JP2003306771A - Film deposition system with glove box - Google Patents

Film deposition system with glove box

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Publication number
JP2003306771A
JP2003306771A JP2002114192A JP2002114192A JP2003306771A JP 2003306771 A JP2003306771 A JP 2003306771A JP 2002114192 A JP2002114192 A JP 2002114192A JP 2002114192 A JP2002114192 A JP 2002114192A JP 2003306771 A JP2003306771 A JP 2003306771A
Authority
JP
Japan
Prior art keywords
chamber
glove box
vacuum
film forming
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002114192A
Other languages
Japanese (ja)
Inventor
Hideyuki Odagi
秀幸 小田木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2002114192A priority Critical patent/JP2003306771A/en
Publication of JP2003306771A publication Critical patent/JP2003306771A/en
Pending legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition system with a glove box, which is capable of suppressing the load against the variation in process conditions of whole film deposition process and the system even when a glove box chamber is added as one of system constituents so as to prevent mixing of impurities. <P>SOLUTION: The film deposition system with the glove box has a constitution that a vacuum film deposition chamber 1 is allowed to communicate with the glove box chamber 3 through a vacuum substrate-carrying chamber 2. The glove box chamber 3 has a pass chamber 4 which can be vacuum exhausted through an auxiliary exhausting valve 13 by an auxiliary exhaust pump 19. In this case, the pass chamber 4 can be omitted when an opening/closing door 2b for taking in and out a substrate 23 is provided to the vacuum substrate- carrying chamber 2. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明はグローブボックス付
き成膜装置に関する。
TECHNICAL FIELD The present invention relates to a film forming apparatus with a glove box.

【0002】[0002]

【従来の技術】例えば、エピタキシャル成長装置や有機
エレクトロルミネッセンス素子製造用蒸着装置などにお
いて、成膜材料に対して水分や酸素またはパーティクル
などの不純物を混入させずに精緻な膜表面を形成するこ
とが求められている。
2. Description of the Related Art For example, in an epitaxial growth apparatus or a vapor deposition apparatus for manufacturing an organic electroluminescence element, it is required to form a fine film surface without mixing impurities such as water, oxygen or particles into a film forming material. Has been.

【0003】このため、例えば、特開2000−203
991号公報に示す気相エピタキシャル成長装置におい
ては、水分や酸素の混入防止やパーティクル除去などの
ため基板の仕込直後や取出し直前にグローブボックス室
を経由させている。グローブボックス室は、大気圧下で
乾燥窒素ガスを封入したり流通させたりするなどして、
基板や成膜用のマスクなど部品の清浄を簡便に行い得る
ものであり、上記のような不純物の混入防止に効果的で
ある。
Therefore, for example, Japanese Patent Laid-Open No. 2000-203
In the vapor phase epitaxial growth apparatus disclosed in Japanese Patent No. 991, a glove box chamber is passed immediately before substrate loading and immediately before substrate removal in order to prevent mixing of water and oxygen and remove particles. In the glove box chamber, by filling and circulating dry nitrogen gas under atmospheric pressure,
The components such as the substrate and the mask for film formation can be easily cleaned, and it is effective for preventing the above-mentioned contamination of impurities.

【0004】[0004]

【発明が解決しようとする課題】ところで、一般に、グ
ローブボックス室は大気圧下で用いるものであり、成膜
装置は高真空下で作動させるものであるため、これらを
直接接続して双方間で基板等を搬出入すると、搬出入の
たびに成膜装置内の圧力を一旦大気圧に戻す工程が必要
となる。即ち、グローブボックス室で調整された基板を
搬入する際に成膜装置内を大気圧に開放した後に、あら
ためて運転時の真空状態に到達するまで真空排気を行
い、また搬出の際にも成膜装置内の圧力を大気圧に開放
してから、乾燥窒素ガスの封入または流通状態にあるグ
ローブボックス室内での清浄作業を行うこととなる。そ
して、このときに、グローブボックス室とこれに直結す
る成膜装置内が、圧力及び雰囲気において干渉し合うこ
とが避けられない。
By the way, in general, the glove box chamber is used under atmospheric pressure, and the film forming apparatus is operated under high vacuum. When a substrate or the like is carried in and out, a step of temporarily returning the pressure in the film forming apparatus to the atmospheric pressure is required every time the substrate is carried in and out. That is, when the adjusted substrate is loaded into the glove box chamber, the inside of the film deposition apparatus is opened to atmospheric pressure, and then vacuum evacuation is performed until the vacuum state during operation is reached again, and film deposition is also performed during unloading. After the pressure inside the apparatus is released to the atmospheric pressure, the cleaning work is performed inside the glove box chamber in which the dry nitrogen gas is sealed or is in a circulating state. At this time, it is unavoidable that the glove box chamber and the inside of the film forming apparatus directly connected thereto interfere with each other in pressure and atmosphere.

