的發光強度維持在高強度。如此，可以製 -25- 200840113 造發光強度高，且消耗電力低的有機EL元件。 進而，如本實施形態般，於電漿處理裝置之情形時， 藉由包含於電漿中的離子進入基板G的ITO的表層，ITO 的表層有被改質的可能性。在此情形時，藉由被摻雜於 ITO表層的離子之作用，使ITO表層的特性改變，能夠使 移動於ITO與電洞輸送層之間的電洞的能量障壁更降低。 此結果，藉由使得功函數變得更大，進一步改善電洞注入 性能，可以製造一面抑制消耗電力，一面得以長期地維持 高的發光強度之有機EL元件。 除此之外，於基板處理裝置1 0設置有藉由開關將清 潔基板G之空間與收容有機材料的空間予以遮斷或連通之 閥門3 00。藉此，在清潔之際，可以將關閉閥門300來進 行清潔之空間與收容有機材料之空間予以遮斷，此結果， 可以避免收容於蒸鍍源2 1 0之收容部的有機材料，於清潔 中與潔淨氣體化學反應而劣化。 進而，如依據關於本實施形態之基板處理裝置1 0，在 使用潔淨裝置來清潔基板G之ITO表面時，也可以清潔第 1處理容器100的內壁或安裝於第1處理容器100的各零 件。此結果，可以使第1處理容器1 〇 〇的維護週期變長。 (實驗） 發明人使用前述潔淨裝置之一例的UV臭氧潔淨器， 於大氣中進行藉由以上說明之最終潔淨，污染物幾乎從基 板G的ITO表面被除去之實驗。 -26- 200840113 發明人係一面供給壓力0.02MPa、流量1〜lOsccm之 〇2氣體，一面照射5分鐘UV光來作爲藉由UV臭氧潔淨 器之UV臭氧清潔處理時間。另外，發明人係將壓力 0.02MPa、流量1〜lOsccm之N2沖洗氣體流入處理容器 PM1內共2分鐘，來作爲UV臭氧排氣時間。另外，發明 人係使用於厚度10nm、大小200mmx200mm之Si〇2基板 上層積厚度150nm之ITO的基板G。 使用所使用的接觸角（潤濕角）的測定位置，係於第 4圖的a點〜i點。另外，在此實驗結果之中，從基板G的 長度20 0mm的兩端起各l〇mm，實際上係不當成產品來使 用的部分。因此，在以下說明之全部的實驗資料中，係矚 目於形成在從矽晶圓的中心起距離± 9 0 m m之範圍內之膜的 狀態，第6圖中，省略從矽晶圓的長度200mm之兩端起 1 0 m m內的資料。 另外，所謂接觸角（潤濕角），係指如第5圖所示般 ，基板G上的ITO表面與存在於ITO表面的液體（水分h )的表面所接觸的角度。第5圖的左側所示之接觸角爲90 〜100°，第5圖的右側所示的接觸角爲10°。接觸角變小 ，則存在於ITO表面的污染物變少，表示ITO表面爲光滑 的狀態。 (實驗結果） 在第6圖所示之實驗結果中，表示於工作台與Si02 基板之間有間隔物之情形與沒有間隔物之情形。由實驗結 -27- 200840113 果得知，基於前述條件，於已清潔ITO表面的情形時，和 沒有清潔ΙΤΟ表面的情形相比，接觸角於位置a〜位置i之 任一位置中，都約小1位數，並未受到間隔物之有無所左 右。 由第6圖所示實驗的結果，發明人確認到，在已清潔 ITO表面之情形時，可以使ITO表面與電洞輸送層的密接 性成爲非常地高。此結果，可以證明：藉由關於本實施形 態之潔淨裝置，清潔基板G的ITO表面直到成爲光滑狀態 爲止，可使功函數變大，得以進一步改善電洞注入性能， 爲了製造一面抑制消耗電力，一面可以長期地維持高的發 光強度的有機EL元件，係極爲重要，及爲了有效地提高 ITO與電洞輸送層的密接度，關於本實施形態的基板處理 裝置1 0的構成，係屬非常有效。 以上實驗，係如前述般在大氣中進行。但是，發明人 思考過，在處理容器10的內部壓力爲數百mmTorr〜ITorr 、氣體流量爲1 000 seem〜2 000 seem之真空狀態中，可以獲 得與大氣中的前述實驗結果同樣或比其更好的效果。原因 何在呢？此係存在於真空中的分子之數目，和存在於大氣 中的分子之數目相比顯著地少。即在真空中，與大氣中相 比，污染物少。因此，一般而言，在污染物少的真空中， 比污染物多的大氣中之前述實驗結果，推測污染物附著於 基板G之機率更低。基於此種理由，發明人得以論證得知 ，在真空狀態下，藉由前述方法來清潔ITO表面之情形時 ，ITO表面與電洞輸送層之密接性可以成爲非常地高，能 -28- 200840113 量的界面控制性可以顯著提高。 (第2實施形態） 接著，說明關於第2實施形態之基板處理裝置1 0。於 關於第2實施形態之基板處理裝置1 〇中，於處理容器 PM1所形成的有機膜只有電洞輸送層之一層，此點與於處 理容器PM 1中形成複數層的有機膜之第1實施形態的基 板處理裝置1 〇，在構造上不同。因此，以此不同點爲中心 ，一面參照第7〜第9圖來說明關於本實施形態之基板處 理裝置1 0。 如第7圖所示般，關於第2實施形態之基板處理裝置 1 0，雖與關於第1實施形態之基板處理裝置1 〇基本構造 相同，但是具有6個處理容器PM，於各處理容器PM1〜 PM6各形成一層之第3圖所示的6層之有機層（有機層（ 1 )〜（6 ))。 (處理容器PM1 ) 於處理容器PM 1中，進行最終潔淨及電洞輸送層之 薄膜形成。處理容器Ρ Μ 1係立方體形狀，設置於其內部 之滑動機構1 1 〇、潔淨裝置，係與第1實施形態相同的構 成。但是，於第2實施形態中，蒸鍍源21 0係只有丨個內 藏於處理容器PM1。即於處理容器PM1中，蒸鍍源210 與潔淨裝置一同地只有1個內藏著。因此，在第2實施形 態中’具有收容部2 1 0 a與開口，使收容於收容部2 1 〇 a之 -29- 200840113 有機材料氣化，使已氣化的有機材料從開口吹出之蒸鍍源 2 1 0本身，係相當於蒸鍍裝置。 另外，第2實施形態中，遮斷機構爲擋門2 2 0之點， 與遮斷機構爲閥門3 00a (參照第2圖）之第1實施形態不 同。擋門220係設置爲可以使設置於蒸鍍源2 1 0的上部中 央之開口開關，藉由開關，來使清潔基板G之空間（處理 容器PM 1的空間）從收容有機材料之空間（收容部2 1 0a 的空間）遮斷或連通。另外，擋門2 2 0係相當於藉由開關 來將設置於蒸鍍源2 1 0的上部中央之開口開關的蓋體。 爲了提高藉由擋門220使得收容有有機材料之空間從 進行清潔的空間被遮斷時之密閉性，於蒸鍍源2 1 0的上部 開口之周緣設置有〇型環23 0。 在第2實施形態中，首先如第9圖之左側所示般，擋 門220係以關閉蒸鍍源2 1 0之開口的方式，密接設置於蒸 鍍源2 1 0的上面。如此，有機材料從潔淨氣體被遮斷。此 時，於蒸鍍源2 1 0的開口周緣設置有0型環2 3 0，可以將 有機材料更有效地從潔淨氣體予以遮斷。藉此，可以確實 地防止有機材料因潔淨氣體而劣化。 之後，藉由潔淨裝置，基板G的ITO表面被最終潔淨 。最終潔淨後，第8圖的滑動機構1 1 0滑動至使基板G位 於蒸鍍源21 0的正上方。另外，擋門220係如第9圖的中 央所示般，首先，往上移動，進而，如第9圖的右側所示 般，橫向滑動。 如此藉由開放蒸鍍源2 1 0的開口，有機氣化分子從蒸 -30- 200840113 鍍源2 1 0被吹出。然後，藉由此有機分子，於最 的ΙΤΟ表面形成電洞輸送層（有機膜（1))。Arm processing is carried out by the power supply by 120. A is separated from the space and the vapor deposition reaction is as if the surface plate G is transported to the chamber -23· 200840113, and the contaminant is attached to the ITO. In the case of the layer (the organic film of the second layer), the adhesion between the crucible and the hole transport layer is deteriorated based on the contaminants adhering to the crucible, and the energy interface controllability is deteriorated, so that the energy barrier becomes high. As a result, the work function becomes small, the hole injection performance is lowered, and the luminous intensity (brightness) of the organic germanium element is lowered. Therefore, in