TW200908180A - Solder bump forming method - Google Patents
Solder bump forming method Download PDFInfo
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- TW200908180A TW200908180A TW097127081A TW97127081A TW200908180A TW 200908180 A TW200908180 A TW 200908180A TW 097127081 A TW097127081 A TW 097127081A TW 97127081 A TW97127081 A TW 97127081A TW 200908180 A TW200908180 A TW 200908180A
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- metal film
- conductive ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
Abstract
Description
200908180 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種焊料凸塊形成方法，以及更特別地 是有關於一種如下的焊料凸塊形成方法，其在一佈線板、 :像晶片尺寸封裝之封裝或一像半導體晶片之基板上所 提供之複數個焊墊的每—焊墊上安裝—導電球，藉以形成 該焊料凸塊。 【先前技術】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solder bump forming method, and more particularly to a solder bump forming method in which a wiring board, an image wafer A conductive ball is mounted on each of the plurality of pads provided on the package of the size package or a plurality of pads provided on the substrate of the semiconductor wafer to form the solder bump. [Prior Art]
圖1係顯示一相關技藝基板之剖面圖。 *參考圖1，一相關技藝基板1〇具有一基板本體U、一 2穿電極12、複數個焊墊13及16、防焊層14及17以及 :焊料凸& 19。下面將採用—做為半導體封裳之佈線板 來做為该基板1 〇之實例來描述。 該貫穿電極12係提供用以穿過該基板本體u。該 電極12之下端連接至該焊墊13及該貫穿電極a ^上浐 連接至該烊墊16。該貫穿電極12用以電 而 至該焊墊16。 咬较通斗墊13 4 = 13係提供於該基板本體U之下表面…上。 ㈣Μ 13具有連接部13A做為該基板ig之 鳊。該等焊墊13連接至該貫穿電極12之下端。D連接 該防焊層14係提供於該基板本體u之 ㈣蓋該等料13之除了該連接部m之表面^上’ 該防焊層U具有—用以暴露該連 ^匕部 14A。 之開口部 97127081 200908180 該等焊墊16係提供於該基板本體丨丨之上表面11β上。 該等焊塾1 6具有一凸塊形成區域！ 6Α。該凸塊形成區域 1 6Α係一形成該焊料凸塊丨9之區域且亦是一提供一用以 暫時固定-做為該焊料凸塊19之導電球至該凸塊形成區 域16Α之助炫劑的區域。 該防焊層17係提供於該基板本體u 二覆蓋該等焊墊16之除了該凸塊形成區域^之了的上其 二焊層17具有-用以暴露該凸塊形成區箱 ::二19係提供於該等焊墊16之凸塊形成區域 6A中。料料凸塊19做為該基板1()之—連接端。該焊 料凸塊19例如電性連接至一電 片）。 罨子令件（例如，一半導體晶 圖2至7係顯示一相關技藝焊料凸換 在圖2至7中，相同於圖i所;=:=製程之視圖。 件具有相同元件符號。 μ之相關技藝基板10的零 參考圖2至7，將提供一相關妯菇 首先，在^ 藝之烊料凸塊形成方法。 百无在圖2所示之步驟中 …左 基板10之複數個其具有在内部要形成一 之複數個基板形成區幻的 一已知方法在該基底㈣21 1^、 /针」1以及以 個谭墊13及16以及防痒層14幻^穿電極&複數 圖7所示之步驟中沿著— 下面所要描述之 因而使該基底材料 接下來，在® 3 土板^體11。 也成一助熔劑23，以 97127081 200908180 值盍°亥等烊墊16之凸塊形成區域16A。更特· 37所示’在使一助炫 ·^特別地，如圖 :焊層π之開口物對準之狀態中在之= 之裝置（未顯示），將兮臥松# 用以塗抹該助熔劑 子》亥助炫劑經由該助熔Figure 1 is a cross-sectional view showing a related art substrate. Referring to Fig. 1, a related art substrate 1A has a substrate body U, a through electrode 12, a plurality of pads 13 and 16, solder resist layers 14 and 17 and a solder bump & In the following, a wiring board as a semiconductor package will be described as an example of the substrate 1 . The through electrode 12 is provided to pass through the substrate body u. The lower end of the electrode 12 is connected to the pad 13 and the through electrode a is connected to the pad 16. The through electrode 12 is used to electrically connect to the pad 16. A bite-like bucket pad 13 4 = 13 is provided on the lower surface of the substrate body U. (4) The crucible 13 has the connection portion 13A as the substrate ig. The pads 13 are connected to the lower end of the through electrode 12. D. The solder resist layer 14 is provided on the substrate body u. (4) The surface of the material 13 except the surface of the connecting portion m. The solder resist layer U has a surface for exposing the connecting portion 14A. The opening portion 97127081 200908180 The pads 16 are provided on the upper surface 11β of the substrate body 丨丨. The solder fillets 16 have a bump forming area! 6Α. The bump forming region 16 is formed in a region where the solder bump 9 is formed, and is also provided as a lubricant to temporarily fix the conductive ball as the solder bump 19 to the bump forming region 16 Area. The solder resist layer 17 is provided on the substrate body u to cover the solder pads 16 except for the bump forming region, and the solder layer 17 has a surface for exposing the bump forming region box: 19 series are provided in the bump forming regions 6A of the pads 16. The material bump 19 serves as a connection end of the substrate 1 (). The solder bumps 19 are electrically connected, for example, to a wafer. The scorpion command (for example, a semiconductor crystal 2 to 7 shows a related art solder bump in Figures 2 to 7, the same as in Figure i; =: = process view. The parts have the same component symbol. Referring to Figures 2 to 7 of the related art substrate 10, a related mushroom can be provided. First, a method of forming a bump in the art is performed. In the step shown in Fig. 2, a plurality of the left substrate 10 have A known method for forming a plurality of substrate formation regions in the interior is in the substrate (4) 21 1^, / pin "1", and a tan pad 13 and 16 and an anti-itch layer 14 are etched into the electrode & The steps shown are along the following - thus described, so that the base material is next, in the ® 3 earth plate body 11. Also formed as a flux 23, with the value of 97127081 200908180 盍°hai et al. Area 16A. More specifically, as shown in Fig. 37, 'in the case of making a helper ^, in particular, as shown in the figure: the state in which the opening of the solder layer π is aligned = (not shown), Applying the fluxing agent
塗抹至該凸塊形成區域16A。 沁形成罩幕23A 隨後，在圖4所亍#丰_丄 你口 4尸/Γ不之步驟中，將圖3所 一導電球安裝裝置24之一平A „，之、、'°構固疋至 1罩幕26具有g&置在圖3 I電球安裝 安穿孔2fi A » 之、，Ό構上方之複數個導電球 別谭塾16之凸塊形成區域_上分 上方供應兮篝言十之孔）。然後，從該導電球安裝罩幕26 平台2、5^動¥电球28,以及使該導電球安裝罩幕26及 Γ "b，以便在該等焊塾16之形成有該助炼劑23 的母：凸塊形成區域16A上安裝該導電球28。It is applied to the bump forming region 16A.沁 Forming the mask 23A Subsequently, in the step of Fig. 4, the one of the conductive ball mounting devices 24 of Fig. 3 is flat A „, , , , ,°° To the mask 26 has a g& placed in the Figure 3 I ball mounted annulus 2fi A », a plurality of conductive balls above the structure of the 塾 塾 塾 塾 塾 之 之 之 之 之 _ _ _ _ _ _ _ _ _ Then, the shield ball 26 is mounted from the conductive ball 26 platform 2, the motor ball 28 is mounted, and the conductive ball is mounted to the mask 26 and the Γ "b so as to form the solder ball 16 The mother ball of the refining agent 23: the conductive ball 28 is mounted on the bump forming region 16A.
U J二5所示之步驟中’從該導電球安裝裝置24 3台5移除圖4所示之結構。之後，在圖6所示之步 驟^，使圖5所示之導電球28經歷一回流處理，以便在 该專焊墊16之凸塊形成區域16A上形成谭料凸塊19。 之後在圖7所不之步驟+，沿著該切割位置κ切割圖 所不之結構。結果，製造該等基板10(例如，見專利文 件1)。 ^專利文件1]日本專利申請案公告第u_297886號 ^而’在圖37中之用以形成該助熔劑之製程t，會有 下面問題:產生該助熔劑形成罩幕23A之開口部23B與該 97127081 200908180 二？ 7A之相對失準，因而形成未被塗抹 =凸塊形成區域16A上之助㈣或被塗抹在該防焊層 熔劑。在此情況中’產生上面沒有安裝 =1; 6。再者，具有下面問題:在不是該焊 … Μ上安裝該導電球28 ’然後在回流處理下 球28溶化及流出’因而造成像相鄰焊球間之短 路的問題。 縱使該助溶劑形成罩幕23Α之開口部23β與該防焊層 之广’口部m適當對準，該助熔劑之黏性係低的，因 此，该助炼劑浅漏至該助溶劑形成罩幕23A與該防焊 Π間之間隙及該防焊層17與該基底材料21間之間隙。 ，後’具有下面問題，該助_之—部分黏著至該防焊層 7之表面及該助熔劑之塗抹面積變大，因此，可能在一 焊墊上安裝複數個導電球。 再者，在用以製造該基板10之製程中，對於每一個所 要製造之基板10而言，在該基板本體u上方之該焊墊 16及該防焊層17之開口部（用以暴露該凸塊形成區域16A 之開口部）的位置或尺寸會產生變化。 另方面，在该等導電球安裝罩幕26上所提供之導電 球安裝孔26A係幾乎形成於設計位置中。 圖8係用以言兒明該相關技藝之焊料凸塊形成方法之問 題的視圖。 >因此，在該相關技藝之焊料凸塊形成方法中，藉由使用 該導電球安裝罩幕26以在該等烊墊16上安裝該等導電球 97127081 200908180 28之情況中’如目8所示，具有下面問題：產 球t裝ί26Α與該凸塊形成區域16A之相對失準及產生上 導電球28之焊墊16。隨著該焊墊16或該導 包表28之精細的增加，該問題更加值得注音。 此外，該相關技藝之焊料凸塊形成方法具；下面問題: 因為使用該導電球安裝罩幕26，所以增加該基板1〇之製 造成本。 【發明内容】 本發明之示範性具體例提供_種焊料凸塊形成方法，其 能降低成本及可靠地在每—焊墊上安裝一導電球。 本發明之-態樣係有關於一種焊料凸塊形成方法，該方 法對在複數個焊藝上所安裳之一導電球實施一回流處 理，猎以形成-焊料凸塊，該方法包括：一金屬膜形成步 驟’形成-能與-膠黏化合物（tackifying c〇mp〇und)化 學反應之金屬膜於該等焊墊上；—有機黏著層形成步驟， 使-含有該膠黏化合物之溶液與該金屬膜化學反應，藉以 形成-有機黏著層於該金屬膜上；以及一導電球安裝步 驟，供應該導電球於該有機黏著層上，藉以經由該有機黏 著層及該金屬膜安裝該導電球於該等焊墊上。 依據本發明’在該等焊塾上形成能與該膠黏化合物化學 反應之該金屬Μ，然後使該膠黏化合物與該金屬膜化學反 應，以在該金屬膜上形成該有機黏著層。結果，亦在該金 屬膜之上面要形成該有機黏著層的部&具有小面積的情 況中’可允許在該金屬膜上形成一具有幾乎相同厚度之有 97127081 10 200908180 機黏著層。因此，當在該等焊墊上安裝該導電球時，可允 許經j該有機黏著層及該金屬膜在該等焊墊之每一焊墊 上可靠地安裝一導電球，而不使用該相闕技藝令所需之導 電球安裝罩幕。此外，因為不需要該導電球安裝罩幕，所 以可允許降低形成有該等焊墊之結構的製造成本。In the step shown by U J ii 5, the structure shown in Fig. 4 is removed from the conductive ball mounting device 243. Thereafter, in the step shown in Fig. 6, the conductive ball 28 shown in Fig. 5 is subjected to a reflow process to form a tan bump 19 on the bump forming region 16A of the pad. Then, in the step + which is not shown in Fig. 7, the structure of the figure is cut along the cutting position κ. As a result, the substrates 10 are manufactured (for example, see Patent Document 1). ^Patent Document 1] Japanese Patent Application Publication No. U_297886, and the process t for forming the flux in Fig. 37 has the following problem: the opening portion 23B which generates the flux forming mask 23A and the 97127081 200908180 Second? The relative misalignment of 7A, thus forming uncoated smudges on the bump forming region 16A (4) or being applied to the solder resist flux. In this case 'production is not installed above =1; 6. Further, there is a problem in that the conductive ball 28' is mounted on the solder 然后 and then the ball 28 is melted and discharged under the reflow process, thereby causing a problem of a short circuit between adjacent solder balls. Even if the opening portion 23β of the auxiliary solvent forming mask 23 is properly aligned with the wide mouth portion m of the solder resist layer, the viscosity of the flux is low, and therefore, the fluxing agent is shallowly leaked to the auxiliary solvent. The gap between the mask 23A and the solder mask and the gap between the solder resist layer 17 and the base material 21. The latter has the following problem, the adhesion of the auxiliary portion to the surface of the solder resist layer 7 and the application area of the flux become large, and therefore, a plurality of conductive balls may be mounted on a pad. Furthermore, in the process for manufacturing the substrate 10, for each of the substrates 10 to be fabricated, the pads 16 and the openings of the solder resist layer 17 above the substrate body u (to expose the The position or size of the opening portion of the bump forming region 16A varies. On the other hand, the conductive ball mounting holes 26A provided on the conductive ball mounting masks 26 are formed almost in the design position. Fig. 8 is