【0005】従って、成膜装置内の真空排気作動や、グ
ローブボックス室内の乾燥窒素ガスの封入または流通を
行うためには、定常状態に到達するまで相当の時間を確
保する必要があり、それぞれ成膜工程におけるタクトタ
イムを長期化させる要因となる。また、精密製品を多く
用いる成膜装置内の環境変化を、大気圧状態と高真空状
態との間で短期間に繰り返すことは、成膜装置の製品寿
命の点で問題がある。
Therefore, in order to perform vacuum evacuation operation in the film forming apparatus and to fill or distribute dry nitrogen gas in the glove box chamber, it is necessary to secure a considerable time until the steady state is reached. It becomes a factor to prolong the tact time in the film process. Further, repeating the environmental change in the film forming apparatus, which uses many precision products, between the atmospheric pressure state and the high vacuum state in a short time has a problem in the product life of the film forming apparatus.

【0006】本発明は、上記問題に鑑み、不純物の混入
防止のためグローブボックス室を装置構成に加えても、
成膜工程全体の工程条件の変動や装置に対する負担を抑
制し得るグローブボックス付き成膜装置を提供すること
を課題としている。
In view of the above problems, the present invention has a glove box chamber added to the apparatus structure for preventing impurities from entering.
An object of the present invention is to provide a film forming apparatus with a glove box capable of suppressing fluctuations in process conditions of the entire film forming process and burden on the apparatus.

【0007】[0007]

【課題を解決するための手段】上記課題を解決するた
め、本発明は、真空成膜室と真空排気可能な前室付きの
グローブボックス室とを真空基板搬送室を介して連通し
て構成している。これにより、グローブボックス室にて
清浄などの所定の処理を行う前に、これに直結した前室
に基板を一旦収納した状態で、前室内に対して減圧及び
大気圧への開放を行い、基板表面に吸着した水分などの
不純物の大部分を除去することができる。これは、その
後のグローブボックス室内での清浄作業を効果的に進め
るのに有用である。
In order to solve the above problems, the present invention comprises a vacuum film forming chamber and a glove box chamber having a front chamber capable of being evacuated, which are connected to each other through a vacuum substrate transfer chamber. ing. As a result, before performing a predetermined process such as cleaning in the glove box chamber, the substrate is once housed in a front chamber directly connected to the glove box chamber, and the front chamber is depressurized and released to the atmospheric pressure. Most of impurities such as water adsorbed on the surface can be removed. This is useful for effectively performing the subsequent cleaning operation in the glove box room.

【0008】そして、この基板をグローブボックス室に
搬送し、大気圧下で乾燥窒素ガスの封入や流通を行って
基板に対する清浄を行った後、大気圧に開放した状態の
真空基板搬送室に搬入する。その後、真空基板搬送室
を、真空成膜室の待機状態に近い所定の圧力まで減圧し
てから、待機状態の真空成膜室と連通させ、最後に、基
板を真空成膜室内に搬入して、密閉状態で所定の成膜工
程を行う。
Then, the substrate is transported to a glove box chamber, and after filling and circulating dry nitrogen gas under atmospheric pressure to clean the substrate, it is loaded into a vacuum substrate transport chamber opened to atmospheric pressure. To do. After that, the vacuum substrate transfer chamber is depressurized to a predetermined pressure close to the standby state of the vacuum film forming chamber, communicated with the vacuum film forming chamber in the standby state, and finally, the substrate is loaded into the vacuum film forming chamber. The predetermined film forming process is performed in a closed state.

【0009】なお、上記したグローブボックス室に直結
した真空排気可能な前室での不純物の除去作業は、特
に、バッチ処理用に数十枚単位で積層されて、水分など
の不純物を保持し易い基板に対して効果的である。
The removal work of impurities in the front chamber that can be directly evacuated and directly connected to the glove box chamber is particularly stacked for several tens of sheets for batch processing, and it is easy to hold impurities such as moisture. Effective for substrates.

【0010】このようにして、順次不純物濃度を低下さ
せること及び基板の搬送場所の圧力状態を段階的に良好
な真空状態に移行させることにより、タクトタイムの長
期化や成膜装置の寿命の短縮を防ぐことができ、また、
成膜工程全体の工程条件の変動や装置に対する負担が抑
制できる。
In this way, by gradually reducing the impurity concentration and gradually shifting the pressure state of the substrate transfer location to a good vacuum state, the takt time is lengthened and the life of the film forming apparatus is shortened. Can also prevent
It is possible to suppress variations in process conditions of the entire film forming process and a burden on the apparatus.