the substrate processing apparatus 10 of the present embodiment, before the organic layer is formed on the crucible, the surface of the crucible is subjected to final cleaning treatment in the same processing container crucible as the processing container in which the organic layer is formed. In the final cleaning, the clean gas supplied from the gas supply source 20g may include one of oxygen gas, fluorine gas, chlorine gas, oxygen gas compound, fluorine gas compound, and chlorine gas compound. By the action of the radical, the contaminant is chemically reacted to detach the contaminant from the surface of the substrate G, and the contaminant is removed from the surface of the substrate G by discharging the outside from the processing container, whereby the substrate can be cleaned. The surface of g is in a smooth state. For example, when a clean gas uses oxygen gas, the pollutant chemically reacts with the oxygen radical to become CO or C〇2. The CO or C?2 thus generated is separated from the surface of the substrate G and discharged from the inside of the processing container. By this, the contaminants are removed from the surface of the IT 0 of the substrate G, and the surface of the ITO can be made smooth. (Organic layer formation) After the final cleaning is completed, before the formation of the hole transport layer on the substrate G, by opening all the valves 300a to 300f, the organic material is accommodated in the space -24-200840113 and the film formation process is performed. The internal spaces of the first processing container 100 are in communication with each other. Thereafter, by sliding the sliding member 1 250, the substrate G is moved right above the opening of the blowing mechanism 1 30 a, and the organic material contained in the housing portion 21 Oal of the vapor deposition source 2 1 0 a is vaporized. The vaporized organic molecules are blown out from the opening of the air outlet 130a via the connection pipe 160a, and are vapor-deposited on the surface of the ITO of the substrate G. Thereby, a hole transport layer (organic film (1)) was formed on the surface of the ITO. Further, by sliding the slide mechanism 110, the blowing mechanism 130b to the blowing mechanism 1 3 Of are moved to a slightly higher speed of the respective blowing mechanisms 130b to 130f at a specific speed. Thereby, the organic film of the second layer to the sixth layer shown in FIG. 3 is laminated on the first layer of the substrate G by the organic material blown out from each of the blowing mechanisms 13 Ob to 13 Of. On the hole transport layer. As described above, according to the substrate processing apparatus 1 of the present embodiment, the cleaning means 1 3 0 of the vapor deposition device forming the organic film on the substrate G and the cleaning device for cleaning the substrate G are disposed in the same processing container PM1. . Thereby, the hole transporting layer can be formed on the surface of the ITO of the smooth substrate G immediately after cleaning without contamination. Thereby, the adhesion between the ITO surface of the substrate G and the hole transport layer can be substantially improved. Thereby, the energy interface controllability can be improved, and the energy barrier of the hole moving between the I Τ and the hole transport layer can be lowered. As a result, the work function can be made larger, and the luminous intensity of the organic EL element can be maintained at a high intensity by improving the hole injection performance. In this way, it is possible to manufacture an organic EL element having a high luminous intensity and low power consumption from -25 to 200840113. Further, as in the case of the plasma processing apparatus, when the