a view for explaining the problem of the solder bump forming method of the related art. > Therefore, in the related art solder bump forming method, by using the conductive ball mounting mask 26 to mount the conductive balls 97102081 200908180 28 on the pads 16, As shown, there is the following problem: the relative misalignment of the ball-forming device and the bump forming region 16A and the formation of the pad 16 of the upper conductive ball 28. As the pad 16 or the guide table 28 is finely increased, the problem is more worthy of note. Further, the related art solder bump forming method has the following problem: Since the conductive ball is used to mount the mask 26, the manufacturing cost of the substrate is increased. SUMMARY OF THE INVENTION An exemplary embodiment of the present invention provides a solder bump forming method capable of reducing cost and reliably mounting a conductive ball on each pad. The present invention relates to a solder bump forming method for performing a reflow process on a conductive ball mounted on a plurality of soldering techniques to form a solder bump. The method includes: a metal film forming step of forming a metal film capable of chemically reacting with a tackifying compound (tackifying c〇mp〇und) on the pads; an organic adhesive layer forming step of: a solution containing the adhesive compound and the a metal film chemical reaction to form an organic adhesive layer on the metal film; and a conductive ball mounting step of supplying the conductive ball to the organic adhesive layer, thereby mounting the conductive ball through the organic adhesive layer and the metal film These pads are on. According to the present invention, the metal crucible capable of chemically reacting with the adhesive compound is formed on the solder paste, and then the adhesive compound is chemically reacted with the metal film to form the organic adhesive layer on the metal film. As a result, in the case where the portion of the metal film to be formed on the metal film & has a small area, it is allowed to form an adhesive layer of 97127081 10 200908180 having almost the same thickness on the metal film. Therefore, when the conductive ball is mounted on the pads, the organic adhesive layer and the metal film can be reliably mounted on each of the pads of the pads without using the phase technique. Install the required conductive ball on the cover. In addition, since the conductive ball mounting mask is not required, it is allowed to reduce the manufacturing cost of the structure in which the pads are formed.
十此外’該膠黏化合物可含有萘三咕（卿細⑷ 何生物、苯并三唑（benz〇triaz〇le)衍生物、咪唑 (inndaZ〇le)衍生物、苯并w(be_imid咖⑷衍生 物W基苯并嗟嗤（mercapt〇benz〇thi㈣⑷街生物及苯 并嗟唾硫基脂肪酸（benzothiaz〇iethi〇 fatty心）衍生 物中之至少-者。藉由使用該膠黏化合物，可允許形成一 用以暫時固^該導電球於該金屬膜上之有機黏著層。 再者，該金屬膜可以使用銅膜或鎳膜。結果，可允許促 使該金屬膜與該膠黏化合物化學反應。In addition, the adhesive compound may contain naphthalene triterpenoids (4), benz〇triaz〇le derivatives, inndaZ〇le derivatives, benzoh (be_imid coffee (4) derivatives a substance of at least one of a mercapt 〇benz 〇 四 四 四 四 四 mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer mer An organic adhesive layer for temporarily fixing the conductive ball on the metal film. Further, the metal film may be a copper film or a nickel film. As a result, the metal film may be allowed to chemically react with the adhesive compound.
此外’當使用鎳膜做為該金屬膜時，亦可允許在該金屬 二形成步驟與該有機黏著層形成步驟間提供一用以形成 =層於邊金屬膜上之金層形成步驟及—用以在該有機 々者層形成步驟前立即移除該金層之金層移除步驟。因 ^在使用易於氧化之錄膜做為該金屬膜之情況中，可允 糟由形成該金層於該金屬膜上以防止該鎳膜之氧化。 診m該導電球安裝步驟中，亦可允許在上面形成有 該箄之&塾上方分配該等導電球，及擺動或搖動 精以在該等焊墊之每一焊墊上安裝一個導電 表。'、、。果’可允許安裝—導電球於該等焊塾之每-焊墊上。 97127081 11 200908180 再者’亦可允許提供一 -防擴散膜於該等谭墊上之防在二金屬膜形成步驟前形成 .Μ ^ 上之防擴散膜形成步驟；》π丄 金屬膜於該防擴散臈上。因此， ，形成該 等焊墊上，可允，在#胃由形成该防擴散膜於該 在該等焊做為該等焊塾之材料時，防止 3之銅擴散至焊料凸塊中。 此外’該防擴散膜可以由以電鑛 金膜中之至少—者所構 、把膜及 中所含之銅擴散至焊料:塊;果’可她止在該等焊塾 依據本發明，使在該料切形成之金屬難生化學反 :’：以形成用以暫時固定該導電球之有機黏著層。因 可允井準確地配置該精細導電球，而不使用該 ^裝罩幕。因此’可允許降低製造成本，並可靠地安裝i 導電球於該等焊墊之每一焊墊上。 攸下面詳細敘述、所附圖式及申請專利範圍可以明顯 知其它特徵及優點。 Ο 【實施方式】 接下來，將參考圖式以描述依據本發明之一具體例。 (第一具體例） 圖9係顯示依據本發明之第一具體例的一基板 圖。 參考圖9，依據該具體例之一基板1〇〇具有一基板本體 101、-貫穿電極102、複數個悍塾1〇3及1〇7、防焊層 104及108、防擴散膜1〇5及1〇9、一金屬膜ιη及一焊 料凸塊112。在該具體例中，下面將採用一做為半導體封 97127081 12 200908180 裝之佈線板當做該基板1 〇〇之實例來描述。 »亥基板本體101採取平板狀及具有複數通孔丨15。該貫 穿電極102係提供於該等通孔115中。該貫穿電極1〇2之 下端連接至該焊墊103及該貫穿電極1〇2之上端連接至該 丈干墊107。該貫穿電極〗〇2用以電性連接該焊墊丨〇3至該 焊墊107。對於該貫穿電極102而言，可允許使用一以例 如電鑛法所形成之鑛銅膜。 該等焊墊103係提供於該基板本體1〇1之下表面i〇ia 的對應於該貫穿電極1〇2之下端所形成之位置的部分 j及等；!：于墊1〇3採用在平面上觀看為圓形之形狀及具有 一上面要形成該防擴散膜1〇5之連接部117。該連接部/、ιΐ7 例如經由該防擴散冑1G5而電性連接至—像母板之安裝 基板（未顯示）。該連接部117㈣在平面上觀看為圓形之 形狀。對於該等燁墊1〇3而言，可允許使用一例如經圖案 等匕墊103之厚度可設定為例如15,該 ' 、Ρ β又疋為具有例如ΚΟμιη之直徑Ri。在此情 曰執連接117可设定為具有例如8()μΐη之直徑R2。 =塾1〇3及該連接部117之平面形狀並非侷限於該具體 該焊墊103及該連接部117之平面形狀可以 5又疋為例如矩形、多邊形或其它形狀。 該:二，係提供於該基板本體101之下表面㈣ ^ 乂覆盍该等焊塾103之除了該連接部 =二層104具有一用以暴露該連接部二 11 ^ Α的開口部118。 97127081 13 200908180 該防擴散膜1〇5係提供用以覆 118的部分上。對於該防擴散骐二= 了土較用-具有在該連接邹117之表面u j 豐合之鎳層及金層的鎳/金積層膜 广 之表面117A上所依序疊人之❹ 有在錢接117 ^ ^ σ之鎳層、鈀層及金層的鎳/鈀/ 2層膜、-具有在該連接部m之表面⑽上所依序 二H層及金層的鈀’金積層臈及一在該連接部117之 表面117Α上所形成之金声。办丨 '層膜做為該防擴散膜‘情=，=該綠/金積 一辟so, 閒况中’以無電鍍法連續疊合 ，層（例如，3_或更大之厚度广一益巴層（例如，〇 _ 以之/广一金層(例如，〇·01"0之厚 度），以形成該鎳/鈀/金積層膜。 該等烊墊107係提供於該基板本體 二應於該貫穿電請之上端所形成二= 上=焊塾1〇7採用在平面上觀看為圓形之形狀及具有 要形成該防擴散膜⑽之連接部121。該連接部ΐ2ι 及該金屬膜U1電性連接至該焊料凸 連接部121㈣在平面上觀看為圓形之形狀。 膜墊1〇7而言，可允許使用一例如經圖案化之銅 …專坏墊107之厚度可設定為例如 =塊m之導電球具有9_之直徑的情況= :〇7可设疋成具有例如120_之直徑R3。此外，在 此情^中，該連接部121可設^成具有例如叫m之直徑 "谭塾107及該連接㉝121之平面形狀並非揭限於該 97127081 14 200908180 具體例令之形狀。該焊墊1〇7及該連接部121之平面形狀 可以設定為例如矩形、多邊形或其它形狀。 /In addition, when a nickel film is used as the metal film, a step of forming a gold layer for forming a layer on the side metal film may be allowed between the metal forming step and the step of forming the organic adhesive layer. The gold layer removal step of removing the gold layer immediately before the organic layer formation step. In the case where a recording film which is easily oxidized is used as the metal film, it is possible to prevent the oxidation of the nickel film by forming the gold layer on the metal film. In the conductive ball mounting step, the conductive balls may be allowed to be distributed on the upper surface of the conductive layer, and the conductive balls may be oscillated or shaken to mount a conductive meter on each of the pads. ',,. The fruit can be mounted - a conductive ball on each of the pads of the solder pads. 97127081 11 200908180 Furthermore, it is also possible to provide a diffusion-proof film on the tan pads to prevent the formation of a diffusion-proof film on the 金属 ^ before the formation of the two metal film; π 丄 metal film in the diffusion prevention臈上. Therefore, on the pads, it is possible to prevent the copper of 3 from diffusing into the solder bumps when the anti-diffusion film is formed in the stomach to prevent the solder from being used as the material of the solder bumps. In addition, the anti-diffusion film may be constructed by at least one of the electro-gold gold films, and diffuse the copper contained in the film and the solder to the solder: a block; the fruit may be sealed in the solder according to the present invention. The metal formed by cutting the material is chemically resistant: ': to form an organic adhesive layer for temporarily fixing the conductive ball. Because the well can accurately configure the fine conductive ball without using the mask. Therefore, it is allowed to reduce the manufacturing cost and reliably mount the i conductive ball on each of the pads of the pads. Other features and advantages will be apparent from the following detailed description, appended claims and claims. [Embodiment] Next, a specific example according to the present invention will be described with reference to the drawings. (First Specific Example) Fig. 9 is a view showing a substrate according to a first specific example of the present invention. Referring to FIG. 9, a substrate 1A according to the specific example has a substrate body 101, a through electrode 102, a plurality of 悍塾1〇3 and 1〇7, solder resist layers 104 and 108, and an anti-diffusion film 1〇5. And a metal film ιη and a solder bump 112. In this specific example, a wiring board as a semiconductor package 97127081 12 200908180 will be described below as an example of the substrate 1 . The base substrate 101 has a flat shape and has a plurality of through holes 丨15. The through electrodes 102 are provided in the through holes 115. The lower end of the through electrode 1〇2 is connected to the pad 103 and the upper end of the through electrode 1〇2 is connected to the stem 107. The through electrode 〇 2 is used to electrically connect the pad 3 to the pad 107. For the through electrode 102, a mineral copper film formed by, for example, an electric ore method can be used. The pads 103 are provided on a portion j of the lower surface i〇ia of the substrate body 1〇1 corresponding to the position formed by the lower end of the through electrode 1〇2, and the like; The shape of the circle is viewed in a plane and has a connecting portion 117 on which the diffusion preventing film 1〇5 is to be formed. The connection portion /, ι 7 is electrically connected to, for example, a mounting substrate (not shown) of the mother board via the diffusion prevention 胄 1G5. The connecting portion 117 (four) is viewed in a circular shape in plan view. For the mattresses 1, 3, for example, a thickness of the pad 103 such as a pattern may be allowed to be set to, for example, 15, which is further a diameter Ri having, for example, ΚΟμιη. In this case, the connection 117 can be set to have a diameter R2 of, for example, 8 () μΐη. The planar shape of the connecting portion 117 and the connecting portion 117 are not limited to the specific one. The planar shape of the bonding pad 103 and the connecting portion 117 may be, for example, rectangular, polygonal or the like. The second surface is provided on the lower surface (4) of the substrate body 101. In addition to the connection portion of the soldering pad 103, the second layer 104 has an opening portion 118 for exposing the connecting portion. 