【0011】また、真空成膜室と、グローブボックス室
とを、基板の仕込及び取出が可能な真空基板搬送室を介
して連通して構成すると、上記したようなグローブボッ
クス室に直結した真空排気可能な前室を省略し、その替
りに真空基板搬送室を用いることができる。したがっ
て、装置構成が簡素化できて、工程条件の変動がさらに
抑制できる。
Further, when the vacuum film forming chamber and the glove box chamber are connected to each other through a vacuum substrate transfer chamber capable of loading and unloading substrates, the vacuum exhaust directly connected to the glove box chamber as described above. Possible vacuum chambers can be omitted and a vacuum substrate transfer chamber can be used instead. Therefore, the device configuration can be simplified, and fluctuations in process conditions can be further suppressed.

【0012】また、真空成膜室と、真空排気可能な前室
付きのグローブボックス室とを、真空成膜室内部品の引
出及び回転機構を介して直結させて構成すると、例え
ば、メンテナンス時に大気圧に開放した真空成膜室内の
防着板やマスクなどの部品をグローブボックス室に容易
に取出すことができて、グローブボックス室でこれらの
交換や、あるいは割れるなどして不良となった部品の回
収などを手作業で簡単に行うことができる。このため、
メンテナンス作業時の装置に対する負担を容易に軽減さ
せることができる。
Further, when the vacuum film forming chamber and the glove box chamber with the antechamber capable of being evacuated are directly connected to each other through the mechanism for pulling out and rotating the components in the vacuum film forming chamber, for example, at the atmospheric pressure during maintenance. Parts such as the deposition preventive plate and mask in the vacuum film forming chamber opened to the outside can be easily taken out to the glove box chamber, and replacement of these in the glove box chamber or recovery of defective parts due to cracking etc. It can be done easily by hand. For this reason,
It is possible to easily reduce the load on the device during maintenance work.

【0013】[0013]

【発明の実施の形態】図1は、本発明によるグローブボ
ックス付き成膜装置の第1の態様を示す略断面図であ
る。
1 is a schematic sectional view showing a first mode of a film forming apparatus with a glove box according to the present invention.

【0014】本装置は、真空成膜室1と真空基板搬送室
2とグローブボックス室3とパスチャンバ(前室)4と
がそれぞれ仕切りバルブ5、6及び7を介した連通構造
で構成されている。また、パスチャンバ4には基板仕込
取出用扉4aが設けられている。グローブボックス室3
の上面には、乾燥窒素発生装置8に連なる乾燥窒素供給
管9が接続され、また、グローブボックス室3の底面に
は、乾燥窒素排出管10が接続され、乾燥窒素排出管1
0は途中で水分分圧計11により管内の水分を計測でき
るようにされている。また、パスチャンバ4と基板搬送
室2と真空成膜室1とには、それぞれの底面に、ベント
バルブ12及び補助排気用バルブ13、ベントバルブ1
4及び補助排気用バルブ15、補助排気用バルブ16、
主排気用バルブ17及びベントバルブ18が接続されて
いる。また、補助排気用バルブ13、15及び16は、
それぞれ補助排気用ポンプ19、20及び21に接続さ
れ、主排気用バルブ17はクライオポンプ22に接続さ
れている。
In the present apparatus, a vacuum film forming chamber 1, a vacuum substrate transfer chamber 2, a glove box chamber 3 and a pass chamber (pre-chamber) 4 are constructed in a communication structure through partition valves 5, 6 and 7, respectively. There is. Further, the pass chamber 4 is provided with a substrate loading / unloading door 4a. Glove box room 3
The dry nitrogen supply pipe 9 connected to the dry nitrogen generator 8 is connected to the upper surface of the, and the dry nitrogen discharge pipe 10 is connected to the bottom surface of the glove box chamber 3, and the dry nitrogen discharge pipe 1
In the case of 0, the water content inside the tube can be measured by the water partial pressure gauge 11. In addition, the pass chamber 4, the substrate transfer chamber 2, and the vacuum film forming chamber 1 have a vent valve 12, an auxiliary exhaust valve 13, and a vent valve 1 on their bottom surfaces.
4 and auxiliary exhaust valve 15, auxiliary exhaust valve 16,
A main exhaust valve 17 and a vent valve 18 are connected. The auxiliary exhaust valves 13, 15 and 16 are
The auxiliary exhaust pumps 19, 20 and 21 are respectively connected, and the main exhaust valve 17 is connected to the cryopump 22.

