KR101613141B1 - 원료 기화 공급 장치 - Google Patents

원료 기화 공급 장치 Download PDF

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Publication number
KR101613141B1
KR101613141B1 KR1020157003850A KR20157003850A KR101613141B1 KR 101613141 B1 KR101613141 B1 KR 101613141B1 KR 1020157003850 A KR1020157003850 A KR 1020157003850A KR 20157003850 A KR20157003850 A KR 20157003850A KR 101613141 B1 KR101613141 B1 KR 101613141B1
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South Korea
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raw material
flow rate
control device
gas
rate control
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Korean (ko)
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KR20150030770A (ko
Inventor
아츠시 히다카
마사아키 나가세
사토루 야마시타
코우지 니시노
노부카즈 이케다
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가부시키가이샤 후지킨
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    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C9/00—Methods or apparatus for discharging liquefied or solidified gases from vessels not under pressure
    • F17C9/02—Methods or apparatus for discharging liquefied or solidified gases from vessels not under pressure with change of state, e.g. vaporisation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22—STEAM GENERATION
    • F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00—Methods of steam generation characterised by form of heating method
    • F22B1/28—Methods of steam generation characterised by form of heating method in boilers heated electrically
    • F22B1/284—Methods of steam generation characterised by form of heating method in boilers heated electrically with water in reservoirs
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22—STEAM GENERATION
    • F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00—Methods of steam generation characterised by form of heating method
    • F22B1/28—Methods of steam generation characterised by form of heating method in boilers heated electrically
    • F22B1/284—Methods of steam generation characterised by form of heating method in boilers heated electrically with water in reservoirs
    • F22B1/285—Methods of steam generation characterised by form of heating method in boilers heated electrically with water in reservoirs the water being fed by a pump to the reservoirs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Thermal Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020157003850A 2012-12-06 2013-11-20 원료 기화 공급 장치 Active KR101613141B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012267021A JP5837869B2 (ja) 2012-12-06 2012-12-06 原料気化供給装置
JPJP-P-2012-267021 2012-12-06
PCT/JP2013/006812 WO2014087592A1 (ja) 2012-12-06 2013-11-20 原料気化供給装置

Publications (2)

Publication Number Publication Date
KR20150030770A KR20150030770A (ko) 2015-03-20
KR101613141B1 true KR101613141B1 (ko) 2016-04-18

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Application Number Title Priority Date Filing Date
KR1020157003850A Active KR101613141B1 (ko) 2012-12-06 2013-11-20 원료 기화 공급 장치

Country Status (6)

Country Link
US (1) US9994955B2 (enExample)
JP (1) JP5837869B2 (enExample)
KR (1) KR101613141B1 (enExample)
CN (1) CN104822858B (enExample)
TW (1) TWI503443B (enExample)
WO (1) WO2014087592A1 (enExample)

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JP6712440B2 (ja) * 2015-03-13 2020-06-24 株式会社堀場エステック 液体材料気化装置、液体材料気化システム
JP6578125B2 (ja) 2015-04-30 2019-09-18 株式会社フジキン 気化供給装置
JP6627474B2 (ja) * 2015-09-30 2020-01-08 東京エレクトロン株式会社 原料ガス供給装置、原料ガス供給方法及び記憶媒体
DE102016208166A1 (de) * 2016-05-12 2017-11-16 Robert Bosch Gmbh Kraftstoffversorgungssystem für eine gasbetriebene Brennkraftmaschine und Verfahren zum Betreiben eines Kraftstoffversorgungssystems
US20190257551A1 (en) * 2016-09-28 2019-08-22 Clean Planet Inc. Heat generating system
JP6948803B2 (ja) 2017-03-02 2021-10-13 東京エレクトロン株式会社 ガス供給装置、ガス供給方法及び成膜方法
JP6877188B2 (ja) * 2017-03-02 2021-05-26 東京エレクトロン株式会社 ガス供給装置、ガス供給方法及び成膜方法
WO2019021948A1 (ja) * 2017-07-25 2019-01-31 株式会社フジキン 流体制御装置
JP7097085B2 (ja) 2017-07-25 2022-07-07 株式会社フジキン 流体制御装置
CN108128955A (zh) * 2017-12-27 2018-06-08 江苏南大光电材料股份有限公司 含mo源溶剂的回收装置及其方法
US11788190B2 (en) * 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
KR102767031B1 (ko) * 2019-08-29 2025-02-14 가부시키가이샤 후지킨 유체 공급 시스템
JP7577339B2 (ja) 2019-09-19 2024-11-05 株式会社フジキン 気化供給装置
US20230002900A1 (en) 2019-12-16 2023-01-05 Fujikin Incorporated Vaporization supply method and vaporization supply device
JP7412747B2 (ja) * 2020-01-30 2024-01-15 株式会社フジキン 圧電素子駆動式バルブ、圧力式流量制御装置及び気化供給装置
DE102020001894A1 (de) 2020-03-24 2021-09-30 Azur Space Solar Power Gmbh Metallorganische chemische Gasphasenepitaxie- oder Gasphasenabscheidungsvorrichtung
JP7470375B2 (ja) * 2020-03-30 2024-04-18 株式会社フジキン 流体制御装置及びこれを用いた流体制御システム
KR102323922B1 (ko) * 2020-05-18 2021-11-09 주식회사 제이원테크코리아 발광분광분석기의 아르곤 가스 유지관리 시스템 및 그 방법
DE102021117457A1 (de) 2021-07-06 2023-01-12 Aixtron Se Verdampfungsquelle für einen CVD-Reaktor
CN117305099B (zh) * 2023-10-08 2024-05-14 安徽贝宝食品有限公司 一种可旋转全自动发酵设备及方法
WO2025096119A1 (en) * 2023-10-31 2025-05-08 Lam Research Corporation Vapor delivery system with charge volume container

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JP2009252760A (ja) * 2008-04-01 2009-10-29 Fujikin Inc 気化器を備えたガス供給装置
JP2012234860A (ja) * 2011-04-28 2012-11-29 Fujikin Inc 原料の気化供給装置

Also Published As

Publication number Publication date
CN104822858A (zh) 2015-08-05
JP2014114463A (ja) 2014-06-26
WO2014087592A1 (ja) 2014-06-12
KR20150030770A (ko) 2015-03-20
US9994955B2 (en) 2018-06-12
CN104822858B (zh) 2017-08-01
US20150322567A1 (en) 2015-11-12
JP5837869B2 (ja) 2015-12-24
TWI503443B (zh) 2015-10-11
TW201441412A (zh) 2014-11-01

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