WO2019021948A1 - 流体制御装置 - Google Patents
流体制御装置 Download PDFInfo
- Publication number
- WO2019021948A1 WO2019021948A1 PCT/JP2018/027233 JP2018027233W WO2019021948A1 WO 2019021948 A1 WO2019021948 A1 WO 2019021948A1 JP 2018027233 W JP2018027233 W JP 2018027233W WO 2019021948 A1 WO2019021948 A1 WO 2019021948A1
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- WO
- WIPO (PCT)
- Prior art keywords
- heat transfer
- transfer member
- unit
- fluid
- heater
- Prior art date
Links
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0082—Regulation; Control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/14—Evaporating with heated gases or vapours or liquids in contact with the liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/40—Heating elements having the shape of rods or tubes
- H05B3/42—Heating elements having the shape of rods or tubes non-flexible
Definitions
- the present invention relates to a fluid control apparatus used in a semiconductor manufacturing apparatus or a chemical plant, and more particularly to a fluid control apparatus provided with a heater for heating a fluid.
- a raw material vaporization and supply apparatus for supplying a raw material gas to a process chamber is used (for example, Patent Document 1).
- an organic metal liquid raw material such as TEOS (Tetraethyl orthosilicate) is stored in a liquid storage tank, pressurized inert gas is supplied to the liquid storage tank, and the liquid raw material is maintained at a constant pressure. There is something which is pushed out and supplied to a vaporizer.
- the supplied liquid source is vaporized by a heater disposed around the vaporizer, and the vaporized gas is controlled to a predetermined flow rate by a flow control device and supplied to the semiconductor manufacturing apparatus.
- the raw material vaporization supply device is configured to be able to heat the liquid raw material to a relatively high temperature, for example, a temperature of 200 ° C. or more.
- the raw material vaporization and supply apparatus in order to prevent condensation (reliquefaction) of the vaporized raw material, it is required to supply gas to the process chamber through the flow path heated to a high temperature. Furthermore, in order to efficiently vaporize the organic metal material, the liquid source may be preheated before being supplied to the vaporizer. For this reason, in the raw material vaporization and supply device, a heater for heating a fluid heating unit (a vaporizer or the like) provided with a flow path or a fluid storage unit to a high temperature is disposed at a necessary place.
- a fluid heating unit a vaporizer or the like
- Patent Document 2 discloses a preheating unit that preheats the raw material liquid, a vaporizer that vaporizes the raw material liquid heated by the preheating unit, and a high-temperature compatible pressure flow control that controls the flow rate of the vaporized gas.
- a device for vaporizing and delivering is disclosed.
- a jacket heater is used as a means for heating the main body, the flow path, and the like of the vaporizer.
- the jacket heater is closely attached from the outside so as to cover the vaporizer, the piping, etc., and the fluid can be heated from the outside by supplying a current to the heating wire (nichrome wire etc.) in the jacket heater.
- the jacket heater has an advantage of high convenience because it is relatively easy to attach and remove.
- the thermal conductivity tends to vary depending on the location, making it difficult to uniformly heat the internal fluid.
- the jacket heater in order to improve the thermal uniformity, it is necessary to arrange the heating wires evenly in a wide range, so that there is a problem that it takes time and cost for manufacturing.
- This invention is made in view of the said subject, and makes it a main purpose to provide the fluid control apparatus which can heat and supply a raw material efficiently and uniformly using a heater.
- a fluid control apparatus includes a fluid heating unit having a flow passage or a fluid storage unit provided therein, and a heater for heating the fluid heating unit, the heater including a heating element and the heat generation.
- a heat transfer member thermally connected to the body and disposed to surround the fluid heating portion, and a surface of the heat transfer member facing the fluid heating portion is surface-treated to improve heat dissipation Including the
- the heat transfer member is formed of aluminum or an aluminum alloy, and the surface treated to improve the heat dissipation is an alumite treated surface.
- the heat transfer member includes an inner side surface opposite to the fluid heating unit, and an outer side surface opposite to the inner side surface, and the outer side surface includes a polishing surface.
- the heat transfer member has an inner side surface opposite to the fluid heating unit, and an outer side surface opposite to the inner side surface, and the outer side surface is a mirror finished surface including.
- the heat transfer member is formed of aluminum or an aluminum alloy, and the outer surface of the heat transfer member is a mirror-finished surface, and all surfaces other than the outer surface of the heat transfer member are , Anodized surface.
