TWI409015B - - Google Patents

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Publication number
TWI409015B
TWI409015B TW100102661A TW100102661A TWI409015B TW I409015 B TWI409015 B TW I409015B TW 100102661 A TW100102661 A TW 100102661A TW 100102661 A TW100102661 A TW 100102661A TW I409015 B TWI409015 B TW I409015B
Authority
TW
Taiwan
Prior art keywords
substitution
palladium plating
palladium
plating layer
reduced
Prior art date
Application number
TW100102661A
Other languages
Chinese (zh)
Other versions
TW201233280A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW100102661A priority Critical patent/TW201233280A/en
Priority to CN2011101925171A priority patent/CN102605359A/en
Priority to JP2011229483A priority patent/JP2012153974A/en
Priority to US13/326,370 priority patent/US20120186852A1/en
Priority to KR1020120005470A priority patent/KR20120086253A/en
Publication of TW201233280A publication Critical patent/TW201233280A/en
Application granted granted Critical
Publication of TWI409015B publication Critical patent/TWI409015B/zh

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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05164Palladium [Pd] as principal constituent
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    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
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    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract

The present invention provides a manufacturing method of chemical palladium-gold plating film. It uses the substitution reaction to form a substitution palladium plating layer on a solder pad, then, and the reduction reaction on the substitution palladium plating layer to form a reduced palladium plating on the substitution palladium plating layer. The method eventually uses the substitution palladium plating layer, the reduced palladium plating or a substitution-reduced palladium plating reacts on the reduced palladium plating to form a gold plating layer. The present invention uses a thicker palladium plating to replace the use of a conventional nickel layer, so as to increase the wire binding strength between the copper or palladium-gold wires and the solder pad.
TW100102661A 2011-01-25 2011-01-25 Chemical palladium-gold plating film method TW201233280A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW100102661A TW201233280A (en) 2011-01-25 2011-01-25 Chemical palladium-gold plating film method
CN2011101925171A CN102605359A (en) 2011-01-25 2011-06-28 Chemical palladium-gold plated film structure and manufacturing method thereof, copper wire or palladium-gold plated film packaging structure jointed by palladium-copper wire and packaging process thereof
JP2011229483A JP2012153974A (en) 2011-01-25 2011-10-19 Chemical palladium/gold plating film structure, method for production thereof, palladium/gold plating film package structure bonded with copper wire or palladium/copper wire, and packaging process thereof
US13/326,370 US20120186852A1 (en) 2011-01-25 2011-12-15 Structure of electrolessly palladium and gold plated films and process for making the same, assembled structure of palladium and gold plated films bonded with copper or copper-palladium wire and assembling process therefore
KR1020120005470A KR20120086253A (en) 2011-01-25 2012-01-18 Structure of electrolessly palladium and gold plated films and Process for making the same, Assembled structure of palladium and gold plated films bonded with copper or copper-palladium wire and Assembling process therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100102661A TW201233280A (en) 2011-01-25 2011-01-25 Chemical palladium-gold plating film method

Publications (2)

Publication Number Publication Date
TW201233280A TW201233280A (en) 2012-08-01
TWI409015B true TWI409015B (en) 2013-09-11

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Application Number Title Priority Date Filing Date
TW100102661A TW201233280A (en) 2011-01-25 2011-01-25 Chemical palladium-gold plating film method

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201636454A (en) * 2015-04-10 2016-10-16 Taiwan Uyemura Co Ltd Method for preparing chemical palladium- silver coating films and its structure
TWI542729B (en) 2015-07-09 2016-07-21 旭德科技股份有限公司 Circuit board and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI251920B (en) * 2003-10-17 2006-03-21 Phoenix Prec Technology Corp Circuit barrier structure of semiconductor package substrate and method for fabricating the same
TW200908180A (en) * 2007-07-17 2009-02-16 Shinko Electric Ind Co Solder bump forming method
TWI328847B (en) * 2005-12-06 2010-08-11 Seiko Epson Corp Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit board, and electronic device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI251920B (en) * 2003-10-17 2006-03-21 Phoenix Prec Technology Corp Circuit barrier structure of semiconductor package substrate and method for fabricating the same
TWI328847B (en) * 2005-12-06 2010-08-11 Seiko Epson Corp Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit board, and electronic device
TW200908180A (en) * 2007-07-17 2009-02-16 Shinko Electric Ind Co Solder bump forming method

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