JP5356784B2 - フォトマスクブランクの製造方法及びフォトマスクの製造方法 - Google Patents

フォトマスクブランクの製造方法及びフォトマスクの製造方法 Download PDF

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Publication number
JP5356784B2
JP5356784B2 JP2008295142A JP2008295142A JP5356784B2 JP 5356784 B2 JP5356784 B2 JP 5356784B2 JP 2008295142 A JP2008295142 A JP 2008295142A JP 2008295142 A JP2008295142 A JP 2008295142A JP 5356784 B2 JP5356784 B2 JP 5356784B2
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JP
Japan
Prior art keywords
film
photomask
thin film
light
manufacturing
Prior art date
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Expired - Fee Related
Application number
JP2008295142A
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English (en)
Japanese (ja)
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JP2010122409A5 (enExample
JP2010122409A (ja
Inventor
勝 田辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
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Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2008295142A priority Critical patent/JP5356784B2/ja
Priority to DE102009053586A priority patent/DE102009053586A1/de
Priority to KR1020090111506A priority patent/KR101676031B1/ko
Priority to US12/620,805 priority patent/US8197992B2/en
Priority to TW098139064A priority patent/TWI453535B/zh
Publication of JP2010122409A publication Critical patent/JP2010122409A/ja
Publication of JP2010122409A5 publication Critical patent/JP2010122409A5/ja
Priority to US13/460,893 priority patent/US8709683B2/en
Application granted granted Critical
Publication of JP5356784B2 publication Critical patent/JP5356784B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2008295142A 2008-11-19 2008-11-19 フォトマスクブランクの製造方法及びフォトマスクの製造方法 Expired - Fee Related JP5356784B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008295142A JP5356784B2 (ja) 2008-11-19 2008-11-19 フォトマスクブランクの製造方法及びフォトマスクの製造方法
DE102009053586A DE102009053586A1 (de) 2008-11-19 2009-11-17 Photomaskenrohling, Herstellungsverfahren für Photomaskenrohling und Herstellungsverfahren für Photomaske
US12/620,805 US8197992B2 (en) 2008-11-19 2009-11-18 Photomask blank, photomask blank manufacturing method, and photomask manufacturing method
TW098139064A TWI453535B (zh) 2008-11-19 2009-11-18 光罩基板、光罩基板之製造方法及光罩之製造方法
KR1020090111506A KR101676031B1 (ko) 2008-11-19 2009-11-18 포토마스크 블랭크 및 그 제조 방법과 포토마스크의 제조 방법
US13/460,893 US8709683B2 (en) 2008-11-19 2012-05-01 Photomask blank, photomask blank manufacturing method, and photomask manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008295142A JP5356784B2 (ja) 2008-11-19 2008-11-19 フォトマスクブランクの製造方法及びフォトマスクの製造方法

Publications (3)

Publication Number Publication Date
JP2010122409A JP2010122409A (ja) 2010-06-03
JP2010122409A5 JP2010122409A5 (enExample) 2011-12-08
JP5356784B2 true JP5356784B2 (ja) 2013-12-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008295142A Expired - Fee Related JP5356784B2 (ja) 2008-11-19 2008-11-19 フォトマスクブランクの製造方法及びフォトマスクの製造方法

Country Status (5)

Country Link
US (2) US8197992B2 (enExample)
JP (1) JP5356784B2 (enExample)
KR (1) KR101676031B1 (enExample)
DE (1) DE102009053586A1 (enExample)
TW (1) TWI453535B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5409298B2 (ja) * 2009-11-26 2014-02-05 Ｈｏｙａ株式会社 マスクブランク及び転写用マスク並びにそれらの製造方法
KR101883025B1 (ko) * 2010-12-24 2018-07-27 호야 가부시키가이샤 마스크 블랭크 및 그 제조 방법, 및 전사용 마스크 및 그 제조 방법
CN102929097A (zh) * 2012-10-17 2013-02-13 深圳市华星光电技术有限公司 光罩、tft玻璃基板及其制造方法
JP5802294B2 (ja) * 2014-03-06 2015-10-28 Hoya株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
TWI847949B (zh) * 2018-11-30 2024-07-01 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP2021004920A (ja) * 2019-06-25 2021-01-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP2022045198A (ja) * 2020-09-08 2022-03-18 凸版印刷株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139514A (ja) * 1995-11-13 1997-05-27 Nec Kansai Ltd 太陽電池およびその製造方法
JPH11184067A (ja) * 1997-12-19 1999-07-09 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク
JP2002156742A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP2002169265A (ja) * 2000-12-01 2002-06-14 Hoya Corp フォトマスクブランクス及びフォトマスクブランクスの製造方法
JP4600629B2 (ja) * 2001-06-26 2010-12-15 信越化学工業株式会社 位相シフトマスクブランク及びその製造方法
US20040146650A1 (en) * 2002-10-29 2004-07-29 Microfabrica Inc. EFAB methods and apparatus including spray metal or powder coating processes
WO2005063838A1 (ja) 2003-12-26 2005-07-14 Kansai Paint Co., Ltd. 重合体および重合体の製造方法
US20080305406A1 (en) * 2004-07-09 2008-12-11 Hoya Corporation Photomask Blank, Photomask Manufacturing Method and Semiconductor Device Manufacturing Method
JP2007128799A (ja) * 2005-11-07 2007-05-24 Seiko Epson Corp 有機ｅｌ装置の製造方法、及び有機ｅｌ装置、並びに有機ｅｌ装置の製造装置
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP4958149B2 (ja) * 2006-11-01 2012-06-20 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
JP2008295142A (ja) 2007-05-23 2008-12-04 Toyo Electric Mfg Co Ltd 電気車用の半導体冷却装置

Also Published As

Publication number Publication date
TWI453535B (zh) 2014-09-21
JP2010122409A (ja) 2010-06-03
KR101676031B1 (ko) 2016-11-14
US20100124711A1 (en) 2010-05-20
KR20100056404A (ko) 2010-05-27
US8197992B2 (en) 2012-06-12
DE102009053586A1 (de) 2010-06-10
US20120214093A1 (en) 2012-08-23
US8709683B2 (en) 2014-04-29
TW201109829A (en) 2011-03-16

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