JP2004192858A - Washing method for organic el device manufacturing apparatus, and manufacturing method of organic el device - Google Patents

Washing method for organic el device manufacturing apparatus, and manufacturing method of organic el device Download PDF

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JP2004192858A
JP2004192858A JP2002356912A JP2002356912A JP2004192858A JP 2004192858 A JP2004192858 A JP 2004192858A JP 2002356912 A JP2002356912 A JP 2002356912A JP 2002356912 A JP2002356912 A JP 2002356912A JP 2004192858 A JP2004192858 A JP 2004192858A
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organic
chamber
transfer chamber
hole injection
organic film
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JP4139205B2 (en
Inventor
Natsuki Takahashi
夏木 高橋
Koichi Sakasegawa
浩一 逆瀬川
Takeshi Igarashi
武 五十嵐
Yasuki Nishinobo
泰樹 西ノ坊
Masahiko Otomo
政彦 大友
Osamu Irisawa
修 入澤
Kazuo Yamada
和男 山田
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Ulvac Inc
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Ulvac Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for stably manufacturing a high quality organic EL device by evenly forming an organic layer on a surface of an electron hole injection electrode of a substrate formed with the electrode on a surface. <P>SOLUTION: An interior of a conveyance chamber is washed by ozone gas by utilizing time for replacing a deposition source to a new deposition source set in an interior of an organic film forming chamber of the organic EL device manufacturing apparatus provided at least with the organic film forming chamber for forming the organic layer on the surface of the electron hole injection electrode of the substrate formed with the electrode on the surface, and the conveyance chamber arranged in an interior of a robot for conveying the electron hole injection electrode formed substrate to the organic film forming chamber. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は、正孔注入電極を表面に形成した基板の当該電極の表面に有機層を均一に形成して高品質な有機EL素子を安定に製造する方法に関する。
【0002】
【従来の技術】
有機化合物を利用したエレクトロルミネッセンス素子(有機EL素子)は、これまでにない高い変換効率を有する電気−光変換系素子としてフラットパネル型ディスプレイに代表される次世代ディスプレイなどへの応用が期待されており、近年、その開発が急速に進められている。
有機EL素子の一例としては、図3にその断面を示したような、ガラスなどの透明材質からなる基板102の表面に形成した透明の正孔注入電極(陽極)103の表面に、正孔輸送層104、発光層105、電子輸送層106、背面電極(陰極)107を積層し、最後に封止材108にて全体を封止した有機EL素子101が挙げられる。このような構成において、正孔輸送層104、発光層105、電子輸送層106は、それぞれの機能を有する有機化合物からなる有機層である。
