TWI464929B - Light source module with enhanced heat dissipation efficiency and embedded package structure thereof - Google Patents

Light source module with enhanced heat dissipation efficiency and embedded package structure thereof Download PDF

Info

Publication number
TWI464929B
TWI464929B TW100109023A TW100109023A TWI464929B TW I464929 B TWI464929 B TW I464929B TW 100109023 A TW100109023 A TW 100109023A TW 100109023 A TW100109023 A TW 100109023A TW I464929 B TWI464929 B TW I464929B
Authority
TW
Taiwan
Prior art keywords
lead frame
light
layer
source module
light source
Prior art date
Application number
TW100109023A
Other languages
Chinese (zh)
Other versions
TW201240168A (en
Inventor
cheng yi Liu
Original Assignee
Lextar Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lextar Electronics Corp filed Critical Lextar Electronics Corp
Priority to TW100109023A priority Critical patent/TWI464929B/en
Priority to CN2011101027934A priority patent/CN102683545A/en
Publication of TW201240168A publication Critical patent/TW201240168A/en
Application granted granted Critical
Publication of TWI464929B publication Critical patent/TWI464929B/en

Links

Landscapes

  • Led Device Packages (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

提昇散熱效率之光源模組及其嵌入式封裝結構Light source module for improving heat dissipation efficiency and embedded package structure thereof

本發明是有關於一種光源模組,且特別是有關於一種提昇散熱效率之光源模組及其嵌入式封裝結構。The invention relates to a light source module, and in particular to a light source module for improving heat dissipation efficiency and an embedded package structure thereof.

一般而言,發光元件之底部係以散熱片來導熱,但是發光元件所產生的熱必須經過電路基板上的錫膏、絕緣膠(例如PP膠)以及背膠,才能到達散熱片。這三層材料中,絕緣膠的熱阻最大,應設法盡量減少絕緣膠的使用。但是,在熱電分離的封裝結構中,傳統上還是以導熱不導電的絕緣膠來電性隔離發光元件與散熱片,因此傳統的熱電分離的封裝結構仍無法解決散熱不佳的問題。另外,組裝在散熱片上的封裝結構,常會發生組裝人員的手指觸碰到封裝膠體,使其表面受力而造成內部的金線發生斷裂或損壞,因此應設法避免封裝結構在組裝時被觸碰到的機會。Generally, the bottom of the light-emitting element is thermally insulated by a heat sink, but the heat generated by the light-emitting element must pass through a solder paste, an insulating glue (such as PP glue), and a backing on the circuit substrate to reach the heat sink. Among the three layers of materials, the thermal resistance of the insulating rubber is the largest, and efforts should be made to minimize the use of the insulating adhesive. However, in the thermoelectric separation package structure, the light-emitting and non-conductive insulating glue is conventionally used to electrically isolate the light-emitting element from the heat sink. Therefore, the conventional thermoelectric separation package structure cannot solve the problem of poor heat dissipation. In addition, the package structure assembled on the heat sink often causes the assembler's finger to touch the encapsulant, causing the surface to be stressed and causing the internal gold wire to be broken or damaged. Therefore, the package structure should be avoided to be touched during assembly. The opportunity to arrive.

本發明係有關於一種提昇散熱效率之光源模組及其嵌入式封裝結構,可將發光元件所產生的熱直接傳導至下方的散熱片,以減少熱阻。此外,嵌入式封裝結構可內埋於散熱片的凹槽中,進而有效減少封裝結構在組裝時被觸碰到的機會。The invention relates to a light source module for improving heat dissipation efficiency and an embedded package structure thereof, which can directly transmit heat generated by a light-emitting element to a heat sink below to reduce thermal resistance. In addition, the embedded package structure can be embedded in the recess of the heat sink, thereby effectively reducing the chance of the package structure being touched during assembly.