97127081 13 200908180 The diffusion barrier film 1〇5 is provided on the portion for covering 118. For the anti-diffusion 骐 = = = = = = = = = = = = = = = = = = = = = = = 具有 = 具有 具有 具有 具有 具有 具有 具有 具有 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 117 a nickel/palladium/two-layer film of 117^^σ nickel layer, palladium layer and gold layer, palladium-gold layer having a sequence of two H layers and a gold layer on the surface (10) of the joint portion m A golden sound formed on the surface 117 of the connecting portion 117. Do not use the film as the anti-diffusion film. ===The green/gold product is a so-called, in the vacancy, 'continuously superimposed by electroless plating, the layer (for example, 3_ or greater thickness) a layer of yaba (for example, 〇 _ _ _ _ _ _ _ 01 thickness of 0) to form the nickel / palladium / gold laminated film. The pad 107 is provided on the substrate body two At the upper end of the through-hole, the second=up=weld 塾1〇7 is formed in a circular shape in plan view and has a connecting portion 121 to form the diffusion preventing film (10). The connecting portion ΐ2ι and the metal The film U1 is electrically connected to the solder bump connection portion 121 (4) and has a circular shape as viewed in a plane. For the film pad 1 〇 7, a thickness of, for example, patterned copper can be used, and the thickness of the special pad 107 can be set to For example, the case where the conductive ball of the block m has a diameter of 9 mm = : 〇 7 may be set to have a diameter R3 of, for example, 120_. Further, in this case, the connecting portion 121 may be provided with, for example, m The shape of the diameter " Tan 塾 107 and the connection 33121 is not limited to the shape of the specific 97127081 14 200908180. The pad 1〇7 The planar shape of the connecting portion 121 may be set, for example, rectangular, polygonal or other shape. /
該防焊層ι〇8係提供於該基板本體ιοί之上表面101B 上，以覆蓋該等焊墊1〇7之除了該連接部121之外的其它 部分。該防焊層1〇8具有一用以暴露在該焊墊1〇7中之該 連接部121的表面U1A之開口部122。該開口部122採 用圓形形狀。該開口部122可設定成具有上面只可安裝一 導電球之直徑。在做為該焊料凸塊Π2之導電球具有9〇μιη 之直徑的情況中，該開口部122可設定成具有例如8〇_ 之直徑。該開口部122之形狀並非侷限於該具體例中之形 狀。該開口部122之平面形狀可以設定為矩形、多邊形或 其它形狀。 該防擴散膜109係提供用以覆蓋該連接部121之暴露於 該開口部122的表面121Α。該防擴散膜109用以防止一 構成該焊墊107之金屬成分擴散至該焊料凸塊112中及提 咼该焊料與該焊墊1〇7之接合特性。該防擴散膜1〇9對於 該等金屬膜111及151具有小的厚度及在該導電球之回流 中完全被擴散至該焊料中之情況係特別有效的。 對於該防擴散膜1 〇 9而言，例如，可允許使用一具有在 該連接部121之暴露於該開口部122的表面121Α上所依 序疊合之鎳層及金層的鎳/金積層膜、一具有在該連接部 121之表面121Α上所依序疊合之鎳層、鈀層及金層的鎳/ 鈀/金積層膜、一具有在該連接部121之表面121Α上所依 序疊合之把層及金層的把/金積層膜及一在該連接部121 97127081 15 200908180 之表面121A上所形成之金層。例如，在使用該鎳/鈀/金 積層膜做為該防擴散膜⑽之情況中，以無錢法連續疊 合一鎳層（例如，3μιη或更大之厚度）、一把層（例如，〇1叫 或更小之厚度)及一金層(例如，〇〇ι叩至0.5叩之厚 度）’以形成該鎳/鈀/金積層膜。 名金屬膜111係提供用以覆蓋該防擴散膜1〇9之相對於 與該焊墊1G7接觸之表面的表面。該金祕U1可對一膠 黏化合物產生化學反應’其中該膠黏化合物含有萘三唾 (naphthotriazole)^^^ > ^ ^ (benzotriazole) 何生物、咪唑（iraidaz〇le)衍生物、苯并咪唑 (benZ〇imidazole)衍生物、巯基苯并噻唑 (㈣卿心则加㈣⑷衍生物及苯并㈣硫基脂肪酸 (enzothiaz〇lethio fatty acid)衍生物中之至少—者。 該金屬膜111用以形成一用以暫時固導電球（該導電 球藉由對該導電球實施回流處理而變成該焊料凸塊⑴ 至該金屬膜m之有機黏著層，此將在下面以與一 膠黏化合物之溶液反應來描述。 對於該金屬膜⑴而言，可允許使用例如銅膜或錦膜。 在使用銅膜做為該金屬膜⑴之情況中，該銅膜之厚产可 …。，例如，可藉由電鑛法形:該 擴112係提供於該金屬膜ηι之㈣於與該防 /、09接觸之表面的表面上。該焊料凸塊112電性 至像半導體晶片之電子零件（未顯示）。 97127081 16 200908180 $於具有上述結構（該基板之焊墊的結構）之基板ι〇〇 而δ，可允許使用例如一佈線板、一像晶片尺 裝或一半導體晶片。 巧之封 參考依據該具體例之基板100，採用在該防擴散膜ι〇9 上所提供之金屬膜ιη具有大的厚度之情況（例如，該厚 度等於或大於G.5_。當形成該焊料凸塊112肖，只使該 金屬膜111之一部分擴散至該焊料中的情況 ； f 描述。在該金屬膜⑴具有小的厚度（例如，厚度2 〇.5μη〇之情況甲，使該整個金屬膜lu在下面所要描述之 圖19所示之步驟中之該導電球129的回流處理中擴散至 1嬋料中。因此，在形成該焊料凸塊112後，該金 111沒有留下來。 換句話說，如下面所要描述之圖10所示，覆 膜⑽之金屬膜⑴沒有出現在—為完成構件之基板 123 上。 ?圖1G係顯示依據本發明之第—具體例的變型之一基板 HI!且=1〇中’相同於依據第一具體例之基謂 中的零件具有相同元件符號。 參考圖10,除了使依據第一具體例之基板1〇〇中所提 供之整個金屬膜⑴擴散至該焊料凸塊112中之外，依據 具體例之變型的基板ί23具有相同於該基板⑽之結 構。 圖η至㈣顯示依據本發明之第一具體例 塊形成製程之視圖。在圖12至2〇中，相同於依據第一具 97127081 17 200908180 體例之基板10 0的零件具有相同元件符號。 參考圖11至20,將採用製造依據第一具體例之基板1〇〇 的情況做為實W來㈣依據該具體例之焊料凸塊形成方 法0 首先，在圖11所示之舟稱< 由 + α , 驟中，在一具有内部要形成該 土板100之複數個基板形成區域A的基底材料125上以一The solder resist layer 8 is provided on the upper surface 101B of the substrate body ιοί to cover other portions of the pads 1〇7 except the connection portion 121. The solder resist layer 1A has an opening portion 122 for exposing the surface U1A of the connecting portion 121 in the pad 1?. The opening portion 122 has a circular shape. The opening portion 122 can be set to have a diameter on which only one conductive ball can be mounted. In the case where the conductive ball of the solder bump 2 has a diameter of 9 μm, the opening portion 122 may be set to have a diameter of, for example, 8 〇. The shape of the opening portion 122 is not limited to the shape in this specific example. The planar shape of the opening portion 122 can be set to a rectangular shape, a polygonal shape or the like. The diffusion preventing film 109 is provided to cover the surface 121 of the connecting portion 121 exposed to the opening portion 122. The diffusion preventing film 109 serves to prevent a metal component constituting the bonding pad 107 from being diffused into the solder bump 112 and to improve bonding characteristics of the solder and the bonding pad 1?. The diffusion preventive film 1〇9 is particularly effective for the metal films 111 and 151 having a small thickness and being completely diffused into the solder in the reflow of the conductive balls. For the diffusion prevention film 1 〇 9, for example, a nickel/gold layer having a nickel layer and a gold layer which are sequentially laminated on the surface 121 of the connection portion 121 exposed to the opening portion 122 can be used. a film, a nickel/palladium/gold laminated film having a nickel layer, a palladium layer and a gold layer laminated on the surface 121 of the connecting portion 121, one having a surface 121 on the surface of the connecting portion 121 A stacked/gold laminated film of the laminated layer and the gold layer and a gold layer formed on the surface 121A of the connecting portion 121 97127081 15 200908180. For example, in the case of using the nickel/palladium/gold laminated film as the diffusion preventive film (10), a nickel layer (for example, a thickness of 3 μm or more), a layer (for example, A thickness of 〇1 or less) and a gold layer (for example, 〇〇ι叩 to a thickness of 0.5 Å) are formed to form the nickel/palladium/gold laminated film. The metal film 111 is provided to cover the surface of the diffusion preventive film 1 to 9 with respect to the surface in contact with the pad 1G7. The gold secret U1 can chemically react with an adhesive compound, wherein the adhesive compound contains naphthotriazole ^^^ > ^ ^ (benzotriazole) Ho, imidazole (iraidaz〇le) derivative, benzo a benzimidazole derivative, a mercaptobenzothiazole ((4) ingxin plus (4) (4) derivative and at least one of a benzothiazyl lethio fatty acid derivative. The metal film 111 is used for Forming a temporary conductive conductive ball (the conductive ball becomes an organic adhesive layer of the solder bump (1) to the metal film m by performing a reflow process on the conductive ball, which will be followed by a solution with an adhesive compound For the metal film (1), for example, a copper film or a gold film can be used. In the case where a copper film is used as the metal film (1), the copper film can be produced in a large amount. For example, By the method of electro-minening: the extension 112 is provided on the surface of the metal film ηι (4) on the surface in contact with the anti-/, 09. The solder bump 112 is electrically connected to an electronic component such as a semiconductor wafer (not shown). 97127081 16 200908180 $With The substrate ι and δ of the above structure (the structure of the pad of the substrate) may allow, for example, a wiring board, an image chip package or a semiconductor wafer to be used. The package is referred to the substrate 100 according to the specific example. The metal film ιη provided on the diffusion preventing film ι 9 has a large thickness (for example, the thickness is equal to or greater than G.5 _. When the solder bump 112 is formed, only a part of the metal film 111 is formed The case of diffusion into the solder; f Description. In the case where the metal film (1) has a small thickness (for example, a thickness of 2 〇.5 μη〇, the entire metal film lu is shown in the step shown in Fig. 19 to be described below. The conductive ball 129 is diffused into the 1st material during the reflow process. Therefore, after the solder bump 112 is formed, the gold 111 is not left. In other words, as shown in FIG. 10 to be described below, The metal film (1) of the film (10) does not appear on the substrate 123 which is the finished member. Fig. 1G shows a substrate HI! in accordance with a variation of the first embodiment of the present invention and is the same as the first specific Part of the base The same component symbol is attached. Referring to FIG. 10, the substrate ί23 according to the modification of the specific example has the same except that the entire metal film (1) provided in the substrate 1A according to the first specific example is diffused into the solder bump 112. The structure of the substrate (10). Figures η to (4) show a view of the forming process of the first specific example according to the present invention. In Figs. 12 to 2, the same parts as the substrate 10 0 according to the first embodiment 9711 027 81 17 200908180 Referring to FIGS. 11 to 20, the case of manufacturing the substrate 1 according to the first specific example will be used as the actual W. (4) The solder bump forming method according to the specific example 0 First, as shown in FIG. The boat is said to be < by + α , in a step on a base material 125 having a plurality of substrate forming regions A on which the soil plate 100 is to be formed.