【0015】このように構成されたグローブボックス付
き成膜装置を用い、キャリアケースに積層された基板2
3に対する成膜工程を行うに際しては、初めに、仕切り
バルブ5、6及び7やベントバルブ12、14及び18
や主排気用バルブ17を閉じた状態にする。そして、基
板仕込取出用扉4aからキャリアケースに収納された基
板23をパスチャンバ4に搬入し、パスチャンバ4内を
気密にした状態で、補助排気用バルブ13と補助排気用
ポンプ19とにより補助排気圧力に到達させる。このと
き、キャリアケースや基板23の表面に吸着していた水
分の大部分が蒸発する。また、これと並行して基板真空
成膜室1内を補助排気用バルブ16と補助排気用ポンプ
21とにより補助排気圧力まで到達させた後、主排気用
バルブ7とクライオポンプ22とにより待機状態にす
る。
The substrate 2 laminated on the carrier case is formed by using the film-forming apparatus with the glove box configured as described above.
When performing the film forming process for No. 3, first, the partition valves 5, 6, and 7 and the vent valves 12, 14 and 18 are performed.
The main exhaust valve 17 is closed. Then, the substrate 23 housed in the carrier case is carried into the pass chamber 4 through the substrate loading / unloading door 4a, and the auxiliary exhaust valve 13 and the auxiliary exhaust pump 19 assist with the inside of the pass chamber 4 being airtight. Reach exhaust pressure. At this time, most of the moisture adsorbed on the surface of the carrier case and the substrate 23 is evaporated. Further, in parallel with this, after the inside of the substrate vacuum deposition chamber 1 is made to reach the auxiliary exhaust pressure by the auxiliary exhaust valve 16 and the auxiliary exhaust pump 21, the main exhaust valve 7 and the cryopump 22 are in a standby state. To

【0016】そして、補助排気用バルブ13を閉じた後
にベントバルブ12を徐々に開放して乾燥窒素ガスによ
りパスチャンバ4内を再び大気圧とする。このときの基
板23の表面は上記したような吸着水分の気化により、
その後にグローブボックス室3で行う清浄処理に適した
状態となっている。
Then, after closing the auxiliary exhaust valve 13, the vent valve 12 is gradually opened to bring the inside of the pass chamber 4 to atmospheric pressure again with dry nitrogen gas. At this time, the surface of the substrate 23 is vaporized by the adsorbed moisture as described above,
After that, the state is suitable for the cleaning process performed in the glove box chamber 3.

【0017】次に、仕切りバルブ7を開放してキャリア
ケースに収納された基板23の1枚を、グローブボック
ス室3に搬入した後に、仕切りバルブ7を閉じてグロー
ブボックス室内を気密にする。この状態で乾燥窒素発生
装置8を作動させ、乾燥窒素供給管9及び乾燥窒素排出
管10を経由して、グローブボックス室3内が充分な窒
素雰囲気になるように乾燥窒素ガスを流通させて、基板
23に対する清浄作業を行う。そして、乾燥窒素排出管
10の途中に設けた水分分圧計11により管内の水分が
所定圧以下となったことを確認して基板23の清浄作業
を終了する。
Next, the partition valve 7 is opened and one of the substrates 23 housed in the carrier case is carried into the glove box chamber 3 and then the partition valve 7 is closed to make the glove box chamber airtight. In this state, the dry nitrogen generator 8 is operated, and the dry nitrogen gas is circulated through the dry nitrogen supply pipe 9 and the dry nitrogen discharge pipe 10 so that the inside of the glove box chamber 3 has a sufficient nitrogen atmosphere. A cleaning operation is performed on the substrate 23. Then, the water partial pressure gauge 11 provided in the middle of the dry nitrogen discharge pipe 10 confirms that the water content in the pipe is below a predetermined pressure, and the cleaning operation of the substrate 23 is completed.

【0018】さらに、この状態で仕切りバルブ6を開閉
する間に基板23を真空基板搬送室2に搬送し、気密の
真空基板搬送室2を、補助排気用バルブ15と補助排気
用ポンプ20とにより補助排気圧力に到達させる。
Further, in this state, the substrate 23 is transferred to the vacuum substrate transfer chamber 2 while the partition valve 6 is opened and closed, and the airtight vacuum substrate transfer chamber 2 is moved by the auxiliary exhaust valve 15 and the auxiliary exhaust pump 20. Reach auxiliary exhaust pressure.

【0019】そして、真空基板搬送室2の真空計2aが
所定の圧力になった時点で仕切りバルブ5を開閉し、そ
の間に基板23を成膜室1内に搬入する。そして、基板
23の搬入後、成膜室1内を成膜工程用に高真空状態に
到達させ、その状態で基板23に対して蒸着等の成膜作
業により有機エレクトロルミネッセンス素子などを製造
する。
Then, when the vacuum gauge 2a in the vacuum substrate transfer chamber 2 reaches a predetermined pressure, the partition valve 5 is opened and closed, and the substrate 23 is carried into the film forming chamber 1 in the meantime. Then, after the substrate 23 is carried in, the inside of the film forming chamber 1 is made to reach a high vacuum state for the film forming step, and in that state, an organic electroluminescence element or the like is manufactured on the substrate 23 by a film forming operation such as vapor deposition.