根據本發明之一方面,提出一種提昇散熱效率之光源模組。此光源模組包括一發光元件、一電路層、一導線架、一導熱材料層以及一散熱片。導線架電性連接於發光元件與電路層之間。導熱材料層連接於導線架的底部,且導熱材料層與導線架電性絕緣。散熱片具有一凹槽,用以容納發光元件與導線架,其中導熱材料層位於凹槽的底部,以使散熱片藉由導熱材料層與導線架的底部熱接觸。According to an aspect of the invention, a light source module for improving heat dissipation efficiency is proposed. The light source module comprises a light emitting component, a circuit layer, a lead frame, a heat conductive material layer and a heat sink. The lead frame is electrically connected between the light emitting element and the circuit layer. The layer of thermally conductive material is attached to the bottom of the leadframe and the layer of thermally conductive material is electrically insulated from the leadframe. The heat sink has a recess for receiving the light emitting element and the lead frame, wherein the heat conductive material layer is located at the bottom of the groove such that the heat sink is in thermal contact with the bottom of the lead frame by the layer of heat conductive material.

根據本發明之另一方面,提出一種嵌入式封裝結構,配置於一凹槽中,凹槽的外側設有一接墊。嵌入式封裝結構包括一發光元件、一導線架以及一封膠。導線架電性連接於發光元件。凹槽用以容納發光元件與導線架,導線架上端延伸至凹槽的外側,並與接墊電性連接。封膠包覆發光元件以及部分導線架,其中導線架下端延伸至封膠內,並與發光元件電性連接。According to another aspect of the present invention, an embedded package structure is provided, which is disposed in a recess, and a pad is disposed on an outer side of the recess. The embedded package structure includes a light emitting component, a lead frame, and a glue. The lead frame is electrically connected to the light emitting element. The recess is configured to receive the light emitting component and the lead frame, and the upper end of the lead frame extends to the outside of the recess and is electrically connected to the pad. The sealant covers the light-emitting component and a part of the lead frame, wherein the lower end of the lead frame extends into the sealant and is electrically connected to the light-emitting element.

為了對本發明之上述及其他方面有更佳的瞭解,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下:In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:

本實施例之提昇散熱效率之光源模組及其嵌入式封裝結構,係於散熱片(例如鋁板)上加工以形成一口字形的凹槽,並在此凹槽的下表面做表面處理,以形成一導熱材料層於凹槽中。藉由導熱材料層,發光元件所產生的熱可以直接傳導至散熱片,不需經過絕緣層,以減少熱阻的產生。此外,嵌入式封裝結構係採用向上彎折之導線架,使得導線架可內埋於散熱片的凹槽中,並可藉由上錫焊接而電性連接於發光元件與電路層之間。因此,嵌入式封裝結構可受到適當的保護,以減少在組裝時被觸碰到的機會。The light source module for improving heat dissipation efficiency of the embodiment and the embedded package structure thereof are processed on a heat sink (for example, an aluminum plate) to form a groove-shaped groove, and surface treatment is performed on the lower surface of the groove to form A layer of thermally conductive material is in the recess. With the layer of thermally conductive material, the heat generated by the illuminating element can be directly conducted to the heat sink without passing through the insulating layer to reduce the generation of thermal resistance. In addition, the embedded package structure adopts an upwardly bent lead frame, so that the lead frame can be buried in the groove of the heat sink and can be electrically connected between the light emitting element and the circuit layer by soldering. Therefore, the embedded package structure can be appropriately protected to reduce the chance of being touched during assembly.

