WO2012077659A1 - 表示デバイス製造装置、表示デバイスの製造方法、及び表示デバイス - Google Patents
表示デバイス製造装置、表示デバイスの製造方法、及び表示デバイス Download PDFInfo
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- WO2012077659A1 WO2012077659A1 PCT/JP2011/078133 JP2011078133W WO2012077659A1 WO 2012077659 A1 WO2012077659 A1 WO 2012077659A1 JP 2011078133 W JP2011078133 W JP 2011078133W WO 2012077659 A1 WO2012077659 A1 WO 2012077659A1
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- sealing film
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- film forming
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F13/00—Illuminated signs; Luminous advertising
- G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
- G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
Definitions
- the present invention relates to a display device manufacturing apparatus, a display device manufacturing method, and a display device for forming a sealing film for sealing a display element.
- Organic EL elements using electroluminescence (EL) have been developed as display elements.
- Organic EL devices have advantages such as lower power consumption than cathode ray tubes and the like, self-luminous emission, and superior viewing angle compared to liquid crystal displays (LCDs). .
- a display element such as an organic EL element is weak against moisture, and the moisture that has entered from the defective portion of the element reduces the light emission luminance or generates a non-light emitting region called a dark spot.
- a wet sealing film is formed (hereinafter, an organic EL element will be described as an example.
- a structure in which a sealing film is formed on the surface of the organic EL element is referred to as an organic EL device).
- an inorganic layer made of an inorganic material such as silicon nitride (hereinafter referred to as SiN) or aluminum oxide is used.
- SiN silicon nitride
- Al oxide aluminum oxide
- a sealing film using a laminated structure of an inorganic layer and an organic layer made of an organic material such as a UV curable resin has been proposed (for example, Patent Documents 1 to 3).
- the present invention has been made in view of such circumstances, and can be temporarily stored by exposing a display device being manufactured to the atmosphere, and the final display device having various film structures according to required performance.
- a display device manufacturing apparatus, a display device manufacturing method, and a display device for manufacturing a display device that can obtain a product and achieve good throughput are provided.
- the display device manufacturing apparatus is a display device manufacturing apparatus that manufactures a display device by forming a sealing film for sealing the display element on the display element.
- First sealing film forming means for forming a first sealing film
- second sealing film forming means for forming a second sealing film on the formed first sealing film
- the first sealing film Storage means for storing the formed display element for a predetermined time; means for transporting the display element on which the first sealing film is formed from the first sealing film forming means to the storage means; and the storage means And a means for transporting the display element stored by the storage means to the second sealing film forming apparatus.
- the display device manufacturing method includes a display device manufacturing method in which a sealing film for sealing the display element is formed on the display element to manufacture the display device.
- a first sealing film forming step of forming a first sealing film on the surface of the display element under reduced pressure, and storing the display element on which the first sealing film is formed from the first sealing film forming means A step of transporting the display element to the means, a step of storing the transported display element by the storage means for a predetermined time, a step of transporting the stored display element to the second sealing film forming means, and the second sealing And a second sealing film forming step of forming a second sealing film on the first sealing film of the conveyed display element by the film forming means.
- a display device according to the present invention is manufactured by the above-described display device manufacturing method.
- a first sealing film of a thin film in which moisture permeation resistance within a predetermined time is ensured is formed on the surface of a display element in a reduced pressure space, and a temporary sealing body (hereinafter, referred to as a display device).
- a temporary sealing body) is prepared, and then taken out to the atmospheric pressure space and temporarily stored, and various second sealing films can be formed for each of them depending on the use of the display device.
- a plurality of film forming apparatuses are used simultaneously or a plurality of film forming apparatuses connected in series are used to sequentially form the temporary sealing body.
- the display device temporarily forms a first sealing film, which is a thin film having moisture permeability resistance within a predetermined time, on the surfaces of a plurality of display elements formed on a substrate in a reduced pressure space.
- a 2nd sealing film is separately formed on a 1st sealing film.
- the material and layer structure (either single layer or multiple layers) of the first sealing film and the second sealing film are appropriately set according to moisture permeation resistance required based on the use of the display device.
- the second sealing film is not limited to the film formation, and the gas barrier substrate may be bonded to the surface of the temporary sealing body as the second sealing film. Furthermore, in the display device according to the present invention, after the second sealing film is formed on the first sealing film of the temporary sealing body, the gas barrier substrate is disposed on the surface of the second sealing film via an adhesive layer. You may decide to join.
- the material for the first sealing film examples include hydrocarbons such as paraffin, organic materials such as amorphous hydrocarbon (hereinafter referred to as ⁇ -CH x ), inorganic materials such as silicon nitride (SiN), and silicon nitride oxide (SiON). Materials.
- the first sealing film may be composed of a plurality of layers, but when the display element is made of an organic material, it is formed immediately above the display element from the viewpoint that no chemical reaction occurs with the display element.
- the film to be formed is preferably made of an inorganic material.
- the material of the second sealing film include the organic materials, for example, inorganic materials such as SiN, SiON, Al, and aluminum oxide (Al 2 O 3 ).
- the second sealing film may be composed of a plurality of layers, it is preferable that the uppermost layer of the second sealing film is made of an inorganic material from the viewpoint of better moisture permeation resistance.
- the SiN film, the SiON film, and the ⁇ -CH x film are formed by plasma CVD, the hydrocarbon film is formed by physical vapor deposition (PVD), and the Al film and the Al 2 O 3 film are formed by sputtering. Be filmed.
- the thickness of the first sealing film is a thickness that can ensure moisture permeability resistance when the temporary sealing body is taken out from the decompression space where the first sealing film is formed into the atmospheric pressure space and temporarily stored. Good. That is, the thickness may be any thickness that does not cause moisture absorption deterioration due to the atmosphere. An appropriate thickness can be set according to the material of the membrane, the time for temporary storage in the atmospheric pressure space, and the like.
- the thickness of the second sealing film can be appropriately set according to the moisture resistance required based on the use of the display device. In the case where the second sealing film is formed directly on the first sealing film by CVD, moisture attached to the surface of the first sealing film is removed by plasma treatment with an inert gas such as argon. Also good. In this case, the adhesion between the first sealing film and the second sealing film is improved, and the sealing performance can be improved.
- the display device manufacturing apparatus includes a temporary sealing body forming portion that obtains a temporary sealing body by forming a first sealing film on the surface of the display element under reduced pressure, and a temporary sealing body forming portion.
- 1 means for taking out the temporary sealing body from the sealing film forming apparatus, means for temporary storage (temporary sealing body storage part), means for carrying the stored temporary sealing body, and temporary sealing by the means
- a second sealing film forming unit that receives the stop and forms a second sealing film on the surface of the temporary sealing body to obtain a display device.
- the temporary sealing body forming part and the second sealing film forming part are separated.
- the display device manufacturing apparatus may include a plurality of second sealing film forming units of the same type.
- temporary sealing is performed from the temporary sealing body storage unit to a plurality of second sealing film forming units arranged in parallel.
- FIG. 1 is a side sectional view showing an organic EL device 101 as a display device according to Embodiment 1 of the present invention
- FIG. 2 is an explanatory view conceptually showing a method for manufacturing the organic EL device 101.
- the entire layers of the organic EL element 12 as a display element are formed by laminating an anode layer 11 a made of, for example, an ITO (Indium Tin Oxide) film, a light emitting layer, and a cathode layer 12 g on a glass substrate 11.
- the first sealing film 13 is sealed, and the second sealing film 14 is further sealed with the first sealing film 13.
- the first sealing film 13 is preferably made of an inorganic material from the viewpoint that a chemical reaction with the organic EL element 12 does not occur.
- inorganic materials include SiN and SiON.
- the material of the second sealing film 14 include inorganic materials such as SiN and SiON, and organic materials such as hydrocarbon and ⁇ -CH x . It is preferable to use an inorganic material from the viewpoint of better moisture permeation resistance.
- the SiN film is formed by a plasma CVD method.
- the anode layer 11a is a transparent electrode that can transmit light generated in the light emitting layer, for example, an ITO film.
- the organic layer of the organic EL element 12 has a six-layer structure in which, for example, a first layer to a sixth layer are stacked by vacuum deposition.
- the first layer is a hole injection layer 12a
- the second layer is a hole transport layer 12b
- the third layer is a blue light emitting layer 12c
- the fourth layer is a red light emitting layer 12d
- the fifth layer is a green light emitting layer 12e
- the sixth layer is an electron.
- This is the transport layer 12f.
- or 6th layer demonstrated here is an example.
- the cathode layer 12g is a film formed of silver, aluminum, an aluminum alloy, a lithium aluminum alloy, magnesium, a silver alloy, or the like formed by vapor deposition.
- the organic EL device 101 When manufacturing the organic EL device 101, first, after forming the organic EL element 12 on the glass substrate 11 on which the anode layer 11a is formed as shown in FIG. 2A, the anode layer 11a is formed as shown in FIG. 2B. A first sealing film 13 is formed on the surfaces of the glass substrate 11 and the organic EL element 12. Thereby, the temporary sealing body 102 is obtained.
- the thickness of the first sealing film 13 is a thickness that can ensure moisture permeability resistance when the temporary sealing body 102 is taken out from the reduced pressure space where the first sealing film 13 is formed into the atmospheric pressure space and temporarily stored. If it is. That is, the thickness may be any thickness that does not cause moisture absorption deterioration by the atmosphere. An appropriate thickness can be set according to the material of the membrane, the time for temporary storage in the atmospheric pressure space, and the like. When the first sealing film 13 is made of SiN, which is an inorganic material, as in the present embodiment, the thickness may be set to about 50 to 500 nm when temporarily stored for about 24 hours.