已知方法形成-通孔115、一貫穿電極1〇2及複數個焊墊 103及1〇7 ’然後在该基底材料125之一表面上形成 一具有-用以暴露-連接部117之__表面mA的開口部 118之防焊層104及在該基底材料125之一表面ΐ25β上 (在該表面125A之相對側上）形成一具有一用以暴露一連 接部121之一表面121A的開口部122之防焊層1〇8。 在切副位置B上切割該基底材料12 5，以便獲得複數 個基板本體101。對於該基底材料125而言，可允許使用 例如矽基板或環氧玻璃基板。以例如電鍍法形成該貫穿電 極102、具有該連接部117之焊墊1〇3及具有該連接部i2i 之焊墊107。對於該貫穿電極1〇2及該等焊墊丨〇3及 而吕’可允許使用例如銅膜。該等焊墊j 〇3及丨〇7可設定 成具有例如15μιη之厚度。該等烊墊1〇3之直徑R1可設定 為例如120μιη。在此情況中，該連接部117可設定成具有 例如80μιη之直徑R2。此外，在下面所要描述之圖丨6所 不之步驟中所使用之一導電球129具有9〇μιη之直徑的情 況中，該等焊墊1〇7之直徑R3可設定為例如12〇㈣。在 此情況中，該連接部121之直徑R4可設定為例如8〇μιη。 97127081 18 200908180 該開口部118係以它的直徑幾乎等於該連接部ιΐ7之直徑 R2的方式所形成。再者，該開口部122係例如以它的直 徑幾乎等於該連接部121之直徑R4的方式所形成。The method is known to form a via 115, a through electrode 1〇2, and a plurality of pads 103 and 1'7' and then form a surface on the surface of the substrate material 125 to expose the connection portion 117. The solder resist layer 104 of the opening portion 118 of the surface mA and the surface ΐ 25β of one of the base materials 125 (on the opposite side of the surface 125A) are formed with an opening portion for exposing a surface 121A of a connecting portion 121. 122 solder resist layer 1〇8. The base material 12 5 is cut at the dicing position B to obtain a plurality of substrate bodies 101. For the base material 125, for example, a tantalum substrate or a glass epoxy substrate can be used. The penetrating electrode 102, the pad 1?3 having the connecting portion 117, and the pad 107 having the connecting portion i2i are formed by, for example, electroplating. For example, a copper film can be used for the through electrode 1〇2 and the pads 3 and ′. The pads j 〇 3 and 丨〇 7 may be set to have a thickness of, for example, 15 μm. The diameter R1 of the mattress 1〇3 can be set to, for example, 120 μm. In this case, the connecting portion 117 can be set to have a diameter R2 of, for example, 80 μm. Further, in the case where one of the conductive balls 129 used in the step of Fig. 6 to be described below has a diameter of 9 〇 μηη, the diameter R3 of the pads 1 〇 7 can be set to, for example, 12 〇 (4). In this case, the diameter R4 of the connecting portion 121 can be set to, for example, 8 〇 μηη. 97127081 18 200908180 The opening portion 118 is formed in such a manner that its diameter is almost equal to the diameter R2 of the connecting portion ι7. Further, the opening portion 122 is formed, for example, such that its diameter is almost equal to the diameter R4 of the connecting portion 121.
Ik後，在圖12所不之步驟中，使該等連接部丨17及121 經歷-清洗處理與—活化處理，然後以電鑛法在該連接部 117之表面117A上形成一防擴散臈1〇5，以及在該連接部 表面121A上形成一防擴散膜1 〇 9 ( 一防擴散膜形成 步驟）。該清洗及活化處理包㈣如—用㈣等連接部ιΐ7 及121之表面11以及12u之脫脂處理、一用於已經歷該 脫脂處理之連接部117及121的表面U7A& 12u之蝕刻 處理、一用於已經歷該蝕刻處理之連接部117及丨2丨的表 面117A及121A之酸洗處理以及用於已經歷該酸洗處理之 連接部117及121的表面117A及121A之該活化處理。 對於該等防擴散膜105及1〇9而言，例如，可允許使用 一具有依序疊合之鎳層及金層的鎳/金積層膜、一具有依 序疊合之鎳層、鈀層及金層的鎳/鈀/金積層膜、一具有依 序豐合之鈀層及金層的鈀/金積層膜及一金層。例如，在 使用該鎳/鈀/金積層膜做為該等防擴散膜1〇5及1〇9之情 况中，以無電鐘法連續疊合一鎳層（例如，3 或更大之 厚度）、一鈀層（例如，〇. 1μιη或更小之厚度）及一金層（例 如，0. Οίμιη至0. 5μιη之厚度），以形成該鎳/鈀/金積層膜。 隨後，在圖13所示之步驟中，以電鍍法形成一能與一 膠黏化合物化學反應之金屬膜m，以覆蓋該防擴散膜 109之暴露至該開口部122的表面（金屬膜形成步驟），其 97127081 19 200908180 中鄉黏化合物含有蔡三唾衍生物、苯并三 咪唾衍生物，基苯并售唾衍生物及苯并 叁主&基脂肪酸衍生物中之至少一者。 开 丄對:能與該膠黏化合物化學反應之該金屬膜⑴而 銅膜或鎳膜。該金屬膜111可例如以 膜可执定=右 銅膜做為該金屬膜之情況中，該銅 彳少做為該金屬膜m之銅膜的厚度 鈀化合物對電氣特性所產生之。 … 物：：：：在圖14所示之步驟中’二含有該膠黏化合 1U化學反應，以形成-有機黏著層 &蓋该金屬膜111之暴露至該開口部122的π ::4_著層形成步驟)。更特別地，藉由將圖u所; 1 構：入一含0·05至2〇重量百分比之萘三峻衍生物、 、=二=何生物、咪嗤衍生物、苯并啼唾衍生物、疏基苯 ::何生物及苯并噻唑硫基脂肪酸衍生物中之至少一 口:塗抹該溶液至該金屬膜111之暴露於該開 描=二，有機黏著層127。在下面所要 固定-導電她 有機黏著層127用以暫時 厚度可設定為例如金屬膜111。該有機黏著層127之 因^在該等焊墊107上形成能與該膠黏化合物化學反 屬:11，然後使含有該膠黏化合物之溶液與該金 屬膜111彼此化學反應’以在該金屬们U之暴露至該開 97127081 20 200908180 金屬膜⑴之上面：开1 層127。因此，亦在該 面積的情況中 該有機黏著層127的表面具有小 同厚产之有’可允許在該金屬膜⑴上形成具有幾乎相 機黏著層127。結果，當在該等焊塾107上安 膜ill在該等焊墊： 不使用在相關姑敲士 裝該等個別導電球，而 心 ^中所需之導電球安裝罩幕26(見圖4及 降㈣成有：ί要該導電球安裝罩幕26’結果，可允許 降=成有㈣焊料凸塊m之基板⑽的製造成本。 1- 下至Ώ 14在圖15所不之步驟中，以可使複數個導電球落 圖14所不之結構的形成有該有機黏著層m之側的 '將圖14所不之結構固定至—導電球供應裝置⑽ 之平台131上。該導電球供應裝置130係具有該平a ⑶、-用以擺動該平台131之擺動裝置i32、一用以： 由該擺動裝請支樓該平纟131之支撐物133以及一： 置在該平纟131上方及用以使該等導電球129(見圖⑹ 落在該平#⑶上所固定之結構的導電球容器 構。 刃、、'口 然後’在圖16所示之步驟中，使該等導電球129從該 平台131上方所配置之導電球容器134落下及使包括該等 焊墊107之結構擺動（使該平台131擺動），以將該等導電 球129中之一安裝在形成有該金屬膜ηι及該有機黏著層 127之每一焊墊107上（導電球安裝步驟）。 對於該導電球129而言，可允許使用例如一由錫—銀— 97127081 21 200908180 銅合金所構成之焊球或-由錫—銀合金所構成之輝球。此 外，該導電球129之直徑係設定為例如8〇叩至9〇叩。 之後’在圖17所示之步驟中，在停止該等導電球129 洛下之狀態中擺動在該平台131上所固定之結構。因此， 從該防焊層108移除或收集沒有安裝在該金屬膜⑴ 過多導電球129。 接下來，如圖18所示之步驟中，從該平台⑶ 面安裝有圖17所示之導電球129的結構。 示 隨後’在圖19所示之步驟中’使圖18所示之導電球 口机處理’以在每一金屬臈1U上形成-焊料 凸塊。結果，在該基底材料125中所提供之複數個基 成區域A中形成-對應於該基板1GG之結構。在圖 19所示之步驟中，該有機黏篓爲 ^匀機黏者層在該回流處理中揮 發了。 實施在® 19料之步財之該”電球129的回流處 理而不使用助熔劑。 /瓜處 因此，藉由實施該等導電球129之回流處 熔劑，在該導電球129之回流處理 : 驟因此，可簡化用!：製=驟^使^有機溶劑之清洗步 可允許降低該基板刚之製刚n結果， /匕外，因為不使用助炫劑，所以不需要在相關技蓺中所 品之回流爐中執行一週期性清洗工作。 ^ 再者，因為不使用助饺杰,^ ^ μ，所以在該焊料凸塊丨丨2之表 97127081 22 200908180 面或s亥基板100之表面上不會產生助炼劑之殘餘物。因 此，可允許防止該焊料凸塊112及該焊墊107因助熔劑而 腐钮。結果’可允許提高該基板1〇〇及一在該基板丨〇〇上 所安裝之半導體晶片的電性連接可靠性及在該半導體晶 片與該基板1 〇 〇間之電性連接可靠性。 如以上所述’在圖1 9所示之步驟中，在該防擴散膜1 〇9 上所提供之金屬膜111具有大的厚度（該厚度例如等於或 大於0.5μηι)之情況中’該金屬膜U1如圖19所示留在該 防擴散膜109上。然而，在該金屬臈ιη具有小的厚度（該 厚度例如小於0. 5μηι)之情況中，因為在該導電球12g之 回流處理令使該整個金屬膜1U擴散至該焊料，所以在形 成該焊料凸塊u 2後，沒有留下該金屬膜111。After Ik, in the steps of FIG. 12, the connecting portions 17 and 121 are subjected to a cleaning treatment and an activation treatment, and then an anti-diffusion crucible is formed on the surface 117A of the connecting portion 117 by electro-mineralization. 〇5, and an anti-diffusion film 1 〇9 (an anti-diffusion film forming step) is formed on the surface 121A of the joint portion. The cleaning and activation treatment package (4) is a degreasing treatment of the surfaces 11 and 12u of the joint portions ι 7 and 121 such as (4), and an etching treatment for the surface U7A & 12u of the joint portions 117 and 121 which have undergone the degreasing treatment. The pickling treatment for the surfaces 117A and 121A of the joint portions 117 and 已2丨 which have undergone the etching treatment and the activation treatment for the surfaces 117A and 121A of the joint portions 117 and 121 which have been subjected to the pickling treatment. For the anti-diffusion films 105 and 1 , for example, a nickel/gold laminated film having a nickel layer and a gold layer which are sequentially laminated, a nickel layer having a sequential lamination, and a palladium layer may be used. And a nickel/palladium/gold laminated film of a gold layer, a palladium/gold laminated film having a palladium layer and a gold layer in sequence, and a gold layer. For example, in the case where the nickel/palladium/gold laminated film is used as the diffusion preventive films 1〇5 and 1〇9, a nickel layer (for example, a thickness of 3 or more) is continuously laminated by an electric clockless method. And a palladium layer (for example, a thickness of 1 μm or less) and a gold layer (for example, a thickness of 0.1 μm μm to 0.5 μm) to form the nickel/palladium/gold laminated film. Subsequently, in the step shown in FIG. 13, a metal film m capable of chemically reacting with an adhesive compound is formed by electroplating to cover the surface of the diffusion preventive film 109 exposed to the opening portion 122 (metal film forming step) ), 97127081 19 200908180 The Zhongxiang mucium compound contains at least one of a C. sinensis derivative, a benzotrisin derivative, a phenyl benzoate derivative, and a benzoindole main & fatty acid derivative. A pair of metal films (1) capable of chemically reacting with the adhesive compound and a copper film or a nickel film. The metal film 111 can be formed, for example, in the case where the film can be set as the right copper film as the metal film, and the copper ruthenium is used as the thickness of the copper film of the metal film m. ...:::: In the step shown in FIG. 14, 'two contains the adhesive 1U chemical reaction to form - the organic adhesive layer & covers the π:4 of the metal film 111 exposed to the opening portion 122 _ layer formation step). More specifically, by the structure of Figure u: 1 into a 0. 