ions contained in the plasma enter the surface layer of the ITO of the substrate G, the surface layer of the ITO may be modified. In this case, by changing the characteristics of the ITO surface layer by the action of ions doped on the ITO surface layer, the energy barrier of the hole moving between the ITO and the hole transport layer can be further reduced. As a result, by making the work function larger and further improving the hole injection performance, it is possible to manufacture an organic EL element which can maintain high luminous intensity while suppressing power consumption for a long period of time. In addition, the substrate processing apparatus 10 is provided with a valve 300 for blocking or communicating the space of the cleaning substrate G and the space for accommodating the organic material by a switch. Thereby, at the time of cleaning, the space for closing the valve 300 and the space for accommodating the organic material can be blocked, and as a result, the organic material contained in the accommodating portion of the vapor deposition source 2 10 can be prevented from being cleaned. It deteriorates due to chemical reaction with clean gas. Further, according to the substrate processing apparatus 10 of the present embodiment, when the ITO surface of the substrate G is cleaned by using the cleaning device, the inner wall of the first processing container 100 or the components attached to the first processing container 100 may be cleaned. . As a result, the maintenance cycle of the first processing container 1 can be lengthened. (Experiment) The inventors conducted an experiment in which the contaminant was almost removed from the ITO surface of the substrate G by the above-described final cleaning by using a UV ozone cleaner which is an example of the above-described cleaning apparatus. -26- 200840113 The inventor supplied UV gas for 5 minutes while supplying 〇2 gas having a pressure of 0.02 MPa and a flow rate of 1 to 10 sccm as a UV ozone cleaning treatment time by a UV ozone cleaner. Further, the inventors flowed N2 flushing gas having a pressure of 0.02 MPa and a flow rate of 1 to 10 sccm into the processing container PM1 for 2 minutes to obtain a UV ozone exhaust time. Further, the inventors used a substrate G in which ITO having a thickness of 150 nm was laminated on a Si 2 substrate having a thickness of 10 nm and a size of 200 mm x 200 mm. The measurement position of the contact angle (wetting angle) used is the point a to point i in Fig. 4 . Further, among the results of this experiment, each of 10 mm from the both ends of the length of the substrate G of 20 mm was actually used as a portion for use as a product. Therefore, in all the experimental materials described below, the state of the film formed in the range of ±90 mm from the center of the germanium wafer is noted, and in FIG. 6, the length from the germanium wafer is omitted by 200 mm. The data from both ends is within 10 mm. Further, the contact angle (wetting angle) means an angle at which the surface of the ITO on the substrate G is in contact with the surface of the liquid (moisture h) present on the surface of the ITO as shown in Fig. 5. The contact angle shown on the left side of Fig. 5 is 90 to 100°, and the contact angle shown on the right side of Fig. 5 is 10°. When the contact angle becomes small, the amount of contaminants present on the surface of the ITO becomes small, indicating that the surface of the ITO is in a smooth state. (Experimental results) In the experimental results shown in Fig. 6, the case where there is a spacer between the stage and the SiO 2 substrate and the case where there is no spacer are shown. From the results of the experimental results -27-200840113, it is