- the fluid control device includes: a vaporization unit; a preheating unit for preheating a liquid supplied to the vaporization unit; and a fluid control measurement unit for controlling or measuring a gas delivered from the vaporization unit
- the fluid heating unit is at least one of the vaporization unit, the preheating unit, and the fluid control measurement unit.
- a gap is provided between a heat transfer member of a first heater that heats the preheating unit and a heat transfer member of a second heater that heats the vaporization unit.
- the fluid control device further includes a heat insulating member provided in the gap between the heat transfer member of the first heater and the heat transfer member of the second heater.
- the fluid control device According to the fluid control device according to the embodiment of the present invention, it is possible to appropriately supply the heated raw material while achieving energy saving by heating the fluid uniformly and efficiently using the heater with improved energy utilization efficiency. Can.
- FIG. 2 is a schematic view showing a fluid control apparatus according to an embodiment of the present invention.
- (A) And (b) is a disassembled perspective view of a heater, and each shows a time when it sees from diagonally upper side, and when it sees from diagonally lower side. It is a figure which shows the cross section of the heat-transfer member of the heater concerning embodiment of this invention.
- FIGS. 7A to 7C are diagrams showing a manufacturing process of the heat transfer member of the heater according to the embodiment of the present invention, wherein (a) to (c) show different processes. It is a schematic diagram which shows the structural example of the fluid control part concerning embodiment of this invention.
- FIG. 1 shows a fluid control device 100 according to an embodiment of the present invention.
- the fluid control device 100 includes a vaporization unit 4 for generating a source gas G used in a semiconductor manufacturing apparatus and the like, a preheating unit 2 for preheating a liquid source L supplied to the vaporization unit 4, and delivery from the vaporization unit 4. And a fluid control and measurement unit 6 for controlling or measuring the gas G.
- the portion filled with the liquid source L is indicated by hatching, and the portion where the gas G is flowing is indicated by hatching.
- the preheating unit 2, the vaporization unit 4, and the fluid control measurement unit 6 are all provided as a fluid heating unit 1 in which the fluid (liquid source L or gas G) inside is heated, and the preheating unit 2, Inside each of the vaporization unit 4 and the fluid control measurement unit 6, a flow passage or a fluid storage unit is provided. These are each heated from the outside by the heater 10 mentioned later.
- the vaporization unit 4 is connected to the preheating unit 2 via the liquid filling valve 3. Moreover, the vaporization part 4 and the fluid control measurement part 6 are connected via the flow path block 5 in which the flow path was provided in the inside. In the flow path between the vaporization unit 4 and the fluid control measurement unit 6, a pressure detector 7 for detecting the pressure P0 of the vaporized gas G is provided.
- the liquid filling valve 3 can be controlled to supply a predetermined amount of liquid source L to the vaporization unit 4 based on the pressure value detected by the pressure detector 7.
- a liquid detection unit (not shown) is provided to detect that the liquid source L exceeding a predetermined amount is supplied into the vaporization unit 4, and the liquid filling valve 3 is closed when the liquid detection unit detects a liquid. By doing this, it is possible to prevent the excessive supply of the liquid source L to the vaporization unit 4.
- a thermometer a platinum temperature measuring resistor, a thermocouple, a thermistor, etc.
- a liquid level meter a load cell or the like disposed in the vaporization chamber can be used. .
- the fluid control measurement unit 6 is a known high-temperature compatible pressure type flow control device, and as described later, the flow rate of the gas flowing through the orifice member 71 is controlled by using a control valve. Control can be performed by adjusting the upstream pressure P1.
- the fluid control measurement unit 6 is not limited to the pressure type flow control device, and may be a flow control device of various aspects. Further, the fluid control measurement unit 6 may be a fluid measurement unit such as a flow rate sensor or a concentration sensor. Hereinafter, the fluid control measurement unit 6 which is a pressure type flow control device may be described as the fluid control unit 6.
- the fluid control device 100 heats the preheating unit 2 as the heater 10 that heats the above-described fluid heating unit 1 (here, the preheating unit 2, the vaporization unit 4, the fluid control unit 6).
- a heater 12, a second heater 14 for heating the vaporization unit 4, and a third heater 16 for heating the fluid control unit 6 are provided.