- the second sealing film 14 is formed on the first sealing film 13 of the temporary sealing body 102 temporarily stored. Thereby, the organic EL device 101 is obtained.
- the thickness of the 2nd sealing film 14 is suitably set according to the moisture permeation resistance etc. which are requested
- FIG. 3 is a block diagram schematically showing a configuration example of the organic EL device manufacturing apparatus 2 according to Embodiment 1 of the present invention.
- the organic EL device manufacturing apparatus 2 according to the present embodiment includes a loader 21, a load lock chamber (hereinafter referred to as LL) 22, a film forming apparatus 23, a transfer module (which are connected in series along the conveyance direction of the glass substrate 11. (Hereinafter referred to as TM) 24, electrode forming device 25, TM 26, first sealing film forming device 27, LL 28, temporary sealing body storage unit 29, and three second sealing film forming units 6.
- the loader 21, LL 22, film forming device 23, TM 24, electrode forming device 25, TM 26, and first sealing film forming device 27 constitute a temporary sealing body forming unit.
- the second sealing film forming unit 6 includes a loader 61, an LL 62, and a SiN film forming apparatus 30 that forms a SiN film by plasma CVD as an example of a second sealing film forming apparatus.
- the SiN film forming apparatus is expressed as SiN in the drawing.
- the number of the 2nd sealing film formation part 6 (SiN film formation apparatus 30) with which the organic EL device manufacturing apparatus 2 is provided is not limited to three, What is necessary is just plural.
- the loader 21, LL22, film forming device 23, TM24, electrode forming device 25, TM26, first sealing film forming device 27, and LL28 are limited to the case where they are connected in series along the transport direction. Instead, it is only necessary to be connected in-line (consistent with vacuum).
- the film forming device 23, the electrode forming device 25, and the first sealing film forming device 27 may be disposed around the common transfer chamber.
- the loader 21 is an apparatus for carrying the glass substrate 11, for example, the glass substrate 11 on which the anode layer 11 a has been previously formed, into the organic EL device manufacturing apparatus 2.
- LL22, TM24, TM26, and LL28 are apparatuses for delivering the glass substrate 11 between the processing apparatuses.
- the film forming apparatus 23 forms the hole injection layer 12a, the hole transport layer 12b, the blue light emitting layer 12c, the red light emitting layer 12d, the green light emitting layer 12e, and the electron transport layer 12f on the glass substrate 11 by vacuum deposition. It is a device.
- the electrode forming device 25 forms the cathode layer 12g on the electron transport layer 12f by evaporating or sputtering, for example, silver, aluminum, aluminum alloy, lithium aluminum alloy, magnesium and silver alloy using a pattern mask. It is a device to do.
- the first sealing film forming apparatus 27 is an apparatus for sealing various films formed on the glass substrate 11 by forming the first sealing film 13 such as an inorganic film by CVD or vapor deposition, for example. .
- the glass substrate 11 is carried into the LL 22 from the loader 21 through one gate valve, then the inside of the LL 22 is decompressed, and the glass substrate 11 is carried out to the film forming apparatus 23 through the other gate valve.
- the glass substrate 11 is sequentially transported in the state where the film forming apparatus 23, TM24, the electrode forming apparatus 25, TM26, and the first sealing film forming apparatus 27 are held in a reduced pressure state, and the organic EL element as described above.
- the first sealing film 13 is formed on the surface of 12 and the temporary sealing body 102 is obtained.
- the first sealing film forming device 27, the LL 28, and the temporary sealing body storage unit 29 are connected via two gate valves.
- the temporary sealing body storage unit 29 includes a transport unit including a transport device such as a robot arm, and a cassette mounting unit that mounts and connects the cassettes.
- the cassette is a transport container that stores a plurality of integrated temporary sealing bodies 102 (that is, one glass substrate 11) in a horizontal state.
- the inside of the LL 28 is depressurized, the gate valve with the first sealing film forming apparatus 27 is opened, and the temporary sealing body 102 is carried out from the first sealing film forming apparatus 27 to the LL 28.
- the LL 28 is opened to the atmospheric pressure state, the gate valve between the temporary sealing body storage unit 29 is opened, and the temporary sealing body 102 is moved from the LL 28 into the temporary sealing body storage unit 29 by the transfer device. It is conveyed and accommodated in the cassette of the cassette placement unit.
- the temporary sealing body storage unit 29 may include a temporary sealing body placement section that places the temporary sealing bodies 120 one by one without including the cassette placement section.
- the temporary sealing body storage unit 29 is hermetically sealed and held in a pressurized state by a reduced pressure state or nitrogen sealing, and the temporary sealing body storage unit 29 is temporarily sealed from the first sealing film forming device 27 without opening the LL 28 to the atmosphere. You may decide to carry out the stop body 102 to the temporary sealing body storage part 29.
- FIG. Further, the inside of the cassette may be nitrogen-filled instead of nitrogen-sealed inside the temporary sealing body storage unit 29.
- the organic EL device manufacturing apparatus 2 includes a temporary sealing body storage unit other than the temporary sealing body storage unit 29, and the temporary sealing body 102 is supplied from the temporary sealing body storage unit 29 to the AGV (Auto Guided Vehicle), a robot, a belt conveyor, and a temporary sealing body 102 may be transported to the temporary sealing body storage unit by a transport device such as a gas levitation transport device that includes gas ejection means for floating and moving the temporary sealing body 102. .
- the temporary sealant storage unit 29 or the temporary sealant 102 temporarily stored in the temporary sealant storage unit is transported by AGV, robot, belt conveyor, gas levitation transport device, etc.
- the second sealing film forming unit 6 is transported to the place where it is installed, carried into the loader 61, and carried through the LL 62 into the SiN film forming apparatus 30 maintained in a reduced pressure state.
- FIG. 4 shows a configuration example when the first sealing film forming apparatus 27 is a SiN film forming apparatus (plasma CVD apparatus) 3 (hereinafter referred to as a CVD apparatus) that forms a SiN film as a first sealing film. It is the sectional side view shown typically.
- the CVD apparatus 3 is, for example, an RLSA (Radial Line Slot Antenna) type, and includes a substantially cylindrical processing chamber 301 that is airtight and grounded.
- the processing chamber 301 is made of, for example, aluminum, and has a flat plate-shaped annular bottom wall 301a in which a circular opening 310 is formed in a substantially central portion, and a side wall provided around the bottom wall 301a, and an upper portion thereof. It is open.
- a cylindrical liner made of ceramics such as quartz or Al 2 O 3 may be provided on the inner periphery of the processing chamber 301.
- An annular gas introducing member 315 is provided on the side wall of the processing chamber 301, and a processing gas supply system 316 is connected to the gas introducing member 315.
- the gas introduction member 315 is arranged in a shower shape, for example.
- a predetermined processing gas is introduced into the processing chamber 301 from the processing gas supply system 316 via the gas introduction member 315.
- the processing gas an appropriate one is used according to the type and content of the plasma processing. For example, when forming a SiN film by plasma CVD, monosilane (SiH 4 ) gas, ammonia (NH 3 ) gas, nitrogen (N 2 ) gas, or the like is used.
- a carry-in port 325 and a carry-out port 355 for carrying in and out the glass substrate 11 with the transfer modules 26 and 28 adjacent to the CVD apparatus 3, and this carry-in port 325.
- Gate valves 326 and 356 for opening and closing the carry-out port 355 are provided on the side wall of the processing chamber 301.
- the bottom wall 301 a of the processing chamber 301 is provided with a bottomed cylindrical exhaust chamber 311 protruding downward so as to communicate with the opening 310.
- An exhaust pipe 323 is provided on the side wall of the exhaust chamber 311, and an exhaust apparatus 324 including a high-speed vacuum pump is connected to the exhaust pipe 323.
- the exhaust device 324 By operating the exhaust device 324, the gas in the processing chamber 301 is uniformly discharged into the space 311 a of the exhaust chamber 311 and is exhausted through the exhaust pipe 323. Therefore, the inside of the processing chamber 301 can be decompressed at a high speed to a predetermined degree of vacuum, for example, 0.133 Pa.
- a guide 304 for holding the glass substrate 11 is provided at the outer edge of the sample stage 302.
- a heater power source 306 for heating the glass substrate 11 and a DC power source 308 for electrostatic adsorption are connected to the sample stage 302.
- An opening formed in the upper part of the processing chamber 301 is provided with a ring-shaped support portion 327 along its peripheral edge.
- a disk-shaped dielectric window 328 made of a dielectric material such as quartz or Al 2 O 3 ⁇ and transmitting microwaves is hermetically provided on the support portion 327 through a seal member 329.
- a disk-shaped slot plate 331 is provided above the dielectric window 328 so as to face the sample table 302.
- the slot plate 331 is locked to the upper end of the side wall of the processing chamber 301 while being in surface contact with the dielectric window 328.
- the slot plate 331 is made of a conductor, for example, a copper plate or an aluminum plate whose surface is gold-plated, and has a configuration in which a plurality of microwave radiation slots 332 are formed in a predetermined pattern. That is, the slot plate 331 constitutes an RLSA antenna.
- the microwave radiation slots 332 have, for example, a long groove shape, and are disposed close to each other so that a pair of adjacent microwave radiation slots 332 are substantially L-shaped.
- the plurality of microwave radiation slots 332 forming a pair may be arranged concentrically. The length and arrangement interval of the microwave radiation slots 332 are determined according to the wavelength of the microwave.
- a dielectric plate 333 having a dielectric constant larger than that of a vacuum is provided on the upper surface of the slot plate 331 so as to be in surface contact with each other.