【0020】基板23の搬出の際には、上記した搬入作
業と逆の工程を辿れば良い。即ち、真空搬送室2を所定
の真空状態に保持し、仕切りバルブ5を開閉して、その
間に基板23を真空基板搬送室2に搬出する。そして、
補助排気用バルブ15を閉じ、ベントバルブ14を徐々
に開放して乾燥窒素ガスにより基板搬送室2内を大気圧
とする。さらに、この状態で、仕切りバルブ6を開閉し
て、その間に基板23をグローブボックス室3に搬出す
る。このとき、必要に応じて、基板に対して上記の乾燥
窒素ガスの流通による清浄作業を行うことにより、成膜
製品の清浄を行うことができる。
When carrying out the substrate 23, the steps reverse to the above-described carrying-in operation may be followed. That is, the vacuum transfer chamber 2 is maintained in a predetermined vacuum state, the partition valve 5 is opened and closed, and the substrate 23 is unloaded to the vacuum substrate transfer chamber 2 in the meantime. And
The auxiliary exhaust valve 15 is closed, and the vent valve 14 is gradually opened to bring the inside of the substrate transfer chamber 2 to atmospheric pressure with dry nitrogen gas. Further, in this state, the partition valve 6 is opened and closed, and the substrate 23 is carried out to the glove box chamber 3 in the meantime. At this time, the film-forming product can be cleaned by performing a cleaning operation on the substrate by circulating the dry nitrogen gas, if necessary.

【0021】図2は、本発明によるグローブボックス付
き成膜装置の第2の態様を示す略断面図である。
FIG. 2 is a schematic sectional view showing a second mode of the film forming apparatus with a glove box according to the present invention.

【0022】図1のグローブボックス付き成膜装置と異
なるのは、図1のパスチャンバ(前室)4が省略され、
その替りに、真空基板搬送室2に開閉扉2bが設けられ
ていることである。このような構成により、図1の成膜
装置では直線的に行っていた基板23の搬出入経路が、
真空基板搬送室2を中心にした往復経路となり、装置の
占有スペースが縮小でき装置全体がコンパクトな構成と
なる。
The difference from the film forming apparatus with a glove box of FIG. 1 is that the pass chamber (front chamber) 4 of FIG. 1 is omitted,
Instead, the vacuum substrate transfer chamber 2 is provided with an opening / closing door 2b. With such a configuration, the loading / unloading path of the substrate 23, which is linear in the film forming apparatus of FIG.
The reciprocating path is centered on the vacuum substrate transfer chamber 2, and the space occupied by the apparatus can be reduced, resulting in a compact configuration of the entire apparatus.

【0023】また、清浄を行った基板23の乾燥が充分
なことが確実であるときや成膜前環境の影響が小さい成
膜工程の場合には、基板搬送室2に基板23を搬入した
後に気密にした真空基板搬送室2内を、補助排気用バル
ブ15と補助排気用ポンプ20とにより補助排気圧力に
到達させる。そして、その後に図1の装置と同様にして
基板23を成膜室1内に搬送して成膜工程を行う。
Further, when it is certain that the cleaned substrate 23 is sufficiently dried, or in the film forming process in which the influence of the pre-film forming environment is small, after the substrate 23 is carried into the substrate transfer chamber 2. The inside of the airtight vacuum substrate transfer chamber 2 is made to reach the auxiliary exhaust pressure by the auxiliary exhaust valve 15 and the auxiliary exhaust pump 20. Then, after that, the substrate 23 is transported into the film forming chamber 1 in the same manner as the apparatus of FIG.

【0024】一方、洗浄直後の基板を用いる場合や成膜
前に手作業を要するような成膜工程の場合には、基板搬
送室2に基板23を搬入した後に、気密にした真空基板
搬送室2内を、補助排気用バルブ15と補助排気用ポン
プ20とにより補助排気圧力に到達させる。これによ
り、基板23の表面の吸着水分を気化させて除去した後
に、ベントバルブ14を徐々に開放して乾燥窒素ガスに
より大気圧とし、さらに、図1の装置と同様に、基板2
3をグローブボックス室3に搬送して乾燥窒素ガスの流
通下で清浄作業を行う。そして、その後、真空基板搬送
室2を介して成膜室1に至るまで、基板23の搬送場所
の圧力条件を段階的に良好な真空状態に移行させて成膜
工程を行う。
On the other hand, in the case of using a substrate immediately after cleaning or in a film forming process that requires manual work before film formation, after the substrate 23 is carried into the substrate transfer chamber 2, the airtight vacuum substrate transfer chamber is introduced. The inside of 2 is made to reach the auxiliary exhaust pressure by the auxiliary exhaust valve 15 and the auxiliary exhaust pump 20. As a result, after the adsorbed water on the surface of the substrate 23 is vaporized and removed, the vent valve 14 is gradually opened to bring the atmospheric pressure to dry nitrogen gas.
3 is conveyed to the glove box chamber 3 and a cleaning operation is performed under the flow of dry nitrogen gas. Then, after that, until the film formation chamber 1 is reached via the vacuum substrate transfer chamber 2, the pressure condition of the transfer location of the substrate 23 is gradually changed to a good vacuum state to perform the film formation process.