図3に示した有機EL素子101は、例えば、図4にその概略を示した正孔注入電極を表面に形成した基板(正孔注入電極形成基板)の当該電極の表面に有機層を形成するための装置(有機層形成装置)を用いて製造される。
図4において、符号1はロード室、符号2は搬送室、符号3は前処理室、符号4は有機成膜室、符号5はストッカー室、符号6は搬送室、符号7は有機成膜室、符号8は有機成膜室、符号9はストッカー室、符号10は搬送室、符号11は有機成膜室、符号12は電極成膜室、符号13は封止室、符号14はアンロード室、符号a〜lはゲートバルブである。ロード室1にて正孔注入電極103を表面に形成した基板102をセットし、ゲートバルブaを介して搬送室2に搬入した後、搬送室2の内部に配置した図略のロボットでゲートバルブbを介して前処理室3に搬送してオゾンガスや紫外線照射などにより正孔注入電極103の表面を洗浄し、その後、順次、有機成膜室4,7,8,11、電極成膜室12、封止室13に搬送し、洗浄した正孔注入電極103の表面に、正孔輸送層104、発光層105、電子輸送層106、背面電極(陰極)107をそれぞれ積層し、最後に封止材108にて全体を封止してアンロード室14から有機EL素子101を搬出する。
【0003】
ところで、有機層形成装置を長時間運転した場合、有機成膜室の内壁やその内部にセットした防着板(有機成膜室の内壁に蒸着材料が付着することを防ぐための保護板)などに蒸着材料が大量に付着し、付着した蒸着材料が均一な有機層の形成に悪影響を及ぼすことがある。従って、このような事態を回避するために、有機層形成装置の洗浄方法として、例えば、下記特許文献1において、有機成膜室の内部に赤外光や紫外線などを照射して付着している蒸着材料を昇華させ、昇華した蒸着材料を排気することで、有機成膜室の内壁やその内部にセットした防着板などに付着した蒸着材料を除去する方法が提案されている。
しかしながら、有機成膜室の内壁やその内部にセットした防着板などに付着した蒸着材料を除去しても、時として、製造された有機EL素子の中に品質に劣るものが含まれてくる場合があった。
【0004】
【特許文献1】
特開2002−60926号公報
【0005】
【発明が解決しようとする課題】
そこで本発明は、正孔注入電極を表面に形成した基板の当該電極の表面に有機層を均一に形成して高品質な有機EL素子を安定に製造する方法を提供することを目的とする。
【0006】
【課題を解決するための手段】
本発明者らは上記の点に鑑みて種々の検討を行ったところ、有機成膜室の内壁やその内部にセットした防着板などに付着した蒸着材料を除去しても、時として、製造された有機EL素子の中に品質に劣るものが含まれてくる場合があるのは、搬送室の汚染に起因することを突き止めた。これまで、搬送室の清浄度が正孔注入電極形成基板の当該電極の表面への有機層の形成にどのような影響を及ぼすかについては検討されたことはなく、従って、その対策についても何ら提案されたことはない。
【0007】
本発明は、以上の背景に基づいてなされたものであり、本発明の有機EL素子製造装置の洗浄方法は、請求項1記載の通り、正孔注入電極を表面に形成した基板の当該電極の表面に有機層を形成するための有機成膜室と、正孔注入電極形成基板を有機成膜室に搬送するためのロボットを内部に配置した搬送室を少なくとも備えた有機EL素子製造装置の有機成膜室の内部にセットした蒸着源を新しい蒸着源に交換する時間を利用して、搬送室の内部をオゾンガスで洗浄することを特徴とする。
また、本発明の有機EL素子の製造方法は、請求項2記載の通り、正孔注入電極を表面に形成した基板の当該電極の表面に有機層を形成するための有機成膜室と、正孔注入電極形成基板を有機成膜室に搬送するためのロボットを内部に配置した搬送室を少なくとも備えた有機EL素子製造装置の有機成膜室の内部にセットした蒸着源を新しい蒸着源に交換する時間を利用して、搬送室の内部をオゾンガスで洗浄してから有機層を形成することを特徴とする。
【0008】
【発明の実施の形態】
本発明の有機EL素子製造装置の洗浄方法は、正孔注入電極を表面に形成した基板の当該電極の表面に有機層を形成するための有機成膜室と、正孔注入電極形成基板を有機成膜室に搬送するためのロボットを内部に配置した搬送室を少なくとも備えた有機EL素子製造装置の有機成膜室の内部にセットした蒸着源を新しい蒸着源に交換する時間を利用して、搬送室の内部をオゾンガスで洗浄することを特徴とするものである。また、本発明の有機EL素子の製造方法は、正孔注入電極を表面に形成した基板の当該電極の表面に有機層を形成するための有機成膜室と、正孔注入電極形成基板を有機成膜室に搬送するためのロボットを内部に配置した搬送室を少なくとも備えた有機EL素子製造装置の有機成膜室の内部にセットした蒸着源を新しい蒸着源に交換する時間を利用して、搬送室の内部をオゾンガスで洗浄してから有機層を形成することを特徴とするものである。
例えば、図4に示した有機層形成装置の搬送室2には、ロード室1からゲートバルブaを介して少なからず大気中の有機物などが侵入するとともに、有機成膜室4からゲートバルブcを介して少なからず蒸着材料が侵入するので、これらがその内部に付着するという現象が起きる。また、搬送室6には、有機成膜室7と有機成膜室8からそれぞれ異なった蒸着材料が少なからず侵入するので、これらがその内部に付着するという現象が起きる。本発明は、このような現象によって汚染された搬送室の内部を、有機EL素子の製造工程において行われる、有機成膜室の内部にセットした蒸着源を新しい蒸着源に交換する時間を利用して、オゾンガスで洗浄することで付着した大気中の有機物などや蒸着材料を除去し、正孔注入電極形成基板の当該電極の表面に有機層を均一に形成して高品質な有機EL素子を安定に製造するものである。