- FIGS. 2A and 2B are exploded perspective views of the heater 10 (the first heater 12, the second heater 14, and the third heater 16) when viewed from different angles. As shown in FIGS. 2A and 2B, each of the heaters 10 includes a heating element 10a and a metal heat transfer member 10b thermally connected to the heating element 10a.
- the heat generated by the heating element 10a is conducted to the whole of the heat transfer member 10b, and the heat transfer member 10b is entirely heated by the heating element 10a. And the heat transfer member 10b heated uniformly can heat the fluid heating part 1 uniformly from the outer side.
- the heat transfer member 10b is preferably formed of a metal (eg, aluminum, silver, copper, gold, etc.) having a good thermal conductivity.
- a known cartridge heater is used as the heating element 10a.
- the heat transfer member 10 b a member made of aluminum or an aluminum alloy disposed so as to surround the fluid heating unit 1 is used.
- the heat transfer member 10b is configured by connecting aluminum parts by screwing or the like, and, for example, a fluid is provided inside by fixing a bottom plate portion, a pair of side wall portions, and an upper surface portion in combination.
- the heating unit 1 is provided so as to surround it.
- the heat generating body 10 a of the heater 10 is inserted into and fixed in a narrow hole provided in the side wall portion of the heat transfer member 10 b.
- the heating element 10a and the heat transfer member 10b are thermally connected, and fixed so that the heat from the heating element 10a can be efficiently transmitted to the heat transfer member 10b.
- the heat generating body 10a is closely fixed to the narrow hole provided in the heat transfer member 10b, and a known heat conductive substance (heat conductive grease or heat conductive sheet applied to the outside of the heat generating body 10a , Etc.) may be fixed to the heat transfer member 10b.
- the rod-like cartridge heater 10 a is inserted into the fine hole extending downward from the upper end surface of the side wall portion of the heat transfer member 10 b downward.
- the L-shaped refracting heating element 10a is inserted into a horizontally extending slot provided with an opening at the lateral end face of the side wall of the heat transfer member 10b.
- various known heat generating devices can be used as the heat generating body 10a, and for example, a planar heater fixed to the heat transfer member 10b may be used.
- the horizontal direction portion 10y of the heating element 10a refracted in the L shape is accommodated in the narrow hole of the heat transfer member 10b, since the vertical direction portion 10z is not inserted in the narrow hole, the heat transfer is performed. It may be a hindrance to the connection between the members 10b.
- the recess 11z for accommodating the vertical portion 10z is formed in advance at the end of the heat transfer member 10b, and when the horizontal portion 10y of the heat generating body 10a is inserted into the fine hole, the vertical portion 10z By storing in the recessed part 11z, it can also be made not to prevent the connection of the heat-transfer member 10b.
- the temperature sensor 10c attached to the 2nd heater 14 (heater which heats the vaporization part 4) is shown, and the temperature of the heat-transfer member 10b of the 2nd heater 14 is directly It can be measured.
- the temperature of the first heater 12 is set to, for example, about 180 ° C.
- the temperature of the second heater 14 is set to, for example, about 200 ° C.
- the temperature of the third heater 16 is set to, for example, about 210 ° C.
- the first heater 12 heating the preheating unit 2 is set to a temperature lower than the second heater 14 heating the vaporization unit 4, and the third heater 16 heating the fluid control unit 6 is the second heater 14. It is set to a higher temperature.
- the temperature of each heater can be individually controlled using a control device (not shown), vaporization of the raw material, preheating of the liquid raw material, and prevention of reliquefaction of the vaporized raw material are each appropriate. It can be done at various temperatures.
- the upper surface portion of the heat transfer member 10 b may have any shape corresponding to the shape of the upper attachment member such as a valve or a pressure sensor mounted thereon. Thereby, heat transfer to the fluid heating unit 1 can be performed, and the heat transfer unit can be appropriately used as a support member for the upper attachment member.
- the bottom plate portion of the heat transfer member 10b may be attached to the common support 19 via a heat insulating member 18 made of resin (for example, PEEK (Poly Ether Ether Ketone)), as shown in FIG. 2 (b).
- the heat insulating member 18 may be formed of any material as long as it can block heat, and the material or the like may be appropriately selected according to the temperature.
- a PEEK heat insulating member 13 is disposed in the gap between the heat transfer member of the first heater 12 and the heat transfer member of the second heater 14.