- the dielectric plate 333 has a flat dielectric disk portion.
- a hole is formed in a substantially central portion of the dielectric disk portion.
- a cylindrical microwave incident portion protrudes from the peripheral edge of the hole substantially perpendicular to the dielectric disk portion.
- a disc-shaped shield lid 334 is provided on the upper surface of the processing chamber 301 so as to cover the slot plate 331 and the dielectric plate 333.
- the shield lid 334 is made of a metal such as aluminum or stainless steel.
- a space between the upper surface of the processing chamber 301 and the shield lid 334 is sealed with a seal member 335.
- a lid-side cooling water flow path 334a is formed inside the shield lid 334. By allowing cooling water to flow through the lid-side cooling water flow path 334a, a slot plate 331, a dielectric window 328, and a dielectric plate 333 are formed.
- the shield lid 334 is configured to be cooled.
- the shield lid 334 is grounded.
- An opening 336 is formed in the center of the upper wall of the shield lid 334, and a waveguide 337 is connected to the opening.
- the waveguide 337 has a circular cross-section coaxial waveguide 337a extending upward from the opening 336 of the shield lid 334, and a horizontal cross-section extending in the horizontal direction connected to the upper end of the coaxial waveguide 337a.
- the microwave generator 339 is connected to the end of the rectangular waveguide 337b through a matching circuit 338.
- a microwave generated by the microwave generator 339 for example, a microwave having a frequency of 2.45 GHz, is propagated to the slot plate 331 through the waveguide 337.
- a mode converter 340 is provided at the end of the rectangular waveguide 337b on the connection portion side with the coaxial waveguide 337a.
- the coaxial waveguide 337 a includes a cylindrical coaxial outer conductor 342 and a coaxial inner conductor 341 disposed along the center line of the coaxial outer conductor 342, and the lower end portion of the coaxial inner conductor 341 has a slot plate 331. Fixed in the center of the connection. The microwave incident portion of the dielectric plate 333 is fitted in the coaxial waveguide 337a.
- the CVD apparatus 3 includes a process controller 350 that controls each component of the CVD apparatus 3.
- a user interface 351 including a keyboard for a command input by a process manager to manage the CVD apparatus 3 and a display for visualizing and displaying the operation status of the CVD apparatus 3.
- the process controller 350 stores a control unit for realizing various processes executed by the CVD apparatus 3 under the control of the process controller 350, a process control program in which process condition data and the like are recorded. Is connected.
- the process controller 350 calls and executes an arbitrary process control program according to an instruction from the user interface 351 from the storage unit 352, and a desired process is performed in the CVD apparatus 3 under the control of the process controller 350.
- the SiN film forming apparatus 30 has the same structure as the SiN film forming apparatus 3.
- the operation of the organic EL device manufacturing apparatus 2 configured as described above will be briefly described.
- the glass substrate 11 on which the anode layer 11a is formed in advance is carried into the film forming apparatus 23 via the loader 21 and LL22.
- the organic EL element 12 is formed on the glass substrate 11.
- it is carried into the electrode forming apparatus 25 by TM24, and the cathode layer 12g is formed.
- the glass substrate 11 is transported to the first sealing film forming device 27 by TM 26, and the first sealing film 13 is formed on the surface of the organic EL element 12 by the first sealing film forming device 27.
- a stationary body 102 is obtained.
- the temporary sealing body 102 is taken out by the LL 28 from the reduced pressure space to the temporary sealing body storage unit 29 in the atmospheric pressure space. After the temporary sealing body 102 is temporarily stored in the temporary sealing body storage unit 29 in a state where moisture permeability is ensured by the first sealing film 13, for example, a predetermined number of temporary sealing bodies 102 are accumulated.
- the wafer is transferred to the installation location of each SiN film forming apparatus 30 by the above-described transfer apparatus at a timing such as waiting.
- the temporary sealing body 102 is carried into the SiN film forming apparatus 30 via the loader 61 and the LL 62, and the second sealing film 14 is formed on the temporary sealing body 102.
- the film thickness of the first sealing film 13 is 500 nm or less, and the film formation time is short.
- a SiN film of 1000 nm is formed as the second sealing film 14, it takes about 40 minutes for each organic EL element.
- a plurality of SiN film forming apparatuses 30 are used. Since the SiN film is formed substantially simultaneously, the amount of film formation per unit time increases, and the throughput can be improved as a whole without being delayed in the sealing film forming process as in the prior art.
- FIG. 5 is an explanatory view conceptually showing a method of manufacturing the organic EL device 104 as a display device according to Embodiment 2 of the present invention.
- the temporary sealing body 103 of the organic EL device 104 has two layers of the first sealing film.
- the first sealing film is composed of a first inorganic film 13 made of an inorganic material and a first organic film 15 made of an organic material.
- the inorganic material include SiN and SiON.
- the organic material include hydrocarbons, ⁇ -CH x and the like.
- the first inorganic film 13 is made of a SiN film and the first organic film 15 is paraffin represented by a molecular formula C x H y (x is 20 or more) as a hydrocarbon will be described.
- the first organic film 15 is a hydrocarbon film, it is formed by vapor deposition (vacuum physical) as described later.
- the first organic film 15 is an ⁇ -CH x film, it can be formed by a plasma CVD method using C 4 H 6 , CH 4 , C 2 H 2 or the like as a hydrocarbon gas.
- the organic EL device 104 When manufacturing the organic EL device 104, first, after forming the organic EL element 12 on the glass substrate 11 on which the anode layer 11a is formed as shown in FIG. 5A, the anode layer 11a is formed as shown in FIG. 5B. A first inorganic film 13 is formed on the surfaces of the glass substrate 11 and the organic EL element 12. Furthermore, as shown in FIG. 5C, the temporary sealing body 103 is obtained by forming the first organic film 15 on the first inorganic film 13.
- the thickness of the first sealing film is set to a thickness that can ensure moisture permeability when the temporary sealing body 103 is taken out from the reduced pressure space where the first sealing film is formed into the atmospheric pressure space and temporarily stored. Is done. That is, the thickness may be any thickness that does not cause moisture absorption deterioration.
- An appropriate thickness can be set according to the material of the membrane, the time for temporary storage in the atmospheric pressure space, and the like. As an example, the thickness when the first inorganic film 13 is made of SiN is about 50 nm to 500 nm, and the thickness when the first organic film 15 is made of paraffin is about 100 nm to 1000 nm.
- a second inorganic film 16 made of, for example, a SiN film as a second sealing film is formed on the first organic film (hydrocarbon film) 15 of the temporarily sealed body 103 temporarily stored. By forming it, the organic EL device 104 is obtained.
- FIG. 6 is a block diagram schematically showing a configuration example of the organic EL device manufacturing apparatus 201 according to Embodiment 2 of the present invention.
- the first sealing film forming apparatus 27 is configured by arranging the SiN film forming apparatus 3, TM4, which is a plasma CVD apparatus, and the hydrocarbon film forming apparatus 5, which is a vapor deposition apparatus, in series. .
- the temporary sealing body 103 obtained by the first sealing film forming apparatus 27 is taken out to the temporary sealing body storage unit 29 in the atmospheric pressure space for each body.
- the temporary sealing body storage unit 29 in the atmospheric pressure space for each body.
- FIG. 7 is a side sectional view schematically showing one configuration example of the hydrocarbon film forming apparatus (evaporation apparatus) 5.
- the vapor deposition apparatus 5 accommodates the glass substrate 11 and includes a processing chamber 501 for performing vapor deposition, reflow treatment, and curing treatment of the first organic film (hydrocarbon film) 15 on the glass substrate 11 therein.
- the processing chamber 501 has a hollow, substantially rectangular parallelepiped shape whose longitudinal direction is the transport direction, and is made of aluminum, stainless steel, or the like.
- a carry-in port 511 and a carry-out port 515 for carrying the glass substrate 11 into and out of the process chamber 501 are formed on the surfaces on both ends in the longitudinal direction of the treatment chamber 501, and the carry-in port 511 and the carry-out port are formed by the gate valves 512 and 516. 515 is configured to open and close.
- An exhaust pipe 513 is provided at an appropriate location in the processing chamber 501, and an exhaust apparatus 514 including a high-speed vacuum pump is connected to the exhaust pipe 513. By operating the exhaust device 514, the inside of the processing chamber 501 can be reduced to a predetermined pressure, for example, 10 ⁇ 2 Pa.
- the transfer device 502 that transfers the glass substrate 11 carried into the processing chamber 501 is installed.
- the transfer device 502 includes a guide rail provided along the longitudinal direction at the bottom of the processing chamber 501, and a moving member that is guided by the guide rail and provided so as to be movable in the transfer direction, that is, the longitudinal direction.
- a support base 503 that supports the glass substrate 11 substantially horizontally is provided at the upper end of the moving member.
- An electrostatic chuck that holds the glass substrate 11, a heater that keeps or heats the temperature of the glass substrate 11, a refrigerant tube, and the like are provided inside the support base 503.
- the support base 503 is configured to move by a linear motor.
- a substrate processing head 504 is provided in the upper portion of the processing chamber 501 and substantially in the center in the transport direction.
- the substrate processing head 504 includes a vapor deposition head 541 that forms the first organic film 15 on the glass substrate 11 by vacuum vapor deposition, and the first organic film 15 formed by irradiating the glass substrate 11 with infrared rays.
- An infrared irradiation head 542 that softens or melts the glass substrate 11 and a curing processing head 543 that cures hydrocarbons by irradiating the glass substrate 11 with an electron beam or ultraviolet rays.