【0025】このように図2の装置においては、必要に
応じて上記した2種類の搬送形態が可能となる。
As described above, in the apparatus shown in FIG. 2, the above-described two types of carrying forms can be carried out as required.

【0026】そして、図3及び図4は、本発明によるグ
ローブボックス付き成膜装置の第3の態様を示す略断面
図とその斜視図である。
3 and 4 are a schematic sectional view and a perspective view showing a third embodiment of the film forming apparatus with a glove box according to the present invention.

【0027】本装置は、真空成膜室1とグローブボック
ス室3と脱ガス室(前室)4とがそれぞれ引出・回転機
構24と仕切りバルブ6を介した連通構造で構成されて
いる。グローブボックス室3の上面には、乾燥窒素発生
装置8に連なる乾燥窒素供給管9が接続され、また、グ
ローブボックス室3の底面には、乾燥窒素排出管10が
接続され、乾燥窒素排出管10は途中で水分分圧計11
により管内の水分を計測できるようにされている。ま
た、脱ガス室4と真空成膜室1とには、それぞれの底面
に、ベントバルブ12及び補助排気用バルブ13、補助
排気用バルブ16、主排気用バルブ17及びベントバル
ブ18が接続されている。また、補助排気用バルブ13
及び16は、それぞれ補助排気用ポンプ19及び21に
接続され、主排気用バルブ17はクライオポンプ22に
接続されている。
In this apparatus, the vacuum film forming chamber 1, the glove box chamber 3 and the degassing chamber (front chamber) 4 are constructed so as to communicate with each other via a drawing / rotating mechanism 24 and a partition valve 6. A dry nitrogen supply pipe 9 connected to the dry nitrogen generator 8 is connected to the upper surface of the glove box chamber 3, and a dry nitrogen discharge pipe 10 is connected to the bottom surface of the glove box chamber 3 and a dry nitrogen discharge pipe 10 is connected. Moisture partial pressure gauge 11
Allows the water content in the tube to be measured. A vent valve 12, an auxiliary exhaust valve 13, an auxiliary exhaust valve 16, a main exhaust valve 17 and a vent valve 18 are connected to the bottom surfaces of the degassing chamber 4 and the vacuum film forming chamber 1, respectively. There is. In addition, the auxiliary exhaust valve 13
And 16 are connected to auxiliary exhaust pumps 19 and 21, respectively, and the main exhaust valve 17 is connected to a cryopump 22.

【0028】このように構成されたグローブボックス付
き成膜装置は、主にメンテナンスに用いられる。即ち、
成膜室1内の防着板25の保守作業を行う際、最初に、
補助排気用バルブ16と主排気用バルブ17とを閉じた
状態で、ベントバルブ18を徐々に開放して乾燥窒素ガ
スにより成膜室1内を大気圧とする。
The film forming apparatus with a glove box having such a structure is mainly used for maintenance. That is,
When performing maintenance work on the deposition-inhibitory plate 25 in the film forming chamber 1, first,
With the auxiliary exhaust valve 16 and the main exhaust valve 17 closed, the vent valve 18 is gradually opened to bring the inside of the film forming chamber 1 to atmospheric pressure with dry nitrogen gas.

【0029】一方、乾燥窒素発生装置8を作動させ、乾
燥窒素供給管9及び乾燥窒素排出管10を経由して、グ
ローブボックス室3内を充分な窒素雰囲気になるように
乾燥窒素ガスを流通させておく。この状態で、引出・回
転機構24を作動させて、防着板25などをグローブボ
ックス室3内に搬送し、必要に応じて手作業により保守
や清浄作業を行い、再び成膜室1へ戻す。また交換が必
要な場合は、仕切りバルブ6を開閉してその間に防着板
25を脱ガス室4に移送し取り出す。そして、新たな防
着板を脱ガス室4に移送し、気密状態の脱ガス室4内
を、補助排気用バルブ13と補助排気用ポンプ19とに
より所定圧力に到達させた後に脱ガス工程を行って、新
たな成膜工程に対して良好な環境を維持できるようにす
る。その後、ベントバルブ12を徐々に開放して乾燥窒
素ガスにより脱ガス室4を大気圧とし、グローブボック
ス室3に再び搬送するのは上記したものと同様である。
このような作業を経て、保守作業済みとなった防着板や
新たな防着板25などの成膜室内部品を成膜室1に戻す
ことにより、保守作業時間の最短化を実現することが可
能である。
On the other hand, the dry nitrogen generator 8 is operated, and the dry nitrogen gas is circulated through the dry nitrogen supply pipe 9 and the dry nitrogen discharge pipe 10 so that the glove box chamber 3 has a sufficient nitrogen atmosphere. Keep it. In this state, the pull-out / rotation mechanism 24 is operated to convey the deposition-inhibitory plate 25 and the like into the glove box chamber 3 and, if necessary, perform manual maintenance and cleaning work, and return it to the film forming chamber 1 again. . When the replacement is required, the partition valve 6 is opened and closed, and the deposition preventive plate 25 is transferred to the degassing chamber 4 and taken out during that period. Then, a new deposition preventive plate is transferred to the degassing chamber 4, and the inside of the degassing chamber 4 in an airtight state is made to reach a predetermined pressure by the auxiliary exhaust valve 13 and the auxiliary exhaust pump 19, and then the degassing step is performed. In order to maintain a good environment for a new film forming process. Thereafter, the vent valve 12 is gradually opened to bring the degassing chamber 4 to the atmospheric pressure by using dry nitrogen gas, and the degassing chamber 4 is conveyed again to the glove box chamber 3 as in the above case.
After such work, the maintenance work time can be minimized by returning the deposition-inhibitory plate that has undergone the maintenance work, the new deposition-inhibition plate 25, and other components in the deposition chamber to the deposition chamber 1. It is possible.