- the heat conduction from the second heater 14 and the vaporization unit 4 to the preheating unit 2 is suppressed, so that the temperature of the preheating unit 2 becomes too high and the raw material liquid is vaporized before being sent to the vaporization unit. It can be effectively prevented.
- the heat insulating member 13 ' is disposed downstream of the fluid control unit 6 (near the stop valve 56) so that heat transfer to the outside can be suppressed and the fluid control unit 6 can be easily maintained at high temperature. It has become.
- the heat insulating members 13 and 13 ' may also be formed of any material or shape as long as they can block heat, and materials and the like may be appropriately selected according to the temperature.
- the inner side surface of the aluminum heat transfer member 10 b in which the heat generating body 10 a is disposed that is, the surface facing the fluid heating unit 1
- the surface S1 on which alumite treatment (anodic oxidation treatment) has been performed is included as a surface treatment for improving heat dissipation.
- the outer surface of the heat transfer member includes a polished surface or a mirror-finished surface S2.
- the mirror-finished surface on the outer side of the heat transfer member 10b is typically formed by a polishing process, but may be formed only by scraping.
- the heat dissipation can be improved by subjecting the inner surface S1 of the heat transfer member 10b to alumite treatment (in particular, hard alumite treatment).
- alumite treatment in particular, hard alumite treatment.
- the heat can be conducted directly from the heat transfer member 10b to the fluid heating unit 1, and there is a distance between the heat transfer member 10b and the fluid heating unit 1 Even by the high radiation (high radiant heat), it can be transmitted to the liquid heating unit 1 with uniform and improved efficiency.
- the heat h is conducted from the contact portion, but when the heat h is transferred from the heat transfer member 10b to the fluid heating unit 1, the heat transfer member 10b If the inner surface of the heat transfer member 10b is not anodized, heat is reflected from the inner surface of the heat transfer member 10b and heat h which does not move to the fluid heating unit 1 exists because of the emissivity.
- the inner surface of the heat transfer member 10b is alumite treated as in the present embodiment, the emissivity is high, so there is almost no heat reflected on the surface in contact with the fluid heating portion 1, Substantially all of the heat h from the member 10 b is conducted to the fluid heating unit 1.
- the heater 10 of the present embodiment energy utilization efficiency can be improved and energy saving can be achieved. Moreover, the time for heating the liquid heating unit 1 to a desired temperature can be shortened.
- the outer side surface S2 of the heat transfer member 10b is mirror-finished, the reflectance is improved and the emissivity is decreased.
- the heat radiation to the outside of the heater 10 can be suppressed, and the heat radiation to the inside can be efficiently performed, and energy saving can be achieved.
- the amount of heat released to the outside is small and the surface temperature is maintained at a relatively low temperature, it is possible to relatively easily take measures against the high temperature on the outside.
- the outside of the fluid control device 100 is required to be maintained at a temperature of, for example, 60 ° C. or less for safety.
- the emissivity at 200 ° C. of the inner surface S1 (alumite treated surface) of the heat transfer member 10b is set to, for example, 0.950 (reflectance 0.050), and the outer surface S2 (polished surface or The emissivity at 200 ° C. of the mirror-finished surface) is set to, for example, 0.039 (reflectance 0.961). Further, the mirror-finished surface of the outer side surface is set to, for example, an arithmetic average roughness Ra of about 0.1a to 1.6a.
- an aluminum member (in this case, an aluminum plate) having a desired shape is prepared by cutting.
- the aluminum member may be formed of aluminum or an aluminum alloy.
- the entire surface of the aluminum member is subjected to an alumite treatment (anodizing treatment).
- alumite treatment anodizing treatment
- so-called hard alumite treatment is performed, and the thickness of the alumite layer formed on the surface (here, the total thickness of the porous alumina layer and the base layer) is compared with, for example, 20 ⁇ m to 70 ⁇ m. It will be thick.
- the alumite treatment may be carried out by various known methods, but preferably the treatment conditions are appropriately selected so as to obtain an alumite layer effective to improve the heat dissipation.
- the alumite treatment in the present embodiment is not limited to the hard alumite treatment, and the same effect can be exhibited even with a normal alumite treatment. If the thickness of the alumite layer is also the thickness (for example, 1 ⁇ m or more) formed by the ordinary alumite treatment, the same effect is exhibited. However, the hard alumite treatment is less likely to be damaged during operation, and has the advantage of being able to reduce the concern that the film may be peeled off compared to the ordinary alumite treatment.