known that, based on the foregoing conditions, in the case where the surface of the ITO has been cleaned, the contact angle is in any position from the position a to the position i as compared with the case where the surface of the crucible is not cleaned. The small one-digit number is not affected by the presence or absence of spacers. As a result of the experiment shown in Fig. 6, the inventors confirmed that the adhesion between the ITO surface and the hole transport layer can be made extremely high when the surface of the ITO has been cleaned. As a result, it has been confirmed that the surface of the ITO of the substrate G can be cleaned until the surface of the ITO of the substrate G is cleaned by the cleaning device of the present embodiment, and the work function can be further improved, and the hole injection performance can be further improved. The organic EL device which can maintain a high luminous intensity for a long period of time is extremely important, and the structure of the substrate processing apparatus 10 of the present embodiment is very effective in order to effectively improve the adhesion between the ITO and the hole transport layer. . The above experiment was carried out in the atmosphere as described above. However, the inventors thought that in the vacuum state in which the internal pressure of the processing vessel 10 is several hundred mmTorr to ITorr and the gas flow rate is 1 000 seem to 2 000 seem, it is possible to obtain the same or more than the aforementioned experimental results in the atmosphere. Good results. What is the reason? The number of molecules present in the vacuum is significantly less than the number of molecules present in the atmosphere. That is, in a vacuum, there is less pollutant than in the atmosphere. Therefore, in general, in the vacuum with less contaminants, the above experimental results in the atmosphere more than the contaminants, it is presumed that the probability of the contaminants adhering to the substrate G is lower. For this reason, the inventors have demonstrated that the adhesion of the ITO surface to the hole transport layer can be extremely high when the ITO surface is cleaned by the aforementioned method under vacuum, and can be -28-200840113 The amount of interface control can be significantly improved. (Second Embodiment) Next, a substrate processing apparatus 10 according to a second embodiment will be described. In the substrate processing apparatus 1 of the second embodiment, the organic film formed in the processing chamber PM1 has only one layer of the hole transporting layer, and the first embodiment of forming an organic film of a plurality of layers in the processing container PM1 is performed. The substrate processing apparatus 1 of the form differs in structure. Therefore, the substrate processing apparatus 10 according to the present embodiment will be described with reference to Figs. 7 to 9 centering on the difference. As shown in Fig. 7, the substrate processing apparatus 10 of the second embodiment has the same basic structure as the substrate processing apparatus 1 of the first embodiment, but has six processing containers PM in each processing container PM1. ~ PM6 each form a 6-layer organic layer (organic layer (1)~(6)) as shown in Fig. 3 of the layer. (Processing Container PM1) In the processing container PM1, film formation of the final cleaning and hole transporting layer is performed. The processing container Ρ 1 has a cubic shape, and the sliding mechanism 1 1 〇 and the cleaning device provided inside the same structure are the same as those of the first embodiment. However, in the second embodiment, only one of the vapor deposition sources 210 is contained in the processing