KR101676031B1 - 포토마스크 블랭크 및 그 제조 방법과 포토마스크의 제조 방법 - Google Patents

포토마스크 블랭크 및 그 제조 방법과 포토마스크의 제조 방법 Download PDF

Info

Publication number
KR101676031B1
KR101676031B1 KR1020090111506A KR20090111506A KR101676031B1 KR 101676031 B1 KR101676031 B1 KR 101676031B1 KR 1020090111506 A KR1020090111506 A KR 1020090111506A KR 20090111506 A KR20090111506 A KR 20090111506A KR 101676031 B1 KR101676031 B1 KR 101676031B1
Authority
KR
South Korea
Prior art keywords
film
light
thin film
photomask
phase shift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020090111506A
Other languages
English (en)
Korean (ko)
Other versions
KR20100056404A (ko
Inventor
마사루 다나베
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20100056404A publication Critical patent/KR20100056404A/ko
Application granted granted Critical
Publication of KR101676031B1 publication Critical patent/KR101676031B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020090111506A 2008-11-19 2009-11-18 포토마스크 블랭크 및 그 제조 방법과 포토마스크의 제조 방법 Expired - Fee Related KR101676031B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008295142A JP5356784B2 (ja) 2008-11-19 2008-11-19 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JPJP-P-2008-295142 2008-11-19

Publications (2)

Publication Number Publication Date
KR20100056404A KR20100056404A (ko) 2010-05-27
KR101676031B1 true KR101676031B1 (ko) 2016-11-14

Family

ID=42145850

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090111506A Expired - Fee Related KR101676031B1 (ko) 2008-11-19 2009-11-18 포토마스크 블랭크 및 그 제조 방법과 포토마스크의 제조 방법

Country Status (5)

Country Link
US (2) US8197992B2 (https=)
JP (1) JP5356784B2 (https=)
KR (1) KR101676031B1 (https=)
DE (1) DE102009053586A1 (https=)
TW (1) TWI453535B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5409298B2 (ja) * 2009-11-26 2014-02-05 Ｈｏｙａ株式会社 マスクブランク及び転写用マスク並びにそれらの製造方法
US9091934B2 (en) * 2010-12-24 2015-07-28 Hoya Corporation Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same
CN102929097A (zh) * 2012-10-17 2013-02-13 深圳市华星光电技术有限公司 光罩、tft玻璃基板及其制造方法
JP5802294B2 (ja) * 2014-03-06 2015-10-28 Hoya株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
TWI835695B (zh) * 2018-11-30 2024-03-11 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP2021004920A (ja) * 2019-06-25 2021-01-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP7801845B2 (ja) * 2020-09-08 2026-01-19 テクセンドフォトマスク株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139514A (ja) * 1995-11-13 1997-05-27 Nec Kansai Ltd 太陽電池およびその製造方法
JPH11184067A (ja) * 1997-12-19 1999-07-09 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク
JP2002156742A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP2002169265A (ja) 2000-12-01 2002-06-14 Hoya Corp フォトマスクブランクス及びフォトマスクブランクスの製造方法
JP4600629B2 (ja) * 2001-06-26 2010-12-15 信越化学工業株式会社 位相シフトマスクブランク及びその製造方法
US20040146650A1 (en) * 2002-10-29 2004-07-29 Microfabrica Inc. EFAB methods and apparatus including spray metal or powder coating processes
EP1698647A4 (en) 2003-12-26 2008-01-30 Kansai Paint Co Ltd POLYMER AND PROCESS FOR PRODUCING THE SAME
DE112005001588B4 (de) * 2004-07-09 2021-02-25 Hoya Corp. Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren
JP2007128799A (ja) * 2005-11-07 2007-05-24 Seiko Epson Corp 有機ｅｌ装置の製造方法、及び有機ｅｌ装置、並びに有機ｅｌ装置の製造装置
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP4958149B2 (ja) * 2006-11-01 2012-06-20 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
JP2008295142A (ja) 2007-05-23 2008-12-04 Toyo Electric Mfg Co Ltd 電気車用の半導体冷却装置

Also Published As

Publication number Publication date
TW201109829A (en) 2011-03-16
US20100124711A1 (en) 2010-05-20
JP5356784B2 (ja) 2013-12-04
US8197992B2 (en) 2012-06-12
JP2010122409A (ja) 2010-06-03
US8709683B2 (en) 2014-04-29
DE102009053586A1 (de) 2010-06-10
TWI453535B (zh) 2014-09-21
KR20100056404A (ko) 2010-05-27
US20120214093A1 (en) 2012-08-23

Similar Documents

Publication Publication Date Title
JP5313401B2 (ja) 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスク
KR101255414B1 (ko) 포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법
KR101742325B1 (ko) 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법과 마스크 블랭크 및 전사용 마스크
KR101780068B1 (ko) 마스크 블랭크 및 전사용 마스크의 제조 방법
KR101373966B1 (ko) 포토마스크의 제조 방법
KR101993929B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 반사형 마스크의 제조 방법
KR101676031B1 (ko) 포토마스크 블랭크 및 그 제조 방법과 포토마스크의 제조 방법
KR101669690B1 (ko) Ｅｕｖ 리소그래피용 반사형 마스크 블랭크
TWI689777B (zh) 遮罩基底、相位轉移遮罩及半導體元件之製造方法
JP6297766B1 (ja) マスクブランク、転写用マスク及び半導体デバイスの製造方法
JP5409298B2 (ja) マスクブランク及び転写用マスク並びにそれらの製造方法
KR101153663B1 (ko) 포토마스크 블랭크 및 그 제조 방법과 포토마스크 및 그 제조 방법
TW202129394A (zh) 光罩基底、反射型光罩之製造方法、及半導體裝置之製造方法
US20210026235A1 (en) Mask blank, phase shift mask, and method for manufacturing semiconductor device
KR20150087295A (ko) 마스크 블랭크, 전사용 마스크, 마스크 블랭크의 제조방법, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
JP2012159855A (ja) マスクブランクの製造方法及びマスクの製造方法
CN113242995B (zh) 掩模坯料、相移掩模、相移掩模的制造方法及半导体器件的制造方法
JP2008116583A (ja) マスクブランクの製造方法及びフォトマスクの製造方法、並びに反射型マスクの製造方法
KR102637346B1 (ko) 포토마스크 블랭크 및 그 제조 방법
US20240361683A1 (en) Mask blank and phase shift mask
WO2023037731A1 (ja) マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
KR20150127814A (ko) 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20221109

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20221109

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000