05 to 2% by weight of naphthalene three-thirty derivatives, = = = Ho, Nimium derivatives, benzopyrene derivatives , sulfhydryl benzene: at least one of the organism and the benzothiazole thio fatty acid derivative: the solution is applied to the metal film 111 to be exposed to the opening = 2, the organic adhesive layer 127. The organic adhesive layer 127 for fixing-conducting the organic adhesive layer 127 for temporary thickness can be set to, for example, the metal film 111. The organic adhesive layer 127 is formed on the pads 107 to be chemically reacted with the adhesive compound: 11, and then the solution containing the adhesive compound and the metal film 111 are chemically reacted with each other 'in the metal We are exposed to the opening of the 97127081 20 200908180 metal film (1): open 1 layer 127. Therefore, also in the case of this area, the surface of the organic adhesive layer 127 has a small thickness and is allowed to form an almost-adhesive adhesive layer 127 on the metal film (1). As a result, when the pads are mounted on the pads 107, the pads are not used: the individual conductive balls are not used in the relevant pads, and the conductive balls are required to mount the mask 26 (see FIG. 4). And the lower (four) is: ί requires the conductive ball to mount the mask 26', which can be allowed to fall down to the manufacturing cost of the substrate (10) having the (four) solder bumps m. 1- Down to Ώ 14 in the steps of Figure 15 , the structure of the organic adhesive layer m is formed by fixing a plurality of conductive balls to the side of the organic adhesive layer m. The structure of FIG. 14 is fixed to the platform 131 of the conductive ball supply device (10). The supply device 130 has the flat a (3), a swinging device i32 for swinging the platform 131, and a device 133 for: arranging the support 133 of the flat 131 by the swing and placing: The upper and the conductive ball container structure for making the conductive balls 129 (see Fig. (6) fall on the structure fixed on the flat #(3). The blade, the 'mouth then' in the step shown in Fig. 16 The conductive ball 129 falls from the conductive ball container 134 disposed above the platform 131 and swings the structure including the pads 107 (so that the flat 131 oscillating), one of the conductive balls 129 is mounted on each of the pads 107 on which the metal film ηι and the organic adhesive layer 127 are formed (conductive ball mounting step). For the conductive ball 129, For example, a solder ball composed of a tin-silver-97127081 21 200908180 copper alloy or a phosphor ball composed of a tin-silver alloy may be used. Further, the diameter of the conductive ball 129 is set to, for example, 8 〇叩 to 9 Then, in the step shown in Fig. 17, the structure fixed on the stage 131 is swung in a state in which the conductive balls 129 are stopped. Therefore, the solder resist layer 108 is removed or collected. The conductive film 129 is mounted on the metal film (1). Next, in the step shown in Fig. 18, the structure of the conductive ball 129 shown in Fig. 17 is mounted from the surface of the stage (3). In the step, 'the conductive ball machine shown in FIG. 18 is processed' to form a solder bump on each metal iridium 1U. As a result, a plurality of base-forming regions A are provided in the base material 125 - corresponding to The structure of the substrate 1GG. The steps shown in FIG. The organic binder is volatilized in the reflow treatment. The reflow treatment of the "ball 129" is carried out without the use of a flux. The reflowing agent of the conductive balls 129 is reflowed at the conductive balls 129. Therefore, it can be simplified. The cleaning step of the organic solvent can be allowed to reduce the result of the substrate. /Besides, since the lubricant is not used, it is not necessary to perform a periodic cleaning work in the reflow furnace of the related art. ^ Furthermore, since the helper is not used, ^^μ, so Solder bump 丨丨 2 Table 97127081 22 200908180 No residue of the refining agent is produced on the surface of the surface or s-substrate 100. Therefore, it is allowed to prevent the solder bumps 112 and the pads 107 from being ruined by the flux. As a result, it is possible to improve the electrical connection reliability of the substrate 1 and a semiconductor wafer mounted on the substrate and the electrical connection reliability between the semiconductor wafer and the substrate 1 . As described above, in the step shown in FIG. 19, in the case where the metal film 111 provided on the diffusion preventive film 1 〇 9 has a large thickness (the thickness is, for example, equal to or greater than 0.5 μm), the metal The film U1 remains on the diffusion preventive film 109 as shown in FIG. However, in the case where the metal 臈ιη has a small thickness (the thickness is, for example, less than 0.5 μm), since the entire metal film 1U is diffused to the solder by the reflow treatment of the conductive ball 12g, the solder is formed. After the bump u 2 , the metal film 111 is not left.
Ik後，在圖20所示之步驟中，沿著該切割位置B切割 圖19所示之結構。結果，製造得複數個基板1〇〇。 △依據該具體例之凸塊形成方法，在該等焊墊107上形成 能與該膠黏化合物化學反應之金屬膜m，然後，使含有 該膠黏化合物之溶液與該金屬膜ln彼此化學反應，以在 該：屬膜m之暴露至該開口部122的部分上形成該有機 黏著層127。因此’亦在該金屬冑111之上面要形成該有 機黏著層127的表面具有小面積的情況中，可允許在該 屬膜111上形成具有幾乎相同厚度之有機黏著I 1打:名士 果’當在料焊塾1G7上絲該等導電球129時，可; 著層127及該金加1丨在每-焊㈣： 女裝個導電球129，而不使用在相關技藝中所需 97127081 23 200908180 之導電球安裝罩幕26(見圖4)。此外，不需要該導電球安 裝罩幕26，結果，可允許降低形成有該等焊料凸塊112 之基板100的製造成本。 圖21至23係顯示依據本發明之第一具體例的變型之一 焊料凸塊形成製程的視圖。在圖21至23中，相同於上述 圖11至20所示之結構的零件具有相同元件符號。 參考圖21至23’將採用製造依據第一具體例之基板1〇〇 的情況做為實例來描述依據該具體例之變型的一焊料凸 〇塊形成方法。 首先，實施相同於上述圖11至18所示之步驟的處理， 以形成圖18所示之結構。接下來，在圖21所示之步驟中， 使-導電球129中所包含之焊料炫化一半，以使該導電球 129經由一金屬膜ill暫時固定至一焊塾1〇7。 因此，使該導電球129中所包含之焊料熔化一半，以使 該導電球129經由該金屬膜111暫時固定至該焊墊1〇7。 (因此，在下面所要描述之圖22所示之步驟中，當形成一 助熔劑147,以覆蓋該導電球129時，可允許防二該導電 球129從該焊墊107滑動。 人 接下來’在圖22所示之步驟中’形成該助熔劑I"， 以覆蓋在圖21所示之結構的導電球129所暫時固定之側 ;上的表面及該導電球129。該助熔劑147係藉由例如一塗 佈製程所形成。 土 然後，在圖23所示之步驟中，使該導電球129經歷一 回流處理，以形成一焊料凸塊112。在此時，大部分$助 97127081 24 200908180 23所示之步驟後所獲 所示之結構中所提供 少谷劑14 7揮發了。因此，在處理圖 才于之助溶劑14 7的厚度小於在圖2 2 之助熔劑147的厚度。 所不之步驟中的助熔劑 之步驟中的處理，以製造 之後’經由清洗移除在圖2 3 147。隨後’實施上述圖2〇所示 得複數個基板100。 依據該具體例之變型的凸塊形成方法， 129實施該回流以形成該焊料 ' 十該*電球 1/17 π a 4 \ 尾U Z時’使用該助熔劑 =7,可切b維持該焊料凸幻12與該焊塾m 5曰強度及該焊料之可驗。最好㈣構成該導電球⑵之 焊料的成分以決定是$ # i 凸塊形成方法。使用依㈣具體例之變型的焊料 此外，在使該導電球129簡單地接人 12 7之狀能f fi 1 δ α ° 有機黏者層 广之狀“圖18所示之狀態)中塗抹該助炫劑的情況 中，該助熔劑使該有機黏著層J = ，從該焊請滑動。基於此理由，最好如二= 將《亥導電球129熔化—半及暫時固定。 此外，在如圖1 9所千给说丁曰士， 茸此_、.以斤包具有熔劑之回流步驟的 下。在此情況中/ 有完全揮發而是部分留 、逆由該助熔剤完全移除該# 127,導致以第一罝獅, 抄味忍有搣黏者層 之接合強度 例之㈣的適當應用而提供該焊料 (第二具體例） 圖2 4係顯示依播士代ηα 據本發明之弟二具體例的一基板之剖面 97127081 25 200908180 圖。在圖24中’相同於依據第一具體例之基板i〇〇的零 件具有相同元件符號。 參考圖24 ’除了提供一金屬膜151以取代在依據第一After Ik, in the step shown in Fig. 20, the structure shown in Fig. 19 is cut along the cutting position B. As a result, a plurality of substrates were fabricated. According to the bump forming method of the specific example, a metal film m capable of chemically reacting with the adhesive compound is formed on the pads 107, and then the solution containing the adhesive compound and the metal film ln are chemically reacted with each other. The organic adhesive layer 127 is formed on the portion of the film m which is exposed to the opening portion 122. Therefore, in the case where the surface of the metal crucible 111 to be formed has a small area on the metal crucible 111, it is allowed to form an organic adhesion having almost the same thickness on the genus film 111: When the conductive balls 129 are wired on the soldering boring 1G7, the layer 127 and the gold are added in each soldering (four): a conductive ball 129 for women, without the need for related art 97172081 23 200908180 The conductive ball mounts the mask 26 (see Figure 4). Furthermore, the conductive ball mounting mask 26 is not required, and as a result, the manufacturing cost of the substrate 100 on which the solder bumps 112 are formed can be reduced. 21 to 23 are views showing a solder bump forming process according to a modification of the first specific example of the present invention. In Figs. 21 to 23, parts identical to those shown in Figs. 11 to 20 described above have the same component symbols. A solder bump forming method according to a modification of this specific example will be described with reference to Figs. 21 to 23' taking the case of manufacturing the substrate 1A according to the first specific example as an example. First, the processing similar to the steps shown in Figs. 11 to 18 described above is carried out to form the structure shown in Fig. 18. Next, in the step shown in Fig. 21, the solder contained in the -conductive ball 129 is half-baked so that the conductive ball 129 is temporarily fixed to a solder bump 1 through a metal film ill. Therefore, the solder contained in the conductive ball 129 is melted by half so that the conductive ball 129 is temporarily fixed to the pad 1?7 via the metal film 111. (Thus, in the step shown in Fig. 22 to be described below, when a flux 147 is formed to cover the conductive ball 129, the conductive ball 129 can be prevented from sliding from the pad 107. In the step shown in Fig. 22, 'the flux I" is formed to cover the temporarily fixed side of the conductive ball 129 of the structure shown in Fig. 21; the upper surface and the conductive ball 129. The flux 147 is used by For example, a coating process is formed. Soil Then, in the step shown in Fig. 23, the conductive ball 129 is subjected to a reflow process to form a solder bump 112. At this time, most of the $97127081 24 200908180 23 The less granules 14 7 provided in the structure shown after the steps shown are volatilized. Therefore, the thickness of the co-solvent 14 7 in the process is less than the thickness of the flux 147 in Fig. 2 . The processing in the step of fluxing in the step, after manufacturing, is removed by cleaning in FIG. 2 147. Subsequently, the plurality of substrates 100 shown in the above FIG. 2A are implemented. The bumps according to the modification of the specific example Forming method, 129 performing the reflow to form the Material '10%* electric ball 1/17 π a 4 \ tail UZ' use this flux=7, can cut b to maintain the solder bump 12 and the soldering m 5 曰 strength and the solder is verifiable. (4) The