- the outer surface of the aluminum member whose entire surface is alumite treated that is, only the outer surface S2 disposed on the side opposite to the side facing the fluid heating portion 1 is reworked Do.
- removal of the alumite layer and mirror finishing are performed, whereby only the outer surface of the aluminum member becomes a mirror-finished surface, and the other surfaces are maintained as an anodized surface.
- the mirror-finished surface may be formed by performing grinding separately after removing the alumite layer by grinding, or may be formed only by grinding the alumite layer using a known mirror-finished grinding technique.
- the outer surface is mirror-finished, and the inner surface is anodized, these are combined to cover the outside of the fluid heating portion 1, and provided on the end surface of the side wall portion
- the heater can be manufactured by mounting the heating element 10a in the thin hole.
- the outer surface of the heat transfer member 10b is a mirror-finished surface, and all surfaces (including the inner surface and the end surface) other than the outer surface are subjected to an alumite treatment. Be a side.
- the end face of the heat transfer member 10b may also be subjected to a process for reducing the heat dissipation such as polishing.
- only the inner surface may be subjected to anodizing treatment, and all other surfaces may be mirror-finished or non-processed (non-treated after ordinary processing).
- the vaporization unit 4 includes a main body 40 configured by connecting a vaporization block 41 made of stainless steel and a gas heating block 42.
- the vaporization block body 41 has a liquid supply port formed at the top, and a vaporization chamber 41 a formed inside.
- a gas heating chamber 42a communicating with a gas flow path extending from the upper portion of the vaporization chamber 41a is formed, and a gas discharge port is formed in the upper portion.
- the gas heating chamber 42a has a structure in which a cylindrical heating accelerator is installed in a cylindrical space, and a gap between the cylindrical space and the heating accelerator is a gas flow path.
- a gas communication portion between the vaporization block 41 and the gas heating block 42 is provided with a through hole gasket 43, and the gas passes through the through holes of these through hole gaskets 43 to prevent pulsation of the gas. Ru.
- the preheating unit 2 includes a preheating block 21 connected to the vaporization block 41 of the vaporization unit 4 via the liquid filling valve 3.
- a liquid storage chamber 23 is formed in the preheating block 21.
- the liquid storage chamber 23 is in communication with the liquid inflow port 22 provided on the side surface and the liquid outlet provided on the upper surface.
- the preheating block 21 stores in the liquid storage chamber 23 the liquid source L pressure-fed at a predetermined pressure from a liquid storage tank (not shown), and uses the first heater 12 before supplying it to the vaporization chamber 41a. Preheat.
- a cylindrical heating accelerator may be disposed to increase the surface area also in the liquid storage chamber 23.
- the liquid filling valve 3 opens / closes or adjusts the opening degree of the supply passage 4 communicating with the preheating block 21 and the vaporization block body 41 by using a valve mechanism, so that the supply amount of the liquid raw material L to the vaporization unit 4 can be reduced.
- a valve mechanism for example, an air drive valve can be used as the liquid filling valve 3.
- a gasket 44 having pores formed therein is interposed at the liquid supply port of the vaporization block 41, and the liquid raw material is allowed to pass through the pores of the gasket 44 to adjust the supply amount into the vaporization chamber 41a.
- the fluid control unit 6 is a high-temperature compatible pressure-type control device, and may have the configuration described in Patent Document 2, for example.
- the high-temperature compatible pressure-type control device includes, for example, a valve block as a main body in which a gas flow passage is provided, a metal diaphragm valve interposed in the gas flow passage, and a heat dissipating spacer aligned in the vertical direction And a piezoelectric drive element, an orifice member (eg, an orifice plate) intervened in the gas flow path on the downstream side of the metal diaphragm valve body and having a fine hole formed therein, and a gas flow path between the metal diaphragm valve body and the orifice member And a pressure detector for flow control to detect the pressure of
- the heat dissipating spacer is formed of an invar material or the like, and prevents the piezoelectric drive element from exceeding the heat-resistant temperature even if a high temperature gas flows in the gas flow path.
- the metal diaphragm valve abuts against the valve seat and closes the gas flow path, while the piezoelectric drive element is expanded by energizing the piezoelectric drive element.
