JP6120841B2 - Iii−vエピタキシャル層を成長させるための方法 - Google Patents
Iii−vエピタキシャル層を成長させるための方法 Download PDFInfo
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- JP6120841B2 JP6120841B2 JP2014520601A JP2014520601A JP6120841B2 JP 6120841 B2 JP6120841 B2 JP 6120841B2 JP 2014520601 A JP2014520601 A JP 2014520601A JP 2014520601 A JP2014520601 A JP 2014520601A JP 6120841 B2 JP6120841 B2 JP 6120841B2
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Description
基板(例えば、Si、SiGe、Ge、基板およびそれらの組み合わせ、好ましくはSi基板(例えば<111>Si基板))を準備すること、
上記基板上にエピタキシャルな半導体のバッファ層(例えばIII−Vバッファ層(例えばIII−窒化物層))を設けて、当該エピタキシャルな半導体のバッファ層および基板の間に(例えば導電性の)界面を形成すること、または当該バッファ層を設けることによって当該界面を得ること、ならびに、
上記界面における電流を遮断するために、当該界面にある基板に1つ以上の局所的な電気絶縁を形成することを包含している。そのような絶縁は、シャロートレンチアイソレーション(STI)、LOCOS、不純物インプランテーション、ディープトレンチエッチングおよびこれらの組み合わせであり得る。上記基板における上記1つ以上の局所的な絶縁は、規則的なパターンに形成され得る。
基板(例えば、Si、SiGe、Ge、絶縁体上のSi、絶縁体上のGe基板およびそれらの組み合わせ、好ましくはSi基板(例えば<111>Si基板))を準備すること;
上記基板上にエピタキシャルな半導体のバッファ層(例えばIII−Vバッファ層(例えばIII−窒化物層))を設けることによって、当該バッファ層および上記基板の間に導電性界面を得ること;
上記導電性界面における電流を遮断するために、上記導電性界面および部分的に上記基板に、1つ以上の局所的な電気絶縁を形成すること;ならびに、
上記1つ以上の局所的な電気絶縁を、少なくとも1つの上記局所的な電気絶縁が当該素子の高圧の端子および低圧の端子の間に配置されるように、素子と位置合わせすることを包含している。
基板(例えば、Si、SiGe、Ge、基板およびそれらの組み合わせ、好ましくはSi基板(例えば<111>Si基板))、
上記基板上にあるバッファ層(例えばIII−Vバッファ層(例えばIII−窒化物層))を備えており、
上記バッファ層は、当該バッファおよび上記基板の間に界面を有しており、
導電性パスは、1つ以上の電気絶縁(例えば、シャロートレンチアイソレーション(STI)、LOCOS、不純物インプランテーション、ディープトレンチエッチングおよびこれらの組み合わせ)によって遮断されていることを特徴とし、上記基板およびバッファ層の間の上記界面に存在している。
(b)上記1つ以上の局所的な電気絶縁の間の間隙は、0.2μm〜20μmの幅、より好ましくは0.5μm〜10μmの幅、より一層好ましくは1μm〜5μmの幅であるか、および/または、
(c)上記1つ以上の局所的な電気絶縁の規則的なパターンの周期は、ゲートからドレインまでの距離より小さく、当該周期および距離は、同一平面にあり、好ましくは実質的に同一方向にある、ことが好ましい。
基板(例えば、Si、SiGe、Ge、基板およびそれらの組み合わせ、好ましくはSi基板(例えば<111>Si基板))を準備すること、
上記基板上にエピタキシャルな半導体のバッファ層(例えばIII−Vバッファ層(例えばIII−窒化物層))を設け、このようにして界面を形成すること;および、
上記界面にある基板に1つ以上の局所的な電気絶縁(例えば、シャロートレンチアイソレーション(STI)、LOCOS、不純物インプランテーション、ディープトレンチエッチングおよびこれらの組み合わせ)を形成することを包含している。基板における1つ以上の局所的な絶縁は、規則的なパターンに形成され得る。
基板(例えば、Si、SiGe、Ge、基板およびそれらの組み合わせ、好ましくはSi基板(例えば<111>Si基板))、
上記基板上にあるバッファ層(例えばIII−Vバッファ層(例えばIII−窒化物層))を備えており、
上記バッファ層は、当該バッファおよび上記基板の間に界面を有しており、
導電性パスは、上記基板およびバッファ層の間の上記界面に存在しており、上記界面に流れる電流を妨げるために当該界面に形成されている1つ以上の電気絶縁(例えば、シャロートレンチアイソレーション(STI)、LOCOS、不純物インプランテーション、ディープトレンチエッチングおよびこれらの組み合わせ)によって遮断されていることを特徴とする。
(b)上記1つ以上の局所的な電気絶縁の間の間隙は、0.2μm〜20μmの幅、より好ましくは0.5μm〜10μmの幅、より一層好ましくは1μm〜5μmの幅であるか、および/または、
(c)上記1つ以上の局所的な電気絶縁の規則的なパターンの周期は、ゲートからドレインまでの距離より小さく、当該周期および距離は、同一平面にあり、好ましくは実質的に同一方向にある、ことが好ましい。
感受性の生物学的要素、生物学的に生成された材料または生物模倣物;