composition of the solder constituting the conductive ball (2) is determined to be a bump formation method of the $# i. The solder according to the modification of the specific example (4) is used, and the conductive ball 129 is simply connected to the shape of the fif 1 In the case where the assisting agent is applied to the δ α ° organic adhesive layer in the state shown in Fig. 18, the flux causes the organic adhesive layer J = to slide from the weld. For this reason, the most As good as two = will be "Hai conductive ball 129 melting - half and temporarily fixed. In addition, as shown in Figure 19, the thousand said that Ding Shishi, velvet this _,. with the bag has a reflow step of the flux. Here In case / there is complete volatilization but partial retention, the complete removal of the # 127 by the fluxing crucible, resulting in the appropriate application of the joint strength of the first lion lion, the smear of the smear layer (4) The solder (second specific example) Fig. 24 shows a section of a substrate according to a specific example of the second embodiment of the present invention, 97102081 25 200 908180. In Fig. 24, the parts identical to the substrate i 依据 according to the first specific example have the same component symbols. Referring to Fig. 24', in addition to providing a metal film 151 instead of the first
具體例之基板100中所提供之防擴散膜109及金屬膜1U 之外’依據第：具體例之—基板15Q具有相同於該基板 100之結構。 r 該金屬膜151係提供用以覆蓋在與該基板本體1〇丨之上 表面101B接觸之表面的相對侧上的一連接部ΐ2ι的表面 121A。該金屬m 151可與在第一具體例中所述之膠黏化合 物化學反應。該金屬膜151用以與一含有在第一具體例中 所述之膠黏化合物的溶液化學反應，藉以形成一用以暫時 固定-導電球⑵至該金屬冑151之有機黏著層。對於該 金屬膜151而言’可允許使用例如由電鑛法所成之錄膜。 在使用該鎳膜做為該金屬膜151之情況中，該金屬膜 之厚度可設定為例如等於或大於(例如，3_至 像晶片尺寸封裝之封 2於具有上述結構（該基板之焊墊的結構）之基板15〇 而言，可允許使用例如一佈線板、 裝或一半導體晶片。 參考依據該具體例之基板15〇，採用在該連接部a】上 所提供之金屬m 151具有大的厚度之情況（例如，該厚产 等於或大於0.5_。當形成一焊料凸塊112時，口 屬膜151之-部分擴散至一焊料中的情況）做為㈣= 述。在該金屬膜151具有小的厚度(例如，該、： 〇·5μιη)之情況中，當實施該導電球129之一 、 W •處理，以 97127081 26 200908180 形成該焊料凸塊11 2時，佶兮赴v 料中。基於此理由，在形成=個金屬膜151擴散至該焊 ⑸沒有留下來。換句話說料凸塊112後’該金屬膜 示，該金屬膜151沒有出現在如A下面所要描述之目25所 θ -為完成構件之基板180上。 圖2 5係顯不依據本發明 _ 之第二具體例的變型之一基板 的剖面圖。在圖25中，相同& 丞板 , 相冋於依據第二具體例之基板15〇 的零件具有相同元件符號。 參考圖25，除了使在依撼楚 ^ ^ β 據弟二具體例之基板150中所 提供之整個金屬膜151擴| $兮,曰上， 颁政至该焊料凸塊112之外，依攄 第二具體例之變型的一基柘】8η目士丄 u # I板I80具有相同於該基板150之 結構。 圖26至30係顯示依據本發明之第二具體例的—焊料凸 塊形成製程之視圖。在圖26至3〇中，相同於依據第二具 體例之基板150的零件具有相同元件符號。 首先，在圖26所示之步驟中，實施相同於第一具體例 中所述之圖11及12所示之步驟的處理，以形成圖所 示之結構。隨後’在圖27所示之步驟中，以電鍍法形成 一能與一膠黏化合物化學反應之金屬膜丨5丨，以覆苗一連 接部121之暴露至一開口部122的表面12ια(金屬二形成 步驟），其中該膠黏化合物含有萘三唑衍生物、苯并二唑 衍生物、咪唑衍生物、苯并咪唑衍生物、巯基笨并噻:衍 生物及本弁β塞β坐硫基脂肪酸衍生物.中之至少一 百。對於能 與該膠黏化合物化學反應之金屬膜151而言，可允許使用 例如鎳膜。在使用鎳膜做為該金屬膜151之情況中， 97127081 27 200908180 屬膜151可設定成具有例如等於或大於3μιη之厚度（例 如，3μπι 至 8μιη)。 此外，可以使該金屬膜151與一防擴散膜1〇5同時形 成。例如，該防擴散膜1〇5係由一鎳/鈀/金積層膜所構 :成，在一表面117Α上形成該鎳層之同時，在該表面12U 上形成一鎳層（鎳膜），以及然後，以電鍍法藉由使用該表 面121Α做為一罩幕在該表面U7A上連續形成一鈀層及一 金屬，以便同時形成該防擴散膜1〇5及該金屬151。 (接了來，在® 28所不之步驟中，使一含有該膠黏化合 物之溶液與該金屬膜151化學反應，以形成一有機黏著層 155，以便覆蓋該金屬膜151之暴露至該開口部的部 分（有機黏著層形成步驟）。更特別地，藉由將圖”所^ 之結構浸人-含G.G5至2G重量百分比之萘三㈣生物、 苯并三唾衍生物、咪唾衍生物、苯并味唾衍生物、魏基苯 开嗟哇衍生物及苯并嗟唾硫基脂肪酸衍生物中之至少一 者的浴液中，或録該溶液至該金屬膜ΐ5ι之暴露於該開 口部122的部分’以形成該有機黏著層155。在下面所要 描狀圖29所示之步驟中，該有機黏著層155用以暫時 ，導電球129。該有機黏著層丨55之厚度可設定為例 因此，在等焊塾1 〇7卜# t 上形成此與該膠黏化合物化學反應 之金屬膜1 51，鈇後传合古分棚 ’ '、 ，、、 有該膠黏化合物之溶液與該金屬 膜151彼此化學反應，以在 ^ 199 V L 隹该金屬膜151之暴露至該開口 的#刀上形成該有機黏著層155。因此，亦在該金 97127081 28 200908180 屬膜151之上面要形成兮古μ 4 # ^ 〜有機黏者層155的表面具有小面 積的情況中’可允許在該金屬 -_ 食屬膜151上形成具有幾乎相同 厚度之有機黏著層155。社里 ^ . 、、告果，當在該等焊墊1〇7上安裝 導電球129時’可允許經由 1C1丄— 田5亥有機黏者層155及該金屬膜 151在母一焊墊107上可靠地安裝一個導電球129，而不 使用在相關技藝中所需之導電球安裝罩幕％(見圖4及 δ) °此外’不需要該導電球安裝罩幕26，結果，可允許 降低形成有複數個焊料凸塊112之基板15〇的製造成本。 隨後’纟圖29所示之步驟中’使該等導電球129從一 =電球供應裝置130之-平台131上方所配置之—導電球 容器134落下及使包括該等焊塾m之結構擺動（使該平 台131擺動），以在形成有該金屬膜151及該有機黏著層 155之每一焊墊1〇7上安裝一個導電球129(導電球安裝步 驟）。 然後，實施相同於第一具體例中所描述之圖丨7至2〇所 示之步驟的處理，以便如圖30所示製造得複數個基板 150。 依據該具體例之凸塊形成方法，在該等焊塾1 〇 7上形成 能與該膠黏化合物化學反應之該金屬膜15丨，然後使含有 该膠黏化合物之溶液與該金屬膜151彼此化學反應，以在 該金屬膜151之暴露至該開口部122的部分上形成該有機 黏著層155。因此，亦在該金屬膜151之上面要形成該有 機黏著層15 5的表面具有小面積的情況中，可允許在該金 屬膜151上形成具有幾乎相同厚度之有機黏著層} 55。結 97127081 29 200908180 果，當在該等焊墊107上安裝該等導電球129時，可允許 經由該有機黏著層155及該金屬膜151在每一焊墊1〇7上 可靠地安裝一個導電球129，而不使用在相關技藝中所需 ‘电球女褒罩幕26(見圖4及8)。此外，不需要該導電 :球安裝罩幕26，結果，可允許降低形成有該等焊料凸塊 112之基板15〇的製造成本。 圖31及32係顯示依據本發明之第二具體例的變型之一 焊料凸塊形成製程的視圖。 參考圖31及32，將描述依據第二具體例之變型的一焊 料凸塊形成方法。首先，實施相同於上述圖26及27所示 之步驟的處理，以形成圖27所示之結構。 接下來，在圖31所示之步驟_，以電鍍法形成一金膜 161，以覆蓋一金屬膜151之暴露至一開口部122的表面。 因此，當使用一鎳膜做為該金屬膜151時，藉由形成該金 膜161，以覆蓋該金屬膜151之表面，可防止該易於氧化 之錦膜氧化。於是，在暫時剩下—内部形成有該金屬膜 151之結構（在該金屬膜151之形成後，沒有立即形成有 f黏著層155)的情況中，可有效形成該金膜161，以便覆 蓋金屬膜151(在此情況中為鎳膜）之表面。 * 然後，在圖32所示之步驟中，移除圖31所示之金膜 -161。之後，實施相同於上述圖28至30所示之步驟的處 理’以便製造得複數個基板15〇。 、雖然已詳細描述依據本發明之較佳具體例，但是本發明 並非侷限於該等特定具體例，而是在不脫離申請專利範圍 97127081 30 200908180 中所述之本發明的範圍内可實施各種變更及修改。 食,、、、:在第及第二具體例中採用使該導電球1 2 g落 ^安裝f該等有機黏著層m及155的情況做為實例來描 ^ t疋例如亦可允許藉由使用下面所要描述之圖33及 著声m或圖35及36所示之方法’在該等有機黏 曰以及155上安裝該導電球129。 圖用以說明另一導電球安震方法之視圖，及 6係用以說明另外一導電球安裝方 插：圖用33及34所示，亦可允許將圖“或以所示之結構 後拉出谷納該等導電球129之導電球容器⑺中，秋 入之結構’藉以接合該等導電球12" 等有機黏者層127及155。 此外如圖35及36所示，亦可基 該等導電球】29之平板173/圖上，安裝有 i 以接合該等導電球129至該等有機/著之結構’藉 而在其上安裝該等導電球129有执黏者層127及155’因 本發明可應用於-用以在一佈線板、一像 :封裝或-像半導體晶片之基板上所提供之曰焊“ ^裝-導電球，以形成—焊料凸塊之 【圖式簡單說明】 寸凸鬼形成方法。 圖1係顯示一相關技藝基板之剖面圖； 一)圖2係顯示一相關技藝焊料凸塊形成步驟之視圖(第 圖3係顯示該相關技藝悍料凸塊形成步驟之視圖（第 97127081 200908180In addition to the diffusion preventive film 109 and the metal film 1U provided in the substrate 100 of the specific example, the substrate 15Q has the same structure as the substrate 100 according to the specific example. r The metal film 151 is provided with a surface 121A for covering a joint portion 2 on the opposite side of the surface in contact with the upper surface 101B of the substrate body 1B. The metal m 151 can be chemically reacted with the adhesive compound described in the first specific example. The metal film 151 is for chemically reacting with a solution containing the adhesive compound described in the first embodiment to form an organic adhesive layer for temporarily fixing the conductive ball (2) to the metal crucible 151. For the metal film 151, it is allowed to use, for example, a recording film formed by an electric ore method. In the case where the nickel film is used as the metal film 151, the thickness of the metal film may be set to be equal to or greater than, for example, (for example, a package of the wafer size package having the above structure (the pad of the substrate) For the substrate 15A, for example, a wiring board, a package or a semiconductor wafer can be used. Referring to the substrate 15A according to the specific example, the metal m 151 provided on the connection portion a has a large The case of the thickness (for example, the thickness is equal to or greater than 0.5_. When a solder bump 112 is formed, a portion of the film 151 is diffused into a solder) as (4) = in the metal film In the case where 151 has a small thickness (for example, 、·5μιη), when one of the conductive balls 129 is implemented, W • processing is performed, and the solder bumps 11 2 are formed by 97127081 26 200908180, For this reason, the diffusion of the metal film 151 to the solder (5) is not left. In other words, after the bump 112, the metal film 151 does not appear as described below. 25 θ - is the substrate 18 of the completed member Fig. 2 is a cross-sectional view showing a substrate which is not a modification of the second specific example of the present invention. In Fig. 25, the same & 丞 plate corresponds to the substrate 15 according to the second specific example. The parts have the same component symbols. Referring to FIG. 25, in addition to the entire metal film 151 provided in the substrate 150 of the specific example of the second embodiment, the metal film 151 is expanded to the solder bump. In addition to the block 112, a substrate according to a modification of the second specific example has a structure similar to that of the substrate 150. Figures 26 to 30 show a second specific example according to the present invention. A view of the solder bump forming process. In Figs. 26 to 3, the parts identical to the substrate 150 according to the second specific example have the same component symbols. First, in the step shown in Fig. 26, the implementation is the same as the The processing of the steps shown in Figures 11 and 12 described in a specific example to form the structure shown in the figure. Subsequently, in the step shown in Figure 27, a chemical reaction with an adhesive compound is formed by electroplating. The metal film is 丨5丨, and the cover portion 121 is exposed to an opening portion 1 a surface 12α of 22 (a metal forming step), wherein the adhesive compound contains a naphthalene triazole derivative, a benzobisazole derivative, an imidazole derivative, a benzimidazole derivative, a mercapto thiazolidine derivative, and a bun At least one hundred of β-β-thio-fatty acid derivative. For the metal film 151 capable of chemically reacting with the adhesive compound, for example, a nickel film can be used. In the case of using a nickel film as the metal film 151 In the case, the film 151 of the film may be set to have a thickness equal to or greater than 3 μm (for example, 3 μm to 8 μm). Further, the metal film 151 can be formed simultaneously with a diffusion preventive