【0009】
有機成膜室の内部にセットした蒸着源を新しい蒸着源に交換する時間を利用して、搬送室の内部をオゾンガスで洗浄する方法は、特段限定されるものではなく、例えば、搬送室にオゾナイザー(オゾン発生装置)で発生させたオゾンガスを供給するような態様で行えばよい。図4に示した有機層形成装置の有機成膜室4の内部にセットした蒸着源を新しい蒸着源に交換する場合、搬送室2,6,10にオゾンガスを供給することでその内部を洗浄する。なお、搬送室の内部の洗浄は、必ずしも全ての搬送室に対して同時に行わなければならないというものではなく、任意の搬送室を選択して選択した搬送室の内部だけを洗浄するようにしてもよい。
【0010】
洗浄条件としては、例えば、搬送室の内部にオゾンガスをその圧力が100〜300Torrになるまで投入してから0.5〜5時間放置した後、高真空排気を0.5時間以上行うという条件が望ましい。必要によりこのようなサイクルを複数回行ってもよいことは言うまでもない。
【0011】
なお、搬送室の内部を洗浄すると同時に、ロード室、前処理室、ストッカー室、アンロード室などにもオゾンガスを供給して内部を洗浄することが望ましい。これらもその内部に大気中の有機物などや蒸着材料が付着して汚染されることで均一な有機層の形成に悪影響を及ぼす恐れがあるためである。
【0012】
【実施例】
以下、本発明の有機EL素子製造装置の洗浄方法を実施例に基づいて説明するが、本発明は以下の記載に何ら限定して解釈されるものではない。
【0013】
実験A.有機層形成装置の搬送室の内部をオゾンガスで洗浄することの効果
一定時間運転した図4に示した有機層形成装置の搬送室2の内部に6枚のダミー基板を挿入して30分間高真空排気した後(圧力6.9×10−4Pa)、大気開放してダミー基板を取り出した。取り出したダミー基板の表面の水接触角を測定することで搬送室2の内部の清浄度を評価したところ、3.8°であったイニシャル平均値は25.4°にまで増加した。この現象は、搬送室2の内部に付着していた大気中の有機物などや蒸着材料が離脱し、ダミー基板に再付着したことでその表面が汚染されたことに起因するものと推察された。
1回目の洗浄としてオゾンガスをその圧力が200Torrになるまで搬送室2の内部に投入してから2時間放置した後、高真空排気を2時間行った。大気開放してから搬送室2の内部に6枚のダミー基板を挿入して30分間高真空排気した後(圧力5.3×10−4Pa)、大気開放してダミー基板を取り出し、その表面の水接触角を測定したところ、3.5°であったイニシャル平均値は11.3°にまで増加した。
その後、再び高真空排気を2時間行った。大気開放してから搬送室2の内部に6枚のダミー基板を挿入して30分間高真空排気した後(圧力4.5×10−4Pa)、大気開放してダミー基板を取り出し、その表面の水接触角を測定したところ、3.5°であったイニシャル平均値は11.3°にまで増加した。
2回目の洗浄としてオゾンガスをその圧力が200Torrになるまで搬送室2の内部に投入してから2時間放置した後、高真空排気を2時間行った。大気開放してから搬送室2の内部に6枚のダミー基板を挿入して30分間高真空排気した後(圧力3.9×10−4Pa)、大気開放してダミー基板を取り出し、その表面の水接触角を測定したところ、3.8°であったイニシャル平均値は9.5°にまで増加した。
その後、再び高真空排気を2時間行った。大気開放してから搬送室2の内部に6枚のダミー基板を挿入して30分間高真空排気した後(圧力1.9×10−4Pa)、大気開放してダミー基板を取り出し、その表面の水接触角を測定したところ、3.5°であったイニシャル平均値は9.0°にまで増加した。
3回目の洗浄としてオゾンガスをその圧力が200Torrになるまで搬送室2の内部に投入してから2時間放置した後、高真空排気を2時間行った。大気開放してから搬送室2の内部に6枚のダミー基板を挿入して30分間高真空排気した後(圧力2.8×10−4Pa)、大気開放してダミー基板を取り出し、その表面の水接触角を測定したところ、3.4°であったイニシャル平均値は4.6°にまで増加した。
その後、再び高真空排気を2時間行った。大気開放してから搬送室2の内部に6枚のダミー基板を挿入して30分間高真空排気した後(圧力2.3×10−4Pa)、大気開放してダミー基板を取り出し、その表面の水接触角を測定したところ、3.6°であったイニシャル平均値は4.1°にまで増加した。
4回目の洗浄としてオゾンガスをその圧力が200Torrになるまで搬送室2の内部に投入してから2時間放置した後、高真空排気を24時間行った。大気開放してからストッカー室5の内部に6枚のダミー基板を挿入して30分間高真空排気した後(圧力1.9×10−4Pa)、大気開放してダミー基板を取り出し、その表面の水接触角を測定したところ、3.6°であったイニシャル平均値に変動はなかった。
【0014】
以上の結果の詳細データを表1に示す。また、ダミー基板の表面の水接触角の平均値の推移を図1に示す。
【0015】
【表1】

Figure 2004192858
【0016】