生物学的な要素との分析物の相互作用から生じる信号を他の信号に変換する変換器または検出器の構成要素;ならびに、
付属する電子部品またはシグナルプロセッサからなる。
図1は、従来技術に係る半導体素子の断面図である。
図2は、本発明に係る半導体素子を製造する方法の断面図である。
図3a〜bは、本発明に係る半導体素子を製造する方法の断面図である。
図4〜7および図8a〜dは、本発明に係る半導体素子を製造する方法の断面図である。
図9a〜fは、本発明に係る半導体素子を製造する方法の平面図である。
本発明は、特定の実施態様に関して図面を参照して説明されているが、本発明は、それらに限定されることなく、特許請求の範囲のみによって限定される。説明されている図面は、概略に過ぎず、非限定的である。図面において、いくつかの要素の大きさは、拡大されており、例示を目的とする大きさを描写していない。寸法および相対的な寸法は、本発明の実施に対する実際の縮尺と対応していない。
本発明の一例において、基板(層1)上のエピタキシャルバッファ構造(層2)は、AlN核生成層によって構成されているとともに、GaN(層3)、Al(Ga)N(層4)、およびSiN(層5)から構成される(Al(Ga)N(層4)およびSiN(層5)は任意)保護積層によってそのまま覆われた1つ以上の(In)AlGaNバッファ層によって任意に構成されている(従来技術を示す比較図1を参照)。構造は、基板とバッファ構成層(図1において矢印で示されている)との間に形成された導電チャネルをさらに備えている。この構造には、種々の標準的な半導体プロセスの工程(例えば、リソグラフィ、エッチング、堆積、インプラント、または酸化など)を実行し得、バッファ層上における選択的なエピタキシャル再成長のために、当該構造をMOCVD反応装置にさらに再導入し得る。一例において、基板(1)は、Si<111>である。他の例において、基板(1)はGe<111>である。また、他の例において、基板(1)は、結晶性Geの被覆を有しているSiである。上述のSiおよびGeの間には、SiGe移行層が存在し得る。
Claims (9)
- 高出力用途、高圧用途、高出力RF増幅器、多重化および双方向性電源スイッチングの1つ以上に好適なトランジスタまたはダイオードである半導体構造を含んでいる素子を製造する方法であって、
Si、SiGe、Ge、絶縁体上のSiおよび絶縁体上のGeの1つ以上を含んでいる基板を準備する工程;
上記基板上にIII−V族のエピタキシャルな半導体のバッファ層を設けることによって、上記バッファ層および基板の間に導電性界面を得る工程;
上記バッファ層を覆う1つ以上の保護層を形成する工程;
上記1つ以上の保護層を形成した後に、上記III−V族のエピタキシャルな半導体のバッファ層を貫いて上記基板の中まで、表面を規定している1つ以上の局所的な電気絶縁体を上記導電性界面に形成することによって、上記導電性界面における電流を遮断する工程、ここで、
上記半導体構造がトランジスタであるとき、上記1つ以上の局所的な電気絶縁体のうちの少なくとも1つは、当該トランジスタのゲートおよびドレインの間に形成されているか、または当該トランジスタのゲートは、上記1つ以上の局所的な電気絶縁体のまっすぐ上に置かれており、
上記半導体構造がダイオードであるとき、上記1つ以上の局所的な電気絶縁体のうちの少なくとも1つは、当該ダイオードのカソードおよびアノードの間に形成されている;
上記1つ以上の局所的な電気絶縁体の、上記表面を平坦化する工程;
上記表面を平坦化することの後に、上記1つ以上の保護層を除去する工程;ならびに
上記1つ以上の保護層を除去することの後に、III−V族のエピタキシャル層を選択的かつエピタキシャルに成長させる工程を包含している、方法。 - 上記1つ以上の局所的な電気絶縁体は、シャロートレンチアイソレーション、LOCOS、不純物インプランテーション、ディープトレンチエッチングおよびこれらの組み合わせのうち少なくとも1つによって形成される、請求項1に記載の方法。
- 上記1つ以上の局所的な電気絶縁体は、規則的なパターンに形成される、請求項1に記載の方法。
- 上記素子は、ゲートおよびドレインを含んでおり、当該ゲートは、ゲート−ドレイン距離だけ当該ドレインから離されており、
上記規則的なパターンの周期は、上記ゲート−ドレイン距離より小さく、
上記規則的なパターンにおける複数の上記局所的な絶縁体の配列物、ならびに上記ゲートおよびドレインの配列物は、同一平面、および実質的に同一方向にある、請求項3に記載の方法。 - 上記1つ以上の電気絶縁体のそれぞれは、25nm〜2.5μmの幅を有している、請求項1に記載の方法。
- 上記1つ以上の電気絶縁体のうち2つの隣接する電気絶縁体が、0.2μm〜20μmの幅の間隙によって離されている、請求項1に記載の方法。
- 上記1つ以上の保護層は、III−V族の層、SiN層およびそれらの組み合わせからなる群から選択される1つ以上の層を含んでいる、請求項1に記載の方法。
- 上記1つ以上の保護層は、(i)上記バッファ層上に付与されているGaNのスタック、(ii)GaN層上に付与されているAlN、および(iii)AlN層上に付与されているSiN層を含んでいる、請求項7に記載の方法。
- 上記基板およびバッファ層の少なくとも1つを、複数の局所的な上記電気絶縁体を用いてパターニングすることによってIII−V族の層を選択的に再成長させることを含んでいる上記再成長プロセスを実施することをさらに包含している、請求項1に記載の方法。