film 1〇5. For example, the diffusion preventing film 1〇5 is formed of a nickel/palladium/gold laminated film: a nickel layer (nickel film) is formed on the surface 12U while forming the nickel layer on the surface 117Α, Then, a palladium layer and a metal are successively formed on the surface U7A by electroplating using the surface 121 as a mask to simultaneously form the diffusion preventive film 1〇5 and the metal 151. (Continuously, in the step of 28, a solution containing the adhesive compound is chemically reacted with the metal film 151 to form an organic adhesive layer 155 so as to cover the exposure of the metal film 151 to the opening. Part of the part (organic adhesion layer forming step). More specifically, by immersing the structure of the figure - containing G.G5 to 2G by weight of naphthalene three (four) organisms, benzotrisin derivatives, sodium saliva a bath of at least one of a derivative, a benzo-salt derivative, a weidibenzide derivative, and a benzopyrene fatty acid derivative, or a solution of the solution to the metal film ΐ5ι The portion of the opening portion 122 is formed to form the organic adhesive layer 155. In the step shown in FIG. 29, the organic adhesive layer 155 is used to temporarily and electrically conductive the ball 129. The thickness of the organic adhesive layer 丨55 can be Therefore, the metal film 1 51 which chemically reacts with the adhesive compound is formed on the equal-welding 塾1 〇7b#t, and the 分 传 古 古 ' ' ' , , , , , , , The solution and the metal film 151 are chemically reacted with each other to be in the 199 VL 隹The organic adhesive layer 155 is formed on the #刀 of the metal film 151 which is exposed to the opening. Therefore, the surface of the film 151 of the gold 97127081 28 200908180 is formed on the surface of the film 151. In the case of a small area, it is allowed to form an organic adhesive layer 155 having almost the same thickness on the metal film 151. In the case of the film, the conductive layer is mounted on the pads 1〇7. When the ball is 129', it is allowed to reliably mount a conductive ball 129 on the mother-pad 107 via the 1C1丄-田5海 organic adhesive layer 155 and the metal film 151 without using the conductive ball required in the related art. Mounting mask % (see Figures 4 and δ) ° In addition, the conductive ball mounting mask 26 is not required, and as a result, the manufacturing cost of the substrate 15 formed with the plurality of solder bumps 112 can be reduced. In the illustrated step, 'the conductive balls 129 are disposed from above the platform 131 of the electric ball supply device 130 - the conductive ball container 134 is dropped and the structure including the solder pads m is swung (the platform 131 is swung ), in the formation of the metal film 151 and the A conductive ball 129 (conductive ball mounting step) is mounted on each of the pads 1 to 7 of the adhesive layer 155. Then, a process similar to the steps shown in Figures 7 to 2 of the first embodiment is carried out, In order to fabricate a plurality of substrates 150 as shown in FIG. 30, according to the bump forming method of this specific example, the metal film 15丨 capable of chemically reacting with the adhesive compound is formed on the solder pads 1 〇7, and then The solution containing the adhesive compound and the metal film 151 are chemically reacted with each other to form the organic adhesive layer 155 on a portion of the metal film 151 exposed to the opening portion 122. Therefore, also in the case where the surface of the metal film 151 on which the organic adhesive layer 15 is to be formed has a small area, an organic adhesive layer 55 having almost the same thickness can be formed on the metal film 151.结97127281 29 200908180, when the conductive balls 129 are mounted on the pads 107, a conductive ball can be reliably mounted on each pad 1〇7 via the organic adhesive layer 155 and the metal film 151. 129, without the need for the 'battery ball girl curtain 26 (see Figures 4 and 8) in the relevant art. Furthermore, the conductive: ball mounting mask 26 is not required, and as a result, the manufacturing cost of the substrate 15A on which the solder bumps 112 are formed can be reduced. 31 and 32 are views showing a solder bump forming process according to a modification of the second specific example of the present invention. Referring to Figures 31 and 32, a solder bump forming method according to a modification of the second specific example will be described. First, the processing similar to the steps shown in Figs. 26 and 27 described above is carried out to form the structure shown in Fig. 27. Next, in the step _ shown in Fig. 31, a gold film 161 is formed by electroplating to cover the surface of a metal film 151 exposed to an opening portion 122. Therefore, when a nickel film is used as the metal film 151, by forming the gold film 161 to cover the surface of the metal film 151, the oxide film which is easily oxidized can be prevented from being oxidized. Then, in the case where the structure of the metal film 151 is formed temporarily (after the formation of the metal film 151, the f-adhesion layer 155 is not formed immediately), the gold film 161 can be effectively formed to cover the metal. The surface of the film 151 (in this case, a nickel film). * Then, in the step shown in Fig. 32, the gold film -161 shown in Fig. 31 is removed. Thereafter, the same process as the above-described steps shown in Figs. 28 to 30 is carried out to fabricate a plurality of substrates 15A. Although the preferred embodiment of the present invention has been described in detail, the present invention is not limited to the specific embodiments, and various modifications can be made without departing from the scope of the invention as described in the patent application scope of s. And modify. Food,,,,,, in the second and second specific examples, the case where the conductive balls 1 2 g are mounted to the organic adhesive layers m and 155 is taken as an example for example, and may be allowed to be The conductive balls 129 are mounted on the organic adhesives 155 and 155 using the method of FIG. 33 and the sound m or the methods shown in FIGS. 35 and 36 to be described below. The figure is used to illustrate the view of another conductive ball shocking method, and the 6 series is used to illustrate another conductive ball mounting square insert: the figures are shown by 33 and 34, and the drawing can be allowed to be pulled back or in the structure shown. In the conductive ball container (7) of the conductive balls 129, the structure of the autumn is 'by joining the conductive balls 12' and the organic adhesive layers 127 and 155. Further, as shown in FIGS. 35 and 36, On the plate 173/picture of the conductive ball 29, i is mounted to engage the conductive balls 129 to the organic/structures. The conductive balls 129 are mounted thereon with the adhesive layers 127 and 155. 'Because the present invention can be applied to - soldering a "mounting-conducting ball" provided on a wiring board, an image: a package or a substrate like a semiconductor wafer to form a solder bump [simple figure Description] Inch convex ghost formation method. 1 is a cross-sectional view showing a related art substrate; FIG. 2 is a view showing a related art solder bump forming step (Fig. 3 is a view showing the step of forming the related art bumps (97127081 200908180)
圖4係顯示該相關技藝焊料凸塊形成步驟之視圖（第 三）； 圖5係顯示該相關技藝焊料凸塊形成步驟之視圖（第 :四）； 圖6係顯示該相關技藝焊料凸塊形成步驟之視圖（第 五）； 圖7係顯示該相關技藝焊料凸塊形成步驟之視圖（第 P六）； 圖8係用以說明一相關技藝焊料凸塊形成方法之問題 的視圖； 圖9係顯示依據本發明之第一具體例的一基板之剖面 圖； 圖1 〇係顯示依據本發明之第一具體例的變型之一基板 的剖面圖； 圖11係顯不依據本發明之第一具體例的一焊料凸塊形 成步驟之視圖（第一）； 圖12係顯不依據本發明之第一具體例的焊料凸塊形成 步驟之視圖（第二）； 圖 系、u、'員不依據本發明之第-具體例的焊料凸塊形成 步驟之視圖（第三）； 牛顯：依據本發明之第一具體例的焊料凸塊形成 步驟之視圖（第四）； 圖15係顯示依據本發明之第—具體例的焊料凸塊形成 97127081 32 200908180 步驟之視圖（第五）； 圖16係顯示依據本發明之 步驟之視圖（第六）； ： 圖17係顯示依據本發明之μ ：步驟之視圖（第七）； 之第 ® 18係、顯示依據本發明 步驟之視圖（第八）； 之弟 圖19係顯示依據本發明 '步驟之視圖（第九）； 圖20係顯示依據本發明之第 步驟之視圖（第十）· 圖21係顯示依據本發明之第 凸塊形成步驟的視圖（第一）； 圖22係顯示依據本發明之第 塊形成步驟的視圖(第二）； U塊：二係顯示依據本發明之第 塊形成步驟的視圖(第三）； 圖24係顯示依據本發明之第 9 具體例的焊料凸塊形成 具體例的焊料凸塊形成 具體例的焊料凸塊形成 具體例的焊料凸塊形成 具體例的焊料凸塊形成 具體例的變型之一焊料 具體例的變型之焊料凸 具體例的變型之焊料凸 圖； 具體例的一基板之剖面 圖25係顯— 刘&闽.’、尔依據本發明之第二具體例的變型 的剖面圖； 之一基板 圖26係黑頁~ 成步驟之視依據本發明之第二具體例的一焊料凸塊形 圖（第—）； 圖27係裔頁 .不依據本發明之第二具體例的焊料凸塊形成 97127081 33 200908180 步驟之視圖（第二）； 二具體例的焊料凸塊形成 二具體例的焊料凸塊形成 一具體例的焊料凸塊形成 圖28係顯示依據本發明之第 步驟之視圖（第三）； 圖29係顯示依據本發明之第 步驟之視圖（第四）； 圖30係顯示依據本發明之第 步驟之視圖（第五）； 圖31係顯示依據本發明 $乃 < 第一具體例的變型之一焊料 凸塊形成步驟的視圖（第一）； 圖3 2係顯示依據本發明夕锋 个1*阳之弟二具體例的變型之焊料凸 塊形成步驟的視圖（第二）； 圖33係用以說明另一導電球安裝方法之視圖（第一）； 圖34係用以說明另一導電球安裝方法之視圖（第二）； 圖35係用以說明另外一導電球安裝方法之視圖（第 一）； 圖36係用以說明該另外一導電球安裝方法之視圖（第 二）；以及 圖37係用以說明一相關技藝焊料凸塊形成方法之問題 的視圖。 【主要元件符號說明】 基板 11 基板本體 HA 下表面 11B 上表面 97127081 u 200908180 f 1. 