図1から明らかなように、ダミー基板の表面の水接触角の平均値はオゾンガスによる洗浄の回数を重ねるにつれて減少した。このことから、実験開始前には大気中の有機物などや蒸着材料が搬送室2の内部に大量に付着していたものの、オゾンガスによる洗浄により除去したことで、搬送室2の内部の清浄化が図られたことがわかった。
【0017】
実験B.搬送室の内部をオゾンガスで洗浄した有機層形成装置を用いた有機EL素子の製造
実験Aにおいて搬送室の内部に対してオゾンガスによる洗浄を4回行った有機層形成装置を用いて常法に従って有機EL素子を製造した。任意に選択した10個の有機EL素子についてそれらの性能を調べたところ、いずれの素子も短時間で駆動電圧値の上昇をきたすようなことはなかった(図2実施例)。一方、搬送室の内部に対してオゾンガスによる洗浄を行わなかった有機層形成装置を用いて有機EL素子を製造した場合には、製造された素子の中に短時間で駆動電圧値の上昇をきたすものが存在した(図2比較例)。このことから、有機層形成装置の搬送室の内部をオゾンガスで洗浄してから正孔注入電極形成基板の当該電極の表面に有機層を形成すれば、製造される有機EL素子について、その高品質維持と歩留まり向上が可能であることがわかった。
【0018】
【発明の効果】
本発明によれば、正孔注入電極を表面に形成した基板の当該電極の表面に有機層を均一に形成して高品質な有機EL素子を安定に製造する方法が提供される。
【図面の簡単な説明】
【図1】実施例におけるダミー基板の表面の水接触角の平均値の推移を示すグラフ。
【図2】実施例における有機EL素子の性能の比較を示すグラフ。
【図3】有機EL素子の構成の一例の断面図。
【図4】有機層形成装置の一例の概略図。
【符号の説明】
1 ロード室
2,6,10 搬送室
3 前処理室
4,7,8,11 有機成膜室
5,9 ストッカー室
12 電極成膜室
13 封止室
14 アンロード室
a〜l ゲートバルブ
101 有機EL素子
102 基板
103 正孔注入電極(陽極)
104 正孔輸送層
105 発光層
106 電子輸送層
107 背面電極(陰極)
108 封止材[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for stably producing a high-quality organic EL device by uniformly forming an organic layer on a surface of a substrate having a hole injection electrode formed on the surface of the electrode.
[0002]
[Prior art]
Electroluminescent devices (organic EL devices) using organic compounds are expected to be applied to next-generation displays, such as flat panel displays, as electro-optical conversion devices having unprecedentedly high conversion efficiency. In recent years, its development has been rapidly progressing.
As an example of the organic EL element, a hole transporting electrode (anode) 103 formed on the surface of a substrate 102 made of a transparent material such as glass as shown in the cross section in FIG. An organic EL element 101 in which a layer 104, a light-emitting layer 105, an electron transport layer 106, and a back electrode (cathode) 107 are stacked, and finally the whole is sealed with a sealing material 108 is given. In such a configuration, the hole transport layer 104, the light emitting layer 105, and the electron transport layer 106 are organic layers made of organic compounds having respective functions.
The organic EL element 101 shown in FIG. 3 has, for example, an organic layer formed on the surface of a substrate (hole injection electrode forming substrate) having a hole injection electrode schematically shown in FIG. (Organic layer forming apparatus).