請參照第1A~1E圖,其繪示依照一實施例之光源模組的散熱片之加工流程示意圖。加工流程包括下列步驟(1)~(4)。在第1A圖中,步驟(1)係形成一電路層112以及一絕緣層114於散熱片116的上表面。絕緣層114位於電路層112與散熱片116之間,以電性隔離電路層112與散熱片116。在第1B圖中,步驟(2)係以機械加工或蝕刻等方式移除部分絕緣層114以及部分散熱片116而形成一凹槽116a。電路層112的接墊112a、112b係位於凹槽116a的外側。在第1C圖中,步驟(3)係形成一金屬層118(例如銅或鎳)於凹槽116a的底部。在第1D圖中,步驟(4)係形成一導熱材料層120於金屬層118上,而部分導熱材料層122係可形成於電路層112的接墊112a、112b上。在一實施例中,導熱材料層120例如以塗佈的方式形成於凹槽116a的底部。導熱材料層120的材質包括錫,例如是低熔點的錫鉛合金或錫銀銅合金等。此外,當導熱材料層120以網版塗佈在凹槽116a的底部時,部分導熱材料層122可同時塗佈於接墊112a、112b上,以作為一焊接材料層。另外,當散熱片116的材質為鋁時,由於銅(金屬層118)與錫(導熱材料層120)的接合能力大於鋁(散熱片116)與錫(導熱材料層120)的接合能力,因此本實施例可藉由銅(金屬層118)接合於導熱材料層120與散熱片116之間,來增加散熱片116與導熱材料層120的接合能力。Please refer to FIGS. 1A-1E for a schematic diagram of a processing flow of a heat sink of a light source module according to an embodiment. The processing flow includes the following steps (1) to (4). In FIG. 1A, step (1) forms a circuit layer 112 and an insulating layer 114 on the upper surface of the heat sink 116. The insulating layer 114 is located between the circuit layer 112 and the heat sink 116 to electrically isolate the circuit layer 112 from the heat sink 116. In FIG. 1B, step (2) removes a portion of the insulating layer 114 and a portion of the fins 116 by machining or etching to form a recess 116a. The pads 112a, 112b of the circuit layer 112 are located outside of the recess 116a. In Fig. 1C, step (3) forms a metal layer 118 (e.g., copper or nickel) at the bottom of the recess 116a. In FIG. 1D, step (4) forms a layer of thermally conductive material 120 on metal layer 118, and a portion of thermally conductive material layer 122 is formed on pads 112a, 112b of circuit layer 112. In an embodiment, the layer of thermally conductive material 120 is formed, for example, in a coating manner at the bottom of the recess 116a. The material of the heat conductive material layer 120 includes tin, for example, a low-melting tin-lead alloy or a tin-silver-copper alloy. In addition, when the heat conductive material layer 120 is coated on the bottom of the groove 116a with a screen, a portion of the heat conductive material layer 122 may be simultaneously coated on the pads 112a, 112b as a solder material layer. In addition, when the material of the heat sink 116 is aluminum, since the bonding ability of the copper (metal layer 118) and the tin (heat conductive material layer 120) is greater than the bonding ability of the aluminum (the heat sink 116) and the tin (the heat conductive material layer 120), This embodiment can increase the bonding ability of the heat sink 116 and the heat conductive material layer 120 by bonding copper (metal layer 118) between the heat conductive material layer 120 and the heat sink 116.

另外,請參考第1E圖,上述之加工流程中,於步驟(4)之後,更可包括塗佈一防銲層124於絕緣層114上。防銲層124覆蓋絕緣層114,並顯露出位於接墊112a、112b上的部分導熱材料層122(焊接材料層)以及位於凹槽116a的底部的導熱材料層120,如第2A圖所示。In addition, referring to FIG. 1E, in the above processing flow, after the step (4), a solder resist layer 124 may be further coated on the insulating layer 114. The solder resist layer 124 covers the insulating layer 114 and exposes a portion of the thermally conductive material layer 122 (a layer of solder material) on the pads 112a, 112b and a layer of thermally conductive material 120 at the bottom of the recess 116a, as shown in FIG. 2A.