- the metal diaphragm valve body is configured to be restored to the original inverted bowl shape by the self-elastic force and the gas flow path is opened.
- FIG. 5 is a view schematically showing a configuration example of the fluid control unit 6 (pressure type flow control device).
- the orifice member 71 the control valve 80 composed of the metal diaphragm valve body and the piezoelectric drive element, the pressure detector 72 provided between the orifice member 71 and the control valve 80, and the temperature And a detector 73.
- the orifice member 71 is provided as a throttling portion, and instead, a critical nozzle or a sonic nozzle may be used.
- the diameter of the orifice or nozzle is set to, for example, 10 ⁇ m to 500 ⁇ m.
- the pressure detector 72 and the temperature detector 73 are connected to the control circuit 82 via an AD converter.
- the AD converter may be incorporated in the control circuit 82.
- the control circuit 82 is also connected to the control valve 80, generates a control signal based on the outputs of the pressure detector 72 and the temperature detector 73, and controls the operation of the control valve 80 by this control signal.
- the pressure type flow control device 6 can perform the same flow control operation as the conventional one, and can control the flow based on the upstream pressure P1 (pressure on the upstream side of the orifice member 71) using the pressure detector 72 .
- the pressure type flow control device 6 may also include a pressure detector on the downstream side of the orifice member 71, and is configured to detect the flow based on the upstream pressure P1 and the downstream pressure P2. It is also good.
- critical expansion conditions P1 / P2 ⁇ about 2 (where P1: gas pressure on the upstream side of the throttling portion (upstream pressure), P2: gas pressure on the downstream side of the throttling portion (downstream pressure),
- P1 gas pressure on the upstream side of the throttling portion (upstream pressure)
- P2 gas pressure on the downstream side of the throttling portion (downstream pressure)
- the flow velocity of the gas passing through the throttle is fixed at the speed of sound, and flow control is performed using the principle that the flow is determined not by the downstream pressure P2 but by the upstream pressure P1.
- the downstream pressure sensor When the downstream pressure sensor is provided, the difference between the upstream pressure P1 and the downstream pressure P2 is small, and the flow rate can be calculated even when the critical expansion condition is not satisfied.
- the flow rate Q can be calculated from the index derived on the basis of
- the control valve 80 is feedback-controlled so that the flow rate approaches the set flow rate input by the user.
- the flow rate obtained by the calculation may be displayed as a flow rate output value.
- the spacer block 50 is connected to the gas heating block 42, and the valve block of the fluid control device 6 is connected to the spacer block 50.
- the gas flow path in the flow path block 5 fixed so as to straddle the gas heating block 42 and the spacer block 50 brings the gas heating chamber 42 a of the gas heating block 42 into communication with the gas flow path of the spacer block 50.
- the gas flow path of the spacer block 50 is in communication with the gas flow path of the valve block of the fluid control device 6.
- a stop valve 56 is provided in the gas flow path on the downstream side of the fluid control unit 6, and the flow of gas can be shut off as needed.
- stop valve 56 for example, a known air drive valve or a solenoid valve can be used.
- the downstream side of the stop valve 56 is connected to, for example, the process chamber of the semiconductor manufacturing apparatus, and at the time of gas supply, the inside of the process chamber is depressurized by a vacuum pump and source gas of a predetermined flow rate is supplied to the process chamber.
- a fluid control apparatus can be used, for example, to supply a high temperature source gas to a process chamber in a semiconductor manufacturing apparatus for MOCVD.