【0030】また、本実施の態様においては、防着板2
5などの保守交換作業を行うことを想定したが、例え
ば、グローブボックス室3のスペースが充分にある場合
には、ここに洗浄済交換用部品等を用意しておき、破損
部品や使用済みの部品等と交換する作業工程としても良
い。
Further, in the present embodiment, the deposition preventive plate 2
Although it is assumed that maintenance and replacement work such as 5 is performed, for example, when there is sufficient space in the glove box chamber 3, prepared cleaned replacement parts and the like are prepared here, and damaged parts and used parts are used. It may be a work process for exchanging parts and the like.

【0031】なお、本実施の形態においては、実施の態
様ごとに成膜装置の装置構成を変更したが、例えば、図
1に示す装置において、成膜室1とグローブボックス室
3とを図外の引出・回転機構により直結しても良い。メ
ンテナンス時のみ、このように直結された引出・回転機
構直結機構を介して防着板25などの成膜室内部品をグ
ローブボックス室3内に搬送するようにすることで、成
膜工程時とメンテナンス工程時との用途に応じて装置を
使い分けることができる。
In the present embodiment, the apparatus configuration of the film forming apparatus is changed for each embodiment. For example, in the apparatus shown in FIG. 1, the film forming chamber 1 and the glove box chamber 3 are not shown. It may be directly connected by the pull-out / rotation mechanism of. Only during maintenance, the film deposition chamber components such as the deposition preventive plate 25 are transported into the glove box chamber 3 through the directly connected pull-out / rotation mechanism directly coupled mechanism as described above, so that the deposition process and maintenance can be performed. The device can be used properly according to the purpose of use during the process.

【0032】さらに、上記の本実施の形態においては、
各態様のいずれにおいても、清浄作業確認用に、乾燥窒
素排出管10の途中に設けた水分分圧計11を用いた
が、これに加え、同様に設置した酸素分圧計を用いるの
も有用である。
Further, in the above-mentioned embodiment,
In each of the embodiments, the water partial pressure gauge 11 provided in the middle of the dry nitrogen discharge pipe 10 was used for confirmation of the cleaning work, but in addition to this, it is also useful to use the oxygen partial pressure gauge similarly installed. .

【0033】[0033]

【発明の効果】以上の説明から明らかなように、本発明
の成膜装置は、不純物の混入防止のためグローブボック
ス室を装置構成に加え、不純物濃度を段階的に下げると
ともに、基板の搬送場所の圧力状態を段階的に良好な真
空に移行させることにより、タクトタイムの長期化や成
膜装置の寿命の短縮を防ぐことができる。したがって、
成膜工程全体の工程条件の変動や装置に対する負担が抑
制できる。
As is apparent from the above description, in the film forming apparatus of the present invention, a glove box chamber is added to the apparatus structure to prevent impurities from being mixed, the impurity concentration is gradually reduced, and the substrate transfer location is set. By gradually changing the pressure state of 1 to a good vacuum, it is possible to prevent the takt time from being lengthened and the life of the film forming apparatus from being shortened. Therefore,
It is possible to suppress variations in process conditions of the entire film forming process and a burden on the apparatus.

【0034】また、メンテナンス時の成膜室内部品の保
守及び交換作業が容易であり、保守時間の短縮に効果的
である。
Further, the maintenance and replacement work of the film-forming chamber components during the maintenance are easy, which is effective in shortening the maintenance time.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1態様の略断面図FIG. 1 is a schematic cross-sectional view of a first aspect of the present invention.

【図2】本発明の第2態様の略断面図FIG. 2 is a schematic cross-sectional view of a second aspect of the present invention.

【図3】本発明の第3態様の略断面図FIG. 3 is a schematic cross-sectional view of a third aspect of the present invention.