接著,請參照第2A及2B圖,其分別繪示依照一實施例之嵌入式封裝結構102的組裝示意圖。嵌入式封裝結構102可藉由組裝至散熱片116之凹槽116a中而組成一光源模組100。此光源模組100之散熱片116上形成有接墊112a、112b、一絕緣層114、一金屬層118以及一導熱材料層120,其可經由第1A~1D圖之加工流程製作,在此不再贅述。嵌入式封裝結構102包括一發光元件110、一導線架130以及一封膠140。導線架130電性連接於發光元件110與接墊112a、112b之間。此外,散熱片116具有一凹槽116a,此凹槽116a用以容納發光元件110與導線架130,其中導熱材料層120位於凹槽116a的底部,以使散熱片116藉由導熱材料層120與導線架130的底部熱接觸。另外,嵌入式封裝結構102更包括至少一導線142,導線142電性連接於發光元件110與導線架130之間,以傳遞訊號。Next, please refer to FIGS. 2A and 2B , which are respectively assembled diagrams of the embedded package structure 102 according to an embodiment. The embedded package structure 102 can be assembled into the light source module 100 by being assembled into the recess 116a of the heat sink 116. The heat sinks 116 of the light source module 100 are formed with pads 112a and 112b, an insulating layer 114, a metal layer 118 and a heat conductive material layer 120, which can be fabricated through the processing flow of FIGS. 1A to 1D. Let me repeat. The embedded package structure 102 includes a light emitting element 110, a lead frame 130, and a glue 140. The lead frame 130 is electrically connected between the light emitting element 110 and the pads 112a, 112b. In addition, the heat sink 116 has a recess 116a for receiving the light emitting element 110 and the lead frame 130, wherein the heat conductive material layer 120 is located at the bottom of the recess 116a, so that the heat sink 116 is separated by the heat conductive material layer 120. The bottom of the lead frame 130 is in thermal contact. In addition, the embedded package structure 102 further includes at least one wire 142 electrically connected between the light emitting element 110 and the lead frame 130 to transmit signals.

在上述實施例中,嵌入式封裝結構102因採用向上彎折之導線架130,使得導線架下端130c及導線架中端130b可內埋於散熱片116的凹槽116a中。導線架上端130a延伸至凹槽116a的外側,並可藉由焊接材料層與接墊112a、112b接合而電性連接。此外,封膠140包覆發光元件110以及部分導線架130,以使導線架下端130c延伸至封膠140內,並位於發光元件110之周圍。在一實施例中,發光元件110係以一對導線142與導線架下端130c電性連接,以使發光元件110電致而發光。In the above embodiment, the embedded package structure 102 adopts the upwardly bent lead frame 130, so that the lead frame lower end 130c and the lead frame middle end 130b can be buried in the groove 116a of the heat sink 116. The lead frame upper end 130a extends to the outside of the recess 116a and is electrically connected by bonding the solder material layer to the pads 112a, 112b. In addition, the encapsulant 140 encloses the light emitting element 110 and a portion of the lead frame 130 such that the lead frame lower end 130c extends into the encapsulant 140 and is located around the light emitting element 110. In one embodiment, the light-emitting element 110 is electrically connected to the lower end 130c of the lead frame by a pair of wires 142 to electrically illuminate the light-emitting element 110.

在上述實施例中,導線架130的底部例如具有一晶片座134,發光元件110配置於晶片座134上,而導線架上端130a由晶片座134之一側呈L形延伸出封膠140之外,並顯露於封膠140之頂面。如第2B圖所示,當嵌入式封裝結構102內埋於凹槽116a內時,位於底部的晶片座134直接與導熱材料層120接觸,導熱材料層120例如為錫膏或其他金屬,因此可將發光元件110所產生的熱直接傳導至散熱片116,不需經過絕緣層114,以減少熱阻的產生。此外,嵌入式封裝結構102的封膠140不會凸出於散熱片116外,而是內埋於凹槽116a內,在組裝時不易觸碰,故能保護內部的導線142不被按壓,以避免發生斷裂或損壞。In the above embodiment, the bottom of the lead frame 130 has, for example, a wafer holder 134, and the light-emitting element 110 is disposed on the wafer holder 134, and the upper end 130a of the lead frame extends from the side of the wafer holder 134 in an L shape beyond the sealant 140. And exposed on the top surface of the sealant 140. As shown in FIG. 2B, when the embedded package structure 102 is buried in the recess 116a, the wafer holder 134 at the bottom is directly in contact with the heat conductive material layer 120, and the heat conductive material layer 120 is, for example, solder paste or other metal. The heat generated by the light-emitting element 110 is directly transmitted to the heat sink 116 without passing through the insulating layer 114 to reduce the generation of thermal resistance. In addition, the encapsulant 140 of the embedded package structure 102 does not protrude from the outside of the heat sink 116, but is embedded in the recess 116a, and is not easy to touch during assembly, so that the inner lead 142 can be protected from being pressed. Avoid breakage or damage.

