KR101663753B1 - 액처리 장치, 액처리 방법 및 기억 매체 - Google Patents

액처리 장치, 액처리 방법 및 기억 매체 Download PDF

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Publication number
KR101663753B1
KR101663753B1 KR1020100060172A KR20100060172A KR101663753B1 KR 101663753 B1 KR101663753 B1 KR 101663753B1 KR 1020100060172 A KR1020100060172 A KR 1020100060172A KR 20100060172 A KR20100060172 A KR 20100060172A KR 101663753 B1 KR101663753 B1 KR 101663753B1
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KR
South Korea
Prior art keywords
liquid
processing
nozzle
vibration
treatment
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KR1020100060172A
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English (en)
Korean (ko)
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KR20110004278A (ko
Inventor
에이이치 세키모토
야스유키 고메타니
타케시 오토
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도쿄엘렉트론가부시키가이샤
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Publication of KR20110004278A publication Critical patent/KR20110004278A/ko
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Publication of KR101663753B1 publication Critical patent/KR101663753B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
KR1020100060172A 2009-07-06 2010-06-24 액처리 장치, 액처리 방법 및 기억 매체 KR101663753B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-160231 2009-07-06
JP2009160231A JP5195673B2 (ja) 2009-07-06 2009-07-06 液処理装置、液処理方法及び記憶媒体

Publications (2)

Publication Number Publication Date
KR20110004278A KR20110004278A (ko) 2011-01-13
KR101663753B1 true KR101663753B1 (ko) 2016-10-07

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ID=43593429

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KR1020100060172A KR101663753B1 (ko) 2009-07-06 2010-06-24 액처리 장치, 액처리 방법 및 기억 매체

Country Status (2)

Country Link
JP (1) JP5195673B2 (ja)
KR (1) KR101663753B1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5459279B2 (ja) 2011-09-02 2014-04-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5497144B2 (ja) 2012-03-07 2014-05-21 東京エレクトロン株式会社 半導体製造装置のプロセス監視装置及び半導体製造装置のプロセス監方法並びに半導体製造装置
JP5790622B2 (ja) * 2012-11-01 2015-10-07 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置及び記憶媒体
JP5764592B2 (ja) 2013-02-22 2015-08-19 東京エレクトロン株式会社 基板処理装置、基板処理装置の監視装置及び基板処理装置の監視方法
JP5939204B2 (ja) * 2013-06-12 2016-06-22 東京エレクトロン株式会社 液処理装置
JP6344277B2 (ja) * 2015-03-19 2018-06-20 東京エレクトロン株式会社 液処理装置
JP2018054429A (ja) * 2016-09-28 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 検出方法および検出装置
JP7365220B2 (ja) * 2019-12-12 2023-10-19 東京エレクトロン株式会社 液処理装置及び処理液の温度調整方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003062507A (ja) 2001-08-29 2003-03-04 Fuji Photo Film Co Ltd 塗布方法及び装置
JP2006049632A (ja) * 2004-08-05 2006-02-16 Tokyo Electron Ltd 液処理装置、液処理方法及び液状態検出装置
JP2006095492A (ja) 2004-09-30 2006-04-13 Fuji Photo Film Co Ltd 塗布方法及び光学フィルム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2810456B2 (ja) * 1989-11-30 1998-10-15 サンスター技研株式会社 塗布材のビード切れ検出方法
JP4845668B2 (ja) * 2006-10-17 2011-12-28 東京エレクトロン株式会社 複合配管及び複合配管を備える塗布・現像処理装置
JP5107119B2 (ja) * 2007-04-11 2012-12-26 富士フイルム株式会社 溶液製膜方法及び設備

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003062507A (ja) 2001-08-29 2003-03-04 Fuji Photo Film Co Ltd 塗布方法及び装置
JP2006049632A (ja) * 2004-08-05 2006-02-16 Tokyo Electron Ltd 液処理装置、液処理方法及び液状態検出装置
JP2006095492A (ja) 2004-09-30 2006-04-13 Fuji Photo Film Co Ltd 塗布方法及び光学フィルム

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Publication number Publication date
KR20110004278A (ko) 2011-01-13
JP5195673B2 (ja) 2013-05-08
JP2011014849A (ja) 2011-01-20

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