- the apparatus that performs all of the vapor deposition, reflow process, and curing process of the first organic film 15 is exemplified, but the vapor deposition apparatus that performs the vapor deposition of the first organic film 15 and the reflow process that performs the reflow process.
- the reflow treatment is performed on the first organic film 15, the surface is flattened, so that it can be buried when a defective portion is generated, and the second inorganic film has no defect on the first organic film 15. Since the film
- the vapor deposition head 541 is a mechanism that blows off the vapor of the hydrocarbon material made of paraffin transported through the transport pipe toward the glass substrate 11 accommodated in the processing chamber 501.
- a vapor generation unit 545 disposed outside the processing chamber 501 is connected to the vapor deposition head 541 via a transfer pipe.
- the steam generating unit 545 includes, for example, a stainless steel container and a heating mechanism disposed inside the container.
- the heating mechanism has a container that can contain the hydrocarbon material, and is configured to heat the hydrocarbon material with electric power supplied from a power source. The heating of the hydrocarbon material is performed, for example, by heating with an electric resistor embedded in the container.
- the container is connected to a carrier gas supply pipe for supplying a carrier gas made of a rare gas such as an inert gas or argon (Ar) to the glass substrate 11, and is supplied to the container from the carrier gas supply pipe.
- a carrier gas made of a rare gas such as an inert gas or argon (Ar)
- the vapor of the hydrocarbon material is supplied from the steam generation unit 545 to the vapor deposition head 541 through the transport pipe.
- flow rate adjustment valves 544 and 546 for adjusting the supply amount of the carrier gas are provided.
- the flow rate adjusting valves 544 and 546 are, for example, electromagnetic valves, and the opening / closing operation of the flow rate adjusting valves 544 and 546 is configured to be controlled by a process controller 550 described later.
- the infrared irradiation head 542 transmits infrared rays to substantially the entire surface of the first organic film 15 formed on the glass substrate 11 (that is, the region where the sealing film 13 is to be formed) by conveying the glass substrate 11 by the support base 503.
- An infrared lamp arranged to be irradiated. It is sufficient for the intensity of infrared rays emitted from the infrared lamp to be able to soften or melt the first organic film 15 formed on the glass substrate 11. More preferably, it may be configured to irradiate infrared rays having such intensity that the organic EL element 12 remains in a temperature range that does not deteriorate even when the infrared rays are continuously irradiated.
- a power supply for supplying power is connected to the infrared lamp, and the power supply is configured to be controlled by a process controller 550.
- the process controller 550 controls the supply of power to the infrared lamp to heat the first organic film 15 to a temperature at which the first organic film 15 is softened or melted and the organic EL element 12 is not deteriorated.
- the infrared irradiation head 542 is an example of a unit that heats the first organic film 15.
- a hot plate or the like for heating the first organic film 15 may be provided on the support base 503.
- the curing processing head 543 is configured such that, for example, when the glass substrate 11 is transported by the support base 503, electrons are applied to substantially the entire surface of the first organic film 15 formed on the glass substrate 11 (that is, the region where the sealing film 13 is to be formed).
- the electron gun is arranged to be irradiated with a line, and the operation of the electron gun is controlled by a process controller 550.
- the curing head 543 may be provided with an ultraviolet lamp that irradiates the glass substrate 11 with ultraviolet rays.
- the vapor deposition apparatus 5 includes a process controller 550 that controls each component of the vapor deposition apparatus 5.
- a process controller 550 Connected to the process controller 550 is a user interface through which a process manager performs command input operations and the like in order to manage the vapor deposition apparatus 5.
- the process controller 550 stores a control unit for realizing various processes executed by the vapor deposition apparatus 5 under the control of the process controller 550, a process control program storing process condition data, and the like. Is connected.
- the process controller 550 calls and executes an arbitrary process control program in accordance with an instruction from the user interface from the storage unit 552, and performs desired processing in the vapor deposition apparatus 5 under the control of the process controller 550.
- the organic EL device manufacturing apparatus 201 configured as described above, temporary sealing in which the organic EL element 12 is sealed with the first inorganic film 13 and the first organic film 15 by the first sealing film forming apparatus 27.
- a body 103 is obtained.
- the temporary sealing body 103 is taken out from the decompression space to the temporary sealing body storage unit 29 in the atmospheric pressure space by the LL 28.
- the temporary sealing body 103 is temporarily stored in the temporary sealing body storage unit 29 in a state in which moisture permeation resistance is ensured by the first inorganic film 13 and the first organic film 15, and then the above-described transfer device at a timing. Is transferred to each SiN film forming apparatus 30, the second inorganic film 16 is formed on each temporary sealing body 103, and the organic EL device 104 is obtained.
- the thickness of the first inorganic film 13 is 100 nm or less and is thin. Further, although the deposition rate of the first organic film 15 depends on the type of hydrocarbon material, it can be deposited in a short time even when it is deposited to a thickness of 500 nm, for example.
- the first organic film 15 is an ⁇ -CH x film
- the film formation is performed using a CVD apparatus similar to the SiN film forming apparatus of FIG. 4 and a hydrocarbon gas such as C 4 H 6 , CH 4 , C 2 H 2 or the like. Is used as a processing gas, but the deposition rate is nearly 10 times that of the SiN film, and the film can be formed in a short time like the hydrocarbon film.
- various second sealing films can be formed for each of them depending on the use of the organic EL device 104.
- the first sealing film has a two-layer structure
- the second inorganic film is more than the second inorganic film 14 of the first embodiment in which the first sealing film is a single layer.
- the thickness of 16 can be reduced. Accordingly, the throughput can be improved as a whole.
- FIG. 8 is a block diagram schematically showing a configuration example of the organic EL device manufacturing apparatus 202 according to Embodiment 3 of the present invention.
- the organic EL device manufacturing apparatus 202 includes three SiN film forming apparatuses 31, 33, and 35 arranged in series as an example of a second sealing film forming apparatus.
- the temporary sealing body 102 temporarily stored in the temporary sealing body storage unit 29 is taken out by the transfer device and is then used as the SiN film forming apparatus 31. And are sequentially transferred to the SiN film forming apparatuses 33 and 35 using the TMs 32 and 34.
- a single-layer SiN film can be formed as the second sealing film. Therefore, when the above-described temporary sealing body 102 is transported, the second inorganic film 14 is formed in order of 1/3 amount in the thickness direction. For example, when the second inorganic film 14 made of the SiN film is formed with a thickness of 1000 nm on the first inorganic film 13 made of the SiN film, each SiN film forming apparatus forms a film with a thickness of about 330 nm. By transporting the temporary sealing body 102, throughput can be improved.
- the present invention is not limited to this.
- the second inorganic film 16 may be formed on the surface of the temporary sealing body 103 in which the first sealing film has a two-layer structure.
- the second sealing film forming apparatus is not limited to the case where the SiN film forming apparatus is arranged in series, but other film forming apparatuses ( ⁇ -CH x film forming apparatus, hydrocarbon film forming apparatus) You may decide to arrange in series.
- FIG. 9 is a side sectional view showing an organic EL device 105 according to Embodiment 4 of the present invention
- FIG. 10 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus 203 according to Embodiment 4 of the present invention.
- FIG. In the figure, the same parts as those in FIGS.
- the organic EL device 105 according to the present embodiment has three layers of the second sealing film.
- the first inorganic film 13 as the first sealing film is formed on the surface of the organic EL element 12 to obtain the temporary sealing body 102.
- the second inorganic film 17 is sequentially formed on the surface of the temporary sealing body 102, The second organic film 18 and the third inorganic film 19 are formed, and the organic EL device 105 is obtained.
- the first inorganic film 13, the second inorganic film 17, and the third inorganic film 19 are made of SiN films, and the second organic film 15 is made of ⁇ -CH x .
- the organic EL device manufacturing apparatus 203 includes, as an example of a second sealing film forming apparatus, an SiN film forming apparatus 36 arranged in series, an ⁇ -CH x film forming apparatus 38 that is a plasma CVD apparatus, and an SiN film forming apparatus 40.
- the temporary sealing body 102 temporarily stored in the temporary sealing body storage unit 29 is taken out by the transport device and transported to the SiN film forming device 36, and sequentially using the ⁇ 37 and 39, the ⁇ -CH x film forming device 38 is used.
- the SiN film forming apparatus 40 the ⁇ -CH x film forming apparatus is expressed as ⁇ -CH x in the drawing.
- the second sealing film since the second sealing film has a three-layer structure, the moisture permeation resistance of the organic EL device 105 is further improved.
- FIG. 11 is a block diagram schematically illustrating a configuration example of another organic EL device manufacturing apparatus 204 that manufactures the organic EL device 105.
- the organic EL device manufacturing apparatus 204 includes a SiN film forming apparatus 41 and an ⁇ -CH x film forming apparatus 43 arranged in series as an example of a second sealing film forming apparatus.
- the temporary sealing body 102 temporarily stored in the temporary sealing body storage unit 29 is taken out by the transport apparatus and transported to the SiN film forming apparatus 41, and after the second inorganic film 17 is formed, the TM42 is used to form ⁇ .
- the second organic film 18 is formed by being transferred to the —CH x film forming apparatus 43.
- the organic EL device manufacturing apparatus 204 the number of second sealing film forming apparatuses can be reduced from that of the organic EL device manufacturing apparatus 203.
- FIG. 12 is a block diagram schematically illustrating a configuration example of another organic EL device manufacturing apparatus 205 that manufactures the organic EL device 105.