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Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012207501B4 (de) * | 2012-05-07 | 2017-03-02 | Forschungsverbund Berlin E.V. | Halbleiterschichtenstruktur |
CN103117294B (zh) | 2013-02-07 | 2015-11-25 | 苏州晶湛半导体有限公司 | 氮化物高压器件及其制造方法 |
TWI493617B (zh) * | 2013-10-07 | 2015-07-21 | Nat Univ Tsing Hua | 部分隔離矽基板之三族氮化物半導體裝置之製作方法 |
KR102188493B1 (ko) | 2014-04-25 | 2020-12-09 | 삼성전자주식회사 | 질화물 단결정 성장방법 및 질화물 반도체 소자 제조방법 |
US9761439B2 (en) * | 2014-12-12 | 2017-09-12 | Cree, Inc. | PECVD protective layers for semiconductor devices |
US9923060B2 (en) * | 2015-05-29 | 2018-03-20 | Analog Devices, Inc. | Gallium nitride apparatus with a trap rich region |
US9484412B1 (en) | 2015-09-23 | 2016-11-01 | International Business Machines Corporation | Strained silicon—germanium integrated circuit with inversion capacitance enhancement and method to fabricate same |
GB2547661A (en) * | 2016-02-24 | 2017-08-30 | Jiang Quanzhong | Layered vertical field effect transistor and methods of fabrication |
US10134603B2 (en) * | 2016-09-22 | 2018-11-20 | Infineon Technologies Ag | Method of planarising a surface |
US10074721B2 (en) | 2016-09-22 | 2018-09-11 | Infineon Technologies Ag | Method of fabricating a semiconductor wafer that includes producing a planarised surface having both a mesa surface and an insulating layer surface |
US10734303B2 (en) * | 2017-11-06 | 2020-08-04 | QROMIS, Inc. | Power and RF devices implemented using an engineered substrate structure |
US10741666B2 (en) * | 2018-11-19 | 2020-08-11 | Vanguard International Semiconductor Corporation | High electron mobility transistor and method for forming the same |
US10666353B1 (en) * | 2018-11-20 | 2020-05-26 | Juniper Networks, Inc. | Normal incidence photodetector with self-test functionality |
CN111463273A (zh) * | 2020-03-25 | 2020-07-28 | 西北工业大学 | 一种基于氮化镓异质结外延的长关型hemt器件及其制备方法 |
WO2021257965A1 (en) * | 2020-06-19 | 2021-12-23 | Macom Technology Solutions Holdings, Inc. | Suppression of parasitic acoustic waves in integrated circuit devices |
CN113130643B (zh) * | 2020-12-18 | 2022-11-25 | 英诺赛科(苏州)科技有限公司 | 半导体器件以及制造半导体器件的方法 |
US11888054B2 (en) | 2020-12-18 | 2024-01-30 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN113224193B (zh) * | 2021-04-12 | 2022-06-14 | 华南理工大学 | 结合嵌入电极与钝化层结构的InGaN/GaN多量子阱蓝光探测器及其制备方法与应用 |
WO2022217539A1 (zh) * | 2021-04-15 | 2022-10-20 | 苏州晶湛半导体有限公司 | 半导体结构及其制作方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3644410A1 (de) * | 1986-12-24 | 1988-07-07 | Licentia Gmbh | Photoempfaenger |
