TWI453535B - 光罩基板、光罩基板之製造方法及光罩之製造方法 - Google Patents

光罩基板、光罩基板之製造方法及光罩之製造方法 Download PDF

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Publication number
TWI453535B
TWI453535B TW098139064A TW98139064A TWI453535B TW I453535 B TWI453535 B TW I453535B TW 098139064 A TW098139064 A TW 098139064A TW 98139064 A TW98139064 A TW 98139064A TW I453535 B TWI453535 B TW I453535B
Authority
TW
Taiwan
Prior art keywords
film
substrate
light
mask
photomask
Prior art date
Application number
TW098139064A
Other languages
English (en)
Chinese (zh)
Other versions
TW201109829A (en
Inventor
田邊勝
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201109829A publication Critical patent/TW201109829A/zh
Application granted granted Critical
Publication of TWI453535B publication Critical patent/TWI453535B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW098139064A 2008-11-19 2009-11-18 光罩基板、光罩基板之製造方法及光罩之製造方法 TWI453535B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008295142A JP5356784B2 (ja) 2008-11-19 2008-11-19 フォトマスクブランクの製造方法及びフォトマスクの製造方法

Publications (2)

Publication Number Publication Date
TW201109829A TW201109829A (en) 2011-03-16
TWI453535B true TWI453535B (zh) 2014-09-21

Family

ID=42145850

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098139064A TWI453535B (zh) 2008-11-19 2009-11-18 光罩基板、光罩基板之製造方法及光罩之製造方法

Country Status (5)

Country Link
US (2) US8197992B2 (https=)
JP (1) JP5356784B2 (https=)
KR (1) KR101676031B1 (https=)
DE (1) DE102009053586A1 (https=)
TW (1) TWI453535B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5409298B2 (ja) * 2009-11-26 2014-02-05 Ｈｏｙａ株式会社 マスクブランク及び転写用マスク並びにそれらの製造方法
US9091934B2 (en) * 2010-12-24 2015-07-28 Hoya Corporation Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same
CN102929097A (zh) * 2012-10-17 2013-02-13 深圳市华星光电技术有限公司 光罩、tft玻璃基板及其制造方法
JP5802294B2 (ja) * 2014-03-06 2015-10-28 Hoya株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
TWI835695B (zh) * 2018-11-30 2024-03-11 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP2021004920A (ja) * 2019-06-25 2021-01-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP7801845B2 (ja) * 2020-09-08 2026-01-19 テクセンドフォトマスク株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335124B1 (en) * 1997-12-19 2002-01-01 Hoya Corporation Phase shift mask and phase shift mask blank
TW200535156A (en) * 2003-12-26 2005-11-01 Kansai Paint Co Ltd A polymer and method of manufacturing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139514A (ja) * 1995-11-13 1997-05-27 Nec Kansai Ltd 太陽電池およびその製造方法
JP2002156742A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP2002169265A (ja) 2000-12-01 2002-06-14 Hoya Corp フォトマスクブランクス及びフォトマスクブランクスの製造方法
JP4600629B2 (ja) * 2001-06-26 2010-12-15 信越化学工業株式会社 位相シフトマスクブランク及びその製造方法
US20040146650A1 (en) * 2002-10-29 2004-07-29 Microfabrica Inc. EFAB methods and apparatus including spray metal or powder coating processes
DE112005001588B4 (de) * 2004-07-09 2021-02-25 Hoya Corp. Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren
JP2007128799A (ja) * 2005-11-07 2007-05-24 Seiko Epson Corp 有機ｅｌ装置の製造方法、及び有機ｅｌ装置、並びに有機ｅｌ装置の製造装置
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP4958149B2 (ja) * 2006-11-01 2012-06-20 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
JP2008295142A (ja) 2007-05-23 2008-12-04 Toyo Electric Mfg Co Ltd 電気車用の半導体冷却装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335124B1 (en) * 1997-12-19 2002-01-01 Hoya Corporation Phase shift mask and phase shift mask blank
TW200535156A (en) * 2003-12-26 2005-11-01 Kansai Paint Co Ltd A polymer and method of manufacturing the same

Also Published As

Publication number Publication date
TW201109829A (en) 2011-03-16
US20100124711A1 (en) 2010-05-20
JP5356784B2 (ja) 2013-12-04
US8197992B2 (en) 2012-06-12
JP2010122409A (ja) 2010-06-03
US8709683B2 (en) 2014-04-29
DE102009053586A1 (de) 2010-06-10
KR101676031B1 (ko) 2016-11-14
KR20100056404A (ko) 2010-05-27
US20120214093A1 (en) 2012-08-23

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