雖然上述實施例中,封膠140係於組裝前預先包覆發光元件110以及部分導線架130,以形成一嵌入式封裝結構102,再將嵌入式封裝結構102組裝至凹槽116a中,以組成一體化的光源模組100。但在另一實施例中,封膠140亦可於組裝成光源模組100之後再填入於凹槽116a內,並經由固化而包覆發光元件110以及部分導線架130,以形成嵌入式封裝結構102。此外,封膠140可具有透鏡的形狀及功能,例如具有凸面、凹面或其組合,藉以改變由發光元件110發射之光的出光角度。In the above embodiment, the encapsulant 140 is pre-coated with the light-emitting component 110 and a portion of the lead frame 130 before assembly to form an embedded package structure 102, and then the embedded package structure 102 is assembled into the recess 116a to form An integrated light source module 100. In another embodiment, the encapsulant 140 can be filled into the recess 116a after being assembled into the light source module 100, and the light emitting component 110 and the partial lead frame 130 are coated by curing to form an embedded package. Structure 102. In addition, the sealant 140 may have the shape and function of a lens, such as having a convex surface, a concave surface, or a combination thereof, thereby changing the light exit angle of the light emitted by the light emitting element 110.

本發明上述實施例所揭露之提昇散熱效率之光源模組及其嵌入式封裝結構,係採用向上彎折之導線架,使得導線架可內埋於散熱片的凹槽中,並可藉由上錫焊接而電性連接於發光元件與電路層之間。因此,嵌入式封裝結構可受到適當的保護,以減少在組裝時被觸碰到的機會。此外,發光元件內埋之後,光源模組的整體厚度明顯地減少,更能符合薄形化的需求。相對於傳統電路基板的絕緣層熱阻過高的問題,本實施例之發光元件(例如為高功率之發光二極體元件)所產生的熱可直接傳導至下方的導熱材料層以及散熱片,不需經過絕緣層,因此可有效減少熱阻的產生,以提昇光源模組的散熱效率。The light source module and the embedded package structure thereof for improving heat dissipation efficiency disclosed in the above embodiments of the present invention adopt an upwardly bent lead frame, so that the lead frame can be buried in the groove of the heat sink, and can be The solder is soldered and electrically connected between the light emitting element and the circuit layer. Therefore, the embedded package structure can be appropriately protected to reduce the chance of being touched during assembly. In addition, after the light-emitting element is buried, the overall thickness of the light source module is significantly reduced, which is more suitable for thinning. The heat generated by the light-emitting element (for example, a high-power light-emitting diode element) of the present embodiment can be directly transmitted to the underlying heat conductive material layer and the heat sink, insofar as the thermal resistance of the insulating layer of the conventional circuit substrate is too high. It does not need to pass through the insulating layer, so the heat resistance can be effectively reduced to improve the heat dissipation efficiency of the light source module.

綜上所述,雖然本發明已以諸實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。In conclusion, the present invention has been disclosed in the above embodiments, but it is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100...光源模組100. . . Light source module

102...嵌入式封裝結構102. . . Embedded package structure

110...發光元件110. . . Light-emitting element

112...電路層112. . . Circuit layer

112a、112b...接墊112a, 112b. . . Pad

114...絕緣層114. . . Insulation

116...散熱片116. . . heat sink

116a...凹槽116a. . . Groove

118...金屬層118. . . Metal layer

120...導熱材料層120. . . Thermally conductive material layer

122...部分導熱材料層(焊接材料層)122. . . Part of the layer of thermal conductive material (welding material layer)

124...防銲層124. . . Solder mask

130...導線架130. . . Lead frame

130a...導線架上端130a. . . Upper end of lead frame

130b...導線架中端130b. . . Middle end of lead frame

130c...導線架下端130c. . . Lower end of lead frame

134...晶片座134. . . Wafer holder

140...封膠140. . . Plastic closures

142...導線142. . . wire

第1A~1E圖繪示依照一實施例之光源模組的散熱片之加工流程示意圖。1A-1E are schematic diagrams showing a processing flow of a heat sink of a light source module according to an embodiment.