4, reference numeral 1 denotes a load chamber, reference numeral 2 denotes a transfer chamber, reference numeral 3 denotes a pretreatment chamber, reference numeral 4 denotes an organic film formation chamber, reference numeral 5 denotes a stocker room, reference numeral 6 denotes a transfer chamber, and reference numeral 7 denotes an organic film formation chamber. Reference numeral 8 denotes an organic film formation chamber, reference numeral 9 denotes a stocker room, reference numeral 10 denotes a transfer chamber, reference numeral 11 denotes an organic film formation chamber, reference numeral 12 denotes an electrode film formation chamber, reference numeral 13 denotes a sealing chamber, and reference numeral 14 denotes an unload chamber. , Symbols al are gate valves. The substrate 102 having the hole injection electrode 103 formed on the surface thereof is set in the load chamber 1, loaded into the transfer chamber 2 via the gate valve a, and then gated by a robot (not shown) disposed inside the transfer chamber 2. b, and is conveyed to the pretreatment chamber 3 to wash the surface of the hole injection electrode 103 by irradiating ozone gas, ultraviolet rays, or the like, and then, sequentially, the organic film formation chambers 4, 7, 8, 11 and the electrode film formation chamber 12 The hole transport layer 104, the light emitting layer 105, the electron transport layer 106, and the back electrode (cathode) 107 are respectively stacked on the surface of the hole injection electrode 103 which has been transported to the sealed chamber 13 and washed, and finally sealed. The whole is sealed with the material 108 and the organic EL element 101 is carried out from the unloading chamber 14.
[0003]
By the way, when the organic layer forming apparatus is operated for a long time, an inner wall of the organic film forming chamber or an anti-adhesion plate set therein (a protective plate for preventing the deposition material from adhering to the inner wall of the organic film forming chamber), etc. In some cases, a large amount of the vapor deposition material adheres to the substrate, and the deposited vapor deposition material may adversely affect the formation of a uniform organic layer. Therefore, in order to avoid such a situation, as a method of cleaning the organic layer forming apparatus, for example, in Patent Literature 1 below, the inside of the organic film formation chamber is irradiated with infrared light or ultraviolet light and adhered. A method has been proposed in which a vapor deposition material is sublimated and the sublimated vapor deposition material is exhausted to remove the vapor deposition material attached to an inner wall of an organic film formation chamber or an anti-adhesion plate set therein.
However, even if the deposition material adhered to the inner wall of the organic film formation chamber or the deposition-prevention plate set inside the organic film formation chamber is removed, inferior quality is sometimes included in the manufactured organic EL elements. There was a case.
[0004]
[Patent Document 1]
JP-A-2002-60926 [0005]
[Problems to be solved by the invention]
Therefore, an object of the present invention is to provide a method for stably producing a high-quality organic EL device by uniformly forming an organic layer on the surface of a substrate having a hole injection electrode formed on the surface.
[0006]
[Means for Solving the Problems]
The present inventors have conducted various studies in view of the above points, and found that even when the deposition material attached to the inner wall of the organic film formation chamber or the deposition-preventing plate set inside the organic film formation chamber was removed, the production was sometimes performed. In some cases, inferior quality was included in the obtained organic EL elements, which was found to be caused by contamination of the transfer chamber. Until now, no consideration has been given to the effect of the cleanliness of the transfer chamber on the formation of the organic layer on the surface of the electrode on which the hole injection electrode is formed, and no measures have been taken. Never proposed.
[0007]
The present invention has been made based on the above background, and a method for cleaning an organic EL device manufacturing apparatus according to the present invention is directed to a method of cleaning a substrate having a hole injection electrode formed on a surface thereof, as described in claim 1. An organic EL device manufacturing apparatus comprising at least an organic film forming chamber for forming an organic layer on the surface and a transfer chamber in which a robot for transferring the hole injection electrode forming substrate to the organic film forming chamber is disposed. The inside of the transfer chamber is cleaned with ozone gas by utilizing the time for replacing the evaporation source set inside the film formation chamber with a new evaporation source.
