KR101588522B1 - 내식성 알루미늄 합금 본딩 와이어 - Google Patents

내식성 알루미늄 합금 본딩 와이어 Download PDF

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Publication number
KR101588522B1
KR101588522B1 KR1020140056589A KR20140056589A KR101588522B1 KR 101588522 B1 KR101588522 B1 KR 101588522B1 KR 1020140056589 A KR1020140056589 A KR 1020140056589A KR 20140056589 A KR20140056589 A KR 20140056589A KR 101588522 B1 KR101588522 B1 KR 101588522B1
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KR
South Korea
Prior art keywords
aluminum
aluminum alloy
bonding wire
wire
alloy bonding
Prior art date
Application number
KR1020140056589A
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English (en)
Korean (ko)
Other versions
KR20140135105A (ko
Inventor
히로유키 아마노
신이치로 나카시마
츠카사 이치카와
미치타카 미카미
Original Assignee
타나카 덴시 코오교오 카부시키가이샤
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Publication of KR20140135105A publication Critical patent/KR20140135105A/ko
Application granted granted Critical
Publication of KR101588522B1 publication Critical patent/KR101588522B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
KR1020140056589A 2013-05-15 2014-05-12 내식성 알루미늄 합금 본딩 와이어 KR101588522B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-103262 2013-05-15
JP2013103262A JP5680138B2 (ja) 2013-05-15 2013-05-15 耐食性アルミニウム合金ボンディングワイヤ

Publications (2)

Publication Number Publication Date
KR20140135105A KR20140135105A (ko) 2014-11-25
KR101588522B1 true KR101588522B1 (ko) 2016-01-25

Family

ID=51908572

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140056589A KR101588522B1 (ko) 2013-05-15 2014-05-12 내식성 알루미늄 합금 본딩 와이어

Country Status (4)

Country Link
JP (1) JP5680138B2 (ja)
KR (1) KR101588522B1 (ja)
CN (1) CN104164591B (ja)
SG (1) SG10201402300TA (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101610519B1 (ko) 2014-10-07 2016-04-20 현대자동차주식회사 Hev차량의 냉각시스템 및 그 제어방법
CN107739919A (zh) * 2017-11-02 2018-02-27 陈礼成 一种高强度铝镁合金及其制备方法
TW202235634A (zh) 2021-02-05 2022-09-16 日商日鐵新材料股份有限公司 半導體裝置用Al接合線
TW202239983A (zh) * 2021-02-05 2022-10-16 日商日鐵新材料股份有限公司 鋁配線材料
CN113584355A (zh) * 2021-08-03 2021-11-02 上杭县紫金佳博电子新材料科技有限公司 一种键合用铝基合金母线及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311383A (ja) 2007-06-14 2008-12-25 Ibaraki Univ ボンディングワイヤ、それを使用したボンディング方法及び半導体装置並びに接続部構造
JP4771562B1 (ja) 2011-02-10 2011-09-14 田中電子工業株式会社 Ａｇ−Ａｕ−Ｐｄ三元合金系ボンディングワイヤ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928553A (ja) * 1982-08-11 1984-02-15 Hitachi Ltd 耐食性アルミニウム配線材料
JPS5956737A (ja) 1982-09-25 1984-04-02 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用Ａｌ線
JPS60198851A (ja) * 1984-03-23 1985-10-08 Hitachi Ltd 半導体用高耐食高硬度ボール付アルミニウム合金ワイヤ
JPS6132444A (ja) * 1984-07-24 1986-02-15 Hitachi Ltd 集積回路装置
JPH03148841A (ja) * 1990-10-19 1991-06-25 Hitachi Ltd 耐食性アルミニウム電子装置
JP2525953B2 (ja) * 1990-11-20 1996-08-21 日立化成工業株式会社 半導体装置
JPH0771562B2 (ja) * 1992-10-14 1995-08-02 鈴木金属工業株式会社 歯科用材料
JP2873770B2 (ja) * 1993-03-19 1999-03-24 新日本製鐵株式会社 半導体素子のワイヤボンディング用パラジウム細線
JP3542867B2 (ja) * 1996-04-04 2004-07-14 新日本製鐵株式会社 半導体装置
WO2012011447A1 (ja) * 2010-07-20 2012-01-26 古河電気工業株式会社 アルミニウム合金導体及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311383A (ja) 2007-06-14 2008-12-25 Ibaraki Univ ボンディングワイヤ、それを使用したボンディング方法及び半導体装置並びに接続部構造
JP4771562B1 (ja) 2011-02-10 2011-09-14 田中電子工業株式会社 Ａｇ−Ａｕ−Ｐｄ三元合金系ボンディングワイヤ

Also Published As

Publication number Publication date
JP5680138B2 (ja) 2015-03-04
CN104164591B (zh) 2017-01-04
JP2014224283A (ja) 2014-12-04
KR20140135105A (ko) 2014-11-25
SG10201402300TA (en) 2014-12-30
CN104164591A (zh) 2014-11-26

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