第2A及2B圖分別繪示依照一實施例之嵌入式封裝結構的組裝示意圖。2A and 2B are respectively assembled schematic views of an embedded package structure according to an embodiment.

100...光源模組100. . . Light source module

102...嵌入式封裝結構102. . . Embedded package structure

110...發光元件110. . . Light-emitting element

112a、112b...接墊112a, 112b. . . Pad

114...絕緣層114. . . Insulation

116...散熱片116. . . heat sink

116a...凹槽116a. . . Groove

118...金屬層118. . . Metal layer

120...導熱材料層120. . . Thermally conductive material layer

122...部分導熱材料層(焊接材料層)122. . . Part of the layer of thermal conductive material (welding material layer)

124...防銲層124. . . Solder mask

130...導線架130. . . Lead frame

130a...導線架上端130a. . . Upper end of lead frame

130b...導線架中端130b. . . Middle end of lead frame

130c...導線架下端130c. . . Lower end of lead frame

134...晶片座134. . . Wafer holder

140...封膠140. . . Plastic closures

142...導線142. . . wire

Claims (11)

一種提昇散熱效率之光源模組,該光源模組包括:一散熱片,具有一凹槽;一電路層,配置於該凹槽的外側;一嵌入式封裝結構,配置於該凹槽中,該嵌入式封裝結構包括:一發光元件;一導線架,對應該凹槽之外形設置於該嵌入式封裝結構中且電性連接於該發光元件與該電路層之間,該凹槽用以容納該發光元件與該導線架,該導線架上端延伸至該凹槽的外側,並與該電路層電性連接;一封膠,包覆該發光元件以及部分該導線架,其中該導線架下端延伸至該封膠內,並與該發光元件電性連接;以及一晶片座,位於該導線架的底部,該發光元件配置於該晶片座上;一導熱材料層,位於該凹槽的底部並連接於該晶片座,以使該散熱片藉由該導熱材料層與該晶片座熱接觸。 A light source module for improving heat dissipation efficiency, the light source module includes: a heat sink having a groove; a circuit layer disposed on an outer side of the groove; and an embedded package structure disposed in the groove The embedded package structure includes: a light-emitting component; a lead frame disposed in the embedded package structure corresponding to the recess and electrically connected between the light-emitting component and the circuit layer, the recess is configured to receive the a light-emitting element and the lead frame, the upper end of the lead frame extends to the outside of the groove, and is electrically connected to the circuit layer; a glue covers the light-emitting element and a part of the lead frame, wherein the lower end of the lead frame extends to The sealing material is electrically connected to the light emitting element; and a wafer holder is disposed at the bottom of the lead frame, and the light emitting element is disposed on the wafer holder; a layer of heat conductive material is located at the bottom of the groove and is connected to The wafer holder is such that the heat sink is in thermal contact with the wafer holder by the layer of thermally conductive material. 如申請專利範圍第1項所述之光源模組,更包括一絕緣層,位於該電路層與該散熱片之間,該絕緣層位於該凹槽的外側。 The light source module of claim 1, further comprising an insulating layer between the circuit layer and the heat sink, the insulating layer being located outside the groove. 如申請利範圍第2項所述之光源模組,更包括一防銲層,塗佈於該絕緣層上,並顯露於該凹槽的外側。 The light source module of claim 2, further comprising a solder resist layer coated on the insulating layer and exposed on the outer side of the recess. 如申請專利範圍第2項所述之光源模組,其中該電路層包括至少一接墊,配置於該凹槽的外側,該導線架 上端延伸至該凹槽的外側,並與該接墊電性連接。 The light source module of claim 2, wherein the circuit layer comprises at least one pad disposed on an outer side of the groove, the lead frame The upper end extends to the outside of the groove and is electrically connected to the pad. 如申請專利範圍第1項所述之光源模組,更包括一金屬層,位於該凹槽的底部,且接合於該導熱材料層與該散熱片之間,其中該金屬層與該導熱材料層的接合能力大於該散熱片與該導熱材料層的接合能力。 The light source module of claim 1, further comprising a metal layer at the bottom of the groove and bonded between the heat conductive material layer and the heat sink, wherein the metal layer and the heat conductive material layer The bonding ability is greater than the bonding ability of the heat sink to the heat conductive material layer. 如申請專利範圍第5項所述之光源模組,其中該金屬層的材質為銅,該散熱片的材質為鋁。 The light source module of claim 5, wherein the metal layer is made of copper, and the heat sink is made of aluminum. 如申請專利範圍第1項所述之光源模組,其中該導熱材料層以塗佈的方式形成於該凹槽的底部。 