12 貫穿電極 13 焊墊 13A 連接部 14 防焊層 14A 開口部 16 焊墊 16A 凸塊形成區域 17 防焊層 17A 開口部 19 焊料凸塊 21 基底材料 23 助溶劑 23A 助熔劑形成罩幕 23B 開口部 24 導電球安裝裝置 25 平台 26 導電球安裝罩幕 26A 導電球安裝孔 28 導電球 100 基板 101 基板本體 101A 下表面 101B 上表面 102 貫穿電極 97127081 35 2009081804 is a view showing a related art solder bump forming step (third); FIG. 5 is a view showing the related art solder bump forming step (4:4); FIG. 6 is a view showing the related art solder bump formation. Figure 7 is a view showing a step of forming a solder bump of the related art (P6); Fig. 8 is a view for explaining a problem of a related art solder bump forming method; 1 is a cross-sectional view showing a substrate according to a first embodiment of the present invention; FIG. 1 is a cross-sectional view showing a substrate according to a modification of the first specific example of the present invention; and FIG. 11 is a first specific example not according to the present invention. A view of a solder bump forming step (first); FIG. 12 is a view showing a solder bump forming step (second) not according to the first specific example of the present invention; View of the solder bump forming step of the first embodiment of the present invention (third); Niu Xian: view of the solder bump forming step according to the first specific example of the present invention (fourth); FIG. 15 shows the basis The first invention - FIG. 17 is a view showing a step according to the present invention (sixth); FIG. 17 is a view showing a step according to the present invention: a view of a step (seventh) Fig. 18 shows a view of the steps according to the invention (eighth); FIG. 19 shows a view of the 'steps according to the invention (ninth); FIG. 20 shows a view of the first step according to the invention (Tenth) Fig. 21 is a view showing a first bump forming step (first) according to the present invention; Fig. 22 is a view showing a first block forming step according to the present invention (second); U block: two-line display View of the first block forming step according to the present invention (third); Fig. 24 is a view showing a solder bump forming specific example of the solder bump forming specific example of the solder bump forming according to the ninth embodiment of the present invention. A solder bump of a specific example is a solder bump of a specific example. A solder bump of a modified example of a solder bump of a specific example of a solder specific example; a cross-sectional view of a substrate of a specific example is shown in FIG. <闽.', a cross-sectional view of a modification of the second embodiment of the present invention; one of the substrates; FIG. 26 is a black sheet - a step of forming a solder bump pattern according to a second specific example of the present invention ( - 27; Figure 27 is a family page. Solder bump formation not according to the second embodiment of the present invention 97127081 33 200908180 Step view (second); two specific examples of solder bumps forming two specific examples of solder bumps FIG. 28 is a view showing a first step (third) according to the present invention; FIG. 29 is a view showing a first step (fourth) according to the present invention; and FIG. 30 is a view showing the present invention. View of the first step (fifth); FIG. 31 is a view showing a solder bump forming step (first) according to a modification of the first embodiment of the present invention; FIG. 3 is a view showing the eve according to the present invention. A view (second) of the solder bump forming step of the modification of the specific example of the first embodiment; FIG. 33 is a view for explaining another conductive ball mounting method (first); FIG. 34 is for explaining View of another conductive ball mounting method Figure 25 is a view for explaining another method of mounting a conductive ball (first); Figure 36 is a view for explaining the mounting method of the other conductive ball (second); and Figure 37 is for explaining A related art view of the problem of solder bump formation methods. [Major component symbol description] Substrate 11 Substrate body HA Lower surface 11B Upper surface 97127081 u 200908180 f 1. 12 Through electrode 13 Pad 13A Connection portion 14 Solder mask 14A Opening portion 16 Pad 16A Bump forming region 17 Solder mask 17A opening 19 solder bump 21 base material 23 co-solvent 23A flux forming mask 23B opening 24 conductive ball mounting device 25 platform 26 conductive ball mounting mask 26A conductive ball mounting hole 28 conductive ball 100 substrate 101 substrate body 101A Surface 101B upper surface 102 through electrode 97127081 35 200908180
103 焊墊 104 防焊層 105 防擴散膜 107 焊墊 108 防焊層 109 防擴散膜 111 金屬膜 112 焊料凸塊 115 通孔 117 連接部 117A 表面 118 開口部 121 連接部 121A 表面 122 開口部 123 基板 125 基底材料 125A 表面 125B 表面 127 有機黏著層 129 導電球 130 導電球供應裝置 131 平台 132 擺動裝置 97127081 36 200908180 133 支撐物 134 導電球容器 147 助溶劑 150 基板 151 金屬膜 155 有機黏著層 161 金膜 171 導電球容器 173 平板 180 基板 A 基板形成區域 B 切割位置 J 基板形成區域 K 切割位置 R1 直徑 R2 直徑 R3 直徑 R4 直徑 97127081 37103 pad 104 solder resist layer 105 anti-diffusion film 107 pad 108 solder resist layer 109 anti-diffusion film 111 metal film 112 solder bump 115 through hole 117 connecting portion 117A surface 118 opening portion 121 connecting portion 121A surface 122 opening portion 123 substrate 125 Substrate 125A Surface 125B Surface 127 Organic Adhesive Layer 129 Conductive Ball 130 Conductive Ball Supply Device 131 Platform 132 Swing Device 97127081 36 200908180 133 Support 134 Conductive Ball Container 147 Cosolvent 150 Substrate 151 Metal Film 155 Organic Adhesive Layer 161 Gold Film 171 Conductive Ball Container 173 Plate 180 Substrate A Substrate Forming Area B Cutting Position J Substrate Forming Area K Cutting Position R1 Diameter R2 Diameter R3 Diameter R4 Diameter 97127081 37
Claims (1)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007186020 | 2007-07-17 | ||
| JP2008125761A JP5297083B2 (en) | 2007-07-17 | 2008-05-13 | Solder bump formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200908180A true TW200908180A (en) | 2009-02-16 |
| TWI427720B TWI427720B (en) | 2014-02-21 |
Family
ID=40269039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097127081A TWI427720B (en) | 2007-07-17 | 2008-07-17 | Solder bump forming method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5297083B2 (en) |
| KR (1) | KR20090008146A (en) |
| CN (1) | CN101350323A (en) |
| TW (1) | TWI427720B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI409015B (en) * | 2011-01-25 | 2013-09-11 | ||
| TWI409014B (en) * | 2011-01-25 | 2013-09-11 | ||
| TWI464929B (en) * | 2011-03-16 | 2014-12-11 | Lextar Electronics Corp | Light source module with enhanced heat dissipation efficiency and embedded package structure thereof |
| TWI555452B (en) * | 2014-08-12 | 2016-10-21 | 南亞電路板股份有限公司 | Circuit board and method for forming the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101122140B1 (en) | 2010-05-11 | 2012-03-16 | 엘지이노텍 주식회사 | Printed circuit board with single-layer using bump structure and Manufacturing method of the same |
| CN108513433A (en) * | 2018-04-24 | 2018-09-07 | 苏州维信电子有限公司 | A kind of flexible circuit board PAD and its manufacturing method every tin |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3838672B2 (en) * | 1993-06-07 | 2006-10-25 | 昭和電工株式会社 | Method for forming solder circuit board |
| JPH11121495A (en) * | 1997-10-16 | 1999-04-30 | Ricoh Co Ltd | Semiconductor device manufacture |
| WO1999034654A1 (en) * | 1997-12-29 | 1999-07-08 | Ibiden Co., Ltd. | Multilayer printed wiring board |
| JP2001267731A (en) * | 2000-01-13 | 2001-09-28 | Hitachi Ltd | Method of manufacturing electronic part and the same fitted with bump |
| EP1601017A4 (en) * | 2003-02-26 | 2009-04-29 | Ibiden Co Ltd | Multilayer printed wiring board |
| JP4409990B2 (en) * | 2003-02-28 | 2010-02-03 | 昭和電工株式会社 | A method of manufacturing a solder circuit board. |
| JP2005117035A (en) * | 2003-09-19 | 2005-04-28 | Showa Denko Kk | Flip-chip gallium-nitride-based semiconductor light-emitting element and method of fabricating same |
| JP2007516602A (en) * | 2003-09-26 | 2007-06-21 | テッセラ，インコーポレイテッド | Manufacturing structure and method of a capped tip containing a flowable conductive medium |
| US7626829B2 (en) * | 2004-10-27 | 2009-12-01 | Ibiden Co., Ltd. | Multilayer printed wiring board and manufacturing method of the multilayer printed wiring board |
-
2008
- 2008-05-13 JP JP2008125761A patent/JP5297083B2/en active Active
- 2008-07-16 KR KR1020080068999A patent/KR20090008146A/en not_active Application Discontinuation
- 2008-07-17 CN CNA2008101307670A patent/CN101350323A/en active Pending
- 2008-07-17 TW TW097127081A patent/TWI427720B/en active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI409015B (en) * | 2011-01-25 | 2013-09-11 | ||
| TWI409014B (en) * | 2011-01-25 | 2013-09-11 | ||
| TWI464929B (en) * | 2011-03-16 | 2014-12-11 | Lextar Electronics Corp | Light source module with enhanced heat dissipation efficiency and embedded package structure thereof |
| TWI555452B (en) * | 2014-08-12 | 2016-10-21 | 南亞電路板股份有限公司 | Circuit board and method for forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090008146A (en) | 2009-01-21 |
| CN101350323A (en) | 2009-01-21 |
| JP5297083B2 (en) | 2013-09-25 |
| JP2009044128A (en) | 2009-02-26 |
| TWI427720B (en) | 2014-02-21 |
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