KR101674274B1 - Iii-v 에피택셜층들을 성장시키는 방법 - Google Patents

Iii-v 에피택셜층들을 성장시키는 방법 Download PDF

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KR101674274B1
KR101674274B1 KR1020147003437A KR20147003437A KR101674274B1 KR 101674274 B1 KR101674274 B1 KR 101674274B1 KR 1020147003437 A KR1020147003437 A KR 1020147003437A KR 20147003437 A KR20147003437 A KR 20147003437A KR 101674274 B1 KR101674274 B1 KR 101674274B1
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KR20140063593A (ko
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조프 델륀
스테판 디그루트
마리안느 제르맹
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에피간 엔브이
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H—ELECTRICITY
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
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    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
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    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
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    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
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    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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KR1020147003437A 2011-07-18 2012-07-06 Iii-v 에피택셜층들을 성장시키는 방법 Active KR101674274B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1112327.0A GB201112327D0 (en) 2011-07-18 2011-07-18 Method for growing III-V epitaxial layers
GB1112327.0 2011-07-18
PCT/EP2012/063317 WO2013010828A1 (en) 2011-07-18 2012-07-06 Method for growing iii-v epitaxial layers

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KR20140063593A KR20140063593A (ko) 2014-05-27
KR101674274B1 true KR101674274B1 (ko) 2016-11-08

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US (2) US9230803B2 (https=)
EP (1) EP2735030B1 (https=)
JP (1) JP6120841B2 (https=)
KR (1) KR101674274B1 (https=)
CN (1) CN103765592B (https=)
GB (1) GB201112327D0 (https=)
WO (1) WO2013010828A1 (https=)

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US9761439B2 (en) * 2014-12-12 2017-09-12 Cree, Inc. PECVD protective layers for semiconductor devices
CN107615447B (zh) * 2015-05-29 2021-01-19 美国亚德诺半导体公司 具有陷阱富集区域的氮化镓设备
US9484412B1 (en) 2015-09-23 2016-11-01 International Business Machines Corporation Strained silicon—germanium integrated circuit with inversion capacitance enhancement and method to fabricate same
GB2547661A (en) * 2016-02-24 2017-08-30 Jiang Quanzhong Layered vertical field effect transistor and methods of fabrication
US10074721B2 (en) * 2016-09-22 2018-09-11 Infineon Technologies Ag Method of fabricating a semiconductor wafer that includes producing a planarised surface having both a mesa surface and an insulating layer surface
US10134603B2 (en) 2016-09-22 2018-11-20 Infineon Technologies Ag Method of planarising a surface
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
CA3101187A1 (en) * 2018-05-29 2019-12-05 Iqe Plc Optoelectronic devices formed over a buffer
US10741666B2 (en) * 2018-11-19 2020-08-11 Vanguard International Semiconductor Corporation High electron mobility transistor and method for forming the same
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CN113130644B (zh) * 2020-12-18 2023-03-24 英诺赛科(苏州)科技有限公司 半导体器件以及制造半导体器件的方法
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Publication number Publication date
KR20140063593A (ko) 2014-05-27
US20160099309A1 (en) 2016-04-07
CN103765592A (zh) 2014-04-30
US9230803B2 (en) 2016-01-05
US9748331B2 (en) 2017-08-29
JP6120841B2 (ja) 2017-04-26
WO2013010828A1 (en) 2013-01-24
EP2735030A1 (en) 2014-05-28
EP2735030B1 (en) 2017-03-15
US20140167114A1 (en) 2014-06-19
CN103765592B (zh) 2017-09-19
JP2014521229A (ja) 2014-08-25
GB201112327D0 (en) 2011-08-31

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