SG10201402300TA - Corrosion-resistant aluminum alloy bonding wire - Google Patents

Corrosion-resistant aluminum alloy bonding wire

Info

Publication number
SG10201402300TA
SG10201402300TA SG10201402300TA SG10201402300TA SG10201402300TA SG 10201402300T A SG10201402300T A SG 10201402300TA SG 10201402300T A SG10201402300T A SG 10201402300TA SG 10201402300T A SG10201402300T A SG 10201402300TA SG 10201402300T A SG10201402300T A SG 10201402300TA
Authority
SG
Singapore
Prior art keywords
aluminum
corrosion
bonding wire
alloy bonding
aluminum alloy
Prior art date
Application number
SG10201402300TA
Inventor
Hiroyuki Amano
Shinichiro Nakashima
Tsukasa Ichikawa
Michitaka Mikami
Original Assignee
Tanaka Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Electronics Ind filed Critical Tanaka Electronics Ind
Publication of SG10201402300TA publication Critical patent/SG10201402300TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)

Abstract

[Abstract] [Title of Invention] CORROSION-RESISTANT ALUMINUM ALLOY BONDING WIRE [Problem to be Solved] To inhibit intergranular corrosion of a high-purity aluminum wire for connecting semiconductor devices under a high-temperature and high-humidity environment. [Solution] An aluminum alloy bonding wire comprising high- purity aluminum having a purity of 99.99% by mass or more and 10 to 200 ppm by mass of rhodium (Rh) and/or palladium (Pd) is provided. The rhodium and/or palladium element is forcibly solid-soluted to form a dispersed phase of an intermetallic compound with aluminum in an aluminum matrix having a grain size of 10 to 100 ym. Rhodium (Rh) and palladium (Pd) prevent atomic hydrogen generated on the aluminum surface from diffusing and infiltrating into the aluminum matrix by converting the atomic hydrogen into H 2 by the catalytic function and inhibit intergranular corrosion by binding of atomic hydrogen into H . 2 [Selected drawing] Fig. 1 18
SG10201402300TA 2013-05-15 2014-05-14 Corrosion-resistant aluminum alloy bonding wire SG10201402300TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013103262A JP5680138B2 (en) 2013-05-15 2013-05-15 Corrosion resistant aluminum alloy bonding wire

Publications (1)

Publication Number Publication Date
SG10201402300TA true SG10201402300TA (en) 2014-12-30

Family

ID=51908572

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201402300TA SG10201402300TA (en) 2013-05-15 2014-05-14 Corrosion-resistant aluminum alloy bonding wire

Country Status (4)

Country Link
JP (1) JP5680138B2 (en)
KR (1) KR101588522B1 (en)
CN (1) CN104164591B (en)
SG (1) SG10201402300TA (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101610519B1 (en) 2014-10-07 2016-04-20 현대자동차주식회사 A cooling system of hev-vehicle and a control method thereof
CN107739919A (en) * 2017-11-02 2018-02-27 陈礼成 A kind of high-strength aluminium-magnesium alloy and preparation method thereof
TW202235634A (en) 2021-02-05 2022-09-16 日商日鐵新材料股份有限公司 Al bonding wire for semiconductor devices
TW202239983A (en) * 2021-02-05 2022-10-16 日商日鐵新材料股份有限公司 Al wiring material
CN113584355A (en) * 2021-08-03 2021-11-02 上杭县紫金佳博电子新材料科技有限公司 Aluminum-based alloy bus for bonding and preparation method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928553A (en) * 1982-08-11 1984-02-15 Hitachi Ltd Corrosion resistant aluminum electronic material
JPS5956737A (en) 1982-09-25 1984-04-02 Tanaka Denshi Kogyo Kk Aluminum lead wire for bonding of semiconductor element
JPS60198851A (en) * 1984-03-23 1985-10-08 Hitachi Ltd High corrosion resistant high hardness aluminum alloy wire for semiconductor
JPS6132444A (en) * 1984-07-24 1986-02-15 Hitachi Ltd Ic device
JPH03148841A (en) * 1990-10-19 1991-06-25 Hitachi Ltd Corrosion resistant aluminum electronic device
JP2525953B2 (en) * 1990-11-20 1996-08-21 日立化成工業株式会社 Semiconductor device
JPH0771562B2 (en) * 1992-10-14 1995-08-02 鈴木金属工業株式会社 Dental material
JP2873770B2 (en) * 1993-03-19 1999-03-24 新日本製鐵株式会社 Palladium fine wire for wire bonding of semiconductor devices
JP3542867B2 (en) * 1996-04-04 2004-07-14 新日本製鐵株式会社 Semiconductor device
JP2008311383A (en) * 2007-06-14 2008-12-25 Ibaraki Univ Bonding wire, bonding method using the same, and semiconductor device as well as joint construction
WO2012011447A1 (en) * 2010-07-20 2012-01-26 古河電気工業株式会社 Aluminium alloy conductor and manufacturing method for same
JP4771562B1 (en) 2011-02-10 2011-09-14 田中電子工業株式会社 Ag-Au-Pd ternary alloy bonding wire

Also Published As

Publication number Publication date
JP5680138B2 (en) 2015-03-04
CN104164591B (en) 2017-01-04
JP2014224283A (en) 2014-12-04
KR20140135105A (en) 2014-11-25
KR101588522B1 (en) 2016-01-25
CN104164591A (en) 2014-11-26

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