- the organic EL device manufacturing apparatus 205 is a SiN film forming apparatus in which temporary sealing bodies are separately conveyed from the ⁇ -CH x film forming apparatus 38 in order to form the third inorganic film 19 as the uppermost layer of the second sealing film. Three 40 are provided. Note that the number of the SiN film forming apparatuses 40 is not limited to three. Therefore, like the organic EL device manufacturing apparatus 2, the organic EL device manufacturing apparatus 205 can form SiN films almost simultaneously using a plurality of SiN film forming apparatuses 40.
- the second inorganic film 17, the second hydrocarbon film 18, and the third inorganic film 19 are formed to a thickness of 100 to 300 nm, 100 nm, 800 nm, and 1000 nm, respectively.
- the amount of film formation per unit time of the three inorganic films 19 increases, and the overall throughput can be improved.
- FIG. 13 is a block diagram schematically illustrating a configuration example of another organic EL device manufacturing apparatus 206 that manufactures the organic EL device 105.
- the organic EL device manufacturing apparatus 206 includes three SiN film forming apparatuses 47, 49, and 51 arranged in series to form the third inorganic film 19 that is the uppermost layer of the second sealing film.
- the number of SiN film forming apparatuses is not limited to three.
- the temporary sealing body 102 on which the second hydrocarbon film 18 is formed by the ⁇ -CH x film forming apparatus 43 is transferred to the SiN film forming apparatus 47 by TM39, and TM48, 50 are transferred.
- the third inorganic film 19 is sequentially formed by 1/3 amount in the thickness direction.
- each SiN film forming apparatus forms a film with a thickness of approximately 330 nm.
- the film formation amount per unit time of 19 can be increased, and the throughput can be improved.
- the present embodiment the case where a second sealing film composed of three layers is formed on the surface of the temporary sealing body 102 using the organic EL device manufacturing apparatuses 203 to 206 is described.
- the present invention is not limited, and a second sealing film having three layers may be formed on the surface of the temporary sealing body 103 having two layers. That is, the configuration of the first sealing film forming device 27 and the second sealing film forming device is not limited to the case described in the present embodiment.
- FIG. 14 is a side sectional view showing an organic EL device 106 according to Embodiment 5 of the present invention
- FIG. 15 is a block diagram schematically showing a configuration example of an organic EL device manufacturing apparatus 207 according to Embodiment 5 of the present invention.
- FIG. In the figure, the same parts as those in FIGS.
- the organic EL device 106 according to the present embodiment has two layers of the second sealing film.
- the first inorganic film 13 as the first sealing film is formed on the surface of the organic EL element 12 to obtain the temporary sealing body 102.
- the second organic film 70 and the second inorganic film 71 are formed, and the organic EL device 106 is obtained.
- the first inorganic film 13 and the second inorganic film 71 are made of SiN films, and the second organic film 70 is made of ⁇ -CH x .
- the organic EL device manufacturing apparatus 207 includes an ⁇ -CH x film forming apparatus 44 and a SiN film forming apparatus 46 arranged in series as an example of a second sealing film forming apparatus.
- the temporary sealing body 102 temporarily stored in the temporary sealing body storage unit 29 is taken out by the transport device, transported to the ⁇ -CH x film forming device 44, and transported to the SiN film forming device 46 using TM45. .
- the manufacturing time is shorter than that of the organic EL device 105 according to the fourth embodiment.
- the case where the second sealing film composed of two layers is formed on the surface of the temporary sealing body 102 using the organic EL device manufacturing apparatus 207 is described, but the present invention is not limited thereto.
- a second sealing film made of two layers may be formed on the surface of the temporary sealing body 103 made of two layers of the first sealing film. That is, the configuration of the first sealing film forming device 27 and the second sealing film forming device is not limited to the case described in the present embodiment.
- FIG. 16 is a side sectional view showing a bottom emission type organic EL device 107 according to Embodiment 6 of the present invention
- FIG. 17 is a schematic configuration example of an organic EL device manufacturing apparatus 208 according to Embodiment 6 of the present invention.
- FIG. in the figure the same parts as those in FIGS.
- the second inorganic film 72 as the second sealing film is made of Al.
- the organic EL device manufacturing apparatus 208 includes an Al film forming apparatus 52 including a sputtering apparatus as a second sealing film forming apparatus.
- the temporary sealing body 102 temporarily stored in the temporary sealing body storage unit 29 is taken out by the transport apparatus and transported to the Al film forming apparatus 52, and the second inorganic film 72 is formed.
- the Al film forming apparatus is expressed as Al in the drawing.
- the film formation time is fast.
- the temporary sealing body 102 takes about 1 minute. A film can be formed, and the manufacturing time can be shortened.
- FIG. 18 is a side sectional view showing an organic EL device 108 having a second sealing film having a two-layer structure
- FIG. 19 schematically shows a configuration example of an organic EL device manufacturing apparatus 209 for manufacturing the organic EL device 108. It is a block diagram. In the figure, the same parts as those in FIGS.
- the organic EL device manufacturing apparatus 209 includes an ⁇ -CH x film forming apparatus 53 and an Al film forming apparatus 55 arranged in series as a second sealing film forming apparatus.
- the temporary sealing body 102 temporarily stored in the temporary sealing body storage unit 29 is taken out by the transport apparatus and transported to the ⁇ -CH x film forming apparatus 53, and the second organic film 73 is formed. And it is conveyed to Al film forming apparatus 55 using TM54, and the 2nd inorganic film 74 is formed into a film.
- the first inorganic film 13 is 100 nm
- the second organic film 73 is 500 nm
- the second inorganic film 74 is 500 nm.
- FIG. 20 is a side sectional view showing an organic EL device 109 having a second sealing film having a three-layer structure
- FIG. 21 schematically shows a configuration example of an organic EL device manufacturing apparatus 210 that manufactures the organic EL device 109. It is a block diagram. In the figure, the same parts as those in FIGS.
- the organic EL device manufacturing apparatus 210 includes a SiN film forming apparatus 56, an ⁇ -CH x film forming apparatus 58, and an Al film forming apparatus 60 arranged in series as a second sealing film forming apparatus.
- the temporary sealing body 102 temporarily stored in the temporary sealing body storage unit 29 is taken out by the transport device and transported to the SiN film forming device 56, where a second inorganic film 75 made of SiN is formed.
- the manufacturing time can be shortened and thickened as necessary.
- the case where an inorganic film made of Al is formed as the uppermost layer of the second sealing film has been described.
- the inorganic film may be formed using Al alloy, Ag, Ag alloy, Cu, Cu alloy, or the like.
- an inorganic film may be formed using Al 2 O 3 .
- obtained organic EL device is not a bottom emission type.
- a second sealing film including an inorganic film made of Al as an upper layer is formed on the surface of the temporary sealing body 102 using the organic EL device manufacturing apparatuses 208 to 210 is described, but the present invention is not limited thereto.
- a second sealing film including an inorganic film made of Al may be formed on the surface of the temporary sealing body 103 having the first sealing film made of two layers. That is, the configuration of the first sealing film forming device 27 and the second sealing film forming device is not limited to the case described in the present embodiment.
- FIG. 22 is a side sectional view showing an organic EL device 110 according to Embodiment 7 of the present invention.
- the organic EL device 110 is formed by bonding a gas barrier substrate 81 to the temporary sealing body 102 using, for example, an acrylic resin.
- the gas barrier substrate 81 is formed by forming an inorganic film 80 made of SiN or SiON on a substrate 79 made of a transparent plastic film such as polyester, polyethylene, or polyolefin.
- the inorganic film 80 may be a single layer or multiple layers.
- the back surface of the substrate 79 of the gas barrier substrate 81 is bonded to the surface of the temporary sealing body 102 by an adhesive layer 78 made of acrylic resin.
- the organic EL device 110 can be manufactured by easily sealing the temporary sealing body 102 without forming a film.
- the present invention is not limited to this, and the gas barrier substrate 80 is bonded to the temporary sealing body 103. You may decide. Further, the structure of the gas barrier substrate is not limited to the case described in the present embodiment.
- FIG. 23 is a side sectional view showing an organic EL device 111 according to Embodiment 8 of the present invention.
- the organic EL device 110 after forming the second sealing film 14 on the first sealing film 13 of the temporary sealing body 102, the surface of the second sealing film 14 is interposed on the surface of the second sealing film 14 via the adhesive layer 78.
- a gas barrier substrate 81 is bonded. That is, the gas barrier substrate 81 is bonded to the second sealing film 14 of the organic EL device 101 according to the first embodiment.
- the gas barrier substrate 81 since the gas barrier substrate 81 is bonded after the second sealing film 14 is formed, the moisture permeation resistance is further improved.
- the second inorganic film 16 of the organic EL device 104 according to the second embodiment on the third inorganic film 19 of the organic EL device 105 according to the fourth embodiment, and on the organic EL device 106 according to the fifth embodiment.
- the gas barrier substrate 81 may be bonded via an adhesive layer.
- the gas barrier substrate 81 for the one using the temporary sealing body 103 instead of the temporary sealing body 102 via an adhesive layer on the second sealing film. May be joined.
- Each of the prepared temporary sealing bodies 102 and the organic EL elements 12 on which the first sealing film 13 is not formed are left in an atmospheric pressure space, and the relationship between the elapsed days and the light emitting area is examined to improve moisture permeability. evaluated.
- the results are shown in the graph of FIG.
- the horizontal axis represents the number of days left in the atmosphere, and the vertical axis represents the light emission area.
- the light emission area when the number of elapsed days is 0 is 100%.
- the organic EL element 12 absorbs water, a non-light emitting region is generated at the outer edge portion of the surface of the organic EL element 12, and the light emitting area decreases.