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Abstract
Description
2 予加熱部
3 液体充填用バルブ
4 気化部
5 流路ブロック
6 流体加熱部
7 圧力検出器
10 ヒータ
12 第1ヒータ
14 第2ヒータ
16 第3ヒータ
71 オリフィス部材
80 コントロール弁
100 流体制御装置
Claims (8)
- 内部に流路または流体収容部が設けられた流体加熱部と、前記流体加熱部を加熱するヒータとを備える流体制御装置であって、
前記ヒータが、発熱体と、前記発熱体に熱的に接続され前記流体加熱部を囲むように配置された伝熱部材とを有し、
前記伝熱部材における前記流体加熱部に対向する面は、放熱性を向上させるために表面処理された面を含む、流体制御装置。 - 前記伝熱部材は、アルミニウムまたはアルミニウム合金から形成され、前記放熱性を向上させるために表面処理された面は、アルマイト処理された面である、請求項1に記載の流体制御装置。
- 前記伝熱部材は、前記流体加熱部に対向する面である内側面と、前記内側面の反対側に位置する外側面とを有し、前記外側面は研磨面を含む、請求項1または2に記載の流体制御装置。
- 前記伝熱部材は、前記流体加熱部に対向する面である内側面と、前記内側面の反対側に位置する外側面とを有し、前記外側面は鏡面加工された面を含む、請求項1または2に記載の流体制御装置。
- 前記伝熱部材は、アルミニウムまたはアルミニウム合金から形成され、前記伝熱部材の前記外側面は鏡面加工された面であり、前記伝熱部材の前記外側面以外の全ての面は、アルマイト処理された面である、請求項3または4に記載の流体制御装置。
- 気化部と、前記気化部に供給される液体を予加熱する予加熱部と、前記気化部から送出されたガスを制御または測定する流体制御測定部とを備え、
前記流体加熱部は、前記気化部、前記予加熱部および前記流体制御測定部のうちの少なくともいずれかである、請求項1から5のいずれかに記載の流体制御装置。 - 前記予加熱部を加熱する第1ヒータの伝熱部材と、前記気化部を加熱する第2ヒータの伝熱部材との間に隙間が設けられている、請求項6に記載の流体制御装置。
- 前記第1ヒータの伝熱部材と前記第2ヒータの伝熱部材との間の前記隙間に設けられた断熱部材をさらに備える、請求項7に記載の流体制御装置。
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JP2019532557A JP7132631B2 (ja) | 2017-07-25 | 2018-07-20 | 流体制御装置 |
US16/628,193 US20200149162A1 (en) | 2017-07-25 | 2018-07-20 | Fluid control device |
CN201880045775.7A CN110914959A (zh) | 2017-07-25 | 2018-07-20 | 流体控制装置 |
KR1020197034366A KR102338026B1 (ko) | 2017-07-25 | 2018-07-20 | 유체 제어 장치 |
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PCT/JP2018/027233 WO2019021948A1 (ja) | 2017-07-25 | 2018-07-20 | 流体制御装置 |
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US (1) | US20200149162A1 (ja) |
JP (1) | JP7132631B2 (ja) |
KR (1) | KR102338026B1 (ja) |
CN (1) | CN110914959A (ja) |
TW (1) | TWI674330B (ja) |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2021200227A1 (ja) * | 2020-03-30 | 2021-10-07 | ||
CN113892005A (zh) * | 2019-06-28 | 2022-01-04 | 株式会社富士金 | 流体控制装置 |
TWI754459B (zh) * | 2019-12-16 | 2022-02-01 | 日商富士金股份有限公司 | 氣化供給方法及氣化供給裝置 |
KR20230035405A (ko) | 2020-10-15 | 2023-03-13 | 가부시키가이샤 후지킨 | 압력 센서용의 커버 부품 및 이것을 구비하는 압력 센서 장치 |
KR20230042729A (ko) | 2020-10-31 | 2023-03-29 | 가부시키가이샤 후지킨 | 가스 공급 시스템 및 가스 공급 방법 |
KR20230049727A (ko) | 2020-12-23 | 2023-04-13 | 가부시키가이샤 후지킨 | 압력 센서 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11976356B2 (en) * | 2019-09-19 | 2024-05-07 | Fujikin Incorporated | Vaporized feed device |
WO2022025950A1 (en) * | 2020-07-28 | 2022-02-03 | Versum Materials Us, Llc | Systems having heated valve manifold assemblies, methods of manufacture of same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0428193A (ja) * | 1990-05-24 | 1992-01-30 | Asahi Glass Co Ltd | 薄型板状遠赤外線放射ヒータ |
JP2007250448A (ja) * | 2006-03-17 | 2007-09-27 | Hakko Electric Mach Works Co Ltd | 可撓性面状発熱体 |
JP2009252760A (ja) * | 2008-04-01 | 2009-10-29 | Fujikin Inc | 気化器を備えたガス供給装置 |