container PM1. That is, in the processing container PM1, only one of the vapor deposition source 210 is contained in the same manner as the cleaning device. Therefore, in the second embodiment, the organic material of the -29-200840113 which is accommodated in the accommodating portion 2 1 〇a is vaporized by the accommodating portion 2 1 0 a and the opening, and the vaporized organic material is blown out from the opening. The plating source 2 1 0 itself is equivalent to a vapor deposition device. Further, in the second embodiment, the shutoff mechanism is a point that blocks the door 220, and is different from the first embodiment in which the shutoff mechanism is the valve 300a (see Fig. 2). The shutter 220 is provided so that the opening switch provided at the upper center of the vapor deposition source 210 can be used to open the space of the cleaning substrate G (the space of the processing container PM 1) from the space for accommodating the organic material (accommodating The space of part 2 1 0a is blocked or connected. Further, the shutter 2 208 is a cover corresponding to an opening switch provided at the center of the upper portion of the vapor deposition source 210 by a switch. In order to improve the airtightness when the space in which the organic material is accommodated is blocked by the shutter 220, the 〇-shaped ring 230 is provided on the periphery of the upper opening of the vapor deposition source 210. In the second embodiment, first, as shown on the left side of Fig. 9, the shutter 220 is closely attached to the upper surface of the vapor deposition source 210 by closing the opening of the vapor deposition source 210. Thus, the organic material is blocked from the clean gas. At this time, the 0-ring 2300 is provided on the periphery of the opening of the vapor deposition source 210, and the organic material can be more effectively blocked from the clean gas. Thereby, it is possible to surely prevent the organic material from being deteriorated by the clean gas. Thereafter, the ITO surface of the substrate G is finally cleaned by a cleaning device. After the final cleaning, the sliding mechanism 110 of Fig. 8 is slid so that the substrate G is positioned directly above the vapor deposition source 210. Further, as shown in the center of Fig. 9, the shutter 220 is first moved upward, and further, laterally, as shown on the right side of Fig. 9. Thus, by opening the opening of the evaporation source 210, the organic gasification molecules are blown out from the evaporation source -30-200840113 plating source 2 1 0. Then, by this organic molecule, a hole transport layer (organic film (1)) is formed on the most surface of the crucible.
如以上說明般’於關於第2實施形態之基板 10中，藉由擋門220，可以一方面避免收容於蒸 之有機材料在潔淨中與潔淨氣體化學反應而劣化 效地提高基板G的ΙΤΟ表面與電洞輸送層的密接 果，可以製造發光強度高、消耗電力低的有機EL (第3實施形態） 接著，說明關於第3實施形態之基板處理裝| 關於第3實施形態之基板處理裝置1 〇中，如第i 般，蒸鍍源210a〜21 Of及閥門3 00a〜3 OOf被內藏 機薄膜形成處理的第1處理容器1 〇 〇與別的真空 (第2處理容器200)之點，與只有蒸鍍源210a 內藏於第2處理容器200，閥門300a〜300f開放 統之第1實施形態的基板處理裝置1 〇，其構造上: 如依據本實施形態，不單蒸鍍源2 1 0，閥門 內藏於第2處理容器200。藉此，在第2實施形 將閥門3 00配置於大氣壓下之第1實施形態的情 可以防止通過空氣中將閥門3 00的熱釋放於外部 可以防止被氣化的有機分子例如於連接管1 6 0析 出機構1 3 0所供給的氣體分子量減少，蒸鍍速度|S 另外，在本實施形態中，與第1實施形態相 蒸鍍源210的第2處理容器200與於基板G形成 終潔淨後 處理裝置 鍍源2 2 0 ，一面有 性。此結 元件。 置10。於 〇圖所示 於實行有 處理容器 卜210f被 於大氣系 不同。 3 00也被 態中，與 形相比， 。藉此， 出，從吹 ，低。 同，內藏 有機膜之 -31 - 200840113 第1處理容器1 0 0爲個別設置。藉此，在補充有機材料時 ’只要將內藏有蒸鍍源210之第2處理容器200開放於大 氣系統即可，不需要將進行有機薄膜形成處理之第丨處理 容器1 〇 0開放於大氣系統。藉此，可以使排氣效率提升。 另外，於補充有機材料時，不需要將進行處理的處理容器 開放於大氣，與將容器整體開放於大氣之以往者相比，可 以縮短將容器內減壓至特定的真空度的時間。藉此，可以 使產出率提升，得以提高產品的生產性。 如以上說明般，如依據第1〜第3實施形態之基板處 理裝置1 0，可以不使有機材料劣化，密接於基板G的IT0 表面來形成有機膜。 另外，於各實施形態所說明的處理容器PM 1中，於 潔淨裝置與蒸鍍裝置（吹出機構1 3 0或蒸鍍源2 1 0 )之間 ，也可以設置隔開設置有潔淨裝置之空間與設置有蒸鍍裝 置的空間之可動式的隔間。隔間係於潔淨時，將設置有潔 淨裝置的空間與設置有蒸鍍裝置的空間予以遮斷，於有機 膜形成時，使兩空間連通。