- the emission area is greatly reduced when 3 days have elapsed, whereas when the first sealing film 13 is formed, even if 3 days have elapsed. It can be seen that the light emission area hardly decreases.
- the thickness of the first sealing film 13 is 300 nm, the amount of decrease in the light emission area with time is slightly larger than when the thickness is 1000 nm.
- the storage time in the temporary sealing body storage unit 29 is one day. Therefore, if the thickness of the first sealing film 13 is 300 nm, it is considered that moisture resistance is sufficiently secured. Therefore, it was confirmed that good moisture permeation resistance can be obtained by forming the thin first sealing film 13 that can be formed in a short time on the surface of the organic EL element 12.
- the organic EL device manufacturing apparatus 201 according to Embodiment 2 of the present invention was used.
- an SiN film forming apparatus 3 in which an ⁇ -CH x film forming apparatus which is a plasma CVD apparatus is arranged in series instead of the hydrocarbon film forming apparatus 5 is used.
- a first inorganic film (SiN film) 13 having a thickness of 300 nm is formed on the surface of the organic EL element 12 formed on the glass substrate 11 by the SiN film forming apparatus 3.
- a first organic film ( ⁇ -CH x film) 15 having a thickness of 500 nm, 2000 nm, and 5000 nm was formed to produce three types of temporary sealing bodies 103.
- Each prepared temporary sealing body 103 was left in an atmospheric pressure space, and the relationship between the elapsed days and the light emitting area was examined to evaluate moisture resistance. The result is shown in the graph of FIG. In the graph of FIG. 25, the horizontal axis represents the number of days left in the atmosphere, and the vertical axis represents the light emission area. The light emission area when the number of elapsed days is 0 is 100%.
- FIG. 25 shows that when 3 days have elapsed, the light emission area has hardly decreased regardless of the thickness of the first organic film 15. Further, by comparing with the graph of FIG. 24, it can be seen that the moisture resistance is further improved by forming the first organic film 15 having a thickness of 500 nm on the first inorganic film 13 having a thickness of 300 nm. From the above, it was confirmed that better moisture permeation resistance can be obtained by forming the first organic film 15 having a thickness of at least 500 nm on the first inorganic film 13.
- a thin first sealing film having moisture resistance within a predetermined time is formed on the surface of the organic EL element in a reduced pressure space. After that, this is taken out to the atmospheric pressure space and temporarily stored in the temporary sealing body storage unit, and the second sealing having various film types, the number of films, and the thicknesses according to the use and required performance of the organic EL device.
- a stop film can be formed. Even in the case of forming a thick second sealing film, a plurality of the same kind of film forming apparatuses are used at the same time, or a plurality of the same kind of film forming apparatuses connected in series are used.
- an organic EL device can also be easily manufactured by bonding a gas barrier substrate to the temporary sealing body. And after forming a 2nd sealing film on the 1st sealing film of a temporary sealing body, a gas barrier board
- substrate is joined to the surface of this 2nd sealing film through an contact bonding layer, and it is more moisture-proof. Can also be improved. Therefore, the throughput is improved as a whole, the degree of freedom in designing the organic EL device is improved, and the convenience is high.
- the temporary sealing body 102 or 103 is temporarily stored in the temporary sealing body storage unit 29 .
- the present invention is not limited to this. You may decide to keep it.
- the temporary sealing body storage part 29 or the load lock chamber is not limited to the case of being under atmospheric pressure, and may be in a dry atmosphere.
- the film type, the number of films, and the thickness of the first sealing film and the second sealing film are not limited to those described in the first to eighth embodiments.
- the present invention is not limited to this.
- the SiN film forming apparatus, the ⁇ -CH x film forming apparatus, the Al film forming apparatus, etc. are provided, and the film forming apparatus to be used and the order of use are determined according to the layer structure of the second sealing film. It is also possible to film.
- the manufacturing method of the present invention can also be applied to the manufacture of display devices other than organic EL devices.
Abstract
Description
この有機ELデバイスの耐透湿性を評価するために、60℃、湿度90%の環境試験が行われているが、該環境試験に合格するために、例えば封止層としてSiN膜を形成する場合、1000nm程度の厚さを有することが必要とされている。この場合、CVD(Chemical Vapor Deposition)法で成膜するために40分程度の時間を要し、ドライクリーニングにも同程度の時間を要する。CVD法で成膜する場合、他の膜種においても厚い膜を得るには長時間を要する。
従って、スループットが低下するという問題があった。
特許文献1~3の有機ELデバイスにおいても、高い耐透湿性を確保するために、封止膜の膜厚を厚くする必要があり、上記と同様にスループットが低下するという問題があった。