According to a second aspect of the present invention, there is provided a method of manufacturing an organic EL device, comprising: an organic film forming chamber for forming an organic layer on a surface of a substrate having a hole injection electrode formed on the surface; The evaporation source set inside the organic film formation chamber of the organic EL device manufacturing apparatus having at least a transfer chamber in which a robot for transferring the hole injection electrode forming substrate to the organic film formation chamber is replaced with a new evaporation source The organic layer is formed after the inside of the transfer chamber is cleaned with ozone gas using the time required.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
The method for cleaning an organic EL device manufacturing apparatus according to the present invention includes an organic film forming chamber for forming an organic layer on a surface of a substrate having a hole injection electrode formed on the surface thereof, Utilizing a time for exchanging a deposition source set inside the organic film formation chamber of the organic EL element manufacturing apparatus with at least a transfer chamber in which a robot for transferring the film to the film formation chamber is provided, The inside of the transfer chamber is washed with ozone gas. In addition, the method for manufacturing an organic EL device of the present invention includes an organic film forming chamber for forming an organic layer on a surface of a substrate having a hole injection electrode formed on the surface thereof, and an organic film forming chamber for forming a hole injection electrode. Utilizing a time for exchanging a deposition source set inside the organic film formation chamber of the organic EL element manufacturing apparatus with at least a transfer chamber in which a robot for transferring the film to the film formation chamber is provided, An organic layer is formed after cleaning the inside of the transfer chamber with ozone gas.
For example, the transport chamber 2 of the organic layer forming apparatus shown in FIG. Since a considerable amount of vapor deposition material penetrates through the space, a phenomenon occurs in which these adhere to the inside thereof. In addition, since different vapor deposition materials from the organic film forming chamber 7 and the organic film forming chamber 8 enter the transfer chamber 6, a phenomenon that these materials adhere to the inside thereof occurs. The present invention utilizes the time for replacing the evaporation source set inside the organic film forming chamber with a new evaporation source, which is performed in the process of manufacturing an organic EL element, inside the transfer chamber contaminated by such a phenomenon. Then, by washing with ozone gas, organic substances and deposition materials in the air are removed, and an organic layer is uniformly formed on the surface of the electrode on the hole injection electrode forming substrate to stabilize a high-quality organic EL element. To be manufactured.
[0009]
The method of cleaning the inside of the transfer chamber with ozone gas using the time for replacing the evaporation source set inside the organic film formation chamber with a new evaporation source is not particularly limited. For example, an ozonizer may be provided in the transfer chamber. What is necessary is just to perform in the mode which supplies the ozone gas generated by the (ozone generator). When replacing the evaporation source set inside the organic film forming chamber 4 of the organic layer forming apparatus shown in FIG. 4 with a new evaporation source, the insides are cleaned by supplying ozone gas to the transfer chambers 2, 6, and 10. . Note that the cleaning of the inside of the transfer chamber does not necessarily have to be performed simultaneously for all the transfer chambers, and an arbitrary transfer chamber may be selected to wash only the inside of the selected transfer chamber. Good.
[0010]
The cleaning conditions include, for example, a condition in which ozone gas is introduced into the transfer chamber until the pressure reaches 100 to 300 Torr, and then left for 0.5 to 5 hours, and then high vacuum evacuation is performed for 0.5 hour or more. desirable. Needless to say, such a cycle may be performed a plurality of times if necessary.
[0011]
At the same time as cleaning the inside of the transfer chamber, it is desirable to supply the ozone gas to the load chamber, the pretreatment chamber, the stocker chamber, the unload chamber, and the like to clean the inside. This is also because these substances may adversely affect the formation of a uniform organic layer by adhering and contaminating atmospheric organic substances and vapor deposition materials therein.
[0012]
【Example】
Hereinafter, the method for cleaning an organic EL device manufacturing apparatus of the present invention will be described based on examples, but the present invention should not be construed as being limited to the following description.
[0013]
Experiment A. Effect of cleaning the inside of the transfer chamber of the organic layer forming apparatus with ozone gas Six dummy substrates were inserted into the inside of the transfer chamber 2 of the organic layer forming apparatus shown in FIG. After evacuating (pressure 6.9 × 10 −4 Pa), the substrate was opened to the atmosphere and the dummy substrate was taken out. When the cleanliness inside the transfer chamber 2 was evaluated by measuring the water contact angle on the surface of the dummy substrate taken out, the initial average value of 3.8 ° increased to 25.4 °. This phenomenon was presumed to be due to the fact that the organic substances and the like and the vapor deposition material in the atmosphere that had adhered to the inside of the transfer chamber 2 were detached and re-adhered to the dummy substrate, thereby contaminating the surface.