如依據此，可以不設置閥門 3 00或擋門220，不會使有機材料劣化，能密接於ITO表 面而形成有機膜。 可以於以上說明的各處理容器PM進行薄膜形成處理 之基板G的尺寸，爲730mmx920mm以上。例如，處理容 器PM可以對 73 0mmx920mm (腔體內的直徑爲lOOOmmx 1190mm)的 G4.5 基板尺寸，或 1100mmxl 3 00mm (腔體 內的直徑爲1 470mmxl 590mm)的G5基板尺寸進行薄膜形 -32- 200840113 成處理。 另外，各處理容器PM也可以對直徑例如200mm或 3 0 0mm之晶圓進行薄膜形成處理。即被施以薄膜形成處理 之被處理體，並不限定爲玻璃基板，也可以是矽晶圓。 於前述實施形態中，各部的動作爲相互關連，可以一 面考慮相互的關連性，一面作爲一連串的動作而予以置換 。然後，藉由如此予以置換，可以將基板處理裝置的發明 之實施形態當成使用基板處理裝置來清潔被處理體的方法 之實施形態。 以上，雖一面參照所附圖面一面說明本發明之合適的 實施形態，但是，不用說本發明並不限定於上述例子。如 係該行業者，於申請專利範圍所記載的範疇內，顯然可以 想得到各種的變更例或修正例，可以瞭解到，關於此等例 子，當然也屬於本發明的技術範圍。 例如，關於本發明之基板處理裝置，可以不是如前述 之群集型的裝置，例如也可以將只由處理容器PM 1所構 成的裝置當成基板處理裝置。 另外，於前述的實施形態中，作爲潔淨裝置之電漿處 理裝置的一例，係舉平行平板型的電漿處理裝置來說明。 但是，作爲本發明之潔淨裝置，並不限定於此，例如也可 以是：ICP ( Inductive Coupling Plasma :感應耦ί 合電漿） 型電漿處理裝置、磁控管型電漿處理裝置、ECR ( Electron Cyclotron Resonance:電子迴旋諧振器）型電獎 處理裝置、螺旋形極化天線（helicon)波型電漿處理裝置 -33- 200840113 、表面波（SWP: Surface Wave Plasma、CMEP: Cellular Microwave Excitation Plasma)型電漿處理裝置、RLSA ( Radial Line SlotAntenna :徑向直線槽形天線（型電漿處 理裝置。 另外，於前述之實施形態中，作爲潔淨裝置之光學洗 淨裝置的一例，雖舉UV臭氧潔淨器，但是，並不限定於 此，例如也可以是紅外（IR )燈、準分子燈。 另外，關於第2實施形態之擋門220，係以可以開關 蒸鍍源2 1 0的上部開口之方式所設置。但是，設置擋門 220的位置，並不限定於此，例如也可以開關設置於各吹 出機構1 3 0的開口之方式來設置。 另外’例如於前述各實施形態之基板處理裝置1 〇中 ’薄膜形成材料爲使用粉體（固體）的有機EL材料，於 基板G上施以有機EL多層薄膜形成處理。但是，關於本 發明之基板處理裝置’例如也可以使用於薄膜形成材料主 要使用液體的有機金屬，使已氣化的薄膜形成材料分解於 被加熱爲5 00〜70(rc之被處理體上，藉此，於被處理體上 形成薄膜之 MOCVD ( Metal Organic Chemical Vapor Deposition ·有機亞屬氣相沈積法）。如此，關於本發明 之基板處理裝置，可以作爲將有機EL薄膜形成材料或有 機金屬薄形成材料當成原料，藉由蒸鍍於被處理體形成 有機EL膜或有機金屬膜之裝置來使用。 【圖式簡單說明】 -34- 200840113 第1圖係表示關於本發明之第1及第3實施型態的基 板處理裝置之平面圖。 第2圖係關於第1實施型態之處理容器PM 1的縱剖 面圖。 第3圖係用以說明藉由各實施型態之6層連續薄膜形 成處理所層積之各膜圖。 第4圖係表示實驗時之基板的測定位置圖。 第5圖係用已說明接觸角的定義圖。 第6圖係表示接觸角之實驗結果圖。 第7圖係表示關於本發明之第2實施型態的基板處理 裝置之平面圖。 第8圖係關於第2實施型態之處理容器PM 1的縱剖 面圖。 第9圖係用以說明第2實施型態之擋門的動作圖。 第1 0圖係關於第3實施型態之處理容器PM 1的縱剖 面圖。 第1 1圖係表示相關連之群集型的有機薄膜形成裝置 的平面圖。 第1 2圖係相關連之有機薄膜形成裝置的縱剖面圖。 【主要元件符號說明】 1 〇 :基板處理裝置 LLM :裝載閉鎖室 TM :搬運室 -35- 200840113 c Μ :前處理室 PM :處理容器 G :基板 100 :第1處理容器 1 1 0 :滑動機構 120 :電漿處理裝置 122 : UV潔淨器 124 :遙控電漿 130a〜130f :吹出機構 1 4 0 :隔壁 1 5 0 :閘門閥 200 :第2處理容器 210a〜210f :蒸鍍源 3 0 0 :閥門 -36As described above, in the substrate 10 of the second embodiment, by blocking the door 220, it is possible to prevent the organic material contained in the vapor from chemically reacting with the clean gas during cleaning to deteriorate the surface of the substrate G. In the case of the adhesion to the hole transport layer, the organic EL having high luminous intensity and low power consumption can be produced. (Third Embodiment) Next, the substrate processing apparatus according to the third embodiment will be described. In the middle, as in the case of i, the vapor deposition sources 210a to 21 Of and the valves 3 00a to 3 OOf are treated by the built-in film forming process of the first processing container 1 〇〇 and the other vacuum (the second processing container 200) The substrate processing apparatus 1 according to the first embodiment in which only the vapor deposition source 210a is housed in the second processing container 200 and the valves 300a to 300f are open, the structure is as follows: According to the embodiment, not only the vapor deposition source 2 1 0, the valve is housed in the second processing container 200. Therefore, in the first embodiment in which the valve 300 is placed under the atmospheric pressure in the second embodiment, it is possible to prevent the organic molecules that are vaporized from being released from the outside by the air in the air, for example, in the connecting pipe 1. In the present embodiment, the second processing container 200 of the vapor deposition source 210 of the first embodiment and the substrate G are finally cleaned. The post-treatment device is plated with 2 2 0 and has a side. This knot component. Set 10. As shown in the figure, there is a processing container. The 210f is different in the atmosphere. 