本発明に係る表示デバイスは、減圧空間内で、基板上に形成された複数の表示素子の表面に、所定時間内の耐透湿性が確保された薄膜の第1封止膜を形成して仮封止体を作製し、これを大気圧空間へ取り出して一時保管した後、表示デバイスの用途に応じて各別に第1封止膜上に第2封止膜を形成してなる。第1封止膜及び第2封止膜の材質、層構造(単層及び複層のいずれか)は、表示デバイスの用途に基づき要求される耐透湿性等に応じて適宜に設定する。第2封止膜は成膜する場合には限定されず、第2封止膜として、ガスバリア基板を仮封止体の表面に接合することにしてもよい。さらに、本発明に係る表示デバイスは、仮封止体の第1封止膜上に第2封止膜を成膜した後、該第2封止膜の表面に接着層を介し、ガスバリア基板を接合することにしてもよい。
第1封止膜の直上に、第2封止膜をCVDにより成膜する場合、アルゴン等の不活性ガスのプラズマ処理により第1封止膜の表面に付着した水分等を除去することにしてもよい。この場合、第1封止膜と第2封止膜との密着性が向上し、封止性を向上させることができる。
図1は本発明の実施の形態1に係る表示デバイスとしての有機ELデバイス101を示す側断面図、図2は有機ELデバイス101の製造方法を概念的に示した説明図である。
有機ELデバイス101においては、ガラス基板11上に例えばITO(Indium Tin Oxide)膜等からなる陽極層11a、発光層及び陰極層12gを積層してなる、表示素子としての有機EL素子12の各層全体が、第1封止膜13によって封止され、さらに第2封止膜14によって第1封止膜13が封止されている。ここでは、第1封止膜13及び第2封止膜14が単層構造を有する場合につき説明する。
第1封止膜13は、有機EL素子12と化学反応が生じないという観点から、無機材料からなるのが好ましい。無機材料としては、SiN、SiON等が挙げられる。第2封止膜14の材料としては、SiN,SiON等の無機材料、及び炭化水素,α-CHx 等の有機材料が挙げられる。より耐透湿性が良好であるという観点から無機材料を用いるのが好ましい。以下、第1封止膜13及び第2封止膜14がSiNからなる場合につき説明する。SiN膜はプラズマCVD法により形成される。
有機EL素子12の有機層は、例えば、真空蒸着によって第1層から第6層まで積層してなる6層構造である。第1層はホール注入層12a、第2層はホール輸送層12b、第3層は青発光層12c、第4層は赤発光層12d、第5層は緑発光層12e、第6層は電子輸送層12fである。なお、ここで説明した第1乃至第6層の構成は一例である。
陰極層12gは、蒸着にて形成された銀、アルミニウム、アルミニウム合金、リチウムアルミニウム合金、又はマグネシウム及び銀合金等で形成された膜である。
以下、作図の便宜上、図中においてSiN膜形成装置をSiNと表記する。なお、有機ELデバイス製造装置2に備えられる第2封止膜形成部6(SiN膜形成装置30)の個数は3個には限定されず、複数個であればよい。
なお、ローダ21、LL22、成膜装置23、TM24、電極形成装置25、TM26、第1封止膜形成装置27、及びLL28は搬送方向に沿って直列に接続されている場合に限定されるものではなく、インライン(真空一貫)で接続されていればよい。例えば共通搬送室の周囲に、成膜装置23、電極形成装置25、及び第1封止膜形成装置27が配置されているものであってもよい。
成膜装置23は、真空蒸着法にて、ガラス基板11上にホール注入層12a、ホール輸送層12b、青発光層12c、赤発光層12d、緑発光層12e、電子輸送層12fを形成するための装置である。
電極形成装置25は、パターンマスクを用いて、例えば銀、アルミニウム、アルミニウム合金、リチウムアルミ合金、又はマグネシウム及び銀の合金等を蒸着又はスパッタリングすることによって、電子輸送層12f上に陰極層12gを形成する装置である。
第1封止膜形成装置27は、例えば無機膜等の第1封止膜13をCVD又は蒸着等によって形成し、ガラス基板11上に形成された各種の膜を封止するための装置である。
ローダ21から一方のゲートバルブを介しLL22へガラス基板11が搬入され、次いでLL22内が減圧状態にされて、他方のゲートバルブを介しガラス基板11が成膜装置23へ搬出される。そして、成膜装置23、TM24、電極形成装置25、TM26、及び第1封止膜形成装置27内が減圧状態に保持された状態でガラス基板11が順次搬送され、上述のように有機EL素子12の表面に第1封止膜13が形成されて仮封止体102が得られる。
LL28内を減圧状態にし、第1封止膜形成装置27との間のゲートバルブを開いて、仮封止体102が第1封止膜形成装置27からLL28へ搬出される。次に、LL28を大気圧状態に開放し、仮封止体保管部29との間のゲートバルブを開いて、前記搬送装置により仮封止体102がLL28から仮封止体保管部29内へ搬送され、カセット載置部のカセットへ収容される。
なお、仮封止体保管部29はカセット載置部を備えず、仮封止体120を1体ずつ載置する仮封止体載置部を備えることにしてもよい。
また、仮封止体保管部29は密閉され、減圧状態、又は窒素封入等により加圧状態に保持されており、LL28を大気に開放することなく、第1封止膜形成装置27から仮封止体102を仮封止体保管部29へ搬出することにしてもよい。さらに、仮封止体保管部29内を窒素封入するのではなく、前記カセット内を窒素封入することにしてもよい。
仮封止体保管部29又は前記仮封止体保管部で一時保管された仮封止体102は、1体毎又はカセット毎に、AGV、ロボット、ベルトコンベア、ガス浮上搬送装置等の搬送装置により第2封止膜形成部6の設置場所へ搬送され、ローダ61へ搬入され、LL62を介し、減圧状態を保持されたSiN膜形成装置30へ搬入される。
また、処理室301の側壁には、CVD装置3に隣接するトランファーモジュール26,28との間でガラス基板11の搬入出を行うための搬入口325,搬出口355と、この搬入口325,搬出口355を開閉するゲートバルブ326,356とが設けられている。
SiN膜形成装置30もSiN膜形成装置3と同様の構造を有する。
図5は、本発明の実施の形態2に係る表示デバイスとしての有機ELデバイス104の製造方法を概念的に示した説明図である。図中、図2と同一部分は同一符号を付して詳細な説明は省略する。
有機ELデバイス104の仮封止体103は、有機ELデバイス101の仮封止体102と異なり、第1封止膜が2層からなる。ここでは、第1封止膜が無機材料からなる第1無機膜13と、有機材料からなる第1有機膜15とから構成される場合につき説明する。前記無機材料としてはSiN,SiON等が挙げられる。前記有機材料としては炭化水素,α-CHx 等が挙げられる。以下に、第1無機膜13がSiN膜からなり、第1有機膜15が炭化水素としての分子式Cx Hy (xは20以上)で表されるパラフィンである場合につき説明する。第1有機膜15が炭化水素膜である場合、後述するように(真空物理)蒸着により形成される。第1有機膜15がα-CHx 膜である場合、炭化水素ガスとしてのC4 H6 、CH4 、C2 H2 等を用いたプラズマCVD法により形成され得る。
有機ELデバイス製造装置201において、第1封止膜形成装置27は、プラズマCVD装置からなるSiN膜形成装置3、TM4、蒸着装置からなる炭化水素膜形成装置5を直列に配置して構成される。有機ELデバイス製造装置2と同様に、第1封止膜形成装置27により得られた仮封止体103は、大気圧空間内にある仮封止体保管部29へ取り出され、1体毎に、又はカセット等に収容されて複数体毎に一時保管された後、3つのSiN膜形成装置30へそれぞれ搬送される。
なお、本実施の形態では、第1有機膜15の蒸着、リフロー処理及び硬化処理の全てを行う装置を例示したが、第1有機膜15の蒸着を行う蒸着装置と、リフロー処理を行うリフロー処理装置と、硬化処理を行う硬化処理装置とをそれぞれ単独の装置として構成してもよい。
そして、第1有機膜15の蒸着後、リフロー処理を施す場合に限定されない。但し、第1有機膜15にリフロー処理を施した場合、表面が平坦化されるので、欠陥部が生じていたときに埋没させることができ、該第1有機膜15上に欠陥なく第2無機膜16を形成することができるので好ましい。
なお、赤外線照射ヘッド542は、第1有機膜15を加熱する手段の一例である。例えば、赤外線照射ヘッド542に代えて、第1有機膜15を加熱するホットプレート等を支持台503に備えてもよい。
そして、本実施の形態においては、形成した炭化水素膜を硬化する場合につき説明しているがこれに限定されない。但し、硬化した方が、炭化水素膜の軟化又は融解による欠陥部の発生及び水分の浸入をより抑制できるので好ましい。
図8は、本発明の実施の形態3に係る有機ELデバイス製造装置202の構成例を模式的に示したブロック図である。図中、図3と同一部分は同一符号を付して詳細な説明を省略する。
有機ELデバイス製造装置202は、第2封止膜形成装置の一例としての3つの直列に配置されたSiN膜形成装置31,33,35を備えている。この有機ELデバイス製造装置202を用いて前記有機ELデバイス101を製造する場合、仮封止体保管部29に一時保管された仮封止体102が、搬送装置により取り出されてSiN膜形成装置31へ搬送され、TM32,34を用いて順次、SiN膜形成装置33,35へ搬送される。
この有機ELデバイス製造装置202においては、第2封止膜として単層のSiN膜を形成することができる。従って、上述の1体の仮封止体102が搬送された場合、厚さ方向に順次1/3量ずつ第2無機膜14が成膜される。例えばSiN膜からなる第1無機膜13に、SiN膜からなる第2無機膜14を厚さ1000nmで成膜する場合、各SiN膜形成装置で略330nm成膜することになり、連続して複数の仮封止体102を搬送させることで、スループットを向上させることができる。
そして、第2封止膜形成装置として、SiN膜形成装置を直列に配置する場合に限定されるものではなく、他の成膜装置(α-CHx 膜形成装置、炭化水素膜形成装置)を直列に配置することにしてもよい。
図9は本発明の実施の形態4に係る有機ELデバイス105を示す側断面図、図10は本発明の実施の形態4に係る有機ELデバイス製造装置203の構成例を模式的に示したブロック図である。図中、図1,3と同一部分は同一符号を付して詳細な説明を省略する。
本実施の形態に係る有機ELデバイス105は、実施の形態1に係る有機ELデバイス101と異なり、第2封止膜が3層からなる。
有機EL素子12の表面に第1封止膜としての第1無機膜13が形成されて仮封止体102が得られ、該仮封止体102の表面に、順次、第2無機膜17、第2有機膜18、第3無機膜19が形成されて有機ELデバイス105が得られる。ここでは、第1無機膜13、第2無機膜17、及び第3無機膜19がSiN膜からなり、第2有機膜15がα-CHx からなる場合について説明する。
本実施の形態においては、第2封止膜を3層構造にしているので、有機ELデバイス105の耐透湿性はより向上している。
有機ELデバイス製造装置204は、第2封止膜形成装置の一例として、直列に配置されたSiN膜形成装置41、及びα-CHx 膜形成装置43を備えている。仮封止体保管部29に一時保管された仮封止体102は、搬送装置により取り出されてSiN膜形成装置41へ搬送され、第2無機膜17が形成された後、TM42を用いてα-CHx 膜形成装置43へ搬送され、第2有機膜18が形成される。そして、再度TM42によりSiN膜形成装置41へ搬送され、第3無機膜19が形成される。
この有機ELデバイス製造装置204においては、第2封止膜形成装置の数を有機ELデバイス製造装置203より減じることができる。
有機ELデバイス製造装置205は、第2封止膜の最上層の第3無機膜19を形成するためにα-CHx 膜形成装置38から仮封止体が各別に搬送されるSiN膜形成装置40を3つ備える。なお、このSiN膜形成装置40の個数は3個には限定されない。
従って、有機ELデバイス製造装置205は有機ELデバイス製造装置2と同様に、複数個のSiN膜形成装置40を用いて略同時にSiN膜を成膜することができる。例えば、第1無機膜13,第2無機膜17,第2炭化水素膜18,第3無機膜19をそれぞれ100~300nm,100nm,800nm,1000nmの厚さで成膜する場合等においても、第3無機膜19の単位時間当たりの成膜量が増加し、スループットを全体として向上させることができる。