As the first cleaning, ozone gas was introduced into the transfer chamber 2 until the pressure reached 200 Torr, and then left for 2 hours, followed by high vacuum evacuation for 2 hours. After exposing to the atmosphere, six dummy substrates are inserted into the transfer chamber 2 and evacuated to a high vacuum for 30 minutes (pressure 5.3 × 10 −4 Pa). When the water contact angle was measured, the initial average value, which was 3.5 °, increased to 11.3 °.
Thereafter, high vacuum evacuation was performed again for 2 hours. After exposing to the atmosphere, six dummy substrates are inserted into the transfer chamber 2 and evacuated to a high vacuum for 30 minutes (pressure 4.5 × 10 −4 Pa). When the water contact angle was measured, the initial average value, which was 3.5 °, increased to 11.3 °.
As the second cleaning, ozone gas was introduced into the transfer chamber 2 until the pressure reached 200 Torr, and then left for 2 hours. Then, high vacuum evacuation was performed for 2 hours. After exposing to the atmosphere, the six dummy substrates are inserted into the transfer chamber 2 and evacuated to a high vacuum for 30 minutes (pressure 3.9 × 10 −4 Pa). When the water contact angle was measured, the initial average value, which was 3.8 °, increased to 9.5 °.
Thereafter, high vacuum evacuation was performed again for 2 hours. After exposing to the atmosphere, six dummy substrates are inserted into the transfer chamber 2 and evacuated to a high vacuum for 30 minutes (pressure 1.9 × 10 −4 Pa). When the water contact angle was measured, the initial average value, which was 3.5 °, increased to 9.0 °.
As a third cleaning, an ozone gas was introduced into the transfer chamber 2 until the pressure reached 200 Torr, and then left for 2 hours. Then, high vacuum evacuation was performed for 2 hours. After exposing to the atmosphere, six dummy substrates are inserted into the transfer chamber 2 and evacuated to a high vacuum for 30 minutes (pressure 2.8 × 10 −4 Pa). When the water contact angle was measured, the initial average value, which was 3.4 °, increased to 4.6 °.
Thereafter, high vacuum evacuation was performed again for 2 hours. After exposing to the atmosphere, six dummy substrates are inserted into the transfer chamber 2 and evacuated to a high vacuum for 30 minutes (pressure 2.3 × 10 −4 Pa). When the water contact angle was measured, the initial average value, which was 3.6 °, increased to 4.1 °.
As the fourth cleaning, the ozone gas was introduced into the transfer chamber 2 until the pressure reached 200 Torr, and then left for 2 hours. Then, high vacuum evacuation was performed for 24 hours. After opening to the atmosphere, six dummy substrates are inserted into the interior of the stocker chamber 5 and evacuated to a high vacuum for 30 minutes (pressure 1.9 × 10 −4 Pa). When the water contact angle was measured, there was no change in the initial average value of 3.6 °.
[0014]
Table 1 shows the detailed data of the above results. FIG. 1 shows the transition of the average value of the water contact angle on the surface of the dummy substrate.
[0015]
[Table 1]
Figure 2004192858
[0016]
As is clear from FIG. 1, the average value of the water contact angle on the surface of the dummy substrate decreased as the number of times of cleaning with ozone gas increased. From this, before the start of the experiment, a large amount of organic substances and vapor deposition materials in the atmosphere had adhered to the inside of the transfer chamber 2, but the inside of the transfer chamber 2 was cleaned by being removed by washing with ozone gas. It turned out that it was planned.