3 00 is also in the state, compared with the shape. By this, out, from blowing, low. Same as the built-in organic film -31 - 200840113 The first processing container 1 0 0 is an individual setting. Therefore, when the organic material is replenished, the second processing container 200 in which the vapor deposition source 210 is contained may be opened to the atmosphere system, and it is not necessary to open the second processing container 1 〇0 for performing the organic thin film formation treatment to the atmosphere. system. Thereby, the exhaust efficiency can be improved. Further, when the organic material is replenished, it is not necessary to open the processing container for processing to the atmosphere, and the time for decompressing the inside of the container to a specific degree of vacuum can be shortened as compared with the case where the entire container is opened to the atmosphere. In this way, the output rate can be increased and the productivity of the product can be improved. As described above, according to the substrate processing apparatus 10 of the first to third embodiments, the organic film can be formed by adhering to the surface of the IT0 of the substrate G without deteriorating the organic material. Further, in the processing container PM1 described in each of the embodiments, a space in which the cleaning device is provided may be provided between the cleaning device and the vapor deposition device (the blowing mechanism 130 or the vapor deposition source 2 1 0). A movable compartment with a space in which the vapor deposition device is installed. When the compartment is clean, the space in which the cleaning device is installed and the space in which the vapor deposition device is installed are blocked, and when the organic film is formed, the two spaces are communicated. According to this, the valve 300 or the shutter 220 can be omitted, and the organic material can be prevented from being inferior to the ITO surface to form an organic film. The size of the substrate G which can be subjected to the film formation treatment in each of the processing containers PM described above is 730 mm x 920 mm or more. For example, the processing container PM can be formed into a film shape of a G4.5 substrate size of 73 0 mm x 920 mm (100 mm diameter x 1190 mm in the cavity) or a G5 substrate size of 1100 mm x 13 mm (1 470 mm x 590 mm in the cavity) -32-200840113 Processing. Further, each of the processing containers PM may be subjected to a film forming process on a wafer having a diameter of, for example, 200 mm or 300 mm. That is, the object to be processed subjected to the film formation treatment is not limited to a glass substrate, and may be a tantalum wafer. In the above embodiment, the operations of the respective units are related to each other, and the correlation between them can be considered as a series of operations. Then, by substituting in this way, an embodiment of the invention of the substrate processing apparatus can be regarded as an embodiment of a method of cleaning the object to be processed using the substrate processing apparatus. Although the preferred embodiments of the present invention have been described above with reference to the drawings, it is needless to say that the present invention is not limited to the above examples. It is obvious that various modifications and alterations can be made in the scope of the patent application, and it is understood that these examples are of course within the technical scope of the present invention. For example, the substrate processing apparatus of the present invention may not be a cluster type device as described above, and for example, a device