有機ELデバイス製造装置206は、第2封止膜の最上層の第3無機膜19を形成するために直列に配置された、3つのSiN膜形成装置47,49,51を備える。なお、このSiN膜形成装置の個数は3個には限定されない。
有機ELデバイス製造装置206においては、α-CHx 膜形成装置43により第2炭化水素膜18が形成された仮封止体102は、TM39によりSiN膜形成装置47へ搬送され、TM48,50を用いて順次、SiN膜形成装置49,51へ搬送される。従って、厚さ方向に順次1/3量ずつ第3無機膜19が成膜される。例えば第3無機膜19を厚さ1000nmで成膜する場合、各SiN膜形成装置で略330nm成膜することになり、連続して複数の仮封止体102を搬送させることで第3無機膜19の単位時間当たりの成膜量が増加し、スループットを向上させることができる。
図14は本発明の実施の形態5に係る有機ELデバイス106を示す側断面図、図15は本発明の実施の形態5に係る有機ELデバイス製造装置207の構成例を模式的に示したブロック図である。図中、図1,3と同一部分は同一符号を付して詳細な説明を省略する。
本実施の形態に係る有機ELデバイス106は、実施の形態1,4に係る有機ELデバイス101,105と異なり、第2封止膜が2層からなる。
有機ELデバイス106は、有機EL素子12の表面に第1封止膜としての第1無機膜13が形成されて仮封止体102が得られ、該仮封止体102の表面に、順次、第2有機膜70、第2無機膜71が形成されて有機ELデバイス106が得られる。ここでは、第1無機膜13、及び第2無機膜71がSiN膜からなり、第2有機膜70がα-CHx からなる場合について説明する。
なお、本実施の形態においては、有機ELデバイス製造装置207を用いて仮封止体102の表面に、2層からなる第2封止膜を形成する場合につき説明しているがこれに限定されるものではなく、第1封止膜が2層からなる仮封止体103の表面に、2層からなる第2封止膜を形成することにしてもよい。すなわち、第1封止膜形成装置27及び第2封止膜形成装置の構成は、本実施の形態において説明した場合に限定されるものではない。
図16は本発明の実施の形態6に係る、ボトムエミッション型の有機ELデバイス107を示す側断面図、図17は本発明の実施の形態6に係る有機ELデバイス製造装置208の構成例を模式的に示したブロック図である。図中、図1,3と同一部分は同一符号を付して詳細な説明を省略する。
本実施の形態に係る有機ELデバイス107は、実施の形態1に係る有機ELデバイス101と異なり、第2封止膜としての第2無機膜72がAlからなる。
図18は2層構造の第2封止膜を有する有機ELデバイス108を示す側断面図、図19は該有機ELデバイス108を製造する有機ELデバイス製造装置209の構成例を模式的に示したブロック図である。図中、図1,3と同一部分は同一符号を付して詳細な説明を省略する。
有機ELデバイス製造装置209は、第2封止膜形成装置として、直列に配置されたα-CHx 膜形成装置53、及びAl膜形成装置55を備えている。仮封止体保管部29に一時保管された仮封止体102は、搬送装置により取り出されてα-CHx 膜形成装置53へ搬送され、第2有機膜73が成膜される。そして、TM54を用いてAl膜形成装置55へ搬送され、第2無機膜74が成膜される。
膜厚の一例として、第1無機膜13が100nm、第2有機膜73が500nm、第2無機膜74が500nmの例が挙げられる。
有機ELデバイス製造装置210は、第2封止膜形成装置として、直列に配置されたSiN膜形成装置56、α-CHx 膜形成装置58、及びAl膜形成装置60を備えている。仮封止体保管部29に一時保管された仮封止体102は、搬送装置により取り出されてSiN膜形成装置56へ搬送され、SiNからなる第2無機膜75が成膜される。そして、TM57によりα-CHx 膜形成装置58へ搬送され、第2有機膜76が成膜される。さらに、TM59を用いてAl膜形成装置60へ搬送され、第3無機膜77が成膜される。
上述したように、α-CHx 膜からなる第2有機膜76、及びAlからなる第3無機膜77の成膜速度は速いので、製造時間を短縮化することができ、必要に応じて厚い膜にすることができる。
そして、有機ELデバイス製造装置208~210を用いて仮封止体102の表面に、Alからなる無機膜を上層として含む第2封止膜を形成する場合につき説明しているがこれに限定されるものではなく、第1封止膜が2層からなる仮封止体103の表面に、Alからなる無機膜を含む第2封止膜を形成することにしてもよい。すなわち、第1封止膜形成装置27及び第2封止膜形成装置の構成は本実施の形態において説明した場合に限定されるものではない。
図22は、本発明の実施の形態7に係る有機ELデバイス110を示す側断面図である。
有機ELデバイス110は、例えばアクリル樹脂等を用いて、仮封止体102にガスバリア基板81を貼り合わせてなる。ガスバリア基板81は、例えばポリエステル、ポリエチレン、又はポリオレフィン等の透明プラスチックフィルムからなる基板79に、SiN又はSiONからなる無機膜80を形成してなる。無機膜80は単層であっても複層であってもよい。
図22に示すように、仮封止体102の表面に、アクリル樹脂からなる接着層78により、ガスバリア基板81の基板79の裏面が接合されている。
また、ガスバリア基板の構成も本実施の形態において説明した場合に限定されるものではない。
図23は、本発明の実施の形態8に係る有機ELデバイス111を示す側断面図である。
有機ELデバイス110は、仮封止体102の第1封止膜13上に第2封止膜14を形成した後、該第2封止膜14の表面側に接着層78を介し、上述のガスバリア基板81を接合してなる。すなわち、実施の形態1に係る有機ELデバイス101の第2封止膜14に、ガスバリア基板81を貼り合わせた構造を有する。
同様に、実施の形態2に係る有機ELデバイス104の第2無機膜16上、実施の形態4に係る有機ELデバイス105の第3無機膜19上、実施の形態5に係る有機ELデバイス106の第2無機膜71上、実施の形態6に係る有機ELデバイス107の第2無機膜72上、有機ELデバイス108の第2無機膜74上、及び有機ELデバイス109の第3無機膜77上に、接着層を介し、ガスバリア基板81を接合することにしてもよい。さらに、実施の形態4~6に係る有機ELデバイスについては、仮封止体102の代わりに仮封止体103を用いたものについて、第2封止膜上に接着層を介し、ガスバリア基板81を接合することにしてもよい。
[性能評価試験1]
本発明の実施の形態1に係る有機ELデバイス製造装置2を用い、第1封止膜形成装置27としてのSiN膜形成装置3を用いて、ガラス基板11上に形成された有機EL素子12の表面に、それぞれ厚さ300nm,1000nmの第1封止膜(SiN膜)13を成膜して仮封止体102を作製した。
その結果を図24のグラフに示す。図24のグラフにおいて、横軸は大気放置経過日数、縦軸は発光面積である。経過日数0の場合の発光面積は100%である。有機EL素子12が吸水するに従い、有機EL素子12の表面の外縁部に非発光領域が生じて発光面積が減少する。
本発明の実施の形態2に係る有機ELデバイス製造装置201を用いた。但し、第1封止膜形成装置27はSiN膜形成装置3に、炭化水素膜形成装置5ではなく、プラズマCVD装置であるα-CHx 膜形成装置を直列に配置したものを用いた。ガラス基板11上に形成された有機EL素子12の表面に、SiN膜形成装置3により厚さ300nmの第1無機膜(SiN膜)13を形成し、該第1無機膜13の表面に、それぞれ厚さ500nm,2000nm,5000nmの第1有機膜(α-CHx 膜)15を成膜して3種の仮封止体103を作製した。
作製した各仮封止体103を大気圧空間に放置し、経過日数と発光面積との関係を調べて、耐透湿性を評価した。
その結果を図25のグラフに示す。図25のグラフにおいて、横軸は大気放置経過日数、縦軸は発光面積である。経過日数0の場合の発光面積は100%である。
従って、全体としてスループットが向上するとともに、有機ELデバイスの設計の自由度が向上し、利便性が高い。
また、予め配置が設定されている、各有機ELデバイス製造装置2、201~210を用いて製造する場合につき説明しているがこれに限定されるものではなく、有機ELデバイス製造装置に、複数のSiN膜形成装置、α-CHx 膜形成装置、Al膜形成装置等を備え、第2封止膜の層構造に対応させて、使用する膜形成装置、及びその使用順序を決定して成膜することも可能である。
さらに、本発明の製造方法は、有機ELデバイス以外の表示デバイスの製造にも適用することが可能である。
3、30、31、33、35、36、40、41、46、47、49、51 SiN膜形成装置
5 炭化水素膜形成装置
6 第2封止膜形成部
61 ローダ
62 LL
38、43、44、53 α-CHx 形成装置
11 ガラス基板
11a 陽極層
12 有機EL素子
13 第1封止膜、第1無機膜
14 第2封止膜
16、17、71、72、74、75 第2無機膜
15 第1有機膜
16、 第2無機膜
18、70、73、76 第2炭化水素膜
19、77 第3無機膜
27 第1封止膜形成装置
28 LL
29 仮封止体保管部
52、55 Al膜形成装置
78 接着層
79 基板
80 無機膜
81 ガスバリア基板
101、104、105、106、107、108、109、110、111 有機ELデバイス
102、103 仮封止体
Claims (9)
- 表示素子に該表示素子を封止するための封止膜を形成して表示デバイスを製造する表示デバイス製造装置において、
減圧下で、前記表示素子の表面に第1封止膜を形成する第1封止膜形成手段と、
形成した第1封止膜上に第2封止膜を形成する第2封止膜形成手段と、
前記第1封止膜が形成された表示素子を所定の時間、保管する保管手段と、
前記第1封止膜が形成された表示素子を前記第1封止膜形成手段から前記保管手段へ搬送する手段と、
前記保管手段により保管された表示素子を、前記保管手段から前記第2封止膜形成装置へ搬送する手段と
を備えることを特徴とする表示デバイス製造装置。 - 前記第2封止膜形成手段を複数備えることを特徴とする請求項1に記載の表示デバイス製造装置。
- 表示素子に該表示素子を封止するための封止膜を形成して表示デバイスを製造する表示デバイスの製造方法において、
第1封止膜形成手段により、減圧下で前記表示素子の表面に第1封止膜を形成する第1封止膜形成工程と、
前記第1封止膜が形成された表示素子を前記第1封止膜形成手段から保管手段へ搬送する工程と、
搬送された表示素子を前記保管手段により所定の時間、保管する工程と、
保管された表示素子を第2封止膜形成手段へ搬送する工程と、
前記第2封止膜形成手段により、搬送された表示素子の前記第1封止膜上に第2封止膜を形成する第2封止膜形成工程と
を有することを特徴とする表示デバイスの製造方法。 - 前記第2封止膜形成工程は、前記第1封止膜が形成された複数の表示素子に略同時に前記第2の封止膜を形成することを特徴とする請求項3に記載の表示デバイスの製造方法。
- 前記第1封止膜は、無機材料からなる無機膜を含むことを特徴とする請求項3又は4に記載の表示デバイスの製造方法。
- 前記第1封止膜は、前記無機膜に有機材料からなる有機膜を積層してなることを特徴とする請求項5に記載の表示デバイスの製造方法。
- 前記第2封止膜は、最上層に無機材料からなる無機膜を含むことを特徴とする請求項3乃至6のいずれかに記載の表示デバイスの製造方法。
- 前記第2封止膜は、有機材料からなる有機膜を含むことを特徴とする請求項3乃至7のいずれかに記載の表示デバイスの製造方法。
- 請求項3乃至8のいずれかに記載の表示デバイスの製造方法により製造されたことを特徴とする表示デバイス。
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