The light source module of claim 1, wherein the layer of thermally conductive material is formed on the bottom of the groove in a coating manner. 如申請專利範圍第7項所述之光源模組,其中該導熱材料層的材質包括錫。 The light source module of claim 7, wherein the material of the heat conductive material layer comprises tin. 一種嵌入式封裝結構,配置於一凹槽中,該凹槽的外側設有一接墊,該嵌入式封裝結構包括:一發光元件;一導線架,對應該凹槽之外形設置於該嵌入式封裝結構中且電性連接於該發光元件,該凹槽用以容納該發光元件與該導線架,該導線架上端延伸至該凹槽的外側,並與該接墊電性連接;一封膠,包覆該發光元件以及部分該導線架,其中該導線架下端延伸至該封膠內,並與該發光元件電性連接;以及一晶片座,位於該導線架的底部,該發光元件配置於該晶片座上。 An embedded package structure is disposed in a recess, and a pad is disposed on an outer side of the recess, the embedded package structure includes: a light emitting component; and a lead frame disposed in the embedded package corresponding to the recess The structure is electrically connected to the light-emitting component, the recess is configured to receive the light-emitting component and the lead frame, and the upper end of the lead frame extends to the outside of the groove and is electrically connected to the pad; Encapsulating the light-emitting element and a portion of the lead frame, wherein a lower end of the lead frame extends into the sealant and is electrically connected to the light-emitting element; and a wafer holder is located at a bottom of the lead frame, and the light-emitting element is disposed on the light-emitting element On the wafer holder. 如申請專利範圍第9項所述之嵌入式封裝結構,其中該導線架上端由該晶片座之一側呈L形延伸出該 封膠之外。 The embedded package structure of claim 9, wherein the upper end of the lead frame extends from the side of the wafer holder in an L shape. Outside the sealant. 如申請專利範圍第9項所述之嵌入式封裝結構,更包括至少一導線,該發光元件以該導線與該導線架下端電性連接。The embedded package structure of claim 9, further comprising at least one wire, the light-emitting element being electrically connected to the lower end of the lead frame by the wire.
TW100109023A 2011-03-16 2011-03-16 Light source module with enhanced heat dissipation efficiency and embedded package structure thereof TWI464929B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW100109023A TWI464929B (en) 2011-03-16 2011-03-16 Light source module with enhanced heat dissipation efficiency and embedded package structure thereof
CN2011101027934A CN102683545A (en) 2011-03-16 2011-04-25 Light source module for improving heat dissipation efficiency and embedded packaging structure thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100109023A TWI464929B (en) 2011-03-16 2011-03-16 Light source module with enhanced heat dissipation efficiency and embedded package structure thereof

Publications (2)

Publication Number Publication Date
TW201240168A TW201240168A (en) 2012-10-01
TWI464929B true TWI464929B (en) 2014-12-11

Family

ID=46815181

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100109023A TWI464929B (en) 2011-03-16 2011-03-16 Light source module with enhanced heat dissipation efficiency and embedded package structure thereof

Country Status (2)

Country Link
CN (1) CN102683545A (en)
TW (1) TWI464929B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI720921B (en) * 2020-07-14 2021-03-01 欣興電子股份有限公司 Embedded component structure and manufacturing method thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI538574B (en) 2014-06-23 2016-06-11 綠點高新科技股份有限公司 Electronic foundation with heat dissipation and method for making the same
TWI551818B (en) * 2015-01-22 2016-10-01 綠點高新科技股份有限公司 A method of manufacturing a heat dissipation module of an electronic component and the heat dissipation module of an electronic component
CN104966774B (en) * 2015-07-07 2019-06-11 宏齐光电子(深圳)有限公司 A kind of reverse buckling type small size high-power LED encapsulation structure
KR20190065748A (en) * 2017-12-04 2019-06-12 삼성전기주식회사 Printed circuit board
CN112366269A (en) * 2020-12-11 2021-02-12 江西众能光电科技有限公司 High heat abstractor of LED