composed only of the processing container PM 1 may be a substrate processing device. Further, in the above-described embodiment, an example of the plasma processing apparatus of the cleaning apparatus will be described with reference to a parallel plate type plasma processing apparatus. However, the cleaning apparatus of the present invention is not limited thereto, and may be, for example, an ICP (Inductive Coupling Plasma) type plasma processing apparatus, a magnetron type plasma processing apparatus, or an ECR ( Electron Cyclotron Resonance: Electron Cyclotron Resonator, Helicon Wave Plasma Treatment Device -33- 200840113, Surface Wave Plasma, CMEP: Cellular Microwave Excitation Plasma Type plasma processing apparatus, RLSA (radial line slot antenna) (type plasma processing apparatus. In addition, in the above embodiment, as an example of an optical cleaning apparatus of a cleaning apparatus, UV ozone is cleaned. The present invention is not limited thereto, and may be, for example, an infrared (IR) lamp or an excimer lamp. Further, the shutter 220 of the second embodiment is capable of switching the upper opening of the vapor deposition source 2 10 . Although the position of the shutter 220 is not limited to this, for example, it may be set such that the opening of each of the blowing mechanisms 1 30 is opened and closed. Further, for example, in the substrate processing apparatus 1 of the above-described respective embodiments, the thin film forming material is an organic EL material using a powder (solid), and the organic EL multilayer thin film forming treatment is applied to the substrate G. However, the present invention is The substrate processing apparatus can be used, for example, in an organic metal in which a film forming material mainly uses a liquid, and the vaporized film forming material is decomposed into a body to be heated to be 500 to 70 (rc), whereby In the substrate processing apparatus of the present invention, the organic EL thin film forming material or the organic metal thin forming material can be used as a raw material. The apparatus for forming an organic EL film or an organic metal film by vapor deposition on a target object is used. [Brief Description] -34- 200840113 Fig. 1 shows a substrate according to the first and third embodiments of the present invention. Fig. 2 is a longitudinal sectional view of a processing container PM1 of the first embodiment. Fig. 3 is for explaining Fig. 4 is a view showing the measurement position of the substrate during the experiment. Fig. 4 is a diagram showing the definition of the contact angle. Fig. 6 shows the definition of the contact angle. Fig. 7 is a plan view showing a substrate processing apparatus according to a second embodiment of the present invention. Fig. 8 is a longitudinal sectional view showing a processing container PM 1 of the second embodiment. Fig. 9 is a view for explaining the operation of the door of the second embodiment. Fig. 10 is a longitudinal sectional view showing a processing container PM 1 of the third embodiment. Fig. 1 is a plan view showing the associated cluster type organic thin film forming apparatus. Fig. 12 is a longitudinal sectional view of the associated organic thin film forming apparatus. [Description of main component symbols] 1 〇: Substrate processing apparatus LLM: Loading lock chamber TM: Transfer chamber -35- 200840113 c Μ : Pretreatment chamber PM: Processing container G: Substrate 100: First processing container 1 1 0 : Sliding mechanism 120: plasma processing apparatus 122: UV cleaner 124: remote control plasma 130a to 130f: blowing mechanism 1 40: partition 1 150: gate valve 200: second processing container 210a to 210f: vapor deposition source 3 0 0: Valve-36