US5077231A (en) * | 1991-03-15 | 1991-12-31 | Texas Instruments Incorporated | Method to integrate HBTs and FETs |
US5243207A (en) * | 1991-03-15 | 1993-09-07 | Texas Instruments Incorporated | Method to integrate HBTs and FETs |
JP2891204B2 (ja) * | 1996-09-27 | 1999-05-17 | 日本電気株式会社 | 半導体装置の製造方法 |
DE69940074D1 (de) * | 1998-09-14 | 2009-01-22 | Panasonic Corp | Verfahren zur herstellung einer halbleitervorrichtung |
JP2000196029A (ja) * | 1998-12-28 | 2000-07-14 | Sony Corp | 半導体装置とその製造方法 |
JP4521542B2 (ja) * | 1999-03-30 | 2010-08-11 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体基板 |
JP2002170877A (ja) * | 2000-12-01 | 2002-06-14 | Sharp Corp | 半導体装置の製造方法 |
US6756633B2 (en) * | 2001-12-27 | 2004-06-29 | Silicon Storage Technology, Inc. | Semiconductor memory array of floating gate memory cells with horizontally oriented floating gate edges |
JP4136939B2 (ja) | 2002-01-09 | 2008-08-20 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP2003332676A (ja) * | 2002-05-08 | 2003-11-21 | Mitsubishi Electric Corp | 半導体光装置 |
US7449728B2 (en) | 2003-11-24 | 2008-11-11 | Tri Quint Semiconductor, Inc. | Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same |
US7247889B2 (en) | 2004-12-03 | 2007-07-24 | Nitronex Corporation | III-nitride material structures including silicon substrates |
DE102005010821B4 (de) | 2005-03-07 | 2007-01-25 | Technische Universität Berlin | Verfahren zum Herstellen eines Bauelements |
EP2175494B1 (en) * | 2006-03-16 | 2015-03-25 | Fujitsu Limited | Compound semiconductor device and manufacturing method of the same |
US7955960B2 (en) | 2007-03-22 | 2011-06-07 | Hynix Semiconductor Inc. | Nonvolatile memory device and method of fabricating the same |
KR100966989B1 (ko) * | 2007-03-22 | 2010-06-30 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 제조 방법 |
US7875907B2 (en) * | 2007-09-12 | 2011-01-25 | Transphorm Inc. | III-nitride bidirectional switches |
JP2010016089A (ja) * | 2008-07-02 | 2010-01-21 | Nec Electronics Corp | 電界効果トランジスタ、その製造方法、及び半導体装置 |
US20100155831A1 (en) * | 2008-12-20 | 2010-06-24 | Power Integrations, Inc. | Deep trench insulated gate bipolar transistor |
JP2011082216A (ja) * | 2009-10-02 | 2011-04-21 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
CN101719465B (zh) | 2009-11-27 | 2015-10-21 | 晶能光电(江西)有限公司 | 硅衬底GaN基半导体材料的制造方法 |
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