DE102009053586A1 - Photomaskenrohling, Herstellungsverfahren für Photomaskenrohling und Herstellungsverfahren für Photomaske - Google Patents

Photomaskenrohling, Herstellungsverfahren für Photomaskenrohling und Herstellungsverfahren für Photomaske Download PDF

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Publication number
DE102009053586A1
DE102009053586A1 DE102009053586A DE102009053586A DE102009053586A1 DE 102009053586 A1 DE102009053586 A1 DE 102009053586A1 DE 102009053586 A DE102009053586 A DE 102009053586A DE 102009053586 A DE102009053586 A DE 102009053586A DE 102009053586 A1 DE102009053586 A1 DE 102009053586A1
Authority
DE
Germany
Prior art keywords
light
layer
thin film
photomask
pressing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102009053586A
Other languages
German (de)
English (en)
Inventor
Masaru Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of DE102009053586A1 publication Critical patent/DE102009053586A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE102009053586A 2008-11-19 2009-11-17 Photomaskenrohling, Herstellungsverfahren für Photomaskenrohling und Herstellungsverfahren für Photomaske Withdrawn DE102009053586A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008295142A JP5356784B2 (ja) 2008-11-19 2008-11-19 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JP2008-295142 2008-11-19

Publications (1)

Publication Number Publication Date
DE102009053586A1 true DE102009053586A1 (de) 2010-06-10

Family

ID=42145850

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009053586A Withdrawn DE102009053586A1 (de) 2008-11-19 2009-11-17 Photomaskenrohling, Herstellungsverfahren für Photomaskenrohling und Herstellungsverfahren für Photomaske

Country Status (5)

Country Link
US (2) US8197992B2 (https=)
JP (1) JP5356784B2 (https=)
KR (1) KR101676031B1 (https=)
DE (1) DE102009053586A1 (https=)
TW (1) TWI453535B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5409298B2 (ja) * 2009-11-26 2014-02-05 Ｈｏｙａ株式会社 マスクブランク及び転写用マスク並びにそれらの製造方法
US9091934B2 (en) * 2010-12-24 2015-07-28 Hoya Corporation Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same
CN102929097A (zh) * 2012-10-17 2013-02-13 深圳市华星光电技术有限公司 光罩、tft玻璃基板及其制造方法
JP5802294B2 (ja) * 2014-03-06 2015-10-28 Hoya株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
TWI835695B (zh) * 2018-11-30 2024-03-11 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP2021004920A (ja) * 2019-06-25 2021-01-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP7801845B2 (ja) * 2020-09-08 2026-01-19 テクセンドフォトマスク株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002156742A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP2008295142A (ja) 2007-05-23 2008-12-04 Toyo Electric Mfg Co Ltd 電気車用の半導体冷却装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139514A (ja) * 1995-11-13 1997-05-27 Nec Kansai Ltd 太陽電池およびその製造方法
JPH11184067A (ja) * 1997-12-19 1999-07-09 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク
JP2002169265A (ja) 2000-12-01 2002-06-14 Hoya Corp フォトマスクブランクス及びフォトマスクブランクスの製造方法
JP4600629B2 (ja) * 2001-06-26 2010-12-15 信越化学工業株式会社 位相シフトマスクブランク及びその製造方法
US20040146650A1 (en) * 2002-10-29 2004-07-29 Microfabrica Inc. EFAB methods and apparatus including spray metal or powder coating processes
EP1698647A4 (en) 2003-12-26 2008-01-30 Kansai Paint Co Ltd POLYMER AND PROCESS FOR PRODUCING THE SAME
DE112005001588B4 (de) * 2004-07-09 2021-02-25 Hoya Corp. Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren
JP2007128799A (ja) * 2005-11-07 2007-05-24 Seiko Epson Corp 有機ｅｌ装置の製造方法、及び有機ｅｌ装置、並びに有機ｅｌ装置の製造装置
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP4958149B2 (ja) * 2006-11-01 2012-06-20 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002156742A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP2008295142A (ja) 2007-05-23 2008-12-04 Toyo Electric Mfg Co Ltd 電気車用の半導体冷却装置

Also Published As

Publication number Publication date
TW201109829A (en) 2011-03-16
US20100124711A1 (en) 2010-05-20
JP5356784B2 (ja) 2013-12-04
US8197992B2 (en) 2012-06-12
JP2010122409A (ja) 2010-06-03
US8709683B2 (en) 2014-04-29
TWI453535B (zh) 2014-09-21
KR101676031B1 (ko) 2016-11-14
KR20100056404A (ko) 2010-05-27
US20120214093A1 (en) 2012-08-23

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R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: G03F0001080000

Ipc: G03F0001500000

R079 Amendment of ipc main class

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Ipc: G03F0001500000

Effective date: 20120111

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20120601