[0017]
Experiment B. Organic EL Device Manufacturing Experiment Using an Organic Layer Forming Apparatus in which the Inside of a Transfer Chamber was Washed with Ozone Gas In an experiment A, an organic layer was formed using an organic layer forming apparatus in which the inside of the transfer chamber was washed four times with ozone gas. An EL device was manufactured. When the performance of ten arbitrarily selected organic EL elements was examined, none of the elements caused an increase in the drive voltage value in a short time (Example of FIG. 2). On the other hand, when an organic EL element is manufactured using an organic layer forming apparatus in which the inside of the transfer chamber is not cleaned with ozone gas, the drive voltage value increases in a short time in the manufactured element. There was one (Comparative Example in FIG. 2). Therefore, if the inside of the transfer chamber of the organic layer forming apparatus is cleaned with ozone gas and then the organic layer is formed on the surface of the electrode of the hole injection electrode forming substrate, the high quality of the organic EL element to be manufactured can be obtained. It was found that maintenance and yield improvement were possible.
[0018]
【The invention's effect】
According to the present invention, there is provided a method for stably producing a high-quality organic EL device by uniformly forming an organic layer on the surface of a substrate having a hole injection electrode formed on the surface thereof.
[Brief description of the drawings]
FIG. 1 is a graph showing transition of an average value of a water contact angle on the surface of a dummy substrate in an example.
FIG. 2 is a graph showing a comparison of the performance of an organic EL element in an example.
FIG. 3 is a cross-sectional view illustrating an example of a configuration of an organic EL element.
FIG. 4 is a schematic view of an example of an organic layer forming apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Load chambers 2, 6, 10 Transfer chamber 3 Pretreatment chambers 4, 7, 8, 11 Organic film formation chambers 5, 9 Stocker room 12 Electrode film formation room 13 Sealing room 14 Unloading room al Gate valve 101 Organic EL element 102 Substrate 103 Hole injection electrode (anode)
104 hole transport layer 105 light emitting layer 106 electron transport layer 107 back electrode (cathode)
108 sealing material

Claims (2)

正孔注入電極を表面に形成した基板の当該電極の表面に有機層を形成するための有機成膜室と、正孔注入電極形成基板を有機成膜室に搬送するためのロボットを内部に配置した搬送室を少なくとも備えた有機EL素子製造装置の有機成膜室の内部にセットした蒸着源を新しい蒸着源に交換する時間を利用して、搬送室の内部をオゾンガスで洗浄することを特徴とする有機EL素子製造装置の洗浄方法。An organic film forming chamber for forming an organic layer on the surface of the substrate on which the hole injection electrode is formed and a robot for transporting the hole injection electrode forming substrate to the organic film forming chamber are arranged inside. Cleaning the inside of the transfer chamber with ozone gas using the time for replacing the evaporation source set inside the organic film forming chamber of the organic EL element manufacturing apparatus having at least the transfer chamber with a new deposition source. Cleaning method for an organic EL device manufacturing apparatus. 正孔注入電極を表面に形成した基板の当該電極の表面に有機層を形成するための有機成膜室と、正孔注入電極形成基板を有機成膜室に搬送するためのロボットを内部に配置した搬送室を少なくとも備えた有機EL素子製造装置の有機成膜室の内部にセットした蒸着源を新しい蒸着源に交換する時間を利用して、搬送室の内部をオゾンガスで洗浄してから有機層を形成することを特徴とする有機EL素子の製造方法。An organic film forming chamber for forming an organic layer on the surface of the substrate on which the hole injection electrode is formed and a robot for transporting the hole injection electrode forming substrate to the organic film forming chamber are arranged inside. Cleaning the inside of the transfer chamber with ozone gas using the time for replacing the evaporation source set inside the organic film formation chamber of the organic EL device manufacturing apparatus having at least the transfer chamber with Forming an organic EL device.
JP2002356912A 2002-12-09 2002-12-09 Cleaning method for organic EL element manufacturing apparatus and organic EL element manufacturing method Expired - Fee Related JP4139205B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005117498A1 (en) * 2004-05-31 2005-12-08 Ulvac, Inc Process for fabricating organic el element and method for cleaning system for fabricating organic el element
WO2019167121A1 (en) * 2018-02-27 2019-09-06 シャープ株式会社 Display device production method and production device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005117498A1 (en) * 2004-05-31 2005-12-08 Ulvac, Inc Process for fabricating organic el element and method for cleaning system for fabricating organic el element
US7690960B2 (en) 2004-05-31 2010-04-06 Ulvac, Inc. Production method of organic EL device and cleaning method of organic EL device production apparatus
WO2019167121A1 (en) * 2018-02-27 2019-09-06 シャープ株式会社 Display device production method and production device

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