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200515514A (en) * 2003-10-22 2005-05-01 Siliconware Precision Industries Co Ltd Method of fabricating under bump metallurgy structure and semiconductor wafer with solder bumps
CN1875493A (en) * 2003-11-07 2006-12-06 特里多尼克光电子有限公司 Light-emitting diode arrangement comprising a heat-dissipating plate
CN101048880A (en) * 2004-10-25 2007-10-03 克里公司 Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
TW200908180A (en) * 2007-07-17 2009-02-16 Shinko Electric Ind Co Solder bump forming method
CN101389202A (en) * 2007-09-12 2009-03-18 鑫电光科技股份有限公司 Cooling device for electronic element

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2692845Y (en) * 2004-04-02 2005-04-13 相互股份有限公司 High-heat radiating LED
US8378372B2 (en) * 2008-03-25 2013-02-19 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and horizontal signal routing
CN201215259Y (en) * 2008-05-30 2009-04-01 和谐光电科技(泉州)有限公司 High-power LED and illuminating device using the high-power LED

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200515514A (en) * 2003-10-22 2005-05-01 Siliconware Precision Industries Co Ltd Method of fabricating under bump metallurgy structure and semiconductor wafer with solder bumps
CN1875493A (en) * 2003-11-07 2006-12-06 特里多尼克光电子有限公司 Light-emitting diode arrangement comprising a heat-dissipating plate
CN101048880A (en) * 2004-10-25 2007-10-03 克里公司 Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
TW200908180A (en) * 2007-07-17 2009-02-16 Shinko Electric Ind Co Solder bump forming method
CN101389202A (en) * 2007-09-12 2009-03-18 鑫电光科技股份有限公司 Cooling device for electronic element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI720921B (en) * 2020-07-14 2021-03-01 欣興電子股份有限公司 Embedded component structure and manufacturing method thereof

Also Published As

Publication number Publication date
TW201240168A (en) 2012-10-01
CN102683545A (en) 2012-09-19

Similar Documents

Publication Publication Date Title
TWI692122B (en) Light emitting diode package structure and manufacturing method thereof
TWI520386B (en) Structure of led assembly and manufacturing method thereof
TWI393275B (en) Light emitting diode package and fabrication method thereof
JP3138726U (en) Light emitting diode (LED) package structure using aluminum substrate and light emitting diode lamp having this package structure
TWI464929B (en) Light source module with enhanced heat dissipation efficiency and embedded package structure thereof
TWI645580B (en) Light emitting diode crystal grain and display using the same
TWI505519B (en) Light-emitting diode light bar and the method for manufacturing the same
US20130307014A1 (en) Semiconductor light emitting device
US8624388B2 (en) Package carrier and manufacturing method thereof
WO2010050067A1 (en) Substrate for light emitting element package, and light emitting element package
TW201327948A (en) Light emitting diode packaging and method of making
US9537019B2 (en) Semiconductor device
TWI487150B (en) Led package and method for manufacturing the same
JP2007049045A (en) Semiconductor light emitting device and semiconductor device using the same
KR20130051206A (en) Light emitting module
TWI722533B (en) Heat dissipation substrate and manufacturing method thereof
JP2015185685A (en) Light emitting device manufacturing method and light device
TWI593141B (en) Method for fabricating package structure
TW201532316A (en) Package structure and manufacturing method thereof
JP2012104542A (en) Lead frame for led light-emitting element, led package using the same and manufacturing method therefor
US10199550B2 (en) Light-emitting device
TWI423405B (en) Package structure with carrier
TW201533930A (en) Carrier structure and package structure of light emitting diode
JP6679799B2 (en) Light emitting device
JP6543391B2 (en) Semiconductor device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees