KR101676031B1 - 포토마스크 블랭크 및 그 제조 방법과 포토마스크의 제조 방법 - Google Patents

포토마스크 블랭크 및 그 제조 방법과 포토마스크의 제조 방법 Download PDF

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Publication number
KR101676031B1
KR101676031B1 KR1020090111506A KR20090111506A KR101676031B1 KR 101676031 B1 KR101676031 B1 KR 101676031B1 KR 1020090111506 A KR1020090111506 A KR 1020090111506A KR 20090111506 A KR20090111506 A KR 20090111506A KR 101676031 B1 KR101676031 B1 KR 101676031B1
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KR
South Korea
Prior art keywords
film
light
thin film
photomask
phase shift
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020090111506A
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English (en)
Korean (ko)
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KR20100056404A (ko
Inventor
마사루 다나베
Original Assignee
호야 가부시키가이샤
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Publication of KR20100056404A publication Critical patent/KR20100056404A/ko
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Publication of KR101676031B1 publication Critical patent/KR101676031B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020090111506A 2008-11-19 2009-11-18 포토마스크 블랭크 및 그 제조 방법과 포토마스크의 제조 방법 Expired - Fee Related KR101676031B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008295142A JP5356784B2 (ja) 2008-11-19 2008-11-19 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JPJP-P-2008-295142 2008-11-19

Publications (2)

Publication Number Publication Date
KR20100056404A KR20100056404A (ko) 2010-05-27
KR101676031B1 true KR101676031B1 (ko) 2016-11-14

Family

ID=42145850

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090111506A Expired - Fee Related KR101676031B1 (ko) 2008-11-19 2009-11-18 포토마스크 블랭크 및 그 제조 방법과 포토마스크의 제조 방법

Country Status (5)

Country Link
US (2) US8197992B2 (enExample)
JP (1) JP5356784B2 (enExample)
KR (1) KR101676031B1 (enExample)
DE (1) DE102009053586A1 (enExample)
TW (1) TWI453535B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5409298B2 (ja) * 2009-11-26 2014-02-05 Ｈｏｙａ株式会社 マスクブランク及び転写用マスク並びにそれらの製造方法
KR101883025B1 (ko) * 2010-12-24 2018-07-27 호야 가부시키가이샤 마스크 블랭크 및 그 제조 방법, 및 전사용 마스크 및 그 제조 방법
CN102929097A (zh) * 2012-10-17 2013-02-13 深圳市华星光电技术有限公司 光罩、tft玻璃基板及其制造方法
JP5802294B2 (ja) * 2014-03-06 2015-10-28 Hoya株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
TWI847949B (zh) * 2018-11-30 2024-07-01 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP2021004920A (ja) * 2019-06-25 2021-01-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP2022045198A (ja) * 2020-09-08 2022-03-18 凸版印刷株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139514A (ja) * 1995-11-13 1997-05-27 Nec Kansai Ltd 太陽電池およびその製造方法
JPH11184067A (ja) * 1997-12-19 1999-07-09 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク
JP2002156742A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP2002169265A (ja) * 2000-12-01 2002-06-14 Hoya Corp フォトマスクブランクス及びフォトマスクブランクスの製造方法
JP4600629B2 (ja) * 2001-06-26 2010-12-15 信越化学工業株式会社 位相シフトマスクブランク及びその製造方法
US20040146650A1 (en) * 2002-10-29 2004-07-29 Microfabrica Inc. EFAB methods and apparatus including spray metal or powder coating processes
WO2005063838A1 (ja) 2003-12-26 2005-07-14 Kansai Paint Co., Ltd. 重合体および重合体の製造方法
US20080305406A1 (en) * 2004-07-09 2008-12-11 Hoya Corporation Photomask Blank, Photomask Manufacturing Method and Semiconductor Device Manufacturing Method
JP2007128799A (ja) * 2005-11-07 2007-05-24 Seiko Epson Corp 有機ｅｌ装置の製造方法、及び有機ｅｌ装置、並びに有機ｅｌ装置の製造装置
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP4958149B2 (ja) * 2006-11-01 2012-06-20 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
JP2008295142A (ja) 2007-05-23 2008-12-04 Toyo Electric Mfg Co Ltd 電気車用の半導体冷却装置

Also Published As

Publication number Publication date
TWI453535B (zh) 2014-09-21
JP5356784B2 (ja) 2013-12-04
JP2010122409A (ja) 2010-06-03
US20100124711A1 (en) 2010-05-20
KR20100056404A (ko) 2010-05-27
US8197992B2 (en) 2012-06-12
DE102009053586A1 (de) 2010-06-10
US20120214093A1 (en) 2012-08-23
US8709683B2 (en) 2014-04-29
TW201109829A (en) 2011-03-16

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