【図4】図3の斜視図FIG. 4 is a perspective view of FIG.

【符号の説明】[Explanation of symbols]

1 真空成膜室 2 真空基板搬送室 2b 開閉扉 3 グローブボックス室 4 前室(パスチャンバ、脱ガス室) 13 補助排気用バルブ 19 補助排気用ポンプ 23 基板 24 引出・回転機構 25 防着板(成膜装置内部品) 1 Vacuum deposition chamber 2 Vacuum substrate transfer chamber 2b open / close door 3 glove box room 4 Front chamber (pass chamber, degassing chamber) 13 Auxiliary exhaust valve 19 Auxiliary exhaust pump 23 board 24 Drawer / rotation mechanism 25 Adhesion-preventing plate (components in film forming equipment)

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】真空成膜室と、真空排気可能な前室付きの
グローブボックス室とが、真空基板搬送室を介して連通
することを特徴とするグローブボックス付き成膜装置。
1. A film forming apparatus with a glove box, wherein a vacuum film forming chamber and a glove box chamber with a front chamber that can be evacuated are connected via a vacuum substrate transfer chamber.
【請求項2】真空成膜室と、グローブボックス室とが、
基板の仕込及び取出が可能な真空基板搬送室を介して連
通することを特徴とするグローブボックス付き成膜装
置。
2. A vacuum film forming chamber and a glove box chamber,
A film forming apparatus with a glove box, which communicates with a vacuum substrate transfer chamber capable of loading and unloading substrates.
【請求項3】真空成膜室と、真空排気可能な前室付きの
グローブボックス室とが、真空成膜室内部品の引出及び
回転機構を介して直結することを特徴とするグローブボ
ックス付き成膜装置。
3. A film formation with a glove box, wherein a vacuum film formation chamber and a glove box chamber with a front chamber capable of being evacuated are directly connected via a mechanism for pulling out and rotating components in the vacuum film formation chamber. apparatus.
JP2002114192A 2002-04-17 2002-04-17 Film deposition system with glove box Pending JP2003306771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002114192A JP2003306771A (en) 2002-04-17 2002-04-17 Film deposition system with glove box

Publications (1)

Publication Number Publication Date
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Family

ID=29396101

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (8)

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Publication number Priority date Publication date Assignee Title
JP2007088295A (en) * 2005-09-22 2007-04-05 Toshiba Corp Method and device for manufacturing semiconductor
JP2009158627A (en) * 2007-12-26 2009-07-16 Tokyo Electron Ltd Vacuum apparatus, vacuum treatment system and pressure controlling method of vacuum chamber
JP2010111916A (en) * 2008-11-06 2010-05-20 Ulvac Japan Ltd Vacuum deposition system, vapor deposition source, film deposition chamber and method for exchanging vapor deposition vessel
WO2013125159A1 (en) * 2012-02-20 2013-08-29 新明和工業株式会社 Conveyance system
CN103290363A (en) * 2012-02-24 2013-09-11 国家纳米科学中心 Integrated device for preparing organic film device on flexible substrate
WO2015037315A1 (en) * 2013-09-10 2015-03-19 株式会社島津製作所 Film formation device and film formation method
JP2015206576A (en) * 2014-04-23 2015-11-19 旭硝子株式会社 Degasification device
JP2016014175A (en) * 2014-07-02 2016-01-28 株式会社アルバック Film deposition apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088295A (en) * 2005-09-22 2007-04-05 Toshiba Corp Method and device for manufacturing semiconductor
JP2009158627A (en) * 2007-12-26 2009-07-16 Tokyo Electron Ltd Vacuum apparatus, vacuum treatment system and pressure controlling method of vacuum chamber
JP2010111916A (en) * 2008-11-06 2010-05-20 Ulvac Japan Ltd Vacuum deposition system, vapor deposition source, film deposition chamber and method for exchanging vapor deposition vessel
WO2013125159A1 (en) * 2012-02-20 2013-08-29 新明和工業株式会社 Conveyance system
CN103290363A (en) * 2012-02-24 2013-09-11 国家纳米科学中心 Integrated device for preparing organic film device on flexible substrate
WO2015037315A1 (en) * 2013-09-10 2015-03-19 株式会社島津製作所 Film formation device and film formation method
CN105555995A (en) * 2013-09-10 2016-05-04 株式会社岛津制作所 Film formation device and film formation method
JPWO2015037315A1 (en) * 2013-09-10 2017-03-02 株式会社島津製作所 Film forming apparatus and film forming method
CN105555995B (en) * 2013-09-10 2017-11-07 株式会社岛津制作所 Film formation device and film build method
JP2015206576A (en) * 2014-04-23 2015-11-19 旭硝子株式会社 Degasification device
JP2016014175A (en) * 2014-07-02 2016-01-28 株式会社アルバック Film deposition apparatus

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