WO2013160812A1 (en) * | 2012-04-23 | 2013-10-31 | Laborvetro Di Antonello Marano | A heating group |
JP2014114463A (ja) * | 2012-12-06 | 2014-06-26 | Fujikin Inc | 原料気化供給装置 |
JP2015023018A (ja) * | 2013-07-24 | 2015-02-02 | 日本電熱株式会社 | 加熱体 |
JP2015045340A (ja) * | 2008-07-01 | 2015-03-12 | ブルックス オートメーション インコーポレイテッド | 輻射シールド、極低温ユニットおよびクライオポンプ |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7031600B2 (en) * | 2003-04-07 | 2006-04-18 | Applied Materials, Inc. | Method and apparatus for silicon oxide deposition on large area substrates |
JP6578125B2 (ja) | 2015-04-30 | 2019-09-18 | 株式会社フジキン | 気化供給装置 |
-
2018
- 2018-07-20 KR KR1020197034366A patent/KR102338026B1/ko active IP Right Grant
- 2018-07-20 JP JP2019532557A patent/JP7132631B2/ja active Active
- 2018-07-20 CN CN201880045775.7A patent/CN110914959A/zh active Pending
- 2018-07-20 WO PCT/JP2018/027233 patent/WO2019021948A1/ja active Application Filing
- 2018-07-20 US US16/628,193 patent/US20200149162A1/en not_active Abandoned
- 2018-07-25 TW TW107125647A patent/TWI674330B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0428193A (ja) * | 1990-05-24 | 1992-01-30 | Asahi Glass Co Ltd | 薄型板状遠赤外線放射ヒータ |
JP2007250448A (ja) * | 2006-03-17 | 2007-09-27 | Hakko Electric Mach Works Co Ltd | 可撓性面状発熱体 |
JP2009252760A (ja) * | 2008-04-01 | 2009-10-29 | Fujikin Inc | 気化器を備えたガス供給装置 |
JP2015045340A (ja) * | 2008-07-01 | 2015-03-12 | ブルックス オートメーション インコーポレイテッド | 輻射シールド、極低温ユニットおよびクライオポンプ |
WO2013160812A1 (en) * | 2012-04-23 | 2013-10-31 | Laborvetro Di Antonello Marano | A heating group |
JP2014114463A (ja) * | 2012-12-06 | 2014-06-26 | Fujikin Inc | 原料気化供給装置 |
JP2015023018A (ja) * | 2013-07-24 | 2015-02-02 | 日本電熱株式会社 | 加熱体 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113892005A (zh) * | 2019-06-28 | 2022-01-04 | 株式会社富士金 | 流体控制装置 |
TWI754459B (zh) * | 2019-12-16 | 2022-02-01 | 日商富士金股份有限公司 | 氣化供給方法及氣化供給裝置 |
JPWO2021200227A1 (ja) * | 2020-03-30 | 2021-10-07 | ||
WO2021200227A1 (ja) * | 2020-03-30 | 2021-10-07 | 株式会社フジキン | ガス供給量測定方法およびガス供給量制御方法 |
KR20220104825A (ko) | 2020-03-30 | 2022-07-26 | 가부시키가이샤 후지킨 | 가스 공급량 측정 방법 및 가스 공급량 제어 방법 |
TWI786577B (zh) * | 2020-03-30 | 2022-12-11 | 日商富士金股份有限公司 | 氣體供給量測定方法以及氣體供給量控制方法 |
JP7376959B2 (ja) | 2020-03-30 | 2023-11-09 | 株式会社フジキン | ガス供給量測定方法およびガス供給量制御方法 |
KR20230035405A (ko) | 2020-10-15 | 2023-03-13 | 가부시키가이샤 후지킨 | 압력 센서용의 커버 부품 및 이것을 구비하는 압력 센서 장치 |
KR20230042729A (ko) | 2020-10-31 | 2023-03-29 | 가부시키가이샤 후지킨 | 가스 공급 시스템 및 가스 공급 방법 |
KR20230049727A (ko) | 2020-12-23 | 2023-04-13 | 가부시키가이샤 후지킨 | 압력 센서 |
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JP7132631B2 (ja) | 2022-09-07 |
US20200149162A1 (en) | 2020-05-14 |
TWI674330B (zh) | 2019-10-11 |
JPWO2019021948A1 (ja) | 2020-06-11 |
TW201920761A (zh) | 2019-06-01 |
KR20190140001A (ko) | 2019-12-18 |
CN110914959A (zh) | 2020-03-24 |
KR102338026B1 (ko) | 2021-12-10 |
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