KR101610638B1 - 기상 성장 장치 및 기상 성장 방법 - Google Patents

기상 성장 장치 및 기상 성장 방법 Download PDF

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KR101610638B1
KR101610638B1 KR1020140010238A KR20140010238A KR101610638B1 KR 101610638 B1 KR101610638 B1 KR 101610638B1 KR 1020140010238 A KR1020140010238 A KR 1020140010238A KR 20140010238 A KR20140010238 A KR 20140010238A KR 101610638 B1 KR101610638 B1 KR 101610638B1
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gas flow
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KR20140098000A (ko
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다쿠미 야마다
유우스케 사토
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가부시키가이샤 뉴플레어 테크놀로지
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020140010238A 2013-01-30 2014-01-28 기상 성장 장치 및 기상 성장 방법 Active KR101610638B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013016015A JP6134522B2 (ja) 2013-01-30 2013-01-30 気相成長装置および気相成長方法
JPJP-P-2013-016015 2013-01-30

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KR20140098000A KR20140098000A (ko) 2014-08-07
KR101610638B1 true KR101610638B1 (ko) 2016-04-08

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US (1) US9624603B2 (https=)
JP (1) JP6134522B2 (https=)
KR (1) KR101610638B1 (https=)
CN (1) CN103966574B (https=)
DE (1) DE102014201554A1 (https=)
TW (1) TWI494469B (https=)

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JP6199619B2 (ja) * 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
JP6153401B2 (ja) * 2013-07-02 2017-06-28 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
KR102215965B1 (ko) * 2014-04-11 2021-02-18 주성엔지니어링(주) 가스 분사 장치 및 이를 포함하는 기판 처리 장치
CN104120408B (zh) * 2014-08-06 2016-09-07 上海世山科技有限公司 一种改进衬底气流方向的hvpe反应器
KR102267923B1 (ko) * 2014-08-26 2021-06-22 에이에스엠 아이피 홀딩 비.브이. 증착 장치
JP6386901B2 (ja) * 2014-12-17 2018-09-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
JP6193284B2 (ja) * 2015-03-18 2017-09-06 株式会社東芝 流路構造、吸排気部材、及び処理装置
JP6054470B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
JP5990626B1 (ja) * 2015-05-26 2016-09-14 株式会社日本製鋼所 原子層成長装置
JP6054471B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
KR102269479B1 (ko) * 2016-12-08 2021-06-24 어플라이드 머티어리얼스, 인코포레이티드 시간적 원자 층 증착 프로세싱 챔버
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CN111052308A (zh) 2017-09-01 2020-04-21 纽富来科技股份有限公司 气相生长装置及气相生长方法
US11149350B2 (en) * 2018-01-10 2021-10-19 Asm Ip Holding B.V. Shower plate structure for supplying carrier and dry gas
JP7012613B2 (ja) * 2018-07-13 2022-01-28 東京エレクトロン株式会社 成膜方法及び成膜装置
JP7365761B2 (ja) * 2018-08-24 2023-10-20 株式会社ニューフレアテクノロジー 気相成長装置
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
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CN110158055B (zh) * 2019-05-15 2022-01-14 拓荆科技股份有限公司 多段喷淋组件
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
WO2020263750A1 (en) * 2019-06-27 2020-12-30 Lam Research Corporation Apparatus for photoresist dry deposition
KR20250160237A (ko) 2019-06-28 2025-11-11 램 리써치 코포레이션 복수의 패터닝 복사-흡수 엘리먼트들 및/또는 수직 조성 경사를 갖는 포토레지스트
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US12060652B2 (en) 2019-11-27 2024-08-13 Sino Nitride Semiconductor Co., Ltd. Linear showerhead for growing GaN
CN111020693B (zh) * 2019-12-27 2021-01-29 季华实验室 一种碳化硅外延生长设备的进气装置
SG11202108851RA (en) 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
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CN114107953A (zh) * 2021-09-18 2022-03-01 江苏微导纳米科技股份有限公司 原子层沉积装置及其喷淋板
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KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
CN116240525B (zh) * 2022-12-15 2025-06-24 江苏微导纳米科技股份有限公司 喷淋板及处理装置
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KR20140098000A (ko) 2014-08-07
JP6134522B2 (ja) 2017-05-24
TWI494469B (zh) 2015-08-01
CN103966574A (zh) 2014-08-06
DE102014201554A1 (de) 2014-07-31
US9624603B2 (en) 2017-04-18
TW201430166A (zh) 2014-08-01
US20140209015A1 (en) 2014-07-31
JP2014146767A (ja) 2014-08-14
CN103966574B (zh) 2017-04-12

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